Patent
US 11,552,198Transistors Comprising At Least One Of GaP, GaN, and GaAs
Durai Vishak Nirmal Ramaswamy
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,552,198Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-23. Canceled
Canceled
: A transistor comprising: a pair of source/drain regions having a channel region there-between; a transistor gate construction operatively proximate the channel region; the channel region comprising a direction of current flow there-through between the pair of source/drain regions, the channel region in the current-flow direction comprising a pair of outer regions havin g, in the current-flow direction, an intervening region there-between, each of the outer regions comprising at least one of GaP, GaN, and GaAs extending completely through the channel region orthogonal to the current- flow direction, the intervening region comprising elemental silicon extending completely through the channel region orthogonal to the current-flow direction; and each of the source/drain regions comprising at least one of GaP, GaN, and GaAs directly against the at least one of the GaP, the GaN, and the GaAs of one of the outer regions of the channel region, each of the source/drain regions comprising elemental silicon outward in the current-flow direction of the at least one of the Ga P, the GaN, and the GaAs of the respective source/drain region. Currently amended
: The transistor of claim 24 wherein the elemental silicon of each of the respective source/drain regions is directly against the at least one of the Ga P, the GaN, and the GaAs of the respective source/drain region. Original
: A transistor comprising: a pair of source/drain regions having a channel region there-between, the channel region comprising a direction of current flow there-through between the pair of source/drain regions, the channel region having opposing side regions in vertical cross-section extending all along the current-flow direction, the opposing side regions each comprising at least one of GaP, GaN, and GaAs extending all along the current-flow direction; a transistor gate construction operatively proximate each of the opposing side regions; and an insulator intervening region extending all along the current-flow direction between the opposing side regions in the vertical cross-section. Original
: The transistor of claim 26 wherein the opposing side regions have maximum thickness of no greater than 150 Angstroms. Original
: The transistor of claim 26 wherein the insulator intervening region comprises SiO2. Original
: The transistor of claim 26 wherein the opposing side regions in one of vertical cross-section or horizontal cross-section are in the form of an annulus. Original
: The transistor of claim 26 wherein, each of the source/drain regions comprises at least one of elemental silicon and metal material extending completely through the respective source/drain region orthogonal to the current-flow direction; the insulator intervening region extends beyond opposing outermost edges of conductive material of the transistor gate construction in the current-flow direction; and each of the source/drain regions comprising a pair of extending portions that are each elongated in the current-flow direction, the insulator intervening region that extends beyond the opposing outermost edges of the conductive gate material of the transistor gate construction in the current-flow direction being between the pair of extending portions in the vertical cross-section. Original
Claims 32-41. Canceled
Canceled
: An elevationally-extending transistor comprising: an upper source/drain region, a lower source/drain region, and a channel region extending elevationally there-between, the channel region comprising a top and a bottom each comprising at least one of GaP, GaN, and GaAs, the channel re g ion as respects Ga P. GaN, and GaAs comprisin g only one of the Ga P, the GaN, and the GaAs; a transistor gate construction operatively laterally proximate the channel region; the upper source/drain region comprising: a lowermost portion comprising a top and a bottom each comprising at least one of GaP, GaN, and GaAs, the bottom of the lowermost portion of the upper source/drain region being directly against the at least one of the GaP, the GaN, and the GaAs of the top of the channel region, as respects Ga P. GaN, and GaAs, each of the source/drain re g ions comprisin g only one other of the Ga P. the GaN, and the GaAs; and an uppermost portion comprising a bottom comprising at least one of elemental silicon and metal material directly against the at least one of the GaP, the GaN, and the GaAs of the top of the lowermost portion of the upper source/drain region; and the lower source/drain region comprising: an uppermost portion comprising a top and a bottom each comprising at least one of GaP, GaN, and GaAs, the top of the uppermost portion of the lower source/drain region being directly against the at least one of the GaP, the GaN, and the GaAs of the bottom of the channel region, as respects Ga P. GaN, and GaAs, each of the source/drain re g ions comprisin g only one other of the GaP, the GaN, and the GaAs; and a lowermost portion comprising a top comprising at least one of elemental silicon and metal material directly against the at least one of the GaP, the GaN, and the GaAs of the bottom of the uppermost portion of the lower source/drain region. Currently amended
: The transistor of claim 42 wherein, as respects GaP, GaN, and GaAs, the only one other in the lowermost portion of the upper source/drain region and the only one other in the uppermost portion of the lower source/drain region are the same. New
: The transistor of claim 42 wherein, as respects GaP, GaN, and GaAs, the only one other in the lowermost portion of the upper source/drain region and the only one other in the uppermost portion of the lower source/drain region are different. New
: The transistor of claim 42 wherein the gate construction completely encircles the channel region in all straight-line vertical cross-sections. New
: The transistor of claim 42 wherein the gate construction is over only one lateral side of the channel region in straight-line vertical cross-section. New
: The transistor of claim 42 wherein the channel region comprises GaP. New
: The transistor of claim 42 wherein the channel region comprises GaN. New
: The transistor of claim 42 wherein the channel region comprises GaAs. New
Layer stacks claimed or described, ordered top of device to substrate.
transistor with GaP/GaN/GaAs outer channel regions and elemental silicon intervening channel region
transistor with GaP/GaN/GaAs opposing side channel regions and insulator intervening region
Materials described outside the worked examples.
GaP
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 150 Å | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,552,198Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-23. Canceled
Canceled
: A transistor comprising: a pair of source/drain regions having a channel region there-between; a transistor gate construction operatively proximate the channel region; the channel region comprising a direction of current flow there-through between the pair of source/drain regions, the channel region in the current-flow direction comprising a pair of outer regions havin g, in the current-flow direction, an intervening region there-between, each of the outer regions comprising at least one of GaP, GaN, and GaAs extending completely through the channel region orthogonal to the current- flow direction, the intervening region comprising elemental silicon extending completely through the channel region orthogonal to the current-flow direction; and each of the source/drain regions comprising at least one of GaP, GaN, and GaAs directly against the at least one of the GaP, the GaN, and the GaAs of one of the outer regions of the channel region, each of the source/drain regions comprising elemental silicon outward in the current-flow direction of the at least one of the Ga P, the GaN, and the GaAs of the respective source/drain region. Currently amended
: The transistor of claim 24 wherein the elemental silicon of each of the respective source/drain regions is directly against the at least one of the Ga P, the GaN, and the GaAs of the respective source/drain region. Original
: A transistor comprising: a pair of source/drain regions having a channel region there-between, the channel region comprising a direction of current flow there-through between the pair of source/drain regions, the channel region having opposing side regions in vertical cross-section extending all along the current-flow direction, the opposing side regions each comprising at least one of GaP, GaN, and GaAs extending all along the current-flow direction; a transistor gate construction operatively proximate each of the opposing side regions; and an insulator intervening region extending all along the current-flow direction between the opposing side regions in the vertical cross-section. Original
: The transistor of claim 26 wherein the opposing side regions have maximum thickness of no greater than 150 Angstroms. Original
: The transistor of claim 26 wherein the insulator intervening region comprises SiO2. Original
: The transistor of claim 26 wherein the opposing side regions in one of vertical cross-section or horizontal cross-section are in the form of an annulus. Original
: The transistor of claim 26 wherein, each of the source/drain regions comprises at least one of elemental silicon and metal material extending completely through the respective source/drain region orthogonal to the current-flow direction; the insulator intervening region extends beyond opposing outermost edges of conductive material of the transistor gate construction in the current-flow direction; and each of the source/drain regions comprising a pair of extending portions that are each elongated in the current-flow direction, the insulator intervening region that extends beyond the opposing outermost edges of the conductive gate material of the transistor gate construction in the current-flow direction being between the pair of extending portions in the vertical cross-section. Original
Claims 32-41. Canceled
Canceled
: An elevationally-extending transistor comprising: an upper source/drain region, a lower source/drain region, and a channel region extending elevationally there-between, the channel region comprising a top and a bottom each comprising at least one of GaP, GaN, and GaAs, the channel re g ion as respects Ga P. GaN, and GaAs comprisin g only one of the Ga P, the GaN, and the GaAs; a transistor gate construction operatively laterally proximate the channel region; the upper source/drain region comprising: a lowermost portion comprising a top and a bottom each comprising at least one of GaP, GaN, and GaAs, the bottom of the lowermost portion of the upper source/drain region being directly against the at least one of the GaP, the GaN, and the GaAs of the top of the channel region, as respects Ga P. GaN, and GaAs, each of the source/drain re g ions comprisin g only one other of the Ga P. the GaN, and the GaAs; and an uppermost portion comprising a bottom comprising at least one of elemental silicon and metal material directly against the at least one of the GaP, the GaN, and the GaAs of the top of the lowermost portion of the upper source/drain region; and the lower source/drain region comprising: an uppermost portion comprising a top and a bottom each comprising at least one of GaP, GaN, and GaAs, the top of the uppermost portion of the lower source/drain region being directly against the at least one of the GaP, the GaN, and the GaAs of the bottom of the channel region, as respects Ga P. GaN, and GaAs, each of the source/drain re g ions comprisin g only one other of the GaP, the GaN, and the GaAs; and a lowermost portion comprising a top comprising at least one of elemental silicon and metal material directly against the at least one of the GaP, the GaN, and the GaAs of the bottom of the uppermost portion of the lower source/drain region. Currently amended
: The transistor of claim 42 wherein, as respects GaP, GaN, and GaAs, the only one other in the lowermost portion of the upper source/drain region and the only one other in the uppermost portion of the lower source/drain region are the same. New
: The transistor of claim 42 wherein, as respects GaP, GaN, and GaAs, the only one other in the lowermost portion of the upper source/drain region and the only one other in the uppermost portion of the lower source/drain region are different. New
: The transistor of claim 42 wherein the gate construction completely encircles the channel region in all straight-line vertical cross-sections. New
: The transistor of claim 42 wherein the gate construction is over only one lateral side of the channel region in straight-line vertical cross-section. New
: The transistor of claim 42 wherein the channel region comprises GaP. New
: The transistor of claim 42 wherein the channel region comprises GaN. New
: The transistor of claim 42 wherein the channel region comprises GaAs. New
Layer stacks claimed or described, ordered top of device to substrate.
transistor with GaP/GaN/GaAs outer channel regions and elemental silicon intervening channel region
transistor with GaP/GaN/GaAs opposing side channel regions and insulator intervening region
Materials described outside the worked examples.
GaP
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 150 Å | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,552,198Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-23. Canceled
Canceled
: A transistor comprising: a pair of source/drain regions having a channel region there-between; a transistor gate construction operatively proximate the channel region; the channel region comprising a direction of current flow there-through between the pair of source/drain regions, the channel region in the current-flow direction comprising a pair of outer regions havin g, in the current-flow direction, an intervening region there-between, each of the outer regions comprising at least one of GaP, GaN, and GaAs extending completely through the channel region orthogonal to the current- flow direction, the intervening region comprising elemental silicon extending completely through the channel region orthogonal to the current-flow direction; and each of the source/drain regions comprising at least one of GaP, GaN, and GaAs directly against the at least one of the GaP, the GaN, and the GaAs of one of the outer regions of the channel region, each of the source/drain regions comprising elemental silicon outward in the current-flow direction of the at least one of the Ga P, the GaN, and the GaAs of the respective source/drain region. Currently amended
: The transistor of claim 24 wherein the elemental silicon of each of the respective source/drain regions is directly against the at least one of the Ga P, the GaN, and the GaAs of the respective source/drain region. Original
: A transistor comprising: a pair of source/drain regions having a channel region there-between, the channel region comprising a direction of current flow there-through between the pair of source/drain regions, the channel region having opposing side regions in vertical cross-section extending all along the current-flow direction, the opposing side regions each comprising at least one of GaP, GaN, and GaAs extending all along the current-flow direction; a transistor gate construction operatively proximate each of the opposing side regions; and an insulator intervening region extending all along the current-flow direction between the opposing side regions in the vertical cross-section. Original
: The transistor of claim 26 wherein the opposing side regions have maximum thickness of no greater than 150 Angstroms. Original
: The transistor of claim 26 wherein the insulator intervening region comprises SiO2. Original
: The transistor of claim 26 wherein the opposing side regions in one of vertical cross-section or horizontal cross-section are in the form of an annulus. Original
: The transistor of claim 26 wherein, each of the source/drain regions comprises at least one of elemental silicon and metal material extending completely through the respective source/drain region orthogonal to the current-flow direction; the insulator intervening region extends beyond opposing outermost edges of conductive material of the transistor gate construction in the current-flow direction; and each of the source/drain regions comprising a pair of extending portions that are each elongated in the current-flow direction, the insulator intervening region that extends beyond the opposing outermost edges of the conductive gate material of the transistor gate construction in the current-flow direction being between the pair of extending portions in the vertical cross-section. Original
Claims 32-41. Canceled
Canceled
: An elevationally-extending transistor comprising: an upper source/drain region, a lower source/drain region, and a channel region extending elevationally there-between, the channel region comprising a top and a bottom each comprising at least one of GaP, GaN, and GaAs, the channel re g ion as respects Ga P. GaN, and GaAs comprisin g only one of the Ga P, the GaN, and the GaAs; a transistor gate construction operatively laterally proximate the channel region; the upper source/drain region comprising: a lowermost portion comprising a top and a bottom each comprising at least one of GaP, GaN, and GaAs, the bottom of the lowermost portion of the upper source/drain region being directly against the at least one of the GaP, the GaN, and the GaAs of the top of the channel region, as respects Ga P. GaN, and GaAs, each of the source/drain re g ions comprisin g only one other of the Ga P. the GaN, and the GaAs; and an uppermost portion comprising a bottom comprising at least one of elemental silicon and metal material directly against the at least one of the GaP, the GaN, and the GaAs of the top of the lowermost portion of the upper source/drain region; and the lower source/drain region comprising: an uppermost portion comprising a top and a bottom each comprising at least one of GaP, GaN, and GaAs, the top of the uppermost portion of the lower source/drain region being directly against the at least one of the GaP, the GaN, and the GaAs of the bottom of the channel region, as respects Ga P. GaN, and GaAs, each of the source/drain re g ions comprisin g only one other of the GaP, the GaN, and the GaAs; and a lowermost portion comprising a top comprising at least one of elemental silicon and metal material directly against the at least one of the GaP, the GaN, and the GaAs of the bottom of the uppermost portion of the lower source/drain region. Currently amended
: The transistor of claim 42 wherein, as respects GaP, GaN, and GaAs, the only one other in the lowermost portion of the upper source/drain region and the only one other in the uppermost portion of the lower source/drain region are the same. New
: The transistor of claim 42 wherein, as respects GaP, GaN, and GaAs, the only one other in the lowermost portion of the upper source/drain region and the only one other in the uppermost portion of the lower source/drain region are different. New
: The transistor of claim 42 wherein the gate construction completely encircles the channel region in all straight-line vertical cross-sections. New
: The transistor of claim 42 wherein the gate construction is over only one lateral side of the channel region in straight-line vertical cross-section. New
: The transistor of claim 42 wherein the channel region comprises GaP. New
: The transistor of claim 42 wherein the channel region comprises GaN. New
: The transistor of claim 42 wherein the channel region comprises GaAs. New
Layer stacks claimed or described, ordered top of device to substrate.
transistor with GaP/GaN/GaAs outer channel regions and elemental silicon intervening channel region
transistor with GaP/GaN/GaAs opposing side channel regions and insulator intervening region
Materials described outside the worked examples.
GaP
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 150 Å | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,552,198Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-23. Canceled
Canceled
: A transistor comprising: a pair of source/drain regions having a channel region there-between; a transistor gate construction operatively proximate the channel region; the channel region comprising a direction of current flow there-through between the pair of source/drain regions, the channel region in the current-flow direction comprising a pair of outer regions havin g, in the current-flow direction, an intervening region there-between, each of the outer regions comprising at least one of GaP, GaN, and GaAs extending completely through the channel region orthogonal to the current- flow direction, the intervening region comprising elemental silicon extending completely through the channel region orthogonal to the current-flow direction; and each of the source/drain regions comprising at least one of GaP, GaN, and GaAs directly against the at least one of the GaP, the GaN, and the GaAs of one of the outer regions of the channel region, each of the source/drain regions comprising elemental silicon outward in the current-flow direction of the at least one of the Ga P, the GaN, and the GaAs of the respective source/drain region. Currently amended
: The transistor of claim 24 wherein the elemental silicon of each of the respective source/drain regions is directly against the at least one of the Ga P, the GaN, and the GaAs of the respective source/drain region. Original
: A transistor comprising: a pair of source/drain regions having a channel region there-between, the channel region comprising a direction of current flow there-through between the pair of source/drain regions, the channel region having opposing side regions in vertical cross-section extending all along the current-flow direction, the opposing side regions each comprising at least one of GaP, GaN, and GaAs extending all along the current-flow direction; a transistor gate construction operatively proximate each of the opposing side regions; and an insulator intervening region extending all along the current-flow direction between the opposing side regions in the vertical cross-section. Original
: The transistor of claim 26 wherein the opposing side regions have maximum thickness of no greater than 150 Angstroms. Original
: The transistor of claim 26 wherein the insulator intervening region comprises SiO2. Original
: The transistor of claim 26 wherein the opposing side regions in one of vertical cross-section or horizontal cross-section are in the form of an annulus. Original
: The transistor of claim 26 wherein, each of the source/drain regions comprises at least one of elemental silicon and metal material extending completely through the respective source/drain region orthogonal to the current-flow direction; the insulator intervening region extends beyond opposing outermost edges of conductive material of the transistor gate construction in the current-flow direction; and each of the source/drain regions comprising a pair of extending portions that are each elongated in the current-flow direction, the insulator intervening region that extends beyond the opposing outermost edges of the conductive gate material of the transistor gate construction in the current-flow direction being between the pair of extending portions in the vertical cross-section. Original
Claims 32-41. Canceled
Canceled
: An elevationally-extending transistor comprising: an upper source/drain region, a lower source/drain region, and a channel region extending elevationally there-between, the channel region comprising a top and a bottom each comprising at least one of GaP, GaN, and GaAs, the channel re g ion as respects Ga P. GaN, and GaAs comprisin g only one of the Ga P, the GaN, and the GaAs; a transistor gate construction operatively laterally proximate the channel region; the upper source/drain region comprising: a lowermost portion comprising a top and a bottom each comprising at least one of GaP, GaN, and GaAs, the bottom of the lowermost portion of the upper source/drain region being directly against the at least one of the GaP, the GaN, and the GaAs of the top of the channel region, as respects Ga P. GaN, and GaAs, each of the source/drain re g ions comprisin g only one other of the Ga P. the GaN, and the GaAs; and an uppermost portion comprising a bottom comprising at least one of elemental silicon and metal material directly against the at least one of the GaP, the GaN, and the GaAs of the top of the lowermost portion of the upper source/drain region; and the lower source/drain region comprising: an uppermost portion comprising a top and a bottom each comprising at least one of GaP, GaN, and GaAs, the top of the uppermost portion of the lower source/drain region being directly against the at least one of the GaP, the GaN, and the GaAs of the bottom of the channel region, as respects Ga P. GaN, and GaAs, each of the source/drain re g ions comprisin g only one other of the GaP, the GaN, and the GaAs; and a lowermost portion comprising a top comprising at least one of elemental silicon and metal material directly against the at least one of the GaP, the GaN, and the GaAs of the bottom of the uppermost portion of the lower source/drain region. Currently amended
: The transistor of claim 42 wherein, as respects GaP, GaN, and GaAs, the only one other in the lowermost portion of the upper source/drain region and the only one other in the uppermost portion of the lower source/drain region are the same. New
: The transistor of claim 42 wherein, as respects GaP, GaN, and GaAs, the only one other in the lowermost portion of the upper source/drain region and the only one other in the uppermost portion of the lower source/drain region are different. New
: The transistor of claim 42 wherein the gate construction completely encircles the channel region in all straight-line vertical cross-sections. New
: The transistor of claim 42 wherein the gate construction is over only one lateral side of the channel region in straight-line vertical cross-section. New
: The transistor of claim 42 wherein the channel region comprises GaP. New
: The transistor of claim 42 wherein the channel region comprises GaN. New
: The transistor of claim 42 wherein the channel region comprises GaAs. New
Layer stacks claimed or described, ordered top of device to substrate.
transistor with GaP/GaN/GaAs outer channel regions and elemental silicon intervening channel region
transistor with GaP/GaN/GaAs opposing side channel regions and insulator intervening region
Materials described outside the worked examples.
GaP
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≥ 150 Å | — |
Related documents with shared materials, methods, properties, or citations.
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