Patent
US 8,598,568PHOTODETECTOR USING A GRAPHENE THIN FILM AND NANOPARTICLES, AND METHOD FOR PRODUCING SAME
Tae-Whan Kim
US
Copyright © 2026 Matter42. All rights reserved.
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, thereby completing fabrication of a UV PD. 20 4. Current-voltage (I -V) characteristics of a PD fabricated according to the embodiment of the present …
FIGS. 2 and 3, which functioned as an electrode to be connected to an external circuit. 4) The external circuit was connected as shown in
FIG. 4. The method of fabricating the PD 100 shown in
FIG. 5). The graphene thin film 20 is easily adhered onto 1 5 the device substrate 10 due to van der Waals force, and no additional adhesive material or process …
FIG. 6). Thus, graphene is 15 educed on the metal graphite layer 220 from the carbon component solidly dissolved in the graphite metal layer 220 and a graphene …
FIGS. 7 through 9 are schematic diagrams co rr esponding to the flowchart of
FIG. 8 (refer to step S 1 of
FIG. 9. The cooling process is an important step for uniformly educing the graphene to obtain a high- quality graphene thin film 260. A rapid cooling process …
FIG. 10. Referring to FI G. 11, when UV light is incident (- A -), a large current of several mA or more is supplied to a device. The obtained current of …
FIG. 11 20 using the PET substrate. However, when the PET substrate is used, the device may be bent, unlike when the glass substrate is used, thereby enabling …
FIG. 12. Since 10 carbon atoms are stacked as a single layer or a double or triple layer and the graphene thin film 20 has a very small thickness, a channel 35 …
FIG. 13, the UV light is absorbed by the ZnO nanoparticles. The absorbed UV light form electron-hole pairs in the ZnO nanoparticles 40. Among the electron-hole …
FIG. 25 6. To begin with, a substrate 210 on which a graphite metal layer 220 is formed is prepared as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
[CLAIMS] [Claim 1] A photodetector (PD) comprising: 5 a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source; and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material.
[Claim 2] The PD of claim 1, wherein the nanoparticles are one selected from the group consisting of zin c oxide (ZnO), copper oxide (C uO), barium carbonate (BaCO₃), bismuth oxide (B i2O₃), boron oxide (B 203), calcium carbonate (CaCO₃), cerium oxide (CeO₂), chromium oxide (Cr₂ 03), iron oxide (Fe₂ 03), gallium oxide (Ga₂ O₃), 15 indium oxide (In₂O 3), lithium carbonate (Li₂CO₃), lithium cobalt oxide (LiC oO 2), magnesium oxide (MgO), manganese carbonate (MnCO₃), manganese oxide (MnO₂), manganese tetroxide (Mn₃ O₄), niobium oxide (Nb₂ O 5), lead oxide (PbO), antimony oxide (Sb₂ O₃), tin oxide (SnO₂), strontium carbonate (SrCO₃), tantalum oxide (Ta₂ O 5), titanium oxide (TiO₂), barium titanate (BaTiO₃), vanadium oxide (V₂₀₅), 20 tungsten oxide (W O 3), zirconium oxide (ZrO₂), gallium nitride (GaN), aluminum gallium nitride (A lxGapx N), silicon carbide (SiC), and zin c sulfide (ZnS).
[Claim 5] The method of claim 3, wherein the forming of the nanoparticle layer comprises: preparing a solution in which nanoparticles are dispersed; forming a mask covering the electrode region of the graphene thin film on the 20 graphene thin film; spin-coating the solution, in which the nanoparticles are dispersed, on the graphene thin film on which the mask is formed and drying the solution to form the nanoparticle layer formed of the nanoparticles without the matrix material; and removing the mask.
[Claim 6] 30 The method of any one of claims 4 and 5, wherein the preparing of the solution in which the nanoparticles are dispersed comprises: dissolving a metal acetate dihydrate in N,N-dimethyl formamide (DMF) to form a mixture solution; and 5 heating the mixture solution and gradually dropping a heating temperature to form the nanoparticles.
[Claim 9] The method of claim 8, wherein the vapor-phase carbon source contains CH₄ gas.
Layer stacks claimed or described, ordered top of device to substrate.
photodetector (PD)
Materials described outside the worked examples.
graphene thin film
C
nanoparticles (generic, without matrix material)
zinc oxide
ZnO
copper oxide
CuO
barium carbonate
BaCO₃
bismuth oxide
Bi₂O₃
boron oxide
B₂O₃
calcium carbonate
CaCO₃
cerium oxide
CeO₂
chromium oxide
Cr₂O₃
iron oxide
Fe₂O₃
gallium oxide
Ga₂O₃
indium oxide
In₂O₃
lithium carbonate
Li₂CO₃
lithium cobalt oxide
LiCoO₂
magnesium oxide
MgO
manganese carbonate
MnCO₃
manganese oxide
MnO₂
manganese tetroxide
Mn₃O₄
niobium oxide
Nb₂O₅
lead oxide
PbO
antimony oxide
Sb₂O₃
tin oxide
SnO₂
strontium carbonate
SrCO₃
tantalum oxide
Ta₂O₅
titanium oxide
TiO₂
barium titanate
BaTiO₃
vanadium oxide
V₂O₅
tungsten oxide
WO₃
zirconium oxide
ZrO₂
gallium nitride
GaN
aluminum gallium nitride
AlxGa₁-xN
silicon carbide
SiC
zinc sulfide
ZnS
metal acetate dihydrate
N,N-dimethylformamide
DMF
methane
CH₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9. The cooling process is an important step for uniformly educing the graphene to obtain a high- quality graphene thin film 260. A rapid cooling process …
FIG. 12. Since 10 carbon atoms are stacked as a single layer or a double or triple layer and the graphene thin film 20 has a very small thickness, a channel 35 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Operating Voltage | 3 V | C |
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ELECTRON EMITTING DEVICE USING GRAPHENE AND METHOD FOR MANUFACTURING SAME
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, thereby completing fabrication of a UV PD. 20 4. Current-voltage (I -V) characteristics of a PD fabricated according to the embodiment of the present …
FIGS. 2 and 3, which functioned as an electrode to be connected to an external circuit. 4) The external circuit was connected as shown in
FIG. 4. The method of fabricating the PD 100 shown in
FIG. 5). The graphene thin film 20 is easily adhered onto 1 5 the device substrate 10 due to van der Waals force, and no additional adhesive material or process …
FIG. 6). Thus, graphene is 15 educed on the metal graphite layer 220 from the carbon component solidly dissolved in the graphite metal layer 220 and a graphene …
FIGS. 7 through 9 are schematic diagrams co rr esponding to the flowchart of
FIG. 8 (refer to step S 1 of
FIG. 9. The cooling process is an important step for uniformly educing the graphene to obtain a high- quality graphene thin film 260. A rapid cooling process …
FIG. 10. Referring to FI G. 11, when UV light is incident (- A -), a large current of several mA or more is supplied to a device. The obtained current of …
FIG. 11 20 using the PET substrate. However, when the PET substrate is used, the device may be bent, unlike when the glass substrate is used, thereby enabling …
FIG. 12. Since 10 carbon atoms are stacked as a single layer or a double or triple layer and the graphene thin film 20 has a very small thickness, a channel 35 …
FIG. 13, the UV light is absorbed by the ZnO nanoparticles. The absorbed UV light form electron-hole pairs in the ZnO nanoparticles 40. Among the electron-hole …
FIG. 25 6. To begin with, a substrate 210 on which a graphite metal layer 220 is formed is prepared as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
[CLAIMS] [Claim 1] A photodetector (PD) comprising: 5 a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source; and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material.
[Claim 2] The PD of claim 1, wherein the nanoparticles are one selected from the group consisting of zin c oxide (ZnO), copper oxide (C uO), barium carbonate (BaCO₃), bismuth oxide (B i2O₃), boron oxide (B 203), calcium carbonate (CaCO₃), cerium oxide (CeO₂), chromium oxide (Cr₂ 03), iron oxide (Fe₂ 03), gallium oxide (Ga₂ O₃), 15 indium oxide (In₂O 3), lithium carbonate (Li₂CO₃), lithium cobalt oxide (LiC oO 2), magnesium oxide (MgO), manganese carbonate (MnCO₃), manganese oxide (MnO₂), manganese tetroxide (Mn₃ O₄), niobium oxide (Nb₂ O 5), lead oxide (PbO), antimony oxide (Sb₂ O₃), tin oxide (SnO₂), strontium carbonate (SrCO₃), tantalum oxide (Ta₂ O 5), titanium oxide (TiO₂), barium titanate (BaTiO₃), vanadium oxide (V₂₀₅), 20 tungsten oxide (W O 3), zirconium oxide (ZrO₂), gallium nitride (GaN), aluminum gallium nitride (A lxGapx N), silicon carbide (SiC), and zin c sulfide (ZnS).
[Claim 5] The method of claim 3, wherein the forming of the nanoparticle layer comprises: preparing a solution in which nanoparticles are dispersed; forming a mask covering the electrode region of the graphene thin film on the 20 graphene thin film; spin-coating the solution, in which the nanoparticles are dispersed, on the graphene thin film on which the mask is formed and drying the solution to form the nanoparticle layer formed of the nanoparticles without the matrix material; and removing the mask.
[Claim 6] 30 The method of any one of claims 4 and 5, wherein the preparing of the solution in which the nanoparticles are dispersed comprises: dissolving a metal acetate dihydrate in N,N-dimethyl formamide (DMF) to form a mixture solution; and 5 heating the mixture solution and gradually dropping a heating temperature to form the nanoparticles.
[Claim 9] The method of claim 8, wherein the vapor-phase carbon source contains CH₄ gas.
Layer stacks claimed or described, ordered top of device to substrate.
photodetector (PD)
Materials described outside the worked examples.
graphene thin film
C
nanoparticles (generic, without matrix material)
zinc oxide
ZnO
copper oxide
CuO
barium carbonate
BaCO₃
bismuth oxide
Bi₂O₃
boron oxide
B₂O₃
calcium carbonate
CaCO₃
cerium oxide
CeO₂
chromium oxide
Cr₂O₃
iron oxide
Fe₂O₃
gallium oxide
Ga₂O₃
indium oxide
In₂O₃
lithium carbonate
Li₂CO₃
lithium cobalt oxide
LiCoO₂
magnesium oxide
MgO
manganese carbonate
MnCO₃
manganese oxide
MnO₂
manganese tetroxide
Mn₃O₄
niobium oxide
Nb₂O₅
lead oxide
PbO
antimony oxide
Sb₂O₃
tin oxide
SnO₂
strontium carbonate
SrCO₃
tantalum oxide
Ta₂O₅
titanium oxide
TiO₂
barium titanate
BaTiO₃
vanadium oxide
V₂O₅
tungsten oxide
WO₃
zirconium oxide
ZrO₂
gallium nitride
GaN
aluminum gallium nitride
AlxGa₁-xN
silicon carbide
SiC
zinc sulfide
ZnS
metal acetate dihydrate
N,N-dimethylformamide
DMF
methane
CH₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9. The cooling process is an important step for uniformly educing the graphene to obtain a high- quality graphene thin film 260. A rapid cooling process …
FIG. 12. Since 10 carbon atoms are stacked as a single layer or a double or triple layer and the graphene thin film 20 has a very small thickness, a channel 35 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Operating Voltage | 3 V | C |
Related documents with shared materials, methods, properties, or citations.
ELECTRON EMITTING DEVICE USING GRAPHENE AND METHOD FOR MANUFACTURING SAME
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GRAPHENE FILM MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
APPARATUS AND METHOD OF MANUFACTURING GRAPHENE FILM
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GRAPHENE STRUCTURE AND METHOD FOR MANUFACTURING GRAPHENE HAVING WRINKLE PATTERN
METHOD AND SYSTEM FOR FORMING DOPED REGIONS BY DIFFUSION GALLIUM NITRIDE MATERIALS
PREPARATION METHOD FOR GaAs/Ge/GaAs HETEROGENEOUS SPINTRONIC (SPiN) DIODE FOR LOOP ANTENNA
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, thereby completing fabrication of a UV PD. 20 4. Current-voltage (I -V) characteristics of a PD fabricated according to the embodiment of the present …
FIGS. 2 and 3, which functioned as an electrode to be connected to an external circuit. 4) The external circuit was connected as shown in
FIG. 4. The method of fabricating the PD 100 shown in
FIG. 5). The graphene thin film 20 is easily adhered onto 1 5 the device substrate 10 due to van der Waals force, and no additional adhesive material or process …
FIG. 6). Thus, graphene is 15 educed on the metal graphite layer 220 from the carbon component solidly dissolved in the graphite metal layer 220 and a graphene …
FIGS. 7 through 9 are schematic diagrams co rr esponding to the flowchart of
FIG. 8 (refer to step S 1 of
FIG. 9. The cooling process is an important step for uniformly educing the graphene to obtain a high- quality graphene thin film 260. A rapid cooling process …
FIG. 10. Referring to FI G. 11, when UV light is incident (- A -), a large current of several mA or more is supplied to a device. The obtained current of …
FIG. 11 20 using the PET substrate. However, when the PET substrate is used, the device may be bent, unlike when the glass substrate is used, thereby enabling …
FIG. 12. Since 10 carbon atoms are stacked as a single layer or a double or triple layer and the graphene thin film 20 has a very small thickness, a channel 35 …
FIG. 13, the UV light is absorbed by the ZnO nanoparticles. The absorbed UV light form electron-hole pairs in the ZnO nanoparticles 40. Among the electron-hole …
FIG. 25 6. To begin with, a substrate 210 on which a graphite metal layer 220 is formed is prepared as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
[CLAIMS] [Claim 1] A photodetector (PD) comprising: 5 a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source; and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material.
[Claim 2] The PD of claim 1, wherein the nanoparticles are one selected from the group consisting of zin c oxide (ZnO), copper oxide (C uO), barium carbonate (BaCO₃), bismuth oxide (B i2O₃), boron oxide (B 203), calcium carbonate (CaCO₃), cerium oxide (CeO₂), chromium oxide (Cr₂ 03), iron oxide (Fe₂ 03), gallium oxide (Ga₂ O₃), 15 indium oxide (In₂O 3), lithium carbonate (Li₂CO₃), lithium cobalt oxide (LiC oO 2), magnesium oxide (MgO), manganese carbonate (MnCO₃), manganese oxide (MnO₂), manganese tetroxide (Mn₃ O₄), niobium oxide (Nb₂ O 5), lead oxide (PbO), antimony oxide (Sb₂ O₃), tin oxide (SnO₂), strontium carbonate (SrCO₃), tantalum oxide (Ta₂ O 5), titanium oxide (TiO₂), barium titanate (BaTiO₃), vanadium oxide (V₂₀₅), 20 tungsten oxide (W O 3), zirconium oxide (ZrO₂), gallium nitride (GaN), aluminum gallium nitride (A lxGapx N), silicon carbide (SiC), and zin c sulfide (ZnS).
[Claim 5] The method of claim 3, wherein the forming of the nanoparticle layer comprises: preparing a solution in which nanoparticles are dispersed; forming a mask covering the electrode region of the graphene thin film on the 20 graphene thin film; spin-coating the solution, in which the nanoparticles are dispersed, on the graphene thin film on which the mask is formed and drying the solution to form the nanoparticle layer formed of the nanoparticles without the matrix material; and removing the mask.
[Claim 6] 30 The method of any one of claims 4 and 5, wherein the preparing of the solution in which the nanoparticles are dispersed comprises: dissolving a metal acetate dihydrate in N,N-dimethyl formamide (DMF) to form a mixture solution; and 5 heating the mixture solution and gradually dropping a heating temperature to form the nanoparticles.
[Claim 9] The method of claim 8, wherein the vapor-phase carbon source contains CH₄ gas.
Layer stacks claimed or described, ordered top of device to substrate.
photodetector (PD)
Materials described outside the worked examples.
graphene thin film
C
nanoparticles (generic, without matrix material)
zinc oxide
ZnO
copper oxide
CuO
barium carbonate
BaCO₃
bismuth oxide
Bi₂O₃
boron oxide
B₂O₃
calcium carbonate
CaCO₃
cerium oxide
CeO₂
chromium oxide
Cr₂O₃
iron oxide
Fe₂O₃
gallium oxide
Ga₂O₃
indium oxide
In₂O₃
lithium carbonate
Li₂CO₃
lithium cobalt oxide
LiCoO₂
magnesium oxide
MgO
manganese carbonate
MnCO₃
manganese oxide
MnO₂
manganese tetroxide
Mn₃O₄
niobium oxide
Nb₂O₅
lead oxide
PbO
antimony oxide
Sb₂O₃
tin oxide
SnO₂
strontium carbonate
SrCO₃
tantalum oxide
Ta₂O₅
titanium oxide
TiO₂
barium titanate
BaTiO₃
vanadium oxide
V₂O₅
tungsten oxide
WO₃
zirconium oxide
ZrO₂
gallium nitride
GaN
aluminum gallium nitride
AlxGa₁-xN
silicon carbide
SiC
zinc sulfide
ZnS
metal acetate dihydrate
N,N-dimethylformamide
DMF
methane
CH₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9. The cooling process is an important step for uniformly educing the graphene to obtain a high- quality graphene thin film 260. A rapid cooling process …
FIG. 12. Since 10 carbon atoms are stacked as a single layer or a double or triple layer and the graphene thin film 20 has a very small thickness, a channel 35 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Operating Voltage | 3 V | C |
Related documents with shared materials, methods, properties, or citations.
ELECTRON EMITTING DEVICE USING GRAPHENE AND METHOD FOR MANUFACTURING SAME
TFT ARRAY SUBSTRATE AND A METHOD FOR MANUFACTURING THE SAME AND GRAPHENE BASED DISPLAY DEVICE
GRAPHENE FILM MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
APPARATUS AND METHOD OF MANUFACTURING GRAPHENE FILM
GRAPHENE IN OPTICAL SYSTEMS
GRAPHENE STRUCTURE AND METHOD FOR MANUFACTURING GRAPHENE HAVING WRINKLE PATTERN
METHOD AND SYSTEM FOR FORMING DOPED REGIONS BY DIFFUSION GALLIUM NITRIDE MATERIALS
PREPARATION METHOD FOR GaAs/Ge/GaAs HETEROGENEOUS SPINTRONIC (SPiN) DIODE FOR LOOP ANTENNA
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, thereby completing fabrication of a UV PD. 20 4. Current-voltage (I -V) characteristics of a PD fabricated according to the embodiment of the present …
FIGS. 2 and 3, which functioned as an electrode to be connected to an external circuit. 4) The external circuit was connected as shown in
FIG. 4. The method of fabricating the PD 100 shown in
FIG. 5). The graphene thin film 20 is easily adhered onto 1 5 the device substrate 10 due to van der Waals force, and no additional adhesive material or process …
FIG. 6). Thus, graphene is 15 educed on the metal graphite layer 220 from the carbon component solidly dissolved in the graphite metal layer 220 and a graphene …
FIGS. 7 through 9 are schematic diagrams co rr esponding to the flowchart of
FIG. 8 (refer to step S 1 of
FIG. 9. The cooling process is an important step for uniformly educing the graphene to obtain a high- quality graphene thin film 260. A rapid cooling process …
FIG. 10. Referring to FI G. 11, when UV light is incident (- A -), a large current of several mA or more is supplied to a device. The obtained current of …
FIG. 11 20 using the PET substrate. However, when the PET substrate is used, the device may be bent, unlike when the glass substrate is used, thereby enabling …
FIG. 12. Since 10 carbon atoms are stacked as a single layer or a double or triple layer and the graphene thin film 20 has a very small thickness, a channel 35 …
FIG. 13, the UV light is absorbed by the ZnO nanoparticles. The absorbed UV light form electron-hole pairs in the ZnO nanoparticles 40. Among the electron-hole …
FIG. 25 6. To begin with, a substrate 210 on which a graphite metal layer 220 is formed is prepared as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
[CLAIMS] [Claim 1] A photodetector (PD) comprising: 5 a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source; and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material.
[Claim 2] The PD of claim 1, wherein the nanoparticles are one selected from the group consisting of zin c oxide (ZnO), copper oxide (C uO), barium carbonate (BaCO₃), bismuth oxide (B i2O₃), boron oxide (B 203), calcium carbonate (CaCO₃), cerium oxide (CeO₂), chromium oxide (Cr₂ 03), iron oxide (Fe₂ 03), gallium oxide (Ga₂ O₃), 15 indium oxide (In₂O 3), lithium carbonate (Li₂CO₃), lithium cobalt oxide (LiC oO 2), magnesium oxide (MgO), manganese carbonate (MnCO₃), manganese oxide (MnO₂), manganese tetroxide (Mn₃ O₄), niobium oxide (Nb₂ O 5), lead oxide (PbO), antimony oxide (Sb₂ O₃), tin oxide (SnO₂), strontium carbonate (SrCO₃), tantalum oxide (Ta₂ O 5), titanium oxide (TiO₂), barium titanate (BaTiO₃), vanadium oxide (V₂₀₅), 20 tungsten oxide (W O 3), zirconium oxide (ZrO₂), gallium nitride (GaN), aluminum gallium nitride (A lxGapx N), silicon carbide (SiC), and zin c sulfide (ZnS).
[Claim 5] The method of claim 3, wherein the forming of the nanoparticle layer comprises: preparing a solution in which nanoparticles are dispersed; forming a mask covering the electrode region of the graphene thin film on the 20 graphene thin film; spin-coating the solution, in which the nanoparticles are dispersed, on the graphene thin film on which the mask is formed and drying the solution to form the nanoparticle layer formed of the nanoparticles without the matrix material; and removing the mask.
[Claim 6] 30 The method of any one of claims 4 and 5, wherein the preparing of the solution in which the nanoparticles are dispersed comprises: dissolving a metal acetate dihydrate in N,N-dimethyl formamide (DMF) to form a mixture solution; and 5 heating the mixture solution and gradually dropping a heating temperature to form the nanoparticles.
[Claim 9] The method of claim 8, wherein the vapor-phase carbon source contains CH₄ gas.
Layer stacks claimed or described, ordered top of device to substrate.
photodetector (PD)
Materials described outside the worked examples.
graphene thin film
C
nanoparticles (generic, without matrix material)
zinc oxide
ZnO
copper oxide
CuO
barium carbonate
BaCO₃
bismuth oxide
Bi₂O₃
boron oxide
B₂O₃
calcium carbonate
CaCO₃
cerium oxide
CeO₂
chromium oxide
Cr₂O₃
iron oxide
Fe₂O₃
gallium oxide
Ga₂O₃
indium oxide
In₂O₃
lithium carbonate
Li₂CO₃
lithium cobalt oxide
LiCoO₂
magnesium oxide
MgO
manganese carbonate
MnCO₃
manganese oxide
MnO₂
manganese tetroxide
Mn₃O₄
niobium oxide
Nb₂O₅
lead oxide
PbO
antimony oxide
Sb₂O₃
tin oxide
SnO₂
strontium carbonate
SrCO₃
tantalum oxide
Ta₂O₅
titanium oxide
TiO₂
barium titanate
BaTiO₃
vanadium oxide
V₂O₅
tungsten oxide
WO₃
zirconium oxide
ZrO₂
gallium nitride
GaN
aluminum gallium nitride
AlxGa₁-xN
silicon carbide
SiC
zinc sulfide
ZnS
metal acetate dihydrate
N,N-dimethylformamide
DMF
methane
CH₄
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9. The cooling process is an important step for uniformly educing the graphene to obtain a high- quality graphene thin film 260. A rapid cooling process …
FIG. 12. Since 10 carbon atoms are stacked as a single layer or a double or triple layer and the graphene thin film 20 has a very small thickness, a channel 35 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Operating Voltage | 3 V | C |
Related documents with shared materials, methods, properties, or citations.
ELECTRON EMITTING DEVICE USING GRAPHENE AND METHOD FOR MANUFACTURING SAME
TFT ARRAY SUBSTRATE AND A METHOD FOR MANUFACTURING THE SAME AND GRAPHENE BASED DISPLAY DEVICE
GRAPHENE FILM MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
APPARATUS AND METHOD OF MANUFACTURING GRAPHENE FILM
GRAPHENE IN OPTICAL SYSTEMS
GRAPHENE STRUCTURE AND METHOD FOR MANUFACTURING GRAPHENE HAVING WRINKLE PATTERN
METHOD AND SYSTEM FOR FORMING DOPED REGIONS BY DIFFUSION GALLIUM NITRIDE MATERIALS
PREPARATION METHOD FOR GaAs/Ge/GaAs HETEROGENEOUS SPINTRONIC (SPiN) DIODE FOR LOOP ANTENNA