Patent
US 10,553,684OPTICAL SENSOR AND IMAGE SENSOR INCLUDING GRAPHENE QUANTUM DOTS
Jaeho LEE
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,553,684Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cr o ss-sectional view of a structure of an optical sensor according to s o me example embodiments; [36]
FIG. 2 is a graph showing an example change in absorption characteristics of an optical sensing layer including graphene quantum dots according to process …
FIG. 3 is a schematic cross-sectional view of a structure of an optical sensor according to some example embodiments; [38]
FIG. 4 is a graph providing an example of the absorption characteristics of an optical sensing layer of the optical sensor shown in
FIG. 5 is a schematic cross- sectional view of a structure of an optical sensor according to s o me example embodiments; [40]
FIGS. 6 A and 6 B are example energy band diagrams of the optical sensor sho wn in
FIG. 7 is a schematic cr o ss-sectional view of a structure of an optical sensor according to some example embodiments; [42]
FIG. 8 is a schematic cross-sectional view of a structure of an optical sensor according to some example embodiments; [43]
FIG. 9A is a schematic cross- sectional view of a structure of one pixel of an image sensor according to some example embodiments; [44]
FIG. 10 is a schematic cr o ss-sectional view of a structure of one pixel of an image sensor according to s o me example embodiments; and [46]
FIG. 11 is a schematic cross-sectional view of a structure of one pixel of an image sensor according to some example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. An optical sensor comprising: a first electrode; a graphene quantum d ot layer, the graphene quantum cl ot layer including a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum cl ots bonded to a second functional group that is different from the first functional group; and a second electrode on the graphene quantum dot layer. Original
The optical sensor of claim 1, wherein the first functional group is bonded to one or more carbon atoms at an outermost portion of the plurality of first graphene quantum d ots, and the second functional group is bonded to one or more carbon atoms at an outermost portion of the plurality of second graphene quantum dots. Original
The optical sensor of claim 1, wherein the plurality of first graphene quantum cl ots are configured to absorb light of a first wavelength band, and the plurality of second graphene quantum dots ar e configured to absorb light of a second wavelength band that is different from the first wavelength band. Original
The optical sensor of claim 1, wherein each of the first functional group and the second functional group independently include at least one of -N O 2,-NH 2, -C l- 3, -OH, -COO H, = 0, -C H O, -COCH 3, -(C= 0)-, -F, -H, -CO-N(C H 3) 2, -C H 2 -OH,-CO-NH,,, -N(CH 3) 2, alk y lamine, aniline, or polyethylene glycol (PEG). Original
The optical sensor of claim 1, wherein the plurality of first graphene quantum d ots have a first size, and the plurality of second graphene quantum dots have a second size that is different from the first size. Original
7. The optical sensor of claim 1, wherein a thickness of the graphene quantum d o t layer ranges from about 50 nm to about 100 Pm. Original
8. The optical sensor of claim 1, further comprising: a semiconductor layer between the first electrode and the graphene quantum dot layer. Original
The optical sensor of claim 1, wherein the second electrode is a transparent electrode. Original
The optical sensor of claim 1, further comprising: an optical sensing layer on the first electrode, wherein the optical sensing layer includes the graphene quantum dot layer. Original
An image sensor, comprising: the optical sensor of claim 1; and a signal processing layer configured to process an optical signal detected by the optical sensor into an electric signal. Original
An optical sensor comprising: a first electrode; a semiconductor layer on the first electrode, a material of the semiconductor layer forming a Schottky barrier between the semiconductor layer and the first electrode; a graphen e quantum dot layer on the semiconductor layer, the graphene qu an tum dot layer including a plurality of first graphene quantum dots bonded to a first functional group; and a second electrode on the graphene quantum dot layer. Original
T he optical sensor of claim 16, wherein an ener gy difference between a lowest unoccupied molecular orbital (LU M O) ener gy level of the graphene quantum dot layer and a valence band of the semiconductor layer is smaller than an ener gy difference between a work function of the first electrode and a conduction band of the semiconductor layer. Original
The optical sensor of claim 16, wherein the graphene quantu m dot layer further includes a plurality of second graphene quantum cl ots bonded to a second functional group different from the first functional group, the plurality of first graphen e quantum dots are configured to absorb light of a first wavelength band, a nd the plurality of second grap he ne quantum d ots are configured to absorb light of a second wavelength band different from the first wavelength band. Original
The optical sensor of claim 16, wherein the semiconductor layer includes at least one of silicon, a compound semiconductor material, an organic semiconductor material, and a 2 D semiconductor material having a band gap and a 2 D cry stal structure. Original
The optical sensor of claim 16, wherein the semiconductor layer includes a first semiconductor layer on the first electrode and a second semiconductor layer on the first semiconductor layer, the first semiconductor layer is doped to a first conductivity type, and the second semiconductor layer is doped to a second conductivity type that is electrically opposite the first conductivity type. Original
The optical sensor of claim 16, wherein the second electrode is a transparent electrode. Original
The optical sensor of claim 16, further comprising: a plurality of semiconductor layers and a plurality of graphene quantum dot layers that are alternately disposed between the first electrode and the second electrode, wherein the fi r st electrode and the second electrode face each other, the second electrode is on the first electrode, the plurality of the semiconductor layers include the semiconductor layer, the plurality of graphene quantum d ot layers include the graphene quantum dot layer, each of the plurality of graphene quantum dot layers include the plurality of first graphene quantum dots bon d ed to the first functional group, the plurality of semiconductor layers including a first semiconductor layer on the first electrode and a second semiconductor layer between two adjacent graphene quantum d ot layers among the plurality of graphene quantum d ot layers, and the first semiconductor layer is the semiconductor layer such that a material of the first semiconductor layer forms a Schottky barrier between the plurality of semiconductor layers and the first electrode..7 Original
The optical sensor of cla i m 18, wherein the plurality of first graphene quantum dots have a first size, and the plurality of second graphene quantum dots have a second size that is different from the first size. Original
The image sensor of cla i m 29, wherein each of the first optical sensing layer and the second optical sensing layer further includes: a third graphene qua n tum dot layer including a plurality of graphene quantum dots bonded to a third functional group that is different from the first functional group and the second functional group; and a fourth graphene quantum dot layer in c luding a plurality of fourth graphene quantum cl different from the first functional group through
The image sensor of claim 30, wherein sizes fourth graphene quantum cl ots ar e different from ots bonded to a fourth functional group that is the third functional group. Original of f irst graphene quantum d ots through the one an other. Original
Layer stacks claimed or described, ordered top of device to substrate.
optical sensor with mixed-functional-group GQD layer (claim 1 type)
optical sensor with semiconductor interlayer and GQD layer (claim 8 type)
Materials described outside the worked examples.
first graphene quantum dots bonded to a first functional group
second graphene quantum dots bonded to a second functional group
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing an example change in absorption characteristics of an optical sensing layer including graphene quantum dots according to process …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene quantum dot layer thickness | 50–100000 nm | graphene quantum dot layer |
Thickness | 2–20 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,553,684Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cr o ss-sectional view of a structure of an optical sensor according to s o me example embodiments; [36]
FIG. 2 is a graph showing an example change in absorption characteristics of an optical sensing layer including graphene quantum dots according to process …
FIG. 3 is a schematic cross-sectional view of a structure of an optical sensor according to some example embodiments; [38]
FIG. 4 is a graph providing an example of the absorption characteristics of an optical sensing layer of the optical sensor shown in
FIG. 5 is a schematic cross- sectional view of a structure of an optical sensor according to s o me example embodiments; [40]
FIGS. 6 A and 6 B are example energy band diagrams of the optical sensor sho wn in
FIG. 7 is a schematic cr o ss-sectional view of a structure of an optical sensor according to some example embodiments; [42]
FIG. 8 is a schematic cross-sectional view of a structure of an optical sensor according to some example embodiments; [43]
FIG. 9A is a schematic cross- sectional view of a structure of one pixel of an image sensor according to some example embodiments; [44]
FIG. 10 is a schematic cr o ss-sectional view of a structure of one pixel of an image sensor according to s o me example embodiments; and [46]
FIG. 11 is a schematic cross-sectional view of a structure of one pixel of an image sensor according to some example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. An optical sensor comprising: a first electrode; a graphene quantum d ot layer, the graphene quantum cl ot layer including a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum cl ots bonded to a second functional group that is different from the first functional group; and a second electrode on the graphene quantum dot layer. Original
The optical sensor of claim 1, wherein the first functional group is bonded to one or more carbon atoms at an outermost portion of the plurality of first graphene quantum d ots, and the second functional group is bonded to one or more carbon atoms at an outermost portion of the plurality of second graphene quantum dots. Original
The optical sensor of claim 1, wherein the plurality of first graphene quantum cl ots are configured to absorb light of a first wavelength band, and the plurality of second graphene quantum dots ar e configured to absorb light of a second wavelength band that is different from the first wavelength band. Original
The optical sensor of claim 1, wherein each of the first functional group and the second functional group independently include at least one of -N O 2,-NH 2, -C l- 3, -OH, -COO H, = 0, -C H O, -COCH 3, -(C= 0)-, -F, -H, -CO-N(C H 3) 2, -C H 2 -OH,-CO-NH,,, -N(CH 3) 2, alk y lamine, aniline, or polyethylene glycol (PEG). Original
The optical sensor of claim 1, wherein the plurality of first graphene quantum d ots have a first size, and the plurality of second graphene quantum dots have a second size that is different from the first size. Original
7. The optical sensor of claim 1, wherein a thickness of the graphene quantum d o t layer ranges from about 50 nm to about 100 Pm. Original
8. The optical sensor of claim 1, further comprising: a semiconductor layer between the first electrode and the graphene quantum dot layer. Original
The optical sensor of claim 1, wherein the second electrode is a transparent electrode. Original
The optical sensor of claim 1, further comprising: an optical sensing layer on the first electrode, wherein the optical sensing layer includes the graphene quantum dot layer. Original
An image sensor, comprising: the optical sensor of claim 1; and a signal processing layer configured to process an optical signal detected by the optical sensor into an electric signal. Original
An optical sensor comprising: a first electrode; a semiconductor layer on the first electrode, a material of the semiconductor layer forming a Schottky barrier between the semiconductor layer and the first electrode; a graphen e quantum dot layer on the semiconductor layer, the graphene qu an tum dot layer including a plurality of first graphene quantum dots bonded to a first functional group; and a second electrode on the graphene quantum dot layer. Original
T he optical sensor of claim 16, wherein an ener gy difference between a lowest unoccupied molecular orbital (LU M O) ener gy level of the graphene quantum dot layer and a valence band of the semiconductor layer is smaller than an ener gy difference between a work function of the first electrode and a conduction band of the semiconductor layer. Original
The optical sensor of claim 16, wherein the graphene quantu m dot layer further includes a plurality of second graphene quantum cl ots bonded to a second functional group different from the first functional group, the plurality of first graphen e quantum dots are configured to absorb light of a first wavelength band, a nd the plurality of second grap he ne quantum d ots are configured to absorb light of a second wavelength band different from the first wavelength band. Original
The optical sensor of claim 16, wherein the semiconductor layer includes at least one of silicon, a compound semiconductor material, an organic semiconductor material, and a 2 D semiconductor material having a band gap and a 2 D cry stal structure. Original
The optical sensor of claim 16, wherein the semiconductor layer includes a first semiconductor layer on the first electrode and a second semiconductor layer on the first semiconductor layer, the first semiconductor layer is doped to a first conductivity type, and the second semiconductor layer is doped to a second conductivity type that is electrically opposite the first conductivity type. Original
The optical sensor of claim 16, wherein the second electrode is a transparent electrode. Original
The optical sensor of claim 16, further comprising: a plurality of semiconductor layers and a plurality of graphene quantum dot layers that are alternately disposed between the first electrode and the second electrode, wherein the fi r st electrode and the second electrode face each other, the second electrode is on the first electrode, the plurality of the semiconductor layers include the semiconductor layer, the plurality of graphene quantum d ot layers include the graphene quantum dot layer, each of the plurality of graphene quantum dot layers include the plurality of first graphene quantum dots bon d ed to the first functional group, the plurality of semiconductor layers including a first semiconductor layer on the first electrode and a second semiconductor layer between two adjacent graphene quantum d ot layers among the plurality of graphene quantum d ot layers, and the first semiconductor layer is the semiconductor layer such that a material of the first semiconductor layer forms a Schottky barrier between the plurality of semiconductor layers and the first electrode..7 Original
The optical sensor of cla i m 18, wherein the plurality of first graphene quantum dots have a first size, and the plurality of second graphene quantum dots have a second size that is different from the first size. Original
The image sensor of cla i m 29, wherein each of the first optical sensing layer and the second optical sensing layer further includes: a third graphene qua n tum dot layer including a plurality of graphene quantum dots bonded to a third functional group that is different from the first functional group and the second functional group; and a fourth graphene quantum dot layer in c luding a plurality of fourth graphene quantum cl different from the first functional group through
The image sensor of claim 30, wherein sizes fourth graphene quantum cl ots ar e different from ots bonded to a fourth functional group that is the third functional group. Original of f irst graphene quantum d ots through the one an other. Original
Layer stacks claimed or described, ordered top of device to substrate.
optical sensor with mixed-functional-group GQD layer (claim 1 type)
optical sensor with semiconductor interlayer and GQD layer (claim 8 type)
Materials described outside the worked examples.
first graphene quantum dots bonded to a first functional group
second graphene quantum dots bonded to a second functional group
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing an example change in absorption characteristics of an optical sensing layer including graphene quantum dots according to process …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene quantum dot layer thickness | 50–100000 nm | graphene quantum dot layer |
Thickness | 2–20 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,553,684Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cr o ss-sectional view of a structure of an optical sensor according to s o me example embodiments; [36]
FIG. 2 is a graph showing an example change in absorption characteristics of an optical sensing layer including graphene quantum dots according to process …
FIG. 3 is a schematic cross-sectional view of a structure of an optical sensor according to some example embodiments; [38]
FIG. 4 is a graph providing an example of the absorption characteristics of an optical sensing layer of the optical sensor shown in
FIG. 5 is a schematic cross- sectional view of a structure of an optical sensor according to s o me example embodiments; [40]
FIGS. 6 A and 6 B are example energy band diagrams of the optical sensor sho wn in
FIG. 7 is a schematic cr o ss-sectional view of a structure of an optical sensor according to some example embodiments; [42]
FIG. 8 is a schematic cross-sectional view of a structure of an optical sensor according to some example embodiments; [43]
FIG. 9A is a schematic cross- sectional view of a structure of one pixel of an image sensor according to some example embodiments; [44]
FIG. 10 is a schematic cr o ss-sectional view of a structure of one pixel of an image sensor according to s o me example embodiments; and [46]
FIG. 11 is a schematic cross-sectional view of a structure of one pixel of an image sensor according to some example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. An optical sensor comprising: a first electrode; a graphene quantum d ot layer, the graphene quantum cl ot layer including a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum cl ots bonded to a second functional group that is different from the first functional group; and a second electrode on the graphene quantum dot layer. Original
The optical sensor of claim 1, wherein the first functional group is bonded to one or more carbon atoms at an outermost portion of the plurality of first graphene quantum d ots, and the second functional group is bonded to one or more carbon atoms at an outermost portion of the plurality of second graphene quantum dots. Original
The optical sensor of claim 1, wherein the plurality of first graphene quantum cl ots are configured to absorb light of a first wavelength band, and the plurality of second graphene quantum dots ar e configured to absorb light of a second wavelength band that is different from the first wavelength band. Original
The optical sensor of claim 1, wherein each of the first functional group and the second functional group independently include at least one of -N O 2,-NH 2, -C l- 3, -OH, -COO H, = 0, -C H O, -COCH 3, -(C= 0)-, -F, -H, -CO-N(C H 3) 2, -C H 2 -OH,-CO-NH,,, -N(CH 3) 2, alk y lamine, aniline, or polyethylene glycol (PEG). Original
The optical sensor of claim 1, wherein the plurality of first graphene quantum d ots have a first size, and the plurality of second graphene quantum dots have a second size that is different from the first size. Original
7. The optical sensor of claim 1, wherein a thickness of the graphene quantum d o t layer ranges from about 50 nm to about 100 Pm. Original
8. The optical sensor of claim 1, further comprising: a semiconductor layer between the first electrode and the graphene quantum dot layer. Original
The optical sensor of claim 1, wherein the second electrode is a transparent electrode. Original
The optical sensor of claim 1, further comprising: an optical sensing layer on the first electrode, wherein the optical sensing layer includes the graphene quantum dot layer. Original
An image sensor, comprising: the optical sensor of claim 1; and a signal processing layer configured to process an optical signal detected by the optical sensor into an electric signal. Original
An optical sensor comprising: a first electrode; a semiconductor layer on the first electrode, a material of the semiconductor layer forming a Schottky barrier between the semiconductor layer and the first electrode; a graphen e quantum dot layer on the semiconductor layer, the graphene qu an tum dot layer including a plurality of first graphene quantum dots bonded to a first functional group; and a second electrode on the graphene quantum dot layer. Original
T he optical sensor of claim 16, wherein an ener gy difference between a lowest unoccupied molecular orbital (LU M O) ener gy level of the graphene quantum dot layer and a valence band of the semiconductor layer is smaller than an ener gy difference between a work function of the first electrode and a conduction band of the semiconductor layer. Original
The optical sensor of claim 16, wherein the graphene quantu m dot layer further includes a plurality of second graphene quantum cl ots bonded to a second functional group different from the first functional group, the plurality of first graphen e quantum dots are configured to absorb light of a first wavelength band, a nd the plurality of second grap he ne quantum d ots are configured to absorb light of a second wavelength band different from the first wavelength band. Original
The optical sensor of claim 16, wherein the semiconductor layer includes at least one of silicon, a compound semiconductor material, an organic semiconductor material, and a 2 D semiconductor material having a band gap and a 2 D cry stal structure. Original
The optical sensor of claim 16, wherein the semiconductor layer includes a first semiconductor layer on the first electrode and a second semiconductor layer on the first semiconductor layer, the first semiconductor layer is doped to a first conductivity type, and the second semiconductor layer is doped to a second conductivity type that is electrically opposite the first conductivity type. Original
The optical sensor of claim 16, wherein the second electrode is a transparent electrode. Original
The optical sensor of claim 16, further comprising: a plurality of semiconductor layers and a plurality of graphene quantum dot layers that are alternately disposed between the first electrode and the second electrode, wherein the fi r st electrode and the second electrode face each other, the second electrode is on the first electrode, the plurality of the semiconductor layers include the semiconductor layer, the plurality of graphene quantum d ot layers include the graphene quantum dot layer, each of the plurality of graphene quantum dot layers include the plurality of first graphene quantum dots bon d ed to the first functional group, the plurality of semiconductor layers including a first semiconductor layer on the first electrode and a second semiconductor layer between two adjacent graphene quantum d ot layers among the plurality of graphene quantum d ot layers, and the first semiconductor layer is the semiconductor layer such that a material of the first semiconductor layer forms a Schottky barrier between the plurality of semiconductor layers and the first electrode..7 Original
The optical sensor of cla i m 18, wherein the plurality of first graphene quantum dots have a first size, and the plurality of second graphene quantum dots have a second size that is different from the first size. Original
The image sensor of cla i m 29, wherein each of the first optical sensing layer and the second optical sensing layer further includes: a third graphene qua n tum dot layer including a plurality of graphene quantum dots bonded to a third functional group that is different from the first functional group and the second functional group; and a fourth graphene quantum dot layer in c luding a plurality of fourth graphene quantum cl different from the first functional group through
The image sensor of claim 30, wherein sizes fourth graphene quantum cl ots ar e different from ots bonded to a fourth functional group that is the third functional group. Original of f irst graphene quantum d ots through the one an other. Original
Layer stacks claimed or described, ordered top of device to substrate.
optical sensor with mixed-functional-group GQD layer (claim 1 type)
optical sensor with semiconductor interlayer and GQD layer (claim 8 type)
Materials described outside the worked examples.
first graphene quantum dots bonded to a first functional group
second graphene quantum dots bonded to a second functional group
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing an example change in absorption characteristics of an optical sensing layer including graphene quantum dots according to process …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene quantum dot layer thickness | 50–100000 nm | graphene quantum dot layer |
Thickness | 2–20 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,553,684Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cr o ss-sectional view of a structure of an optical sensor according to s o me example embodiments; [36]
FIG. 2 is a graph showing an example change in absorption characteristics of an optical sensing layer including graphene quantum dots according to process …
FIG. 3 is a schematic cross-sectional view of a structure of an optical sensor according to some example embodiments; [38]
FIG. 4 is a graph providing an example of the absorption characteristics of an optical sensing layer of the optical sensor shown in
FIG. 5 is a schematic cross- sectional view of a structure of an optical sensor according to s o me example embodiments; [40]
FIGS. 6 A and 6 B are example energy band diagrams of the optical sensor sho wn in
FIG. 7 is a schematic cr o ss-sectional view of a structure of an optical sensor according to some example embodiments; [42]
FIG. 8 is a schematic cross-sectional view of a structure of an optical sensor according to some example embodiments; [43]
FIG. 9A is a schematic cross- sectional view of a structure of one pixel of an image sensor according to some example embodiments; [44]
FIG. 10 is a schematic cr o ss-sectional view of a structure of one pixel of an image sensor according to s o me example embodiments; and [46]
FIG. 11 is a schematic cross-sectional view of a structure of one pixel of an image sensor according to some example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. An optical sensor comprising: a first electrode; a graphene quantum d ot layer, the graphene quantum cl ot layer including a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum cl ots bonded to a second functional group that is different from the first functional group; and a second electrode on the graphene quantum dot layer. Original
The optical sensor of claim 1, wherein the first functional group is bonded to one or more carbon atoms at an outermost portion of the plurality of first graphene quantum d ots, and the second functional group is bonded to one or more carbon atoms at an outermost portion of the plurality of second graphene quantum dots. Original
The optical sensor of claim 1, wherein the plurality of first graphene quantum cl ots are configured to absorb light of a first wavelength band, and the plurality of second graphene quantum dots ar e configured to absorb light of a second wavelength band that is different from the first wavelength band. Original
The optical sensor of claim 1, wherein each of the first functional group and the second functional group independently include at least one of -N O 2,-NH 2, -C l- 3, -OH, -COO H, = 0, -C H O, -COCH 3, -(C= 0)-, -F, -H, -CO-N(C H 3) 2, -C H 2 -OH,-CO-NH,,, -N(CH 3) 2, alk y lamine, aniline, or polyethylene glycol (PEG). Original
The optical sensor of claim 1, wherein the plurality of first graphene quantum d ots have a first size, and the plurality of second graphene quantum dots have a second size that is different from the first size. Original
7. The optical sensor of claim 1, wherein a thickness of the graphene quantum d o t layer ranges from about 50 nm to about 100 Pm. Original
8. The optical sensor of claim 1, further comprising: a semiconductor layer between the first electrode and the graphene quantum dot layer. Original
The optical sensor of claim 1, wherein the second electrode is a transparent electrode. Original
The optical sensor of claim 1, further comprising: an optical sensing layer on the first electrode, wherein the optical sensing layer includes the graphene quantum dot layer. Original
An image sensor, comprising: the optical sensor of claim 1; and a signal processing layer configured to process an optical signal detected by the optical sensor into an electric signal. Original
An optical sensor comprising: a first electrode; a semiconductor layer on the first electrode, a material of the semiconductor layer forming a Schottky barrier between the semiconductor layer and the first electrode; a graphen e quantum dot layer on the semiconductor layer, the graphene qu an tum dot layer including a plurality of first graphene quantum dots bonded to a first functional group; and a second electrode on the graphene quantum dot layer. Original
T he optical sensor of claim 16, wherein an ener gy difference between a lowest unoccupied molecular orbital (LU M O) ener gy level of the graphene quantum dot layer and a valence band of the semiconductor layer is smaller than an ener gy difference between a work function of the first electrode and a conduction band of the semiconductor layer. Original
The optical sensor of claim 16, wherein the graphene quantu m dot layer further includes a plurality of second graphene quantum cl ots bonded to a second functional group different from the first functional group, the plurality of first graphen e quantum dots are configured to absorb light of a first wavelength band, a nd the plurality of second grap he ne quantum d ots are configured to absorb light of a second wavelength band different from the first wavelength band. Original
The optical sensor of claim 16, wherein the semiconductor layer includes at least one of silicon, a compound semiconductor material, an organic semiconductor material, and a 2 D semiconductor material having a band gap and a 2 D cry stal structure. Original
The optical sensor of claim 16, wherein the semiconductor layer includes a first semiconductor layer on the first electrode and a second semiconductor layer on the first semiconductor layer, the first semiconductor layer is doped to a first conductivity type, and the second semiconductor layer is doped to a second conductivity type that is electrically opposite the first conductivity type. Original
The optical sensor of claim 16, wherein the second electrode is a transparent electrode. Original
The optical sensor of claim 16, further comprising: a plurality of semiconductor layers and a plurality of graphene quantum dot layers that are alternately disposed between the first electrode and the second electrode, wherein the fi r st electrode and the second electrode face each other, the second electrode is on the first electrode, the plurality of the semiconductor layers include the semiconductor layer, the plurality of graphene quantum d ot layers include the graphene quantum dot layer, each of the plurality of graphene quantum dot layers include the plurality of first graphene quantum dots bon d ed to the first functional group, the plurality of semiconductor layers including a first semiconductor layer on the first electrode and a second semiconductor layer between two adjacent graphene quantum d ot layers among the plurality of graphene quantum d ot layers, and the first semiconductor layer is the semiconductor layer such that a material of the first semiconductor layer forms a Schottky barrier between the plurality of semiconductor layers and the first electrode..7 Original
The optical sensor of cla i m 18, wherein the plurality of first graphene quantum dots have a first size, and the plurality of second graphene quantum dots have a second size that is different from the first size. Original
The image sensor of cla i m 29, wherein each of the first optical sensing layer and the second optical sensing layer further includes: a third graphene qua n tum dot layer including a plurality of graphene quantum dots bonded to a third functional group that is different from the first functional group and the second functional group; and a fourth graphene quantum dot layer in c luding a plurality of fourth graphene quantum cl different from the first functional group through
The image sensor of claim 30, wherein sizes fourth graphene quantum cl ots ar e different from ots bonded to a fourth functional group that is the third functional group. Original of f irst graphene quantum d ots through the one an other. Original
Layer stacks claimed or described, ordered top of device to substrate.
optical sensor with mixed-functional-group GQD layer (claim 1 type)
optical sensor with semiconductor interlayer and GQD layer (claim 8 type)
Materials described outside the worked examples.
first graphene quantum dots bonded to a first functional group
second graphene quantum dots bonded to a second functional group
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph showing an example change in absorption characteristics of an optical sensing layer including graphene quantum dots according to process …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene quantum dot layer thickness | 50–100000 nm | graphene quantum dot layer |
Thickness | 2–20 nm |
Related documents with shared materials, methods, properties, or citations.
optical sensor with semiconductor Schottky layer and GQD layer (claim 16 type)
optical sensor with alternating semiconductor and GQD layers (claim 23 type)
image sensor including optical sensor and signal processing layer
third graphene quantum dots bonded to a third functional group
graphene quantum dot layer
semiconductor layer
2D semiconductor material/transition metal dichalcogenide
FIG. 2 is a graph showing an example change in absorption characteristics of an optical sensing layer including graphene quantum dots according to process …
FIG. 4 is a graph providing an example of the absorption characteristics of an optical sensing layer of the optical sensor shown in
| — |
optical sensor with semiconductor Schottky layer and GQD layer (claim 16 type)
optical sensor with alternating semiconductor and GQD layers (claim 23 type)
image sensor including optical sensor and signal processing layer
third graphene quantum dots bonded to a third functional group
graphene quantum dot layer
semiconductor layer
2D semiconductor material/transition metal dichalcogenide
FIG. 2 is a graph showing an example change in absorption characteristics of an optical sensing layer including graphene quantum dots according to process …
FIG. 4 is a graph providing an example of the absorption characteristics of an optical sensing layer of the optical sensor shown in
| — |
optical sensor with semiconductor Schottky layer and GQD layer (claim 16 type)
optical sensor with alternating semiconductor and GQD layers (claim 23 type)
image sensor including optical sensor and signal processing layer
third graphene quantum dots bonded to a third functional group
graphene quantum dot layer
semiconductor layer
2D semiconductor material/transition metal dichalcogenide
FIG. 2 is a graph showing an example change in absorption characteristics of an optical sensing layer including graphene quantum dots according to process …
FIG. 4 is a graph providing an example of the absorption characteristics of an optical sensing layer of the optical sensor shown in
| — |
optical sensor with semiconductor Schottky layer and GQD layer (claim 16 type)
optical sensor with alternating semiconductor and GQD layers (claim 23 type)
image sensor including optical sensor and signal processing layer
third graphene quantum dots bonded to a third functional group
graphene quantum dot layer
semiconductor layer
2D semiconductor material/transition metal dichalcogenide
FIG. 2 is a graph showing an example change in absorption characteristics of an optical sensing layer including graphene quantum dots according to process …
FIG. 4 is a graph providing an example of the absorption characteristics of an optical sensing layer of the optical sensor shown in
| — |