Patent
US 8,476,739OF THE INVENTION
Makoto Okai
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,476,739Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
The graphene-on-oxide substrate according to Claim 5, wherein the arithmetic mean surface roughness Ra of the metal oxide layer is 1 nm or less.
The graphene-on-oxide substrate according to Claim 5, wherein the maximum surface height Rz of the metal oxide layer is 10 nm or less.
The graphene-on-oxide substrate according to Claim 5, wherein the graphene layer is formed of graphene crystal grains, and the average grain size of the graphene crystal grains is 5 nm or more.
A graphene-on-oxide substrate, comprising: a substrate having a metal oxide layer formed on its surface; and a graphene layer formed directly on the metal oxide layer, the graphene layer including at least one atomic layer of The- graphene, the graphene layer being grown directly on and parallel to the-a surface of the metal oxide layer, the inter-atomic- l ayer distance between the graphene atomic layer adjacent to the surface of the metal oxide layer and a surface atomic layer of the metal oxide layer being 0.34 nm -2- Docket No. 520.50367X00 Application No. 12/624,437 or less, wherein the metal oxide layer contains aluminum and/or slicn.
The graphene-on-oxide substrate according to Claim 5, wherein the metal oxide layer is polycrystalline, and the average thickness of the polycrystalline metal oxide layer is 10 nm or more and 500 nm or less.
(Withdrawn-Previously Presented) The graphene-on-oxide substrate according to Claim 5, wherein the substrate is a single crystalline metal oxide substrate. withdrawn
The graphene-on-oxide substrate according to Claim 5, having an area of 20 cm 2 or more.
An electro-optical integrated circuit formed in the graphene-on-oxide substrate according to Claim 5.
The graphene-on-oxide substrate according to Claim 5, wherein the inter-atomic-layer distance between the graphene atomic layer adjacent to the surface of the metal oxide layer and the surface atomic layer of the metal oxide layer is 0.30 to 0.34 nm.
The graphene-on-oxide substrate according to Claim 5, wherein the metal oxide layer underlies the graphene layer and the metal oxide layer is disposed between the substrate and the graphene layer.
12-18. canceled
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Layer stacks claimed or described, ordered top of device to substrate.
graphene-on-oxide substrate
electro-optical integrated circuit
Materials described outside the worked examples.
graphene
C
metal oxide layer (containing aluminum and/or silicon)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
inter-atomic-layer distance graphene/metal-oxide interface (claimed upper bound) | ≤ 0.34 | C |
Related documents with shared materials, methods, properties, or citations.
STACKING STRUCTURE HAVING MATERIAL LAYER ON GRAPHENE LAYER AND METHOD OF FORMING MATERIAL LAYER ON GRAPHENE LAYER
Unconventional Spin-orbit Torques by Two-dimensional Multilayered MXenes for Future Nonvolatile Magnetic Memories
Patent
Atlas literature
Patent
US 8,476,739Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
The graphene-on-oxide substrate according to Claim 5, wherein the arithmetic mean surface roughness Ra of the metal oxide layer is 1 nm or less.
The graphene-on-oxide substrate according to Claim 5, wherein the maximum surface height Rz of the metal oxide layer is 10 nm or less.
The graphene-on-oxide substrate according to Claim 5, wherein the graphene layer is formed of graphene crystal grains, and the average grain size of the graphene crystal grains is 5 nm or more.
A graphene-on-oxide substrate, comprising: a substrate having a metal oxide layer formed on its surface; and a graphene layer formed directly on the metal oxide layer, the graphene layer including at least one atomic layer of The- graphene, the graphene layer being grown directly on and parallel to the-a surface of the metal oxide layer, the inter-atomic- l ayer distance between the graphene atomic layer adjacent to the surface of the metal oxide layer and a surface atomic layer of the metal oxide layer being 0.34 nm -2- Docket No. 520.50367X00 Application No. 12/624,437 or less, wherein the metal oxide layer contains aluminum and/or slicn.
The graphene-on-oxide substrate according to Claim 5, wherein the metal oxide layer is polycrystalline, and the average thickness of the polycrystalline metal oxide layer is 10 nm or more and 500 nm or less.
(Withdrawn-Previously Presented) The graphene-on-oxide substrate according to Claim 5, wherein the substrate is a single crystalline metal oxide substrate. withdrawn
The graphene-on-oxide substrate according to Claim 5, having an area of 20 cm 2 or more.
An electro-optical integrated circuit formed in the graphene-on-oxide substrate according to Claim 5.
The graphene-on-oxide substrate according to Claim 5, wherein the inter-atomic-layer distance between the graphene atomic layer adjacent to the surface of the metal oxide layer and the surface atomic layer of the metal oxide layer is 0.30 to 0.34 nm.
The graphene-on-oxide substrate according to Claim 5, wherein the metal oxide layer underlies the graphene layer and the metal oxide layer is disposed between the substrate and the graphene layer.
12-18. canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-on-oxide substrate
electro-optical integrated circuit
Materials described outside the worked examples.
graphene
C
metal oxide layer (containing aluminum and/or silicon)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
inter-atomic-layer distance graphene/metal-oxide interface (claimed upper bound) | ≤ 0.34 | C |
Related documents with shared materials, methods, properties, or citations.
STACKING STRUCTURE HAVING MATERIAL LAYER ON GRAPHENE LAYER AND METHOD OF FORMING MATERIAL LAYER ON GRAPHENE LAYER
Unconventional Spin-orbit Torques by Two-dimensional Multilayered MXenes for Future Nonvolatile Magnetic Memories
Patent
Atlas literature
Patent
US 8,476,739Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
The graphene-on-oxide substrate according to Claim 5, wherein the arithmetic mean surface roughness Ra of the metal oxide layer is 1 nm or less.
The graphene-on-oxide substrate according to Claim 5, wherein the maximum surface height Rz of the metal oxide layer is 10 nm or less.
The graphene-on-oxide substrate according to Claim 5, wherein the graphene layer is formed of graphene crystal grains, and the average grain size of the graphene crystal grains is 5 nm or more.
A graphene-on-oxide substrate, comprising: a substrate having a metal oxide layer formed on its surface; and a graphene layer formed directly on the metal oxide layer, the graphene layer including at least one atomic layer of The- graphene, the graphene layer being grown directly on and parallel to the-a surface of the metal oxide layer, the inter-atomic- l ayer distance between the graphene atomic layer adjacent to the surface of the metal oxide layer and a surface atomic layer of the metal oxide layer being 0.34 nm -2- Docket No. 520.50367X00 Application No. 12/624,437 or less, wherein the metal oxide layer contains aluminum and/or slicn.
The graphene-on-oxide substrate according to Claim 5, wherein the metal oxide layer is polycrystalline, and the average thickness of the polycrystalline metal oxide layer is 10 nm or more and 500 nm or less.
(Withdrawn-Previously Presented) The graphene-on-oxide substrate according to Claim 5, wherein the substrate is a single crystalline metal oxide substrate. withdrawn
The graphene-on-oxide substrate according to Claim 5, having an area of 20 cm 2 or more.
An electro-optical integrated circuit formed in the graphene-on-oxide substrate according to Claim 5.
The graphene-on-oxide substrate according to Claim 5, wherein the inter-atomic-layer distance between the graphene atomic layer adjacent to the surface of the metal oxide layer and the surface atomic layer of the metal oxide layer is 0.30 to 0.34 nm.
The graphene-on-oxide substrate according to Claim 5, wherein the metal oxide layer underlies the graphene layer and the metal oxide layer is disposed between the substrate and the graphene layer.
12-18. canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-on-oxide substrate
electro-optical integrated circuit
Materials described outside the worked examples.
graphene
C
metal oxide layer (containing aluminum and/or silicon)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
inter-atomic-layer distance graphene/metal-oxide interface (claimed upper bound) | ≤ 0.34 | C |
Related documents with shared materials, methods, properties, or citations.
STACKING STRUCTURE HAVING MATERIAL LAYER ON GRAPHENE LAYER AND METHOD OF FORMING MATERIAL LAYER ON GRAPHENE LAYER
Unconventional Spin-orbit Torques by Two-dimensional Multilayered MXenes for Future Nonvolatile Magnetic Memories
Patent
Atlas literature
Patent
US 8,476,739Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
The graphene-on-oxide substrate according to Claim 5, wherein the arithmetic mean surface roughness Ra of the metal oxide layer is 1 nm or less.
The graphene-on-oxide substrate according to Claim 5, wherein the maximum surface height Rz of the metal oxide layer is 10 nm or less.
The graphene-on-oxide substrate according to Claim 5, wherein the graphene layer is formed of graphene crystal grains, and the average grain size of the graphene crystal grains is 5 nm or more.
A graphene-on-oxide substrate, comprising: a substrate having a metal oxide layer formed on its surface; and a graphene layer formed directly on the metal oxide layer, the graphene layer including at least one atomic layer of The- graphene, the graphene layer being grown directly on and parallel to the-a surface of the metal oxide layer, the inter-atomic- l ayer distance between the graphene atomic layer adjacent to the surface of the metal oxide layer and a surface atomic layer of the metal oxide layer being 0.34 nm -2- Docket No. 520.50367X00 Application No. 12/624,437 or less, wherein the metal oxide layer contains aluminum and/or slicn.
The graphene-on-oxide substrate according to Claim 5, wherein the metal oxide layer is polycrystalline, and the average thickness of the polycrystalline metal oxide layer is 10 nm or more and 500 nm or less.
(Withdrawn-Previously Presented) The graphene-on-oxide substrate according to Claim 5, wherein the substrate is a single crystalline metal oxide substrate. withdrawn
The graphene-on-oxide substrate according to Claim 5, having an area of 20 cm 2 or more.
An electro-optical integrated circuit formed in the graphene-on-oxide substrate according to Claim 5.
The graphene-on-oxide substrate according to Claim 5, wherein the inter-atomic-layer distance between the graphene atomic layer adjacent to the surface of the metal oxide layer and the surface atomic layer of the metal oxide layer is 0.30 to 0.34 nm.
The graphene-on-oxide substrate according to Claim 5, wherein the metal oxide layer underlies the graphene layer and the metal oxide layer is disposed between the substrate and the graphene layer.
12-18. canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-on-oxide substrate
electro-optical integrated circuit
Materials described outside the worked examples.
graphene
C
metal oxide layer (containing aluminum and/or silicon)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
inter-atomic-layer distance graphene/metal-oxide interface (claimed upper bound) | ≤ 0.34 | C |
Related documents with shared materials, methods, properties, or citations.
STACKING STRUCTURE HAVING MATERIAL LAYER ON GRAPHENE LAYER AND METHOD OF FORMING MATERIAL LAYER ON GRAPHENE LAYER
Unconventional Spin-orbit Torques by Two-dimensional Multilayered MXenes for Future Nonvolatile Magnetic Memories
field effect transistor with graphene channel
single crystalline alpha-alumina c-plane
Al₂O₃
3C-SiC thin film
SiC
inter-atomic-layer distance graphene/metal-oxide interface (claimed range, claim 19) | 0.3–0.34 | Cmetal oxide layer (containing aluminum and/or silicon) |
Duration | 5–60 minutes | — |
Thickness | 0.3–0.34 nm | — |
Duration | 0.5–1 hours | — |
Thickness | 10–500 nm | — |
Thickness | 0.34–25 nm | — |
Thickness | 0.34–30 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 1 nm | — |
field effect transistor with graphene channel
single crystalline alpha-alumina c-plane
Al₂O₃
3C-SiC thin film
SiC
inter-atomic-layer distance graphene/metal-oxide interface (claimed range, claim 19) | 0.3–0.34 | Cmetal oxide layer (containing aluminum and/or silicon) |
Duration | 5–60 minutes | — |
Thickness | 0.3–0.34 nm | — |
Duration | 0.5–1 hours | — |
Thickness | 10–500 nm | — |
Thickness | 0.34–25 nm | — |
Thickness | 0.34–30 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 1 nm | — |
field effect transistor with graphene channel
single crystalline alpha-alumina c-plane
Al₂O₃
3C-SiC thin film
SiC
inter-atomic-layer distance graphene/metal-oxide interface (claimed range, claim 19) | 0.3–0.34 | Cmetal oxide layer (containing aluminum and/or silicon) |
Duration | 5–60 minutes | — |
Thickness | 0.3–0.34 nm | — |
Duration | 0.5–1 hours | — |
Thickness | 10–500 nm | — |
Thickness | 0.34–25 nm | — |
Thickness | 0.34–30 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 1 nm | — |
field effect transistor with graphene channel
single crystalline alpha-alumina c-plane
Al₂O₃
3C-SiC thin film
SiC
inter-atomic-layer distance graphene/metal-oxide interface (claimed range, claim 19) | 0.3–0.34 | Cmetal oxide layer (containing aluminum and/or silicon) |
Duration | 5–60 minutes | — |
Thickness | 0.3–0.34 nm | — |
Duration | 0.5–1 hours | — |
Thickness | 10–500 nm | — |
Thickness | 0.34–25 nm | — |
Thickness | 0.34–30 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 1 nm | — |