Patent
US 9,087,874Methods of Forming Graphene-Containing Switches
Gurtej S. Sandhu
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,087,874Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagrammatic, cross-sectional side view of an example embodiment switch. [0005]
FIG. 2 is a diagrammatic, three-dimensional view of an example embodiment graphene structure that m ay be utilized in the switch of
FIG. 3 is a diagrammatic, cross-sectional side view of another example embodiment switch. [0007]
FIG. 4 is a diagrammatic, cross-sectional view of a construction comprising a pair of example embodiment switches. SVG …
FIG. 5. Such sidewalls may merge in a location outside of the plane of the
FIGS. 6-10 in the illustrated example embodiment. In other embodiments, various of the materials provided at the process stages of
FIG. 7, electrically conductive liners 60 and 62 are formed along the sidewal ls 55 and 57. The liners 60 and 62 may comprise any suitable electrically …
FIG. 8, a top portion of liner 60 is replaced with a dielectric spacer 64. Such replacement may be accomplished utilizing any suitable processing. For …
FIG. 9, a graphene structure 70 is formed along a sidewall of SVG 13763662.02-09-2013.HCZDIL₆TPXXIFW3.SPEC29600798.15.352.1332.2513.1401.svg 0.23 7.203 Graph …
FIG. 10. Such planarized upper surface may be formed with any suitable processing, such as, for example, CMP. Planarized upper surfaces of construction 50 are …
FIG. 11, the top electrode 18 is formed on the planarized upper surface 73. The top electrode 18 is shown comprising electrically conductive material 20. The …
FIGS. 12-15 are diagrammatic, cross-sectional views of a portion of a construction at various stages of an example embodiment method for fabricating a …
FIG. 13, and SVG 13763662.02-09-2013.HCZDIL₆TPXXIFW3.SPEC29600802.12.357.1107.2520.1165.svg 0.193 7.21 Graph Black and white [0068] A conductive material 120 …
FIG. 14, dielectric material 118 is formed to extend over dielectric materials 104 and 112, along the sidewalls of graphene-containing structures 116, and …
FIG. 15 is analogous to that of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method of forming a switch, comprising: forming a first electrically conductive structure over a bottom electrode; forming a graphene structure electrically coupled with the bottom electrode and laterally spaced from the first electrically conductive structure; forming a second electrically conductive structure over the bottom electrode and on an opposing side of the graphene structure from the first electrically conductive structure; forming a top electrode over the graphene structure; the bottom electrode being electrically coupled with one of the first and second electrically conductive structures, the top electrode being electrically coupled with the other of the first and second electrically conductive structures; and wherein the first and second electrically conductive structures impart an electric field across the graphene structure.
The method of claim 21 wherein the switch is formed in an opening over the bottom electrode, and wherein the switch is the only switch formed in the opening over the bottom electrode.
The method of claim 21 wherein the switch is one of a pair of switches that are formed in a common opening over a pair of bottom electrodes.
The method of claim 21 wherein the switch is one of a plurality of switches that are formed in a common opening over a plurality of bottom electrodes. C.\ USE RS\C THOMPSON \ DESKTOP \ M02 DO CX A₂ 70226 1 340N 3 PA T-US \ AM-NEWRULES wpd
The method of claim 21 wherein the forming of the graphene structure comprises: forming seed material along the dielectric material; and epitaxially growing graphene along the seed material.
A method of forming a switch, comprising: forming first and second electrically conductive structures over a bottom electrode and laterally spaced from one another; the first electrically conductive structure directly contacting the bottom electrode, and the second electrically conductive structure not directly contacting the bottom electrode; electrically coupling a graphene structure with the bottom electrode; forming a top electrode over the graphene structure and the first and second electrically conductive structures; the top electrode being electrically coupled with the graphene structure, directly contacting the second electrically conductive structure, and not directly contacting the first electrically conductive structure; and wherein the first and second electrically conductive structures impart an electric field across the graphene structure.
The method of claim 26 wherein the first and second electrically conductive structures are formed simultaneously.
The method of claim 26 wherein the first and second electrically conductive structures are formed sequentially relative to one another. C.\ USE RS\C THOMPSON \ DESKTOP \ M02 DO CX A₂ 70226 1 34 0N 4 PA T-US \ AM-NEWRULES wpd
A method of forming switches, comprising: forming a pair of spaced apart bottom electrodes over a semiconductor substrate; forming a first dielectric material over the bottom electrodes; forming an opening extending through the first dielectric material to the bottom electrodes; forming a pair of metal-containing upwardly-extending electrically conductive structures along sidewalls of the opening, one of the upwardly-extending electrically conductive structures being directly against one of the bottom electrodes and the other of the upwardly- extending electrically conductive structures being directly against the other of the bottom electrodes; forming second dielectric material along sidewalls of the upwardly-extending electrically conductive structures, portions of the bottom electrodes being exposed after formation of the second dielectric material; forming a pair of graphene structures extending upwardly from the exposed portions of the bottom electrodes; a first of the graphene structures being electrically coupled with, and directly over, one of the bottom electrodes; a second of the graphene structures being electrically coupled with, and directly over, the other of the bottom electrodes; forming third dielectric material along sidewalls of the graphene structures; forming a pair of metal-containing downwardly-extending electrically conductive structures along the third dielectric material; forming fourth dielectric material between the downwardly-extending electrically conductive structures; and forming a pair of top electrodes over the graphene structures and the downwardly- extending electrically conductive structures; one of the top electrodes being electrically coupled with the first graphene structure and with one of the downwardly-extending electrically conductive structures, and the other of the top electrodes being electrically coupled with the second graphene structure and with the other of the downwardly-extending electrically conductive structures. C.\ USE RS\C THOMPSON \ DESKTOP \ M02 DO CX A₂ 70226 1 34 0N 5 PA T-US \ AM-NEWRULES wpd
The method of claim 29 wherein the forming of the upwardly-extending electrically conductive structures comprises: deposition of metal-containing electrically conductive material along the sidewalls of the opening and across a bottom of the opening; anistropically etching the electrically conductive material; and recessing the electrically conductive material relative to a top of the opening so that upper surfaces of the upwardly-extending electrically conductive structures are below the top of the opening.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-containing switch
Materials described outside the worked examples.
graphene
seed material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5. Such sidewalls may merge in a location outside of the plane of the
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
maximum graphene layer thickness between nodes | ≤ 5 nm | graphene |
individual graphene layer thickness range | 1–5 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,087,874Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagrammatic, cross-sectional side view of an example embodiment switch. [0005]
FIG. 2 is a diagrammatic, three-dimensional view of an example embodiment graphene structure that m ay be utilized in the switch of
FIG. 3 is a diagrammatic, cross-sectional side view of another example embodiment switch. [0007]
FIG. 4 is a diagrammatic, cross-sectional view of a construction comprising a pair of example embodiment switches. SVG …
FIG. 5. Such sidewalls may merge in a location outside of the plane of the
FIGS. 6-10 in the illustrated example embodiment. In other embodiments, various of the materials provided at the process stages of
FIG. 7, electrically conductive liners 60 and 62 are formed along the sidewal ls 55 and 57. The liners 60 and 62 may comprise any suitable electrically …
FIG. 8, a top portion of liner 60 is replaced with a dielectric spacer 64. Such replacement may be accomplished utilizing any suitable processing. For …
FIG. 9, a graphene structure 70 is formed along a sidewall of SVG 13763662.02-09-2013.HCZDIL₆TPXXIFW3.SPEC29600798.15.352.1332.2513.1401.svg 0.23 7.203 Graph …
FIG. 10. Such planarized upper surface may be formed with any suitable processing, such as, for example, CMP. Planarized upper surfaces of construction 50 are …
FIG. 11, the top electrode 18 is formed on the planarized upper surface 73. The top electrode 18 is shown comprising electrically conductive material 20. The …
FIGS. 12-15 are diagrammatic, cross-sectional views of a portion of a construction at various stages of an example embodiment method for fabricating a …
FIG. 13, and SVG 13763662.02-09-2013.HCZDIL₆TPXXIFW3.SPEC29600802.12.357.1107.2520.1165.svg 0.193 7.21 Graph Black and white [0068] A conductive material 120 …
FIG. 14, dielectric material 118 is formed to extend over dielectric materials 104 and 112, along the sidewalls of graphene-containing structures 116, and …
FIG. 15 is analogous to that of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method of forming a switch, comprising: forming a first electrically conductive structure over a bottom electrode; forming a graphene structure electrically coupled with the bottom electrode and laterally spaced from the first electrically conductive structure; forming a second electrically conductive structure over the bottom electrode and on an opposing side of the graphene structure from the first electrically conductive structure; forming a top electrode over the graphene structure; the bottom electrode being electrically coupled with one of the first and second electrically conductive structures, the top electrode being electrically coupled with the other of the first and second electrically conductive structures; and wherein the first and second electrically conductive structures impart an electric field across the graphene structure.
The method of claim 21 wherein the switch is formed in an opening over the bottom electrode, and wherein the switch is the only switch formed in the opening over the bottom electrode.
The method of claim 21 wherein the switch is one of a pair of switches that are formed in a common opening over a pair of bottom electrodes.
The method of claim 21 wherein the switch is one of a plurality of switches that are formed in a common opening over a plurality of bottom electrodes. C.\ USE RS\C THOMPSON \ DESKTOP \ M02 DO CX A₂ 70226 1 340N 3 PA T-US \ AM-NEWRULES wpd
The method of claim 21 wherein the forming of the graphene structure comprises: forming seed material along the dielectric material; and epitaxially growing graphene along the seed material.
A method of forming a switch, comprising: forming first and second electrically conductive structures over a bottom electrode and laterally spaced from one another; the first electrically conductive structure directly contacting the bottom electrode, and the second electrically conductive structure not directly contacting the bottom electrode; electrically coupling a graphene structure with the bottom electrode; forming a top electrode over the graphene structure and the first and second electrically conductive structures; the top electrode being electrically coupled with the graphene structure, directly contacting the second electrically conductive structure, and not directly contacting the first electrically conductive structure; and wherein the first and second electrically conductive structures impart an electric field across the graphene structure.
The method of claim 26 wherein the first and second electrically conductive structures are formed simultaneously.
The method of claim 26 wherein the first and second electrically conductive structures are formed sequentially relative to one another. C.\ USE RS\C THOMPSON \ DESKTOP \ M02 DO CX A₂ 70226 1 34 0N 4 PA T-US \ AM-NEWRULES wpd
A method of forming switches, comprising: forming a pair of spaced apart bottom electrodes over a semiconductor substrate; forming a first dielectric material over the bottom electrodes; forming an opening extending through the first dielectric material to the bottom electrodes; forming a pair of metal-containing upwardly-extending electrically conductive structures along sidewalls of the opening, one of the upwardly-extending electrically conductive structures being directly against one of the bottom electrodes and the other of the upwardly- extending electrically conductive structures being directly against the other of the bottom electrodes; forming second dielectric material along sidewalls of the upwardly-extending electrically conductive structures, portions of the bottom electrodes being exposed after formation of the second dielectric material; forming a pair of graphene structures extending upwardly from the exposed portions of the bottom electrodes; a first of the graphene structures being electrically coupled with, and directly over, one of the bottom electrodes; a second of the graphene structures being electrically coupled with, and directly over, the other of the bottom electrodes; forming third dielectric material along sidewalls of the graphene structures; forming a pair of metal-containing downwardly-extending electrically conductive structures along the third dielectric material; forming fourth dielectric material between the downwardly-extending electrically conductive structures; and forming a pair of top electrodes over the graphene structures and the downwardly- extending electrically conductive structures; one of the top electrodes being electrically coupled with the first graphene structure and with one of the downwardly-extending electrically conductive structures, and the other of the top electrodes being electrically coupled with the second graphene structure and with the other of the downwardly-extending electrically conductive structures. C.\ USE RS\C THOMPSON \ DESKTOP \ M02 DO CX A₂ 70226 1 34 0N 5 PA T-US \ AM-NEWRULES wpd
The method of claim 29 wherein the forming of the upwardly-extending electrically conductive structures comprises: deposition of metal-containing electrically conductive material along the sidewalls of the opening and across a bottom of the opening; anistropically etching the electrically conductive material; and recessing the electrically conductive material relative to a top of the opening so that upper surfaces of the upwardly-extending electrically conductive structures are below the top of the opening.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-containing switch
Materials described outside the worked examples.
graphene
seed material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5. Such sidewalls may merge in a location outside of the plane of the
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
maximum graphene layer thickness between nodes | ≤ 5 nm | graphene |
individual graphene layer thickness range | 1–5 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,087,874Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagrammatic, cross-sectional side view of an example embodiment switch. [0005]
FIG. 2 is a diagrammatic, three-dimensional view of an example embodiment graphene structure that m ay be utilized in the switch of
FIG. 3 is a diagrammatic, cross-sectional side view of another example embodiment switch. [0007]
FIG. 4 is a diagrammatic, cross-sectional view of a construction comprising a pair of example embodiment switches. SVG …
FIG. 5. Such sidewalls may merge in a location outside of the plane of the
FIGS. 6-10 in the illustrated example embodiment. In other embodiments, various of the materials provided at the process stages of
FIG. 7, electrically conductive liners 60 and 62 are formed along the sidewal ls 55 and 57. The liners 60 and 62 may comprise any suitable electrically …
FIG. 8, a top portion of liner 60 is replaced with a dielectric spacer 64. Such replacement may be accomplished utilizing any suitable processing. For …
FIG. 9, a graphene structure 70 is formed along a sidewall of SVG 13763662.02-09-2013.HCZDIL₆TPXXIFW3.SPEC29600798.15.352.1332.2513.1401.svg 0.23 7.203 Graph …
FIG. 10. Such planarized upper surface may be formed with any suitable processing, such as, for example, CMP. Planarized upper surfaces of construction 50 are …
FIG. 11, the top electrode 18 is formed on the planarized upper surface 73. The top electrode 18 is shown comprising electrically conductive material 20. The …
FIGS. 12-15 are diagrammatic, cross-sectional views of a portion of a construction at various stages of an example embodiment method for fabricating a …
FIG. 13, and SVG 13763662.02-09-2013.HCZDIL₆TPXXIFW3.SPEC29600802.12.357.1107.2520.1165.svg 0.193 7.21 Graph Black and white [0068] A conductive material 120 …
FIG. 14, dielectric material 118 is formed to extend over dielectric materials 104 and 112, along the sidewalls of graphene-containing structures 116, and …
FIG. 15 is analogous to that of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method of forming a switch, comprising: forming a first electrically conductive structure over a bottom electrode; forming a graphene structure electrically coupled with the bottom electrode and laterally spaced from the first electrically conductive structure; forming a second electrically conductive structure over the bottom electrode and on an opposing side of the graphene structure from the first electrically conductive structure; forming a top electrode over the graphene structure; the bottom electrode being electrically coupled with one of the first and second electrically conductive structures, the top electrode being electrically coupled with the other of the first and second electrically conductive structures; and wherein the first and second electrically conductive structures impart an electric field across the graphene structure.
The method of claim 21 wherein the switch is formed in an opening over the bottom electrode, and wherein the switch is the only switch formed in the opening over the bottom electrode.
The method of claim 21 wherein the switch is one of a pair of switches that are formed in a common opening over a pair of bottom electrodes.
The method of claim 21 wherein the switch is one of a plurality of switches that are formed in a common opening over a plurality of bottom electrodes. C.\ USE RS\C THOMPSON \ DESKTOP \ M02 DO CX A₂ 70226 1 340N 3 PA T-US \ AM-NEWRULES wpd
The method of claim 21 wherein the forming of the graphene structure comprises: forming seed material along the dielectric material; and epitaxially growing graphene along the seed material.
A method of forming a switch, comprising: forming first and second electrically conductive structures over a bottom electrode and laterally spaced from one another; the first electrically conductive structure directly contacting the bottom electrode, and the second electrically conductive structure not directly contacting the bottom electrode; electrically coupling a graphene structure with the bottom electrode; forming a top electrode over the graphene structure and the first and second electrically conductive structures; the top electrode being electrically coupled with the graphene structure, directly contacting the second electrically conductive structure, and not directly contacting the first electrically conductive structure; and wherein the first and second electrically conductive structures impart an electric field across the graphene structure.
The method of claim 26 wherein the first and second electrically conductive structures are formed simultaneously.
The method of claim 26 wherein the first and second electrically conductive structures are formed sequentially relative to one another. C.\ USE RS\C THOMPSON \ DESKTOP \ M02 DO CX A₂ 70226 1 34 0N 4 PA T-US \ AM-NEWRULES wpd
A method of forming switches, comprising: forming a pair of spaced apart bottom electrodes over a semiconductor substrate; forming a first dielectric material over the bottom electrodes; forming an opening extending through the first dielectric material to the bottom electrodes; forming a pair of metal-containing upwardly-extending electrically conductive structures along sidewalls of the opening, one of the upwardly-extending electrically conductive structures being directly against one of the bottom electrodes and the other of the upwardly- extending electrically conductive structures being directly against the other of the bottom electrodes; forming second dielectric material along sidewalls of the upwardly-extending electrically conductive structures, portions of the bottom electrodes being exposed after formation of the second dielectric material; forming a pair of graphene structures extending upwardly from the exposed portions of the bottom electrodes; a first of the graphene structures being electrically coupled with, and directly over, one of the bottom electrodes; a second of the graphene structures being electrically coupled with, and directly over, the other of the bottom electrodes; forming third dielectric material along sidewalls of the graphene structures; forming a pair of metal-containing downwardly-extending electrically conductive structures along the third dielectric material; forming fourth dielectric material between the downwardly-extending electrically conductive structures; and forming a pair of top electrodes over the graphene structures and the downwardly- extending electrically conductive structures; one of the top electrodes being electrically coupled with the first graphene structure and with one of the downwardly-extending electrically conductive structures, and the other of the top electrodes being electrically coupled with the second graphene structure and with the other of the downwardly-extending electrically conductive structures. C.\ USE RS\C THOMPSON \ DESKTOP \ M02 DO CX A₂ 70226 1 34 0N 5 PA T-US \ AM-NEWRULES wpd
The method of claim 29 wherein the forming of the upwardly-extending electrically conductive structures comprises: deposition of metal-containing electrically conductive material along the sidewalls of the opening and across a bottom of the opening; anistropically etching the electrically conductive material; and recessing the electrically conductive material relative to a top of the opening so that upper surfaces of the upwardly-extending electrically conductive structures are below the top of the opening.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-containing switch
Materials described outside the worked examples.
graphene
seed material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5. Such sidewalls may merge in a location outside of the plane of the
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
maximum graphene layer thickness between nodes | ≤ 5 nm | graphene |
individual graphene layer thickness range | 1–5 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,087,874Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagrammatic, cross-sectional side view of an example embodiment switch. [0005]
FIG. 2 is a diagrammatic, three-dimensional view of an example embodiment graphene structure that m ay be utilized in the switch of
FIG. 3 is a diagrammatic, cross-sectional side view of another example embodiment switch. [0007]
FIG. 4 is a diagrammatic, cross-sectional view of a construction comprising a pair of example embodiment switches. SVG …
FIG. 5. Such sidewalls may merge in a location outside of the plane of the
FIGS. 6-10 in the illustrated example embodiment. In other embodiments, various of the materials provided at the process stages of
FIG. 7, electrically conductive liners 60 and 62 are formed along the sidewal ls 55 and 57. The liners 60 and 62 may comprise any suitable electrically …
FIG. 8, a top portion of liner 60 is replaced with a dielectric spacer 64. Such replacement may be accomplished utilizing any suitable processing. For …
FIG. 9, a graphene structure 70 is formed along a sidewall of SVG 13763662.02-09-2013.HCZDIL₆TPXXIFW3.SPEC29600798.15.352.1332.2513.1401.svg 0.23 7.203 Graph …
FIG. 10. Such planarized upper surface may be formed with any suitable processing, such as, for example, CMP. Planarized upper surfaces of construction 50 are …
FIG. 11, the top electrode 18 is formed on the planarized upper surface 73. The top electrode 18 is shown comprising electrically conductive material 20. The …
FIGS. 12-15 are diagrammatic, cross-sectional views of a portion of a construction at various stages of an example embodiment method for fabricating a …
FIG. 13, and SVG 13763662.02-09-2013.HCZDIL₆TPXXIFW3.SPEC29600802.12.357.1107.2520.1165.svg 0.193 7.21 Graph Black and white [0068] A conductive material 120 …
FIG. 14, dielectric material 118 is formed to extend over dielectric materials 104 and 112, along the sidewalls of graphene-containing structures 116, and …
FIG. 15 is analogous to that of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A method of forming a switch, comprising: forming a first electrically conductive structure over a bottom electrode; forming a graphene structure electrically coupled with the bottom electrode and laterally spaced from the first electrically conductive structure; forming a second electrically conductive structure over the bottom electrode and on an opposing side of the graphene structure from the first electrically conductive structure; forming a top electrode over the graphene structure; the bottom electrode being electrically coupled with one of the first and second electrically conductive structures, the top electrode being electrically coupled with the other of the first and second electrically conductive structures; and wherein the first and second electrically conductive structures impart an electric field across the graphene structure.
The method of claim 21 wherein the switch is formed in an opening over the bottom electrode, and wherein the switch is the only switch formed in the opening over the bottom electrode.
The method of claim 21 wherein the switch is one of a pair of switches that are formed in a common opening over a pair of bottom electrodes.
The method of claim 21 wherein the switch is one of a plurality of switches that are formed in a common opening over a plurality of bottom electrodes. C.\ USE RS\C THOMPSON \ DESKTOP \ M02 DO CX A₂ 70226 1 340N 3 PA T-US \ AM-NEWRULES wpd
The method of claim 21 wherein the forming of the graphene structure comprises: forming seed material along the dielectric material; and epitaxially growing graphene along the seed material.
A method of forming a switch, comprising: forming first and second electrically conductive structures over a bottom electrode and laterally spaced from one another; the first electrically conductive structure directly contacting the bottom electrode, and the second electrically conductive structure not directly contacting the bottom electrode; electrically coupling a graphene structure with the bottom electrode; forming a top electrode over the graphene structure and the first and second electrically conductive structures; the top electrode being electrically coupled with the graphene structure, directly contacting the second electrically conductive structure, and not directly contacting the first electrically conductive structure; and wherein the first and second electrically conductive structures impart an electric field across the graphene structure.
The method of claim 26 wherein the first and second electrically conductive structures are formed simultaneously.
The method of claim 26 wherein the first and second electrically conductive structures are formed sequentially relative to one another. C.\ USE RS\C THOMPSON \ DESKTOP \ M02 DO CX A₂ 70226 1 34 0N 4 PA T-US \ AM-NEWRULES wpd
A method of forming switches, comprising: forming a pair of spaced apart bottom electrodes over a semiconductor substrate; forming a first dielectric material over the bottom electrodes; forming an opening extending through the first dielectric material to the bottom electrodes; forming a pair of metal-containing upwardly-extending electrically conductive structures along sidewalls of the opening, one of the upwardly-extending electrically conductive structures being directly against one of the bottom electrodes and the other of the upwardly- extending electrically conductive structures being directly against the other of the bottom electrodes; forming second dielectric material along sidewalls of the upwardly-extending electrically conductive structures, portions of the bottom electrodes being exposed after formation of the second dielectric material; forming a pair of graphene structures extending upwardly from the exposed portions of the bottom electrodes; a first of the graphene structures being electrically coupled with, and directly over, one of the bottom electrodes; a second of the graphene structures being electrically coupled with, and directly over, the other of the bottom electrodes; forming third dielectric material along sidewalls of the graphene structures; forming a pair of metal-containing downwardly-extending electrically conductive structures along the third dielectric material; forming fourth dielectric material between the downwardly-extending electrically conductive structures; and forming a pair of top electrodes over the graphene structures and the downwardly- extending electrically conductive structures; one of the top electrodes being electrically coupled with the first graphene structure and with one of the downwardly-extending electrically conductive structures, and the other of the top electrodes being electrically coupled with the second graphene structure and with the other of the downwardly-extending electrically conductive structures. C.\ USE RS\C THOMPSON \ DESKTOP \ M02 DO CX A₂ 70226 1 34 0N 5 PA T-US \ AM-NEWRULES wpd
The method of claim 29 wherein the forming of the upwardly-extending electrically conductive structures comprises: deposition of metal-containing electrically conductive material along the sidewalls of the opening and across a bottom of the opening; anistropically etching the electrically conductive material; and recessing the electrically conductive material relative to a top of the opening so that upper surfaces of the upwardly-extending electrically conductive structures are below the top of the opening.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-containing switch
Materials described outside the worked examples.
graphene
seed material
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5. Such sidewalls may merge in a location outside of the plane of the
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
maximum graphene layer thickness between nodes | ≤ 5 nm | graphene |
individual graphene layer thickness range | 1–5 nm |
Related documents with shared materials, methods, properties, or citations.
electrically conductive electrode material
monocrystalline silicon
Si
FIG. 7, electrically conductive liners 60 and 62 are formed along the sidewal ls 55 and 57. The liners 60 and 62 may comprise any suitable electrically …
FIG. 9, a graphene structure 70 is formed along a sidewall of SVG 13763662.02-09-2013.HCZDIL₆TPXXIFW3.SPEC29600798.15.352.1332.2513.1401.svg 0.23 7.203 Graph …
FIG. 11, the top electrode 18 is formed on the planarized upper surface 73. The top electrode 18 is shown comprising electrically conductive material 20. The …
voltage differential to transition switch between on and off states | 0.25 eV | graphene |
transverse electric field to achieve off state (upper bound) | ≤ 3 V/nm | graphene |
transverse electric field to achieve off state (tighter upper bound) | ≤ 2 V/nm | graphene |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 1 nm | — |
electrically conductive electrode material
monocrystalline silicon
Si
FIG. 7, electrically conductive liners 60 and 62 are formed along the sidewal ls 55 and 57. The liners 60 and 62 may comprise any suitable electrically …
FIG. 9, a graphene structure 70 is formed along a sidewall of SVG 13763662.02-09-2013.HCZDIL₆TPXXIFW3.SPEC29600798.15.352.1332.2513.1401.svg 0.23 7.203 Graph …
FIG. 11, the top electrode 18 is formed on the planarized upper surface 73. The top electrode 18 is shown comprising electrically conductive material 20. The …
voltage differential to transition switch between on and off states | 0.25 eV | graphene |
transverse electric field to achieve off state (upper bound) | ≤ 3 V/nm | graphene |
transverse electric field to achieve off state (tighter upper bound) | ≤ 2 V/nm | graphene |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 1 nm | — |
electrically conductive electrode material
monocrystalline silicon
Si
FIG. 7, electrically conductive liners 60 and 62 are formed along the sidewal ls 55 and 57. The liners 60 and 62 may comprise any suitable electrically …
FIG. 9, a graphene structure 70 is formed along a sidewall of SVG 13763662.02-09-2013.HCZDIL₆TPXXIFW3.SPEC29600798.15.352.1332.2513.1401.svg 0.23 7.203 Graph …
FIG. 11, the top electrode 18 is formed on the planarized upper surface 73. The top electrode 18 is shown comprising electrically conductive material 20. The …
voltage differential to transition switch between on and off states | 0.25 eV | graphene |
transverse electric field to achieve off state (upper bound) | ≤ 3 V/nm | graphene |
transverse electric field to achieve off state (tighter upper bound) | ≤ 2 V/nm | graphene |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 1 nm | — |
electrically conductive electrode material
monocrystalline silicon
Si
FIG. 7, electrically conductive liners 60 and 62 are formed along the sidewal ls 55 and 57. The liners 60 and 62 may comprise any suitable electrically …
FIG. 9, a graphene structure 70 is formed along a sidewall of SVG 13763662.02-09-2013.HCZDIL₆TPXXIFW3.SPEC29600798.15.352.1332.2513.1401.svg 0.23 7.203 Graph …
FIG. 11, the top electrode 18 is formed on the planarized upper surface 73. The top electrode 18 is shown comprising electrically conductive material 20. The …
voltage differential to transition switch between on and off states | 0.25 eV | graphene |
transverse electric field to achieve off state (upper bound) | ≤ 3 V/nm | graphene |
transverse electric field to achieve off state (tighter upper bound) | ≤ 2 V/nm | graphene |
Thickness | ≤ 10 nm | — |
Thickness | ≥ 1 nm | — |