Patent
US 10,000,384Patent
Atlas literature
Patent
US 10,000,384Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. At block 132, a quartz substrate is provided. A form of carbon is then provided above an upper surface of the quartz substrate at block 134. The form …
FIG. 2. Initially, a quartz substrate 140 was provided. The quartz substrate in this example was a 1 X 2 cm quartz wafer which was cleaned by ultra-sonication …
FIG. 3). The quartz wafer 146 was previously cleaned and dried in the same manner as the quartz substrate 140. The quartz substrate 140 and quartz wafer 146 …
FIG. 4. In this 20 embodiment, the photoresist layer 142 was exposed to the beam 148 at 2.8 Watt for five minutes. [0032] The focused beam 148 resulted in a …
FIG. 5. The quartz wafer 146 inhibited movement of the form of carbon 152 while allowing some gasses formed by the decomposition of the photoresist layer 142 …
FIG. 6). 10 [0033] For purpose of this example, the quartz substrate 140 and quartz wafer 146 were then moved by the high precision piezoelectric stage and a …
FIG. 7 shows an optical micrograph of a 4 x 4 laser processed area of the quartz substrate 140 with a pattern 160 of one or more graphene layers 154, with a 5 …
FIG. 8. The circle 166 corresponds to the outer boundary of the rings 162. [0037] FIG s. 9 and 10 are atomic force microscopy (AFM) images of the one or more …
FIG. 9. The circle 166 of
FIG. 10 shows that the apex area 168 is relatively flat. 5 [0039] The nature and quality of graphene dots 154 formed by laser irradiation were evaluated using …
FIG. 11 depicts Raman mapping of the ID/IG ratio of the graphene dot of
FIG. 12 depicts Raman mapping of the I 2D/IG ratio of the graphene dot of
FIG. 13 depicts the Raman spectra from the marked points in FIG s. 11 and 12; [0021]
FIG. 14 was taken after a five second exposure with the laser beam 148. A caref u l examination of the image 200 reveals a circle beginning to form slightly …
FIG. 15. The Raman spectra 204 shows a slight modification from a Raman spectra 206 which was obtained prior to exposing the quartz substrate 140, 15 …
FIG. 16 indicates the graphene domain size was increasing gradually with laser illumination time, indicating the graphene crystallization process. [0061] FIG …
FIG. 17. DETAILED DESCRIPTION [0026] For the purposes of promoting an understanding of the principles of the 10 disclosure, reference will now be made to the …
FIG. 18 reveal sheet resistance values in the range of 780 -805 Q/sq. T his value is comparable with values measured for wet-transferred graphene layers (650 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-9. Canceled
Canceled
A method of forming at least one graphene layer, comprising: providing a quartz substrate; forming a photoresist layer portion on an upper surface of the quartz substrate, the photoresist layer portion including a form of carbon; decomposing the photoresist layer portion to release the form of carbon; using the form of carbon to transfer heat to melt a portion of the quartz substrate located beneath the decomposed photoresist layer portion; and coalescing the form of carbon into at least one graphene layer on the quartz substrate. Currently amended
The method of claim 10, further comprising: trapping the released form of carbon above the upper surface of the quartz substrate. Previously presented
Canceled
A method of forming at least one graphene layer, comprising: providing a quartz substrate; forming a photoresist layer portion on an upper surface of the quartz substrate, the photoresist layer portion including a form of carbon; decomposing the photoresist layer portion to release the form of carbon; using the form of carbon to transfer heat to melt a portion of the quartz substrate located beneath the decomposed photoresist layer portion; and coalescing the form of carbon into at least one graphene layer on the quartz substrate; and diffusing the form of carbon into the melted portion to form a carbon and quartz mixture. Currently amended
The method of claim 15, further comprising: trapping the released form of carbon above the upper surface of the quartz substrate. New
A method of forming at least one graphene layer, comprising: providing a quartz substrate; forming a photoresist layer portion on an upper surface of the quartz substrate, the photoresist layer portion including a form of carbon; decomposing the photoresist layer portion to release the form of carbon; using the form of carbon to transfer heat to melt a portion of the quartz substrate located beneath the decomposed photoresist layer portion; and precipitating the form of carbon into at least one graphene layer on the quartz substrate. New
The method of claim 19, further comprising: trapping the released form of carbon above the upper surface of the quartz substrate. New
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
A 1x2 cm quartz substrate was cleaned by ultra-sonication in methanol, acetone, and DI water for 3 minutes and dried with high-purity N2. A 1:6 diluted S-1805 photoresist solution was spin-coated at 10,000 rpm to a thickness less than 100 nm on the quartz substrate, then baked at 120°C for 5 minutes. A quartz wafer was positioned above the photoresist layer. The growth chamber was pumped and purged with high-purity N₂ and maintained below 0.1 Torr. A CW Nd:YAG laser (532 nm, ~45 micron beam width) was focused through the quartz wafer onto the photoresist at 2.8 W for 5 minutes, decomposing the photoresist to release carbon. The quartz wafer inhibited dispersion of the released carbon. Upon cooling, graphene layer(s) precipitated and/or coalesced on the quartz substrate. The stage was moved to expose different areas, forming a patterned graphene dot array. Optical, AFM, and Raman characterization were performed on the resulting graphene dots.
Materials described outside the worked examples.
carbon and quartz mixture
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 96–192 nm | — |
Thickness | ≤ 1 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,000,384Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. At block 132, a quartz substrate is provided. A form of carbon is then provided above an upper surface of the quartz substrate at block 134. The form …
FIG. 2. Initially, a quartz substrate 140 was provided. The quartz substrate in this example was a 1 X 2 cm quartz wafer which was cleaned by ultra-sonication …
FIG. 3). The quartz wafer 146 was previously cleaned and dried in the same manner as the quartz substrate 140. The quartz substrate 140 and quartz wafer 146 …
FIG. 4. In this 20 embodiment, the photoresist layer 142 was exposed to the beam 148 at 2.8 Watt for five minutes. [0032] The focused beam 148 resulted in a …
FIG. 5. The quartz wafer 146 inhibited movement of the form of carbon 152 while allowing some gasses formed by the decomposition of the photoresist layer 142 …
FIG. 6). 10 [0033] For purpose of this example, the quartz substrate 140 and quartz wafer 146 were then moved by the high precision piezoelectric stage and a …
FIG. 7 shows an optical micrograph of a 4 x 4 laser processed area of the quartz substrate 140 with a pattern 160 of one or more graphene layers 154, with a 5 …
FIG. 8. The circle 166 corresponds to the outer boundary of the rings 162. [0037] FIG s. 9 and 10 are atomic force microscopy (AFM) images of the one or more …
FIG. 9. The circle 166 of
FIG. 10 shows that the apex area 168 is relatively flat. 5 [0039] The nature and quality of graphene dots 154 formed by laser irradiation were evaluated using …
FIG. 11 depicts Raman mapping of the ID/IG ratio of the graphene dot of
FIG. 12 depicts Raman mapping of the I 2D/IG ratio of the graphene dot of
FIG. 13 depicts the Raman spectra from the marked points in FIG s. 11 and 12; [0021]
FIG. 14 was taken after a five second exposure with the laser beam 148. A caref u l examination of the image 200 reveals a circle beginning to form slightly …
FIG. 15. The Raman spectra 204 shows a slight modification from a Raman spectra 206 which was obtained prior to exposing the quartz substrate 140, 15 …
FIG. 16 indicates the graphene domain size was increasing gradually with laser illumination time, indicating the graphene crystallization process. [0061] FIG …
FIG. 17. DETAILED DESCRIPTION [0026] For the purposes of promoting an understanding of the principles of the 10 disclosure, reference will now be made to the …
FIG. 18 reveal sheet resistance values in the range of 780 -805 Q/sq. T his value is comparable with values measured for wet-transferred graphene layers (650 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-9. Canceled
Canceled
A method of forming at least one graphene layer, comprising: providing a quartz substrate; forming a photoresist layer portion on an upper surface of the quartz substrate, the photoresist layer portion including a form of carbon; decomposing the photoresist layer portion to release the form of carbon; using the form of carbon to transfer heat to melt a portion of the quartz substrate located beneath the decomposed photoresist layer portion; and coalescing the form of carbon into at least one graphene layer on the quartz substrate. Currently amended
The method of claim 10, further comprising: trapping the released form of carbon above the upper surface of the quartz substrate. Previously presented
Canceled
A method of forming at least one graphene layer, comprising: providing a quartz substrate; forming a photoresist layer portion on an upper surface of the quartz substrate, the photoresist layer portion including a form of carbon; decomposing the photoresist layer portion to release the form of carbon; using the form of carbon to transfer heat to melt a portion of the quartz substrate located beneath the decomposed photoresist layer portion; and coalescing the form of carbon into at least one graphene layer on the quartz substrate; and diffusing the form of carbon into the melted portion to form a carbon and quartz mixture. Currently amended
The method of claim 15, further comprising: trapping the released form of carbon above the upper surface of the quartz substrate. New
A method of forming at least one graphene layer, comprising: providing a quartz substrate; forming a photoresist layer portion on an upper surface of the quartz substrate, the photoresist layer portion including a form of carbon; decomposing the photoresist layer portion to release the form of carbon; using the form of carbon to transfer heat to melt a portion of the quartz substrate located beneath the decomposed photoresist layer portion; and precipitating the form of carbon into at least one graphene layer on the quartz substrate. New
The method of claim 19, further comprising: trapping the released form of carbon above the upper surface of the quartz substrate. New
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
A 1x2 cm quartz substrate was cleaned by ultra-sonication in methanol, acetone, and DI water for 3 minutes and dried with high-purity N2. A 1:6 diluted S-1805 photoresist solution was spin-coated at 10,000 rpm to a thickness less than 100 nm on the quartz substrate, then baked at 120°C for 5 minutes. A quartz wafer was positioned above the photoresist layer. The growth chamber was pumped and purged with high-purity N₂ and maintained below 0.1 Torr. A CW Nd:YAG laser (532 nm, ~45 micron beam width) was focused through the quartz wafer onto the photoresist at 2.8 W for 5 minutes, decomposing the photoresist to release carbon. The quartz wafer inhibited dispersion of the released carbon. Upon cooling, graphene layer(s) precipitated and/or coalesced on the quartz substrate. The stage was moved to expose different areas, forming a patterned graphene dot array. Optical, AFM, and Raman characterization were performed on the resulting graphene dots.
Materials described outside the worked examples.
carbon and quartz mixture
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 96–192 nm | — |
Thickness | ≤ 1 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,000,384Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. At block 132, a quartz substrate is provided. A form of carbon is then provided above an upper surface of the quartz substrate at block 134. The form …
FIG. 2. Initially, a quartz substrate 140 was provided. The quartz substrate in this example was a 1 X 2 cm quartz wafer which was cleaned by ultra-sonication …
FIG. 3). The quartz wafer 146 was previously cleaned and dried in the same manner as the quartz substrate 140. The quartz substrate 140 and quartz wafer 146 …
FIG. 4. In this 20 embodiment, the photoresist layer 142 was exposed to the beam 148 at 2.8 Watt for five minutes. [0032] The focused beam 148 resulted in a …
FIG. 5. The quartz wafer 146 inhibited movement of the form of carbon 152 while allowing some gasses formed by the decomposition of the photoresist layer 142 …
FIG. 6). 10 [0033] For purpose of this example, the quartz substrate 140 and quartz wafer 146 were then moved by the high precision piezoelectric stage and a …
FIG. 7 shows an optical micrograph of a 4 x 4 laser processed area of the quartz substrate 140 with a pattern 160 of one or more graphene layers 154, with a 5 …
FIG. 8. The circle 166 corresponds to the outer boundary of the rings 162. [0037] FIG s. 9 and 10 are atomic force microscopy (AFM) images of the one or more …
FIG. 9. The circle 166 of
FIG. 10 shows that the apex area 168 is relatively flat. 5 [0039] The nature and quality of graphene dots 154 formed by laser irradiation were evaluated using …
FIG. 11 depicts Raman mapping of the ID/IG ratio of the graphene dot of
FIG. 12 depicts Raman mapping of the I 2D/IG ratio of the graphene dot of
FIG. 13 depicts the Raman spectra from the marked points in FIG s. 11 and 12; [0021]
FIG. 14 was taken after a five second exposure with the laser beam 148. A caref u l examination of the image 200 reveals a circle beginning to form slightly …
FIG. 15. The Raman spectra 204 shows a slight modification from a Raman spectra 206 which was obtained prior to exposing the quartz substrate 140, 15 …
FIG. 16 indicates the graphene domain size was increasing gradually with laser illumination time, indicating the graphene crystallization process. [0061] FIG …
FIG. 17. DETAILED DESCRIPTION [0026] For the purposes of promoting an understanding of the principles of the 10 disclosure, reference will now be made to the …
FIG. 18 reveal sheet resistance values in the range of 780 -805 Q/sq. T his value is comparable with values measured for wet-transferred graphene layers (650 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-9. Canceled
Canceled
A method of forming at least one graphene layer, comprising: providing a quartz substrate; forming a photoresist layer portion on an upper surface of the quartz substrate, the photoresist layer portion including a form of carbon; decomposing the photoresist layer portion to release the form of carbon; using the form of carbon to transfer heat to melt a portion of the quartz substrate located beneath the decomposed photoresist layer portion; and coalescing the form of carbon into at least one graphene layer on the quartz substrate. Currently amended
The method of claim 10, further comprising: trapping the released form of carbon above the upper surface of the quartz substrate. Previously presented
Canceled
A method of forming at least one graphene layer, comprising: providing a quartz substrate; forming a photoresist layer portion on an upper surface of the quartz substrate, the photoresist layer portion including a form of carbon; decomposing the photoresist layer portion to release the form of carbon; using the form of carbon to transfer heat to melt a portion of the quartz substrate located beneath the decomposed photoresist layer portion; and coalescing the form of carbon into at least one graphene layer on the quartz substrate; and diffusing the form of carbon into the melted portion to form a carbon and quartz mixture. Currently amended
The method of claim 15, further comprising: trapping the released form of carbon above the upper surface of the quartz substrate. New
A method of forming at least one graphene layer, comprising: providing a quartz substrate; forming a photoresist layer portion on an upper surface of the quartz substrate, the photoresist layer portion including a form of carbon; decomposing the photoresist layer portion to release the form of carbon; using the form of carbon to transfer heat to melt a portion of the quartz substrate located beneath the decomposed photoresist layer portion; and precipitating the form of carbon into at least one graphene layer on the quartz substrate. New
The method of claim 19, further comprising: trapping the released form of carbon above the upper surface of the quartz substrate. New
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
A 1x2 cm quartz substrate was cleaned by ultra-sonication in methanol, acetone, and DI water for 3 minutes and dried with high-purity N2. A 1:6 diluted S-1805 photoresist solution was spin-coated at 10,000 rpm to a thickness less than 100 nm on the quartz substrate, then baked at 120°C for 5 minutes. A quartz wafer was positioned above the photoresist layer. The growth chamber was pumped and purged with high-purity N₂ and maintained below 0.1 Torr. A CW Nd:YAG laser (532 nm, ~45 micron beam width) was focused through the quartz wafer onto the photoresist at 2.8 W for 5 minutes, decomposing the photoresist to release carbon. The quartz wafer inhibited dispersion of the released carbon. Upon cooling, graphene layer(s) precipitated and/or coalesced on the quartz substrate. The stage was moved to expose different areas, forming a patterned graphene dot array. Optical, AFM, and Raman characterization were performed on the resulting graphene dots.
Materials described outside the worked examples.
carbon and quartz mixture
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 96–192 nm | — |
Thickness | ≤ 1 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,000,384Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. At block 132, a quartz substrate is provided. A form of carbon is then provided above an upper surface of the quartz substrate at block 134. The form …
FIG. 2. Initially, a quartz substrate 140 was provided. The quartz substrate in this example was a 1 X 2 cm quartz wafer which was cleaned by ultra-sonication …
FIG. 3). The quartz wafer 146 was previously cleaned and dried in the same manner as the quartz substrate 140. The quartz substrate 140 and quartz wafer 146 …
FIG. 4. In this 20 embodiment, the photoresist layer 142 was exposed to the beam 148 at 2.8 Watt for five minutes. [0032] The focused beam 148 resulted in a …
FIG. 5. The quartz wafer 146 inhibited movement of the form of carbon 152 while allowing some gasses formed by the decomposition of the photoresist layer 142 …
FIG. 6). 10 [0033] For purpose of this example, the quartz substrate 140 and quartz wafer 146 were then moved by the high precision piezoelectric stage and a …
FIG. 7 shows an optical micrograph of a 4 x 4 laser processed area of the quartz substrate 140 with a pattern 160 of one or more graphene layers 154, with a 5 …
FIG. 8. The circle 166 corresponds to the outer boundary of the rings 162. [0037] FIG s. 9 and 10 are atomic force microscopy (AFM) images of the one or more …
FIG. 9. The circle 166 of
FIG. 10 shows that the apex area 168 is relatively flat. 5 [0039] The nature and quality of graphene dots 154 formed by laser irradiation were evaluated using …
FIG. 11 depicts Raman mapping of the ID/IG ratio of the graphene dot of
FIG. 12 depicts Raman mapping of the I 2D/IG ratio of the graphene dot of
FIG. 13 depicts the Raman spectra from the marked points in FIG s. 11 and 12; [0021]
FIG. 14 was taken after a five second exposure with the laser beam 148. A caref u l examination of the image 200 reveals a circle beginning to form slightly …
FIG. 15. The Raman spectra 204 shows a slight modification from a Raman spectra 206 which was obtained prior to exposing the quartz substrate 140, 15 …
FIG. 16 indicates the graphene domain size was increasing gradually with laser illumination time, indicating the graphene crystallization process. [0061] FIG …
FIG. 17. DETAILED DESCRIPTION [0026] For the purposes of promoting an understanding of the principles of the 10 disclosure, reference will now be made to the …
FIG. 18 reveal sheet resistance values in the range of 780 -805 Q/sq. T his value is comparable with values measured for wet-transferred graphene layers (650 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-9. Canceled
Canceled
A method of forming at least one graphene layer, comprising: providing a quartz substrate; forming a photoresist layer portion on an upper surface of the quartz substrate, the photoresist layer portion including a form of carbon; decomposing the photoresist layer portion to release the form of carbon; using the form of carbon to transfer heat to melt a portion of the quartz substrate located beneath the decomposed photoresist layer portion; and coalescing the form of carbon into at least one graphene layer on the quartz substrate. Currently amended
The method of claim 10, further comprising: trapping the released form of carbon above the upper surface of the quartz substrate. Previously presented
Canceled
A method of forming at least one graphene layer, comprising: providing a quartz substrate; forming a photoresist layer portion on an upper surface of the quartz substrate, the photoresist layer portion including a form of carbon; decomposing the photoresist layer portion to release the form of carbon; using the form of carbon to transfer heat to melt a portion of the quartz substrate located beneath the decomposed photoresist layer portion; and coalescing the form of carbon into at least one graphene layer on the quartz substrate; and diffusing the form of carbon into the melted portion to form a carbon and quartz mixture. Currently amended
The method of claim 15, further comprising: trapping the released form of carbon above the upper surface of the quartz substrate. New
A method of forming at least one graphene layer, comprising: providing a quartz substrate; forming a photoresist layer portion on an upper surface of the quartz substrate, the photoresist layer portion including a form of carbon; decomposing the photoresist layer portion to release the form of carbon; using the form of carbon to transfer heat to melt a portion of the quartz substrate located beneath the decomposed photoresist layer portion; and precipitating the form of carbon into at least one graphene layer on the quartz substrate. New
The method of claim 19, further comprising: trapping the released form of carbon above the upper surface of the quartz substrate. New
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
A 1x2 cm quartz substrate was cleaned by ultra-sonication in methanol, acetone, and DI water for 3 minutes and dried with high-purity N2. A 1:6 diluted S-1805 photoresist solution was spin-coated at 10,000 rpm to a thickness less than 100 nm on the quartz substrate, then baked at 120°C for 5 minutes. A quartz wafer was positioned above the photoresist layer. The growth chamber was pumped and purged with high-purity N₂ and maintained below 0.1 Torr. A CW Nd:YAG laser (532 nm, ~45 micron beam width) was focused through the quartz wafer onto the photoresist at 2.8 W for 5 minutes, decomposing the photoresist to release carbon. The quartz wafer inhibited dispersion of the released carbon. Upon cooling, graphene layer(s) precipitated and/or coalesced on the quartz substrate. The stage was moved to expose different areas, forming a patterned graphene dot array. Optical, AFM, and Raman characterization were performed on the resulting graphene dots.
Materials described outside the worked examples.
carbon and quartz mixture
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 96–192 nm | — |
Thickness | ≤ 1 nm |
Related documents with shared materials, methods, properties, or citations.
| — |
Pressure | ≤ 0.1 Torr | — |
GROWTH OF SEMICONDUCTORS ON HETERO-SUBSTRATES USING GRAPHENE AS AN INTERFACIAL LAYER
| — |
Pressure | ≤ 0.1 Torr | — |
GROWTH OF SEMICONDUCTORS ON HETERO-SUBSTRATES USING GRAPHENE AS AN INTERFACIAL LAYER
| — |
Pressure | ≤ 0.1 Torr | — |
GROWTH OF SEMICONDUCTORS ON HETERO-SUBSTRATES USING GRAPHENE AS AN INTERFACIAL LAYER
| — |
Pressure | ≤ 0.1 Torr | — |
GROWTH OF SEMICONDUCTORS ON HETERO-SUBSTRATES USING GRAPHENE AS AN INTERFACIAL LAYER
