Patent
US 12,553,121 B2MANUFACTURING METHOD OF GALLIUM NITRIDE FILM
Masanobu Ikeda
JAPAN DISPLAY INC., Tokyo (JP)·Feb. 17, 2026·US
Copyright © 2026 Matter42. All rights reserved.
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US 12,553,121 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing a configuration of a film deposition apparatus used in a method for manufac- turing a gallium nitride film according to an …
FIG. 2 is a flow chart diagram showing a method for manufacturing a gallium nitride film according to an embodiment of the present invention.
FIG. 3 is a sequence diagram showing timings of turning on or off a sputtering power supply source and a nitrogen radical supply source in a method for …
FIG. 4 is a sequence diagram showing timings of turning on or off a sputtering power supply source and a nitrogen radical supply source in a method for …
FIG. 5 is a flow chart diagram showing a method for manufacturing a gallium nitride film according to an embodiment of the present invention.
FIG. 6 is a sequence diagram showing timings of turning on or off a sputtering power supply source and a nitrogen radical supply source in a method for …
FIG. 7 is a sequence diagram showing timings of turning on or off a sputtering power supply source and a nitrogen radical supply source in a method for …
FIG. 8 is a schematic diagram showing a configuration of a light emitting element according to an embodiment of the present invention.
FIG. 9 is a schematic diagram showing a configuration of a semiconductor device according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a gallium nitride film comprising: placing a substrate so as to face a target containing nitrogen and gallium in a vacuum chamber; supplying a sputtering gas into the vacuum chamber; supplying a nitrogen radical into the vacuum chamber; generating a plasma of the sputtering gas by application of a voltage to the target; generating a gallium ion by a collision of an ion of the sputtering gas with the target; and stopping the application of the voltage to the target and stopping the supply of the nitrogen radical into the vacuum chamber to deposit gallium nitride on the substrate, wherein the gallium nitride is generated by a reaction of the gallium ion with a nitrogen anion which is generated by a reaction of an electron in the vacuum chamber with the nitrogen radical.
The method for manufacturing a gallium nitride film according to claim 1, wherein a stopping time of the application of the voltage is greater than or equal to 2 usec and less than or equal to 10 msec.
The method for manufacturing a gallium nitride film according to claim 1, wherein the target comprises gallium nitride with a composition ratio of gallium to nitrogen greater than or equal to 0.7 and less than or equal to 2.
The method for manufacturing a gallium nitride film according to claim 1, wherein the target comprises gallium nitride with a composition ratio of more gallium than nitrogen.
The method for manufacturing a gallium nitride film according to claim 1, wherein the substrate is a glass substrate.
The method for manufacturing a gallium nitride film according to claim 1, wherein the substrate is provided with an aluminum nitride film.
The method for manufacturing a gallium nitride film according to claim 1, further comprising a step of heating the substrate at a temperature greater than or equal to 400 degrees and less than 600 degrees.
A method for manufacturing a gallium nitride film comprising: placing a substrate so as to face a target containing nitrogen and gallium in a vacuum chamber; supplying a sputtering gas in the vacuum chamber; supplying a nitrogen radical in the vacuum chamber; generating a plasma of the sputtering gas by application of a voltage to the target; generating a gallium ion by a collision of an ion of the sputtering gas with the target; and stopping the application of the voltage to the target and depositing-stopping the supply of the nitrogen radical into the vacuum chamber to deposit gallium nitride on the substrate, wherein the gallium nitride is generated by a reaction of the gallium ion with a nitride anion which is generated by a reaction of a nitrogen atom generated using the sputtering gas in a metastable state in the vacuum chamber with an electron in the vacuum chamber.
The method for manufacturing a gallium nitride film according to claim 10, wherein a stopping time of the application of the voltage is greater than or equal to 2 usec and less than or equal to 10 msec.
The method for manufacturing a gallium nitride film according to claim 10, wherein the target comprises gallium nitride with a composition ratio of gallium to nitrogen greater than or equal to 0.7 and less than or equal to 2.
The method for manufacturing a gallium nitride film according to claim 10, wherein the target comprises gallium nitride with a composition ratio of more gallium than nitrogen.
The method for manufacturing a gallium nitride film according to claim 10, wherein the substrate is a glass substrate.
The method for manufacturing a gallium nitride film according to claim 10, wherein the substrate is provided with an aluminum nitride film.
The method for manufacturing a gallium nitride film according to claim 10, further comprising a step of heating the substrate at a temperature greater than or equal to 400 degrees and less than 600 degrees. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
gallium nitride film
GaN
nitrogen radical
N
Additional fabrication and treatment steps described in the patent.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
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US 12,553,121 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing a configuration of a film deposition apparatus used in a method for manufac- turing a gallium nitride film according to an …
FIG. 2 is a flow chart diagram showing a method for manufacturing a gallium nitride film according to an embodiment of the present invention.
FIG. 3 is a sequence diagram showing timings of turning on or off a sputtering power supply source and a nitrogen radical supply source in a method for …
FIG. 4 is a sequence diagram showing timings of turning on or off a sputtering power supply source and a nitrogen radical supply source in a method for …
FIG. 5 is a flow chart diagram showing a method for manufacturing a gallium nitride film according to an embodiment of the present invention.
FIG. 6 is a sequence diagram showing timings of turning on or off a sputtering power supply source and a nitrogen radical supply source in a method for …
FIG. 7 is a sequence diagram showing timings of turning on or off a sputtering power supply source and a nitrogen radical supply source in a method for …
FIG. 8 is a schematic diagram showing a configuration of a light emitting element according to an embodiment of the present invention.
FIG. 9 is a schematic diagram showing a configuration of a semiconductor device according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a gallium nitride film comprising: placing a substrate so as to face a target containing nitrogen and gallium in a vacuum chamber; supplying a sputtering gas into the vacuum chamber; supplying a nitrogen radical into the vacuum chamber; generating a plasma of the sputtering gas by application of a voltage to the target; generating a gallium ion by a collision of an ion of the sputtering gas with the target; and stopping the application of the voltage to the target and stopping the supply of the nitrogen radical into the vacuum chamber to deposit gallium nitride on the substrate, wherein the gallium nitride is generated by a reaction of the gallium ion with a nitrogen anion which is generated by a reaction of an electron in the vacuum chamber with the nitrogen radical.
The method for manufacturing a gallium nitride film according to claim 1, wherein a stopping time of the application of the voltage is greater than or equal to 2 usec and less than or equal to 10 msec.
The method for manufacturing a gallium nitride film according to claim 1, wherein the target comprises gallium nitride with a composition ratio of gallium to nitrogen greater than or equal to 0.7 and less than or equal to 2.
The method for manufacturing a gallium nitride film according to claim 1, wherein the target comprises gallium nitride with a composition ratio of more gallium than nitrogen.
The method for manufacturing a gallium nitride film according to claim 1, wherein the substrate is a glass substrate.
The method for manufacturing a gallium nitride film according to claim 1, wherein the substrate is provided with an aluminum nitride film.
The method for manufacturing a gallium nitride film according to claim 1, further comprising a step of heating the substrate at a temperature greater than or equal to 400 degrees and less than 600 degrees.
A method for manufacturing a gallium nitride film comprising: placing a substrate so as to face a target containing nitrogen and gallium in a vacuum chamber; supplying a sputtering gas in the vacuum chamber; supplying a nitrogen radical in the vacuum chamber; generating a plasma of the sputtering gas by application of a voltage to the target; generating a gallium ion by a collision of an ion of the sputtering gas with the target; and stopping the application of the voltage to the target and depositing-stopping the supply of the nitrogen radical into the vacuum chamber to deposit gallium nitride on the substrate, wherein the gallium nitride is generated by a reaction of the gallium ion with a nitride anion which is generated by a reaction of a nitrogen atom generated using the sputtering gas in a metastable state in the vacuum chamber with an electron in the vacuum chamber.
The method for manufacturing a gallium nitride film according to claim 10, wherein a stopping time of the application of the voltage is greater than or equal to 2 usec and less than or equal to 10 msec.
The method for manufacturing a gallium nitride film according to claim 10, wherein the target comprises gallium nitride with a composition ratio of gallium to nitrogen greater than or equal to 0.7 and less than or equal to 2.
The method for manufacturing a gallium nitride film according to claim 10, wherein the target comprises gallium nitride with a composition ratio of more gallium than nitrogen.
The method for manufacturing a gallium nitride film according to claim 10, wherein the substrate is a glass substrate.
The method for manufacturing a gallium nitride film according to claim 10, wherein the substrate is provided with an aluminum nitride film.
The method for manufacturing a gallium nitride film according to claim 10, further comprising a step of heating the substrate at a temperature greater than or equal to 400 degrees and less than 600 degrees. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
gallium nitride film
GaN
nitrogen radical
N
Additional fabrication and treatment steps described in the patent.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,553,121 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing a configuration of a film deposition apparatus used in a method for manufac- turing a gallium nitride film according to an …
FIG. 2 is a flow chart diagram showing a method for manufacturing a gallium nitride film according to an embodiment of the present invention.
FIG. 3 is a sequence diagram showing timings of turning on or off a sputtering power supply source and a nitrogen radical supply source in a method for …
FIG. 4 is a sequence diagram showing timings of turning on or off a sputtering power supply source and a nitrogen radical supply source in a method for …
FIG. 5 is a flow chart diagram showing a method for manufacturing a gallium nitride film according to an embodiment of the present invention.
FIG. 6 is a sequence diagram showing timings of turning on or off a sputtering power supply source and a nitrogen radical supply source in a method for …
FIG. 7 is a sequence diagram showing timings of turning on or off a sputtering power supply source and a nitrogen radical supply source in a method for …
FIG. 8 is a schematic diagram showing a configuration of a light emitting element according to an embodiment of the present invention.
FIG. 9 is a schematic diagram showing a configuration of a semiconductor device according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a gallium nitride film comprising: placing a substrate so as to face a target containing nitrogen and gallium in a vacuum chamber; supplying a sputtering gas into the vacuum chamber; supplying a nitrogen radical into the vacuum chamber; generating a plasma of the sputtering gas by application of a voltage to the target; generating a gallium ion by a collision of an ion of the sputtering gas with the target; and stopping the application of the voltage to the target and stopping the supply of the nitrogen radical into the vacuum chamber to deposit gallium nitride on the substrate, wherein the gallium nitride is generated by a reaction of the gallium ion with a nitrogen anion which is generated by a reaction of an electron in the vacuum chamber with the nitrogen radical.
The method for manufacturing a gallium nitride film according to claim 1, wherein a stopping time of the application of the voltage is greater than or equal to 2 usec and less than or equal to 10 msec.
The method for manufacturing a gallium nitride film according to claim 1, wherein the target comprises gallium nitride with a composition ratio of gallium to nitrogen greater than or equal to 0.7 and less than or equal to 2.
The method for manufacturing a gallium nitride film according to claim 1, wherein the target comprises gallium nitride with a composition ratio of more gallium than nitrogen.
The method for manufacturing a gallium nitride film according to claim 1, wherein the substrate is a glass substrate.
The method for manufacturing a gallium nitride film according to claim 1, wherein the substrate is provided with an aluminum nitride film.
The method for manufacturing a gallium nitride film according to claim 1, further comprising a step of heating the substrate at a temperature greater than or equal to 400 degrees and less than 600 degrees.
A method for manufacturing a gallium nitride film comprising: placing a substrate so as to face a target containing nitrogen and gallium in a vacuum chamber; supplying a sputtering gas in the vacuum chamber; supplying a nitrogen radical in the vacuum chamber; generating a plasma of the sputtering gas by application of a voltage to the target; generating a gallium ion by a collision of an ion of the sputtering gas with the target; and stopping the application of the voltage to the target and depositing-stopping the supply of the nitrogen radical into the vacuum chamber to deposit gallium nitride on the substrate, wherein the gallium nitride is generated by a reaction of the gallium ion with a nitride anion which is generated by a reaction of a nitrogen atom generated using the sputtering gas in a metastable state in the vacuum chamber with an electron in the vacuum chamber.
The method for manufacturing a gallium nitride film according to claim 10, wherein a stopping time of the application of the voltage is greater than or equal to 2 usec and less than or equal to 10 msec.
The method for manufacturing a gallium nitride film according to claim 10, wherein the target comprises gallium nitride with a composition ratio of gallium to nitrogen greater than or equal to 0.7 and less than or equal to 2.
The method for manufacturing a gallium nitride film according to claim 10, wherein the target comprises gallium nitride with a composition ratio of more gallium than nitrogen.
The method for manufacturing a gallium nitride film according to claim 10, wherein the substrate is a glass substrate.
The method for manufacturing a gallium nitride film according to claim 10, wherein the substrate is provided with an aluminum nitride film.
The method for manufacturing a gallium nitride film according to claim 10, further comprising a step of heating the substrate at a temperature greater than or equal to 400 degrees and less than 600 degrees. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
gallium nitride film
GaN
nitrogen radical
N
Additional fabrication and treatment steps described in the patent.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,553,121 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing a configuration of a film deposition apparatus used in a method for manufac- turing a gallium nitride film according to an …
FIG. 2 is a flow chart diagram showing a method for manufacturing a gallium nitride film according to an embodiment of the present invention.
FIG. 3 is a sequence diagram showing timings of turning on or off a sputtering power supply source and a nitrogen radical supply source in a method for …
FIG. 4 is a sequence diagram showing timings of turning on or off a sputtering power supply source and a nitrogen radical supply source in a method for …
FIG. 5 is a flow chart diagram showing a method for manufacturing a gallium nitride film according to an embodiment of the present invention.
FIG. 6 is a sequence diagram showing timings of turning on or off a sputtering power supply source and a nitrogen radical supply source in a method for …
FIG. 7 is a sequence diagram showing timings of turning on or off a sputtering power supply source and a nitrogen radical supply source in a method for …
FIG. 8 is a schematic diagram showing a configuration of a light emitting element according to an embodiment of the present invention.
FIG. 9 is a schematic diagram showing a configuration of a semiconductor device according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a gallium nitride film comprising: placing a substrate so as to face a target containing nitrogen and gallium in a vacuum chamber; supplying a sputtering gas into the vacuum chamber; supplying a nitrogen radical into the vacuum chamber; generating a plasma of the sputtering gas by application of a voltage to the target; generating a gallium ion by a collision of an ion of the sputtering gas with the target; and stopping the application of the voltage to the target and stopping the supply of the nitrogen radical into the vacuum chamber to deposit gallium nitride on the substrate, wherein the gallium nitride is generated by a reaction of the gallium ion with a nitrogen anion which is generated by a reaction of an electron in the vacuum chamber with the nitrogen radical.
The method for manufacturing a gallium nitride film according to claim 1, wherein a stopping time of the application of the voltage is greater than or equal to 2 usec and less than or equal to 10 msec.
The method for manufacturing a gallium nitride film according to claim 1, wherein the target comprises gallium nitride with a composition ratio of gallium to nitrogen greater than or equal to 0.7 and less than or equal to 2.
The method for manufacturing a gallium nitride film according to claim 1, wherein the target comprises gallium nitride with a composition ratio of more gallium than nitrogen.
The method for manufacturing a gallium nitride film according to claim 1, wherein the substrate is a glass substrate.
The method for manufacturing a gallium nitride film according to claim 1, wherein the substrate is provided with an aluminum nitride film.
The method for manufacturing a gallium nitride film according to claim 1, further comprising a step of heating the substrate at a temperature greater than or equal to 400 degrees and less than 600 degrees.
A method for manufacturing a gallium nitride film comprising: placing a substrate so as to face a target containing nitrogen and gallium in a vacuum chamber; supplying a sputtering gas in the vacuum chamber; supplying a nitrogen radical in the vacuum chamber; generating a plasma of the sputtering gas by application of a voltage to the target; generating a gallium ion by a collision of an ion of the sputtering gas with the target; and stopping the application of the voltage to the target and depositing-stopping the supply of the nitrogen radical into the vacuum chamber to deposit gallium nitride on the substrate, wherein the gallium nitride is generated by a reaction of the gallium ion with a nitride anion which is generated by a reaction of a nitrogen atom generated using the sputtering gas in a metastable state in the vacuum chamber with an electron in the vacuum chamber.
The method for manufacturing a gallium nitride film according to claim 10, wherein a stopping time of the application of the voltage is greater than or equal to 2 usec and less than or equal to 10 msec.
The method for manufacturing a gallium nitride film according to claim 10, wherein the target comprises gallium nitride with a composition ratio of gallium to nitrogen greater than or equal to 0.7 and less than or equal to 2.
The method for manufacturing a gallium nitride film according to claim 10, wherein the target comprises gallium nitride with a composition ratio of more gallium than nitrogen.
The method for manufacturing a gallium nitride film according to claim 10, wherein the substrate is a glass substrate.
The method for manufacturing a gallium nitride film according to claim 10, wherein the substrate is provided with an aluminum nitride film.
The method for manufacturing a gallium nitride film according to claim 10, further comprising a step of heating the substrate at a temperature greater than or equal to 400 degrees and less than 600 degrees. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
gallium nitride film
GaN
nitrogen radical
N
Additional fabrication and treatment steps described in the patent.
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
glass substrate
aluminum nitride film
AlN
sputtering gas
Cited non-patent literature · 2
GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE
glass substrate
aluminum nitride film
AlN
sputtering gas
Cited non-patent literature · 2
GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE
glass substrate
aluminum nitride film
AlN
sputtering gas
Cited non-patent literature · 2
GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE
glass substrate
aluminum nitride film
AlN
sputtering gas
Cited non-patent literature · 2
GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE