Patent
US 12,655,514 B2FILM FORMATION APPARATUS AND FILM FORMATION METHOD OF GALLIUM NITRIDE FILM
Masanobu Ikeda
Japan Display Inc., Tokyo (JP)·Jun. 16, 2026·US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 12,655,514 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing a configuration of a film formation apparatus according to an embodiment of the present invention.
FIG. 2 is a block diagram showing connections of a control unit of a film formation apparatus according to an embodiment of the present invention.
FIG. 3 is a flow chart showing a method for forming a gallium nitride film according to an embodiment of the present invention.
FIG. 4 is a sequence diagram showing a timing of control by a control unit in a method for forming a gallium nitride film according to an embodiment of the …
FIG. 5 is a sequence diagram showing a timing of control by a control unit in a method for forming a gallium nitride film according to an embodiment of the …
FIG. 6 is a sequence diagram showing a timing of control by a control unit in a method for forming a gallium nitride film according to an embodiment of the …
FIG. 7 is a sequence diagram showing a timing of control by a control unit in a method for forming a gallium nitride film according to an embodiment of the …
FIG. 8 is a schematic diagram showing a substrate support portion of a film formation apparatus according to an embodiment of the present invention.
FIG. 9 is a schematic diagram illustrating a measurement of a thickness of a gallium nitride film in a film formation apparatus according to an embodiment of the …
FIG. 10 is a schematic diagram showing a configuration of a light emitting element according to an embodiment of the present invention.
FIG. 11 is a schematic diagram showing a configuration of a semiconductor element according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A film formation method of a gallium nitride film, comprising: placing a substrate so as to face a target containing nitride and gallium in a vacuum chamber; heating the substrate; supplying a sputtering gas to the vacuum chamber; supplying a nitrogen radical and a hydrogen radical to the vacuum chamber; applying a voltage to the target to generate a plasma of the sputtering gas; stopping the application of the voltage to the target; stopping the supply of the nitrogen radical and the hydro-gen radical to the vacuum chamber; and supplying a chlorine radical to the vacuum chamber, wherein gallium nitride generated by a recombination reaction between the gallium sputtered from the target and the nitrogen radical, and gallium nitride generated by a recombination reaction between a gallium cation generated from the gallium of the target and a nitrogen anion generated from the nitrogen radical are deposited on the substrate, and wherein the gallium nitride film formed on the substrate is etched using the chlorine radical.
The film formation method of a gallium nitride film according to claim 1, wherein the nitrogen radical and the hydrogen radical are generated from one of an N₂/H₂ mixed gas and an NH₃ gas.
The film formation method of a gallium nitride film according to claim 1, further comprising: supplying a nitrogen gas and a hydrogen gas to the vacuum chamber after stopping the supply of the nitrogen radical and the hydrogen radical; and stopping the supply of the nitrogen gas to the vacuum chamber, then stopping the supply of the hydrogen gas to the vacuum chamber.
The film formation method of a gallium nitride film according to claim 1, wherein the chlorine radical is gener-ated from one of Cl₂ and BCl3.
The film formation method of a gallium nitride film according to claim 1, further comprising applying a voltage to the target to generate a chlorine anion after the chlorine radical is supplied to the vacuum chamber, wherein the gallium nitride film formed on the substrate is etched using the chlorine anion.
The film formation method of a gallium nitride film according to claim 1, wherein the sputtering gas is at least one of argon and krypton.
The film formation method of a gallium nitride film according to claim 1, wherein the substrate is one of a glass substrate and a quartz substrate.
The film formation method of a gallium nitride film according to claim 1, wherein the substrate is a glass substrate, and wherein the glass substrate is heated to a temperature higher than or equal to 400° C. and lower than or equal to 600° C. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
gallium nitride film
GaN
nitrogen radical
N•
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9 is a schematic diagram illustrating a measurement of a thickness of a gallium nitride film in a film formation apparatus according to an embodiment of the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
glass substrate heating temperature range | 400–600 °C | glass substrate |
Ga/N ratio in GaN target (preferred range) | 0.7–2 atomic ratio Ga/N |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
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US 12,655,514 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing a configuration of a film formation apparatus according to an embodiment of the present invention.
FIG. 2 is a block diagram showing connections of a control unit of a film formation apparatus according to an embodiment of the present invention.
FIG. 3 is a flow chart showing a method for forming a gallium nitride film according to an embodiment of the present invention.
FIG. 4 is a sequence diagram showing a timing of control by a control unit in a method for forming a gallium nitride film according to an embodiment of the …
FIG. 5 is a sequence diagram showing a timing of control by a control unit in a method for forming a gallium nitride film according to an embodiment of the …
FIG. 6 is a sequence diagram showing a timing of control by a control unit in a method for forming a gallium nitride film according to an embodiment of the …
FIG. 7 is a sequence diagram showing a timing of control by a control unit in a method for forming a gallium nitride film according to an embodiment of the …
FIG. 8 is a schematic diagram showing a substrate support portion of a film formation apparatus according to an embodiment of the present invention.
FIG. 9 is a schematic diagram illustrating a measurement of a thickness of a gallium nitride film in a film formation apparatus according to an embodiment of the …
FIG. 10 is a schematic diagram showing a configuration of a light emitting element according to an embodiment of the present invention.
FIG. 11 is a schematic diagram showing a configuration of a semiconductor element according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A film formation method of a gallium nitride film, comprising: placing a substrate so as to face a target containing nitride and gallium in a vacuum chamber; heating the substrate; supplying a sputtering gas to the vacuum chamber; supplying a nitrogen radical and a hydrogen radical to the vacuum chamber; applying a voltage to the target to generate a plasma of the sputtering gas; stopping the application of the voltage to the target; stopping the supply of the nitrogen radical and the hydro-gen radical to the vacuum chamber; and supplying a chlorine radical to the vacuum chamber, wherein gallium nitride generated by a recombination reaction between the gallium sputtered from the target and the nitrogen radical, and gallium nitride generated by a recombination reaction between a gallium cation generated from the gallium of the target and a nitrogen anion generated from the nitrogen radical are deposited on the substrate, and wherein the gallium nitride film formed on the substrate is etched using the chlorine radical.
The film formation method of a gallium nitride film according to claim 1, wherein the nitrogen radical and the hydrogen radical are generated from one of an N₂/H₂ mixed gas and an NH₃ gas.
The film formation method of a gallium nitride film according to claim 1, further comprising: supplying a nitrogen gas and a hydrogen gas to the vacuum chamber after stopping the supply of the nitrogen radical and the hydrogen radical; and stopping the supply of the nitrogen gas to the vacuum chamber, then stopping the supply of the hydrogen gas to the vacuum chamber.
The film formation method of a gallium nitride film according to claim 1, wherein the chlorine radical is gener-ated from one of Cl₂ and BCl3.
The film formation method of a gallium nitride film according to claim 1, further comprising applying a voltage to the target to generate a chlorine anion after the chlorine radical is supplied to the vacuum chamber, wherein the gallium nitride film formed on the substrate is etched using the chlorine anion.
The film formation method of a gallium nitride film according to claim 1, wherein the sputtering gas is at least one of argon and krypton.
The film formation method of a gallium nitride film according to claim 1, wherein the substrate is one of a glass substrate and a quartz substrate.
The film formation method of a gallium nitride film according to claim 1, wherein the substrate is a glass substrate, and wherein the glass substrate is heated to a temperature higher than or equal to 400° C. and lower than or equal to 600° C. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
gallium nitride film
GaN
nitrogen radical
N•
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9 is a schematic diagram illustrating a measurement of a thickness of a gallium nitride film in a film formation apparatus according to an embodiment of the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
glass substrate heating temperature range | 400–600 °C | glass substrate |
Ga/N ratio in GaN target (preferred range) | 0.7–2 atomic ratio Ga/N |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,655,514 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing a configuration of a film formation apparatus according to an embodiment of the present invention.
FIG. 2 is a block diagram showing connections of a control unit of a film formation apparatus according to an embodiment of the present invention.
FIG. 3 is a flow chart showing a method for forming a gallium nitride film according to an embodiment of the present invention.
FIG. 4 is a sequence diagram showing a timing of control by a control unit in a method for forming a gallium nitride film according to an embodiment of the …
FIG. 5 is a sequence diagram showing a timing of control by a control unit in a method for forming a gallium nitride film according to an embodiment of the …
FIG. 6 is a sequence diagram showing a timing of control by a control unit in a method for forming a gallium nitride film according to an embodiment of the …
FIG. 7 is a sequence diagram showing a timing of control by a control unit in a method for forming a gallium nitride film according to an embodiment of the …
FIG. 8 is a schematic diagram showing a substrate support portion of a film formation apparatus according to an embodiment of the present invention.
FIG. 9 is a schematic diagram illustrating a measurement of a thickness of a gallium nitride film in a film formation apparatus according to an embodiment of the …
FIG. 10 is a schematic diagram showing a configuration of a light emitting element according to an embodiment of the present invention.
FIG. 11 is a schematic diagram showing a configuration of a semiconductor element according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A film formation method of a gallium nitride film, comprising: placing a substrate so as to face a target containing nitride and gallium in a vacuum chamber; heating the substrate; supplying a sputtering gas to the vacuum chamber; supplying a nitrogen radical and a hydrogen radical to the vacuum chamber; applying a voltage to the target to generate a plasma of the sputtering gas; stopping the application of the voltage to the target; stopping the supply of the nitrogen radical and the hydro-gen radical to the vacuum chamber; and supplying a chlorine radical to the vacuum chamber, wherein gallium nitride generated by a recombination reaction between the gallium sputtered from the target and the nitrogen radical, and gallium nitride generated by a recombination reaction between a gallium cation generated from the gallium of the target and a nitrogen anion generated from the nitrogen radical are deposited on the substrate, and wherein the gallium nitride film formed on the substrate is etched using the chlorine radical.
The film formation method of a gallium nitride film according to claim 1, wherein the nitrogen radical and the hydrogen radical are generated from one of an N₂/H₂ mixed gas and an NH₃ gas.
The film formation method of a gallium nitride film according to claim 1, further comprising: supplying a nitrogen gas and a hydrogen gas to the vacuum chamber after stopping the supply of the nitrogen radical and the hydrogen radical; and stopping the supply of the nitrogen gas to the vacuum chamber, then stopping the supply of the hydrogen gas to the vacuum chamber.
The film formation method of a gallium nitride film according to claim 1, wherein the chlorine radical is gener-ated from one of Cl₂ and BCl3.
The film formation method of a gallium nitride film according to claim 1, further comprising applying a voltage to the target to generate a chlorine anion after the chlorine radical is supplied to the vacuum chamber, wherein the gallium nitride film formed on the substrate is etched using the chlorine anion.
The film formation method of a gallium nitride film according to claim 1, wherein the sputtering gas is at least one of argon and krypton.
The film formation method of a gallium nitride film according to claim 1, wherein the substrate is one of a glass substrate and a quartz substrate.
The film formation method of a gallium nitride film according to claim 1, wherein the substrate is a glass substrate, and wherein the glass substrate is heated to a temperature higher than or equal to 400° C. and lower than or equal to 600° C. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
gallium nitride film
GaN
nitrogen radical
N•
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9 is a schematic diagram illustrating a measurement of a thickness of a gallium nitride film in a film formation apparatus according to an embodiment of the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
glass substrate heating temperature range | 400–600 °C | glass substrate |
Ga/N ratio in GaN target (preferred range) | 0.7–2 atomic ratio Ga/N |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,655,514 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram showing a configuration of a film formation apparatus according to an embodiment of the present invention.
FIG. 2 is a block diagram showing connections of a control unit of a film formation apparatus according to an embodiment of the present invention.
FIG. 3 is a flow chart showing a method for forming a gallium nitride film according to an embodiment of the present invention.
FIG. 4 is a sequence diagram showing a timing of control by a control unit in a method for forming a gallium nitride film according to an embodiment of the …
FIG. 5 is a sequence diagram showing a timing of control by a control unit in a method for forming a gallium nitride film according to an embodiment of the …
FIG. 6 is a sequence diagram showing a timing of control by a control unit in a method for forming a gallium nitride film according to an embodiment of the …
FIG. 7 is a sequence diagram showing a timing of control by a control unit in a method for forming a gallium nitride film according to an embodiment of the …
FIG. 8 is a schematic diagram showing a substrate support portion of a film formation apparatus according to an embodiment of the present invention.
FIG. 9 is a schematic diagram illustrating a measurement of a thickness of a gallium nitride film in a film formation apparatus according to an embodiment of the …
FIG. 10 is a schematic diagram showing a configuration of a light emitting element according to an embodiment of the present invention.
FIG. 11 is a schematic diagram showing a configuration of a semiconductor element according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A film formation method of a gallium nitride film, comprising: placing a substrate so as to face a target containing nitride and gallium in a vacuum chamber; heating the substrate; supplying a sputtering gas to the vacuum chamber; supplying a nitrogen radical and a hydrogen radical to the vacuum chamber; applying a voltage to the target to generate a plasma of the sputtering gas; stopping the application of the voltage to the target; stopping the supply of the nitrogen radical and the hydro-gen radical to the vacuum chamber; and supplying a chlorine radical to the vacuum chamber, wherein gallium nitride generated by a recombination reaction between the gallium sputtered from the target and the nitrogen radical, and gallium nitride generated by a recombination reaction between a gallium cation generated from the gallium of the target and a nitrogen anion generated from the nitrogen radical are deposited on the substrate, and wherein the gallium nitride film formed on the substrate is etched using the chlorine radical.
The film formation method of a gallium nitride film according to claim 1, wherein the nitrogen radical and the hydrogen radical are generated from one of an N₂/H₂ mixed gas and an NH₃ gas.
The film formation method of a gallium nitride film according to claim 1, further comprising: supplying a nitrogen gas and a hydrogen gas to the vacuum chamber after stopping the supply of the nitrogen radical and the hydrogen radical; and stopping the supply of the nitrogen gas to the vacuum chamber, then stopping the supply of the hydrogen gas to the vacuum chamber.
The film formation method of a gallium nitride film according to claim 1, wherein the chlorine radical is gener-ated from one of Cl₂ and BCl3.
The film formation method of a gallium nitride film according to claim 1, further comprising applying a voltage to the target to generate a chlorine anion after the chlorine radical is supplied to the vacuum chamber, wherein the gallium nitride film formed on the substrate is etched using the chlorine anion.
The film formation method of a gallium nitride film according to claim 1, wherein the sputtering gas is at least one of argon and krypton.
The film formation method of a gallium nitride film according to claim 1, wherein the substrate is one of a glass substrate and a quartz substrate.
The film formation method of a gallium nitride film according to claim 1, wherein the substrate is a glass substrate, and wherein the glass substrate is heated to a temperature higher than or equal to 400° C. and lower than or equal to 600° C. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
gallium nitride film
GaN
nitrogen radical
N•
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 9 is a schematic diagram illustrating a measurement of a thickness of a gallium nitride film in a film formation apparatus according to an embodiment of the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
glass substrate heating temperature range | 400–600 °C | glass substrate |
Ga/N ratio in GaN target (preferred range) | 0.7–2 atomic ratio Ga/N |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
hydrogen radical
H•
chlorine radical
Cl•
N₂/H₂ mixed gas
ammonia gas
NH₃
chlorine gas
Cl₂
boron trichloride
BCl₃
argon
Ar
krypton
Kr
glass substrate
quartz substrate
yttria-based material
Cited non-patent literature · 2
MICROWAVE INTEGRATED CIRCUITS INCLUDING GALLIUM-NITRIDE DEVICES ON SILICON
hydrogen radical
H•
chlorine radical
Cl•
N₂/H₂ mixed gas
ammonia gas
NH₃
chlorine gas
Cl₂
boron trichloride
BCl₃
argon
Ar
krypton
Kr
glass substrate
quartz substrate
yttria-based material
Cited non-patent literature · 2
MICROWAVE INTEGRATED CIRCUITS INCLUDING GALLIUM-NITRIDE DEVICES ON SILICON
hydrogen radical
H•
chlorine radical
Cl•
N₂/H₂ mixed gas
ammonia gas
NH₃
chlorine gas
Cl₂
boron trichloride
BCl₃
argon
Ar
krypton
Kr
glass substrate
quartz substrate
yttria-based material
Cited non-patent literature · 2
MICROWAVE INTEGRATED CIRCUITS INCLUDING GALLIUM-NITRIDE DEVICES ON SILICON
hydrogen radical
H•
chlorine radical
Cl•
N₂/H₂ mixed gas
ammonia gas
NH₃
chlorine gas
Cl₂
boron trichloride
BCl₃
argon
Ar
krypton
Kr
glass substrate
quartz substrate
yttria-based material
Cited non-patent literature · 2
MICROWAVE INTEGRATED CIRCUITS INCLUDING GALLIUM-NITRIDE DEVICES ON SILICON