Patent
Atlas literature
Patent
US 12,218,255 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an axisymmetric schematic illustration of an exemplary vertical PN diode with a 4-zone step-etched JTE (not to scale). The JTEs were designed to …
FIG. 2A is an image of a completed vertical GaN PN diodes with a 2-zone JTE design.
FIG. 3 is a graph of reverse I-V characteristics and breakdown voltage of two PN diodes with an anode area of 0.063 mm2 and 1 mm2. The noise floor change is a …
FIG. 4B is a graph of forward I-V characteristics of the 6.0 kV diode with an anode area of 1 mm2. Insets show forward current on a semi-logarithmic scale. …
FIG. 5A is a graph of forward I-V characteristics of a 1 mm2 device under pulsed conditions. Inset shows forward current on a semi-logarithmic scale.
FIG. 6 is a graph of reverse I-V characteristics for 4-zone and 2-zone JTE designs where both had a total JTE width of 300 mm. A similar breakdown of ∼5.9 kV …
FIG. 7B is a graph showing extracted carrier con- centration of measured devices in the n-GaN drift layer. A frequency of 1 MHz was used for the CV …
FIG. 8 is a graph showing the temperature dependence of the reverse I-V characteristics of a PN junction diode with an anode area of 0.063 mm2.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A high voltage gallium nitride vertical PN diode, comprising: a high-doped n-type gallium nitride substrate or contact layer; a low-doped n-type gallium nitride drift layer epitaxially grown on the gallium nitride substrate, wherein the drift layer is greater than 10 microns in thickness and has a donor concentration of less than 2×1015/cm3; a p-type region comprising one or more p-type layers epitaxially grown on the drift layer, thereby forming a PN junction with the drift layer; an ohmic cathode contact deposited on the high-doped n-type gallium nitride substrate or contact layer; an ohmic anode contact deposited on the p-type region; and a step-etched multi-zone junction termination extension structure laterally surrounding the anode contact in the p-type region.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the low-doped n-type gallium nitride drift layer is grown by metal-organic chemical vapor deposition under compensation doping conditions.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the drift layer is equal to or greater than microns in thickness.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the area of the anode contact is greater than 0.01 mm2.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the p-type region comprises a moderately doped p-type gallium nitride layer epitaxially grown on the drift layer and a high-doped p-type gallium nitride layer epitaxially grown on the moderately doped p-type gallium nitride layer.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the step-etched multi-zone junction termi-nation extension structure comprises two or more zones.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the PN diode has an avalanche breakdown voltage of greater than 5 kV in reverse bias. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Large area (1 mm2) vertical GaN PN diode fabricated on bulk GaN substrate, demonstrating 3.5 A forward pulsed current, 8.3 mΩ-cm2 specific on-resistance, and 5.3 kV reverse breakdown. Drift region grown by MOCVD to 50 µm with carrier concentration <1×10¹⁵ cm⁻³. 4-zone step-etched JTE was used.
4 materials1 process step
Small area (0.063 mm2) vertical GaN PN diode achieving non-destructive breakdown of 6.4 kV with specific on-resistance of 10.2 mΩ-cm2 when accounting for current spreading through the drift region at a 45° angle. Positive temperature coefficient of breakdown confirmed avalanche process.
Layer stacks claimed or described, ordered top of device to substrate.
high voltage gallium nitride vertical PN diode
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph of reverse I-V characteristics and breakdown voltage of two PN diodes with an anode area of 0.063 mm2 and 1 mm2. The noise floor change is a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
forward pulsed current (large area diode, 1 mm2) | — | — |
specific on-resistance (large area diode, 1 mm2) | — | — |
reverse breakdown voltage (large area diode, 1 mm2) |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,218,255 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an axisymmetric schematic illustration of an exemplary vertical PN diode with a 4-zone step-etched JTE (not to scale). The JTEs were designed to …
FIG. 2A is an image of a completed vertical GaN PN diodes with a 2-zone JTE design.
FIG. 3 is a graph of reverse I-V characteristics and breakdown voltage of two PN diodes with an anode area of 0.063 mm2 and 1 mm2. The noise floor change is a …
FIG. 4B is a graph of forward I-V characteristics of the 6.0 kV diode with an anode area of 1 mm2. Insets show forward current on a semi-logarithmic scale. …
FIG. 5A is a graph of forward I-V characteristics of a 1 mm2 device under pulsed conditions. Inset shows forward current on a semi-logarithmic scale.
FIG. 6 is a graph of reverse I-V characteristics for 4-zone and 2-zone JTE designs where both had a total JTE width of 300 mm. A similar breakdown of ∼5.9 kV …
FIG. 7B is a graph showing extracted carrier con- centration of measured devices in the n-GaN drift layer. A frequency of 1 MHz was used for the CV …
FIG. 8 is a graph showing the temperature dependence of the reverse I-V characteristics of a PN junction diode with an anode area of 0.063 mm2.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A high voltage gallium nitride vertical PN diode, comprising: a high-doped n-type gallium nitride substrate or contact layer; a low-doped n-type gallium nitride drift layer epitaxially grown on the gallium nitride substrate, wherein the drift layer is greater than 10 microns in thickness and has a donor concentration of less than 2×1015/cm3; a p-type region comprising one or more p-type layers epitaxially grown on the drift layer, thereby forming a PN junction with the drift layer; an ohmic cathode contact deposited on the high-doped n-type gallium nitride substrate or contact layer; an ohmic anode contact deposited on the p-type region; and a step-etched multi-zone junction termination extension structure laterally surrounding the anode contact in the p-type region.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the low-doped n-type gallium nitride drift layer is grown by metal-organic chemical vapor deposition under compensation doping conditions.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the drift layer is equal to or greater than microns in thickness.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the area of the anode contact is greater than 0.01 mm2.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the p-type region comprises a moderately doped p-type gallium nitride layer epitaxially grown on the drift layer and a high-doped p-type gallium nitride layer epitaxially grown on the moderately doped p-type gallium nitride layer.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the step-etched multi-zone junction termi-nation extension structure comprises two or more zones.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the PN diode has an avalanche breakdown voltage of greater than 5 kV in reverse bias. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Large area (1 mm2) vertical GaN PN diode fabricated on bulk GaN substrate, demonstrating 3.5 A forward pulsed current, 8.3 mΩ-cm2 specific on-resistance, and 5.3 kV reverse breakdown. Drift region grown by MOCVD to 50 µm with carrier concentration <1×10¹⁵ cm⁻³. 4-zone step-etched JTE was used.
4 materials1 process step
Small area (0.063 mm2) vertical GaN PN diode achieving non-destructive breakdown of 6.4 kV with specific on-resistance of 10.2 mΩ-cm2 when accounting for current spreading through the drift region at a 45° angle. Positive temperature coefficient of breakdown confirmed avalanche process.
Layer stacks claimed or described, ordered top of device to substrate.
high voltage gallium nitride vertical PN diode
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph of reverse I-V characteristics and breakdown voltage of two PN diodes with an anode area of 0.063 mm2 and 1 mm2. The noise floor change is a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
forward pulsed current (large area diode, 1 mm2) | — | — |
specific on-resistance (large area diode, 1 mm2) | — | — |
reverse breakdown voltage (large area diode, 1 mm2) |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,218,255 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an axisymmetric schematic illustration of an exemplary vertical PN diode with a 4-zone step-etched JTE (not to scale). The JTEs were designed to …
FIG. 2A is an image of a completed vertical GaN PN diodes with a 2-zone JTE design.
FIG. 3 is a graph of reverse I-V characteristics and breakdown voltage of two PN diodes with an anode area of 0.063 mm2 and 1 mm2. The noise floor change is a …
FIG. 4B is a graph of forward I-V characteristics of the 6.0 kV diode with an anode area of 1 mm2. Insets show forward current on a semi-logarithmic scale. …
FIG. 5A is a graph of forward I-V characteristics of a 1 mm2 device under pulsed conditions. Inset shows forward current on a semi-logarithmic scale.
FIG. 6 is a graph of reverse I-V characteristics for 4-zone and 2-zone JTE designs where both had a total JTE width of 300 mm. A similar breakdown of ∼5.9 kV …
FIG. 7B is a graph showing extracted carrier con- centration of measured devices in the n-GaN drift layer. A frequency of 1 MHz was used for the CV …
FIG. 8 is a graph showing the temperature dependence of the reverse I-V characteristics of a PN junction diode with an anode area of 0.063 mm2.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A high voltage gallium nitride vertical PN diode, comprising: a high-doped n-type gallium nitride substrate or contact layer; a low-doped n-type gallium nitride drift layer epitaxially grown on the gallium nitride substrate, wherein the drift layer is greater than 10 microns in thickness and has a donor concentration of less than 2×1015/cm3; a p-type region comprising one or more p-type layers epitaxially grown on the drift layer, thereby forming a PN junction with the drift layer; an ohmic cathode contact deposited on the high-doped n-type gallium nitride substrate or contact layer; an ohmic anode contact deposited on the p-type region; and a step-etched multi-zone junction termination extension structure laterally surrounding the anode contact in the p-type region.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the low-doped n-type gallium nitride drift layer is grown by metal-organic chemical vapor deposition under compensation doping conditions.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the drift layer is equal to or greater than microns in thickness.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the area of the anode contact is greater than 0.01 mm2.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the p-type region comprises a moderately doped p-type gallium nitride layer epitaxially grown on the drift layer and a high-doped p-type gallium nitride layer epitaxially grown on the moderately doped p-type gallium nitride layer.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the step-etched multi-zone junction termi-nation extension structure comprises two or more zones.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the PN diode has an avalanche breakdown voltage of greater than 5 kV in reverse bias. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Large area (1 mm2) vertical GaN PN diode fabricated on bulk GaN substrate, demonstrating 3.5 A forward pulsed current, 8.3 mΩ-cm2 specific on-resistance, and 5.3 kV reverse breakdown. Drift region grown by MOCVD to 50 µm with carrier concentration <1×10¹⁵ cm⁻³. 4-zone step-etched JTE was used.
4 materials1 process step
Small area (0.063 mm2) vertical GaN PN diode achieving non-destructive breakdown of 6.4 kV with specific on-resistance of 10.2 mΩ-cm2 when accounting for current spreading through the drift region at a 45° angle. Positive temperature coefficient of breakdown confirmed avalanche process.
Layer stacks claimed or described, ordered top of device to substrate.
high voltage gallium nitride vertical PN diode
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph of reverse I-V characteristics and breakdown voltage of two PN diodes with an anode area of 0.063 mm2 and 1 mm2. The noise floor change is a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
forward pulsed current (large area diode, 1 mm2) | — | — |
specific on-resistance (large area diode, 1 mm2) | — | — |
reverse breakdown voltage (large area diode, 1 mm2) |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,218,255 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an axisymmetric schematic illustration of an exemplary vertical PN diode with a 4-zone step-etched JTE (not to scale). The JTEs were designed to …
FIG. 2A is an image of a completed vertical GaN PN diodes with a 2-zone JTE design.
FIG. 3 is a graph of reverse I-V characteristics and breakdown voltage of two PN diodes with an anode area of 0.063 mm2 and 1 mm2. The noise floor change is a …
FIG. 4B is a graph of forward I-V characteristics of the 6.0 kV diode with an anode area of 1 mm2. Insets show forward current on a semi-logarithmic scale. …
FIG. 5A is a graph of forward I-V characteristics of a 1 mm2 device under pulsed conditions. Inset shows forward current on a semi-logarithmic scale.
FIG. 6 is a graph of reverse I-V characteristics for 4-zone and 2-zone JTE designs where both had a total JTE width of 300 mm. A similar breakdown of ∼5.9 kV …
FIG. 7B is a graph showing extracted carrier con- centration of measured devices in the n-GaN drift layer. A frequency of 1 MHz was used for the CV …
FIG. 8 is a graph showing the temperature dependence of the reverse I-V characteristics of a PN junction diode with an anode area of 0.063 mm2.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A high voltage gallium nitride vertical PN diode, comprising: a high-doped n-type gallium nitride substrate or contact layer; a low-doped n-type gallium nitride drift layer epitaxially grown on the gallium nitride substrate, wherein the drift layer is greater than 10 microns in thickness and has a donor concentration of less than 2×1015/cm3; a p-type region comprising one or more p-type layers epitaxially grown on the drift layer, thereby forming a PN junction with the drift layer; an ohmic cathode contact deposited on the high-doped n-type gallium nitride substrate or contact layer; an ohmic anode contact deposited on the p-type region; and a step-etched multi-zone junction termination extension structure laterally surrounding the anode contact in the p-type region.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the low-doped n-type gallium nitride drift layer is grown by metal-organic chemical vapor deposition under compensation doping conditions.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the drift layer is equal to or greater than microns in thickness.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the area of the anode contact is greater than 0.01 mm2.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the p-type region comprises a moderately doped p-type gallium nitride layer epitaxially grown on the drift layer and a high-doped p-type gallium nitride layer epitaxially grown on the moderately doped p-type gallium nitride layer.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the step-etched multi-zone junction termi-nation extension structure comprises two or more zones.
The high voltage gallium nitride vertical PN diode of claim 1, wherein the PN diode has an avalanche breakdown voltage of greater than 5 kV in reverse bias. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Large area (1 mm2) vertical GaN PN diode fabricated on bulk GaN substrate, demonstrating 3.5 A forward pulsed current, 8.3 mΩ-cm2 specific on-resistance, and 5.3 kV reverse breakdown. Drift region grown by MOCVD to 50 µm with carrier concentration <1×10¹⁵ cm⁻³. 4-zone step-etched JTE was used.
4 materials1 process step
Small area (0.063 mm2) vertical GaN PN diode achieving non-destructive breakdown of 6.4 kV with specific on-resistance of 10.2 mΩ-cm2 when accounting for current spreading through the drift region at a 45° angle. Positive temperature coefficient of breakdown confirmed avalanche process.
Layer stacks claimed or described, ordered top of device to substrate.
high voltage gallium nitride vertical PN diode
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graph of reverse I-V characteristics and breakdown voltage of two PN diodes with an anode area of 0.063 mm2 and 1 mm2. The noise floor change is a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
forward pulsed current (large area diode, 1 mm2) | — | — |
specific on-resistance (large area diode, 1 mm2) | — | — |
reverse breakdown voltage (large area diode, 1 mm2) |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
FIG. 3 is a graph of reverse I-V characteristics and breakdown voltage of two PN diodes with an anode area of 0.063 mm2 and 1 mm2. The noise floor change is a …
FIG. 4B is a graph of forward I-V characteristics of the 6.0 kV diode with an anode area of 1 mm2. Insets show forward current on a semi-logarithmic scale. …
FIG. 4B is a graph of forward I-V characteristics of the 6.0 kV diode with an anode area of 1 mm2. Insets show forward current on a semi-logarithmic scale. …
FIG. 5A is a graph of forward I-V characteristics of a 1 mm2 device under pulsed conditions. Inset shows forward current on a semi-logarithmic scale.
FIG. 5A is a graph of forward I-V characteristics of a 1 mm2 device under pulsed conditions. Inset shows forward current on a semi-logarithmic scale.
FIG. 6 is a graph of reverse I-V characteristics for 4-zone and 2-zone JTE designs where both had a total JTE width of 300 mm. A similar breakdown of ∼5.9 kV …
FIG. 6 is a graph of reverse I-V characteristics for 4-zone and 2-zone JTE designs where both had a total JTE width of 300 mm. A similar breakdown of ∼5.9 kV …
FIG. 7B is a graph showing extracted carrier con- centration of measured devices in the n-GaN drift layer. A frequency of 1 MHz was used for the CV …
FIG. 8 is a graph showing the temperature dependence of the reverse I-V characteristics of a PN junction diode with an anode area of 0.063 mm2.
FIG. 8 is a graph showing the temperature dependence of the reverse I-V characteristics of a PN junction diode with an anode area of 0.063 mm2.
| — |
| — |
specific on-resistance (small area diode, 0.063 mm2) | — | — |
non-destructive breakdown voltage (small area diode, 0.063 mm2) | — | — |
Thickness | 200–300 µm | — |
Thickness | ≤ 0.3 nm | — |
Thickness | ≤ 1000000000000000 cm | — |
Thickness | ≤ 10000000000000000000 cm | — |
Thickness | ≥ 10 µm | — |
Thickness | ≥ 50 µm | — |
Thickness | ≥ 0.01 mm | — |
Thickness | ≥ 0.1 mm | — |
Thickness | ≥ 10000000000000000000 cm | — |
Cited non-patent literature · 2
FIG. 3 is a graph of reverse I-V characteristics and breakdown voltage of two PN diodes with an anode area of 0.063 mm2 and 1 mm2. The noise floor change is a …
FIG. 4B is a graph of forward I-V characteristics of the 6.0 kV diode with an anode area of 1 mm2. Insets show forward current on a semi-logarithmic scale. …
FIG. 4B is a graph of forward I-V characteristics of the 6.0 kV diode with an anode area of 1 mm2. Insets show forward current on a semi-logarithmic scale. …
FIG. 5A is a graph of forward I-V characteristics of a 1 mm2 device under pulsed conditions. Inset shows forward current on a semi-logarithmic scale.
FIG. 5A is a graph of forward I-V characteristics of a 1 mm2 device under pulsed conditions. Inset shows forward current on a semi-logarithmic scale.
FIG. 6 is a graph of reverse I-V characteristics for 4-zone and 2-zone JTE designs where both had a total JTE width of 300 mm. A similar breakdown of ∼5.9 kV …
FIG. 6 is a graph of reverse I-V characteristics for 4-zone and 2-zone JTE designs where both had a total JTE width of 300 mm. A similar breakdown of ∼5.9 kV …
FIG. 7B is a graph showing extracted carrier con- centration of measured devices in the n-GaN drift layer. A frequency of 1 MHz was used for the CV …
FIG. 8 is a graph showing the temperature dependence of the reverse I-V characteristics of a PN junction diode with an anode area of 0.063 mm2.
FIG. 8 is a graph showing the temperature dependence of the reverse I-V characteristics of a PN junction diode with an anode area of 0.063 mm2.
| — |
| — |
specific on-resistance (small area diode, 0.063 mm2) | — | — |
non-destructive breakdown voltage (small area diode, 0.063 mm2) | — | — |
Thickness | 200–300 µm | — |
Thickness | ≤ 0.3 nm | — |
Thickness | ≤ 1000000000000000 cm | — |
Thickness | ≤ 10000000000000000000 cm | — |
Thickness | ≥ 10 µm | — |
Thickness | ≥ 50 µm | — |
Thickness | ≥ 0.01 mm | — |
Thickness | ≥ 0.1 mm | — |
Thickness | ≥ 10000000000000000000 cm | — |
Cited non-patent literature · 2
FIG. 3 is a graph of reverse I-V characteristics and breakdown voltage of two PN diodes with an anode area of 0.063 mm2 and 1 mm2. The noise floor change is a …
FIG. 4B is a graph of forward I-V characteristics of the 6.0 kV diode with an anode area of 1 mm2. Insets show forward current on a semi-logarithmic scale. …
FIG. 4B is a graph of forward I-V characteristics of the 6.0 kV diode with an anode area of 1 mm2. Insets show forward current on a semi-logarithmic scale. …
FIG. 5A is a graph of forward I-V characteristics of a 1 mm2 device under pulsed conditions. Inset shows forward current on a semi-logarithmic scale.
FIG. 5A is a graph of forward I-V characteristics of a 1 mm2 device under pulsed conditions. Inset shows forward current on a semi-logarithmic scale.
FIG. 6 is a graph of reverse I-V characteristics for 4-zone and 2-zone JTE designs where both had a total JTE width of 300 mm. A similar breakdown of ∼5.9 kV …
FIG. 6 is a graph of reverse I-V characteristics for 4-zone and 2-zone JTE designs where both had a total JTE width of 300 mm. A similar breakdown of ∼5.9 kV …
FIG. 7B is a graph showing extracted carrier con- centration of measured devices in the n-GaN drift layer. A frequency of 1 MHz was used for the CV …
FIG. 8 is a graph showing the temperature dependence of the reverse I-V characteristics of a PN junction diode with an anode area of 0.063 mm2.
FIG. 8 is a graph showing the temperature dependence of the reverse I-V characteristics of a PN junction diode with an anode area of 0.063 mm2.
| — |
| — |
specific on-resistance (small area diode, 0.063 mm2) | — | — |
non-destructive breakdown voltage (small area diode, 0.063 mm2) | — | — |
Thickness | 200–300 µm | — |
Thickness | ≤ 0.3 nm | — |
Thickness | ≤ 1000000000000000 cm | — |
Thickness | ≤ 10000000000000000000 cm | — |
Thickness | ≥ 10 µm | — |
Thickness | ≥ 50 µm | — |
Thickness | ≥ 0.01 mm | — |
Thickness | ≥ 0.1 mm | — |
Thickness | ≥ 10000000000000000000 cm | — |
Cited non-patent literature · 2
FIG. 3 is a graph of reverse I-V characteristics and breakdown voltage of two PN diodes with an anode area of 0.063 mm2 and 1 mm2. The noise floor change is a …
FIG. 4B is a graph of forward I-V characteristics of the 6.0 kV diode with an anode area of 1 mm2. Insets show forward current on a semi-logarithmic scale. …
FIG. 4B is a graph of forward I-V characteristics of the 6.0 kV diode with an anode area of 1 mm2. Insets show forward current on a semi-logarithmic scale. …
FIG. 5A is a graph of forward I-V characteristics of a 1 mm2 device under pulsed conditions. Inset shows forward current on a semi-logarithmic scale.
FIG. 5A is a graph of forward I-V characteristics of a 1 mm2 device under pulsed conditions. Inset shows forward current on a semi-logarithmic scale.
FIG. 6 is a graph of reverse I-V characteristics for 4-zone and 2-zone JTE designs where both had a total JTE width of 300 mm. A similar breakdown of ∼5.9 kV …
FIG. 6 is a graph of reverse I-V characteristics for 4-zone and 2-zone JTE designs where both had a total JTE width of 300 mm. A similar breakdown of ∼5.9 kV …
FIG. 7B is a graph showing extracted carrier con- centration of measured devices in the n-GaN drift layer. A frequency of 1 MHz was used for the CV …
FIG. 8 is a graph showing the temperature dependence of the reverse I-V characteristics of a PN junction diode with an anode area of 0.063 mm2.
FIG. 8 is a graph showing the temperature dependence of the reverse I-V characteristics of a PN junction diode with an anode area of 0.063 mm2.
| — |
| — |
specific on-resistance (small area diode, 0.063 mm2) | — | — |
non-destructive breakdown voltage (small area diode, 0.063 mm2) | — | — |
Thickness | 200–300 µm | — |
Thickness | ≤ 0.3 nm | — |
Thickness | ≤ 1000000000000000 cm | — |
Thickness | ≤ 10000000000000000000 cm | — |
Thickness | ≥ 10 µm | — |
Thickness | ≥ 50 µm | — |
Thickness | ≥ 0.01 mm | — |
Thickness | ≥ 0.1 mm | — |
Thickness | ≥ 10000000000000000000 cm | — |
Cited non-patent literature · 2
