Patent
US 11,831,303 B2HIGH ACCURACY CURRENT SENSING FOR GAN POWER SWITCHING DEVICES
Xuechao Liu, Ruoyu Hou
GAN SYSTEMS INC., Ottawa (CA)·Nov. 28, 2023·US
Copyright © 2026 Matter42. All rights reserved.
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US 11,831,303 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a circuit schematic for a quasi-resonant (QR) flyback power converter comprising a discrete GaN power transistor and a shunt resistor for current …
FIG. 2 shows a photograph of a reference design example 35 comprising a 65 W QR flyback power converter comprising a discrete GaN power transistor and shunt …
FIG. 3 shows a circuit schematic for a QR flyback power converter comprising a power transistor having an integrated sense transistor which acts as a current …
FIG. 4A shows a circuit schematic comprising a SenseFET comprising a power transistor and a sense tran- sistor, and a sense resistor Rcs and
FIG. 5 shows an example of output characteristics for a 650V 150Ωm GaN transistor;
FIG. 6 is a schematic that illustrates that for current sensing with a SenseFET comprising GaN transistors, dif- 55 ferent gate-to-source voltages for the …
FIG. 7B shows plots of the drain current Id at junction temperatures Tj of 25° C. and 125° C., and a plot of the accuracy as a function of the value of the …
FIG. 8 shows a simplified circuit schematic of a high accuracy current sensing circuit comprising a GaN power transistor and a GaN sense transistor (SenseGaN) …
FIG. 9 shows a schematic functional block diagram of a high accuracy current sensing circuit comprising a GaN power transistor and a GaN sense transistor …
FIG. 10 shows a circuit schematic of a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, and a sampling circuit …
FIG. 11 shows an example circuit design schematic for a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, and a …
FIGS. 12A and 12B show waveforms for the drain source current Id, and sense voltages Vsense at the output of the first stage and current sense Vcs at the output …
FIG. 13B shows plots of the drain current Id at junction temperatures Tj of 25° C. and 125° C. and accuracy as a function of the value of the current sense …
FIG. 14 shows a high current circuit design schematic for a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, …
FIGS. 15A and 15B show waveforms for the drain-source current Id, sense voltage Vsense, and current sense voltage Vcs at the output of the sampling circuit, …
FIG. 35 4C, there is a voltage drop on the sensing resistor Rcs (static), represented by Ics·Rcs, and a voltage drop on the parasitic inductance (dynamic), …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A current sensing circuit for a power switching device comprising: a GaN power transistor and a GaN sense transistor, each having a drain, a source and a gate; and a sampling circuit; the sampling circuit having first and second inputs and an output; the GaN sense transistor being configured as a current mirror with the drain of the GaN power transistor being connected to the drain of the GaN sense transistor, the gate of the GaN power transistor being connected to the gate of the GaN sense transistor, the source of the GaN sense transistor being connected to the first input of the sampling circuit to provide a current sense input Ics to the sampling circuit, and the source of the GaN sense transistor and the second input of the sampling circuit being connected to a Kelvin source of the GaN power transistor, whereby the gate-to-source voltage of the GaN sense transistor and the gate-to-source voltage of the GaN power transistor are substantially the same; the sampling circuit being configured to convert the current sense input Ics to a first sense voltage Vsense and to amplify the first sense voltage Vsense to provide a 10 second sense voltage Vcs at the output of the sampling circuit.
The current sensing circuit of claim 1, wherein the sampling circuit comprises a first stage and a second stage, the first stage being a current to voltage converter which receives the current Ics from the GaN sense transistor and outputs the first sense voltage Vsense; and the second stage being a voltage amplifier which receives the sense voltage Vsense and outputs the second sense voltage Vcs=n*Vsense.
The current sensing circuit of claim 1, wherein the sampling circuit comprises first and second stage operational amplifiers, the first stage operational amplifier being configured as a current to voltage converter with a feedback resistor Rcs, wherein its inverting input receives the current Ics from the GaN sense transistor and its non-inverting input is connected to the Kelvin source, to provide the first sense voltage Vsense at a first stage output; the second stage operational amplifier being configured as a voltage amplifier with an amplification ratio n which receives the sense voltage Vsense at its inverting input, and its non-inverting input is connected to the Kelvin source, to provide the second sense voltage Vcs=n*Vsense at a second stage output.
The current sensing circuit of claim 1, wherein the sense GaN transistor and the power GaN transistor are monolithically integrated.
The current sensing circuit of claim 1, wherein the sense GaN transistor is discrete from the power GaN tran-sistor.
The current sensing circuit of claim 1, wherein the output of the sampling circuit is connected to the current sense input of a controller/gate driver for driving the gates of the sense GaN transistor and the power GaN transistor, to feed the second sense voltage Vcs to the controller for implementing any one of current monitoring and feedback, overcurrent protection and short circuit protection.
The current sensing circuit of claim 1 providing a current accuracy of better than 1%, which is substantially independent of junction temperature over a range of 25° C. to 125° C.
A flyback converter comprising the current sensing circuit of claim 1.
A switch mode power supply comprising the current sensing circuit claim 1. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
current sensing circuit for GaN power switching device
Materials described outside the worked examples.
GaN (power transistor)
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 shows a circuit schematic for a quasi-resonant (QR) flyback power converter comprising a discrete GaN power transistor and a shunt resistor for current …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
current sensing accuracy | <1% % | — |
Temperature | 25–100 °C | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 12
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,831,303 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a circuit schematic for a quasi-resonant (QR) flyback power converter comprising a discrete GaN power transistor and a shunt resistor for current …
FIG. 2 shows a photograph of a reference design example 35 comprising a 65 W QR flyback power converter comprising a discrete GaN power transistor and shunt …
FIG. 3 shows a circuit schematic for a QR flyback power converter comprising a power transistor having an integrated sense transistor which acts as a current …
FIG. 4A shows a circuit schematic comprising a SenseFET comprising a power transistor and a sense tran- sistor, and a sense resistor Rcs and
FIG. 5 shows an example of output characteristics for a 650V 150Ωm GaN transistor;
FIG. 6 is a schematic that illustrates that for current sensing with a SenseFET comprising GaN transistors, dif- 55 ferent gate-to-source voltages for the …
FIG. 7B shows plots of the drain current Id at junction temperatures Tj of 25° C. and 125° C., and a plot of the accuracy as a function of the value of the …
FIG. 8 shows a simplified circuit schematic of a high accuracy current sensing circuit comprising a GaN power transistor and a GaN sense transistor (SenseGaN) …
FIG. 9 shows a schematic functional block diagram of a high accuracy current sensing circuit comprising a GaN power transistor and a GaN sense transistor …
FIG. 10 shows a circuit schematic of a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, and a sampling circuit …
FIG. 11 shows an example circuit design schematic for a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, and a …
FIGS. 12A and 12B show waveforms for the drain source current Id, and sense voltages Vsense at the output of the first stage and current sense Vcs at the output …
FIG. 13B shows plots of the drain current Id at junction temperatures Tj of 25° C. and 125° C. and accuracy as a function of the value of the current sense …
FIG. 14 shows a high current circuit design schematic for a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, …
FIGS. 15A and 15B show waveforms for the drain-source current Id, sense voltage Vsense, and current sense voltage Vcs at the output of the sampling circuit, …
FIG. 35 4C, there is a voltage drop on the sensing resistor Rcs (static), represented by Ics·Rcs, and a voltage drop on the parasitic inductance (dynamic), …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A current sensing circuit for a power switching device comprising: a GaN power transistor and a GaN sense transistor, each having a drain, a source and a gate; and a sampling circuit; the sampling circuit having first and second inputs and an output; the GaN sense transistor being configured as a current mirror with the drain of the GaN power transistor being connected to the drain of the GaN sense transistor, the gate of the GaN power transistor being connected to the gate of the GaN sense transistor, the source of the GaN sense transistor being connected to the first input of the sampling circuit to provide a current sense input Ics to the sampling circuit, and the source of the GaN sense transistor and the second input of the sampling circuit being connected to a Kelvin source of the GaN power transistor, whereby the gate-to-source voltage of the GaN sense transistor and the gate-to-source voltage of the GaN power transistor are substantially the same; the sampling circuit being configured to convert the current sense input Ics to a first sense voltage Vsense and to amplify the first sense voltage Vsense to provide a 10 second sense voltage Vcs at the output of the sampling circuit.
The current sensing circuit of claim 1, wherein the sampling circuit comprises a first stage and a second stage, the first stage being a current to voltage converter which receives the current Ics from the GaN sense transistor and outputs the first sense voltage Vsense; and the second stage being a voltage amplifier which receives the sense voltage Vsense and outputs the second sense voltage Vcs=n*Vsense.
The current sensing circuit of claim 1, wherein the sampling circuit comprises first and second stage operational amplifiers, the first stage operational amplifier being configured as a current to voltage converter with a feedback resistor Rcs, wherein its inverting input receives the current Ics from the GaN sense transistor and its non-inverting input is connected to the Kelvin source, to provide the first sense voltage Vsense at a first stage output; the second stage operational amplifier being configured as a voltage amplifier with an amplification ratio n which receives the sense voltage Vsense at its inverting input, and its non-inverting input is connected to the Kelvin source, to provide the second sense voltage Vcs=n*Vsense at a second stage output.
The current sensing circuit of claim 1, wherein the sense GaN transistor and the power GaN transistor are monolithically integrated.
The current sensing circuit of claim 1, wherein the sense GaN transistor is discrete from the power GaN tran-sistor.
The current sensing circuit of claim 1, wherein the output of the sampling circuit is connected to the current sense input of a controller/gate driver for driving the gates of the sense GaN transistor and the power GaN transistor, to feed the second sense voltage Vcs to the controller for implementing any one of current monitoring and feedback, overcurrent protection and short circuit protection.
The current sensing circuit of claim 1 providing a current accuracy of better than 1%, which is substantially independent of junction temperature over a range of 25° C. to 125° C.
A flyback converter comprising the current sensing circuit of claim 1.
A switch mode power supply comprising the current sensing circuit claim 1. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
current sensing circuit for GaN power switching device
Materials described outside the worked examples.
GaN (power transistor)
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 shows a circuit schematic for a quasi-resonant (QR) flyback power converter comprising a discrete GaN power transistor and a shunt resistor for current …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
current sensing accuracy | <1% % | — |
Temperature | 25–100 °C | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 12
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,831,303 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a circuit schematic for a quasi-resonant (QR) flyback power converter comprising a discrete GaN power transistor and a shunt resistor for current …
FIG. 2 shows a photograph of a reference design example 35 comprising a 65 W QR flyback power converter comprising a discrete GaN power transistor and shunt …
FIG. 3 shows a circuit schematic for a QR flyback power converter comprising a power transistor having an integrated sense transistor which acts as a current …
FIG. 4A shows a circuit schematic comprising a SenseFET comprising a power transistor and a sense tran- sistor, and a sense resistor Rcs and
FIG. 5 shows an example of output characteristics for a 650V 150Ωm GaN transistor;
FIG. 6 is a schematic that illustrates that for current sensing with a SenseFET comprising GaN transistors, dif- 55 ferent gate-to-source voltages for the …
FIG. 7B shows plots of the drain current Id at junction temperatures Tj of 25° C. and 125° C., and a plot of the accuracy as a function of the value of the …
FIG. 8 shows a simplified circuit schematic of a high accuracy current sensing circuit comprising a GaN power transistor and a GaN sense transistor (SenseGaN) …
FIG. 9 shows a schematic functional block diagram of a high accuracy current sensing circuit comprising a GaN power transistor and a GaN sense transistor …
FIG. 10 shows a circuit schematic of a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, and a sampling circuit …
FIG. 11 shows an example circuit design schematic for a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, and a …
FIGS. 12A and 12B show waveforms for the drain source current Id, and sense voltages Vsense at the output of the first stage and current sense Vcs at the output …
FIG. 13B shows plots of the drain current Id at junction temperatures Tj of 25° C. and 125° C. and accuracy as a function of the value of the current sense …
FIG. 14 shows a high current circuit design schematic for a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, …
FIGS. 15A and 15B show waveforms for the drain-source current Id, sense voltage Vsense, and current sense voltage Vcs at the output of the sampling circuit, …
FIG. 35 4C, there is a voltage drop on the sensing resistor Rcs (static), represented by Ics·Rcs, and a voltage drop on the parasitic inductance (dynamic), …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A current sensing circuit for a power switching device comprising: a GaN power transistor and a GaN sense transistor, each having a drain, a source and a gate; and a sampling circuit; the sampling circuit having first and second inputs and an output; the GaN sense transistor being configured as a current mirror with the drain of the GaN power transistor being connected to the drain of the GaN sense transistor, the gate of the GaN power transistor being connected to the gate of the GaN sense transistor, the source of the GaN sense transistor being connected to the first input of the sampling circuit to provide a current sense input Ics to the sampling circuit, and the source of the GaN sense transistor and the second input of the sampling circuit being connected to a Kelvin source of the GaN power transistor, whereby the gate-to-source voltage of the GaN sense transistor and the gate-to-source voltage of the GaN power transistor are substantially the same; the sampling circuit being configured to convert the current sense input Ics to a first sense voltage Vsense and to amplify the first sense voltage Vsense to provide a 10 second sense voltage Vcs at the output of the sampling circuit.
The current sensing circuit of claim 1, wherein the sampling circuit comprises a first stage and a second stage, the first stage being a current to voltage converter which receives the current Ics from the GaN sense transistor and outputs the first sense voltage Vsense; and the second stage being a voltage amplifier which receives the sense voltage Vsense and outputs the second sense voltage Vcs=n*Vsense.
The current sensing circuit of claim 1, wherein the sampling circuit comprises first and second stage operational amplifiers, the first stage operational amplifier being configured as a current to voltage converter with a feedback resistor Rcs, wherein its inverting input receives the current Ics from the GaN sense transistor and its non-inverting input is connected to the Kelvin source, to provide the first sense voltage Vsense at a first stage output; the second stage operational amplifier being configured as a voltage amplifier with an amplification ratio n which receives the sense voltage Vsense at its inverting input, and its non-inverting input is connected to the Kelvin source, to provide the second sense voltage Vcs=n*Vsense at a second stage output.
The current sensing circuit of claim 1, wherein the sense GaN transistor and the power GaN transistor are monolithically integrated.
The current sensing circuit of claim 1, wherein the sense GaN transistor is discrete from the power GaN tran-sistor.
The current sensing circuit of claim 1, wherein the output of the sampling circuit is connected to the current sense input of a controller/gate driver for driving the gates of the sense GaN transistor and the power GaN transistor, to feed the second sense voltage Vcs to the controller for implementing any one of current monitoring and feedback, overcurrent protection and short circuit protection.
The current sensing circuit of claim 1 providing a current accuracy of better than 1%, which is substantially independent of junction temperature over a range of 25° C. to 125° C.
A flyback converter comprising the current sensing circuit of claim 1.
A switch mode power supply comprising the current sensing circuit claim 1. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
current sensing circuit for GaN power switching device
Materials described outside the worked examples.
GaN (power transistor)
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 shows a circuit schematic for a quasi-resonant (QR) flyback power converter comprising a discrete GaN power transistor and a shunt resistor for current …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
current sensing accuracy | <1% % | — |
Temperature | 25–100 °C | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 12
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,831,303 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a circuit schematic for a quasi-resonant (QR) flyback power converter comprising a discrete GaN power transistor and a shunt resistor for current …
FIG. 2 shows a photograph of a reference design example 35 comprising a 65 W QR flyback power converter comprising a discrete GaN power transistor and shunt …
FIG. 3 shows a circuit schematic for a QR flyback power converter comprising a power transistor having an integrated sense transistor which acts as a current …
FIG. 4A shows a circuit schematic comprising a SenseFET comprising a power transistor and a sense tran- sistor, and a sense resistor Rcs and
FIG. 5 shows an example of output characteristics for a 650V 150Ωm GaN transistor;
FIG. 6 is a schematic that illustrates that for current sensing with a SenseFET comprising GaN transistors, dif- 55 ferent gate-to-source voltages for the …
FIG. 7B shows plots of the drain current Id at junction temperatures Tj of 25° C. and 125° C., and a plot of the accuracy as a function of the value of the …
FIG. 8 shows a simplified circuit schematic of a high accuracy current sensing circuit comprising a GaN power transistor and a GaN sense transistor (SenseGaN) …
FIG. 9 shows a schematic functional block diagram of a high accuracy current sensing circuit comprising a GaN power transistor and a GaN sense transistor …
FIG. 10 shows a circuit schematic of a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, and a sampling circuit …
FIG. 11 shows an example circuit design schematic for a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, and a …
FIGS. 12A and 12B show waveforms for the drain source current Id, and sense voltages Vsense at the output of the first stage and current sense Vcs at the output …
FIG. 13B shows plots of the drain current Id at junction temperatures Tj of 25° C. and 125° C. and accuracy as a function of the value of the current sense …
FIG. 14 shows a high current circuit design schematic for a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, …
FIGS. 15A and 15B show waveforms for the drain-source current Id, sense voltage Vsense, and current sense voltage Vcs at the output of the sampling circuit, …
FIG. 35 4C, there is a voltage drop on the sensing resistor Rcs (static), represented by Ics·Rcs, and a voltage drop on the parasitic inductance (dynamic), …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A current sensing circuit for a power switching device comprising: a GaN power transistor and a GaN sense transistor, each having a drain, a source and a gate; and a sampling circuit; the sampling circuit having first and second inputs and an output; the GaN sense transistor being configured as a current mirror with the drain of the GaN power transistor being connected to the drain of the GaN sense transistor, the gate of the GaN power transistor being connected to the gate of the GaN sense transistor, the source of the GaN sense transistor being connected to the first input of the sampling circuit to provide a current sense input Ics to the sampling circuit, and the source of the GaN sense transistor and the second input of the sampling circuit being connected to a Kelvin source of the GaN power transistor, whereby the gate-to-source voltage of the GaN sense transistor and the gate-to-source voltage of the GaN power transistor are substantially the same; the sampling circuit being configured to convert the current sense input Ics to a first sense voltage Vsense and to amplify the first sense voltage Vsense to provide a 10 second sense voltage Vcs at the output of the sampling circuit.
The current sensing circuit of claim 1, wherein the sampling circuit comprises a first stage and a second stage, the first stage being a current to voltage converter which receives the current Ics from the GaN sense transistor and outputs the first sense voltage Vsense; and the second stage being a voltage amplifier which receives the sense voltage Vsense and outputs the second sense voltage Vcs=n*Vsense.
The current sensing circuit of claim 1, wherein the sampling circuit comprises first and second stage operational amplifiers, the first stage operational amplifier being configured as a current to voltage converter with a feedback resistor Rcs, wherein its inverting input receives the current Ics from the GaN sense transistor and its non-inverting input is connected to the Kelvin source, to provide the first sense voltage Vsense at a first stage output; the second stage operational amplifier being configured as a voltage amplifier with an amplification ratio n which receives the sense voltage Vsense at its inverting input, and its non-inverting input is connected to the Kelvin source, to provide the second sense voltage Vcs=n*Vsense at a second stage output.
The current sensing circuit of claim 1, wherein the sense GaN transistor and the power GaN transistor are monolithically integrated.
The current sensing circuit of claim 1, wherein the sense GaN transistor is discrete from the power GaN tran-sistor.
The current sensing circuit of claim 1, wherein the output of the sampling circuit is connected to the current sense input of a controller/gate driver for driving the gates of the sense GaN transistor and the power GaN transistor, to feed the second sense voltage Vcs to the controller for implementing any one of current monitoring and feedback, overcurrent protection and short circuit protection.
The current sensing circuit of claim 1 providing a current accuracy of better than 1%, which is substantially independent of junction temperature over a range of 25° C. to 125° C.
A flyback converter comprising the current sensing circuit of claim 1.
A switch mode power supply comprising the current sensing circuit claim 1. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
current sensing circuit for GaN power switching device
Materials described outside the worked examples.
GaN (power transistor)
GaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 shows a circuit schematic for a quasi-resonant (QR) flyback power converter comprising a discrete GaN power transistor and a shunt resistor for current …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
current sensing accuracy | <1% % | — |
Temperature | 25–100 °C | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 12
Related documents with shared materials, methods, properties, or citations.
FIG. 2 shows a photograph of a reference design example 35 comprising a 65 W QR flyback power converter comprising a discrete GaN power transistor and shunt …
FIG. 3 shows a circuit schematic for a QR flyback power converter comprising a power transistor having an integrated sense transistor which acts as a current …
FIG. 4A shows a circuit schematic comprising a SenseFET comprising a power transistor and a sense tran- sistor, and a sense resistor Rcs and
FIG. 5 shows an example of output characteristics for a 650V 150Ωm GaN transistor;
FIG. 6 is a schematic that illustrates that for current sensing with a SenseFET comprising GaN transistors, dif- 55 ferent gate-to-source voltages for the …
FIG. 7B shows plots of the drain current Id at junction temperatures Tj of 25° C. and 125° C., and a plot of the accuracy as a function of the value of the …
FIG. 8 shows a simplified circuit schematic of a high accuracy current sensing circuit comprising a GaN power transistor and a GaN sense transistor (SenseGaN) …
FIG. 9 shows a schematic functional block diagram of a high accuracy current sensing circuit comprising a GaN power transistor and a GaN sense transistor …
FIG. 10 shows a circuit schematic of a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, and a sampling circuit …
FIG. 11 shows an example circuit design schematic for a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, and a …
FIGS. 12A and 12B show waveforms for the drain source current Id, and sense voltages Vsense at the output of the first stage and current sense Vcs at the output …
FIG. 13B shows plots of the drain current Id at junction temperatures Tj of 25° C. and 125° C. and accuracy as a function of the value of the current sense …
FIG. 14 shows a high current circuit design schematic for a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, …
FIGS. 15A and 15B show waveforms for the drain-source current Id, sense voltage Vsense, and current sense voltage Vcs at the output of the sampling circuit, …
— |
| ≤ 1 W |
| — |
Temperature | 25–125 °C | — |
Cited non-patent literature · 3
FIG. 2 shows a photograph of a reference design example 35 comprising a 65 W QR flyback power converter comprising a discrete GaN power transistor and shunt …
FIG. 3 shows a circuit schematic for a QR flyback power converter comprising a power transistor having an integrated sense transistor which acts as a current …
FIG. 4A shows a circuit schematic comprising a SenseFET comprising a power transistor and a sense tran- sistor, and a sense resistor Rcs and
FIG. 5 shows an example of output characteristics for a 650V 150Ωm GaN transistor;
FIG. 6 is a schematic that illustrates that for current sensing with a SenseFET comprising GaN transistors, dif- 55 ferent gate-to-source voltages for the …
FIG. 7B shows plots of the drain current Id at junction temperatures Tj of 25° C. and 125° C., and a plot of the accuracy as a function of the value of the …
FIG. 8 shows a simplified circuit schematic of a high accuracy current sensing circuit comprising a GaN power transistor and a GaN sense transistor (SenseGaN) …
FIG. 9 shows a schematic functional block diagram of a high accuracy current sensing circuit comprising a GaN power transistor and a GaN sense transistor …
FIG. 10 shows a circuit schematic of a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, and a sampling circuit …
FIG. 11 shows an example circuit design schematic for a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, and a …
FIGS. 12A and 12B show waveforms for the drain source current Id, and sense voltages Vsense at the output of the first stage and current sense Vcs at the output …
FIG. 13B shows plots of the drain current Id at junction temperatures Tj of 25° C. and 125° C. and accuracy as a function of the value of the current sense …
FIG. 14 shows a high current circuit design schematic for a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, …
FIGS. 15A and 15B show waveforms for the drain-source current Id, sense voltage Vsense, and current sense voltage Vcs at the output of the sampling circuit, …
— |
| ≤ 1 W |
| — |
Temperature | 25–125 °C | — |
Cited non-patent literature · 3
FIG. 2 shows a photograph of a reference design example 35 comprising a 65 W QR flyback power converter comprising a discrete GaN power transistor and shunt …
FIG. 3 shows a circuit schematic for a QR flyback power converter comprising a power transistor having an integrated sense transistor which acts as a current …
FIG. 4A shows a circuit schematic comprising a SenseFET comprising a power transistor and a sense tran- sistor, and a sense resistor Rcs and
FIG. 5 shows an example of output characteristics for a 650V 150Ωm GaN transistor;
FIG. 6 is a schematic that illustrates that for current sensing with a SenseFET comprising GaN transistors, dif- 55 ferent gate-to-source voltages for the …
FIG. 7B shows plots of the drain current Id at junction temperatures Tj of 25° C. and 125° C., and a plot of the accuracy as a function of the value of the …
FIG. 8 shows a simplified circuit schematic of a high accuracy current sensing circuit comprising a GaN power transistor and a GaN sense transistor (SenseGaN) …
FIG. 9 shows a schematic functional block diagram of a high accuracy current sensing circuit comprising a GaN power transistor and a GaN sense transistor …
FIG. 10 shows a circuit schematic of a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, and a sampling circuit …
FIG. 11 shows an example circuit design schematic for a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, and a …
FIGS. 12A and 12B show waveforms for the drain source current Id, and sense voltages Vsense at the output of the first stage and current sense Vcs at the output …
FIG. 13B shows plots of the drain current Id at junction temperatures Tj of 25° C. and 125° C. and accuracy as a function of the value of the current sense …
FIG. 14 shows a high current circuit design schematic for a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, …
FIGS. 15A and 15B show waveforms for the drain-source current Id, sense voltage Vsense, and current sense voltage Vcs at the output of the sampling circuit, …
— |
| ≤ 1 W |
| — |
Temperature | 25–125 °C | — |
Cited non-patent literature · 3
FIG. 2 shows a photograph of a reference design example 35 comprising a 65 W QR flyback power converter comprising a discrete GaN power transistor and shunt …
FIG. 3 shows a circuit schematic for a QR flyback power converter comprising a power transistor having an integrated sense transistor which acts as a current …
FIG. 4A shows a circuit schematic comprising a SenseFET comprising a power transistor and a sense tran- sistor, and a sense resistor Rcs and
FIG. 5 shows an example of output characteristics for a 650V 150Ωm GaN transistor;
FIG. 6 is a schematic that illustrates that for current sensing with a SenseFET comprising GaN transistors, dif- 55 ferent gate-to-source voltages for the …
FIG. 7B shows plots of the drain current Id at junction temperatures Tj of 25° C. and 125° C., and a plot of the accuracy as a function of the value of the …
FIG. 8 shows a simplified circuit schematic of a high accuracy current sensing circuit comprising a GaN power transistor and a GaN sense transistor (SenseGaN) …
FIG. 9 shows a schematic functional block diagram of a high accuracy current sensing circuit comprising a GaN power transistor and a GaN sense transistor …
FIG. 10 shows a circuit schematic of a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, and a sampling circuit …
FIG. 11 shows an example circuit design schematic for a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, and a …
FIGS. 12A and 12B show waveforms for the drain source current Id, and sense voltages Vsense at the output of the first stage and current sense Vcs at the output …
FIG. 13B shows plots of the drain current Id at junction temperatures Tj of 25° C. and 125° C. and accuracy as a function of the value of the current sense …
FIG. 14 shows a high current circuit design schematic for a high accuracy current sensing circuit comprising a GaN power transistor, a GaN sense transistor, …
FIGS. 15A and 15B show waveforms for the drain-source current Id, sense voltage Vsense, and current sense voltage Vcs at the output of the sampling circuit, …
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| ≤ 1 W |
| — |
Temperature | 25–125 °C | — |
Cited non-patent literature · 3