Patent
US 9,012,882GRAPHENE NANOMESH AND METHOD OF MAKING THE SAME
Xiangfeng Duan
US
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Atlas literature
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US 9,012,882Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic illustration of graphene nanomesh 10. The graphene nanomesh 10 includes a sheet 12 of graphene having a plurality of apertures …
FIG. 2. After the etching process drills into the underneath SiO x layer, this leaves a SiO x nanomesh mask on top of the graphene layer. AFM images of the SiO …
FIG. 3B illustrates a scanning electron microscopy (SEM) image of the microporous structure of PS matrix with hexagonally arranged apertures formed by the …
FIG. 4H. The average neck width is 9.3 nm with a standard deviation of 1.3 nm. As seen above, as the average neck width decreases, the standard deviation also …
FIG. 5 C illustrates a histogram of the graphene nanomesh 10 neck width corresponding to the graphene nanomesh 10 illustrated in
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 7. [0063] In operation, a gate voltage (V) is applied to the back gate 64 and the conductance (p S) of the graphene nanomesh 10 will change in response to …
FIG. 8 illustrates an exemplary fabrication process to obtain a top-gated transistor 80. A silicon substrate 82 is provided having a SiO₂ layer 84 formed 15 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
0-474-3 AMENDMENTS TO THE CLAIMS: This listing of claims will replace all prior versions, and listings, of claims in the Application.
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanomesh field-effect transistor (FET)
graphene nanomesh FET-type sensor
Materials described outside the worked examples.
graphene
C
graphene nanomesh
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. After the etching process drills into the underneath SiO x layer, this leaves a SiO x nanomesh mask on top of the graphene layer. AFM images of the SiO …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
on-off ratio tunable by neck width | — | graphene nanomesh |
aperture periodicity | ≤ 50 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,012,882Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic illustration of graphene nanomesh 10. The graphene nanomesh 10 includes a sheet 12 of graphene having a plurality of apertures …
FIG. 2. After the etching process drills into the underneath SiO x layer, this leaves a SiO x nanomesh mask on top of the graphene layer. AFM images of the SiO …
FIG. 3B illustrates a scanning electron microscopy (SEM) image of the microporous structure of PS matrix with hexagonally arranged apertures formed by the …
FIG. 4H. The average neck width is 9.3 nm with a standard deviation of 1.3 nm. As seen above, as the average neck width decreases, the standard deviation also …
FIG. 5 C illustrates a histogram of the graphene nanomesh 10 neck width corresponding to the graphene nanomesh 10 illustrated in
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 7. [0063] In operation, a gate voltage (V) is applied to the back gate 64 and the conductance (p S) of the graphene nanomesh 10 will change in response to …
FIG. 8 illustrates an exemplary fabrication process to obtain a top-gated transistor 80. A silicon substrate 82 is provided having a SiO₂ layer 84 formed 15 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
0-474-3 AMENDMENTS TO THE CLAIMS: This listing of claims will replace all prior versions, and listings, of claims in the Application.
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanomesh field-effect transistor (FET)
graphene nanomesh FET-type sensor
Materials described outside the worked examples.
graphene
C
graphene nanomesh
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. After the etching process drills into the underneath SiO x layer, this leaves a SiO x nanomesh mask on top of the graphene layer. AFM images of the SiO …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
on-off ratio tunable by neck width | — | graphene nanomesh |
aperture periodicity | ≤ 50 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,012,882Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic illustration of graphene nanomesh 10. The graphene nanomesh 10 includes a sheet 12 of graphene having a plurality of apertures …
FIG. 2. After the etching process drills into the underneath SiO x layer, this leaves a SiO x nanomesh mask on top of the graphene layer. AFM images of the SiO …
FIG. 3B illustrates a scanning electron microscopy (SEM) image of the microporous structure of PS matrix with hexagonally arranged apertures formed by the …
FIG. 4H. The average neck width is 9.3 nm with a standard deviation of 1.3 nm. As seen above, as the average neck width decreases, the standard deviation also …
FIG. 5 C illustrates a histogram of the graphene nanomesh 10 neck width corresponding to the graphene nanomesh 10 illustrated in
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 7. [0063] In operation, a gate voltage (V) is applied to the back gate 64 and the conductance (p S) of the graphene nanomesh 10 will change in response to …
FIG. 8 illustrates an exemplary fabrication process to obtain a top-gated transistor 80. A silicon substrate 82 is provided having a SiO₂ layer 84 formed 15 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
0-474-3 AMENDMENTS TO THE CLAIMS: This listing of claims will replace all prior versions, and listings, of claims in the Application.
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanomesh field-effect transistor (FET)
graphene nanomesh FET-type sensor
Materials described outside the worked examples.
graphene
C
graphene nanomesh
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. After the etching process drills into the underneath SiO x layer, this leaves a SiO x nanomesh mask on top of the graphene layer. AFM images of the SiO …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
on-off ratio tunable by neck width | — | graphene nanomesh |
aperture periodicity | ≤ 50 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,012,882Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic illustration of graphene nanomesh 10. The graphene nanomesh 10 includes a sheet 12 of graphene having a plurality of apertures …
FIG. 2. After the etching process drills into the underneath SiO x layer, this leaves a SiO x nanomesh mask on top of the graphene layer. AFM images of the SiO …
FIG. 3B illustrates a scanning electron microscopy (SEM) image of the microporous structure of PS matrix with hexagonally arranged apertures formed by the …
FIG. 4H. The average neck width is 9.3 nm with a standard deviation of 1.3 nm. As seen above, as the average neck width decreases, the standard deviation also …
FIG. 5 C illustrates a histogram of the graphene nanomesh 10 neck width corresponding to the graphene nanomesh 10 illustrated in
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 7. [0063] In operation, a gate voltage (V) is applied to the back gate 64 and the conductance (p S) of the graphene nanomesh 10 will change in response to …
FIG. 8 illustrates an exemplary fabrication process to obtain a top-gated transistor 80. A silicon substrate 82 is provided having a SiO₂ layer 84 formed 15 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
0-474-3 AMENDMENTS TO THE CLAIMS: This listing of claims will replace all prior versions, and listings, of claims in the Application.
Layer stacks claimed or described, ordered top of device to substrate.
graphene nanomesh field-effect transistor (FET)
graphene nanomesh FET-type sensor
Materials described outside the worked examples.
graphene
C
graphene nanomesh
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2. After the etching process drills into the underneath SiO x layer, this leaves a SiO x nanomesh mask on top of the graphene layer. AFM images of the SiO …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
on-off ratio tunable by neck width | — | graphene nanomesh |
aperture periodicity | ≤ 50 nm |
Related documents with shared materials, methods, properties, or citations.
poly(styrene-block-methyl methacrylate)
SiOx
hydrofluoric acid
HF
FIG. 3B illustrates a scanning electron microscopy (SEM) image of the microporous structure of PS matrix with hexagonally arranged apertures formed by the …
FIG. 3B illustrates a scanning electron microscopy (SEM) image of the microporous structure of PS matrix with hexagonally arranged apertures formed by the …
FIG. 3B illustrates a scanning electron microscopy (SEM) image of the microporous structure of PS matrix with hexagonally arranged apertures formed by the …
FIG. 4H. The average neck width is 9.3 nm with a standard deviation of 1.3 nm. As seen above, as the average neck width decreases, the standard deviation also …
FIG. 4H. The average neck width is 9.3 nm with a standard deviation of 1.3 nm. As seen above, as the average neck width decreases, the standard deviation also …
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 7. [0063] In operation, a gate voltage (V) is applied to the back gate 64 and the conductance (p S) of the graphene nanomesh 10 will change in response to …
FIG. 8 illustrates an exemplary fabrication process to obtain a top-gated transistor 80. A silicon substrate 82 is provided having a SiO₂ layer 84 formed 15 …
aperture neck width | ≤ 30 nm | graphene nanomesh |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 12 nm | — |
poly(styrene-block-methyl methacrylate)
SiOx
hydrofluoric acid
HF
FIG. 3B illustrates a scanning electron microscopy (SEM) image of the microporous structure of PS matrix with hexagonally arranged apertures formed by the …
FIG. 3B illustrates a scanning electron microscopy (SEM) image of the microporous structure of PS matrix with hexagonally arranged apertures formed by the …
FIG. 3B illustrates a scanning electron microscopy (SEM) image of the microporous structure of PS matrix with hexagonally arranged apertures formed by the …
FIG. 4H. The average neck width is 9.3 nm with a standard deviation of 1.3 nm. As seen above, as the average neck width decreases, the standard deviation also …
FIG. 4H. The average neck width is 9.3 nm with a standard deviation of 1.3 nm. As seen above, as the average neck width decreases, the standard deviation also …
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 7. [0063] In operation, a gate voltage (V) is applied to the back gate 64 and the conductance (p S) of the graphene nanomesh 10 will change in response to …
FIG. 8 illustrates an exemplary fabrication process to obtain a top-gated transistor 80. A silicon substrate 82 is provided having a SiO₂ layer 84 formed 15 …
aperture neck width | ≤ 30 nm | graphene nanomesh |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 12 nm | — |
poly(styrene-block-methyl methacrylate)
SiOx
hydrofluoric acid
HF
FIG. 3B illustrates a scanning electron microscopy (SEM) image of the microporous structure of PS matrix with hexagonally arranged apertures formed by the …
FIG. 3B illustrates a scanning electron microscopy (SEM) image of the microporous structure of PS matrix with hexagonally arranged apertures formed by the …
FIG. 3B illustrates a scanning electron microscopy (SEM) image of the microporous structure of PS matrix with hexagonally arranged apertures formed by the …
FIG. 4H. The average neck width is 9.3 nm with a standard deviation of 1.3 nm. As seen above, as the average neck width decreases, the standard deviation also …
FIG. 4H. The average neck width is 9.3 nm with a standard deviation of 1.3 nm. As seen above, as the average neck width decreases, the standard deviation also …
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 7. [0063] In operation, a gate voltage (V) is applied to the back gate 64 and the conductance (p S) of the graphene nanomesh 10 will change in response to …
FIG. 8 illustrates an exemplary fabrication process to obtain a top-gated transistor 80. A silicon substrate 82 is provided having a SiO₂ layer 84 formed 15 …
aperture neck width | ≤ 30 nm | graphene nanomesh |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 12 nm | — |
poly(styrene-block-methyl methacrylate)
SiOx
hydrofluoric acid
HF
FIG. 3B illustrates a scanning electron microscopy (SEM) image of the microporous structure of PS matrix with hexagonally arranged apertures formed by the …
FIG. 3B illustrates a scanning electron microscopy (SEM) image of the microporous structure of PS matrix with hexagonally arranged apertures formed by the …
FIG. 3B illustrates a scanning electron microscopy (SEM) image of the microporous structure of PS matrix with hexagonally arranged apertures formed by the …
FIG. 4H. The average neck width is 9.3 nm with a standard deviation of 1.3 nm. As seen above, as the average neck width decreases, the standard deviation also …
FIG. 4H. The average neck width is 9.3 nm with a standard deviation of 1.3 nm. As seen above, as the average neck width decreases, the standard deviation also …
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 6E. This observation is consistent with GNR devices where the conduction band gap and on-off ratio is inversely proportional to the width of the critical …
FIG. 7. [0063] In operation, a gate voltage (V) is applied to the back gate 64 and the conductance (p S) of the graphene nanomesh 10 will change in response to …
FIG. 8 illustrates an exemplary fabrication process to obtain a top-gated transistor 80. A silicon substrate 82 is provided having a SiO₂ layer 84 formed 15 …
aperture neck width | ≤ 30 nm | graphene nanomesh |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 5 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 15 nm | — |
Thickness | ≤ 12 nm | — |