Patent
US 9,352,968graphene sheets with defect pores |
minimum elevated temperature for reduction/graphitization | 700 °C | graphene sheets with defect pores |
Voltage | 2–2 V | — |
Thickness | 10–20 nm | — |
Temperature | ≤ 20 °C | — |
Temperature | ≤ 50 °C | — |
Thickness | 1–50 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 30 nm | — |
Thickness | ≥ 500 nm | — |
Duration | ≥ 3 hours | — |
Temperature | ≥ 700 °C | — |
graphene sheets with defect pores |
minimum elevated temperature for reduction/graphitization | 700 °C | graphene sheets with defect pores |
Voltage | 2–2 V | — |
Thickness | 10–20 nm | — |
Temperature | ≤ 20 °C | — |
Temperature | ≤ 50 °C | — |
Thickness | 1–50 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 30 nm | — |
Thickness | ≥ 500 nm | — |
Duration | ≥ 3 hours | — |
Temperature | ≥ 700 °C | — |
graphene sheets with defect pores |
minimum elevated temperature for reduction/graphitization | 700 °C | graphene sheets with defect pores |
Voltage | 2–2 V | — |
Thickness | 10–20 nm | — |
Temperature | ≤ 20 °C | — |
Temperature | ≤ 50 °C | — |
Thickness | 1–50 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 30 nm | — |
Thickness | ≥ 500 nm | — |
Duration | ≥ 3 hours | — |
Temperature | ≥ 700 °C | — |
graphene sheets with defect pores |
minimum elevated temperature for reduction/graphitization | 700 °C | graphene sheets with defect pores |
Voltage | 2–2 V | — |
Thickness | 10–20 nm | — |
Temperature | ≤ 20 °C | — |
Temperature | ≤ 50 °C | — |
Thickness | 1–50 nm | — |
Thickness | ≥ 1 nm | — |
Thickness | ≥ 50 nm | — |
Thickness | ≥ 30 nm | — |
Thickness | ≥ 500 nm | — |
Duration | ≥ 3 hours | — |
Temperature | ≥ 700 °C | — |