Patent
US 10,770,556FLUORINATED GRAPHENE PASSIVATED ALGAN/GAN-BASED HEMT DEVICE AND MANUFACTURING METHOD
XINHONG CHENG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,770,556Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, then step 6) S 1 6 is performed, i.e., an isolating layer is deposited on a surface of the device. As an example, a SiO 2 thin film is deposited by …
FIG. 2, firstly step 1) S i1 is performed, i.e., a substrate 101 is provided and a GaN layer 103 and an A l GaN layer 104 are sequentially formed on a surface …
FIG. 3, then step 2) S 1 2 is performed, i.e., a source ohmic contact and a drain ohmic contact are formed on the A l GaN layer 104. Specifically, firstly a …
FIG. 4, then step 3) S 1 3 is performed, i.e., graphene is formed on a surface of the A l GaN layer 104 and fluorination treatment is performed to the graphene …
FIG. 5, this invention further provides a method for manufacturing A l GaN/GaN HEMT based on fluorinated graphene passivation, and the method comprises the …
FIG. 6, the transfer characteristics of a non-graphene passivated MIS HEMT are compared with that of the HEMT provided by the present invention, and it is …
FIG. 7. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An AlGaN/GaN H EMT based on fluorinated graphene passivation, characterized in that the H EMT comprises: a substrate; a GaN layer located above the substrate; an AlGaN layer bonded to the GaN layer, a two-dimensional electron gas surface formed by an interface between the AlGaN layer and the GaN layer; a source and a drain formed at two ends of the A l GaN layer; an insulated graphene passivation layer bonded to a surface of the AlGaN layer, wherein the insulated graphene passivation la y er is fluorinated; a gate dielectric layer bonded to a surface of the insulated graphene passivation layer; and a gate metal layer bonded to a surface of the gate dielectric layer. Currently amended
The AlGaN/GaN H EMT based on fluorinated graphene passivation according to claim 1, characterized in that a buffer layer is provided between the substrate and the GaN layer. Original
The AlGaN/GaN H EMT based on fluorinated graphene passivation according to claim 1, characterized in that the substrate comprises a silicon substrate in a (111) crystal orientation. Original
The AlGaN/GaN H EMT based on fluorinated graphene passivation according to claim 1, characterized in that the gate dielectric layer is a high-k dielectric layer. Original
(Withdrawn-currently amended) A method for manufacturing A l GaN/GaN H EMT based on fluorinated graphene passivation of claim 1, characterized in that the method comprises the following steps: 1) providing a substrate and sequentially forming a GaN layer and an AlGaN layer on a surface of the substrate, an interface between the GaN layer and the A l GaN layer forming a two- dimensional electron gas surface; 2) forming a source ohmic contact and a drain ohmic contact on the A l GaN layer; 3) covering a surface of the AlGaN layer with graphene and performing fluorination treatment to the graphene to form an insulated graphene passivation layer; and 4) forming a gate dielectric layer on a surface of the insulated graphene passivation layer and forming a gate metal layer on a surface of the gate dielectric layer. Currently amended
(Withdrawn-currently amended) The manufacturing method for the AlGaN/GaN H EMT based on fluorinated graphene passivation of claim 1 according to claim 6, characterized in that the method further comprises the following steps: 5) performing mesa isolation to a device region; 6) depositing an isolating layer on a surface of the device; 7) etching windows corresponding to the source ohmic contact, the drain ohmic contact and the gate metal layer in the isolating layer; and 8) manufacturing metal extraction electrodes based on each window. Currently amended
(Withdrawn-currently amended) The manufacturing method for the AlGaN/GaN H EMT based on fluorinated graphene passivation of claim 1 according to claim 6, characterized in that step 1) further comprises a step of forming a buffer layer between the substrate and the GaN layer. Currently amended
(Withdrawn-currently amended) The manufacturing method for the AlGaN/GaN H EMT based on fluorinated graphene passivation of claim 1 according to claim 6, characterized in that method for covering the surface of the AlGaN layer with graphene in step 3) is selected from: a. growing graphene on a Cu substrate and then transferring the graphene grown on the Cu substrate to the surface of the A l GaN layer; or b. directly growing graphene on the surface of the Al GaN layer. Currently amended
(Withdrawn-currently amended) The manufacturing on fluorinated graphene passivation of claim 1 of performing fluorination treatment to the graphene graphene by using SF₆ plasmas, treatment time
(Withdrawn-currently amended) The manufacturing on fluorinated graphene passivation of claim 1 gate dielectric layer is a high-k gate dielectric layer. method for the AlGaN/GaN H EMT based according to claim 6, characterized in that step 3) comprises the following step: treating the being 60-120s. Currently amended method for the AlGaN/GaN H EMT based according to claim 6, characterized in that the Currently amended
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials2 process steps
AlGaN/GaN HEMT device with fluorinated graphene passivation layer. Buffer layer thickness of 3.9 µm. Silicon substrate in (111) orientation. Graphene transferred to AlGaN surface, fluorinated using SF₆ plasma (60-120 s). High-k dielectric (Al₂O₃ or HfO₂) grown on fluorinated graphene layer. Gate metal layer deposited on gate dielectric. Mesa isolation, isolating layer deposition, window etching, and metal electrode extraction steps performed.
Layer stacks claimed or described, ordered top of device to substrate.
AlGaN/GaN MIS-HEMT with fluorinated graphene passivation
Materials described outside the worked examples.
Cu substrate
Cu
SF₆ plasma
SF₆
Al₂O₃
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, then step 6) S 1 6 is performed, i.e., an isolating layer is deposited on a surface of the device. As an example, a SiO 2 thin film is deposited by …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
buffer layer thickness (described embodiment) | 3.9 µm | buffer layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,770,556Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, then step 6) S 1 6 is performed, i.e., an isolating layer is deposited on a surface of the device. As an example, a SiO 2 thin film is deposited by …
FIG. 2, firstly step 1) S i1 is performed, i.e., a substrate 101 is provided and a GaN layer 103 and an A l GaN layer 104 are sequentially formed on a surface …
FIG. 3, then step 2) S 1 2 is performed, i.e., a source ohmic contact and a drain ohmic contact are formed on the A l GaN layer 104. Specifically, firstly a …
FIG. 4, then step 3) S 1 3 is performed, i.e., graphene is formed on a surface of the A l GaN layer 104 and fluorination treatment is performed to the graphene …
FIG. 5, this invention further provides a method for manufacturing A l GaN/GaN HEMT based on fluorinated graphene passivation, and the method comprises the …
FIG. 6, the transfer characteristics of a non-graphene passivated MIS HEMT are compared with that of the HEMT provided by the present invention, and it is …
FIG. 7. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An AlGaN/GaN H EMT based on fluorinated graphene passivation, characterized in that the H EMT comprises: a substrate; a GaN layer located above the substrate; an AlGaN layer bonded to the GaN layer, a two-dimensional electron gas surface formed by an interface between the AlGaN layer and the GaN layer; a source and a drain formed at two ends of the A l GaN layer; an insulated graphene passivation layer bonded to a surface of the AlGaN layer, wherein the insulated graphene passivation la y er is fluorinated; a gate dielectric layer bonded to a surface of the insulated graphene passivation layer; and a gate metal layer bonded to a surface of the gate dielectric layer. Currently amended
The AlGaN/GaN H EMT based on fluorinated graphene passivation according to claim 1, characterized in that a buffer layer is provided between the substrate and the GaN layer. Original
The AlGaN/GaN H EMT based on fluorinated graphene passivation according to claim 1, characterized in that the substrate comprises a silicon substrate in a (111) crystal orientation. Original
The AlGaN/GaN H EMT based on fluorinated graphene passivation according to claim 1, characterized in that the gate dielectric layer is a high-k dielectric layer. Original
(Withdrawn-currently amended) A method for manufacturing A l GaN/GaN H EMT based on fluorinated graphene passivation of claim 1, characterized in that the method comprises the following steps: 1) providing a substrate and sequentially forming a GaN layer and an AlGaN layer on a surface of the substrate, an interface between the GaN layer and the A l GaN layer forming a two- dimensional electron gas surface; 2) forming a source ohmic contact and a drain ohmic contact on the A l GaN layer; 3) covering a surface of the AlGaN layer with graphene and performing fluorination treatment to the graphene to form an insulated graphene passivation layer; and 4) forming a gate dielectric layer on a surface of the insulated graphene passivation layer and forming a gate metal layer on a surface of the gate dielectric layer. Currently amended
(Withdrawn-currently amended) The manufacturing method for the AlGaN/GaN H EMT based on fluorinated graphene passivation of claim 1 according to claim 6, characterized in that the method further comprises the following steps: 5) performing mesa isolation to a device region; 6) depositing an isolating layer on a surface of the device; 7) etching windows corresponding to the source ohmic contact, the drain ohmic contact and the gate metal layer in the isolating layer; and 8) manufacturing metal extraction electrodes based on each window. Currently amended
(Withdrawn-currently amended) The manufacturing method for the AlGaN/GaN H EMT based on fluorinated graphene passivation of claim 1 according to claim 6, characterized in that step 1) further comprises a step of forming a buffer layer between the substrate and the GaN layer. Currently amended
(Withdrawn-currently amended) The manufacturing method for the AlGaN/GaN H EMT based on fluorinated graphene passivation of claim 1 according to claim 6, characterized in that method for covering the surface of the AlGaN layer with graphene in step 3) is selected from: a. growing graphene on a Cu substrate and then transferring the graphene grown on the Cu substrate to the surface of the A l GaN layer; or b. directly growing graphene on the surface of the Al GaN layer. Currently amended
(Withdrawn-currently amended) The manufacturing on fluorinated graphene passivation of claim 1 of performing fluorination treatment to the graphene graphene by using SF₆ plasmas, treatment time
(Withdrawn-currently amended) The manufacturing on fluorinated graphene passivation of claim 1 gate dielectric layer is a high-k gate dielectric layer. method for the AlGaN/GaN H EMT based according to claim 6, characterized in that step 3) comprises the following step: treating the being 60-120s. Currently amended method for the AlGaN/GaN H EMT based according to claim 6, characterized in that the Currently amended
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials2 process steps
AlGaN/GaN HEMT device with fluorinated graphene passivation layer. Buffer layer thickness of 3.9 µm. Silicon substrate in (111) orientation. Graphene transferred to AlGaN surface, fluorinated using SF₆ plasma (60-120 s). High-k dielectric (Al₂O₃ or HfO₂) grown on fluorinated graphene layer. Gate metal layer deposited on gate dielectric. Mesa isolation, isolating layer deposition, window etching, and metal electrode extraction steps performed.
Layer stacks claimed or described, ordered top of device to substrate.
AlGaN/GaN MIS-HEMT with fluorinated graphene passivation
Materials described outside the worked examples.
Cu substrate
Cu
SF₆ plasma
SF₆
Al₂O₃
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, then step 6) S 1 6 is performed, i.e., an isolating layer is deposited on a surface of the device. As an example, a SiO 2 thin film is deposited by …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
buffer layer thickness (described embodiment) | 3.9 µm | buffer layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,770,556Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, then step 6) S 1 6 is performed, i.e., an isolating layer is deposited on a surface of the device. As an example, a SiO 2 thin film is deposited by …
FIG. 2, firstly step 1) S i1 is performed, i.e., a substrate 101 is provided and a GaN layer 103 and an A l GaN layer 104 are sequentially formed on a surface …
FIG. 3, then step 2) S 1 2 is performed, i.e., a source ohmic contact and a drain ohmic contact are formed on the A l GaN layer 104. Specifically, firstly a …
FIG. 4, then step 3) S 1 3 is performed, i.e., graphene is formed on a surface of the A l GaN layer 104 and fluorination treatment is performed to the graphene …
FIG. 5, this invention further provides a method for manufacturing A l GaN/GaN HEMT based on fluorinated graphene passivation, and the method comprises the …
FIG. 6, the transfer characteristics of a non-graphene passivated MIS HEMT are compared with that of the HEMT provided by the present invention, and it is …
FIG. 7. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An AlGaN/GaN H EMT based on fluorinated graphene passivation, characterized in that the H EMT comprises: a substrate; a GaN layer located above the substrate; an AlGaN layer bonded to the GaN layer, a two-dimensional electron gas surface formed by an interface between the AlGaN layer and the GaN layer; a source and a drain formed at two ends of the A l GaN layer; an insulated graphene passivation layer bonded to a surface of the AlGaN layer, wherein the insulated graphene passivation la y er is fluorinated; a gate dielectric layer bonded to a surface of the insulated graphene passivation layer; and a gate metal layer bonded to a surface of the gate dielectric layer. Currently amended
The AlGaN/GaN H EMT based on fluorinated graphene passivation according to claim 1, characterized in that a buffer layer is provided between the substrate and the GaN layer. Original
The AlGaN/GaN H EMT based on fluorinated graphene passivation according to claim 1, characterized in that the substrate comprises a silicon substrate in a (111) crystal orientation. Original
The AlGaN/GaN H EMT based on fluorinated graphene passivation according to claim 1, characterized in that the gate dielectric layer is a high-k dielectric layer. Original
(Withdrawn-currently amended) A method for manufacturing A l GaN/GaN H EMT based on fluorinated graphene passivation of claim 1, characterized in that the method comprises the following steps: 1) providing a substrate and sequentially forming a GaN layer and an AlGaN layer on a surface of the substrate, an interface between the GaN layer and the A l GaN layer forming a two- dimensional electron gas surface; 2) forming a source ohmic contact and a drain ohmic contact on the A l GaN layer; 3) covering a surface of the AlGaN layer with graphene and performing fluorination treatment to the graphene to form an insulated graphene passivation layer; and 4) forming a gate dielectric layer on a surface of the insulated graphene passivation layer and forming a gate metal layer on a surface of the gate dielectric layer. Currently amended
(Withdrawn-currently amended) The manufacturing method for the AlGaN/GaN H EMT based on fluorinated graphene passivation of claim 1 according to claim 6, characterized in that the method further comprises the following steps: 5) performing mesa isolation to a device region; 6) depositing an isolating layer on a surface of the device; 7) etching windows corresponding to the source ohmic contact, the drain ohmic contact and the gate metal layer in the isolating layer; and 8) manufacturing metal extraction electrodes based on each window. Currently amended
(Withdrawn-currently amended) The manufacturing method for the AlGaN/GaN H EMT based on fluorinated graphene passivation of claim 1 according to claim 6, characterized in that step 1) further comprises a step of forming a buffer layer between the substrate and the GaN layer. Currently amended
(Withdrawn-currently amended) The manufacturing method for the AlGaN/GaN H EMT based on fluorinated graphene passivation of claim 1 according to claim 6, characterized in that method for covering the surface of the AlGaN layer with graphene in step 3) is selected from: a. growing graphene on a Cu substrate and then transferring the graphene grown on the Cu substrate to the surface of the A l GaN layer; or b. directly growing graphene on the surface of the Al GaN layer. Currently amended
(Withdrawn-currently amended) The manufacturing on fluorinated graphene passivation of claim 1 of performing fluorination treatment to the graphene graphene by using SF₆ plasmas, treatment time
(Withdrawn-currently amended) The manufacturing on fluorinated graphene passivation of claim 1 gate dielectric layer is a high-k gate dielectric layer. method for the AlGaN/GaN H EMT based according to claim 6, characterized in that step 3) comprises the following step: treating the being 60-120s. Currently amended method for the AlGaN/GaN H EMT based according to claim 6, characterized in that the Currently amended
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials2 process steps
AlGaN/GaN HEMT device with fluorinated graphene passivation layer. Buffer layer thickness of 3.9 µm. Silicon substrate in (111) orientation. Graphene transferred to AlGaN surface, fluorinated using SF₆ plasma (60-120 s). High-k dielectric (Al₂O₃ or HfO₂) grown on fluorinated graphene layer. Gate metal layer deposited on gate dielectric. Mesa isolation, isolating layer deposition, window etching, and metal electrode extraction steps performed.
Layer stacks claimed or described, ordered top of device to substrate.
AlGaN/GaN MIS-HEMT with fluorinated graphene passivation
Materials described outside the worked examples.
Cu substrate
Cu
SF₆ plasma
SF₆
Al₂O₃
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, then step 6) S 1 6 is performed, i.e., an isolating layer is deposited on a surface of the device. As an example, a SiO 2 thin film is deposited by …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
buffer layer thickness (described embodiment) | 3.9 µm | buffer layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,770,556Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, then step 6) S 1 6 is performed, i.e., an isolating layer is deposited on a surface of the device. As an example, a SiO 2 thin film is deposited by …
FIG. 2, firstly step 1) S i1 is performed, i.e., a substrate 101 is provided and a GaN layer 103 and an A l GaN layer 104 are sequentially formed on a surface …
FIG. 3, then step 2) S 1 2 is performed, i.e., a source ohmic contact and a drain ohmic contact are formed on the A l GaN layer 104. Specifically, firstly a …
FIG. 4, then step 3) S 1 3 is performed, i.e., graphene is formed on a surface of the A l GaN layer 104 and fluorination treatment is performed to the graphene …
FIG. 5, this invention further provides a method for manufacturing A l GaN/GaN HEMT based on fluorinated graphene passivation, and the method comprises the …
FIG. 6, the transfer characteristics of a non-graphene passivated MIS HEMT are compared with that of the HEMT provided by the present invention, and it is …
FIG. 7. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An AlGaN/GaN H EMT based on fluorinated graphene passivation, characterized in that the H EMT comprises: a substrate; a GaN layer located above the substrate; an AlGaN layer bonded to the GaN layer, a two-dimensional electron gas surface formed by an interface between the AlGaN layer and the GaN layer; a source and a drain formed at two ends of the A l GaN layer; an insulated graphene passivation layer bonded to a surface of the AlGaN layer, wherein the insulated graphene passivation la y er is fluorinated; a gate dielectric layer bonded to a surface of the insulated graphene passivation layer; and a gate metal layer bonded to a surface of the gate dielectric layer. Currently amended
The AlGaN/GaN H EMT based on fluorinated graphene passivation according to claim 1, characterized in that a buffer layer is provided between the substrate and the GaN layer. Original
The AlGaN/GaN H EMT based on fluorinated graphene passivation according to claim 1, characterized in that the substrate comprises a silicon substrate in a (111) crystal orientation. Original
The AlGaN/GaN H EMT based on fluorinated graphene passivation according to claim 1, characterized in that the gate dielectric layer is a high-k dielectric layer. Original
(Withdrawn-currently amended) A method for manufacturing A l GaN/GaN H EMT based on fluorinated graphene passivation of claim 1, characterized in that the method comprises the following steps: 1) providing a substrate and sequentially forming a GaN layer and an AlGaN layer on a surface of the substrate, an interface between the GaN layer and the A l GaN layer forming a two- dimensional electron gas surface; 2) forming a source ohmic contact and a drain ohmic contact on the A l GaN layer; 3) covering a surface of the AlGaN layer with graphene and performing fluorination treatment to the graphene to form an insulated graphene passivation layer; and 4) forming a gate dielectric layer on a surface of the insulated graphene passivation layer and forming a gate metal layer on a surface of the gate dielectric layer. Currently amended
(Withdrawn-currently amended) The manufacturing method for the AlGaN/GaN H EMT based on fluorinated graphene passivation of claim 1 according to claim 6, characterized in that the method further comprises the following steps: 5) performing mesa isolation to a device region; 6) depositing an isolating layer on a surface of the device; 7) etching windows corresponding to the source ohmic contact, the drain ohmic contact and the gate metal layer in the isolating layer; and 8) manufacturing metal extraction electrodes based on each window. Currently amended
(Withdrawn-currently amended) The manufacturing method for the AlGaN/GaN H EMT based on fluorinated graphene passivation of claim 1 according to claim 6, characterized in that step 1) further comprises a step of forming a buffer layer between the substrate and the GaN layer. Currently amended
(Withdrawn-currently amended) The manufacturing method for the AlGaN/GaN H EMT based on fluorinated graphene passivation of claim 1 according to claim 6, characterized in that method for covering the surface of the AlGaN layer with graphene in step 3) is selected from: a. growing graphene on a Cu substrate and then transferring the graphene grown on the Cu substrate to the surface of the A l GaN layer; or b. directly growing graphene on the surface of the Al GaN layer. Currently amended
(Withdrawn-currently amended) The manufacturing on fluorinated graphene passivation of claim 1 of performing fluorination treatment to the graphene graphene by using SF₆ plasmas, treatment time
(Withdrawn-currently amended) The manufacturing on fluorinated graphene passivation of claim 1 gate dielectric layer is a high-k gate dielectric layer. method for the AlGaN/GaN H EMT based according to claim 6, characterized in that step 3) comprises the following step: treating the being 60-120s. Currently amended method for the AlGaN/GaN H EMT based according to claim 6, characterized in that the Currently amended
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials2 process steps
AlGaN/GaN HEMT device with fluorinated graphene passivation layer. Buffer layer thickness of 3.9 µm. Silicon substrate in (111) orientation. Graphene transferred to AlGaN surface, fluorinated using SF₆ plasma (60-120 s). High-k dielectric (Al₂O₃ or HfO₂) grown on fluorinated graphene layer. Gate metal layer deposited on gate dielectric. Mesa isolation, isolating layer deposition, window etching, and metal electrode extraction steps performed.
Layer stacks claimed or described, ordered top of device to substrate.
AlGaN/GaN MIS-HEMT with fluorinated graphene passivation
Materials described outside the worked examples.
Cu substrate
Cu
SF₆ plasma
SF₆
Al₂O₃
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1, then step 6) S 1 6 is performed, i.e., an isolating layer is deposited on a surface of the device. As an example, a SiO 2 thin film is deposited by …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
buffer layer thickness (described embodiment) | 3.9 µm | buffer layer |
Related documents with shared materials, methods, properties, or citations.
HfO₂
FIG. 7. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the …
FIG. 7. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the …
HfO₂
FIG. 7. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the …
FIG. 7. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the …
HfO₂
FIG. 7. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the …
FIG. 7. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the …
HfO₂
FIG. 7. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the …
FIG. 7. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the …