DEFECTIVE GRAPHENE-BASED MEMRISTOR | Matter42 Literature
Patent
Atlas literature
Patent
US 8,203,171
DEFECTIVE GRAPHENE-BASED MEMRISTOR
Joshua Yang
US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
7 independent · 13 dependent
1
IndependentCmemristive material (weakly ionic conductor)defective graphene-based memristor (claim 1)
1. A defective graphene-based memristor, comprising: a first electrode; a defective graphene structure adjacent the first electrode, the defective graphene structure co mp risin g a defective graphene la y er havin g one or more engineered defects, wherein an en g ineered defect com p rises a nanopore; a memristive material adjacent the defective graphene structure, the memristive material comprising a plurality of ions; a second electrode adjacent the memristive material; and a voltage source that generates an electric field between the first and the second electrodes, wherein the plurality of ions in the memristive material, under the influence of the electric field, form an ion conducting channel between the second electrode and the defective graphene structure.
The graphene memristor of elaim- claim 1, wherein the ion conducting channel forms under the nanopore and has a diameter substantially the same as the nanopore.
The graphene memristor of claim 1, wherein when the ion conducting channel is complete between the defective graphene layer and the second electrode, the graphene memristor is in an ON state.
2
Independent
Cancelled.
3
Independent
Cancelled.
9
IndependentCmemristive material (weakly ionic conductor)defective nano-scale graphene-based memristor (claim 9)
A defective nano-scale graphene-based memristor, comprising: a first electrode; a second electrode electrically coupled to the first electrode through a voltage source; a defective graphene structure comprising a defective graphene layer adjacent the first electrode and comprising one or more engineered nanopores; and a memristive material interspersed between the defective graphene layer and the second electrode, the memristive material including a plurality of ions, wherein application of a voltage using the voltage source causes the ions to form a conducting channel between each o f the nanopores and the second electrode, whereby the defective nanoscale graphene-based memristor is switched from a first state to a second state.
The defective nano-scale graphene-based memristor of claim 9, wherein the memristive material is a weakly ionic conductor chosen from a group consisting of nitrides, phosphates, and sulfides.
A defective graphene-based memristor, comprising: a first electrode; a second electrode; means for applying a switching potential to the first and the second electrodes; and Page 3 of 6 Application No. 12/754,300 Attorney Docket No 82262108 Amendment and Response to Office Action Dated means for switching the graphene memristor from an OFF state to an ON state com p rising one or more engineered nanopores in a defective graphene structure, wherein the graphene memristor remains in a most recent one of the OFF state and the ON state when the potential is removed from the graphene memristor,
The graphene-based memristor of claim 12, wherein the means for switching, comprises: a weakly ionic conductor adjacent the second electrode; and &-4efeetiv e-the defective graphene structure interspersed between the first electrode and the conductor.
The graphene-based memristor of claim 12, comprises a dielectric material between two graphene wherein the defective graphene structure is a wherein the defective graphene structure is wherein the defective graphene structure layers of the graphite.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
7 independent · 13 dependent
1
IndependentCmemristive material (weakly ionic conductor)defective graphene-based memristor (claim 1)
1. A defective graphene-based memristor, comprising: a first electrode; a defective graphene structure adjacent the first electrode, the defective graphene structure co mp risin g a defective graphene la y er havin g one or more engineered defects, wherein an en g ineered defect com p rises a nanopore; a memristive material adjacent the defective graphene structure, the memristive material comprising a plurality of ions; a second electrode adjacent the memristive material; and a voltage source that generates an electric field between the first and the second electrodes, wherein the plurality of ions in the memristive material, under the influence of the electric field, form an ion conducting channel between the second electrode and the defective graphene structure.
The graphene memristor of elaim- claim 1, wherein the ion conducting channel forms under the nanopore and has a diameter substantially the same as the nanopore.
The graphene memristor of claim 1, wherein when the ion conducting channel is complete between the defective graphene layer and the second electrode, the graphene memristor is in an ON state.
2
Independent
Cancelled.
3
Independent
Cancelled.
9
IndependentCmemristive material (weakly ionic conductor)defective nano-scale graphene-based memristor (claim 9)
A defective nano-scale graphene-based memristor, comprising: a first electrode; a second electrode electrically coupled to the first electrode through a voltage source; a defective graphene structure comprising a defective graphene layer adjacent the first electrode and comprising one or more engineered nanopores; and a memristive material interspersed between the defective graphene layer and the second electrode, the memristive material including a plurality of ions, wherein application of a voltage using the voltage source causes the ions to form a conducting channel between each o f the nanopores and the second electrode, whereby the defective nanoscale graphene-based memristor is switched from a first state to a second state.
The defective nano-scale graphene-based memristor of claim 9, wherein the memristive material is a weakly ionic conductor chosen from a group consisting of nitrides, phosphates, and sulfides.
A defective graphene-based memristor, comprising: a first electrode; a second electrode; means for applying a switching potential to the first and the second electrodes; and Page 3 of 6 Application No. 12/754,300 Attorney Docket No 82262108 Amendment and Response to Office Action Dated means for switching the graphene memristor from an OFF state to an ON state com p rising one or more engineered nanopores in a defective graphene structure, wherein the graphene memristor remains in a most recent one of the OFF state and the ON state when the potential is removed from the graphene memristor,
The graphene-based memristor of claim 12, wherein the means for switching, comprises: a weakly ionic conductor adjacent the second electrode; and &-4efeetiv e-the defective graphene structure interspersed between the first electrode and the conductor.
The graphene-based memristor of claim 12, comprises a dielectric material between two graphene wherein the defective graphene structure is a wherein the defective graphene structure is wherein the defective graphene structure layers of the graphite.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
7 independent · 13 dependent
1
IndependentCmemristive material (weakly ionic conductor)defective graphene-based memristor (claim 1)
1. A defective graphene-based memristor, comprising: a first electrode; a defective graphene structure adjacent the first electrode, the defective graphene structure co mp risin g a defective graphene la y er havin g one or more engineered defects, wherein an en g ineered defect com p rises a nanopore; a memristive material adjacent the defective graphene structure, the memristive material comprising a plurality of ions; a second electrode adjacent the memristive material; and a voltage source that generates an electric field between the first and the second electrodes, wherein the plurality of ions in the memristive material, under the influence of the electric field, form an ion conducting channel between the second electrode and the defective graphene structure.
The graphene memristor of elaim- claim 1, wherein the ion conducting channel forms under the nanopore and has a diameter substantially the same as the nanopore.
The graphene memristor of claim 1, wherein when the ion conducting channel is complete between the defective graphene layer and the second electrode, the graphene memristor is in an ON state.
2
Independent
Cancelled.
3
Independent
Cancelled.
9
IndependentCmemristive material (weakly ionic conductor)defective nano-scale graphene-based memristor (claim 9)
A defective nano-scale graphene-based memristor, comprising: a first electrode; a second electrode electrically coupled to the first electrode through a voltage source; a defective graphene structure comprising a defective graphene layer adjacent the first electrode and comprising one or more engineered nanopores; and a memristive material interspersed between the defective graphene layer and the second electrode, the memristive material including a plurality of ions, wherein application of a voltage using the voltage source causes the ions to form a conducting channel between each o f the nanopores and the second electrode, whereby the defective nanoscale graphene-based memristor is switched from a first state to a second state.
The defective nano-scale graphene-based memristor of claim 9, wherein the memristive material is a weakly ionic conductor chosen from a group consisting of nitrides, phosphates, and sulfides.
A defective graphene-based memristor, comprising: a first electrode; a second electrode; means for applying a switching potential to the first and the second electrodes; and Page 3 of 6 Application No. 12/754,300 Attorney Docket No 82262108 Amendment and Response to Office Action Dated means for switching the graphene memristor from an OFF state to an ON state com p rising one or more engineered nanopores in a defective graphene structure, wherein the graphene memristor remains in a most recent one of the OFF state and the ON state when the potential is removed from the graphene memristor,
The graphene-based memristor of claim 12, wherein the means for switching, comprises: a weakly ionic conductor adjacent the second electrode; and &-4efeetiv e-the defective graphene structure interspersed between the first electrode and the conductor.
The graphene-based memristor of claim 12, comprises a dielectric material between two graphene wherein the defective graphene structure is a wherein the defective graphene structure is wherein the defective graphene structure layers of the graphite.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
7 independent · 13 dependent
1
IndependentCmemristive material (weakly ionic conductor)defective graphene-based memristor (claim 1)
1. A defective graphene-based memristor, comprising: a first electrode; a defective graphene structure adjacent the first electrode, the defective graphene structure co mp risin g a defective graphene la y er havin g one or more engineered defects, wherein an en g ineered defect com p rises a nanopore; a memristive material adjacent the defective graphene structure, the memristive material comprising a plurality of ions; a second electrode adjacent the memristive material; and a voltage source that generates an electric field between the first and the second electrodes, wherein the plurality of ions in the memristive material, under the influence of the electric field, form an ion conducting channel between the second electrode and the defective graphene structure.
The graphene memristor of elaim- claim 1, wherein the ion conducting channel forms under the nanopore and has a diameter substantially the same as the nanopore.
The graphene memristor of claim 1, wherein when the ion conducting channel is complete between the defective graphene layer and the second electrode, the graphene memristor is in an ON state.
2
Independent
Cancelled.
3
Independent
Cancelled.
9
IndependentCmemristive material (weakly ionic conductor)defective nano-scale graphene-based memristor (claim 9)
A defective nano-scale graphene-based memristor, comprising: a first electrode; a second electrode electrically coupled to the first electrode through a voltage source; a defective graphene structure comprising a defective graphene layer adjacent the first electrode and comprising one or more engineered nanopores; and a memristive material interspersed between the defective graphene layer and the second electrode, the memristive material including a plurality of ions, wherein application of a voltage using the voltage source causes the ions to form a conducting channel between each o f the nanopores and the second electrode, whereby the defective nanoscale graphene-based memristor is switched from a first state to a second state.
The defective nano-scale graphene-based memristor of claim 9, wherein the memristive material is a weakly ionic conductor chosen from a group consisting of nitrides, phosphates, and sulfides.
A defective graphene-based memristor, comprising: a first electrode; a second electrode; means for applying a switching potential to the first and the second electrodes; and Page 3 of 6 Application No. 12/754,300 Attorney Docket No 82262108 Amendment and Response to Office Action Dated means for switching the graphene memristor from an OFF state to an ON state com p rising one or more engineered nanopores in a defective graphene structure, wherein the graphene memristor remains in a most recent one of the OFF state and the ON state when the potential is removed from the graphene memristor,
The graphene-based memristor of claim 12, wherein the means for switching, comprises: a weakly ionic conductor adjacent the second electrode; and &-4efeetiv e-the defective graphene structure interspersed between the first electrode and the conductor.
The graphene-based memristor of claim 12, comprises a dielectric material between two graphene wherein the defective graphene structure is a wherein the defective graphene structure is wherein the defective graphene structure layers of the graphite.
