ALL GRAPHENE FLASH MEMORY DEVICE

Augustin J. Hong

Patent

Atlas literature

Patent

US 8,772,853

ALL GRAPHENE FLASH MEMORY DEVICE

Augustin J. Hong

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

13 independent · 19 dependent

1
Independentgraphene channel layerpolymer layertunnel oxide layergraphene storage layergraphene electrodeGraphene Flash Memory (GFM) device
(Cu rr ently Amended) A Graphene Flash Memory (GFM) device compris ing: a graphene channel la yer: a polymer layer over the graphene channel la yer: a tunnel oxide layer on a surface of the polymer la yer op posite the graphene channel layer; and a plura li ty of memory cells on a surface of the tunnel oxide la yer op posite the polymer lay er, each memory cell of the plura li ty of memory cells comp ri sing [[a]] t he graphene channel lay er, the polymer layer, the tunnel oxide la yer, a graphene storage layer, -a-pel-ymer-ayer and a graphene electrode.
1. 2
  Dependent← claim 1substrateGraphene Flash Memory (GFM) device
  (Cu rr ently Amended) The GFM device of claim 1 wherein the GFM device further comp ri ses: a substrate on a surface of the g raphene channel la yer op posite the pol ymer layer.;-and
2. 9
  Dependent← claim 1substratepolymer interlayerGFM device with peripheral circuits and polymer interlayer
  (Cu rr ently Amended) The GFM device of claim 1 wherein the GFM device comp n ses: a substrate; one or more pe n pheral circuits on a surface of the substrate; a polymer in terlayer on a surface of the one or more pe ri pheral circuits opposite the substrate; and [[a]] t he graphene channel layer on a surface of the polymer in terlayer opposite the one or more pe n pheral circuits, wherein the plura li ty of memory cells are on the graphene channel layer.
3. 15
  Dependent← claim 1GFM device with stacked layers of memory cells
  The GFM device of claim 1 further comprising a plura li ty of stacked layers of memory cells, wherein the plura li ty of memory cells are included in the plura li ty of stacked layers of memory cells.
4. 20
  Dependent← claim 1graphene channel layerGraphene Flash Memory (GFM) device
  (Cu rr ently Amended) The GFM device of claim 1 wherein the graphene channel la v er is a single atomic layer of graphene.
5. 22
  Dependent← claim 1graphene storage layerGraphene Flash Memory (GFM) device
  The GFM device of claim 1 wherein the graphene storage layer is 1 to 4 atomic layers of graphene. 5 Attorney Docket No 1151-014 App li cation No 13/180,601
6. 23
  Dependent← claim 1graphene electrodeGraphene Flash Memory (GFM) device
  The GFM device of claim 1 wherein the graphene electrode is 1 to 4 atomic layers of graphene.
7. 24
  Dependent← claim 1Graphene Flash Memory (GFM) device
  The GFM device of claim 1 wherein a feature size of the plura li ty of memory cells is less than 25 nanometers.
8. 25
  Dependent← claim 1Graphene Flash Memory (GFM) device
  The GFM device of claim 1 wherein a feature size of the plura li ty of memory cells is less than or equal to 20 nanometers.
9. 26
  Dependent← claim 1Graphene Flash Memory (GFM) device
  The GFM device of claim 1 wherein a feature size of the plura li ty of memory cells is less than or equal to 15 nanometers.
10. 27
  Dependent← claim 1Graphene Flash Memory (GFM) device
  The GFM device of claim 1 wherein a feature size of the plura li ty of memory cells is less than or equal to 10 nanometers.
11. 28
  Dependent← claim 1Graphene Flash Memory (GFM) device
  The GFM device of claim 1 wherein a feature size of the plura li ty of memory cells is less than or equal to 5 nanometers.
5
Independent
canceled
6
Independent
canceled
7
Independent
canceled
8
Independent
canceled
12
Independent
canceled
13
Independent
canceled
14
Independent
canceled
18
Independent
canceled
19
Independent
canceled
29
Independentgraphene channel layerpolymer layertunnel oxide layergraphene storage layergraphene electrodecontrol oxide layerGFM memory cell
(Cu rr ently Amended) A memory cell comprising: a graphene channel la y er; a polymer layer on a surface of the graphene channel la v er; a tunnel oxide la y er on a surface of the polymer layer opposite the graphene channel lay er; a graphene storage layer on a surface of the tunnel oxide la v er opposite the polymer layer; a control oxide la y er on a surface of the graphene storage layer opposite the tunnel oxide lay er; and a graphene electrode on a surface of the control oxide la v er opposite the graphene storage layer. 6 Attorney Docket No 1151-014 App li cation No 13/180,601
1. 30
  Dependent← claim 29polymer base layerGFM memory cell
  (Cu rr ently Amended) The memory cell of claim 29 further comp ri sing a polymer base layer on the surface of the graphene channel la v er opposite the tunnel oxide la v er. currently amended
31
Independent
canceled
32
Independent
canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

Graphene Flash Memory (GFM) device

graphene electrodegate electrode

graphene storage layercharge storage

tunnel oxide layertunnel dielectric

polymer layertunnel dielectric interlayer polymer

graphene channel layerchannel

GFM memory cell

Materials

Materials described outside the worked examples.

graphene channel layer

Claimed Channel Material

polymer layer

Dielectric Interlayer

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	≤ 25 nm	—
Thickness	5–7 nm

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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