Patent
Atlas literature
Patent
US 11,716,081 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts a circuit diagram showing how a GaN- based device is controlled by a controller according to the prior art;
FIG. 2 depicts various signal waveforms of the controller of
FIG. 3 depicts a circuit block diagram of a controller for controlling a GaN-based device according to an embodiment of the present invention;
FIG. 4 depicts a more detailed circuit diagram of the controller of
FIG. 5 depicts a more detailed circuit diagram of the controller of
FIG. 6 depicts a more detailed circuit diagram of the controller of
FIG. 7 depicts a more detailed circuit diagram of the controller of
FIG. 8 depicts various signal waveforms of the controller of
FIG. 9 depicts a flowchart of a method for implementing a controller for controlling a GaN-based device according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A controller for controlling a GaN-based semiconduc-tor device, comprising: a VCC node configured for electrically connecting to a DC power supply; a GND node configured for electrically connecting to a ground; a DRV node configured for electrically connecting to a gate terminal of the GaN-based semiconductor device and transmitting a control driving signal VDRV for switching on and off the GaN-based semiconductor device; a CS node configured for electrically connecting to a source terminal of the GaN-based semiconductor device and receiving a current sensing signal VCS which is indicative of a drain-to-source current of the GaN-based semiconductor device when the source ter-minal of the GaN-based semiconductor device is con-nected to the ground through a current sensing resistor; a low dropout regulator having an input terminal con-nected to the VCC node and an internal ground terminal connected to the GND node; a step-up converter having an input terminal connected to an output terminal of the low dropout regulator and an internal ground terminal connected to the CS node; and a driver having an internal power terminal connected to an output terminal of the step-up converter, an internal ground terminal connected to the CS node and an output terminal connected to the DRV node; and wherein the low drop regulator is configured to generate a reference voltage Vref based on the DC power supply; wherein the step-up converter is configured to convert the reference voltage Vref to a step-up voltage VDD which is given by VDD=Vref+VCS; wherein the driver is configured to: receive the step-up voltage VDD from the step-up con-verter as an internal power supply voltage; receive the current sensing signal VCS from the CS node as an internal ground; and generate the control driving signal VDRV such that a gate-to-source voltage VGS applied to the GaN-based semiconductor device for switching on the GaN-based semiconductor device is stabilized to a voltage value equal to the reference voltage Vref over an on-time duration.
The controller according to claim 1, wherein the step-up converter comprises: a first diode having a positive terminal connected to the output terminal of the low-drop regulator and a nega-tive terminal connected to the internal power terminal of the driver; and a first capacitor having a first terminal connected to a negative terminal of the first diode and a second terminal connected to the CS node of the controller.
The controller according to claim 1, wherein the step-up converter comprises a half-bridge DC/DC module having an input terminal, an output terminal, a first internal ground terminal and a second internal ground terminal; wherein the input terminal of the half-bridge DC/DC module being connected to the output terminal of the low-drop regulator; wherein the output terminal of the half-bridge DC/DC module being connected to the internal power terminal of the driver; wherein the first internal ground terminal being connected to the GND node; and wherein the second internal ground terminal being con-nected to the CS node.
A method for implementing a controller for control-ling a GaN-based semiconductor device, comprising: configuring a VCC node in the controller for electrically connecting to a DC power supply; configuring a GND node in the controller for electrically connecting to a ground GND; configuring a DRV node in the controller for electrically connecting to a gate terminal of the GaN-based semiconductor device and transmitting a control driving signal VDRV for switching on and off the GaN-based semiconductor device; configuring a CS node in the controller for electrically connecting to a source terminal of the GaN-based semiconductor device and receiving a current sensing signal VCS which is indicative of a drain-to-source current of the GaN-based semiconductor device when the source terminal of the GaN-based semiconductor device is connected to the ground through a current sensing resistor; implementing a low dropout regulator, connecting an input terminal of the low dropout regulator to the VCC node, connecting an internal ground terminal of the low dropout regulator to the GND node; implementing a step-up converter, connecting an input terminal of the step-up converter to an output terminal of the low dropout regulator, connecting an internal ground terminal of the step-up converter to the CS node; implementing a driver, connecting an internal power terminal of the driver to an output terminal of the step-up converter, connecting an internal ground ter-minal of the driver to the CS node, and connecting an output terminal of the driver to the DRV node; configuring the low dropout regulator to generate a ref-erence voltage Vref based on the DC power supply; configuring the step-up converter to convert the reference voltage Vref to a step-up voltage VDD which is given by VDD=Vref+VCS; configuring the driver to: receive the step-up voltage VDD from the step-up con-verter as an internal power supply voltage; receive the current sensing signal VCS from the CS node; and generate the control driving signal VDRV such that a gate-to-source voltage VGS applied to the GaN-based semiconductor device for switching on the GaN-based semiconductor device is stabilized to a voltage value equal to the reference voltage Vref over an on-time duration.
The method according to any one of claim 10, wherein the implementation of the step-up converter comprises: providing a first diode, connecting a positive terminal of the first diode to the output terminal of the low dropout regulator, connecting a negative terminal of the first diode to the internal power terminal of the driver; and providing a first capacitor, connecting a first terminal of the first capacitor to a negative terminal of the first diode, connecting a second terminal of the first capaci-tor to the CS node of the controller.
The method according to any one of claim 10, wherein the implementation of the step-up converter comprises: providing a half-bridge DC/DC module; connecting an input terminal of the half-bridge DC/DC module to the output terminal of the low dropout regulator; connecting an output terminal of the half-bridge DC/DC module to the internal power terminal of the driver; connecting a first internal ground terminal being to the GND node; and connecting a second internal ground terminal to the CS node.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device controller
No layer stack recorded.
Materials described outside the worked examples.
GaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 8
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US 11,716,081 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts a circuit diagram showing how a GaN- based device is controlled by a controller according to the prior art;
FIG. 2 depicts various signal waveforms of the controller of
FIG. 3 depicts a circuit block diagram of a controller for controlling a GaN-based device according to an embodiment of the present invention;
FIG. 4 depicts a more detailed circuit diagram of the controller of
FIG. 5 depicts a more detailed circuit diagram of the controller of
FIG. 6 depicts a more detailed circuit diagram of the controller of
FIG. 7 depicts a more detailed circuit diagram of the controller of
FIG. 8 depicts various signal waveforms of the controller of
FIG. 9 depicts a flowchart of a method for implementing a controller for controlling a GaN-based device according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A controller for controlling a GaN-based semiconduc-tor device, comprising: a VCC node configured for electrically connecting to a DC power supply; a GND node configured for electrically connecting to a ground; a DRV node configured for electrically connecting to a gate terminal of the GaN-based semiconductor device and transmitting a control driving signal VDRV for switching on and off the GaN-based semiconductor device; a CS node configured for electrically connecting to a source terminal of the GaN-based semiconductor device and receiving a current sensing signal VCS which is indicative of a drain-to-source current of the GaN-based semiconductor device when the source ter-minal of the GaN-based semiconductor device is con-nected to the ground through a current sensing resistor; a low dropout regulator having an input terminal con-nected to the VCC node and an internal ground terminal connected to the GND node; a step-up converter having an input terminal connected to an output terminal of the low dropout regulator and an internal ground terminal connected to the CS node; and a driver having an internal power terminal connected to an output terminal of the step-up converter, an internal ground terminal connected to the CS node and an output terminal connected to the DRV node; and wherein the low drop regulator is configured to generate a reference voltage Vref based on the DC power supply; wherein the step-up converter is configured to convert the reference voltage Vref to a step-up voltage VDD which is given by VDD=Vref+VCS; wherein the driver is configured to: receive the step-up voltage VDD from the step-up con-verter as an internal power supply voltage; receive the current sensing signal VCS from the CS node as an internal ground; and generate the control driving signal VDRV such that a gate-to-source voltage VGS applied to the GaN-based semiconductor device for switching on the GaN-based semiconductor device is stabilized to a voltage value equal to the reference voltage Vref over an on-time duration.
The controller according to claim 1, wherein the step-up converter comprises: a first diode having a positive terminal connected to the output terminal of the low-drop regulator and a nega-tive terminal connected to the internal power terminal of the driver; and a first capacitor having a first terminal connected to a negative terminal of the first diode and a second terminal connected to the CS node of the controller.
The controller according to claim 1, wherein the step-up converter comprises a half-bridge DC/DC module having an input terminal, an output terminal, a first internal ground terminal and a second internal ground terminal; wherein the input terminal of the half-bridge DC/DC module being connected to the output terminal of the low-drop regulator; wherein the output terminal of the half-bridge DC/DC module being connected to the internal power terminal of the driver; wherein the first internal ground terminal being connected to the GND node; and wherein the second internal ground terminal being con-nected to the CS node.
A method for implementing a controller for control-ling a GaN-based semiconductor device, comprising: configuring a VCC node in the controller for electrically connecting to a DC power supply; configuring a GND node in the controller for electrically connecting to a ground GND; configuring a DRV node in the controller for electrically connecting to a gate terminal of the GaN-based semiconductor device and transmitting a control driving signal VDRV for switching on and off the GaN-based semiconductor device; configuring a CS node in the controller for electrically connecting to a source terminal of the GaN-based semiconductor device and receiving a current sensing signal VCS which is indicative of a drain-to-source current of the GaN-based semiconductor device when the source terminal of the GaN-based semiconductor device is connected to the ground through a current sensing resistor; implementing a low dropout regulator, connecting an input terminal of the low dropout regulator to the VCC node, connecting an internal ground terminal of the low dropout regulator to the GND node; implementing a step-up converter, connecting an input terminal of the step-up converter to an output terminal of the low dropout regulator, connecting an internal ground terminal of the step-up converter to the CS node; implementing a driver, connecting an internal power terminal of the driver to an output terminal of the step-up converter, connecting an internal ground ter-minal of the driver to the CS node, and connecting an output terminal of the driver to the DRV node; configuring the low dropout regulator to generate a ref-erence voltage Vref based on the DC power supply; configuring the step-up converter to convert the reference voltage Vref to a step-up voltage VDD which is given by VDD=Vref+VCS; configuring the driver to: receive the step-up voltage VDD from the step-up con-verter as an internal power supply voltage; receive the current sensing signal VCS from the CS node; and generate the control driving signal VDRV such that a gate-to-source voltage VGS applied to the GaN-based semiconductor device for switching on the GaN-based semiconductor device is stabilized to a voltage value equal to the reference voltage Vref over an on-time duration.
The method according to any one of claim 10, wherein the implementation of the step-up converter comprises: providing a first diode, connecting a positive terminal of the first diode to the output terminal of the low dropout regulator, connecting a negative terminal of the first diode to the internal power terminal of the driver; and providing a first capacitor, connecting a first terminal of the first capacitor to a negative terminal of the first diode, connecting a second terminal of the first capaci-tor to the CS node of the controller.
The method according to any one of claim 10, wherein the implementation of the step-up converter comprises: providing a half-bridge DC/DC module; connecting an input terminal of the half-bridge DC/DC module to the output terminal of the low dropout regulator; connecting an output terminal of the half-bridge DC/DC module to the internal power terminal of the driver; connecting a first internal ground terminal being to the GND node; and connecting a second internal ground terminal to the CS node.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device controller
No layer stack recorded.
Materials described outside the worked examples.
GaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 8
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,716,081 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts a circuit diagram showing how a GaN- based device is controlled by a controller according to the prior art;
FIG. 2 depicts various signal waveforms of the controller of
FIG. 3 depicts a circuit block diagram of a controller for controlling a GaN-based device according to an embodiment of the present invention;
FIG. 4 depicts a more detailed circuit diagram of the controller of
FIG. 5 depicts a more detailed circuit diagram of the controller of
FIG. 6 depicts a more detailed circuit diagram of the controller of
FIG. 7 depicts a more detailed circuit diagram of the controller of
FIG. 8 depicts various signal waveforms of the controller of
FIG. 9 depicts a flowchart of a method for implementing a controller for controlling a GaN-based device according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A controller for controlling a GaN-based semiconduc-tor device, comprising: a VCC node configured for electrically connecting to a DC power supply; a GND node configured for electrically connecting to a ground; a DRV node configured for electrically connecting to a gate terminal of the GaN-based semiconductor device and transmitting a control driving signal VDRV for switching on and off the GaN-based semiconductor device; a CS node configured for electrically connecting to a source terminal of the GaN-based semiconductor device and receiving a current sensing signal VCS which is indicative of a drain-to-source current of the GaN-based semiconductor device when the source ter-minal of the GaN-based semiconductor device is con-nected to the ground through a current sensing resistor; a low dropout regulator having an input terminal con-nected to the VCC node and an internal ground terminal connected to the GND node; a step-up converter having an input terminal connected to an output terminal of the low dropout regulator and an internal ground terminal connected to the CS node; and a driver having an internal power terminal connected to an output terminal of the step-up converter, an internal ground terminal connected to the CS node and an output terminal connected to the DRV node; and wherein the low drop regulator is configured to generate a reference voltage Vref based on the DC power supply; wherein the step-up converter is configured to convert the reference voltage Vref to a step-up voltage VDD which is given by VDD=Vref+VCS; wherein the driver is configured to: receive the step-up voltage VDD from the step-up con-verter as an internal power supply voltage; receive the current sensing signal VCS from the CS node as an internal ground; and generate the control driving signal VDRV such that a gate-to-source voltage VGS applied to the GaN-based semiconductor device for switching on the GaN-based semiconductor device is stabilized to a voltage value equal to the reference voltage Vref over an on-time duration.
The controller according to claim 1, wherein the step-up converter comprises: a first diode having a positive terminal connected to the output terminal of the low-drop regulator and a nega-tive terminal connected to the internal power terminal of the driver; and a first capacitor having a first terminal connected to a negative terminal of the first diode and a second terminal connected to the CS node of the controller.
The controller according to claim 1, wherein the step-up converter comprises a half-bridge DC/DC module having an input terminal, an output terminal, a first internal ground terminal and a second internal ground terminal; wherein the input terminal of the half-bridge DC/DC module being connected to the output terminal of the low-drop regulator; wherein the output terminal of the half-bridge DC/DC module being connected to the internal power terminal of the driver; wherein the first internal ground terminal being connected to the GND node; and wherein the second internal ground terminal being con-nected to the CS node.
A method for implementing a controller for control-ling a GaN-based semiconductor device, comprising: configuring a VCC node in the controller for electrically connecting to a DC power supply; configuring a GND node in the controller for electrically connecting to a ground GND; configuring a DRV node in the controller for electrically connecting to a gate terminal of the GaN-based semiconductor device and transmitting a control driving signal VDRV for switching on and off the GaN-based semiconductor device; configuring a CS node in the controller for electrically connecting to a source terminal of the GaN-based semiconductor device and receiving a current sensing signal VCS which is indicative of a drain-to-source current of the GaN-based semiconductor device when the source terminal of the GaN-based semiconductor device is connected to the ground through a current sensing resistor; implementing a low dropout regulator, connecting an input terminal of the low dropout regulator to the VCC node, connecting an internal ground terminal of the low dropout regulator to the GND node; implementing a step-up converter, connecting an input terminal of the step-up converter to an output terminal of the low dropout regulator, connecting an internal ground terminal of the step-up converter to the CS node; implementing a driver, connecting an internal power terminal of the driver to an output terminal of the step-up converter, connecting an internal ground ter-minal of the driver to the CS node, and connecting an output terminal of the driver to the DRV node; configuring the low dropout regulator to generate a ref-erence voltage Vref based on the DC power supply; configuring the step-up converter to convert the reference voltage Vref to a step-up voltage VDD which is given by VDD=Vref+VCS; configuring the driver to: receive the step-up voltage VDD from the step-up con-verter as an internal power supply voltage; receive the current sensing signal VCS from the CS node; and generate the control driving signal VDRV such that a gate-to-source voltage VGS applied to the GaN-based semiconductor device for switching on the GaN-based semiconductor device is stabilized to a voltage value equal to the reference voltage Vref over an on-time duration.
The method according to any one of claim 10, wherein the implementation of the step-up converter comprises: providing a first diode, connecting a positive terminal of the first diode to the output terminal of the low dropout regulator, connecting a negative terminal of the first diode to the internal power terminal of the driver; and providing a first capacitor, connecting a first terminal of the first capacitor to a negative terminal of the first diode, connecting a second terminal of the first capaci-tor to the CS node of the controller.
The method according to any one of claim 10, wherein the implementation of the step-up converter comprises: providing a half-bridge DC/DC module; connecting an input terminal of the half-bridge DC/DC module to the output terminal of the low dropout regulator; connecting an output terminal of the half-bridge DC/DC module to the internal power terminal of the driver; connecting a first internal ground terminal being to the GND node; and connecting a second internal ground terminal to the CS node.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device controller
No layer stack recorded.
Materials described outside the worked examples.
GaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 8
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,716,081 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 depicts a circuit diagram showing how a GaN- based device is controlled by a controller according to the prior art;
FIG. 2 depicts various signal waveforms of the controller of
FIG. 3 depicts a circuit block diagram of a controller for controlling a GaN-based device according to an embodiment of the present invention;
FIG. 4 depicts a more detailed circuit diagram of the controller of
FIG. 5 depicts a more detailed circuit diagram of the controller of
FIG. 6 depicts a more detailed circuit diagram of the controller of
FIG. 7 depicts a more detailed circuit diagram of the controller of
FIG. 8 depicts various signal waveforms of the controller of
FIG. 9 depicts a flowchart of a method for implementing a controller for controlling a GaN-based device according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A controller for controlling a GaN-based semiconduc-tor device, comprising: a VCC node configured for electrically connecting to a DC power supply; a GND node configured for electrically connecting to a ground; a DRV node configured for electrically connecting to a gate terminal of the GaN-based semiconductor device and transmitting a control driving signal VDRV for switching on and off the GaN-based semiconductor device; a CS node configured for electrically connecting to a source terminal of the GaN-based semiconductor device and receiving a current sensing signal VCS which is indicative of a drain-to-source current of the GaN-based semiconductor device when the source ter-minal of the GaN-based semiconductor device is con-nected to the ground through a current sensing resistor; a low dropout regulator having an input terminal con-nected to the VCC node and an internal ground terminal connected to the GND node; a step-up converter having an input terminal connected to an output terminal of the low dropout regulator and an internal ground terminal connected to the CS node; and a driver having an internal power terminal connected to an output terminal of the step-up converter, an internal ground terminal connected to the CS node and an output terminal connected to the DRV node; and wherein the low drop regulator is configured to generate a reference voltage Vref based on the DC power supply; wherein the step-up converter is configured to convert the reference voltage Vref to a step-up voltage VDD which is given by VDD=Vref+VCS; wherein the driver is configured to: receive the step-up voltage VDD from the step-up con-verter as an internal power supply voltage; receive the current sensing signal VCS from the CS node as an internal ground; and generate the control driving signal VDRV such that a gate-to-source voltage VGS applied to the GaN-based semiconductor device for switching on the GaN-based semiconductor device is stabilized to a voltage value equal to the reference voltage Vref over an on-time duration.
The controller according to claim 1, wherein the step-up converter comprises: a first diode having a positive terminal connected to the output terminal of the low-drop regulator and a nega-tive terminal connected to the internal power terminal of the driver; and a first capacitor having a first terminal connected to a negative terminal of the first diode and a second terminal connected to the CS node of the controller.
The controller according to claim 1, wherein the step-up converter comprises a half-bridge DC/DC module having an input terminal, an output terminal, a first internal ground terminal and a second internal ground terminal; wherein the input terminal of the half-bridge DC/DC module being connected to the output terminal of the low-drop regulator; wherein the output terminal of the half-bridge DC/DC module being connected to the internal power terminal of the driver; wherein the first internal ground terminal being connected to the GND node; and wherein the second internal ground terminal being con-nected to the CS node.
A method for implementing a controller for control-ling a GaN-based semiconductor device, comprising: configuring a VCC node in the controller for electrically connecting to a DC power supply; configuring a GND node in the controller for electrically connecting to a ground GND; configuring a DRV node in the controller for electrically connecting to a gate terminal of the GaN-based semiconductor device and transmitting a control driving signal VDRV for switching on and off the GaN-based semiconductor device; configuring a CS node in the controller for electrically connecting to a source terminal of the GaN-based semiconductor device and receiving a current sensing signal VCS which is indicative of a drain-to-source current of the GaN-based semiconductor device when the source terminal of the GaN-based semiconductor device is connected to the ground through a current sensing resistor; implementing a low dropout regulator, connecting an input terminal of the low dropout regulator to the VCC node, connecting an internal ground terminal of the low dropout regulator to the GND node; implementing a step-up converter, connecting an input terminal of the step-up converter to an output terminal of the low dropout regulator, connecting an internal ground terminal of the step-up converter to the CS node; implementing a driver, connecting an internal power terminal of the driver to an output terminal of the step-up converter, connecting an internal ground ter-minal of the driver to the CS node, and connecting an output terminal of the driver to the DRV node; configuring the low dropout regulator to generate a ref-erence voltage Vref based on the DC power supply; configuring the step-up converter to convert the reference voltage Vref to a step-up voltage VDD which is given by VDD=Vref+VCS; configuring the driver to: receive the step-up voltage VDD from the step-up con-verter as an internal power supply voltage; receive the current sensing signal VCS from the CS node; and generate the control driving signal VDRV such that a gate-to-source voltage VGS applied to the GaN-based semiconductor device for switching on the GaN-based semiconductor device is stabilized to a voltage value equal to the reference voltage Vref over an on-time duration.
The method according to any one of claim 10, wherein the implementation of the step-up converter comprises: providing a first diode, connecting a positive terminal of the first diode to the output terminal of the low dropout regulator, connecting a negative terminal of the first diode to the internal power terminal of the driver; and providing a first capacitor, connecting a first terminal of the first capacitor to a negative terminal of the first diode, connecting a second terminal of the first capaci-tor to the CS node of the controller.
The method according to any one of claim 10, wherein the implementation of the step-up converter comprises: providing a half-bridge DC/DC module; connecting an input terminal of the half-bridge DC/DC module to the output terminal of the low dropout regulator; connecting an output terminal of the half-bridge DC/DC module to the internal power terminal of the driver; connecting a first internal ground terminal being to the GND node; and connecting a second internal ground terminal to the CS node.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device controller
No layer stack recorded.
Materials described outside the worked examples.
GaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 8
Related documents with shared materials, methods, properties, or citations.
Cited non-patent literature · 2
Cited non-patent literature · 2
Cited non-patent literature · 2
Cited non-patent literature · 2
