Abstract

In band insulators, without a Fermi surface, adiabatic transport can exist due to the geometry of the ground state wavefunction. Here we show that for systems driven at a small but finite frequency ω, transport likewise depends sensitively on quantum geometry. We make this statement precise by expressing the Kubo formula for conductivity as the variation of the time-dependent polarization with respect to the applied field. We find that at linear order in frequency, the longitudinal conductivity results from an intrinsic capacitance determined by the ratio of the quantum metric and the spectral gap, establishing a fundamental link between the dielectric response and the quantum metric of insulators. We demonstrate that quantum geometry is responsible for the electronic contribution to the dielectric constant in a wide range of insulators, including the free electron gas in a quantizing magnetic field, for which we show the capacitance is quantized. We also study gapped bands of hBN-aligned twisted bilayer graphene and obstructed atomic insulators such as diamond. In the latter, we find its abnormally large refractive index to have a topological origin.

Abstract

In band insulators, without a Fermi surface, adiabatic transport can exist due to the geometry of the ground state wavefunction. Here we show that for systems driven at a small but finite frequency ω, transport likewise depends sensitively on quantum geometry. We make this statement precise by expressing the Kubo formula for conductivity as the variation of the time-dependent polarization with respect to the applied field. We find that at linear order in frequency, the longitudinal conductivity results from an intrinsic capacitance determined by the ratio of the quantum metric and the spectral gap, establishing a fundamental link between the dielectric response and the quantum metric of insulators. We demonstrate that quantum geometry is responsible for the electronic contribution to the dielectric constant in a wide range of insulators, including the free electron gas in a quantizing magnetic field, for which we show the capacitance is quantized. We also study gapped bands of hBN-aligned twisted bilayer graphene and obstructed atomic insulators such as diamond. In the latter, we find its abnormally large refractive index to have a topological origin.

Abstract

In band insulators, without a Fermi surface, adiabatic transport can exist due to the geometry of the ground state wavefunction. Here we show that for systems driven at a small but finite frequency ω, transport likewise depends sensitively on quantum geometry. We make this statement precise by expressing the Kubo formula for conductivity as the variation of the time-dependent polarization with respect to the applied field. We find that at linear order in frequency, the longitudinal conductivity results from an intrinsic capacitance determined by the ratio of the quantum metric and the spectral gap, establishing a fundamental link between the dielectric response and the quantum metric of insulators. We demonstrate that quantum geometry is responsible for the electronic contribution to the dielectric constant in a wide range of insulators, including the free electron gas in a quantizing magnetic field, for which we show the capacitance is quantized. We also study gapped bands of hBN-aligned twisted bilayer graphene and obstructed atomic insulators such as diamond. In the latter, we find its abnormally large refractive index to have a topological origin.

Abstract

In band insulators, without a Fermi surface, adiabatic transport can exist due to the geometry of the ground state wavefunction. Here we show that for systems driven at a small but finite frequency ω, transport likewise depends sensitively on quantum geometry. We make this statement precise by expressing the Kubo formula for conductivity as the variation of the time-dependent polarization with respect to the applied field. We find that at linear order in frequency, the longitudinal conductivity results from an intrinsic capacitance determined by the ratio of the quantum metric and the spectral gap, establishing a fundamental link between the dielectric response and the quantum metric of insulators. We demonstrate that quantum geometry is responsible for the electronic contribution to the dielectric constant in a wide range of insulators, including the free electron gas in a quantizing magnetic field, for which we show the capacitance is quantized. We also study gapped bands of hBN-aligned twisted bilayer graphene and obstructed atomic insulators such as diamond. In the latter, we find its abnormally large refractive index to have a topological origin.