Research paperTheoreticalExperimental CharacterizationInteger and fractional quantum anomalous Hall effects in pentalayer grapheneMing Xie, Sankar Das SarmaarXiv·2024·10.1103/PhysRevB.109.L241115·arXiv:2404.02192AbstractWe critically analyze the recently reported observation of integer (IQAHE) and fractional (FQAHE) quantum anomalous Hall effects at zero applied magnetic field in pentalayer graphene. Quantitative activation and variable range hopping transport analysis of the experimental data indicates that the observed IQAHE and FQAHE at different fillings have similar excitation gaps of the order of 5 K–10 K. The analysis also indicates a hidden background contact series resistance exceeding 10 kΩ in the fractional cases, whereas the integer case has a much smaller contact resistance of about 500 Ω.Read more
Pentalayer graphene on hBN sample studied via published transport data for zero-field IQAHE/FQAHE.4 propertiesExperimentalCStudied MaterialhBNSubstrate / DielectricExpand
Research paperTheoreticalExperimental CharacterizationInteger and fractional quantum anomalous Hall effects in pentalayer grapheneMing Xie, Sankar Das SarmaarXiv·2024·10.1103/PhysRevB.109.L241115·arXiv:2404.02192AbstractWe critically analyze the recently reported observation of integer (IQAHE) and fractional (FQAHE) quantum anomalous Hall effects at zero applied magnetic field in pentalayer graphene. Quantitative activation and variable range hopping transport analysis of the experimental data indicates that the observed IQAHE and FQAHE at different fillings have similar excitation gaps of the order of 5 K–10 K. The analysis also indicates a hidden background contact series resistance exceeding 10 kΩ in the fractional cases, whereas the integer case has a much smaller contact resistance of about 500 Ω.Read more
Pentalayer graphene on hBN sample studied via published transport data for zero-field IQAHE/FQAHE.4 propertiesExperimentalCStudied MaterialhBNSubstrate / DielectricExpand
Research paperTheoreticalExperimental CharacterizationInteger and fractional quantum anomalous Hall effects in pentalayer grapheneMing Xie, Sankar Das SarmaarXiv·2024·10.1103/PhysRevB.109.L241115·arXiv:2404.02192AbstractWe critically analyze the recently reported observation of integer (IQAHE) and fractional (FQAHE) quantum anomalous Hall effects at zero applied magnetic field in pentalayer graphene. Quantitative activation and variable range hopping transport analysis of the experimental data indicates that the observed IQAHE and FQAHE at different fillings have similar excitation gaps of the order of 5 K–10 K. The analysis also indicates a hidden background contact series resistance exceeding 10 kΩ in the fractional cases, whereas the integer case has a much smaller contact resistance of about 500 Ω.Read more
Pentalayer graphene on hBN sample studied via published transport data for zero-field IQAHE/FQAHE.4 propertiesExperimentalCStudied MaterialhBNSubstrate / DielectricExpand
Research paperTheoreticalExperimental CharacterizationInteger and fractional quantum anomalous Hall effects in pentalayer grapheneMing Xie, Sankar Das SarmaarXiv·2024·10.1103/PhysRevB.109.L241115·arXiv:2404.02192AbstractWe critically analyze the recently reported observation of integer (IQAHE) and fractional (FQAHE) quantum anomalous Hall effects at zero applied magnetic field in pentalayer graphene. Quantitative activation and variable range hopping transport analysis of the experimental data indicates that the observed IQAHE and FQAHE at different fillings have similar excitation gaps of the order of 5 K–10 K. The analysis also indicates a hidden background contact series resistance exceeding 10 kΩ in the fractional cases, whereas the integer case has a much smaller contact resistance of about 500 Ω.Read more
Pentalayer graphene on hBN sample studied via published transport data for zero-field IQAHE/FQAHE.4 propertiesExperimentalCStudied MaterialhBNSubstrate / DielectricExpand
