RF Low Noise Amplifiers and Power Amplifiers using Tunnelling Barrier modulated Superconductor-Semiconductor-Superconductor Junctions | Matter42 Literature
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RF Low Noise Amplifiers and Power Amplifiers using Tunnelling Barrier modulated Superconductor-Semiconductor-Superconductor Junctions
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Idealized superconductor-semiconductor-superconductor junction device with Nb superconducting regions, a thin Si barrier, and optional SiO₂ gate dielectric.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Idealized superconductor-semiconductor-superconductor junction device with Nb superconducting regions, a thin Si barrier, and optional SiO₂ gate dielectric.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Idealized superconductor-semiconductor-superconductor junction device with Nb superconducting regions, a thin Si barrier, and optional SiO₂ gate dielectric.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Idealized superconductor-semiconductor-superconductor junction device with Nb superconducting regions, a thin Si barrier, and optional SiO₂ gate dielectric.
