Research paperExperimental CharacterizationElectroluminescence of the graphene 2D semi-metalA. Schmitt, L. Abou-Hamdan, M. Tharrault, S. Rossetti et al.arXiv·2023·10.48550/arxiv.2306.05351·arXiv:2306.05351AbstractWe report direct far-field electroluminescence from hBN-encapsulated graphene field-effect transistors in the mid-infrared under large bias in ambient conditions. The electroluminescent signal is attributed to electrical pumping produced by interband Zener-Klein tunneling, and its spectrum is shaped by a quarter-wave resonance of the hBN/graphene/hBN/gold heterostructure.Read more
hBN-encapsulated graphene field-effect transistor with a gold backgate; sample F160.4 characterizations7 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricAuCapping Or ContactExpand
hBN-encapsulated graphene field-effect transistor used for MIR emission mapping; sample F161.4 characterizations2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricAuCapping Or ContactExpand
Research paperExperimental CharacterizationElectroluminescence of the graphene 2D semi-metalA. Schmitt, L. Abou-Hamdan, M. Tharrault, S. Rossetti et al.arXiv·2023·10.48550/arxiv.2306.05351·arXiv:2306.05351AbstractWe report direct far-field electroluminescence from hBN-encapsulated graphene field-effect transistors in the mid-infrared under large bias in ambient conditions. The electroluminescent signal is attributed to electrical pumping produced by interband Zener-Klein tunneling, and its spectrum is shaped by a quarter-wave resonance of the hBN/graphene/hBN/gold heterostructure.Read more
hBN-encapsulated graphene field-effect transistor with a gold backgate; sample F160.4 characterizations7 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricAuCapping Or ContactExpand
hBN-encapsulated graphene field-effect transistor used for MIR emission mapping; sample F161.4 characterizations2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricAuCapping Or ContactExpand
Research paperExperimental CharacterizationElectroluminescence of the graphene 2D semi-metalA. Schmitt, L. Abou-Hamdan, M. Tharrault, S. Rossetti et al.arXiv·2023·10.48550/arxiv.2306.05351·arXiv:2306.05351AbstractWe report direct far-field electroluminescence from hBN-encapsulated graphene field-effect transistors in the mid-infrared under large bias in ambient conditions. The electroluminescent signal is attributed to electrical pumping produced by interband Zener-Klein tunneling, and its spectrum is shaped by a quarter-wave resonance of the hBN/graphene/hBN/gold heterostructure.Read more
hBN-encapsulated graphene field-effect transistor with a gold backgate; sample F160.4 characterizations7 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricAuCapping Or ContactExpand
hBN-encapsulated graphene field-effect transistor used for MIR emission mapping; sample F161.4 characterizations2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricAuCapping Or ContactExpand
Research paperExperimental CharacterizationElectroluminescence of the graphene 2D semi-metalA. Schmitt, L. Abou-Hamdan, M. Tharrault, S. Rossetti et al.arXiv·2023·10.48550/arxiv.2306.05351·arXiv:2306.05351AbstractWe report direct far-field electroluminescence from hBN-encapsulated graphene field-effect transistors in the mid-infrared under large bias in ambient conditions. The electroluminescent signal is attributed to electrical pumping produced by interband Zener-Klein tunneling, and its spectrum is shaped by a quarter-wave resonance of the hBN/graphene/hBN/gold heterostructure.Read more
hBN-encapsulated graphene field-effect transistor with a gold backgate; sample F160.4 characterizations7 properties2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricAuCapping Or ContactExpand
hBN-encapsulated graphene field-effect transistor used for MIR emission mapping; sample F161.4 characterizations2 figuresExperimentalCStudied MaterialhBNSubstrate / DielectricAuCapping Or ContactExpand
