Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 µm-thick orientation-patterned GaP grown on GaAs, later chemical-mechanically polished and patterned with 10 µm x 5 µm openings in a plasma-deposited SiN mask.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 µm-thick orientation-patterned GaP grown on GaAs, later chemical-mechanically polished and patterned with 10 µm x 5 µm openings in a plasma-deposited SiN mask.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 µm-thick orientation-patterned GaP grown on GaAs, later chemical-mechanically polished and patterned with 10 µm x 5 µm openings in a plasma-deposited SiN mask.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 µm-thick orientation-patterned GaP grown on GaAs, later chemical-mechanically polished and patterned with 10 µm x 5 µm openings in a plasma-deposited SiN mask.