Patent
US 9,799,419TRITIUM DIRECT CONVERSION SEMICONDUCTOR DEVICE FOR USE WITH GALLIUM ARSENIDE OR GERMANIUM SUBSTRATES
Peter Cabauy
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,799,419Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a representation of an InGaP homojunction in contact with a tritiated scandium source connected to a load. [018]
Figure 2 illustrates a physical structure of an InGaP homojunction device for tritium betavoltaic conversion. [019]
Figure 3 is an electron band diagram for an InGaP device [020]
Figure 4 illustrates one embodiment for stacking a plurality of n/p (or p/n) cells in series using unidirectional beta sources. [021] Figures S A and S B illustrate a series connection of a p/n and an n/p cell. [022]
Figures 6A and 6B illustrate an embodiment for stacking a plurality of n/p (or p/n) cells in parallel with bi-directional beta sources. [023]
Figure 7 illustrates a parallel connection of units that are stacked vertically comprised of uni- or bi-directional beta sources. [024]
Figures 8A and 8B illustrate a seal lid for use with the device of the present invention. [025] In accordance with common practice, the various described features are not drawn to scale, but are drawn to emphasize specific features relevant to the invention. Like reference characters denote like …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
A device for producing electricity, comprising: a germanium substrate doped a first dopant type: a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type: an emitter layer doped the second dopant type: a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type: and a beta particle source for generating beta particles: The device of claim 1 wherein the plurality of stacked material layers further comprise an InAlP reflector layer doped the first dopant type and disposed between the substrate and the base layer.
A device for producing electricity, comprising: a germanium substrate doped a first dopant type: a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type: an emitter layer doped the second dopant type: 2 AMENDMENT UNDER 37 C.F.R. § 1.111 U.S. APPLICATION NO. 14/623,861 a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type; and a beta particle source for generating beta particles; The device of claim 1 wherein the plurality of stacked material layers further comprise a GaAs cap layer doped the second dopant type and having a higher doping level than the emitter layer, the GaAs cap layer disposed between the window layer and the beta particle source.
A device for producing electricity, comprising: 3 AMENDMENT UNDER 37 C.F.R. § 1.111 U.S. APPLICATION NO. 14/623,861 a germanium substrate doped a first dopant type; a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type; an emitter layer doped the second dopant type; a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type; a beta particle source for generating beta particles; and The device of claim 1 further comprising a housing, wherein the device is hermetically sealed within the housing.
A device for producing electricity, comprising: a germanium substrate doped a first dopant type; a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type; an emitter layer doped the second dopant type; a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type; a beta particle source for generating beta particles; and The device of claim 1 a the first terminal comprising a contact ring disposed on a surface of the plurality of stacked material layers.
A device for producing electricity, comprising: a germanium substrate doped a first dopant type; a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type; an emitter layer doped the second dopant type; a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type; and a beta particle source for generating beta particles; 4 AMENDMENT UNDER 37 C.F.R. § 1.111 U.S. APPLICATION NO. 14/623,861 The device of claim 1 wherein the substrate is doped a p dopant type, the base layer is doped an n dopant type and the emitter layer is doped the p dopant type, the device further comprising a p dopant type tunnel junction layer adjacent an n dopant type tunnel junction layer disposed between the substrate and the base layer with the p dopant type tunnel junction layer disposed closer to the substrate than the n dopant type tunnel junction layer.
The device of claim -- 3 wherein the plurality of stacked material layers further comprises a GaAs layer doped the first dopant type and disposed between the substrate and the base layer for serving as a nucleation layer or as a layer for establishing the crystal structure.
The device of claim -- 3 wherein the plurality of stacked material layers further comprise an intrinsic InGaP layer disposed between the base layer and the emitter layer.
The device of claim 4-5 wherein the bandgap of the window layer is greater than the band gap of the emitter layer.
The device of claim 4-5 wherein the first dopant type comprises a p dopant type and the second dopant type comprises an n dopant type or wherein the first dopant type comprises an n dopant type and the second dopant type comprises a p dopant type.
The device of claim 4-5 wherein a material of the window layer comprises one of InA l P, InAlGaP, ZnSe, A l As, A 1 AsP, and a pseudomorphic layer.
The device of claim 4-5 wherein a material of the beta particle source comprises one of InA l P, AlGaP, and InGaP, tritium metal hydride and a polymer containing tritium.
The device of claim 4-5 wherein a material of the base layer comprises one of InGaP, In(AlGa)P, and InAlP and a material of the emitter layer comprises one of InGaP, In(AlGa)P, and InA lP.
The device of claim 4-3 _ further comprising a physical barrier for shielding edges of the plurality of stacked material layers from the beta particles.
A device for producing electricity, comprising: a germanium substrate doped a p dopant type; a plurality of stacked material layers extending from the substrate, further comprising: a GaAs first layer doped the p dopant type; an InGaP base layer doped the p dopant type; an InGaP emitter layer doped an n dopant type; and an InAlP window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the n dopant type; a GaAs cap layer doped the n dopant type; an InAlP reflector layer doped the p dopant type and disposed between the substrate and the base layer; and a beta particle source for generating beta particles.
The device of claim 15 wherein the plurality of stacked material layers further comprise an intrinsic InGaP layer disposed between the base layer and the emitter layer.
The device of claim 15 wherein the GaAs first layer has a higher doping concentration than the base layer.
canceled
A device for producing electricity, comprising: a beta particle source layer for generating beta particles that travel in opposing directions from the beta particle source layer; 5 AMENDMENT UNDER 37 C.F.R. § 1.111 U.S. APPLICATION NO. 14/623,861 a plurality of stacked material layers on each one of two opposing surfaces of the beta particle source layer; each of the plurality of stacked material layers comprising: a germanium substrate doped a first dopant type; a base layer doped the first dopant type; an emitter layer doped the second dopant type; and a window layer having a lattice structure matched to the lattice structure of the emitter layer.
The device of claim 19 wherein a material of the base layer comprises one of InGaP,
Layer stacks claimed or described, ordered top of device to substrate.
betavoltaic device with germanium substrate (generic)
betavoltaic device with germanium substrate and specified InGaP/InAlP stack
Materials described outside the worked examples.
GaAs
germanium substrate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Silicon homojunction cell tritium betavoltaic efficiency (prior art background) | 1.3 % | — |
AlGaAs homojunction cell tritium betavoltaic efficiency (prior art background) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,799,419Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a representation of an InGaP homojunction in contact with a tritiated scandium source connected to a load. [018]
Figure 2 illustrates a physical structure of an InGaP homojunction device for tritium betavoltaic conversion. [019]
Figure 3 is an electron band diagram for an InGaP device [020]
Figure 4 illustrates one embodiment for stacking a plurality of n/p (or p/n) cells in series using unidirectional beta sources. [021] Figures S A and S B illustrate a series connection of a p/n and an n/p cell. [022]
Figures 6A and 6B illustrate an embodiment for stacking a plurality of n/p (or p/n) cells in parallel with bi-directional beta sources. [023]
Figure 7 illustrates a parallel connection of units that are stacked vertically comprised of uni- or bi-directional beta sources. [024]
Figures 8A and 8B illustrate a seal lid for use with the device of the present invention. [025] In accordance with common practice, the various described features are not drawn to scale, but are drawn to emphasize specific features relevant to the invention. Like reference characters denote like …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
A device for producing electricity, comprising: a germanium substrate doped a first dopant type: a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type: an emitter layer doped the second dopant type: a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type: and a beta particle source for generating beta particles: The device of claim 1 wherein the plurality of stacked material layers further comprise an InAlP reflector layer doped the first dopant type and disposed between the substrate and the base layer.
A device for producing electricity, comprising: a germanium substrate doped a first dopant type: a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type: an emitter layer doped the second dopant type: 2 AMENDMENT UNDER 37 C.F.R. § 1.111 U.S. APPLICATION NO. 14/623,861 a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type; and a beta particle source for generating beta particles; The device of claim 1 wherein the plurality of stacked material layers further comprise a GaAs cap layer doped the second dopant type and having a higher doping level than the emitter layer, the GaAs cap layer disposed between the window layer and the beta particle source.
A device for producing electricity, comprising: 3 AMENDMENT UNDER 37 C.F.R. § 1.111 U.S. APPLICATION NO. 14/623,861 a germanium substrate doped a first dopant type; a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type; an emitter layer doped the second dopant type; a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type; a beta particle source for generating beta particles; and The device of claim 1 further comprising a housing, wherein the device is hermetically sealed within the housing.
A device for producing electricity, comprising: a germanium substrate doped a first dopant type; a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type; an emitter layer doped the second dopant type; a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type; a beta particle source for generating beta particles; and The device of claim 1 a the first terminal comprising a contact ring disposed on a surface of the plurality of stacked material layers.
A device for producing electricity, comprising: a germanium substrate doped a first dopant type; a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type; an emitter layer doped the second dopant type; a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type; and a beta particle source for generating beta particles; 4 AMENDMENT UNDER 37 C.F.R. § 1.111 U.S. APPLICATION NO. 14/623,861 The device of claim 1 wherein the substrate is doped a p dopant type, the base layer is doped an n dopant type and the emitter layer is doped the p dopant type, the device further comprising a p dopant type tunnel junction layer adjacent an n dopant type tunnel junction layer disposed between the substrate and the base layer with the p dopant type tunnel junction layer disposed closer to the substrate than the n dopant type tunnel junction layer.
The device of claim -- 3 wherein the plurality of stacked material layers further comprises a GaAs layer doped the first dopant type and disposed between the substrate and the base layer for serving as a nucleation layer or as a layer for establishing the crystal structure.
The device of claim -- 3 wherein the plurality of stacked material layers further comprise an intrinsic InGaP layer disposed between the base layer and the emitter layer.
The device of claim 4-5 wherein the bandgap of the window layer is greater than the band gap of the emitter layer.
The device of claim 4-5 wherein the first dopant type comprises a p dopant type and the second dopant type comprises an n dopant type or wherein the first dopant type comprises an n dopant type and the second dopant type comprises a p dopant type.
The device of claim 4-5 wherein a material of the window layer comprises one of InA l P, InAlGaP, ZnSe, A l As, A 1 AsP, and a pseudomorphic layer.
The device of claim 4-5 wherein a material of the beta particle source comprises one of InA l P, AlGaP, and InGaP, tritium metal hydride and a polymer containing tritium.
The device of claim 4-5 wherein a material of the base layer comprises one of InGaP, In(AlGa)P, and InAlP and a material of the emitter layer comprises one of InGaP, In(AlGa)P, and InA lP.
The device of claim 4-3 _ further comprising a physical barrier for shielding edges of the plurality of stacked material layers from the beta particles.
A device for producing electricity, comprising: a germanium substrate doped a p dopant type; a plurality of stacked material layers extending from the substrate, further comprising: a GaAs first layer doped the p dopant type; an InGaP base layer doped the p dopant type; an InGaP emitter layer doped an n dopant type; and an InAlP window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the n dopant type; a GaAs cap layer doped the n dopant type; an InAlP reflector layer doped the p dopant type and disposed between the substrate and the base layer; and a beta particle source for generating beta particles.
The device of claim 15 wherein the plurality of stacked material layers further comprise an intrinsic InGaP layer disposed between the base layer and the emitter layer.
The device of claim 15 wherein the GaAs first layer has a higher doping concentration than the base layer.
canceled
A device for producing electricity, comprising: a beta particle source layer for generating beta particles that travel in opposing directions from the beta particle source layer; 5 AMENDMENT UNDER 37 C.F.R. § 1.111 U.S. APPLICATION NO. 14/623,861 a plurality of stacked material layers on each one of two opposing surfaces of the beta particle source layer; each of the plurality of stacked material layers comprising: a germanium substrate doped a first dopant type; a base layer doped the first dopant type; an emitter layer doped the second dopant type; and a window layer having a lattice structure matched to the lattice structure of the emitter layer.
The device of claim 19 wherein a material of the base layer comprises one of InGaP,
Layer stacks claimed or described, ordered top of device to substrate.
betavoltaic device with germanium substrate (generic)
betavoltaic device with germanium substrate and specified InGaP/InAlP stack
Materials described outside the worked examples.
GaAs
germanium substrate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Silicon homojunction cell tritium betavoltaic efficiency (prior art background) | 1.3 % | — |
AlGaAs homojunction cell tritium betavoltaic efficiency (prior art background) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,799,419Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a representation of an InGaP homojunction in contact with a tritiated scandium source connected to a load. [018]
Figure 2 illustrates a physical structure of an InGaP homojunction device for tritium betavoltaic conversion. [019]
Figure 3 is an electron band diagram for an InGaP device [020]
Figure 4 illustrates one embodiment for stacking a plurality of n/p (or p/n) cells in series using unidirectional beta sources. [021] Figures S A and S B illustrate a series connection of a p/n and an n/p cell. [022]
Figures 6A and 6B illustrate an embodiment for stacking a plurality of n/p (or p/n) cells in parallel with bi-directional beta sources. [023]
Figure 7 illustrates a parallel connection of units that are stacked vertically comprised of uni- or bi-directional beta sources. [024]
Figures 8A and 8B illustrate a seal lid for use with the device of the present invention. [025] In accordance with common practice, the various described features are not drawn to scale, but are drawn to emphasize specific features relevant to the invention. Like reference characters denote like …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
A device for producing electricity, comprising: a germanium substrate doped a first dopant type: a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type: an emitter layer doped the second dopant type: a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type: and a beta particle source for generating beta particles: The device of claim 1 wherein the plurality of stacked material layers further comprise an InAlP reflector layer doped the first dopant type and disposed between the substrate and the base layer.
A device for producing electricity, comprising: a germanium substrate doped a first dopant type: a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type: an emitter layer doped the second dopant type: 2 AMENDMENT UNDER 37 C.F.R. § 1.111 U.S. APPLICATION NO. 14/623,861 a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type; and a beta particle source for generating beta particles; The device of claim 1 wherein the plurality of stacked material layers further comprise a GaAs cap layer doped the second dopant type and having a higher doping level than the emitter layer, the GaAs cap layer disposed between the window layer and the beta particle source.
A device for producing electricity, comprising: 3 AMENDMENT UNDER 37 C.F.R. § 1.111 U.S. APPLICATION NO. 14/623,861 a germanium substrate doped a first dopant type; a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type; an emitter layer doped the second dopant type; a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type; a beta particle source for generating beta particles; and The device of claim 1 further comprising a housing, wherein the device is hermetically sealed within the housing.
A device for producing electricity, comprising: a germanium substrate doped a first dopant type; a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type; an emitter layer doped the second dopant type; a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type; a beta particle source for generating beta particles; and The device of claim 1 a the first terminal comprising a contact ring disposed on a surface of the plurality of stacked material layers.
A device for producing electricity, comprising: a germanium substrate doped a first dopant type; a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type; an emitter layer doped the second dopant type; a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type; and a beta particle source for generating beta particles; 4 AMENDMENT UNDER 37 C.F.R. § 1.111 U.S. APPLICATION NO. 14/623,861 The device of claim 1 wherein the substrate is doped a p dopant type, the base layer is doped an n dopant type and the emitter layer is doped the p dopant type, the device further comprising a p dopant type tunnel junction layer adjacent an n dopant type tunnel junction layer disposed between the substrate and the base layer with the p dopant type tunnel junction layer disposed closer to the substrate than the n dopant type tunnel junction layer.
The device of claim -- 3 wherein the plurality of stacked material layers further comprises a GaAs layer doped the first dopant type and disposed between the substrate and the base layer for serving as a nucleation layer or as a layer for establishing the crystal structure.
The device of claim -- 3 wherein the plurality of stacked material layers further comprise an intrinsic InGaP layer disposed between the base layer and the emitter layer.
The device of claim 4-5 wherein the bandgap of the window layer is greater than the band gap of the emitter layer.
The device of claim 4-5 wherein the first dopant type comprises a p dopant type and the second dopant type comprises an n dopant type or wherein the first dopant type comprises an n dopant type and the second dopant type comprises a p dopant type.
The device of claim 4-5 wherein a material of the window layer comprises one of InA l P, InAlGaP, ZnSe, A l As, A 1 AsP, and a pseudomorphic layer.
The device of claim 4-5 wherein a material of the beta particle source comprises one of InA l P, AlGaP, and InGaP, tritium metal hydride and a polymer containing tritium.
The device of claim 4-5 wherein a material of the base layer comprises one of InGaP, In(AlGa)P, and InAlP and a material of the emitter layer comprises one of InGaP, In(AlGa)P, and InA lP.
The device of claim 4-3 _ further comprising a physical barrier for shielding edges of the plurality of stacked material layers from the beta particles.
A device for producing electricity, comprising: a germanium substrate doped a p dopant type; a plurality of stacked material layers extending from the substrate, further comprising: a GaAs first layer doped the p dopant type; an InGaP base layer doped the p dopant type; an InGaP emitter layer doped an n dopant type; and an InAlP window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the n dopant type; a GaAs cap layer doped the n dopant type; an InAlP reflector layer doped the p dopant type and disposed between the substrate and the base layer; and a beta particle source for generating beta particles.
The device of claim 15 wherein the plurality of stacked material layers further comprise an intrinsic InGaP layer disposed between the base layer and the emitter layer.
The device of claim 15 wherein the GaAs first layer has a higher doping concentration than the base layer.
canceled
A device for producing electricity, comprising: a beta particle source layer for generating beta particles that travel in opposing directions from the beta particle source layer; 5 AMENDMENT UNDER 37 C.F.R. § 1.111 U.S. APPLICATION NO. 14/623,861 a plurality of stacked material layers on each one of two opposing surfaces of the beta particle source layer; each of the plurality of stacked material layers comprising: a germanium substrate doped a first dopant type; a base layer doped the first dopant type; an emitter layer doped the second dopant type; and a window layer having a lattice structure matched to the lattice structure of the emitter layer.
The device of claim 19 wherein a material of the base layer comprises one of InGaP,
Layer stacks claimed or described, ordered top of device to substrate.
betavoltaic device with germanium substrate (generic)
betavoltaic device with germanium substrate and specified InGaP/InAlP stack
Materials described outside the worked examples.
GaAs
germanium substrate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Silicon homojunction cell tritium betavoltaic efficiency (prior art background) | 1.3 % | — |
AlGaAs homojunction cell tritium betavoltaic efficiency (prior art background) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,799,419Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a representation of an InGaP homojunction in contact with a tritiated scandium source connected to a load. [018]
Figure 2 illustrates a physical structure of an InGaP homojunction device for tritium betavoltaic conversion. [019]
Figure 3 is an electron band diagram for an InGaP device [020]
Figure 4 illustrates one embodiment for stacking a plurality of n/p (or p/n) cells in series using unidirectional beta sources. [021] Figures S A and S B illustrate a series connection of a p/n and an n/p cell. [022]
Figures 6A and 6B illustrate an embodiment for stacking a plurality of n/p (or p/n) cells in parallel with bi-directional beta sources. [023]
Figure 7 illustrates a parallel connection of units that are stacked vertically comprised of uni- or bi-directional beta sources. [024]
Figures 8A and 8B illustrate a seal lid for use with the device of the present invention. [025] In accordance with common practice, the various described features are not drawn to scale, but are drawn to emphasize specific features relevant to the invention. Like reference characters denote like …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
A device for producing electricity, comprising: a germanium substrate doped a first dopant type: a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type: an emitter layer doped the second dopant type: a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type: and a beta particle source for generating beta particles: The device of claim 1 wherein the plurality of stacked material layers further comprise an InAlP reflector layer doped the first dopant type and disposed between the substrate and the base layer.
A device for producing electricity, comprising: a germanium substrate doped a first dopant type: a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type: an emitter layer doped the second dopant type: 2 AMENDMENT UNDER 37 C.F.R. § 1.111 U.S. APPLICATION NO. 14/623,861 a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type; and a beta particle source for generating beta particles; The device of claim 1 wherein the plurality of stacked material layers further comprise a GaAs cap layer doped the second dopant type and having a higher doping level than the emitter layer, the GaAs cap layer disposed between the window layer and the beta particle source.
A device for producing electricity, comprising: 3 AMENDMENT UNDER 37 C.F.R. § 1.111 U.S. APPLICATION NO. 14/623,861 a germanium substrate doped a first dopant type; a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type; an emitter layer doped the second dopant type; a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type; a beta particle source for generating beta particles; and The device of claim 1 further comprising a housing, wherein the device is hermetically sealed within the housing.
A device for producing electricity, comprising: a germanium substrate doped a first dopant type; a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type; an emitter layer doped the second dopant type; a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type; a beta particle source for generating beta particles; and The device of claim 1 a the first terminal comprising a contact ring disposed on a surface of the plurality of stacked material layers.
A device for producing electricity, comprising: a germanium substrate doped a first dopant type; a plurality of stacked material layers extending from the substrate, further comprising: a base layer doped the first dopant type; an emitter layer doped the second dopant type; a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type; and a beta particle source for generating beta particles; 4 AMENDMENT UNDER 37 C.F.R. § 1.111 U.S. APPLICATION NO. 14/623,861 The device of claim 1 wherein the substrate is doped a p dopant type, the base layer is doped an n dopant type and the emitter layer is doped the p dopant type, the device further comprising a p dopant type tunnel junction layer adjacent an n dopant type tunnel junction layer disposed between the substrate and the base layer with the p dopant type tunnel junction layer disposed closer to the substrate than the n dopant type tunnel junction layer.
The device of claim -- 3 wherein the plurality of stacked material layers further comprises a GaAs layer doped the first dopant type and disposed between the substrate and the base layer for serving as a nucleation layer or as a layer for establishing the crystal structure.
The device of claim -- 3 wherein the plurality of stacked material layers further comprise an intrinsic InGaP layer disposed between the base layer and the emitter layer.
The device of claim 4-5 wherein the bandgap of the window layer is greater than the band gap of the emitter layer.
The device of claim 4-5 wherein the first dopant type comprises a p dopant type and the second dopant type comprises an n dopant type or wherein the first dopant type comprises an n dopant type and the second dopant type comprises a p dopant type.
The device of claim 4-5 wherein a material of the window layer comprises one of InA l P, InAlGaP, ZnSe, A l As, A 1 AsP, and a pseudomorphic layer.
The device of claim 4-5 wherein a material of the beta particle source comprises one of InA l P, AlGaP, and InGaP, tritium metal hydride and a polymer containing tritium.
The device of claim 4-5 wherein a material of the base layer comprises one of InGaP, In(AlGa)P, and InAlP and a material of the emitter layer comprises one of InGaP, In(AlGa)P, and InA lP.
The device of claim 4-3 _ further comprising a physical barrier for shielding edges of the plurality of stacked material layers from the beta particles.
A device for producing electricity, comprising: a germanium substrate doped a p dopant type; a plurality of stacked material layers extending from the substrate, further comprising: a GaAs first layer doped the p dopant type; an InGaP base layer doped the p dopant type; an InGaP emitter layer doped an n dopant type; and an InAlP window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the n dopant type; a GaAs cap layer doped the n dopant type; an InAlP reflector layer doped the p dopant type and disposed between the substrate and the base layer; and a beta particle source for generating beta particles.
The device of claim 15 wherein the plurality of stacked material layers further comprise an intrinsic InGaP layer disposed between the base layer and the emitter layer.
The device of claim 15 wherein the GaAs first layer has a higher doping concentration than the base layer.
canceled
A device for producing electricity, comprising: a beta particle source layer for generating beta particles that travel in opposing directions from the beta particle source layer; 5 AMENDMENT UNDER 37 C.F.R. § 1.111 U.S. APPLICATION NO. 14/623,861 a plurality of stacked material layers on each one of two opposing surfaces of the beta particle source layer; each of the plurality of stacked material layers comprising: a germanium substrate doped a first dopant type; a base layer doped the first dopant type; an emitter layer doped the second dopant type; and a window layer having a lattice structure matched to the lattice structure of the emitter layer.
The device of claim 19 wherein a material of the base layer comprises one of InGaP,
Layer stacks claimed or described, ordered top of device to substrate.
betavoltaic device with germanium substrate (generic)
betavoltaic device with germanium substrate and specified InGaP/InAlP stack
Materials described outside the worked examples.
GaAs
germanium substrate
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Silicon homojunction cell tritium betavoltaic efficiency (prior art background) | 1.3 % | — |
AlGaAs homojunction cell tritium betavoltaic efficiency (prior art background) |
Related documents with shared materials, methods, properties, or citations.
double-sided betavoltaic device with beta source sandwiched between two semiconductor stacks
InGaP
window layer
InAlP
InAlGaP
ZnSe
AlAs
AlAsP
AlGaP
tritium metal hydride
polymer containing tritium
In(AlGa)P
tritiated metal hydride
| 5.6 % |
| — |
Thickness | 25–500 µm | — |
Thickness | 1–500 nm | — |
Thickness | 0.1–5 µm | — |
Thickness | 1–200 nm | — |
Thickness | 250–500 nm | — |
Pressure | 0.25–20 Bar | — |
Thickness | 1–10 µm | — |
Thickness | 0.1–1 µm | — |
Thickness | 50–100 Å | — |
Thickness | 1000–3000 Å | — |
Thickness | 50–100 nm | — |
Thickness | 5–50 µm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 50 µm | — |
double-sided betavoltaic device with beta source sandwiched between two semiconductor stacks
InGaP
window layer
InAlP
InAlGaP
ZnSe
AlAs
AlAsP
AlGaP
tritium metal hydride
polymer containing tritium
In(AlGa)P
tritiated metal hydride
| 5.6 % |
| — |
Thickness | 25–500 µm | — |
Thickness | 1–500 nm | — |
Thickness | 0.1–5 µm | — |
Thickness | 1–200 nm | — |
Thickness | 250–500 nm | — |
Pressure | 0.25–20 Bar | — |
Thickness | 1–10 µm | — |
Thickness | 0.1–1 µm | — |
Thickness | 50–100 Å | — |
Thickness | 1000–3000 Å | — |
Thickness | 50–100 nm | — |
Thickness | 5–50 µm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 50 µm | — |
double-sided betavoltaic device with beta source sandwiched between two semiconductor stacks
InGaP
window layer
InAlP
InAlGaP
ZnSe
AlAs
AlAsP
AlGaP
tritium metal hydride
polymer containing tritium
In(AlGa)P
tritiated metal hydride
| 5.6 % |
| — |
Thickness | 25–500 µm | — |
Thickness | 1–500 nm | — |
Thickness | 0.1–5 µm | — |
Thickness | 1–200 nm | — |
Thickness | 250–500 nm | — |
Pressure | 0.25–20 Bar | — |
Thickness | 1–10 µm | — |
Thickness | 0.1–1 µm | — |
Thickness | 50–100 Å | — |
Thickness | 1000–3000 Å | — |
Thickness | 50–100 nm | — |
Thickness | 5–50 µm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 50 µm | — |
double-sided betavoltaic device with beta source sandwiched between two semiconductor stacks
InGaP
window layer
InAlP
InAlGaP
ZnSe
AlAs
AlAsP
AlGaP
tritium metal hydride
polymer containing tritium
In(AlGa)P
tritiated metal hydride
| 5.6 % |
| — |
Thickness | 25–500 µm | — |
Thickness | 1–500 nm | — |
Thickness | 0.1–5 µm | — |
Thickness | 1–200 nm | — |
Thickness | 250–500 nm | — |
Pressure | 0.25–20 Bar | — |
Thickness | 1–10 µm | — |
Thickness | 0.1–1 µm | — |
Thickness | 50–100 Å | — |
Thickness | 1000–3000 Å | — |
Thickness | 50–100 nm | — |
Thickness | 5–50 µm | — |
Thickness | ≤ 1 µm | — |
Thickness | ≤ 50 µm | — |