Patent
Atlas literature
Patent
US 11,105,567Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C WO 2014/052282 Al IIIl l|IIIII|II||Vl lllllllll||||||||||III|I| III |I|VI|I||II|II|VI|IIIV|II|VI|II||||| Published:-before the expiration of the time …
FIG. 2 is a cross-sectional view of a thermal management assembly in accordance with an embodiment of the present invention; [0017]
FIG.3 is cross-sectional view of another embodiment of a thermal management assembly in accordance with aspects of the present invention; [0018] FI G.4 is a …
FIG. 4-5 illustrates the thermal resistance of the composites formed according to aspects of the present invention. As shown in
FIG.5 is a graph illustrating the thermal interface resistance of a thermal management assembly in accordance with the an embodiment of the present invention …
FIG.6 is a graph illustrating the thermal resistance of thermal management assemblies formed by different manufacturing methods.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A thermal management assembly comprising: a first substrate; a second substrate; a bulk graphene material disposed between the first and second substrates, the bulk graphene material selected from pyrolytic graphite, thermal pyrolytic graphite, highly oriented pyrolytic graphite, compression annealed pyrolytic graphite, or a combination of two or more thereof; and (a) a first thermal bond layer directly bonding (a) a first surface of the bulk graphene material and the first substrate, and (b) a second thermal bond layer directly bonding (b) a second surface of the bulk graphene material and the second substrate, the first and second thermal bond layers each comprising (i) a metal-based material wherein the metal-based material is independently chosen from silver, tin, lead, silver-copper, nickel or combinations of two or more thereof and (ii) an agent that is reactive with the bulk graphene material to form a carbide wherein the agent is chosen from titanium, zirconium, chromium, hafnium, aluminum, tantalum, iron, silicon, or a combination of two or more thereof, wherein the first and second thermal bond layers i-s are each a single layer and wherein the first and second thermal bond layers independently have a thermal conductivity of about 20 W/m-K or greater, and a melting temperature less than the melting temperature of the substrates and less than the melting temperature of the bulk graphene material. Previously presented
The thermal management assembly of claim 1, wherein the bulk graphene material comprises at least 3000 graphene layers, the graphene layers being parallel to each other at an angle of at most 1 degree per mm in thickness. Original
The thermal management assembly of claim 1, wherein the thermal bond layers have a composition different from the composition of the first substrate and the second substrate. Previously presented
The thermal mana g ement assembly of claims 1, wherein the first substrate and the second substrate independently comprise a metal or a ceramic material. Previously presented
The thermal management assembly of claims 1, wherein the first substrate and the second substrate independently comprise copper, aluminum, tungsten, molybdenum, nickel, iron, tin, silver, gold, beryllium, or alloys of two or more thereof. Previously presented
The thermal mana g ement assembly of claim 1, wherein the first substrate and the second substrate independently comprise silicon nitride, silicon carbide, aluminum nitride, aluminum oxide, beryllium oxide, boron nitride, or a combination of two or more thereof. Previously presented
The thermal management assembly of claim 1, wherein the first substrate comprises copper, aluminum, tungsten, molybdenum, nickel, iron, tin, silver, gold, beryllium, or alloys of two or more thereof, and the second substrate comprises silicon nitride, silicon carbide, aluminum nitride, aluminum oxide, beryllium oxide, boron nitride, or a combination of two or more thereof. Previously presented
The thermal management assembly of claim 1, wherein the bulk graphene material has a thickness from about 25 % to about 95 % of the total thickness of the thermal management assembly. Previously presented
The thermal management assembly of claim 1, wherein the bulk graphene material has a thickness from about 35 % to about 90 % of the total thickness of the thermal management assembly. Previously presented
The thermal management assembly of claim 1, wherein the bulk graphene material comprises at least 3000 of graphene layers, and the bulk graphene material is disposed in the assembly such that the graphene layers are oriented perpendicular to the first and second substrates. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 10 x 10-6 K-m2/W. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 5 x 10-6 K-m2/W. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 1 x 10-6 K-m2/W. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 0.5 x 10-6 K-m2/W. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 0.1 x 10-6 K-m2/W. Previously presented
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An apparatus co m prisin g a heat generating assembly of claim I disposed adjacent the heat generating component can be transferred through presented
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Canceled component and the thermal management generating component such that heat from the heat the thermal management assembly. Previously
Layer stacks claimed or described, ordered top of device to substrate.
thermal management assembly
Materials described outside the worked examples.
bulk graphene material
metal-based thermal bond layer
carbide-forming reactive agent
Measurements and analyses referenced in the patent, with their drawing references.
FIG.3 is cross-sectional view of another embodiment of a thermal management assembly in accordance with aspects of the present invention; [0018] FI G.4 is a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermal bond layer minimum thermal conductivity | ≥ 20 W/m-K | metal-based thermal bond layer |
bulk graphene in-plane thermal conductivity lower bound |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,105,567Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C WO 2014/052282 Al IIIl l|IIIII|II||Vl lllllllll||||||||||III|I| III |I|VI|I||II|II|VI|IIIV|II|VI|II||||| Published:-before the expiration of the time …
FIG. 2 is a cross-sectional view of a thermal management assembly in accordance with an embodiment of the present invention; [0017]
FIG.3 is cross-sectional view of another embodiment of a thermal management assembly in accordance with aspects of the present invention; [0018] FI G.4 is a …
FIG. 4-5 illustrates the thermal resistance of the composites formed according to aspects of the present invention. As shown in
FIG.5 is a graph illustrating the thermal interface resistance of a thermal management assembly in accordance with the an embodiment of the present invention …
FIG.6 is a graph illustrating the thermal resistance of thermal management assemblies formed by different manufacturing methods.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A thermal management assembly comprising: a first substrate; a second substrate; a bulk graphene material disposed between the first and second substrates, the bulk graphene material selected from pyrolytic graphite, thermal pyrolytic graphite, highly oriented pyrolytic graphite, compression annealed pyrolytic graphite, or a combination of two or more thereof; and (a) a first thermal bond layer directly bonding (a) a first surface of the bulk graphene material and the first substrate, and (b) a second thermal bond layer directly bonding (b) a second surface of the bulk graphene material and the second substrate, the first and second thermal bond layers each comprising (i) a metal-based material wherein the metal-based material is independently chosen from silver, tin, lead, silver-copper, nickel or combinations of two or more thereof and (ii) an agent that is reactive with the bulk graphene material to form a carbide wherein the agent is chosen from titanium, zirconium, chromium, hafnium, aluminum, tantalum, iron, silicon, or a combination of two or more thereof, wherein the first and second thermal bond layers i-s are each a single layer and wherein the first and second thermal bond layers independently have a thermal conductivity of about 20 W/m-K or greater, and a melting temperature less than the melting temperature of the substrates and less than the melting temperature of the bulk graphene material. Previously presented
The thermal management assembly of claim 1, wherein the bulk graphene material comprises at least 3000 graphene layers, the graphene layers being parallel to each other at an angle of at most 1 degree per mm in thickness. Original
The thermal management assembly of claim 1, wherein the thermal bond layers have a composition different from the composition of the first substrate and the second substrate. Previously presented
The thermal mana g ement assembly of claims 1, wherein the first substrate and the second substrate independently comprise a metal or a ceramic material. Previously presented
The thermal management assembly of claims 1, wherein the first substrate and the second substrate independently comprise copper, aluminum, tungsten, molybdenum, nickel, iron, tin, silver, gold, beryllium, or alloys of two or more thereof. Previously presented
The thermal mana g ement assembly of claim 1, wherein the first substrate and the second substrate independently comprise silicon nitride, silicon carbide, aluminum nitride, aluminum oxide, beryllium oxide, boron nitride, or a combination of two or more thereof. Previously presented
The thermal management assembly of claim 1, wherein the first substrate comprises copper, aluminum, tungsten, molybdenum, nickel, iron, tin, silver, gold, beryllium, or alloys of two or more thereof, and the second substrate comprises silicon nitride, silicon carbide, aluminum nitride, aluminum oxide, beryllium oxide, boron nitride, or a combination of two or more thereof. Previously presented
The thermal management assembly of claim 1, wherein the bulk graphene material has a thickness from about 25 % to about 95 % of the total thickness of the thermal management assembly. Previously presented
The thermal management assembly of claim 1, wherein the bulk graphene material has a thickness from about 35 % to about 90 % of the total thickness of the thermal management assembly. Previously presented
The thermal management assembly of claim 1, wherein the bulk graphene material comprises at least 3000 of graphene layers, and the bulk graphene material is disposed in the assembly such that the graphene layers are oriented perpendicular to the first and second substrates. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 10 x 10-6 K-m2/W. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 5 x 10-6 K-m2/W. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 1 x 10-6 K-m2/W. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 0.5 x 10-6 K-m2/W. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 0.1 x 10-6 K-m2/W. Previously presented
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An apparatus co m prisin g a heat generating assembly of claim I disposed adjacent the heat generating component can be transferred through presented
Canceled
Canceled component and the thermal management generating component such that heat from the heat the thermal management assembly. Previously
Layer stacks claimed or described, ordered top of device to substrate.
thermal management assembly
Materials described outside the worked examples.
bulk graphene material
metal-based thermal bond layer
carbide-forming reactive agent
Measurements and analyses referenced in the patent, with their drawing references.
FIG.3 is cross-sectional view of another embodiment of a thermal management assembly in accordance with aspects of the present invention; [0018] FI G.4 is a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermal bond layer minimum thermal conductivity | ≥ 20 W/m-K | metal-based thermal bond layer |
bulk graphene in-plane thermal conductivity lower bound |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,105,567Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C WO 2014/052282 Al IIIl l|IIIII|II||Vl lllllllll||||||||||III|I| III |I|VI|I||II|II|VI|IIIV|II|VI|II||||| Published:-before the expiration of the time …
FIG. 2 is a cross-sectional view of a thermal management assembly in accordance with an embodiment of the present invention; [0017]
FIG.3 is cross-sectional view of another embodiment of a thermal management assembly in accordance with aspects of the present invention; [0018] FI G.4 is a …
FIG. 4-5 illustrates the thermal resistance of the composites formed according to aspects of the present invention. As shown in
FIG.5 is a graph illustrating the thermal interface resistance of a thermal management assembly in accordance with the an embodiment of the present invention …
FIG.6 is a graph illustrating the thermal resistance of thermal management assemblies formed by different manufacturing methods.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A thermal management assembly comprising: a first substrate; a second substrate; a bulk graphene material disposed between the first and second substrates, the bulk graphene material selected from pyrolytic graphite, thermal pyrolytic graphite, highly oriented pyrolytic graphite, compression annealed pyrolytic graphite, or a combination of two or more thereof; and (a) a first thermal bond layer directly bonding (a) a first surface of the bulk graphene material and the first substrate, and (b) a second thermal bond layer directly bonding (b) a second surface of the bulk graphene material and the second substrate, the first and second thermal bond layers each comprising (i) a metal-based material wherein the metal-based material is independently chosen from silver, tin, lead, silver-copper, nickel or combinations of two or more thereof and (ii) an agent that is reactive with the bulk graphene material to form a carbide wherein the agent is chosen from titanium, zirconium, chromium, hafnium, aluminum, tantalum, iron, silicon, or a combination of two or more thereof, wherein the first and second thermal bond layers i-s are each a single layer and wherein the first and second thermal bond layers independently have a thermal conductivity of about 20 W/m-K or greater, and a melting temperature less than the melting temperature of the substrates and less than the melting temperature of the bulk graphene material. Previously presented
The thermal management assembly of claim 1, wherein the bulk graphene material comprises at least 3000 graphene layers, the graphene layers being parallel to each other at an angle of at most 1 degree per mm in thickness. Original
The thermal management assembly of claim 1, wherein the thermal bond layers have a composition different from the composition of the first substrate and the second substrate. Previously presented
The thermal mana g ement assembly of claims 1, wherein the first substrate and the second substrate independently comprise a metal or a ceramic material. Previously presented
The thermal management assembly of claims 1, wherein the first substrate and the second substrate independently comprise copper, aluminum, tungsten, molybdenum, nickel, iron, tin, silver, gold, beryllium, or alloys of two or more thereof. Previously presented
The thermal mana g ement assembly of claim 1, wherein the first substrate and the second substrate independently comprise silicon nitride, silicon carbide, aluminum nitride, aluminum oxide, beryllium oxide, boron nitride, or a combination of two or more thereof. Previously presented
The thermal management assembly of claim 1, wherein the first substrate comprises copper, aluminum, tungsten, molybdenum, nickel, iron, tin, silver, gold, beryllium, or alloys of two or more thereof, and the second substrate comprises silicon nitride, silicon carbide, aluminum nitride, aluminum oxide, beryllium oxide, boron nitride, or a combination of two or more thereof. Previously presented
The thermal management assembly of claim 1, wherein the bulk graphene material has a thickness from about 25 % to about 95 % of the total thickness of the thermal management assembly. Previously presented
The thermal management assembly of claim 1, wherein the bulk graphene material has a thickness from about 35 % to about 90 % of the total thickness of the thermal management assembly. Previously presented
The thermal management assembly of claim 1, wherein the bulk graphene material comprises at least 3000 of graphene layers, and the bulk graphene material is disposed in the assembly such that the graphene layers are oriented perpendicular to the first and second substrates. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 10 x 10-6 K-m2/W. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 5 x 10-6 K-m2/W. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 1 x 10-6 K-m2/W. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 0.5 x 10-6 K-m2/W. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 0.1 x 10-6 K-m2/W. Previously presented
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An apparatus co m prisin g a heat generating assembly of claim I disposed adjacent the heat generating component can be transferred through presented
Canceled
Canceled component and the thermal management generating component such that heat from the heat the thermal management assembly. Previously
Layer stacks claimed or described, ordered top of device to substrate.
thermal management assembly
Materials described outside the worked examples.
bulk graphene material
metal-based thermal bond layer
carbide-forming reactive agent
Measurements and analyses referenced in the patent, with their drawing references.
FIG.3 is cross-sectional view of another embodiment of a thermal management assembly in accordance with aspects of the present invention; [0018] FI G.4 is a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermal bond layer minimum thermal conductivity | ≥ 20 W/m-K | metal-based thermal bond layer |
bulk graphene in-plane thermal conductivity lower bound |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,105,567Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C WO 2014/052282 Al IIIl l|IIIII|II||Vl lllllllll||||||||||III|I| III |I|VI|I||II|II|VI|IIIV|II|VI|II||||| Published:-before the expiration of the time …
FIG. 2 is a cross-sectional view of a thermal management assembly in accordance with an embodiment of the present invention; [0017]
FIG.3 is cross-sectional view of another embodiment of a thermal management assembly in accordance with aspects of the present invention; [0018] FI G.4 is a …
FIG. 4-5 illustrates the thermal resistance of the composites formed according to aspects of the present invention. As shown in
FIG.5 is a graph illustrating the thermal interface resistance of a thermal management assembly in accordance with the an embodiment of the present invention …
FIG.6 is a graph illustrating the thermal resistance of thermal management assemblies formed by different manufacturing methods.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A thermal management assembly comprising: a first substrate; a second substrate; a bulk graphene material disposed between the first and second substrates, the bulk graphene material selected from pyrolytic graphite, thermal pyrolytic graphite, highly oriented pyrolytic graphite, compression annealed pyrolytic graphite, or a combination of two or more thereof; and (a) a first thermal bond layer directly bonding (a) a first surface of the bulk graphene material and the first substrate, and (b) a second thermal bond layer directly bonding (b) a second surface of the bulk graphene material and the second substrate, the first and second thermal bond layers each comprising (i) a metal-based material wherein the metal-based material is independently chosen from silver, tin, lead, silver-copper, nickel or combinations of two or more thereof and (ii) an agent that is reactive with the bulk graphene material to form a carbide wherein the agent is chosen from titanium, zirconium, chromium, hafnium, aluminum, tantalum, iron, silicon, or a combination of two or more thereof, wherein the first and second thermal bond layers i-s are each a single layer and wherein the first and second thermal bond layers independently have a thermal conductivity of about 20 W/m-K or greater, and a melting temperature less than the melting temperature of the substrates and less than the melting temperature of the bulk graphene material. Previously presented
The thermal management assembly of claim 1, wherein the bulk graphene material comprises at least 3000 graphene layers, the graphene layers being parallel to each other at an angle of at most 1 degree per mm in thickness. Original
The thermal management assembly of claim 1, wherein the thermal bond layers have a composition different from the composition of the first substrate and the second substrate. Previously presented
The thermal mana g ement assembly of claims 1, wherein the first substrate and the second substrate independently comprise a metal or a ceramic material. Previously presented
The thermal management assembly of claims 1, wherein the first substrate and the second substrate independently comprise copper, aluminum, tungsten, molybdenum, nickel, iron, tin, silver, gold, beryllium, or alloys of two or more thereof. Previously presented
The thermal mana g ement assembly of claim 1, wherein the first substrate and the second substrate independently comprise silicon nitride, silicon carbide, aluminum nitride, aluminum oxide, beryllium oxide, boron nitride, or a combination of two or more thereof. Previously presented
The thermal management assembly of claim 1, wherein the first substrate comprises copper, aluminum, tungsten, molybdenum, nickel, iron, tin, silver, gold, beryllium, or alloys of two or more thereof, and the second substrate comprises silicon nitride, silicon carbide, aluminum nitride, aluminum oxide, beryllium oxide, boron nitride, or a combination of two or more thereof. Previously presented
The thermal management assembly of claim 1, wherein the bulk graphene material has a thickness from about 25 % to about 95 % of the total thickness of the thermal management assembly. Previously presented
The thermal management assembly of claim 1, wherein the bulk graphene material has a thickness from about 35 % to about 90 % of the total thickness of the thermal management assembly. Previously presented
The thermal management assembly of claim 1, wherein the bulk graphene material comprises at least 3000 of graphene layers, and the bulk graphene material is disposed in the assembly such that the graphene layers are oriented perpendicular to the first and second substrates. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 10 x 10-6 K-m2/W. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 5 x 10-6 K-m2/W. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 1 x 10-6 K-m2/W. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 0.5 x 10-6 K-m2/W. Previously presented
The thermal management assembly of claim 1, wherein the thermal bond has a thermal resistance of less than 0.1 x 10-6 K-m2/W. Previously presented
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An apparatus co m prisin g a heat generating assembly of claim I disposed adjacent the heat generating component can be transferred through presented
Canceled
Canceled component and the thermal management generating component such that heat from the heat the thermal management assembly. Previously
Layer stacks claimed or described, ordered top of device to substrate.
thermal management assembly
Materials described outside the worked examples.
bulk graphene material
metal-based thermal bond layer
carbide-forming reactive agent
Measurements and analyses referenced in the patent, with their drawing references.
FIG.3 is cross-sectional view of another embodiment of a thermal management assembly in accordance with aspects of the present invention; [0018] FI G.4 is a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermal bond layer minimum thermal conductivity | ≥ 20 W/m-K | metal-based thermal bond layer |
bulk graphene in-plane thermal conductivity lower bound |
Related documents with shared materials, methods, properties, or citations.
metal or ceramic substrate
metal substrate
ceramic substrate
FIG.5 is a graph illustrating the thermal interface resistance of a thermal management assembly in accordance with the an embodiment of the present invention …
FIG.6 is a graph illustrating the thermal resistance of thermal management assemblies formed by different manufacturing methods.
| ≥ 1000 W/m-K |
bulk graphene material |
bulk graphene in-plane thermal conductivity range | 1000–1800 W/m-K | bulk graphene material |
through-plane thermal conductivity of assembly with graphene layers perpendicular to substrates | 200–1200 W/m-K | — |
thermal bond thermal resistance upper limit (claim 18) | ≤ 0.00001 K-m2/W | metal-based thermal bond layer |
thermal bond thermal resistance upper limit (claim 19) | ≤ 0.000005 K-m2/W | metal-based thermal bond layer |
thermal bond thermal resistance upper limit (claim 20) | ≤ 0.000001 K-m2/W | metal-based thermal bond layer |
thermal bond thermal resistance upper limit (claim 21) | ≤ 5e-7 K-m2/W | metal-based thermal bond layer |
thermal bond thermal resistance upper limit (claim 22) | ≤ 1e-7 K-m2/W | metal-based thermal bond layer |
TPG in-plane thermal conductivity (description/background) | ≥ 1500 W/m-K | bulk graphene material |
Temperature | 1e-7 K | — |
Thickness | 0.001–1 mm | — |
Thickness | 1–5 mm | — |
Thickness | 1.5–4 mm | — |
Thickness | 2000–2000000 nm | — |
Thickness | 0.01–2 mm | — |
Thickness | 0.02–1 mm | — |
Thickness | 0.05–0.5 mm | — |
Thickness | 2–3 mm | — |
Thickness | 0.5–125 mm | — |
Thickness | 1–25 mm | — |
— | ≤ 10 W | — |
Thickness | ≥ 1 um | — |
Thickness | ≥ 1 mm | — |
— | ≥ 1 W | — |
— | ≥ 1100 W | — |
— | ≥ 1200 W | — |
— | ≥ 1500 W | — |
metal or ceramic substrate
metal substrate
ceramic substrate
FIG.5 is a graph illustrating the thermal interface resistance of a thermal management assembly in accordance with the an embodiment of the present invention …
FIG.6 is a graph illustrating the thermal resistance of thermal management assemblies formed by different manufacturing methods.
| ≥ 1000 W/m-K |
bulk graphene material |
bulk graphene in-plane thermal conductivity range | 1000–1800 W/m-K | bulk graphene material |
through-plane thermal conductivity of assembly with graphene layers perpendicular to substrates | 200–1200 W/m-K | — |
thermal bond thermal resistance upper limit (claim 18) | ≤ 0.00001 K-m2/W | metal-based thermal bond layer |
thermal bond thermal resistance upper limit (claim 19) | ≤ 0.000005 K-m2/W | metal-based thermal bond layer |
thermal bond thermal resistance upper limit (claim 20) | ≤ 0.000001 K-m2/W | metal-based thermal bond layer |
thermal bond thermal resistance upper limit (claim 21) | ≤ 5e-7 K-m2/W | metal-based thermal bond layer |
thermal bond thermal resistance upper limit (claim 22) | ≤ 1e-7 K-m2/W | metal-based thermal bond layer |
TPG in-plane thermal conductivity (description/background) | ≥ 1500 W/m-K | bulk graphene material |
Temperature | 1e-7 K | — |
Thickness | 0.001–1 mm | — |
Thickness | 1–5 mm | — |
Thickness | 1.5–4 mm | — |
Thickness | 2000–2000000 nm | — |
Thickness | 0.01–2 mm | — |
Thickness | 0.02–1 mm | — |
Thickness | 0.05–0.5 mm | — |
Thickness | 2–3 mm | — |
Thickness | 0.5–125 mm | — |
Thickness | 1–25 mm | — |
— | ≤ 10 W | — |
Thickness | ≥ 1 um | — |
Thickness | ≥ 1 mm | — |
— | ≥ 1 W | — |
— | ≥ 1100 W | — |
— | ≥ 1200 W | — |
— | ≥ 1500 W | — |
metal or ceramic substrate
metal substrate
ceramic substrate
FIG.5 is a graph illustrating the thermal interface resistance of a thermal management assembly in accordance with the an embodiment of the present invention …
FIG.6 is a graph illustrating the thermal resistance of thermal management assemblies formed by different manufacturing methods.
| ≥ 1000 W/m-K |
bulk graphene material |
bulk graphene in-plane thermal conductivity range | 1000–1800 W/m-K | bulk graphene material |
through-plane thermal conductivity of assembly with graphene layers perpendicular to substrates | 200–1200 W/m-K | — |
thermal bond thermal resistance upper limit (claim 18) | ≤ 0.00001 K-m2/W | metal-based thermal bond layer |
thermal bond thermal resistance upper limit (claim 19) | ≤ 0.000005 K-m2/W | metal-based thermal bond layer |
thermal bond thermal resistance upper limit (claim 20) | ≤ 0.000001 K-m2/W | metal-based thermal bond layer |
thermal bond thermal resistance upper limit (claim 21) | ≤ 5e-7 K-m2/W | metal-based thermal bond layer |
thermal bond thermal resistance upper limit (claim 22) | ≤ 1e-7 K-m2/W | metal-based thermal bond layer |
TPG in-plane thermal conductivity (description/background) | ≥ 1500 W/m-K | bulk graphene material |
Temperature | 1e-7 K | — |
Thickness | 0.001–1 mm | — |
Thickness | 1–5 mm | — |
Thickness | 1.5–4 mm | — |
Thickness | 2000–2000000 nm | — |
Thickness | 0.01–2 mm | — |
Thickness | 0.02–1 mm | — |
Thickness | 0.05–0.5 mm | — |
Thickness | 2–3 mm | — |
Thickness | 0.5–125 mm | — |
Thickness | 1–25 mm | — |
— | ≤ 10 W | — |
Thickness | ≥ 1 um | — |
Thickness | ≥ 1 mm | — |
— | ≥ 1 W | — |
— | ≥ 1100 W | — |
— | ≥ 1200 W | — |
— | ≥ 1500 W | — |
metal or ceramic substrate
metal substrate
ceramic substrate
FIG.5 is a graph illustrating the thermal interface resistance of a thermal management assembly in accordance with the an embodiment of the present invention …
FIG.6 is a graph illustrating the thermal resistance of thermal management assemblies formed by different manufacturing methods.
| ≥ 1000 W/m-K |
bulk graphene material |
bulk graphene in-plane thermal conductivity range | 1000–1800 W/m-K | bulk graphene material |
through-plane thermal conductivity of assembly with graphene layers perpendicular to substrates | 200–1200 W/m-K | — |
thermal bond thermal resistance upper limit (claim 18) | ≤ 0.00001 K-m2/W | metal-based thermal bond layer |
thermal bond thermal resistance upper limit (claim 19) | ≤ 0.000005 K-m2/W | metal-based thermal bond layer |
thermal bond thermal resistance upper limit (claim 20) | ≤ 0.000001 K-m2/W | metal-based thermal bond layer |
thermal bond thermal resistance upper limit (claim 21) | ≤ 5e-7 K-m2/W | metal-based thermal bond layer |
thermal bond thermal resistance upper limit (claim 22) | ≤ 1e-7 K-m2/W | metal-based thermal bond layer |
TPG in-plane thermal conductivity (description/background) | ≥ 1500 W/m-K | bulk graphene material |
Temperature | 1e-7 K | — |
Thickness | 0.001–1 mm | — |
Thickness | 1–5 mm | — |
Thickness | 1.5–4 mm | — |
Thickness | 2000–2000000 nm | — |
Thickness | 0.01–2 mm | — |
Thickness | 0.02–1 mm | — |
Thickness | 0.05–0.5 mm | — |
Thickness | 2–3 mm | — |
Thickness | 0.5–125 mm | — |
Thickness | 1–25 mm | — |
— | ≤ 10 W | — |
Thickness | ≥ 1 um | — |
Thickness | ≥ 1 mm | — |
— | ≥ 1 W | — |
— | ≥ 1100 W | — |
— | ≥ 1200 W | — |
— | ≥ 1500 W | — |
