Patent
Atlas literature
Patent
US 9,029,774Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A [[SP Dll sin g le p hoton detector (SP D) configured to detect single photons comprising:[[An AP D]] an avalance p hotodiode (AP D) made of I nGaAs/I nP for detecting single photons in the [[NIR]] near infrared (NIR); a bias part for applying a reverse DC bias voltage less than the breakdown voltage of the APD to the cathode of the APD; a gate signal generator for applying a periodic series of bipolar rectangular voltage pulses to the APD; an d a bias tee to superimpose the reverse DC bias voltage and the periodic series of bipolar rectangular voltage pulses for applying to the APD so as to exceed the breakdown voltage of the APD, wherein the q ate si g nal generator com p rises: a p ositive p ulse generator to generate p ositive p ulses with varied amp litude and width; a negative p ulse generator to generate negative p ulses with varied amp litude and width.
The SPD according to claim 1, wherein the gate signal generator oempr-sin g com p rises: Page 2 of 9 SVG 13881274.12-02-2014.I₃A₁YU₄BPXXIFW2.CLM3425499.1.301.160.2248.264.svg 0.347 6.49 Chemistry Black and white amp li tude and width; a negative pulse generator to generate negative pulses with varied amp li tude and width; a digital delay generator to trigger both positive pulse generator and negative pulse generator and set the delay between the generated positive pulse and the generated negative pulse such that the falling edge of the generated positive pulse and the falling edge of the generated negative pulse coincide; and a combiner to combine the generated positive pulses and the generated negative pulses such that the output signal from the combiner is a periodic series of bipolar rectangular voltage pulses.
The SPD according to claim 1, wherein the duty cycle of the gate signal is varied.
The SPD according to claim 1, wherein the amplitude of the gate signal is varied.
A single photon detector comprising: a gate signal generator comprising: a digital delay generator; a positive pulse generator coupled to the digital delay generator in which the positive pulse generator is configured to generate positive pulses with varied amplitude and width; a negative pulse generator coupled to the digital delay generator in which the negative pulse generator is configured to generate negative pulses with varied amplitude and width; a combiner coupled to both the positive and negative pulse generators in which the combiner is configured to combine together the generated positive pulses and the generated negative pulses and to output a gate signal that comprises a periodic series of bipolar rectangular voltage pulses; a bias tee coupled to the gate signal generator and to a DC bias source in which the bias tee is configured to superimpose a reverse DC bias voltage from the DC bias source and the gate signal from the gate signal generator into an input signal; and an avalanche photodiode (APD) coupled to the bias tee in which a cathode of the APD is configured to receive the input signal from the bias tee and an anode of the APD is configured to provide an output signal.
The single photon detector of claim 7, wherein the input signal from the Page 4 of 9 SVG 13881274.12-02-2014.I₃A₁YU₄BPXXIFW2.CLM3425501.1.301.160.2248.264.svg 0.347 6.49 Chemistry Black and white bias tee is configured to exceed a breakdown voltage of the APD.
The single photon detector of claim 7, wherein the DC bias source is configured to applying the reverse DC bias voltage at less than a breakdown voltage of the APD.
The single photon detector of claim 7, wherein the digital delay generator is configured to set a delay between the generated positive pulse and the generated negative pulse such that a falling edge of the generated positive pulse and a falling edge of the generated negative pulse coincide.
The single photon detector of claim 7, wherein the input signal from the bias tee comprises the periodic series of bipolar rectangular voltage pulses which varies between a first voltage (VO) value and a second voltage (V 1) value.
The single photon detector of claim 7, wherein the digital delay generator is configured to act as a time base.
The single photon detector of claim 7, further comprising a resistor coupled to the anode of the APD such that a voltage drop across the resistor can be used to detect a macroscopic current pulse associated with a single absorbed photon in the APD.
Layer stacks claimed or described, ordered top of device to substrate.
Single photon detector (SPD) with InGaAs/InP APD and bipolar rectangular gating signal
Single photon detector with digital delay generator, positive/negative pulse generators, combiner, bias tee, and APD
No layer stack recorded.
Materials described outside the worked examples.
InGaAs/InP avalanche photodiode
InGaAs/InP
Patent
Atlas literature
Patent
US 9,029,774Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A [[SP Dll sin g le p hoton detector (SP D) configured to detect single photons comprising:[[An AP D]] an avalance p hotodiode (AP D) made of I nGaAs/I nP for detecting single photons in the [[NIR]] near infrared (NIR); a bias part for applying a reverse DC bias voltage less than the breakdown voltage of the APD to the cathode of the APD; a gate signal generator for applying a periodic series of bipolar rectangular voltage pulses to the APD; an d a bias tee to superimpose the reverse DC bias voltage and the periodic series of bipolar rectangular voltage pulses for applying to the APD so as to exceed the breakdown voltage of the APD, wherein the q ate si g nal generator com p rises: a p ositive p ulse generator to generate p ositive p ulses with varied amp litude and width; a negative p ulse generator to generate negative p ulses with varied amp litude and width.
The SPD according to claim 1, wherein the gate signal generator oempr-sin g com p rises: Page 2 of 9 SVG 13881274.12-02-2014.I₃A₁YU₄BPXXIFW2.CLM3425499.1.301.160.2248.264.svg 0.347 6.49 Chemistry Black and white amp li tude and width; a negative pulse generator to generate negative pulses with varied amp li tude and width; a digital delay generator to trigger both positive pulse generator and negative pulse generator and set the delay between the generated positive pulse and the generated negative pulse such that the falling edge of the generated positive pulse and the falling edge of the generated negative pulse coincide; and a combiner to combine the generated positive pulses and the generated negative pulses such that the output signal from the combiner is a periodic series of bipolar rectangular voltage pulses.
The SPD according to claim 1, wherein the duty cycle of the gate signal is varied.
The SPD according to claim 1, wherein the amplitude of the gate signal is varied.
A single photon detector comprising: a gate signal generator comprising: a digital delay generator; a positive pulse generator coupled to the digital delay generator in which the positive pulse generator is configured to generate positive pulses with varied amplitude and width; a negative pulse generator coupled to the digital delay generator in which the negative pulse generator is configured to generate negative pulses with varied amplitude and width; a combiner coupled to both the positive and negative pulse generators in which the combiner is configured to combine together the generated positive pulses and the generated negative pulses and to output a gate signal that comprises a periodic series of bipolar rectangular voltage pulses; a bias tee coupled to the gate signal generator and to a DC bias source in which the bias tee is configured to superimpose a reverse DC bias voltage from the DC bias source and the gate signal from the gate signal generator into an input signal; and an avalanche photodiode (APD) coupled to the bias tee in which a cathode of the APD is configured to receive the input signal from the bias tee and an anode of the APD is configured to provide an output signal.
The single photon detector of claim 7, wherein the input signal from the Page 4 of 9 SVG 13881274.12-02-2014.I₃A₁YU₄BPXXIFW2.CLM3425501.1.301.160.2248.264.svg 0.347 6.49 Chemistry Black and white bias tee is configured to exceed a breakdown voltage of the APD.
The single photon detector of claim 7, wherein the DC bias source is configured to applying the reverse DC bias voltage at less than a breakdown voltage of the APD.
The single photon detector of claim 7, wherein the digital delay generator is configured to set a delay between the generated positive pulse and the generated negative pulse such that a falling edge of the generated positive pulse and a falling edge of the generated negative pulse coincide.
The single photon detector of claim 7, wherein the input signal from the bias tee comprises the periodic series of bipolar rectangular voltage pulses which varies between a first voltage (VO) value and a second voltage (V 1) value.
The single photon detector of claim 7, wherein the digital delay generator is configured to act as a time base.
The single photon detector of claim 7, further comprising a resistor coupled to the anode of the APD such that a voltage drop across the resistor can be used to detect a macroscopic current pulse associated with a single absorbed photon in the APD.
Layer stacks claimed or described, ordered top of device to substrate.
Single photon detector (SPD) with InGaAs/InP APD and bipolar rectangular gating signal
Single photon detector with digital delay generator, positive/negative pulse generators, combiner, bias tee, and APD
No layer stack recorded.
Materials described outside the worked examples.
InGaAs/InP avalanche photodiode
InGaAs/InP
Patent
Atlas literature
Patent
US 9,029,774Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A [[SP Dll sin g le p hoton detector (SP D) configured to detect single photons comprising:[[An AP D]] an avalance p hotodiode (AP D) made of I nGaAs/I nP for detecting single photons in the [[NIR]] near infrared (NIR); a bias part for applying a reverse DC bias voltage less than the breakdown voltage of the APD to the cathode of the APD; a gate signal generator for applying a periodic series of bipolar rectangular voltage pulses to the APD; an d a bias tee to superimpose the reverse DC bias voltage and the periodic series of bipolar rectangular voltage pulses for applying to the APD so as to exceed the breakdown voltage of the APD, wherein the q ate si g nal generator com p rises: a p ositive p ulse generator to generate p ositive p ulses with varied amp litude and width; a negative p ulse generator to generate negative p ulses with varied amp litude and width.
The SPD according to claim 1, wherein the gate signal generator oempr-sin g com p rises: Page 2 of 9 SVG 13881274.12-02-2014.I₃A₁YU₄BPXXIFW2.CLM3425499.1.301.160.2248.264.svg 0.347 6.49 Chemistry Black and white amp li tude and width; a negative pulse generator to generate negative pulses with varied amp li tude and width; a digital delay generator to trigger both positive pulse generator and negative pulse generator and set the delay between the generated positive pulse and the generated negative pulse such that the falling edge of the generated positive pulse and the falling edge of the generated negative pulse coincide; and a combiner to combine the generated positive pulses and the generated negative pulses such that the output signal from the combiner is a periodic series of bipolar rectangular voltage pulses.
The SPD according to claim 1, wherein the duty cycle of the gate signal is varied.
The SPD according to claim 1, wherein the amplitude of the gate signal is varied.
A single photon detector comprising: a gate signal generator comprising: a digital delay generator; a positive pulse generator coupled to the digital delay generator in which the positive pulse generator is configured to generate positive pulses with varied amplitude and width; a negative pulse generator coupled to the digital delay generator in which the negative pulse generator is configured to generate negative pulses with varied amplitude and width; a combiner coupled to both the positive and negative pulse generators in which the combiner is configured to combine together the generated positive pulses and the generated negative pulses and to output a gate signal that comprises a periodic series of bipolar rectangular voltage pulses; a bias tee coupled to the gate signal generator and to a DC bias source in which the bias tee is configured to superimpose a reverse DC bias voltage from the DC bias source and the gate signal from the gate signal generator into an input signal; and an avalanche photodiode (APD) coupled to the bias tee in which a cathode of the APD is configured to receive the input signal from the bias tee and an anode of the APD is configured to provide an output signal.
The single photon detector of claim 7, wherein the input signal from the Page 4 of 9 SVG 13881274.12-02-2014.I₃A₁YU₄BPXXIFW2.CLM3425501.1.301.160.2248.264.svg 0.347 6.49 Chemistry Black and white bias tee is configured to exceed a breakdown voltage of the APD.
The single photon detector of claim 7, wherein the DC bias source is configured to applying the reverse DC bias voltage at less than a breakdown voltage of the APD.
The single photon detector of claim 7, wherein the digital delay generator is configured to set a delay between the generated positive pulse and the generated negative pulse such that a falling edge of the generated positive pulse and a falling edge of the generated negative pulse coincide.
The single photon detector of claim 7, wherein the input signal from the bias tee comprises the periodic series of bipolar rectangular voltage pulses which varies between a first voltage (VO) value and a second voltage (V 1) value.
The single photon detector of claim 7, wherein the digital delay generator is configured to act as a time base.
The single photon detector of claim 7, further comprising a resistor coupled to the anode of the APD such that a voltage drop across the resistor can be used to detect a macroscopic current pulse associated with a single absorbed photon in the APD.
Layer stacks claimed or described, ordered top of device to substrate.
Single photon detector (SPD) with InGaAs/InP APD and bipolar rectangular gating signal
Single photon detector with digital delay generator, positive/negative pulse generators, combiner, bias tee, and APD
No layer stack recorded.
Materials described outside the worked examples.
InGaAs/InP avalanche photodiode
InGaAs/InP
Patent
Atlas literature
Patent
US 9,029,774Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A [[SP Dll sin g le p hoton detector (SP D) configured to detect single photons comprising:[[An AP D]] an avalance p hotodiode (AP D) made of I nGaAs/I nP for detecting single photons in the [[NIR]] near infrared (NIR); a bias part for applying a reverse DC bias voltage less than the breakdown voltage of the APD to the cathode of the APD; a gate signal generator for applying a periodic series of bipolar rectangular voltage pulses to the APD; an d a bias tee to superimpose the reverse DC bias voltage and the periodic series of bipolar rectangular voltage pulses for applying to the APD so as to exceed the breakdown voltage of the APD, wherein the q ate si g nal generator com p rises: a p ositive p ulse generator to generate p ositive p ulses with varied amp litude and width; a negative p ulse generator to generate negative p ulses with varied amp litude and width.
The SPD according to claim 1, wherein the gate signal generator oempr-sin g com p rises: Page 2 of 9 SVG 13881274.12-02-2014.I₃A₁YU₄BPXXIFW2.CLM3425499.1.301.160.2248.264.svg 0.347 6.49 Chemistry Black and white amp li tude and width; a negative pulse generator to generate negative pulses with varied amp li tude and width; a digital delay generator to trigger both positive pulse generator and negative pulse generator and set the delay between the generated positive pulse and the generated negative pulse such that the falling edge of the generated positive pulse and the falling edge of the generated negative pulse coincide; and a combiner to combine the generated positive pulses and the generated negative pulses such that the output signal from the combiner is a periodic series of bipolar rectangular voltage pulses.
The SPD according to claim 1, wherein the duty cycle of the gate signal is varied.
The SPD according to claim 1, wherein the amplitude of the gate signal is varied.
A single photon detector comprising: a gate signal generator comprising: a digital delay generator; a positive pulse generator coupled to the digital delay generator in which the positive pulse generator is configured to generate positive pulses with varied amplitude and width; a negative pulse generator coupled to the digital delay generator in which the negative pulse generator is configured to generate negative pulses with varied amplitude and width; a combiner coupled to both the positive and negative pulse generators in which the combiner is configured to combine together the generated positive pulses and the generated negative pulses and to output a gate signal that comprises a periodic series of bipolar rectangular voltage pulses; a bias tee coupled to the gate signal generator and to a DC bias source in which the bias tee is configured to superimpose a reverse DC bias voltage from the DC bias source and the gate signal from the gate signal generator into an input signal; and an avalanche photodiode (APD) coupled to the bias tee in which a cathode of the APD is configured to receive the input signal from the bias tee and an anode of the APD is configured to provide an output signal.
The single photon detector of claim 7, wherein the input signal from the Page 4 of 9 SVG 13881274.12-02-2014.I₃A₁YU₄BPXXIFW2.CLM3425501.1.301.160.2248.264.svg 0.347 6.49 Chemistry Black and white bias tee is configured to exceed a breakdown voltage of the APD.
The single photon detector of claim 7, wherein the DC bias source is configured to applying the reverse DC bias voltage at less than a breakdown voltage of the APD.
The single photon detector of claim 7, wherein the digital delay generator is configured to set a delay between the generated positive pulse and the generated negative pulse such that a falling edge of the generated positive pulse and a falling edge of the generated negative pulse coincide.
The single photon detector of claim 7, wherein the input signal from the bias tee comprises the periodic series of bipolar rectangular voltage pulses which varies between a first voltage (VO) value and a second voltage (V 1) value.
The single photon detector of claim 7, wherein the digital delay generator is configured to act as a time base.
The single photon detector of claim 7, further comprising a resistor coupled to the anode of the APD such that a voltage drop across the resistor can be used to detect a macroscopic current pulse associated with a single absorbed photon in the APD.
Layer stacks claimed or described, ordered top of device to substrate.
Single photon detector (SPD) with InGaAs/InP APD and bipolar rectangular gating signal
Single photon detector with digital delay generator, positive/negative pulse generators, combiner, bias tee, and APD
No layer stack recorded.
Materials described outside the worked examples.
InGaAs/InP avalanche photodiode
InGaAs/InP
