Patent
US 10,204,988Title: GRAPHENE DOUBLE-BARRIER RESONANT T UNN ELING DEVICE 2 hB N hBN
ASTLEY, Michael
30 June 2016·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,204,988Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-13. Canceled
Canceled
An apparatus comprising: a fermion source nanolayer; a first insulating nanolayer; a fermion transport nanolayer; a second insulating nanolayer; a fermion sink nanolayer; a first contact for applying a first voltage to the fermion source nanolayer; a second contact for applying a second voltage to the fermion sink nanolayer; and a transport contact for enabling an electric current via the fermion transport nanolayer; wherein said fermion sink nanolayer is comprised of the same material as said fermion transport nanola y er, wherein the apparatus is configured to be operated with the fermion source nanolayer and the fermion sink nanolayer biased with opposite voltage bias, wherein a current path between the fermion source nanolayer and the fermion transport nanolayer has a negative differential resistance and a current path between the fermion sink nanolayer and the fermion transport nanolayer has a negative differential resistance, enabling a negative absolute resistor. Currently amended
An apparatus as claimed in claim 14, further comprising circuitry configured to control the first voltage at the first contact and second circuitry configured to control the second voltage at the second contact. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer forms a resonant quantum tunnelling fermion source and the fermion sink nanolayer forms a resonant quantum tunnelling fermion sink. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer and the first insulating nanolayer form a first two dimensional quantum well, the fermion sink nanolayer and the second insulating nanolayer form a second two dimensional quantum well and the fermion transport nanolayer forms an intermediate quantum well between the first insulating layer and the second insulating layer. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer, the fermion transport nanolayer and the fermion sink nanolayer are two dimensional semiconductor structures. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer the fermion transport nanolayer and the fermion sink nanolayer are two dimensional Van-der-Waals materials. Previously presented
An apparatus as claimed in claim 14, wherein the first insulating nanolayer and the second insulating nanolayer are two dimensional Van-der-Waals materials. Previously presented
An apparatus as claimed in claim 14, wherein fermion source nanolayer, the fermion transport nanolayer and the fermion sink nanolayer are graphene layers. Previously presented
An apparatus as claimed in claim 14 further comprising a capacitor plate adjacent the fermion source nanolayer configured to apply an electrostatic field to the fermion source nanolayer to dope the fermion source nanolayer relative to the fermion transport nanolayer and/or further comprising a capacitor plate adjacent the fermion sink nanolayer configured to apply an electrostatic field to the fermion sink nanolayer to dope the fermion sink nanolayer relative to the fermion transport nanolayer. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer and the first insulating nanolayer form a two dimensional quantum well. New
An apparatus as claimed in claim 14, wherein the fermion sink nanolayer and the second insulating nanolayer form a two dimensional quantum well. New
A method comprising: biasing a fermion source nanolayer relative to an intermediate fermion transport nanolayer such that the fermion source nanolayer operates as a resonant quantum tunnelling fermion source and provides fermions to the intermediate fermion transport layer; biasing a fermion sink nanolayer relative to the intermediate fermion transport nanolayer such that the fermion sink nanolayer operates as a resonant quantum tunnelling fermion sink and sinks fermions from the intermediate fermion transport layer, wherein said fermion sink nanolayer is comprised of the same material as said fermion transport nanolayer; and controlling the relative bias between the fermion source nanolayer and the fermion sink nanolayer to attain negative absolute resistance for an electric current via the intermediate fermion transport layer. Currently amended
An apparatus comprising, in a single component: a first resonant quantum tunnelling fermion source configured to source fermions from a first node to a fermion transport layer; a second resonant quantum tunnelling fermion sink configured to sink fermions to a second node from the fermion transport layer; a first contact for applying a first voltage to the first node; a second contact for applying a second voltage to the second node; and a transport contact for enabling an electric current via the fermion transport layer; wherein said resonant quantum tunneling fermion sink is comprised of the same material as said fermion transport layer, wherein the apparatus is configured to be operated with the first contact and the second contact biased with opposite voltage bias, wherein a current path between the quantum tunnelling fermion source and the fermion transport layer has a negative differential resistance and a current path between the quantum tunnelling fermion sink and the fermion transport layer has a negative differential resistance, enabling a negative absolute resistor. Previously presented
An apparatus as claimed in claim 26, further comprising circuitry configured to control the first voltage at the first contact and second circuitry configured to control the second voltage at the second contact. Previously presented
An apparatus as claimed in claim 26, wherein the fermion transport layer is an intermediate quantum well separated from the resonant quantum tunnelling fermion source by a first tunnel barrier and separated from the resonant quantum tunnelling fermion sink by a second tunnel barrier. Previously presented
An apparatus as claimed in claim 26, wherein the resonant quantum tunnelling fermion source comprises a first two dimensional quantum well and the resonant quantum tunnelling fermion sink comprises a second two dimensional quantum well. Previously presented
An apparatus as claimed in claim 26, wherein the resonant quantum tunnelling fermion source, the fermion transport layer and the resonant quantum tunnelling fermion sink are two dimensional semiconductor structures. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene double-barrier resonant tunneling device (negative absolute resistor)
Materials described outside the worked examples.
graphene
C
hexagonal boron nitride
hBN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 10 nm | — |
Patent
Atlas literature
Patent
US 10,204,988Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-13. Canceled
Canceled
An apparatus comprising: a fermion source nanolayer; a first insulating nanolayer; a fermion transport nanolayer; a second insulating nanolayer; a fermion sink nanolayer; a first contact for applying a first voltage to the fermion source nanolayer; a second contact for applying a second voltage to the fermion sink nanolayer; and a transport contact for enabling an electric current via the fermion transport nanolayer; wherein said fermion sink nanolayer is comprised of the same material as said fermion transport nanola y er, wherein the apparatus is configured to be operated with the fermion source nanolayer and the fermion sink nanolayer biased with opposite voltage bias, wherein a current path between the fermion source nanolayer and the fermion transport nanolayer has a negative differential resistance and a current path between the fermion sink nanolayer and the fermion transport nanolayer has a negative differential resistance, enabling a negative absolute resistor. Currently amended
An apparatus as claimed in claim 14, further comprising circuitry configured to control the first voltage at the first contact and second circuitry configured to control the second voltage at the second contact. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer forms a resonant quantum tunnelling fermion source and the fermion sink nanolayer forms a resonant quantum tunnelling fermion sink. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer and the first insulating nanolayer form a first two dimensional quantum well, the fermion sink nanolayer and the second insulating nanolayer form a second two dimensional quantum well and the fermion transport nanolayer forms an intermediate quantum well between the first insulating layer and the second insulating layer. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer, the fermion transport nanolayer and the fermion sink nanolayer are two dimensional semiconductor structures. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer the fermion transport nanolayer and the fermion sink nanolayer are two dimensional Van-der-Waals materials. Previously presented
An apparatus as claimed in claim 14, wherein the first insulating nanolayer and the second insulating nanolayer are two dimensional Van-der-Waals materials. Previously presented
An apparatus as claimed in claim 14, wherein fermion source nanolayer, the fermion transport nanolayer and the fermion sink nanolayer are graphene layers. Previously presented
An apparatus as claimed in claim 14 further comprising a capacitor plate adjacent the fermion source nanolayer configured to apply an electrostatic field to the fermion source nanolayer to dope the fermion source nanolayer relative to the fermion transport nanolayer and/or further comprising a capacitor plate adjacent the fermion sink nanolayer configured to apply an electrostatic field to the fermion sink nanolayer to dope the fermion sink nanolayer relative to the fermion transport nanolayer. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer and the first insulating nanolayer form a two dimensional quantum well. New
An apparatus as claimed in claim 14, wherein the fermion sink nanolayer and the second insulating nanolayer form a two dimensional quantum well. New
A method comprising: biasing a fermion source nanolayer relative to an intermediate fermion transport nanolayer such that the fermion source nanolayer operates as a resonant quantum tunnelling fermion source and provides fermions to the intermediate fermion transport layer; biasing a fermion sink nanolayer relative to the intermediate fermion transport nanolayer such that the fermion sink nanolayer operates as a resonant quantum tunnelling fermion sink and sinks fermions from the intermediate fermion transport layer, wherein said fermion sink nanolayer is comprised of the same material as said fermion transport nanolayer; and controlling the relative bias between the fermion source nanolayer and the fermion sink nanolayer to attain negative absolute resistance for an electric current via the intermediate fermion transport layer. Currently amended
An apparatus comprising, in a single component: a first resonant quantum tunnelling fermion source configured to source fermions from a first node to a fermion transport layer; a second resonant quantum tunnelling fermion sink configured to sink fermions to a second node from the fermion transport layer; a first contact for applying a first voltage to the first node; a second contact for applying a second voltage to the second node; and a transport contact for enabling an electric current via the fermion transport layer; wherein said resonant quantum tunneling fermion sink is comprised of the same material as said fermion transport layer, wherein the apparatus is configured to be operated with the first contact and the second contact biased with opposite voltage bias, wherein a current path between the quantum tunnelling fermion source and the fermion transport layer has a negative differential resistance and a current path between the quantum tunnelling fermion sink and the fermion transport layer has a negative differential resistance, enabling a negative absolute resistor. Previously presented
An apparatus as claimed in claim 26, further comprising circuitry configured to control the first voltage at the first contact and second circuitry configured to control the second voltage at the second contact. Previously presented
An apparatus as claimed in claim 26, wherein the fermion transport layer is an intermediate quantum well separated from the resonant quantum tunnelling fermion source by a first tunnel barrier and separated from the resonant quantum tunnelling fermion sink by a second tunnel barrier. Previously presented
An apparatus as claimed in claim 26, wherein the resonant quantum tunnelling fermion source comprises a first two dimensional quantum well and the resonant quantum tunnelling fermion sink comprises a second two dimensional quantum well. Previously presented
An apparatus as claimed in claim 26, wherein the resonant quantum tunnelling fermion source, the fermion transport layer and the resonant quantum tunnelling fermion sink are two dimensional semiconductor structures. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene double-barrier resonant tunneling device (negative absolute resistor)
Materials described outside the worked examples.
graphene
C
hexagonal boron nitride
hBN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 10 nm | — |
Patent
Atlas literature
Patent
US 10,204,988Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-13. Canceled
Canceled
An apparatus comprising: a fermion source nanolayer; a first insulating nanolayer; a fermion transport nanolayer; a second insulating nanolayer; a fermion sink nanolayer; a first contact for applying a first voltage to the fermion source nanolayer; a second contact for applying a second voltage to the fermion sink nanolayer; and a transport contact for enabling an electric current via the fermion transport nanolayer; wherein said fermion sink nanolayer is comprised of the same material as said fermion transport nanola y er, wherein the apparatus is configured to be operated with the fermion source nanolayer and the fermion sink nanolayer biased with opposite voltage bias, wherein a current path between the fermion source nanolayer and the fermion transport nanolayer has a negative differential resistance and a current path between the fermion sink nanolayer and the fermion transport nanolayer has a negative differential resistance, enabling a negative absolute resistor. Currently amended
An apparatus as claimed in claim 14, further comprising circuitry configured to control the first voltage at the first contact and second circuitry configured to control the second voltage at the second contact. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer forms a resonant quantum tunnelling fermion source and the fermion sink nanolayer forms a resonant quantum tunnelling fermion sink. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer and the first insulating nanolayer form a first two dimensional quantum well, the fermion sink nanolayer and the second insulating nanolayer form a second two dimensional quantum well and the fermion transport nanolayer forms an intermediate quantum well between the first insulating layer and the second insulating layer. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer, the fermion transport nanolayer and the fermion sink nanolayer are two dimensional semiconductor structures. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer the fermion transport nanolayer and the fermion sink nanolayer are two dimensional Van-der-Waals materials. Previously presented
An apparatus as claimed in claim 14, wherein the first insulating nanolayer and the second insulating nanolayer are two dimensional Van-der-Waals materials. Previously presented
An apparatus as claimed in claim 14, wherein fermion source nanolayer, the fermion transport nanolayer and the fermion sink nanolayer are graphene layers. Previously presented
An apparatus as claimed in claim 14 further comprising a capacitor plate adjacent the fermion source nanolayer configured to apply an electrostatic field to the fermion source nanolayer to dope the fermion source nanolayer relative to the fermion transport nanolayer and/or further comprising a capacitor plate adjacent the fermion sink nanolayer configured to apply an electrostatic field to the fermion sink nanolayer to dope the fermion sink nanolayer relative to the fermion transport nanolayer. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer and the first insulating nanolayer form a two dimensional quantum well. New
An apparatus as claimed in claim 14, wherein the fermion sink nanolayer and the second insulating nanolayer form a two dimensional quantum well. New
A method comprising: biasing a fermion source nanolayer relative to an intermediate fermion transport nanolayer such that the fermion source nanolayer operates as a resonant quantum tunnelling fermion source and provides fermions to the intermediate fermion transport layer; biasing a fermion sink nanolayer relative to the intermediate fermion transport nanolayer such that the fermion sink nanolayer operates as a resonant quantum tunnelling fermion sink and sinks fermions from the intermediate fermion transport layer, wherein said fermion sink nanolayer is comprised of the same material as said fermion transport nanolayer; and controlling the relative bias between the fermion source nanolayer and the fermion sink nanolayer to attain negative absolute resistance for an electric current via the intermediate fermion transport layer. Currently amended
An apparatus comprising, in a single component: a first resonant quantum tunnelling fermion source configured to source fermions from a first node to a fermion transport layer; a second resonant quantum tunnelling fermion sink configured to sink fermions to a second node from the fermion transport layer; a first contact for applying a first voltage to the first node; a second contact for applying a second voltage to the second node; and a transport contact for enabling an electric current via the fermion transport layer; wherein said resonant quantum tunneling fermion sink is comprised of the same material as said fermion transport layer, wherein the apparatus is configured to be operated with the first contact and the second contact biased with opposite voltage bias, wherein a current path between the quantum tunnelling fermion source and the fermion transport layer has a negative differential resistance and a current path between the quantum tunnelling fermion sink and the fermion transport layer has a negative differential resistance, enabling a negative absolute resistor. Previously presented
An apparatus as claimed in claim 26, further comprising circuitry configured to control the first voltage at the first contact and second circuitry configured to control the second voltage at the second contact. Previously presented
An apparatus as claimed in claim 26, wherein the fermion transport layer is an intermediate quantum well separated from the resonant quantum tunnelling fermion source by a first tunnel barrier and separated from the resonant quantum tunnelling fermion sink by a second tunnel barrier. Previously presented
An apparatus as claimed in claim 26, wherein the resonant quantum tunnelling fermion source comprises a first two dimensional quantum well and the resonant quantum tunnelling fermion sink comprises a second two dimensional quantum well. Previously presented
An apparatus as claimed in claim 26, wherein the resonant quantum tunnelling fermion source, the fermion transport layer and the resonant quantum tunnelling fermion sink are two dimensional semiconductor structures. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene double-barrier resonant tunneling device (negative absolute resistor)
Materials described outside the worked examples.
graphene
C
hexagonal boron nitride
hBN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 10 nm | — |
Patent
Atlas literature
Patent
US 10,204,988Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-13. Canceled
Canceled
An apparatus comprising: a fermion source nanolayer; a first insulating nanolayer; a fermion transport nanolayer; a second insulating nanolayer; a fermion sink nanolayer; a first contact for applying a first voltage to the fermion source nanolayer; a second contact for applying a second voltage to the fermion sink nanolayer; and a transport contact for enabling an electric current via the fermion transport nanolayer; wherein said fermion sink nanolayer is comprised of the same material as said fermion transport nanola y er, wherein the apparatus is configured to be operated with the fermion source nanolayer and the fermion sink nanolayer biased with opposite voltage bias, wherein a current path between the fermion source nanolayer and the fermion transport nanolayer has a negative differential resistance and a current path between the fermion sink nanolayer and the fermion transport nanolayer has a negative differential resistance, enabling a negative absolute resistor. Currently amended
An apparatus as claimed in claim 14, further comprising circuitry configured to control the first voltage at the first contact and second circuitry configured to control the second voltage at the second contact. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer forms a resonant quantum tunnelling fermion source and the fermion sink nanolayer forms a resonant quantum tunnelling fermion sink. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer and the first insulating nanolayer form a first two dimensional quantum well, the fermion sink nanolayer and the second insulating nanolayer form a second two dimensional quantum well and the fermion transport nanolayer forms an intermediate quantum well between the first insulating layer and the second insulating layer. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer, the fermion transport nanolayer and the fermion sink nanolayer are two dimensional semiconductor structures. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer the fermion transport nanolayer and the fermion sink nanolayer are two dimensional Van-der-Waals materials. Previously presented
An apparatus as claimed in claim 14, wherein the first insulating nanolayer and the second insulating nanolayer are two dimensional Van-der-Waals materials. Previously presented
An apparatus as claimed in claim 14, wherein fermion source nanolayer, the fermion transport nanolayer and the fermion sink nanolayer are graphene layers. Previously presented
An apparatus as claimed in claim 14 further comprising a capacitor plate adjacent the fermion source nanolayer configured to apply an electrostatic field to the fermion source nanolayer to dope the fermion source nanolayer relative to the fermion transport nanolayer and/or further comprising a capacitor plate adjacent the fermion sink nanolayer configured to apply an electrostatic field to the fermion sink nanolayer to dope the fermion sink nanolayer relative to the fermion transport nanolayer. Previously presented
An apparatus as claimed in claim 14, wherein the fermion source nanolayer and the first insulating nanolayer form a two dimensional quantum well. New
An apparatus as claimed in claim 14, wherein the fermion sink nanolayer and the second insulating nanolayer form a two dimensional quantum well. New
A method comprising: biasing a fermion source nanolayer relative to an intermediate fermion transport nanolayer such that the fermion source nanolayer operates as a resonant quantum tunnelling fermion source and provides fermions to the intermediate fermion transport layer; biasing a fermion sink nanolayer relative to the intermediate fermion transport nanolayer such that the fermion sink nanolayer operates as a resonant quantum tunnelling fermion sink and sinks fermions from the intermediate fermion transport layer, wherein said fermion sink nanolayer is comprised of the same material as said fermion transport nanolayer; and controlling the relative bias between the fermion source nanolayer and the fermion sink nanolayer to attain negative absolute resistance for an electric current via the intermediate fermion transport layer. Currently amended
An apparatus comprising, in a single component: a first resonant quantum tunnelling fermion source configured to source fermions from a first node to a fermion transport layer; a second resonant quantum tunnelling fermion sink configured to sink fermions to a second node from the fermion transport layer; a first contact for applying a first voltage to the first node; a second contact for applying a second voltage to the second node; and a transport contact for enabling an electric current via the fermion transport layer; wherein said resonant quantum tunneling fermion sink is comprised of the same material as said fermion transport layer, wherein the apparatus is configured to be operated with the first contact and the second contact biased with opposite voltage bias, wherein a current path between the quantum tunnelling fermion source and the fermion transport layer has a negative differential resistance and a current path between the quantum tunnelling fermion sink and the fermion transport layer has a negative differential resistance, enabling a negative absolute resistor. Previously presented
An apparatus as claimed in claim 26, further comprising circuitry configured to control the first voltage at the first contact and second circuitry configured to control the second voltage at the second contact. Previously presented
An apparatus as claimed in claim 26, wherein the fermion transport layer is an intermediate quantum well separated from the resonant quantum tunnelling fermion source by a first tunnel barrier and separated from the resonant quantum tunnelling fermion sink by a second tunnel barrier. Previously presented
An apparatus as claimed in claim 26, wherein the resonant quantum tunnelling fermion source comprises a first two dimensional quantum well and the resonant quantum tunnelling fermion sink comprises a second two dimensional quantum well. Previously presented
An apparatus as claimed in claim 26, wherein the resonant quantum tunnelling fermion source, the fermion transport layer and the resonant quantum tunnelling fermion sink are two dimensional semiconductor structures. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene double-barrier resonant tunneling device (negative absolute resistor)
Materials described outside the worked examples.
graphene
C
hexagonal boron nitride
hBN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 10 nm | — |
double-barrier resonant tunneling device with resonant quantum tunnelling fermion source/sink (single component)
graphene/hBN double-barrier resonant tunneling device (abstract example)
double-barrier resonant tunneling device with resonant quantum tunnelling fermion source/sink (single component)
graphene/hBN double-barrier resonant tunneling device (abstract example)
double-barrier resonant tunneling device with resonant quantum tunnelling fermion source/sink (single component)
graphene/hBN double-barrier resonant tunneling device (abstract example)
double-barrier resonant tunneling device with resonant quantum tunnelling fermion source/sink (single component)
graphene/hBN double-barrier resonant tunneling device (abstract example)