Patent
US 9,281,404THREE-DIMENSIONAL GRAPHENE SWITCHING DEVICE
Jin-seong HEO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,281,404Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view of a three-dimensional graphene switching device 100 according to an example embodiment; [0019]
FIG. 2A is a cross-sectional view taken along line L 1 -L₂ of
FIG. 3 is a plan view illustrating an array structure of a three-dimensional graphene switching device, according to an example embodiment; [0022]
FIGS. 4A and 4B are diagrams illustrating a first modification example of the three- dimensional graphene switching device, according to an example embodiment; …
FIGS. 5A and 5B are diagrams illustrating a second modification example of the three- dimensional graphene switching device, according to an example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A three-dimensional graphene switching device, comprising: first and second electrodes spaced apart from each other on a substrate; a semiconductor layer and a graphene layer between the first electrode and the second electrode, the graphene layer surrounding an end portion of the semiconductor layer; a gate insulation layer surrounding the graphene layer; and a gate surrounding the gate insulation layer, wherein a first end portion of the semiconductor layer contacts a portion of the first electrode, a second end portion of the semiconductor layer is connected to a first end portion of the graphene layer, and a second end portion of the graphene layer contacts a portion of the second electrode.
The three-dimensional graphene switching device of claim 1, wherein the first electrode and the second electrode include one of metal, conductive metal oxide, conductive metal nitride, and polysilicon.
The three-dimensional graphene switching device of claim 1, wherein the semiconductor layer includes one of silicon, germanium, silicon-germanium, Group I II -V semiconductor material, Group I I-VI semiconductor material and an oxide semiconductor.
The three-dimensional graphene switching device of claim 1, wherein an energy bandgap of the semiconductor layer changes with a voltage applied to the gate.
The three-dimensional graphene switching device of claim 1, wherein the graphene layer includes up to four layers of graphene.
A three-dimensional graphene switching device array, comprising: Page 3 Application No.: 13/733,304 Attorney Docket No.: 2557S I -001854-US the three-dimensional graphene switching device of claim 1.
. canceled
The three-dimensional graphene switching device of claim 21, wherein the first end portion of the graphene layer is on an upper side and on lateral sides of the semiconductor layer.
The three-dimensional graphene switching device of Page 2 Application No.: 13/733,304 Attorney Docket No.: 2557 SI -001854-US claim 21, wherein the gate insulation layer is on an upper side and on lateral sides of the graphene layer.
The three-dimensional graphene switching device of claim 4, wherein the gate surrounds an upper side and lateral sides of the gate insulation layer on the second end portion of the semiconductor layer and the first end portion of the graphene layer.
A switching device, comprising: a semiconductor layer on a first region of a substrate; a graphene layer on a second region of the substrate different from the first region, an end portion of the graphene layer covering an end portion of the semiconductor layer on the first region of the substrate; a gate insulating layer over at least the end portion of the graphene layer; and a gate over a portion of the gate insulating layer and the end portion of the graphene layer, wherein the end portion of the graphene layer is on an upper side and on a lateral side of the end portion of the semiconductor layer.
The switching device of claim 11, wherein the gate insulating layer covers the graphene layer.
The switching device of claim 11, further comprising: a first electrode contacting the semiconductor layer; and a second electrode contacting the graphene layer.
The switching device of claim 11, wherein the gate insulation layer is on an upper side and on lateral sides of the graphene layer.
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
three-dimensional graphene switching device
Materials described outside the worked examples.
graphene layer
semiconductor layer
Patent
Atlas literature
Patent
US 9,281,404Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view of a three-dimensional graphene switching device 100 according to an example embodiment; [0019]
FIG. 2A is a cross-sectional view taken along line L 1 -L₂ of
FIG. 3 is a plan view illustrating an array structure of a three-dimensional graphene switching device, according to an example embodiment; [0022]
FIGS. 4A and 4B are diagrams illustrating a first modification example of the three- dimensional graphene switching device, according to an example embodiment; …
FIGS. 5A and 5B are diagrams illustrating a second modification example of the three- dimensional graphene switching device, according to an example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A three-dimensional graphene switching device, comprising: first and second electrodes spaced apart from each other on a substrate; a semiconductor layer and a graphene layer between the first electrode and the second electrode, the graphene layer surrounding an end portion of the semiconductor layer; a gate insulation layer surrounding the graphene layer; and a gate surrounding the gate insulation layer, wherein a first end portion of the semiconductor layer contacts a portion of the first electrode, a second end portion of the semiconductor layer is connected to a first end portion of the graphene layer, and a second end portion of the graphene layer contacts a portion of the second electrode.
The three-dimensional graphene switching device of claim 1, wherein the first electrode and the second electrode include one of metal, conductive metal oxide, conductive metal nitride, and polysilicon.
The three-dimensional graphene switching device of claim 1, wherein the semiconductor layer includes one of silicon, germanium, silicon-germanium, Group I II -V semiconductor material, Group I I-VI semiconductor material and an oxide semiconductor.
The three-dimensional graphene switching device of claim 1, wherein an energy bandgap of the semiconductor layer changes with a voltage applied to the gate.
The three-dimensional graphene switching device of claim 1, wherein the graphene layer includes up to four layers of graphene.
A three-dimensional graphene switching device array, comprising: Page 3 Application No.: 13/733,304 Attorney Docket No.: 2557S I -001854-US the three-dimensional graphene switching device of claim 1.
. canceled
The three-dimensional graphene switching device of claim 21, wherein the first end portion of the graphene layer is on an upper side and on lateral sides of the semiconductor layer.
The three-dimensional graphene switching device of Page 2 Application No.: 13/733,304 Attorney Docket No.: 2557 SI -001854-US claim 21, wherein the gate insulation layer is on an upper side and on lateral sides of the graphene layer.
The three-dimensional graphene switching device of claim 4, wherein the gate surrounds an upper side and lateral sides of the gate insulation layer on the second end portion of the semiconductor layer and the first end portion of the graphene layer.
A switching device, comprising: a semiconductor layer on a first region of a substrate; a graphene layer on a second region of the substrate different from the first region, an end portion of the graphene layer covering an end portion of the semiconductor layer on the first region of the substrate; a gate insulating layer over at least the end portion of the graphene layer; and a gate over a portion of the gate insulating layer and the end portion of the graphene layer, wherein the end portion of the graphene layer is on an upper side and on a lateral side of the end portion of the semiconductor layer.
The switching device of claim 11, wherein the gate insulating layer covers the graphene layer.
The switching device of claim 11, further comprising: a first electrode contacting the semiconductor layer; and a second electrode contacting the graphene layer.
The switching device of claim 11, wherein the gate insulation layer is on an upper side and on lateral sides of the graphene layer.
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
three-dimensional graphene switching device
Materials described outside the worked examples.
graphene layer
semiconductor layer
Patent
Atlas literature
Patent
US 9,281,404Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view of a three-dimensional graphene switching device 100 according to an example embodiment; [0019]
FIG. 2A is a cross-sectional view taken along line L 1 -L₂ of
FIG. 3 is a plan view illustrating an array structure of a three-dimensional graphene switching device, according to an example embodiment; [0022]
FIGS. 4A and 4B are diagrams illustrating a first modification example of the three- dimensional graphene switching device, according to an example embodiment; …
FIGS. 5A and 5B are diagrams illustrating a second modification example of the three- dimensional graphene switching device, according to an example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A three-dimensional graphene switching device, comprising: first and second electrodes spaced apart from each other on a substrate; a semiconductor layer and a graphene layer between the first electrode and the second electrode, the graphene layer surrounding an end portion of the semiconductor layer; a gate insulation layer surrounding the graphene layer; and a gate surrounding the gate insulation layer, wherein a first end portion of the semiconductor layer contacts a portion of the first electrode, a second end portion of the semiconductor layer is connected to a first end portion of the graphene layer, and a second end portion of the graphene layer contacts a portion of the second electrode.
The three-dimensional graphene switching device of claim 1, wherein the first electrode and the second electrode include one of metal, conductive metal oxide, conductive metal nitride, and polysilicon.
The three-dimensional graphene switching device of claim 1, wherein the semiconductor layer includes one of silicon, germanium, silicon-germanium, Group I II -V semiconductor material, Group I I-VI semiconductor material and an oxide semiconductor.
The three-dimensional graphene switching device of claim 1, wherein an energy bandgap of the semiconductor layer changes with a voltage applied to the gate.
The three-dimensional graphene switching device of claim 1, wherein the graphene layer includes up to four layers of graphene.
A three-dimensional graphene switching device array, comprising: Page 3 Application No.: 13/733,304 Attorney Docket No.: 2557S I -001854-US the three-dimensional graphene switching device of claim 1.
. canceled
The three-dimensional graphene switching device of claim 21, wherein the first end portion of the graphene layer is on an upper side and on lateral sides of the semiconductor layer.
The three-dimensional graphene switching device of Page 2 Application No.: 13/733,304 Attorney Docket No.: 2557 SI -001854-US claim 21, wherein the gate insulation layer is on an upper side and on lateral sides of the graphene layer.
The three-dimensional graphene switching device of claim 4, wherein the gate surrounds an upper side and lateral sides of the gate insulation layer on the second end portion of the semiconductor layer and the first end portion of the graphene layer.
A switching device, comprising: a semiconductor layer on a first region of a substrate; a graphene layer on a second region of the substrate different from the first region, an end portion of the graphene layer covering an end portion of the semiconductor layer on the first region of the substrate; a gate insulating layer over at least the end portion of the graphene layer; and a gate over a portion of the gate insulating layer and the end portion of the graphene layer, wherein the end portion of the graphene layer is on an upper side and on a lateral side of the end portion of the semiconductor layer.
The switching device of claim 11, wherein the gate insulating layer covers the graphene layer.
The switching device of claim 11, further comprising: a first electrode contacting the semiconductor layer; and a second electrode contacting the graphene layer.
The switching device of claim 11, wherein the gate insulation layer is on an upper side and on lateral sides of the graphene layer.
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
three-dimensional graphene switching device
Materials described outside the worked examples.
graphene layer
semiconductor layer
Patent
Atlas literature
Patent
US 9,281,404Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a perspective view of a three-dimensional graphene switching device 100 according to an example embodiment; [0019]
FIG. 2A is a cross-sectional view taken along line L 1 -L₂ of
FIG. 3 is a plan view illustrating an array structure of a three-dimensional graphene switching device, according to an example embodiment; [0022]
FIGS. 4A and 4B are diagrams illustrating a first modification example of the three- dimensional graphene switching device, according to an example embodiment; …
FIGS. 5A and 5B are diagrams illustrating a second modification example of the three- dimensional graphene switching device, according to an example embodiment.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A three-dimensional graphene switching device, comprising: first and second electrodes spaced apart from each other on a substrate; a semiconductor layer and a graphene layer between the first electrode and the second electrode, the graphene layer surrounding an end portion of the semiconductor layer; a gate insulation layer surrounding the graphene layer; and a gate surrounding the gate insulation layer, wherein a first end portion of the semiconductor layer contacts a portion of the first electrode, a second end portion of the semiconductor layer is connected to a first end portion of the graphene layer, and a second end portion of the graphene layer contacts a portion of the second electrode.
The three-dimensional graphene switching device of claim 1, wherein the first electrode and the second electrode include one of metal, conductive metal oxide, conductive metal nitride, and polysilicon.
The three-dimensional graphene switching device of claim 1, wherein the semiconductor layer includes one of silicon, germanium, silicon-germanium, Group I II -V semiconductor material, Group I I-VI semiconductor material and an oxide semiconductor.
The three-dimensional graphene switching device of claim 1, wherein an energy bandgap of the semiconductor layer changes with a voltage applied to the gate.
The three-dimensional graphene switching device of claim 1, wherein the graphene layer includes up to four layers of graphene.
A three-dimensional graphene switching device array, comprising: Page 3 Application No.: 13/733,304 Attorney Docket No.: 2557S I -001854-US the three-dimensional graphene switching device of claim 1.
. canceled
The three-dimensional graphene switching device of claim 21, wherein the first end portion of the graphene layer is on an upper side and on lateral sides of the semiconductor layer.
The three-dimensional graphene switching device of Page 2 Application No.: 13/733,304 Attorney Docket No.: 2557 SI -001854-US claim 21, wherein the gate insulation layer is on an upper side and on lateral sides of the graphene layer.
The three-dimensional graphene switching device of claim 4, wherein the gate surrounds an upper side and lateral sides of the gate insulation layer on the second end portion of the semiconductor layer and the first end portion of the graphene layer.
A switching device, comprising: a semiconductor layer on a first region of a substrate; a graphene layer on a second region of the substrate different from the first region, an end portion of the graphene layer covering an end portion of the semiconductor layer on the first region of the substrate; a gate insulating layer over at least the end portion of the graphene layer; and a gate over a portion of the gate insulating layer and the end portion of the graphene layer, wherein the end portion of the graphene layer is on an upper side and on a lateral side of the end portion of the semiconductor layer.
The switching device of claim 11, wherein the gate insulating layer covers the graphene layer.
The switching device of claim 11, further comprising: a first electrode contacting the semiconductor layer; and a second electrode contacting the graphene layer.
The switching device of claim 11, wherein the gate insulation layer is on an upper side and on lateral sides of the graphene layer.
. canceled
Layer stacks claimed or described, ordered top of device to substrate.
three-dimensional graphene switching device
Materials described outside the worked examples.
graphene layer
semiconductor layer
three-dimensional graphene switching device array
No layer stack recorded.
switching device (graphene/semiconductor heterojunction)
electrode material
gate insulation layer
three-dimensional graphene switching device array
No layer stack recorded.
switching device (graphene/semiconductor heterojunction)
electrode material
gate insulation layer
three-dimensional graphene switching device array
No layer stack recorded.
switching device (graphene/semiconductor heterojunction)
electrode material
gate insulation layer
three-dimensional graphene switching device array
No layer stack recorded.
switching device (graphene/semiconductor heterojunction)
electrode material
gate insulation layer