Patent
US 10,297,700THERMAL DETECTORS USING GRAPHENE AND OXIDES OF GRAPHENE AND METHODS OF MAKING THE SAME
Elwood J. Egerton, Ashok K. Sood
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,297,700Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene based detector comprising: a thin film of graphene suspended between electrical contacts; first and second conductive terminals in electrical communication with the thin film of graphene; wherein the thin film of graphene is tuned such that exposure of radiation induces a change in impedance between the first and second conductive terminals which is sensed by CMOS readout circuitry. wherein the thin film of graphene nanoribbon is tuned to increase the sensitivity of the detector by exposing the graphene nanoribbon to an oxidation environment at a predetermined temperature, which thereby increases the thermal coefficient of resistance (TCR) to excess of 4 percent per degree centigrade and up to 6 percent per degree centigrade, thereby resulting in a Noise Equivalent Delta Temperature (NEDT) of less than lO mK. Currently amended
The graphene based detector of claim 1 further comprising sensing circuitry for detecting changes in input impedance using the CMOS readout circuitry. Original
The graphene based detector of claim 1 wherein the thin film of graphene is tuned to be sensitive to Infrared (IR) radiation in the micron band of 1 to 12 microns and the radiation that induces the change in impedance comprises IR radiation. Original
The graphene based detector of claim 1 wherein the thin film of graphene is tuned to be responsive to a selected functionalization molecular species, to achieve responsivity to Ultraviolet (UV) or Terahertz (T HZ) radiation. Original
1 5. 1 6. The graphene based detector of claim 1 wherein the thin film of 2 graphene is deposited on a substrate having an insulating layer comprised of dielectric material with a cantilever beam composed of silicon nitride, which is suspended over a channel, thereby providing thermal isolation from surrounding environments. Original
The graphene based detector of claim 1 wherein the thin film of graphene is deposited on vanadium oxide and amorphous silicon to assist in the improvement of photon absorption. Original
The graphene based detector of claim 1 wherein the first and second conductive terminals comprise one of: palladium and platinum, thereby enhancing the pi bonding to the thin film of graphene and reducing contact resistance. Original
The graphene based detector of claim 1 wherein the thin film of graphene is optimized for wavelength absorption by use of functionalization molecules or nanoparticles tuned to a predetermined wavelength. Original
Canceled
11-15. Canceled
Canceled
A graphene based detector comprising: a thin film of graphene suspended between electrical contacts; first and second conductive terminals in electrical communication with the thin film of graphene; wherein the thin film of graphene is tuned such that exposure of radiation induces a change in impedance between the first and second conductive terminals; wherein the thin film of graphene nanoribbon is tuned to increase the sensitivity 8 of the detector by exposing the graphene nanoribbon to an oxidation environment at a 9 predetermined temperature, which thereby increases the thermal coefficient of resistance (TCR) to excess of 4 percent per degree centigrade and up to 6 percent per degree centigrade, thereby resulting in a Noise Equivalent Delta Temperature (NEDT) of less than lO mK. New
The graphene based detector of claim 16 further comprising sensing circuitry for detecting changes in input impedance using the CMOS readout circuitry. New
The graphene based detector of claim 16 wherein the thin film of graphene is tuned to be sensitive to Infrared (IR) radiation in the micron band of 1 to 12 microns and the radiation that induces the change in impedance comprises I R radiation. New
The graphene based detector of claim 16 wherein the thin film of graphene is tuned to be responsive to a selected functionalization molecular species, to achieve responsivity to Ultraviolet (UV) or Terahertz (THZ) radiation. New
The graphene based detector of claim 16 wherein the thin film of graphene is deposited on a substrate having an insulating layer comprised of dielectric material with a cantilever beam composed of silicon nitride, which is suspended over a channel, thereby providing thermal isolation from surrounding environments. New
The graphene based detector of claim 16 wherein the thin film of graphene is deposited on vanadium oxide and amorphous silicon to assist in the improvement of photon absorption. New
The graphene based detector of claim 16 wherein comprise one of: palladium and platinum, thereby graphene and reducing contact resistance. New
1 23. The graphene based detector of claim 16 optimized for wavelength absorption by use of tuned to a predetermined wavelength. New the first and second conductive terminals enhancing the pi 3 bonding to the thin film of wherein the thin film of graphene 2 is functionalization molecules or 3 nanoparticles
Layer stacks claimed or described, ordered top of device to substrate.
graphene based microbolometer detector (claim 1 family)
graphene based microbolometer detector (claim 16 family)
Materials described outside the worked examples.
graphene nanoribbon
oxidized graphene nanoribbon
silicon nitride
Si₃N₄
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermal coefficient of resistance (TCR) after oxidation tuning | 4–6 | oxidized graphene nanoribbon |
Noise Equivalent Delta Temperature (NEDT) | ≤ 10 |
Patent
Atlas literature
Patent
US 10,297,700Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene based detector comprising: a thin film of graphene suspended between electrical contacts; first and second conductive terminals in electrical communication with the thin film of graphene; wherein the thin film of graphene is tuned such that exposure of radiation induces a change in impedance between the first and second conductive terminals which is sensed by CMOS readout circuitry. wherein the thin film of graphene nanoribbon is tuned to increase the sensitivity of the detector by exposing the graphene nanoribbon to an oxidation environment at a predetermined temperature, which thereby increases the thermal coefficient of resistance (TCR) to excess of 4 percent per degree centigrade and up to 6 percent per degree centigrade, thereby resulting in a Noise Equivalent Delta Temperature (NEDT) of less than lO mK. Currently amended
The graphene based detector of claim 1 further comprising sensing circuitry for detecting changes in input impedance using the CMOS readout circuitry. Original
The graphene based detector of claim 1 wherein the thin film of graphene is tuned to be sensitive to Infrared (IR) radiation in the micron band of 1 to 12 microns and the radiation that induces the change in impedance comprises IR radiation. Original
The graphene based detector of claim 1 wherein the thin film of graphene is tuned to be responsive to a selected functionalization molecular species, to achieve responsivity to Ultraviolet (UV) or Terahertz (T HZ) radiation. Original
1 5. 1 6. The graphene based detector of claim 1 wherein the thin film of 2 graphene is deposited on a substrate having an insulating layer comprised of dielectric material with a cantilever beam composed of silicon nitride, which is suspended over a channel, thereby providing thermal isolation from surrounding environments. Original
The graphene based detector of claim 1 wherein the thin film of graphene is deposited on vanadium oxide and amorphous silicon to assist in the improvement of photon absorption. Original
The graphene based detector of claim 1 wherein the first and second conductive terminals comprise one of: palladium and platinum, thereby enhancing the pi bonding to the thin film of graphene and reducing contact resistance. Original
The graphene based detector of claim 1 wherein the thin film of graphene is optimized for wavelength absorption by use of functionalization molecules or nanoparticles tuned to a predetermined wavelength. Original
Canceled
11-15. Canceled
Canceled
A graphene based detector comprising: a thin film of graphene suspended between electrical contacts; first and second conductive terminals in electrical communication with the thin film of graphene; wherein the thin film of graphene is tuned such that exposure of radiation induces a change in impedance between the first and second conductive terminals; wherein the thin film of graphene nanoribbon is tuned to increase the sensitivity 8 of the detector by exposing the graphene nanoribbon to an oxidation environment at a 9 predetermined temperature, which thereby increases the thermal coefficient of resistance (TCR) to excess of 4 percent per degree centigrade and up to 6 percent per degree centigrade, thereby resulting in a Noise Equivalent Delta Temperature (NEDT) of less than lO mK. New
The graphene based detector of claim 16 further comprising sensing circuitry for detecting changes in input impedance using the CMOS readout circuitry. New
The graphene based detector of claim 16 wherein the thin film of graphene is tuned to be sensitive to Infrared (IR) radiation in the micron band of 1 to 12 microns and the radiation that induces the change in impedance comprises I R radiation. New
The graphene based detector of claim 16 wherein the thin film of graphene is tuned to be responsive to a selected functionalization molecular species, to achieve responsivity to Ultraviolet (UV) or Terahertz (THZ) radiation. New
The graphene based detector of claim 16 wherein the thin film of graphene is deposited on a substrate having an insulating layer comprised of dielectric material with a cantilever beam composed of silicon nitride, which is suspended over a channel, thereby providing thermal isolation from surrounding environments. New
The graphene based detector of claim 16 wherein the thin film of graphene is deposited on vanadium oxide and amorphous silicon to assist in the improvement of photon absorption. New
The graphene based detector of claim 16 wherein comprise one of: palladium and platinum, thereby graphene and reducing contact resistance. New
1 23. The graphene based detector of claim 16 optimized for wavelength absorption by use of tuned to a predetermined wavelength. New the first and second conductive terminals enhancing the pi 3 bonding to the thin film of wherein the thin film of graphene 2 is functionalization molecules or 3 nanoparticles
Layer stacks claimed or described, ordered top of device to substrate.
graphene based microbolometer detector (claim 1 family)
graphene based microbolometer detector (claim 16 family)
Materials described outside the worked examples.
graphene nanoribbon
oxidized graphene nanoribbon
silicon nitride
Si₃N₄
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermal coefficient of resistance (TCR) after oxidation tuning | 4–6 | oxidized graphene nanoribbon |
Noise Equivalent Delta Temperature (NEDT) | ≤ 10 |
Patent
Atlas literature
Patent
US 10,297,700Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene based detector comprising: a thin film of graphene suspended between electrical contacts; first and second conductive terminals in electrical communication with the thin film of graphene; wherein the thin film of graphene is tuned such that exposure of radiation induces a change in impedance between the first and second conductive terminals which is sensed by CMOS readout circuitry. wherein the thin film of graphene nanoribbon is tuned to increase the sensitivity of the detector by exposing the graphene nanoribbon to an oxidation environment at a predetermined temperature, which thereby increases the thermal coefficient of resistance (TCR) to excess of 4 percent per degree centigrade and up to 6 percent per degree centigrade, thereby resulting in a Noise Equivalent Delta Temperature (NEDT) of less than lO mK. Currently amended
The graphene based detector of claim 1 further comprising sensing circuitry for detecting changes in input impedance using the CMOS readout circuitry. Original
The graphene based detector of claim 1 wherein the thin film of graphene is tuned to be sensitive to Infrared (IR) radiation in the micron band of 1 to 12 microns and the radiation that induces the change in impedance comprises IR radiation. Original
The graphene based detector of claim 1 wherein the thin film of graphene is tuned to be responsive to a selected functionalization molecular species, to achieve responsivity to Ultraviolet (UV) or Terahertz (T HZ) radiation. Original
1 5. 1 6. The graphene based detector of claim 1 wherein the thin film of 2 graphene is deposited on a substrate having an insulating layer comprised of dielectric material with a cantilever beam composed of silicon nitride, which is suspended over a channel, thereby providing thermal isolation from surrounding environments. Original
The graphene based detector of claim 1 wherein the thin film of graphene is deposited on vanadium oxide and amorphous silicon to assist in the improvement of photon absorption. Original
The graphene based detector of claim 1 wherein the first and second conductive terminals comprise one of: palladium and platinum, thereby enhancing the pi bonding to the thin film of graphene and reducing contact resistance. Original
The graphene based detector of claim 1 wherein the thin film of graphene is optimized for wavelength absorption by use of functionalization molecules or nanoparticles tuned to a predetermined wavelength. Original
Canceled
11-15. Canceled
Canceled
A graphene based detector comprising: a thin film of graphene suspended between electrical contacts; first and second conductive terminals in electrical communication with the thin film of graphene; wherein the thin film of graphene is tuned such that exposure of radiation induces a change in impedance between the first and second conductive terminals; wherein the thin film of graphene nanoribbon is tuned to increase the sensitivity 8 of the detector by exposing the graphene nanoribbon to an oxidation environment at a 9 predetermined temperature, which thereby increases the thermal coefficient of resistance (TCR) to excess of 4 percent per degree centigrade and up to 6 percent per degree centigrade, thereby resulting in a Noise Equivalent Delta Temperature (NEDT) of less than lO mK. New
The graphene based detector of claim 16 further comprising sensing circuitry for detecting changes in input impedance using the CMOS readout circuitry. New
The graphene based detector of claim 16 wherein the thin film of graphene is tuned to be sensitive to Infrared (IR) radiation in the micron band of 1 to 12 microns and the radiation that induces the change in impedance comprises I R radiation. New
The graphene based detector of claim 16 wherein the thin film of graphene is tuned to be responsive to a selected functionalization molecular species, to achieve responsivity to Ultraviolet (UV) or Terahertz (THZ) radiation. New
The graphene based detector of claim 16 wherein the thin film of graphene is deposited on a substrate having an insulating layer comprised of dielectric material with a cantilever beam composed of silicon nitride, which is suspended over a channel, thereby providing thermal isolation from surrounding environments. New
The graphene based detector of claim 16 wherein the thin film of graphene is deposited on vanadium oxide and amorphous silicon to assist in the improvement of photon absorption. New
The graphene based detector of claim 16 wherein comprise one of: palladium and platinum, thereby graphene and reducing contact resistance. New
1 23. The graphene based detector of claim 16 optimized for wavelength absorption by use of tuned to a predetermined wavelength. New the first and second conductive terminals enhancing the pi 3 bonding to the thin film of wherein the thin film of graphene 2 is functionalization molecules or 3 nanoparticles
Layer stacks claimed or described, ordered top of device to substrate.
graphene based microbolometer detector (claim 1 family)
graphene based microbolometer detector (claim 16 family)
Materials described outside the worked examples.
graphene nanoribbon
oxidized graphene nanoribbon
silicon nitride
Si₃N₄
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermal coefficient of resistance (TCR) after oxidation tuning | 4–6 | oxidized graphene nanoribbon |
Noise Equivalent Delta Temperature (NEDT) | ≤ 10 |
Patent
Atlas literature
Patent
US 10,297,700Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene based detector comprising: a thin film of graphene suspended between electrical contacts; first and second conductive terminals in electrical communication with the thin film of graphene; wherein the thin film of graphene is tuned such that exposure of radiation induces a change in impedance between the first and second conductive terminals which is sensed by CMOS readout circuitry. wherein the thin film of graphene nanoribbon is tuned to increase the sensitivity of the detector by exposing the graphene nanoribbon to an oxidation environment at a predetermined temperature, which thereby increases the thermal coefficient of resistance (TCR) to excess of 4 percent per degree centigrade and up to 6 percent per degree centigrade, thereby resulting in a Noise Equivalent Delta Temperature (NEDT) of less than lO mK. Currently amended
The graphene based detector of claim 1 further comprising sensing circuitry for detecting changes in input impedance using the CMOS readout circuitry. Original
The graphene based detector of claim 1 wherein the thin film of graphene is tuned to be sensitive to Infrared (IR) radiation in the micron band of 1 to 12 microns and the radiation that induces the change in impedance comprises IR radiation. Original
The graphene based detector of claim 1 wherein the thin film of graphene is tuned to be responsive to a selected functionalization molecular species, to achieve responsivity to Ultraviolet (UV) or Terahertz (T HZ) radiation. Original
1 5. 1 6. The graphene based detector of claim 1 wherein the thin film of 2 graphene is deposited on a substrate having an insulating layer comprised of dielectric material with a cantilever beam composed of silicon nitride, which is suspended over a channel, thereby providing thermal isolation from surrounding environments. Original
The graphene based detector of claim 1 wherein the thin film of graphene is deposited on vanadium oxide and amorphous silicon to assist in the improvement of photon absorption. Original
The graphene based detector of claim 1 wherein the first and second conductive terminals comprise one of: palladium and platinum, thereby enhancing the pi bonding to the thin film of graphene and reducing contact resistance. Original
The graphene based detector of claim 1 wherein the thin film of graphene is optimized for wavelength absorption by use of functionalization molecules or nanoparticles tuned to a predetermined wavelength. Original
Canceled
11-15. Canceled
Canceled
A graphene based detector comprising: a thin film of graphene suspended between electrical contacts; first and second conductive terminals in electrical communication with the thin film of graphene; wherein the thin film of graphene is tuned such that exposure of radiation induces a change in impedance between the first and second conductive terminals; wherein the thin film of graphene nanoribbon is tuned to increase the sensitivity 8 of the detector by exposing the graphene nanoribbon to an oxidation environment at a 9 predetermined temperature, which thereby increases the thermal coefficient of resistance (TCR) to excess of 4 percent per degree centigrade and up to 6 percent per degree centigrade, thereby resulting in a Noise Equivalent Delta Temperature (NEDT) of less than lO mK. New
The graphene based detector of claim 16 further comprising sensing circuitry for detecting changes in input impedance using the CMOS readout circuitry. New
The graphene based detector of claim 16 wherein the thin film of graphene is tuned to be sensitive to Infrared (IR) radiation in the micron band of 1 to 12 microns and the radiation that induces the change in impedance comprises I R radiation. New
The graphene based detector of claim 16 wherein the thin film of graphene is tuned to be responsive to a selected functionalization molecular species, to achieve responsivity to Ultraviolet (UV) or Terahertz (THZ) radiation. New
The graphene based detector of claim 16 wherein the thin film of graphene is deposited on a substrate having an insulating layer comprised of dielectric material with a cantilever beam composed of silicon nitride, which is suspended over a channel, thereby providing thermal isolation from surrounding environments. New
The graphene based detector of claim 16 wherein the thin film of graphene is deposited on vanadium oxide and amorphous silicon to assist in the improvement of photon absorption. New
The graphene based detector of claim 16 wherein comprise one of: palladium and platinum, thereby graphene and reducing contact resistance. New
1 23. The graphene based detector of claim 16 optimized for wavelength absorption by use of tuned to a predetermined wavelength. New the first and second conductive terminals enhancing the pi 3 bonding to the thin film of wherein the thin film of graphene 2 is functionalization molecules or 3 nanoparticles
Layer stacks claimed or described, ordered top of device to substrate.
graphene based microbolometer detector (claim 1 family)
graphene based microbolometer detector (claim 16 family)
Materials described outside the worked examples.
graphene nanoribbon
oxidized graphene nanoribbon
silicon nitride
Si₃N₄
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
thermal coefficient of resistance (TCR) after oxidation tuning | 4–6 | oxidized graphene nanoribbon |
Noise Equivalent Delta Temperature (NEDT) | ≤ 10 |
graphene IR detector on CMOS wafer
vanadium oxide
VOx
amorphous silicon
a-Si
palladium
Pd
platinum
Pt
silicon oxide
SiO₂
prior art vanadium oxide TCR (background reference) | ≤ 2 | VOx |
Thickness | 50–250 nm | — |
Thickness | 1–12 µm | — |
graphene IR detector on CMOS wafer
vanadium oxide
VOx
amorphous silicon
a-Si
palladium
Pd
platinum
Pt
silicon oxide
SiO₂
prior art vanadium oxide TCR (background reference) | ≤ 2 | VOx |
Thickness | 50–250 nm | — |
Thickness | 1–12 µm | — |
graphene IR detector on CMOS wafer
vanadium oxide
VOx
amorphous silicon
a-Si
palladium
Pd
platinum
Pt
silicon oxide
SiO₂
prior art vanadium oxide TCR (background reference) | ≤ 2 | VOx |
Thickness | 50–250 nm | — |
Thickness | 1–12 µm | — |
graphene IR detector on CMOS wafer
vanadium oxide
VOx
amorphous silicon
a-Si
palladium
Pd
platinum
Pt
silicon oxide
SiO₂
prior art vanadium oxide TCR (background reference) | ≤ 2 | VOx |
Thickness | 50–250 nm | — |
Thickness | 1–12 µm | — |