Patent
US 10,770,289Systems and Methods for Graphene Based Layer Transfer
Jeehwan KIM
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,770,289Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1D shows that an epilayer 140 (e.g., a single crystalline film to have high electrical and optical device performance) is then fabricated on the graphene …
FIG. 2 are for illustrative purposes only. In practice, other materials with similar lattice mismatches with respect to graphene can also be used to form the …
FIG. 3D, the devices made of the epilayer 330 can have higher electron or hole mobility. AN optoelectronic device made of the epilayer 330 can also have an …
FIG. 4A. In this case, the graphene layer 421 includes only a single monolayer of graphene (i.e., the graphene layer 421 is one atom thick) and the potential …
FIG. 5 A, a donor wafer 51 0 a is provided to grow a graphene layer 520 (shown in FIG. S B). FIG. S B shows that the graphene layer 520 is then transferred to …
FIG. 6B). This implies that the substrate right below the graphene layer plays a role in determining epitaxial orientation. Accordingly, the material (or the …
FIGS. 7A-7C show schematics of three different types of graphene-based layer fabrication systems using graphene layers of different thicknesses. In applications, …
FIG. 8B. The porous film 830 has a high density of pinholes (e.g., about one hole per square micron). Alternatively, the porous film 830 can include any film with …
FIGS. 9A and 9B are scanning electron microscopy (SEM) images of the Ge and GaAs films, respectively, grown on damaged graphene. Although pits appear on the …
FIGS. 10 A and lO B are SEM images of the Ge and GaAs films shown in
FIG. 11G. The stressor layer 1160 is in contact with the second target substrate 1135 and the LED stack 1140 is exposed for further processing. For example,
FIG. 12B. The Ge film 1620 then functions as seed to grow a graphene layer 1630 epitaxially, as seen in
FIG. 13A. The graphene layer 1320 can be transferred to the glass substrate 1310 via any method described in this application or any other method known in the …
FIG. 14B. An A 1 203 layer 1470 is then deposited on the InGaAs layer 1430 as the top gate dielectric. A gate 1480 is fabricated on the A 1 203 layer 1470 to …
FIGS. 15A-15F illustrate a method of hetero-integration using a graphene-based layer fabrication and transfer technique. [0032]
FIG. 16C. The graphene layer 1630 can include single crystalline graphene. [0106] In
FIG. 1610. [0107] Conclusion [0108] While various inventive embodiments have been described and illustrated herein, those of ordinary skill in the art will …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-24. Canceled
Canceled
A method, comprising: forming a single-crystalline film on a continuous graphene layer that is on a substrate, wherein forming the single-crystalline film on the graphene layer comprises using the substrate as a seed for the single-crystalline film; and separating the single-crystalline film and the substrate. Previously presented
The method of claim 25, further comprising forming the graphene layer on the substrate. Previously presented
The method of claim 25, wherein the graphene layer is one of a plurality of graphene layers, and forming the single-crystalline film comprises forming the single- crystalline film on the plurality of graphene layers. Previously presented
The method of claim 25, wherein the graphene layer is the only graphene layer between the single-crystalline film and the substrate. Previously presented
The method of claim 25, wherein the graphene layer is a single- crystalline graphene layer. Previously presented
The method of claim 25, wherein the graphene layer is a polycrystalline graphene layer. Withdrawn
The method of claim 25, wherein, during the separating, the graphene layer is used as a release layer. Previously presented
The method of claim 25, wherein forming the single-crystalline film on the graphene layer comprises using a combination of the substrate and the graphene layer as a seed for the single-crystalline film. Previously presented
The method of claim 25, wherein forming the single-crystalline film comprises depositing material of the substrate on the graphene layer. Previously presented
The method of claim 25, wherein separating the single-crystalline film and the substrate comprises exfoliating the single-crystalline film. Previously presented
The method of claim 25, wherein separating the single-crystalline film and the substrate comprises: forming a metal stressor on the single-crystalline film; disposing a flexible tape on the metal stressor; and pulling the single-crystalline film and the metal stressor off the graphene layer with the flexible tape. Previously presented
The method of claim 25, wherein the single-crystalline film is a first single-crystalline film, and further comprising forming a second single-crystalline film on the substrate after the first single-crystalline film and the substrate have been separated. Previously presented
The method of claim 25, wherein the single-crystalline film comprises a semiconductor material. Previously presented
The method of claim 25, wherein the substrate is a semiconductor substrate. Previously presented
The method of claim 25, wherein the graphene layer is directly on the substrate. Previously presented
The method of claim 25, wherein the single-crystalline film comprises SiC. Previously presented
Canceled
Canceled
38-40. Canceled
Canceled
A method, comprising: forming a single-crystalline film on a graphene layer that is on a substrate having a potential field, wherein the potential field of the substrate reaches beyond the graphene layer to seed the growth of the single-crystalline film; and separating the single-crystalline film and the substrate. Previously presented
The method of claim 48, wherein the single-crystalline film is a first single-crystalline film, and further comprising forming a second single-crystalline film on the substrate after the first single-crystalline film and the substrate have been separated. Previously presented
The method of claim 48, wherein the single-crystalline film comprises a semiconductor material. Previously presented
The method of claim 48, wherein the substrate is a semiconductor substrate. Previously presented
The method of claim 48, wherein the single-crystalline film comprises SiC. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based layer transfer stack
Materials described outside the worked examples.
graphene layer
C
single-crystalline film (semiconductor device layer)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.00001 Torr | — |
Temperature | ≥ 1100 °C |
Related documents with shared materials, methods, properties, or citations.
Excitation lifetime extracted from electron-photon (EELS-CL) nanosecond-scale temporal coincidences
SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMPRISING GRAPHENE AND/OR HEXAGONAL BORON NITRIDE AND RELATED ARTICLES
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Atlas literature
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US 10,770,289Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1D shows that an epilayer 140 (e.g., a single crystalline film to have high electrical and optical device performance) is then fabricated on the graphene …
FIG. 2 are for illustrative purposes only. In practice, other materials with similar lattice mismatches with respect to graphene can also be used to form the …
FIG. 3D, the devices made of the epilayer 330 can have higher electron or hole mobility. AN optoelectronic device made of the epilayer 330 can also have an …
FIG. 4A. In this case, the graphene layer 421 includes only a single monolayer of graphene (i.e., the graphene layer 421 is one atom thick) and the potential …
FIG. 5 A, a donor wafer 51 0 a is provided to grow a graphene layer 520 (shown in FIG. S B). FIG. S B shows that the graphene layer 520 is then transferred to …
FIG. 6B). This implies that the substrate right below the graphene layer plays a role in determining epitaxial orientation. Accordingly, the material (or the …
FIGS. 7A-7C show schematics of three different types of graphene-based layer fabrication systems using graphene layers of different thicknesses. In applications, …
FIG. 8B. The porous film 830 has a high density of pinholes (e.g., about one hole per square micron). Alternatively, the porous film 830 can include any film with …
FIGS. 9A and 9B are scanning electron microscopy (SEM) images of the Ge and GaAs films, respectively, grown on damaged graphene. Although pits appear on the …
FIGS. 10 A and lO B are SEM images of the Ge and GaAs films shown in
FIG. 11G. The stressor layer 1160 is in contact with the second target substrate 1135 and the LED stack 1140 is exposed for further processing. For example,
FIG. 12B. The Ge film 1620 then functions as seed to grow a graphene layer 1630 epitaxially, as seen in
FIG. 13A. The graphene layer 1320 can be transferred to the glass substrate 1310 via any method described in this application or any other method known in the …
FIG. 14B. An A 1 203 layer 1470 is then deposited on the InGaAs layer 1430 as the top gate dielectric. A gate 1480 is fabricated on the A 1 203 layer 1470 to …
FIGS. 15A-15F illustrate a method of hetero-integration using a graphene-based layer fabrication and transfer technique. [0032]
FIG. 16C. The graphene layer 1630 can include single crystalline graphene. [0106] In
FIG. 1610. [0107] Conclusion [0108] While various inventive embodiments have been described and illustrated herein, those of ordinary skill in the art will …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-24. Canceled
Canceled
A method, comprising: forming a single-crystalline film on a continuous graphene layer that is on a substrate, wherein forming the single-crystalline film on the graphene layer comprises using the substrate as a seed for the single-crystalline film; and separating the single-crystalline film and the substrate. Previously presented
The method of claim 25, further comprising forming the graphene layer on the substrate. Previously presented
The method of claim 25, wherein the graphene layer is one of a plurality of graphene layers, and forming the single-crystalline film comprises forming the single- crystalline film on the plurality of graphene layers. Previously presented
The method of claim 25, wherein the graphene layer is the only graphene layer between the single-crystalline film and the substrate. Previously presented
The method of claim 25, wherein the graphene layer is a single- crystalline graphene layer. Previously presented
The method of claim 25, wherein the graphene layer is a polycrystalline graphene layer. Withdrawn
The method of claim 25, wherein, during the separating, the graphene layer is used as a release layer. Previously presented
The method of claim 25, wherein forming the single-crystalline film on the graphene layer comprises using a combination of the substrate and the graphene layer as a seed for the single-crystalline film. Previously presented
The method of claim 25, wherein forming the single-crystalline film comprises depositing material of the substrate on the graphene layer. Previously presented
The method of claim 25, wherein separating the single-crystalline film and the substrate comprises exfoliating the single-crystalline film. Previously presented
The method of claim 25, wherein separating the single-crystalline film and the substrate comprises: forming a metal stressor on the single-crystalline film; disposing a flexible tape on the metal stressor; and pulling the single-crystalline film and the metal stressor off the graphene layer with the flexible tape. Previously presented
The method of claim 25, wherein the single-crystalline film is a first single-crystalline film, and further comprising forming a second single-crystalline film on the substrate after the first single-crystalline film and the substrate have been separated. Previously presented
The method of claim 25, wherein the single-crystalline film comprises a semiconductor material. Previously presented
The method of claim 25, wherein the substrate is a semiconductor substrate. Previously presented
The method of claim 25, wherein the graphene layer is directly on the substrate. Previously presented
The method of claim 25, wherein the single-crystalline film comprises SiC. Previously presented
Canceled
Canceled
38-40. Canceled
Canceled
A method, comprising: forming a single-crystalline film on a graphene layer that is on a substrate having a potential field, wherein the potential field of the substrate reaches beyond the graphene layer to seed the growth of the single-crystalline film; and separating the single-crystalline film and the substrate. Previously presented
The method of claim 48, wherein the single-crystalline film is a first single-crystalline film, and further comprising forming a second single-crystalline film on the substrate after the first single-crystalline film and the substrate have been separated. Previously presented
The method of claim 48, wherein the single-crystalline film comprises a semiconductor material. Previously presented
The method of claim 48, wherein the substrate is a semiconductor substrate. Previously presented
The method of claim 48, wherein the single-crystalline film comprises SiC. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based layer transfer stack
Materials described outside the worked examples.
graphene layer
C
single-crystalline film (semiconductor device layer)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.00001 Torr | — |
Temperature | ≥ 1100 °C |
Related documents with shared materials, methods, properties, or citations.
Excitation lifetime extracted from electron-photon (EELS-CL) nanosecond-scale temporal coincidences
SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMPRISING GRAPHENE AND/OR HEXAGONAL BORON NITRIDE AND RELATED ARTICLES
Patent
Atlas literature
Patent
US 10,770,289Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1D shows that an epilayer 140 (e.g., a single crystalline film to have high electrical and optical device performance) is then fabricated on the graphene …
FIG. 2 are for illustrative purposes only. In practice, other materials with similar lattice mismatches with respect to graphene can also be used to form the …
FIG. 3D, the devices made of the epilayer 330 can have higher electron or hole mobility. AN optoelectronic device made of the epilayer 330 can also have an …
FIG. 4A. In this case, the graphene layer 421 includes only a single monolayer of graphene (i.e., the graphene layer 421 is one atom thick) and the potential …
FIG. 5 A, a donor wafer 51 0 a is provided to grow a graphene layer 520 (shown in FIG. S B). FIG. S B shows that the graphene layer 520 is then transferred to …
FIG. 6B). This implies that the substrate right below the graphene layer plays a role in determining epitaxial orientation. Accordingly, the material (or the …
FIGS. 7A-7C show schematics of three different types of graphene-based layer fabrication systems using graphene layers of different thicknesses. In applications, …
FIG. 8B. The porous film 830 has a high density of pinholes (e.g., about one hole per square micron). Alternatively, the porous film 830 can include any film with …
FIGS. 9A and 9B are scanning electron microscopy (SEM) images of the Ge and GaAs films, respectively, grown on damaged graphene. Although pits appear on the …
FIGS. 10 A and lO B are SEM images of the Ge and GaAs films shown in
FIG. 11G. The stressor layer 1160 is in contact with the second target substrate 1135 and the LED stack 1140 is exposed for further processing. For example,
FIG. 12B. The Ge film 1620 then functions as seed to grow a graphene layer 1630 epitaxially, as seen in
FIG. 13A. The graphene layer 1320 can be transferred to the glass substrate 1310 via any method described in this application or any other method known in the …
FIG. 14B. An A 1 203 layer 1470 is then deposited on the InGaAs layer 1430 as the top gate dielectric. A gate 1480 is fabricated on the A 1 203 layer 1470 to …
FIGS. 15A-15F illustrate a method of hetero-integration using a graphene-based layer fabrication and transfer technique. [0032]
FIG. 16C. The graphene layer 1630 can include single crystalline graphene. [0106] In
FIG. 1610. [0107] Conclusion [0108] While various inventive embodiments have been described and illustrated herein, those of ordinary skill in the art will …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-24. Canceled
Canceled
A method, comprising: forming a single-crystalline film on a continuous graphene layer that is on a substrate, wherein forming the single-crystalline film on the graphene layer comprises using the substrate as a seed for the single-crystalline film; and separating the single-crystalline film and the substrate. Previously presented
The method of claim 25, further comprising forming the graphene layer on the substrate. Previously presented
The method of claim 25, wherein the graphene layer is one of a plurality of graphene layers, and forming the single-crystalline film comprises forming the single- crystalline film on the plurality of graphene layers. Previously presented
The method of claim 25, wherein the graphene layer is the only graphene layer between the single-crystalline film and the substrate. Previously presented
The method of claim 25, wherein the graphene layer is a single- crystalline graphene layer. Previously presented
The method of claim 25, wherein the graphene layer is a polycrystalline graphene layer. Withdrawn
The method of claim 25, wherein, during the separating, the graphene layer is used as a release layer. Previously presented
The method of claim 25, wherein forming the single-crystalline film on the graphene layer comprises using a combination of the substrate and the graphene layer as a seed for the single-crystalline film. Previously presented
The method of claim 25, wherein forming the single-crystalline film comprises depositing material of the substrate on the graphene layer. Previously presented
The method of claim 25, wherein separating the single-crystalline film and the substrate comprises exfoliating the single-crystalline film. Previously presented
The method of claim 25, wherein separating the single-crystalline film and the substrate comprises: forming a metal stressor on the single-crystalline film; disposing a flexible tape on the metal stressor; and pulling the single-crystalline film and the metal stressor off the graphene layer with the flexible tape. Previously presented
The method of claim 25, wherein the single-crystalline film is a first single-crystalline film, and further comprising forming a second single-crystalline film on the substrate after the first single-crystalline film and the substrate have been separated. Previously presented
The method of claim 25, wherein the single-crystalline film comprises a semiconductor material. Previously presented
The method of claim 25, wherein the substrate is a semiconductor substrate. Previously presented
The method of claim 25, wherein the graphene layer is directly on the substrate. Previously presented
The method of claim 25, wherein the single-crystalline film comprises SiC. Previously presented
Canceled
Canceled
38-40. Canceled
Canceled
A method, comprising: forming a single-crystalline film on a graphene layer that is on a substrate having a potential field, wherein the potential field of the substrate reaches beyond the graphene layer to seed the growth of the single-crystalline film; and separating the single-crystalline film and the substrate. Previously presented
The method of claim 48, wherein the single-crystalline film is a first single-crystalline film, and further comprising forming a second single-crystalline film on the substrate after the first single-crystalline film and the substrate have been separated. Previously presented
The method of claim 48, wherein the single-crystalline film comprises a semiconductor material. Previously presented
The method of claim 48, wherein the substrate is a semiconductor substrate. Previously presented
The method of claim 48, wherein the single-crystalline film comprises SiC. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based layer transfer stack
Materials described outside the worked examples.
graphene layer
C
single-crystalline film (semiconductor device layer)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.00001 Torr | — |
Temperature | ≥ 1100 °C |
Related documents with shared materials, methods, properties, or citations.
Excitation lifetime extracted from electron-photon (EELS-CL) nanosecond-scale temporal coincidences
SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMPRISING GRAPHENE AND/OR HEXAGONAL BORON NITRIDE AND RELATED ARTICLES
Patent
Atlas literature
Patent
US 10,770,289Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1D shows that an epilayer 140 (e.g., a single crystalline film to have high electrical and optical device performance) is then fabricated on the graphene …
FIG. 2 are for illustrative purposes only. In practice, other materials with similar lattice mismatches with respect to graphene can also be used to form the …
FIG. 3D, the devices made of the epilayer 330 can have higher electron or hole mobility. AN optoelectronic device made of the epilayer 330 can also have an …
FIG. 4A. In this case, the graphene layer 421 includes only a single monolayer of graphene (i.e., the graphene layer 421 is one atom thick) and the potential …
FIG. 5 A, a donor wafer 51 0 a is provided to grow a graphene layer 520 (shown in FIG. S B). FIG. S B shows that the graphene layer 520 is then transferred to …
FIG. 6B). This implies that the substrate right below the graphene layer plays a role in determining epitaxial orientation. Accordingly, the material (or the …
FIGS. 7A-7C show schematics of three different types of graphene-based layer fabrication systems using graphene layers of different thicknesses. In applications, …
FIG. 8B. The porous film 830 has a high density of pinholes (e.g., about one hole per square micron). Alternatively, the porous film 830 can include any film with …
FIGS. 9A and 9B are scanning electron microscopy (SEM) images of the Ge and GaAs films, respectively, grown on damaged graphene. Although pits appear on the …
FIGS. 10 A and lO B are SEM images of the Ge and GaAs films shown in
FIG. 11G. The stressor layer 1160 is in contact with the second target substrate 1135 and the LED stack 1140 is exposed for further processing. For example,
FIG. 12B. The Ge film 1620 then functions as seed to grow a graphene layer 1630 epitaxially, as seen in
FIG. 13A. The graphene layer 1320 can be transferred to the glass substrate 1310 via any method described in this application or any other method known in the …
FIG. 14B. An A 1 203 layer 1470 is then deposited on the InGaAs layer 1430 as the top gate dielectric. A gate 1480 is fabricated on the A 1 203 layer 1470 to …
FIGS. 15A-15F illustrate a method of hetero-integration using a graphene-based layer fabrication and transfer technique. [0032]
FIG. 16C. The graphene layer 1630 can include single crystalline graphene. [0106] In
FIG. 1610. [0107] Conclusion [0108] While various inventive embodiments have been described and illustrated herein, those of ordinary skill in the art will …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-24. Canceled
Canceled
A method, comprising: forming a single-crystalline film on a continuous graphene layer that is on a substrate, wherein forming the single-crystalline film on the graphene layer comprises using the substrate as a seed for the single-crystalline film; and separating the single-crystalline film and the substrate. Previously presented
The method of claim 25, further comprising forming the graphene layer on the substrate. Previously presented
The method of claim 25, wherein the graphene layer is one of a plurality of graphene layers, and forming the single-crystalline film comprises forming the single- crystalline film on the plurality of graphene layers. Previously presented
The method of claim 25, wherein the graphene layer is the only graphene layer between the single-crystalline film and the substrate. Previously presented
The method of claim 25, wherein the graphene layer is a single- crystalline graphene layer. Previously presented
The method of claim 25, wherein the graphene layer is a polycrystalline graphene layer. Withdrawn
The method of claim 25, wherein, during the separating, the graphene layer is used as a release layer. Previously presented
The method of claim 25, wherein forming the single-crystalline film on the graphene layer comprises using a combination of the substrate and the graphene layer as a seed for the single-crystalline film. Previously presented
The method of claim 25, wherein forming the single-crystalline film comprises depositing material of the substrate on the graphene layer. Previously presented
The method of claim 25, wherein separating the single-crystalline film and the substrate comprises exfoliating the single-crystalline film. Previously presented
The method of claim 25, wherein separating the single-crystalline film and the substrate comprises: forming a metal stressor on the single-crystalline film; disposing a flexible tape on the metal stressor; and pulling the single-crystalline film and the metal stressor off the graphene layer with the flexible tape. Previously presented
The method of claim 25, wherein the single-crystalline film is a first single-crystalline film, and further comprising forming a second single-crystalline film on the substrate after the first single-crystalline film and the substrate have been separated. Previously presented
The method of claim 25, wherein the single-crystalline film comprises a semiconductor material. Previously presented
The method of claim 25, wherein the substrate is a semiconductor substrate. Previously presented
The method of claim 25, wherein the graphene layer is directly on the substrate. Previously presented
The method of claim 25, wherein the single-crystalline film comprises SiC. Previously presented
Canceled
Canceled
38-40. Canceled
Canceled
A method, comprising: forming a single-crystalline film on a graphene layer that is on a substrate having a potential field, wherein the potential field of the substrate reaches beyond the graphene layer to seed the growth of the single-crystalline film; and separating the single-crystalline film and the substrate. Previously presented
The method of claim 48, wherein the single-crystalline film is a first single-crystalline film, and further comprising forming a second single-crystalline film on the substrate after the first single-crystalline film and the substrate have been separated. Previously presented
The method of claim 48, wherein the single-crystalline film comprises a semiconductor material. Previously presented
The method of claim 48, wherein the substrate is a semiconductor substrate. Previously presented
The method of claim 48, wherein the single-crystalline film comprises SiC. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based layer transfer stack
Materials described outside the worked examples.
graphene layer
C
single-crystalline film (semiconductor device layer)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.00001 Torr | — |
Temperature | ≥ 1100 °C |
Related documents with shared materials, methods, properties, or citations.
Excitation lifetime extracted from electron-photon (EELS-CL) nanosecond-scale temporal coincidences
SYSTEMS AND METHODS FOR GROWTH OF SILICON CARBIDE OVER A LAYER COMPRISING GRAPHENE AND/OR HEXAGONAL BORON NITRIDE AND RELATED ARTICLES
SiC
III-V semiconductor
III-N semiconductor
II-VI semiconductor
Si
Ge
SiGe
GaN
| — |
SiC
III-V semiconductor
III-N semiconductor
II-VI semiconductor
Si
Ge
SiGe
GaN
| — |
SiC
III-V semiconductor
III-N semiconductor
II-VI semiconductor
Si
Ge
SiGe
GaN
| — |
SiC
III-V semiconductor
III-N semiconductor
II-VI semiconductor
Si
Ge
SiGe
GaN
| — |