Patent
US 11,090,585partially delaminated graphite
hexagonal boron nitride
h-BN
molybdenum disulphide
MoS₂
tungsten diselenide
WSe₂
transition metal dichalcogenides
molybdenum diselenide
MoSe₂
molybdenum ditelluride
MoTe₂
tungsten disulphide
WS₂
water
H₂O
| 20–40 °C |
| — |
Thickness | ≤ 1 nm | — |
Duration | ≥ 2 hours | — |
Thickness | 1–100 nm | — |
Thickness | 0.01–2 cm | — |
Thickness | 0.02–1 cm | — |
Thickness | 1–20 mm | — |
Thickness | 5–10 mm | — |
partially delaminated graphite
hexagonal boron nitride
h-BN
molybdenum disulphide
MoS₂
tungsten diselenide
WSe₂
transition metal dichalcogenides
molybdenum diselenide
MoSe₂
molybdenum ditelluride
MoTe₂
tungsten disulphide
WS₂
water
H₂O
| 20–40 °C |
| — |
Thickness | ≤ 1 nm | — |
Duration | ≥ 2 hours | — |
Thickness | 1–100 nm | — |
Thickness | 0.01–2 cm | — |
Thickness | 0.02–1 cm | — |
Thickness | 1–20 mm | — |
Thickness | 5–10 mm | — |
partially delaminated graphite
hexagonal boron nitride
h-BN
molybdenum disulphide
MoS₂
tungsten diselenide
WSe₂
transition metal dichalcogenides
molybdenum diselenide
MoSe₂
molybdenum ditelluride
MoTe₂
tungsten disulphide
WS₂
water
H₂O
| 20–40 °C |
| — |
Thickness | ≤ 1 nm | — |
Duration | ≥ 2 hours | — |
Thickness | 1–100 nm | — |
Thickness | 0.01–2 cm | — |
Thickness | 0.02–1 cm | — |
Thickness | 1–20 mm | — |
Thickness | 5–10 mm | — |
partially delaminated graphite
hexagonal boron nitride
h-BN
molybdenum disulphide
MoS₂
tungsten diselenide
WSe₂
transition metal dichalcogenides
molybdenum diselenide
MoSe₂
molybdenum ditelluride
MoTe₂
tungsten disulphide
WS₂
water
H₂O
| 20–40 °C |
| — |
Thickness | ≤ 1 nm | — |
Duration | ≥ 2 hours | — |
Thickness | 1–100 nm | — |
Thickness | 0.01–2 cm | — |
Thickness | 0.02–1 cm | — |
Thickness | 1–20 mm | — |
Thickness | 5–10 mm | — |