Patent
US 8,828,193first graphitic material
second graphitic material
graphene second conductivity state (claimed lower bound) | ≥ 1000 S/m | graphene |
graphene second conductivity state (claimed tighter lower bound) | ≥ 1400 S/m | graphene |
graphene electrical conductivity (described embodiment) | ≥ 1400 S/m | graphene |
graphite oxide oxygen content (described embodiment) | 25–45 wt% | graphite oxide |
graphene oxygen content (described embodiment) | ≤ 4 wt% | graphene |
graphene oxygen content (claimed upper bound) | ≤ 5 wt% | graphene |
graphite O-H stretching vibration | 3427 cm⁻¹ | graphene |
graphite oxide O-H stretching vibration | 3432 cm⁻¹ | graphite oxide |
graphite oxide CH2 asymmetric stretching vibration | 2924 cm⁻¹ | graphite oxide |
graphite oxide CH2 symmetric stretching vibration | 2852 cm⁻¹ | graphite oxide |
graphite oxide C=O stretching vibration | 1825 cm⁻¹ | graphite oxide |
graphite oxide C=C from unoxidized sp2 bonds | 1627 cm⁻¹ | graphite oxide |
graphite oxide O-H bending deformation | 1408 cm⁻¹ | graphite oxide |
graphite oxide C-O vibration | 1049 cm⁻¹ | graphite oxide |
graphene broad O-H band (adsorbed moisture) | 3436 cm⁻¹ | graphene |
graphite C(002) XRD peak | — | graphite oxide |
graphite oxide interlayer spacing | 8.36 Angstrom | graphite oxide |
graphene weak broad C(002) peak | 20–24 deg | graphene |
graphene ID/IG Raman ratio | 0.2 | graphene |
graphite oxide ID/IG Raman ratio | 1.16 | graphite oxide |
graphene Raman D band position (claimed) | 1360 cm⁻¹ | graphene |
graphene Raman G band position (claimed) | 1570 cm⁻¹ | graphene |
Thickness | 580–700 nm | — |
— | 1.77–2.03 W | — |
Thickness | 0.9–1.4 nm | — |
Duration | 1–2 seconds | — |
Duration | ≤ 5 minutes | — |
Thickness | 250–2500 nm | — |
Thickness | 200–400 nm | — |
Thickness | 780–10000 nm | — |
Temperature | ≤ 1 °C | — |
Duration | ≤ 2 minutes | — |
Duration | ≤ 1 minute | — |
Duration | ≤ 2 seconds | — |
Duration | ≤ 10 minutes | — |
Duration | ≥ 10 minutes | — |
Duration | ≥ 5 minutes | — |
first graphitic material
second graphitic material
graphene second conductivity state (claimed lower bound) | ≥ 1000 S/m | graphene |
graphene second conductivity state (claimed tighter lower bound) | ≥ 1400 S/m | graphene |
graphene electrical conductivity (described embodiment) | ≥ 1400 S/m | graphene |
graphite oxide oxygen content (described embodiment) | 25–45 wt% | graphite oxide |
graphene oxygen content (described embodiment) | ≤ 4 wt% | graphene |
graphene oxygen content (claimed upper bound) | ≤ 5 wt% | graphene |
graphite O-H stretching vibration | 3427 cm⁻¹ | graphene |
graphite oxide O-H stretching vibration | 3432 cm⁻¹ | graphite oxide |
graphite oxide CH2 asymmetric stretching vibration | 2924 cm⁻¹ | graphite oxide |
graphite oxide CH2 symmetric stretching vibration | 2852 cm⁻¹ | graphite oxide |
graphite oxide C=O stretching vibration | 1825 cm⁻¹ | graphite oxide |
graphite oxide C=C from unoxidized sp2 bonds | 1627 cm⁻¹ | graphite oxide |
graphite oxide O-H bending deformation | 1408 cm⁻¹ | graphite oxide |
graphite oxide C-O vibration | 1049 cm⁻¹ | graphite oxide |
graphene broad O-H band (adsorbed moisture) | 3436 cm⁻¹ | graphene |
graphite C(002) XRD peak | — | graphite oxide |
graphite oxide interlayer spacing | 8.36 Angstrom | graphite oxide |
graphene weak broad C(002) peak | 20–24 deg | graphene |
graphene ID/IG Raman ratio | 0.2 | graphene |
graphite oxide ID/IG Raman ratio | 1.16 | graphite oxide |
graphene Raman D band position (claimed) | 1360 cm⁻¹ | graphene |
graphene Raman G band position (claimed) | 1570 cm⁻¹ | graphene |
Thickness | 580–700 nm | — |
— | 1.77–2.03 W | — |
Thickness | 0.9–1.4 nm | — |
Duration | 1–2 seconds | — |
Duration | ≤ 5 minutes | — |
Thickness | 250–2500 nm | — |
Thickness | 200–400 nm | — |
Thickness | 780–10000 nm | — |
Temperature | ≤ 1 °C | — |
Duration | ≤ 2 minutes | — |
Duration | ≤ 1 minute | — |
Duration | ≤ 2 seconds | — |
Duration | ≤ 10 minutes | — |
Duration | ≥ 10 minutes | — |
Duration | ≥ 5 minutes | — |
first graphitic material
second graphitic material
graphene second conductivity state (claimed lower bound) | ≥ 1000 S/m | graphene |
graphene second conductivity state (claimed tighter lower bound) | ≥ 1400 S/m | graphene |
graphene electrical conductivity (described embodiment) | ≥ 1400 S/m | graphene |
graphite oxide oxygen content (described embodiment) | 25–45 wt% | graphite oxide |
graphene oxygen content (described embodiment) | ≤ 4 wt% | graphene |
graphene oxygen content (claimed upper bound) | ≤ 5 wt% | graphene |
graphite O-H stretching vibration | 3427 cm⁻¹ | graphene |
graphite oxide O-H stretching vibration | 3432 cm⁻¹ | graphite oxide |
graphite oxide CH2 asymmetric stretching vibration | 2924 cm⁻¹ | graphite oxide |
graphite oxide CH2 symmetric stretching vibration | 2852 cm⁻¹ | graphite oxide |
graphite oxide C=O stretching vibration | 1825 cm⁻¹ | graphite oxide |
graphite oxide C=C from unoxidized sp2 bonds | 1627 cm⁻¹ | graphite oxide |
graphite oxide O-H bending deformation | 1408 cm⁻¹ | graphite oxide |
graphite oxide C-O vibration | 1049 cm⁻¹ | graphite oxide |
graphene broad O-H band (adsorbed moisture) | 3436 cm⁻¹ | graphene |
graphite C(002) XRD peak | — | graphite oxide |
graphite oxide interlayer spacing | 8.36 Angstrom | graphite oxide |
graphene weak broad C(002) peak | 20–24 deg | graphene |
graphene ID/IG Raman ratio | 0.2 | graphene |
graphite oxide ID/IG Raman ratio | 1.16 | graphite oxide |
graphene Raman D band position (claimed) | 1360 cm⁻¹ | graphene |
graphene Raman G band position (claimed) | 1570 cm⁻¹ | graphene |
Thickness | 580–700 nm | — |
— | 1.77–2.03 W | — |
Thickness | 0.9–1.4 nm | — |
Duration | 1–2 seconds | — |
Duration | ≤ 5 minutes | — |
Thickness | 250–2500 nm | — |
Thickness | 200–400 nm | — |
Thickness | 780–10000 nm | — |
Temperature | ≤ 1 °C | — |
Duration | ≤ 2 minutes | — |
Duration | ≤ 1 minute | — |
Duration | ≤ 2 seconds | — |
Duration | ≤ 10 minutes | — |
Duration | ≥ 10 minutes | — |
Duration | ≥ 5 minutes | — |
first graphitic material
second graphitic material
graphene second conductivity state (claimed lower bound) | ≥ 1000 S/m | graphene |
graphene second conductivity state (claimed tighter lower bound) | ≥ 1400 S/m | graphene |
graphene electrical conductivity (described embodiment) | ≥ 1400 S/m | graphene |
graphite oxide oxygen content (described embodiment) | 25–45 wt% | graphite oxide |
graphene oxygen content (described embodiment) | ≤ 4 wt% | graphene |
graphene oxygen content (claimed upper bound) | ≤ 5 wt% | graphene |
graphite O-H stretching vibration | 3427 cm⁻¹ | graphene |
graphite oxide O-H stretching vibration | 3432 cm⁻¹ | graphite oxide |
graphite oxide CH2 asymmetric stretching vibration | 2924 cm⁻¹ | graphite oxide |
graphite oxide CH2 symmetric stretching vibration | 2852 cm⁻¹ | graphite oxide |
graphite oxide C=O stretching vibration | 1825 cm⁻¹ | graphite oxide |
graphite oxide C=C from unoxidized sp2 bonds | 1627 cm⁻¹ | graphite oxide |
graphite oxide O-H bending deformation | 1408 cm⁻¹ | graphite oxide |
graphite oxide C-O vibration | 1049 cm⁻¹ | graphite oxide |
graphene broad O-H band (adsorbed moisture) | 3436 cm⁻¹ | graphene |
graphite C(002) XRD peak | — | graphite oxide |
graphite oxide interlayer spacing | 8.36 Angstrom | graphite oxide |
graphene weak broad C(002) peak | 20–24 deg | graphene |
graphene ID/IG Raman ratio | 0.2 | graphene |
graphite oxide ID/IG Raman ratio | 1.16 | graphite oxide |
graphene Raman D band position (claimed) | 1360 cm⁻¹ | graphene |
graphene Raman G band position (claimed) | 1570 cm⁻¹ | graphene |
Thickness | 580–700 nm | — |
— | 1.77–2.03 W | — |
Thickness | 0.9–1.4 nm | — |
Duration | 1–2 seconds | — |
Duration | ≤ 5 minutes | — |
Thickness | 250–2500 nm | — |
Thickness | 200–400 nm | — |
Thickness | 780–10000 nm | — |
Temperature | ≤ 1 °C | — |
Duration | ≤ 2 minutes | — |
Duration | ≤ 1 minute | — |
Duration | ≤ 2 seconds | — |
Duration | ≤ 10 minutes | — |
Duration | ≥ 10 minutes | — |
Duration | ≥ 5 minutes | — |