Patent
US 9,236,156PREPARING METHOD OF REDUCED GRAPHENE OXIDE FILM, REDUCED GRAPHENE OXIDE FILM PREPARED BY THE SAME, AND GRAPHENE ELECTRODE INCLUDING THE REDUCED GRAPHENE OXIDE FILM
Sung Hyun KIM
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,236,156Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating a preparing method of CRGO, TRGO, and PRGO films in accordance with an example embodiment; [018]
FIG. 2F provides an AFM image of a PRGO film in accordance with an example; 4 [024]
FIG. 3 is a schematic diagram illustrating a comparison in heat flow between a preparing process of a TRGO film and a preparing process of a PRGO film in …
FIG. 4B illustrates an XPS C 1 spectrum of a CRGO film in accordance with an example; [027]
FIG. 5 provides a XRD analysis spectrum of CRGO, TRGO, and PRGO films in accordance with an example; [032]
FIG. 6 is a graph illustrating a transmittance of CRGO, TRGO, and PRGO films in accordance with an example; [033]
FIG. 7B is a graph illustrating a change in sheet resistance depending on the number of bending cycles of PRGO in accordance with an example; [034]
FIG. 8C is a graph illustrating the drain current-drain voltage of an organic thin film transistor in accordance with an example. 5 [037] DETAILED DESCRIPTION …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Currently Canceled or Withdrawn Claims: Claim 9 canceled
The preparing method of a reduced graphene oxide film of Claim 91, wherein the pressure is about 2,000 kgf/c m 2 or less. ATT ORNEY DOCKET NO. 2994.SNU.777BS 6 U.S. App. No. 14/220,399
The preparing method of a reduced graphene oxide film of Claim SVG 14220399.10-08-2015.IFPHWYOFPXXIFW1.CLM.3.3.389.400.442.435.svg 0.117 0.177 Chemistry Black and white wherein the heat is added at a temperature in a range of from about 70 * C to about 200 *C.
The preparing method of a reduced graphene oxide film of Claim SVG 14220399.10-08-2015.IFPHWYOFPXXIFW1.CLM.3.5.389.821.442.856.svg 0.117 0.177 Chemistry Black and white wherein the reduction by adding the heat and the pressure includes using hot-press or hot- plate.
A reduced graphene oxide film, prepared by the method according to claim 1. withdrawn
A graphene electrode, comprising the reduced graphene oxide film according to Claim 13. withdrawn
An antistatic film, comprising the reduced graphene oxide film according to Claim 13. ATT ORNEY DOCKET NO. 2994.SNU.777BS 8 withdrawn
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials3 process steps
Water-soluble graphene oxide (GO) powder was prepared by a modified Hummer method from graphite. The GO powder was dispersed in deionized water mixed with ethanol (50 vol%) to give a final concentration of 2 mg/mL. A PES substrate was plasma-processed (200 W, 8 sccm O₂) and spin-coated with the GO-dispersed solution. Hydrazine vapor reduction (chemical reduction) was performed at 100°C for 1 hour in a sealed glass chamber (CRGO film). Then pressure-assisted thermal reduction was performed in a hot press between stainless-steel plates at 180°C for 30 minutes under glove box conditions (PRGO film). The PRGO film on PES substrate was used as the gate electrode of a bottom-gate/top-contact organic thin film transistor with a PVP gate insulator (300 nm), pentacene semiconductor layer (60 nm), and gold S/D electrodes (50 nm).
2 materials1 process step
A CRGO film was produced by hydrazine vapor reduction as in Example 1. Then thermal reduction (TRGO) was carried out by heating to 180°C at a rate of 5°C/min in a tubular furnace under argon atmosphere and maintaining for 30 minutes.
1 material
FE-SEM images of CRGO, TRGO, and PRGO films were observed using a JSM-6700F microscope (JEOL, Tokyo, Japan) at an acceleration voltage of 10 keV. TRGO and PRGO films had fewer wrinkles than CRGO. The PRGO film showed positive thermal expansion coefficient direction and few wrinkles, attributed to sufficient interaction of PES substrate with the PRGO sheet.
Layer stacks claimed or described, ordered top of device to substrate.
graphene electrode
organic thin film transistor (OTFT)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1–2.3 k | — |
Temperature |
Table 1
SVG
As shown in Table 1 below, C/O atomic ratios of GO, CRGO, TRGO, and PRGO were 3.
p. 13
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,236,156Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating a preparing method of CRGO, TRGO, and PRGO films in accordance with an example embodiment; [018]
FIG. 2F provides an AFM image of a PRGO film in accordance with an example; 4 [024]
FIG. 3 is a schematic diagram illustrating a comparison in heat flow between a preparing process of a TRGO film and a preparing process of a PRGO film in …
FIG. 4B illustrates an XPS C 1 spectrum of a CRGO film in accordance with an example; [027]
FIG. 5 provides a XRD analysis spectrum of CRGO, TRGO, and PRGO films in accordance with an example; [032]
FIG. 6 is a graph illustrating a transmittance of CRGO, TRGO, and PRGO films in accordance with an example; [033]
FIG. 7B is a graph illustrating a change in sheet resistance depending on the number of bending cycles of PRGO in accordance with an example; [034]
FIG. 8C is a graph illustrating the drain current-drain voltage of an organic thin film transistor in accordance with an example. 5 [037] DETAILED DESCRIPTION …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Currently Canceled or Withdrawn Claims: Claim 9 canceled
The preparing method of a reduced graphene oxide film of Claim 91, wherein the pressure is about 2,000 kgf/c m 2 or less. ATT ORNEY DOCKET NO. 2994.SNU.777BS 6 U.S. App. No. 14/220,399
The preparing method of a reduced graphene oxide film of Claim SVG 14220399.10-08-2015.IFPHWYOFPXXIFW1.CLM.3.3.389.400.442.435.svg 0.117 0.177 Chemistry Black and white wherein the heat is added at a temperature in a range of from about 70 * C to about 200 *C.
The preparing method of a reduced graphene oxide film of Claim SVG 14220399.10-08-2015.IFPHWYOFPXXIFW1.CLM.3.5.389.821.442.856.svg 0.117 0.177 Chemistry Black and white wherein the reduction by adding the heat and the pressure includes using hot-press or hot- plate.
A reduced graphene oxide film, prepared by the method according to claim 1. withdrawn
A graphene electrode, comprising the reduced graphene oxide film according to Claim 13. withdrawn
An antistatic film, comprising the reduced graphene oxide film according to Claim 13. ATT ORNEY DOCKET NO. 2994.SNU.777BS 8 withdrawn
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials3 process steps
Water-soluble graphene oxide (GO) powder was prepared by a modified Hummer method from graphite. The GO powder was dispersed in deionized water mixed with ethanol (50 vol%) to give a final concentration of 2 mg/mL. A PES substrate was plasma-processed (200 W, 8 sccm O₂) and spin-coated with the GO-dispersed solution. Hydrazine vapor reduction (chemical reduction) was performed at 100°C for 1 hour in a sealed glass chamber (CRGO film). Then pressure-assisted thermal reduction was performed in a hot press between stainless-steel plates at 180°C for 30 minutes under glove box conditions (PRGO film). The PRGO film on PES substrate was used as the gate electrode of a bottom-gate/top-contact organic thin film transistor with a PVP gate insulator (300 nm), pentacene semiconductor layer (60 nm), and gold S/D electrodes (50 nm).
2 materials1 process step
A CRGO film was produced by hydrazine vapor reduction as in Example 1. Then thermal reduction (TRGO) was carried out by heating to 180°C at a rate of 5°C/min in a tubular furnace under argon atmosphere and maintaining for 30 minutes.
1 material
FE-SEM images of CRGO, TRGO, and PRGO films were observed using a JSM-6700F microscope (JEOL, Tokyo, Japan) at an acceleration voltage of 10 keV. TRGO and PRGO films had fewer wrinkles than CRGO. The PRGO film showed positive thermal expansion coefficient direction and few wrinkles, attributed to sufficient interaction of PES substrate with the PRGO sheet.
Layer stacks claimed or described, ordered top of device to substrate.
graphene electrode
organic thin film transistor (OTFT)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1–2.3 k | — |
Temperature |
Table 1
SVG
As shown in Table 1 below, C/O atomic ratios of GO, CRGO, TRGO, and PRGO were 3.
p. 13
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,236,156Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating a preparing method of CRGO, TRGO, and PRGO films in accordance with an example embodiment; [018]
FIG. 2F provides an AFM image of a PRGO film in accordance with an example; 4 [024]
FIG. 3 is a schematic diagram illustrating a comparison in heat flow between a preparing process of a TRGO film and a preparing process of a PRGO film in …
FIG. 4B illustrates an XPS C 1 spectrum of a CRGO film in accordance with an example; [027]
FIG. 5 provides a XRD analysis spectrum of CRGO, TRGO, and PRGO films in accordance with an example; [032]
FIG. 6 is a graph illustrating a transmittance of CRGO, TRGO, and PRGO films in accordance with an example; [033]
FIG. 7B is a graph illustrating a change in sheet resistance depending on the number of bending cycles of PRGO in accordance with an example; [034]
FIG. 8C is a graph illustrating the drain current-drain voltage of an organic thin film transistor in accordance with an example. 5 [037] DETAILED DESCRIPTION …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Currently Canceled or Withdrawn Claims: Claim 9 canceled
The preparing method of a reduced graphene oxide film of Claim 91, wherein the pressure is about 2,000 kgf/c m 2 or less. ATT ORNEY DOCKET NO. 2994.SNU.777BS 6 U.S. App. No. 14/220,399
The preparing method of a reduced graphene oxide film of Claim SVG 14220399.10-08-2015.IFPHWYOFPXXIFW1.CLM.3.3.389.400.442.435.svg 0.117 0.177 Chemistry Black and white wherein the heat is added at a temperature in a range of from about 70 * C to about 200 *C.
The preparing method of a reduced graphene oxide film of Claim SVG 14220399.10-08-2015.IFPHWYOFPXXIFW1.CLM.3.5.389.821.442.856.svg 0.117 0.177 Chemistry Black and white wherein the reduction by adding the heat and the pressure includes using hot-press or hot- plate.
A reduced graphene oxide film, prepared by the method according to claim 1. withdrawn
A graphene electrode, comprising the reduced graphene oxide film according to Claim 13. withdrawn
An antistatic film, comprising the reduced graphene oxide film according to Claim 13. ATT ORNEY DOCKET NO. 2994.SNU.777BS 8 withdrawn
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials3 process steps
Water-soluble graphene oxide (GO) powder was prepared by a modified Hummer method from graphite. The GO powder was dispersed in deionized water mixed with ethanol (50 vol%) to give a final concentration of 2 mg/mL. A PES substrate was plasma-processed (200 W, 8 sccm O₂) and spin-coated with the GO-dispersed solution. Hydrazine vapor reduction (chemical reduction) was performed at 100°C for 1 hour in a sealed glass chamber (CRGO film). Then pressure-assisted thermal reduction was performed in a hot press between stainless-steel plates at 180°C for 30 minutes under glove box conditions (PRGO film). The PRGO film on PES substrate was used as the gate electrode of a bottom-gate/top-contact organic thin film transistor with a PVP gate insulator (300 nm), pentacene semiconductor layer (60 nm), and gold S/D electrodes (50 nm).
2 materials1 process step
A CRGO film was produced by hydrazine vapor reduction as in Example 1. Then thermal reduction (TRGO) was carried out by heating to 180°C at a rate of 5°C/min in a tubular furnace under argon atmosphere and maintaining for 30 minutes.
1 material
FE-SEM images of CRGO, TRGO, and PRGO films were observed using a JSM-6700F microscope (JEOL, Tokyo, Japan) at an acceleration voltage of 10 keV. TRGO and PRGO films had fewer wrinkles than CRGO. The PRGO film showed positive thermal expansion coefficient direction and few wrinkles, attributed to sufficient interaction of PES substrate with the PRGO sheet.
Layer stacks claimed or described, ordered top of device to substrate.
graphene electrode
organic thin film transistor (OTFT)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1–2.3 k | — |
Temperature |
Table 1
SVG
As shown in Table 1 below, C/O atomic ratios of GO, CRGO, TRGO, and PRGO were 3.
p. 13
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,236,156Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating a preparing method of CRGO, TRGO, and PRGO films in accordance with an example embodiment; [018]
FIG. 2F provides an AFM image of a PRGO film in accordance with an example; 4 [024]
FIG. 3 is a schematic diagram illustrating a comparison in heat flow between a preparing process of a TRGO film and a preparing process of a PRGO film in …
FIG. 4B illustrates an XPS C 1 spectrum of a CRGO film in accordance with an example; [027]
FIG. 5 provides a XRD analysis spectrum of CRGO, TRGO, and PRGO films in accordance with an example; [032]
FIG. 6 is a graph illustrating a transmittance of CRGO, TRGO, and PRGO films in accordance with an example; [033]
FIG. 7B is a graph illustrating a change in sheet resistance depending on the number of bending cycles of PRGO in accordance with an example; [034]
FIG. 8C is a graph illustrating the drain current-drain voltage of an organic thin film transistor in accordance with an example. 5 [037] DETAILED DESCRIPTION …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Currently Canceled or Withdrawn Claims: Claim 9 canceled
The preparing method of a reduced graphene oxide film of Claim 91, wherein the pressure is about 2,000 kgf/c m 2 or less. ATT ORNEY DOCKET NO. 2994.SNU.777BS 6 U.S. App. No. 14/220,399
The preparing method of a reduced graphene oxide film of Claim SVG 14220399.10-08-2015.IFPHWYOFPXXIFW1.CLM.3.3.389.400.442.435.svg 0.117 0.177 Chemistry Black and white wherein the heat is added at a temperature in a range of from about 70 * C to about 200 *C.
The preparing method of a reduced graphene oxide film of Claim SVG 14220399.10-08-2015.IFPHWYOFPXXIFW1.CLM.3.5.389.821.442.856.svg 0.117 0.177 Chemistry Black and white wherein the reduction by adding the heat and the pressure includes using hot-press or hot- plate.
A reduced graphene oxide film, prepared by the method according to claim 1. withdrawn
A graphene electrode, comprising the reduced graphene oxide film according to Claim 13. withdrawn
An antistatic film, comprising the reduced graphene oxide film according to Claim 13. ATT ORNEY DOCKET NO. 2994.SNU.777BS 8 withdrawn
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials3 process steps
Water-soluble graphene oxide (GO) powder was prepared by a modified Hummer method from graphite. The GO powder was dispersed in deionized water mixed with ethanol (50 vol%) to give a final concentration of 2 mg/mL. A PES substrate was plasma-processed (200 W, 8 sccm O₂) and spin-coated with the GO-dispersed solution. Hydrazine vapor reduction (chemical reduction) was performed at 100°C for 1 hour in a sealed glass chamber (CRGO film). Then pressure-assisted thermal reduction was performed in a hot press between stainless-steel plates at 180°C for 30 minutes under glove box conditions (PRGO film). The PRGO film on PES substrate was used as the gate electrode of a bottom-gate/top-contact organic thin film transistor with a PVP gate insulator (300 nm), pentacene semiconductor layer (60 nm), and gold S/D electrodes (50 nm).
2 materials1 process step
A CRGO film was produced by hydrazine vapor reduction as in Example 1. Then thermal reduction (TRGO) was carried out by heating to 180°C at a rate of 5°C/min in a tubular furnace under argon atmosphere and maintaining for 30 minutes.
1 material
FE-SEM images of CRGO, TRGO, and PRGO films were observed using a JSM-6700F microscope (JEOL, Tokyo, Japan) at an acceleration voltage of 10 keV. TRGO and PRGO films had fewer wrinkles than CRGO. The PRGO film showed positive thermal expansion coefficient direction and few wrinkles, attributed to sufficient interaction of PES substrate with the PRGO sheet.
Layer stacks claimed or described, ordered top of device to substrate.
graphene electrode
organic thin film transistor (OTFT)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1–2.3 k | — |
Temperature |
Table 1
SVG
As shown in Table 1 below, C/O atomic ratios of GO, CRGO, TRGO, and PRGO were 3.
p. 13
Related documents with shared materials, methods, properties, or citations.
| 1–1.9 k |
| — |
Pressure | 0.000001 Torr | — |
GRAPHENE POWDER, METHOD FOR PRODUCING GRAPHENE POWDER AND ELECTRODE FOR LITHIUM ION BATTERY CONTAINING GRAPHENE POWDER
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GRAPHENE POWDER, METHOD FOR PRODUCING GRAPHENE POWDER AND ELECTRODE FOR LITHIUM ION BATTERY CONTAINING GRAPHENE POWDER
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GRAPHENE POWDER, METHOD FOR PRODUCING GRAPHENE POWDER AND ELECTRODE FOR LITHIUM ION BATTERY CONTAINING GRAPHENE POWDER
| 1–1.9 k |
| — |
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GRAPHENE POWDER, METHOD FOR PRODUCING GRAPHENE POWDER AND ELECTRODE FOR LITHIUM ION BATTERY CONTAINING GRAPHENE POWDER