Patent
US 9,825,589PLANAR GRAPHENE SEMI-CYCLOTRONS
Jordan Rudolph Pagayanan Planillo, Michael A. Torres, Christopher A. Foster
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,825,589Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 3 is top view, showing a cut plane 14-14, of a solid state nanoscale emitter having a plurality of apexed photoelectric elements, in accordance with …
FIG. 2 is a top view of a solid state nanoscale emitter, showing a cut plane 3-3, in accordance with various embodiments. [0012]
FIG. 3 is a cross-sectional view, perpendicular to the cut plane 3-3, of a solid state nanoscale emitter, in accordance with various embodiments. [0013]
FIG. 4 is a close-up view of a portion of the cross-sectional view of
FIG. 5 is a side view of a solid state nanoscale emitter, in which the emitter is exposed to an externally applied electromagnetic field and in accordance with …
FIG. 6 is a timing diagram of an example input waveform and an example output waveform of a solid state nanoscale emitter, in accordance with various …
FIG. 7 is a perspective view of a solid state nanoscale emitter having a plurality of photoelectric elements, in accordance with various embodiments. [0017]
FIG. 8 is a top view, showing a cut plane 9-9, of a solid state nanoscale emitter having a plurality of photoelectric elements, in accordance with various …
FIG. 9 is a cross-sectional view, perpendicular to the cut plane 9-9, of a solid state nanoscale emitter having a plurality of photoelectric elements, in …
FIG. 10 is a close-up view of a portion the cross-sectional view of
FIG. 11 is a side view of a solid state nanoscale emitter having a plurality of photoelectric elements, in accordance with various embodiments. [0021]
FIG. 12, a DC bias input voltage can be applied (e.g., by a voltage source) between the first electrical contact 1208 and the second electrical contact 1212. F …
FIG. 13. [0026]
FIG. 14 is a cross-sectional view, perpendicular to the cut plane 14-14, of a solid state nanoscale emitter having a plurality of apexed photoelectric …
FIG. 15) illustrating a portion of the cross-sectional view of the solid state nanoscale emitter 1200, is shown. The cutout section 16 illustrates, in greater …
FIG. 16 is a close-up view of a portion of the top view of
FIG. 17 is a side view of a solid state nanoscale emitter havin g a plurality of apexed photoelectric elements, in accordance with various embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A system, comprising: a plurality of radio frequency (RF) emitters, each emitter in said plurality of emitters, comprising: a substrate; an insulator bonded to said substra te; a graphene layer bonded to said insulator; a first electrical contact and a second electrical contact, said first electrical contact bonded over a first portion of said graphene layer and said second electrical contact bonded over a second portion of said graphene layer; wherein said graphene layer electrically coupled between said first electrical contact and said second electrical contact, said graphene layer is configured to receive a DC bias voltage between said first electrical contact and said second electrical contact; and a plurality of photoelectric elements bonded to said graphene layer, said plurality of photoelectric elements configured to supply a pulsed burst of electrons to said graphene layer in response to light shining upon said plurality of photoelectric elements, wherein said graphene layer is configured to radiate RF energy in response to said pulsed burst of electrons.
The system according to claim 1, wherein each emitter in said plurality of R F emitters comprise a single integrated circuit and spaced in the integrated circuit such that the 26 DIVISIONAL PATENT APPLICATION NAVY CASE NO. 106054 RF energy radiated by each emitter in said plurality of emitters adds by a process of linear superposition during transmission through free space.
The system according to claim 1, wherein said graphene layer comprises a portion of a substantially planar annulus having a first radius and a second radius, said first radius and said second radius together defining a width of said annulus.
The system according to claim 1 0, wherein said integrated circuit comprising about million emitters, wherein said integrated circuit is about sixteen square inches.
The system according to claim 1 1, wherein said graphene layer comprises a portion of a substantially planar annulus having a first radius and a second radius, said first radius and said second radius together defining a width of said an n ulus. 29
A system, comprising: a plurality of radio frequency (R F) emitters, each emitter in said plurality of emitters, comprising: a substrate; an insulator bonded to said substrate; a graphene layer bonded to said insulator; a first electrical contact and a second electrical contact, said first electrical contact bonded over a first portion of said graphene layer and said second electrical contact bonded over a second portion of said graphene layer; wherein said graphene layer electrically coupled between said first electrical contact and said second electrical contact, said graphene layer is configured to receive a DC bias voltage between said first electrical contact and said second electrical contact; and an apexed photoelectric element bonded to said graphene layer, said apexed 27 DIVISIONAL PATENT APPLICATION NAVY CASE NO. 106054 photoelectric element configured to supply a pulsed burst of electrons to said graphene layer in response to light shining upon said apexed photoelectric element, wherein said graphene layer is configured to radiate RF energy in response to said pulsed burst of electrons.
The system according to claim 5, wherein each emitter in said plurality of RF emitters comprise a single integrated circuit and spaced in the integrated circuit such that the RF energy radiated by each emitter in said plurality of emitters adds by a process of linear superposition during transmission through free space.
A system, comprising: a plurality of radio frequency (R F) emitters, each emitter in said plurality of emitters, comprising: a substrate; an insulator bonded to said substrate; a graphene layer bonded to said insulator; a first electrical contact and a second electrical contact, said first electrical contact 28 DIVISIONAL PATENT APPLICATION NAVY CASE NO. 106054 bonded over a first portion of said graphene layer and said second electrical contact bonded over a second portion of said graphene layer; wherein said graphene layer electrically coupled between said first electrical contact and said second electrical contact, said graphene layer is configured to receive a DC bias voltage between said first electrical contact and said second electrical contact; and a plurality of apexed photoelectric elements bonded to said graphene layer, said plurality of apexed photoelectric elements configured to supply a pulsed burst of electrons to said graphene layer in response to light shining upon said plurality of apexed photoelectric elements, wherein said graphene layer is configured to radiate RF energy in response to said pulsed burst of electrons.
The system according to claim 9, wherein each emitter in said plurality of RF emitters comprise a single integrated circuit and spaced in the integrated circuit such that the RF energy radiated by each emitter in said plurality of emitters adds by a process of linear superposition during transmission through free space.
Layer stacks claimed or described, ordered top of device to substrate.
RF emitter with plurality of photoelectric elements
RF emitter with single apexed photoelectric element
Materials described outside the worked examples.
graphene
C
insulator
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 12, a DC bias input voltage can be applied (e.g., by a voltage source) between the first electrical contact 1208 and the second electrical contact 1212. F …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RF emission frequency range | 300–3000 GHz | C |
graphene layer inner radius (example value) | 95 nm |
Patent
Atlas literature
Patent
US 9,825,589Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 3 is top view, showing a cut plane 14-14, of a solid state nanoscale emitter having a plurality of apexed photoelectric elements, in accordance with …
FIG. 2 is a top view of a solid state nanoscale emitter, showing a cut plane 3-3, in accordance with various embodiments. [0012]
FIG. 3 is a cross-sectional view, perpendicular to the cut plane 3-3, of a solid state nanoscale emitter, in accordance with various embodiments. [0013]
FIG. 4 is a close-up view of a portion of the cross-sectional view of
FIG. 5 is a side view of a solid state nanoscale emitter, in which the emitter is exposed to an externally applied electromagnetic field and in accordance with …
FIG. 6 is a timing diagram of an example input waveform and an example output waveform of a solid state nanoscale emitter, in accordance with various …
FIG. 7 is a perspective view of a solid state nanoscale emitter having a plurality of photoelectric elements, in accordance with various embodiments. [0017]
FIG. 8 is a top view, showing a cut plane 9-9, of a solid state nanoscale emitter having a plurality of photoelectric elements, in accordance with various …
FIG. 9 is a cross-sectional view, perpendicular to the cut plane 9-9, of a solid state nanoscale emitter having a plurality of photoelectric elements, in …
FIG. 10 is a close-up view of a portion the cross-sectional view of
FIG. 11 is a side view of a solid state nanoscale emitter having a plurality of photoelectric elements, in accordance with various embodiments. [0021]
FIG. 12, a DC bias input voltage can be applied (e.g., by a voltage source) between the first electrical contact 1208 and the second electrical contact 1212. F …
FIG. 13. [0026]
FIG. 14 is a cross-sectional view, perpendicular to the cut plane 14-14, of a solid state nanoscale emitter having a plurality of apexed photoelectric …
FIG. 15) illustrating a portion of the cross-sectional view of the solid state nanoscale emitter 1200, is shown. The cutout section 16 illustrates, in greater …
FIG. 16 is a close-up view of a portion of the top view of
FIG. 17 is a side view of a solid state nanoscale emitter havin g a plurality of apexed photoelectric elements, in accordance with various embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A system, comprising: a plurality of radio frequency (RF) emitters, each emitter in said plurality of emitters, comprising: a substrate; an insulator bonded to said substra te; a graphene layer bonded to said insulator; a first electrical contact and a second electrical contact, said first electrical contact bonded over a first portion of said graphene layer and said second electrical contact bonded over a second portion of said graphene layer; wherein said graphene layer electrically coupled between said first electrical contact and said second electrical contact, said graphene layer is configured to receive a DC bias voltage between said first electrical contact and said second electrical contact; and a plurality of photoelectric elements bonded to said graphene layer, said plurality of photoelectric elements configured to supply a pulsed burst of electrons to said graphene layer in response to light shining upon said plurality of photoelectric elements, wherein said graphene layer is configured to radiate RF energy in response to said pulsed burst of electrons.
The system according to claim 1, wherein each emitter in said plurality of R F emitters comprise a single integrated circuit and spaced in the integrated circuit such that the 26 DIVISIONAL PATENT APPLICATION NAVY CASE NO. 106054 RF energy radiated by each emitter in said plurality of emitters adds by a process of linear superposition during transmission through free space.
The system according to claim 1, wherein said graphene layer comprises a portion of a substantially planar annulus having a first radius and a second radius, said first radius and said second radius together defining a width of said annulus.
The system according to claim 1 0, wherein said integrated circuit comprising about million emitters, wherein said integrated circuit is about sixteen square inches.
The system according to claim 1 1, wherein said graphene layer comprises a portion of a substantially planar annulus having a first radius and a second radius, said first radius and said second radius together defining a width of said an n ulus. 29
A system, comprising: a plurality of radio frequency (R F) emitters, each emitter in said plurality of emitters, comprising: a substrate; an insulator bonded to said substrate; a graphene layer bonded to said insulator; a first electrical contact and a second electrical contact, said first electrical contact bonded over a first portion of said graphene layer and said second electrical contact bonded over a second portion of said graphene layer; wherein said graphene layer electrically coupled between said first electrical contact and said second electrical contact, said graphene layer is configured to receive a DC bias voltage between said first electrical contact and said second electrical contact; and an apexed photoelectric element bonded to said graphene layer, said apexed 27 DIVISIONAL PATENT APPLICATION NAVY CASE NO. 106054 photoelectric element configured to supply a pulsed burst of electrons to said graphene layer in response to light shining upon said apexed photoelectric element, wherein said graphene layer is configured to radiate RF energy in response to said pulsed burst of electrons.
The system according to claim 5, wherein each emitter in said plurality of RF emitters comprise a single integrated circuit and spaced in the integrated circuit such that the RF energy radiated by each emitter in said plurality of emitters adds by a process of linear superposition during transmission through free space.
A system, comprising: a plurality of radio frequency (R F) emitters, each emitter in said plurality of emitters, comprising: a substrate; an insulator bonded to said substrate; a graphene layer bonded to said insulator; a first electrical contact and a second electrical contact, said first electrical contact 28 DIVISIONAL PATENT APPLICATION NAVY CASE NO. 106054 bonded over a first portion of said graphene layer and said second electrical contact bonded over a second portion of said graphene layer; wherein said graphene layer electrically coupled between said first electrical contact and said second electrical contact, said graphene layer is configured to receive a DC bias voltage between said first electrical contact and said second electrical contact; and a plurality of apexed photoelectric elements bonded to said graphene layer, said plurality of apexed photoelectric elements configured to supply a pulsed burst of electrons to said graphene layer in response to light shining upon said plurality of apexed photoelectric elements, wherein said graphene layer is configured to radiate RF energy in response to said pulsed burst of electrons.
The system according to claim 9, wherein each emitter in said plurality of RF emitters comprise a single integrated circuit and spaced in the integrated circuit such that the RF energy radiated by each emitter in said plurality of emitters adds by a process of linear superposition during transmission through free space.
Layer stacks claimed or described, ordered top of device to substrate.
RF emitter with plurality of photoelectric elements
RF emitter with single apexed photoelectric element
Materials described outside the worked examples.
graphene
C
insulator
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 12, a DC bias input voltage can be applied (e.g., by a voltage source) between the first electrical contact 1208 and the second electrical contact 1212. F …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RF emission frequency range | 300–3000 GHz | C |
graphene layer inner radius (example value) | 95 nm |
Patent
Atlas literature
Patent
US 9,825,589Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 3 is top view, showing a cut plane 14-14, of a solid state nanoscale emitter having a plurality of apexed photoelectric elements, in accordance with …
FIG. 2 is a top view of a solid state nanoscale emitter, showing a cut plane 3-3, in accordance with various embodiments. [0012]
FIG. 3 is a cross-sectional view, perpendicular to the cut plane 3-3, of a solid state nanoscale emitter, in accordance with various embodiments. [0013]
FIG. 4 is a close-up view of a portion of the cross-sectional view of
FIG. 5 is a side view of a solid state nanoscale emitter, in which the emitter is exposed to an externally applied electromagnetic field and in accordance with …
FIG. 6 is a timing diagram of an example input waveform and an example output waveform of a solid state nanoscale emitter, in accordance with various …
FIG. 7 is a perspective view of a solid state nanoscale emitter having a plurality of photoelectric elements, in accordance with various embodiments. [0017]
FIG. 8 is a top view, showing a cut plane 9-9, of a solid state nanoscale emitter having a plurality of photoelectric elements, in accordance with various …
FIG. 9 is a cross-sectional view, perpendicular to the cut plane 9-9, of a solid state nanoscale emitter having a plurality of photoelectric elements, in …
FIG. 10 is a close-up view of a portion the cross-sectional view of
FIG. 11 is a side view of a solid state nanoscale emitter having a plurality of photoelectric elements, in accordance with various embodiments. [0021]
FIG. 12, a DC bias input voltage can be applied (e.g., by a voltage source) between the first electrical contact 1208 and the second electrical contact 1212. F …
FIG. 13. [0026]
FIG. 14 is a cross-sectional view, perpendicular to the cut plane 14-14, of a solid state nanoscale emitter having a plurality of apexed photoelectric …
FIG. 15) illustrating a portion of the cross-sectional view of the solid state nanoscale emitter 1200, is shown. The cutout section 16 illustrates, in greater …
FIG. 16 is a close-up view of a portion of the top view of
FIG. 17 is a side view of a solid state nanoscale emitter havin g a plurality of apexed photoelectric elements, in accordance with various embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A system, comprising: a plurality of radio frequency (RF) emitters, each emitter in said plurality of emitters, comprising: a substrate; an insulator bonded to said substra te; a graphene layer bonded to said insulator; a first electrical contact and a second electrical contact, said first electrical contact bonded over a first portion of said graphene layer and said second electrical contact bonded over a second portion of said graphene layer; wherein said graphene layer electrically coupled between said first electrical contact and said second electrical contact, said graphene layer is configured to receive a DC bias voltage between said first electrical contact and said second electrical contact; and a plurality of photoelectric elements bonded to said graphene layer, said plurality of photoelectric elements configured to supply a pulsed burst of electrons to said graphene layer in response to light shining upon said plurality of photoelectric elements, wherein said graphene layer is configured to radiate RF energy in response to said pulsed burst of electrons.
The system according to claim 1, wherein each emitter in said plurality of R F emitters comprise a single integrated circuit and spaced in the integrated circuit such that the 26 DIVISIONAL PATENT APPLICATION NAVY CASE NO. 106054 RF energy radiated by each emitter in said plurality of emitters adds by a process of linear superposition during transmission through free space.
The system according to claim 1, wherein said graphene layer comprises a portion of a substantially planar annulus having a first radius and a second radius, said first radius and said second radius together defining a width of said annulus.
The system according to claim 1 0, wherein said integrated circuit comprising about million emitters, wherein said integrated circuit is about sixteen square inches.
The system according to claim 1 1, wherein said graphene layer comprises a portion of a substantially planar annulus having a first radius and a second radius, said first radius and said second radius together defining a width of said an n ulus. 29
A system, comprising: a plurality of radio frequency (R F) emitters, each emitter in said plurality of emitters, comprising: a substrate; an insulator bonded to said substrate; a graphene layer bonded to said insulator; a first electrical contact and a second electrical contact, said first electrical contact bonded over a first portion of said graphene layer and said second electrical contact bonded over a second portion of said graphene layer; wherein said graphene layer electrically coupled between said first electrical contact and said second electrical contact, said graphene layer is configured to receive a DC bias voltage between said first electrical contact and said second electrical contact; and an apexed photoelectric element bonded to said graphene layer, said apexed 27 DIVISIONAL PATENT APPLICATION NAVY CASE NO. 106054 photoelectric element configured to supply a pulsed burst of electrons to said graphene layer in response to light shining upon said apexed photoelectric element, wherein said graphene layer is configured to radiate RF energy in response to said pulsed burst of electrons.
The system according to claim 5, wherein each emitter in said plurality of RF emitters comprise a single integrated circuit and spaced in the integrated circuit such that the RF energy radiated by each emitter in said plurality of emitters adds by a process of linear superposition during transmission through free space.
A system, comprising: a plurality of radio frequency (R F) emitters, each emitter in said plurality of emitters, comprising: a substrate; an insulator bonded to said substrate; a graphene layer bonded to said insulator; a first electrical contact and a second electrical contact, said first electrical contact 28 DIVISIONAL PATENT APPLICATION NAVY CASE NO. 106054 bonded over a first portion of said graphene layer and said second electrical contact bonded over a second portion of said graphene layer; wherein said graphene layer electrically coupled between said first electrical contact and said second electrical contact, said graphene layer is configured to receive a DC bias voltage between said first electrical contact and said second electrical contact; and a plurality of apexed photoelectric elements bonded to said graphene layer, said plurality of apexed photoelectric elements configured to supply a pulsed burst of electrons to said graphene layer in response to light shining upon said plurality of apexed photoelectric elements, wherein said graphene layer is configured to radiate RF energy in response to said pulsed burst of electrons.
The system according to claim 9, wherein each emitter in said plurality of RF emitters comprise a single integrated circuit and spaced in the integrated circuit such that the RF energy radiated by each emitter in said plurality of emitters adds by a process of linear superposition during transmission through free space.
Layer stacks claimed or described, ordered top of device to substrate.
RF emitter with plurality of photoelectric elements
RF emitter with single apexed photoelectric element
Materials described outside the worked examples.
graphene
C
insulator
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 12, a DC bias input voltage can be applied (e.g., by a voltage source) between the first electrical contact 1208 and the second electrical contact 1212. F …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RF emission frequency range | 300–3000 GHz | C |
graphene layer inner radius (example value) | 95 nm |
Patent
Atlas literature
Patent
US 9,825,589Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 3 is top view, showing a cut plane 14-14, of a solid state nanoscale emitter having a plurality of apexed photoelectric elements, in accordance with …
FIG. 2 is a top view of a solid state nanoscale emitter, showing a cut plane 3-3, in accordance with various embodiments. [0012]
FIG. 3 is a cross-sectional view, perpendicular to the cut plane 3-3, of a solid state nanoscale emitter, in accordance with various embodiments. [0013]
FIG. 4 is a close-up view of a portion of the cross-sectional view of
FIG. 5 is a side view of a solid state nanoscale emitter, in which the emitter is exposed to an externally applied electromagnetic field and in accordance with …
FIG. 6 is a timing diagram of an example input waveform and an example output waveform of a solid state nanoscale emitter, in accordance with various …
FIG. 7 is a perspective view of a solid state nanoscale emitter having a plurality of photoelectric elements, in accordance with various embodiments. [0017]
FIG. 8 is a top view, showing a cut plane 9-9, of a solid state nanoscale emitter having a plurality of photoelectric elements, in accordance with various …
FIG. 9 is a cross-sectional view, perpendicular to the cut plane 9-9, of a solid state nanoscale emitter having a plurality of photoelectric elements, in …
FIG. 10 is a close-up view of a portion the cross-sectional view of
FIG. 11 is a side view of a solid state nanoscale emitter having a plurality of photoelectric elements, in accordance with various embodiments. [0021]
FIG. 12, a DC bias input voltage can be applied (e.g., by a voltage source) between the first electrical contact 1208 and the second electrical contact 1212. F …
FIG. 13. [0026]
FIG. 14 is a cross-sectional view, perpendicular to the cut plane 14-14, of a solid state nanoscale emitter having a plurality of apexed photoelectric …
FIG. 15) illustrating a portion of the cross-sectional view of the solid state nanoscale emitter 1200, is shown. The cutout section 16 illustrates, in greater …
FIG. 16 is a close-up view of a portion of the top view of
FIG. 17 is a side view of a solid state nanoscale emitter havin g a plurality of apexed photoelectric elements, in accordance with various embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A system, comprising: a plurality of radio frequency (RF) emitters, each emitter in said plurality of emitters, comprising: a substrate; an insulator bonded to said substra te; a graphene layer bonded to said insulator; a first electrical contact and a second electrical contact, said first electrical contact bonded over a first portion of said graphene layer and said second electrical contact bonded over a second portion of said graphene layer; wherein said graphene layer electrically coupled between said first electrical contact and said second electrical contact, said graphene layer is configured to receive a DC bias voltage between said first electrical contact and said second electrical contact; and a plurality of photoelectric elements bonded to said graphene layer, said plurality of photoelectric elements configured to supply a pulsed burst of electrons to said graphene layer in response to light shining upon said plurality of photoelectric elements, wherein said graphene layer is configured to radiate RF energy in response to said pulsed burst of electrons.
The system according to claim 1, wherein each emitter in said plurality of R F emitters comprise a single integrated circuit and spaced in the integrated circuit such that the 26 DIVISIONAL PATENT APPLICATION NAVY CASE NO. 106054 RF energy radiated by each emitter in said plurality of emitters adds by a process of linear superposition during transmission through free space.
The system according to claim 1, wherein said graphene layer comprises a portion of a substantially planar annulus having a first radius and a second radius, said first radius and said second radius together defining a width of said annulus.
The system according to claim 1 0, wherein said integrated circuit comprising about million emitters, wherein said integrated circuit is about sixteen square inches.
The system according to claim 1 1, wherein said graphene layer comprises a portion of a substantially planar annulus having a first radius and a second radius, said first radius and said second radius together defining a width of said an n ulus. 29
A system, comprising: a plurality of radio frequency (R F) emitters, each emitter in said plurality of emitters, comprising: a substrate; an insulator bonded to said substrate; a graphene layer bonded to said insulator; a first electrical contact and a second electrical contact, said first electrical contact bonded over a first portion of said graphene layer and said second electrical contact bonded over a second portion of said graphene layer; wherein said graphene layer electrically coupled between said first electrical contact and said second electrical contact, said graphene layer is configured to receive a DC bias voltage between said first electrical contact and said second electrical contact; and an apexed photoelectric element bonded to said graphene layer, said apexed 27 DIVISIONAL PATENT APPLICATION NAVY CASE NO. 106054 photoelectric element configured to supply a pulsed burst of electrons to said graphene layer in response to light shining upon said apexed photoelectric element, wherein said graphene layer is configured to radiate RF energy in response to said pulsed burst of electrons.
The system according to claim 5, wherein each emitter in said plurality of RF emitters comprise a single integrated circuit and spaced in the integrated circuit such that the RF energy radiated by each emitter in said plurality of emitters adds by a process of linear superposition during transmission through free space.
A system, comprising: a plurality of radio frequency (R F) emitters, each emitter in said plurality of emitters, comprising: a substrate; an insulator bonded to said substrate; a graphene layer bonded to said insulator; a first electrical contact and a second electrical contact, said first electrical contact 28 DIVISIONAL PATENT APPLICATION NAVY CASE NO. 106054 bonded over a first portion of said graphene layer and said second electrical contact bonded over a second portion of said graphene layer; wherein said graphene layer electrically coupled between said first electrical contact and said second electrical contact, said graphene layer is configured to receive a DC bias voltage between said first electrical contact and said second electrical contact; and a plurality of apexed photoelectric elements bonded to said graphene layer, said plurality of apexed photoelectric elements configured to supply a pulsed burst of electrons to said graphene layer in response to light shining upon said plurality of apexed photoelectric elements, wherein said graphene layer is configured to radiate RF energy in response to said pulsed burst of electrons.
The system according to claim 9, wherein each emitter in said plurality of RF emitters comprise a single integrated circuit and spaced in the integrated circuit such that the RF energy radiated by each emitter in said plurality of emitters adds by a process of linear superposition during transmission through free space.
Layer stacks claimed or described, ordered top of device to substrate.
RF emitter with plurality of photoelectric elements
RF emitter with single apexed photoelectric element
Materials described outside the worked examples.
graphene
C
insulator
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 12, a DC bias input voltage can be applied (e.g., by a voltage source) between the first electrical contact 1208 and the second electrical contact 1212. F …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RF emission frequency range | 300–3000 GHz | C |
graphene layer inner radius (example value) | 95 nm |
RF emitter with plurality of apexed photoelectric elements
semiconductor substrate
semiconductor substrate material (silicon, III-V, II-VI, binary, ternary, or organic semiconductor)
FIG. 15) illustrating a portion of the cross-sectional view of the solid state nanoscale emitter 1200, is shown. The cutout section 16 illustrates, in greater …
graphene layer outer radius (example value) | 955 nm | C |
graphene layer width range | 300–870 nm | C |
graphene layer leg (first/second portion) length range | 580–1740 nm | C |
Thickness | 100–500 nm | — |
Thickness | 400–1000 nm | — |
RF emitter with plurality of apexed photoelectric elements
semiconductor substrate
semiconductor substrate material (silicon, III-V, II-VI, binary, ternary, or organic semiconductor)
FIG. 15) illustrating a portion of the cross-sectional view of the solid state nanoscale emitter 1200, is shown. The cutout section 16 illustrates, in greater …
graphene layer outer radius (example value) | 955 nm | C |
graphene layer width range | 300–870 nm | C |
graphene layer leg (first/second portion) length range | 580–1740 nm | C |
Thickness | 100–500 nm | — |
Thickness | 400–1000 nm | — |
RF emitter with plurality of apexed photoelectric elements
semiconductor substrate
semiconductor substrate material (silicon, III-V, II-VI, binary, ternary, or organic semiconductor)
FIG. 15) illustrating a portion of the cross-sectional view of the solid state nanoscale emitter 1200, is shown. The cutout section 16 illustrates, in greater …
graphene layer outer radius (example value) | 955 nm | C |
graphene layer width range | 300–870 nm | C |
graphene layer leg (first/second portion) length range | 580–1740 nm | C |
Thickness | 100–500 nm | — |
Thickness | 400–1000 nm | — |
RF emitter with plurality of apexed photoelectric elements
semiconductor substrate
semiconductor substrate material (silicon, III-V, II-VI, binary, ternary, or organic semiconductor)
FIG. 15) illustrating a portion of the cross-sectional view of the solid state nanoscale emitter 1200, is shown. The cutout section 16 illustrates, in greater …
graphene layer outer radius (example value) | 955 nm | C |
graphene layer width range | 300–870 nm | C |
graphene layer leg (first/second portion) length range | 580–1740 nm | C |
Thickness | 100–500 nm | — |
Thickness | 400–1000 nm | — |