Patent
US 10,481,510PELLICLE FOR RETICLE AND MULTILAYER MIRROR
Andrei Mikhailovich YAKUNIN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,481,510Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 depicts a lithographic apparatus according to an embodiment of the invention;
Figure 2 is a view of a laser produced plasma source collector module of the apparatus of
Figure 3 is view of a membrane and particle trapping structure according to an embodiment of the present invention;
Figure 4 is a cross sectional view through an embodiment of a reticle which may form part of a lithographic apparatus according to the invention;
Figure 5 is a cross sectional view through an embodiment of a reticle which may form part of a lithographic apparatus according to the invention;
Figure 6 is a cross sectional view through an embodiment of a reticle which may form part of a lithographic apparatus according to the invention;
Figure 7 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 8 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 9 is a cross sectional view through an embodi m ent of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 10 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 11 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 12 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 13 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 14 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention; and
Figure 15 is a cross sectional view through an embodiment of a multi-layer mirror which may form part of a lithographic apparatus according to the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A spectral purity filter comprising a graphene structure having uniform thickness and homogeneous composition wherein the graphene has an EUV transmittance of greater than 85%. Currently amended
The spectral purity filter according to claim 1, comprising a graphene layer. Original
The spectral purity filter according to claim 1, comprising a graphene sheet. Original
The spectral purity filter according to claim 1, comprising graphene flakes, Original
The spectral purity filter according claim 1, further comprising a material which blocks out-of-band radiation and wherein the graphene is configured to protect the material from oxidation and/or outgassing. Original
The spectral purity filter according to claim 1, further comprising a grid, the graphene being disposed on the grid. Original
The spectral purity filter according to claim 1, further comprising a filter constructed and arranged to pass a selected band of radiation and to suppress out of band radiation. Original
The spectral purity filter according to claim 1, wherein the graphene comprises between 1 and 100 layers of graphene. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
spectral purity filter
Materials described outside the worked examples.
graphene
C
tungsten
W
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EUV transmittance of graphene structure | ≥ 85 | C |
Thickness | 10–500 nm |
Patent
Atlas literature
Patent
US 10,481,510Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 depicts a lithographic apparatus according to an embodiment of the invention;
Figure 2 is a view of a laser produced plasma source collector module of the apparatus of
Figure 3 is view of a membrane and particle trapping structure according to an embodiment of the present invention;
Figure 4 is a cross sectional view through an embodiment of a reticle which may form part of a lithographic apparatus according to the invention;
Figure 5 is a cross sectional view through an embodiment of a reticle which may form part of a lithographic apparatus according to the invention;
Figure 6 is a cross sectional view through an embodiment of a reticle which may form part of a lithographic apparatus according to the invention;
Figure 7 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 8 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 9 is a cross sectional view through an embodi m ent of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 10 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 11 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 12 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 13 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 14 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention; and
Figure 15 is a cross sectional view through an embodiment of a multi-layer mirror which may form part of a lithographic apparatus according to the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A spectral purity filter comprising a graphene structure having uniform thickness and homogeneous composition wherein the graphene has an EUV transmittance of greater than 85%. Currently amended
The spectral purity filter according to claim 1, comprising a graphene layer. Original
The spectral purity filter according to claim 1, comprising a graphene sheet. Original
The spectral purity filter according to claim 1, comprising graphene flakes, Original
The spectral purity filter according claim 1, further comprising a material which blocks out-of-band radiation and wherein the graphene is configured to protect the material from oxidation and/or outgassing. Original
The spectral purity filter according to claim 1, further comprising a grid, the graphene being disposed on the grid. Original
The spectral purity filter according to claim 1, further comprising a filter constructed and arranged to pass a selected band of radiation and to suppress out of band radiation. Original
The spectral purity filter according to claim 1, wherein the graphene comprises between 1 and 100 layers of graphene. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
spectral purity filter
Materials described outside the worked examples.
graphene
C
tungsten
W
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EUV transmittance of graphene structure | ≥ 85 | C |
Thickness | 10–500 nm |
Patent
Atlas literature
Patent
US 10,481,510Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 depicts a lithographic apparatus according to an embodiment of the invention;
Figure 2 is a view of a laser produced plasma source collector module of the apparatus of
Figure 3 is view of a membrane and particle trapping structure according to an embodiment of the present invention;
Figure 4 is a cross sectional view through an embodiment of a reticle which may form part of a lithographic apparatus according to the invention;
Figure 5 is a cross sectional view through an embodiment of a reticle which may form part of a lithographic apparatus according to the invention;
Figure 6 is a cross sectional view through an embodiment of a reticle which may form part of a lithographic apparatus according to the invention;
Figure 7 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 8 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 9 is a cross sectional view through an embodi m ent of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 10 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 11 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 12 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 13 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 14 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention; and
Figure 15 is a cross sectional view through an embodiment of a multi-layer mirror which may form part of a lithographic apparatus according to the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A spectral purity filter comprising a graphene structure having uniform thickness and homogeneous composition wherein the graphene has an EUV transmittance of greater than 85%. Currently amended
The spectral purity filter according to claim 1, comprising a graphene layer. Original
The spectral purity filter according to claim 1, comprising a graphene sheet. Original
The spectral purity filter according to claim 1, comprising graphene flakes, Original
The spectral purity filter according claim 1, further comprising a material which blocks out-of-band radiation and wherein the graphene is configured to protect the material from oxidation and/or outgassing. Original
The spectral purity filter according to claim 1, further comprising a grid, the graphene being disposed on the grid. Original
The spectral purity filter according to claim 1, further comprising a filter constructed and arranged to pass a selected band of radiation and to suppress out of band radiation. Original
The spectral purity filter according to claim 1, wherein the graphene comprises between 1 and 100 layers of graphene. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
spectral purity filter
Materials described outside the worked examples.
graphene
C
tungsten
W
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EUV transmittance of graphene structure | ≥ 85 | C |
Thickness | 10–500 nm |
Patent
Atlas literature
Patent
US 10,481,510Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 depicts a lithographic apparatus according to an embodiment of the invention;
Figure 2 is a view of a laser produced plasma source collector module of the apparatus of
Figure 3 is view of a membrane and particle trapping structure according to an embodiment of the present invention;
Figure 4 is a cross sectional view through an embodiment of a reticle which may form part of a lithographic apparatus according to the invention;
Figure 5 is a cross sectional view through an embodiment of a reticle which may form part of a lithographic apparatus according to the invention;
Figure 6 is a cross sectional view through an embodiment of a reticle which may form part of a lithographic apparatus according to the invention;
Figure 7 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 8 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 9 is a cross sectional view through an embodi m ent of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 10 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 11 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 12 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 13 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention;
Figure 14 is a cross sectional view through an embodiment of a spectral purity filter which may form part of a lithographic apparatus according to the invention; and
Figure 15 is a cross sectional view through an embodiment of a multi-layer mirror which may form part of a lithographic apparatus according to the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A spectral purity filter comprising a graphene structure having uniform thickness and homogeneous composition wherein the graphene has an EUV transmittance of greater than 85%. Currently amended
The spectral purity filter according to claim 1, comprising a graphene layer. Original
The spectral purity filter according to claim 1, comprising a graphene sheet. Original
The spectral purity filter according to claim 1, comprising graphene flakes, Original
The spectral purity filter according claim 1, further comprising a material which blocks out-of-band radiation and wherein the graphene is configured to protect the material from oxidation and/or outgassing. Original
The spectral purity filter according to claim 1, further comprising a grid, the graphene being disposed on the grid. Original
The spectral purity filter according to claim 1, further comprising a filter constructed and arranged to pass a selected band of radiation and to suppress out of band radiation. Original
The spectral purity filter according to claim 1, wherein the graphene comprises between 1 and 100 layers of graphene. Previously presented
Layer stacks claimed or described, ordered top of device to substrate.
spectral purity filter
Materials described outside the worked examples.
graphene
C
tungsten
W
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EUV transmittance of graphene structure | ≥ 85 | C |
Thickness | 10–500 nm |
molybdenum
Mo
silicon
Si
zirconium
Zr
| — |
Thickness | 50–100 nm | — |
Thickness | 6–7 nm | — |
Pressure | ≤ 1 pa | — |
Thickness | ≤ 1 nm | — |
Pressure | ≥ 5 pa | — |
molybdenum
Mo
silicon
Si
zirconium
Zr
| — |
Thickness | 50–100 nm | — |
Thickness | 6–7 nm | — |
Pressure | ≤ 1 pa | — |
Thickness | ≤ 1 nm | — |
Pressure | ≥ 5 pa | — |
molybdenum
Mo
silicon
Si
zirconium
Zr
| — |
Thickness | 50–100 nm | — |
Thickness | 6–7 nm | — |
Pressure | ≤ 1 pa | — |
Thickness | ≤ 1 nm | — |
Pressure | ≥ 5 pa | — |
molybdenum
Mo
silicon
Si
zirconium
Zr
| — |
Thickness | 50–100 nm | — |
Thickness | 6–7 nm | — |
Pressure | ≤ 1 pa | — |
Thickness | ≤ 1 nm | — |
Pressure | ≥ 5 pa | — |