Patent
US 10,854,724ONE-DIMENSIONAL NANOSTRUCTURE GROWTH ON GRAPHENE AND DEVICES THEREOF
Che-Wei Yang
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,854,724Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B are examples of a vertical and a horizontal GAA device, respectively. The device structures of FIGS. lA/1 B are only briefly described for the …
FIG. 2 0 B illustrates a view of a source/drain region of a GAA device taken along section B-B' of
FIGS. 3-19 illustrate cross sectional views of embodiments of a GAA device, where nanobar growth proceeds according to a one-sided nanobar growth process, and …
FIG. 4, and in an embodiment of block 206, a metal layer 402 is formed over the patterned first insulating layer 304, filling the at least one recess 306. In …
FIGS. 5 and 6, and in an embodiment of block 210, an insulating layer 604 may be formed over the insulating layer 304 and over the metal portion 402A. In some …
FIG. 6, one or more of the steps of the method 200 may be repeated so as to build up a structure (e.g., in a vertical direction, Z) including the plurality of …
FIG. 7, and in an embodiment of block 212, the first and second insulating layers 304/604 (e.g., the composite insulating layer 605) are patterned. In some …
FIGS. 8 and 9, and in an embodiment of block 216, a graphene layer 902 is formed on the surface 402B of the metal portion 402A. In addition, the graphene layer …
FIGS. 9 and 10, and in an embodiment of block 218, a nanobar 1002 is formed on the graphene layer 902, where growth of the nanobars proceeds in a direction N …
FIGS. 10 and 11, and in an embodiment of block 220, an insulating layer 1102 may be formed over the composite insulating layer 605 and over the nanobar 1002. …
FIGS. 11 and 12, and in an embodiment of block 222, the insulating layer 1102 is patterned. In some embodiments, photolithography and etching processes may be …
FIG. 12, a gate region is patterned within the insulating layer 3102. In various embodiments, the patterning of the insulating layer 3 102 may be substantially …
FIG. 13. In various embodiments, the dielectric layer 1302 may include a high-K dielectric layer, or in some cases may include a high-K layer formed over an …
FIG. 14, and in a further embodiment of block 224, after formation of the dielectric layer 1302, a gate metal layer 1402 is formed. In various embodiments, the …
FIGS. 15 and 16, and in an embodiment of block 228, the insulating layer 1102 is patterned. In some embodiments, photolithography and etching processes may be …
FIGS. 16 and 17, after patterning the source/drain regions and forming the recesses 1602, a source and drain metal layer 1702 may be formed. In various …
FIG. 17. In some embodiments, the source/drain metal layer 1702 may include a conductive layer such as Cr, Ti, Au, Ni, Pd, Ir, Ag, Pt, Cu, Co, Al, Fe, …
FIGS. 18 and 19, and in an embodiment of block 234, a dielectric layer 1902 is formed over the device 300. In some embodiments, the dielectric layer 1902 …
FIG. 19, in accordance with some embodiments; [0010]
FIG. 20A illustrates a view of a gate region of a GAA device taken along section A-A' of
FIGS. 21 and 22 illustrate a cross sectional and top-down view, respectively, of embodiments of a GAA device, including a plurality of nanobars formed …
FIG. 22 illustrates that one or more of the steps of the method 200 may be repeated so as to build up a structure in a horizontal direction Y (e.g., in …
FIGS. 23-39 illustrate cross sectional views of embodiments of a GAA device, where nanobar growth proceeds according to a two-sided nanobar growth process, and …
FIG. 24, and in at least some aspects similar to the example of
FIG. 25, and in an embodiment of block 208, a CMP process is performed, which may result in metal portions 2402A and 2402B formed within the recesses 2306, …
FIG. 26, in an embodiment of block 210 and in at least some aspects similar to the example of
FIGS. 27 and 28, an etching process (e.g., an isotropic etching process) of the composite insulating layer 2605 is performed which increases the depth and …
FIG. 29. In addition, the graphene layer 2902 may define a vertical plane parallel to the surface 240 2C, and the graphene layer 2904 may define a vertical plane …
FIG. 30) may have more mechanical strength and be more structurally stable than a nanobar formed using a one-sided nanobar growth process. [0056] Referring to …
FIG. 31. In various embodiments, formation of the insulating layer 3102 may be substantially the same as formation of the insulating layer 1102, discussed …
FIG. 32, in an embodiment of block 222 and in at least some aspects similar to the example of
FIGS. 33 and 34, in an embodiment of block 224 and in at least some aspects similar to the example of
FIG. 35, in an embodiment of block 226 and in at least some aspects similar to the example of
FIG. 36, in an embodiment of block 228 and in at least some aspects similar to the example of
FIG. 37, and in an embodiment of block 230, a source and drain metal layer 3702 may be formed. In various embodiments, formation of the source and drain metal …
FIG. 38, and in an embodiment of block 232, a CMP process is performed which removes excess portions of the source/drain metal layer 3702, while substantially …
FIG. 39, in an embodiment of block 234 and in at least some aspects similar to the example of
FIGS. 40 and 41 illustrate a cross sectional and top-down view, respectively, of embodiments of a GAA device, including a plurality of nanobars formed …
FIG. 41 illustrates that one or more of the steps of the method 200 may be repeated so as to build up a structure in a horizontal direction Y (e.g., in …
FIGS. 42A/42B provide a flow chart of a method of fabricating a GAA device, including a supporting cavity, according to one or more aspects of the present …
FIGS. 43-62 illustrate cross sectional views of embodiments of a GAA device, including a supporting cavity, and corresponding to one or more steps of the …
FIGS. 44 and 45. [0070] Thereafter, the method 4200 departs somewhat from the method 200, discussed above. In particular, the method 4200 proceeds to block …
FIG. 46. Next, and in embodiments of blocks 4212 and 4214 of the method 4200, a sacrificial layer 4702 is formed over the device 4300 and a CMP process is …
FIGS. 47 and 48. In some embodiments, the sacrificial layer 4702 includes silicon nitride. In various examples, the sacrificial layer 4702 includes a material …
FIG. 49. In some embodiments, the stacked insulating layers 4304/4902 may be substantially the same as the stacked insulating layers 304/604 described above …
FIG. 50. Patterning of the composite layer 4905 results in a recess 5002, having a depth D₂ and a width W2, within the composite insulating layer 4905, thereby …
FIG. 51. In addition, as shown in
FIG. 52. In various examples, the sacrificial layer 4702 may be removed by a wet etch, a dry etch, and/or a combination thereof. Moreover, in some embodiments, …
FIG. 53, and in accordance with processes as described above. In addition, the graphene layer 5302 may define a vertical plane parallel to the surface 4402B. …
FIG. 54, a nanobar 5402 is formed. In various embodiments, the nanobar 5402 is formed according to one or more of the methods previously discussed. In …
FIG. 55, a gate region is patterned within the insulating layer 5502. In various embodiments, the patterning of the insulating layer 5502 is done to form a …
FIGS. 56 and 57, in an embodiment of the following step of the method 4200 (block 4232), a gate dielectric layer 5602 is formed over the device 4300 (e.g., …
FIG. 58. [0077] Thereafter, with reference to
FIG. 59, in an embodiment of block 4236, source and drain regions are patterned within the insulating layer 5502. By way of example, the patterning of the …
FIG. 60. In an embodiment of block 4240, and with reference to
FIG. 61, a CMP process is performed which removes excess portions of the source/drain metal layer 6002, while substantially planarizing a top surface of the …
FIG. 62. In some embodiments, a CMP process may be performed after formation of the source/drain contacts 6202 and the gate contact 6204 to remove excess …
FIGS. 63 and 64 illustrate a cross sectional and top-down view, respectively, of embodiments of a GAA device, including a supporting cavity, and corresponding …
FIG. 64 illustrates that one or more of the steps of the method 4200 may be repeated so as to build up a structure in a horizontal direction Y (e.g., in …
FIG. 65 illustrates an embodiment of a geometrical configuration of a nanobar, according to some embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device, comprising: a substrate defining a horizontal plane; and a nanobar disposed on a graphene layer over the substrate, wherein the graphene layer defines a vertical plane perpendicular to the horizontal plane, and wherein the nanobar extends from the graphene layer and along a direction normal to the vertical plane. Original
The device of claim 1, further comprising: the substrate including a patterned insulating layer formed thereon; and a metal portion disposed within the patterned insulating layer, wherein the metal portion includes the graphene layer disposed along a lateral sidewall of the metal portion. Original
The device of claim 1, further comprising: a gate dielectric layer that surrounds the nanobar in a gate region of the nanobar; a gate metal layer that surrounds the gate dielectric layer; and a source/drain metal layer surrounding the nanobar in source/drain regions of the nanobar, wherein the source/drain regions are disposed adjacent to and on either side of the gate region. Original
The device of claim 1, wherein the nanobar includes at least one of an I nGaAs nanobar, an InAs nanobar, a GaAs nanobar, a core-shell nanobar, and a core-multishell nanobar. Original
A device, comprising: a substrate that defines a horizontal plane; a first graphene layer disposed over the substrate, wherein the first graphene layer defines a first vertical plane perpendicular to the horizontal plane; and a first nanobar formed on the first graphene layer, wherein the first nanobar extends in a first direction parallel to the horizontal plane and normal to the first vertical plane defined by the first graphene layer. Original
The device of claim 7, further comprising: the substrate including an insulating layer disposed thereon, wherein the insulating layer includes a recess having a first sidewall and a second sidewall opposite the first sidewall; and a first metal portion formed within the insulating layer, wherein a first lateral surface of the first metal portion is coplanar with the first sidewall of the recess; wherein the first graphene layer is disposed on the first lateral surface, and wherein the first vertical plane is parallel to the first lateral surface; and wherein the direction parallel to the horizontal plane and normal to the first vertical plane is independent of an orientation of the substrate. Original
A device, comprising: an insulating layer including a recess having a first sidewall, a second sidewall opposite the first sidewall, and a third sidewall interposing the first and second sidewalls, wherein the third sidewall is perpendicular to each of the first and second sidewalls, and wherein the third sidewall defines a horizontal plane; a cavity formed within the insulating layer and along the second sidewall of the recess; and a nanobar formed on a carbon-based layer within the recess, wherein the nanobar extends in a first direction parallel to the horizontal plane and normal to a vertical plane defined by the carbon-based layer, and wherein the nanobar extends into the cavity formed within the second sidewall of the recess. Currently amended
The device of claim 17, further comprising: a metal layer formed within the insulating layer, wherein the metal layer includes the carbon-based layer disposed on a first lateral surface of the metal layer, and wherein the carbon-based layer defines a vertical plane perpendicular to the horizontal plane and parallel to the first lateral surface; and wherein the cavity is disposed opposite the first lateral surface. Currently amended
The device of claim 17, wherein the cavity structurally supports an end portion of the
Layer stacks claimed or described, ordered top of device to substrate.
horizontal GAA device with single nanobar on graphene
gate-all-around (GAA) FET with surrounding gate
Materials described outside the worked examples.
graphene
nanobar
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–1000 nm | — |
Thickness |
Patent
Atlas literature
Patent
US 10,854,724Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B are examples of a vertical and a horizontal GAA device, respectively. The device structures of FIGS. lA/1 B are only briefly described for the …
FIG. 2 0 B illustrates a view of a source/drain region of a GAA device taken along section B-B' of
FIGS. 3-19 illustrate cross sectional views of embodiments of a GAA device, where nanobar growth proceeds according to a one-sided nanobar growth process, and …
FIG. 4, and in an embodiment of block 206, a metal layer 402 is formed over the patterned first insulating layer 304, filling the at least one recess 306. In …
FIGS. 5 and 6, and in an embodiment of block 210, an insulating layer 604 may be formed over the insulating layer 304 and over the metal portion 402A. In some …
FIG. 6, one or more of the steps of the method 200 may be repeated so as to build up a structure (e.g., in a vertical direction, Z) including the plurality of …
FIG. 7, and in an embodiment of block 212, the first and second insulating layers 304/604 (e.g., the composite insulating layer 605) are patterned. In some …
FIGS. 8 and 9, and in an embodiment of block 216, a graphene layer 902 is formed on the surface 402B of the metal portion 402A. In addition, the graphene layer …
FIGS. 9 and 10, and in an embodiment of block 218, a nanobar 1002 is formed on the graphene layer 902, where growth of the nanobars proceeds in a direction N …
FIGS. 10 and 11, and in an embodiment of block 220, an insulating layer 1102 may be formed over the composite insulating layer 605 and over the nanobar 1002. …
FIGS. 11 and 12, and in an embodiment of block 222, the insulating layer 1102 is patterned. In some embodiments, photolithography and etching processes may be …
FIG. 12, a gate region is patterned within the insulating layer 3102. In various embodiments, the patterning of the insulating layer 3 102 may be substantially …
FIG. 13. In various embodiments, the dielectric layer 1302 may include a high-K dielectric layer, or in some cases may include a high-K layer formed over an …
FIG. 14, and in a further embodiment of block 224, after formation of the dielectric layer 1302, a gate metal layer 1402 is formed. In various embodiments, the …
FIGS. 15 and 16, and in an embodiment of block 228, the insulating layer 1102 is patterned. In some embodiments, photolithography and etching processes may be …
FIGS. 16 and 17, after patterning the source/drain regions and forming the recesses 1602, a source and drain metal layer 1702 may be formed. In various …
FIG. 17. In some embodiments, the source/drain metal layer 1702 may include a conductive layer such as Cr, Ti, Au, Ni, Pd, Ir, Ag, Pt, Cu, Co, Al, Fe, …
FIGS. 18 and 19, and in an embodiment of block 234, a dielectric layer 1902 is formed over the device 300. In some embodiments, the dielectric layer 1902 …
FIG. 19, in accordance with some embodiments; [0010]
FIG. 20A illustrates a view of a gate region of a GAA device taken along section A-A' of
FIGS. 21 and 22 illustrate a cross sectional and top-down view, respectively, of embodiments of a GAA device, including a plurality of nanobars formed …
FIG. 22 illustrates that one or more of the steps of the method 200 may be repeated so as to build up a structure in a horizontal direction Y (e.g., in …
FIGS. 23-39 illustrate cross sectional views of embodiments of a GAA device, where nanobar growth proceeds according to a two-sided nanobar growth process, and …
FIG. 24, and in at least some aspects similar to the example of
FIG. 25, and in an embodiment of block 208, a CMP process is performed, which may result in metal portions 2402A and 2402B formed within the recesses 2306, …
FIG. 26, in an embodiment of block 210 and in at least some aspects similar to the example of
FIGS. 27 and 28, an etching process (e.g., an isotropic etching process) of the composite insulating layer 2605 is performed which increases the depth and …
FIG. 29. In addition, the graphene layer 2902 may define a vertical plane parallel to the surface 240 2C, and the graphene layer 2904 may define a vertical plane …
FIG. 30) may have more mechanical strength and be more structurally stable than a nanobar formed using a one-sided nanobar growth process. [0056] Referring to …
FIG. 31. In various embodiments, formation of the insulating layer 3102 may be substantially the same as formation of the insulating layer 1102, discussed …
FIG. 32, in an embodiment of block 222 and in at least some aspects similar to the example of
FIGS. 33 and 34, in an embodiment of block 224 and in at least some aspects similar to the example of
FIG. 35, in an embodiment of block 226 and in at least some aspects similar to the example of
FIG. 36, in an embodiment of block 228 and in at least some aspects similar to the example of
FIG. 37, and in an embodiment of block 230, a source and drain metal layer 3702 may be formed. In various embodiments, formation of the source and drain metal …
FIG. 38, and in an embodiment of block 232, a CMP process is performed which removes excess portions of the source/drain metal layer 3702, while substantially …
FIG. 39, in an embodiment of block 234 and in at least some aspects similar to the example of
FIGS. 40 and 41 illustrate a cross sectional and top-down view, respectively, of embodiments of a GAA device, including a plurality of nanobars formed …
FIG. 41 illustrates that one or more of the steps of the method 200 may be repeated so as to build up a structure in a horizontal direction Y (e.g., in …
FIGS. 42A/42B provide a flow chart of a method of fabricating a GAA device, including a supporting cavity, according to one or more aspects of the present …
FIGS. 43-62 illustrate cross sectional views of embodiments of a GAA device, including a supporting cavity, and corresponding to one or more steps of the …
FIGS. 44 and 45. [0070] Thereafter, the method 4200 departs somewhat from the method 200, discussed above. In particular, the method 4200 proceeds to block …
FIG. 46. Next, and in embodiments of blocks 4212 and 4214 of the method 4200, a sacrificial layer 4702 is formed over the device 4300 and a CMP process is …
FIGS. 47 and 48. In some embodiments, the sacrificial layer 4702 includes silicon nitride. In various examples, the sacrificial layer 4702 includes a material …
FIG. 49. In some embodiments, the stacked insulating layers 4304/4902 may be substantially the same as the stacked insulating layers 304/604 described above …
FIG. 50. Patterning of the composite layer 4905 results in a recess 5002, having a depth D₂ and a width W2, within the composite insulating layer 4905, thereby …
FIG. 51. In addition, as shown in
FIG. 52. In various examples, the sacrificial layer 4702 may be removed by a wet etch, a dry etch, and/or a combination thereof. Moreover, in some embodiments, …
FIG. 53, and in accordance with processes as described above. In addition, the graphene layer 5302 may define a vertical plane parallel to the surface 4402B. …
FIG. 54, a nanobar 5402 is formed. In various embodiments, the nanobar 5402 is formed according to one or more of the methods previously discussed. In …
FIG. 55, a gate region is patterned within the insulating layer 5502. In various embodiments, the patterning of the insulating layer 5502 is done to form a …
FIGS. 56 and 57, in an embodiment of the following step of the method 4200 (block 4232), a gate dielectric layer 5602 is formed over the device 4300 (e.g., …
FIG. 58. [0077] Thereafter, with reference to
FIG. 59, in an embodiment of block 4236, source and drain regions are patterned within the insulating layer 5502. By way of example, the patterning of the …
FIG. 60. In an embodiment of block 4240, and with reference to
FIG. 61, a CMP process is performed which removes excess portions of the source/drain metal layer 6002, while substantially planarizing a top surface of the …
FIG. 62. In some embodiments, a CMP process may be performed after formation of the source/drain contacts 6202 and the gate contact 6204 to remove excess …
FIGS. 63 and 64 illustrate a cross sectional and top-down view, respectively, of embodiments of a GAA device, including a supporting cavity, and corresponding …
FIG. 64 illustrates that one or more of the steps of the method 4200 may be repeated so as to build up a structure in a horizontal direction Y (e.g., in …
FIG. 65 illustrates an embodiment of a geometrical configuration of a nanobar, according to some embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device, comprising: a substrate defining a horizontal plane; and a nanobar disposed on a graphene layer over the substrate, wherein the graphene layer defines a vertical plane perpendicular to the horizontal plane, and wherein the nanobar extends from the graphene layer and along a direction normal to the vertical plane. Original
The device of claim 1, further comprising: the substrate including a patterned insulating layer formed thereon; and a metal portion disposed within the patterned insulating layer, wherein the metal portion includes the graphene layer disposed along a lateral sidewall of the metal portion. Original
The device of claim 1, further comprising: a gate dielectric layer that surrounds the nanobar in a gate region of the nanobar; a gate metal layer that surrounds the gate dielectric layer; and a source/drain metal layer surrounding the nanobar in source/drain regions of the nanobar, wherein the source/drain regions are disposed adjacent to and on either side of the gate region. Original
The device of claim 1, wherein the nanobar includes at least one of an I nGaAs nanobar, an InAs nanobar, a GaAs nanobar, a core-shell nanobar, and a core-multishell nanobar. Original
A device, comprising: a substrate that defines a horizontal plane; a first graphene layer disposed over the substrate, wherein the first graphene layer defines a first vertical plane perpendicular to the horizontal plane; and a first nanobar formed on the first graphene layer, wherein the first nanobar extends in a first direction parallel to the horizontal plane and normal to the first vertical plane defined by the first graphene layer. Original
The device of claim 7, further comprising: the substrate including an insulating layer disposed thereon, wherein the insulating layer includes a recess having a first sidewall and a second sidewall opposite the first sidewall; and a first metal portion formed within the insulating layer, wherein a first lateral surface of the first metal portion is coplanar with the first sidewall of the recess; wherein the first graphene layer is disposed on the first lateral surface, and wherein the first vertical plane is parallel to the first lateral surface; and wherein the direction parallel to the horizontal plane and normal to the first vertical plane is independent of an orientation of the substrate. Original
A device, comprising: an insulating layer including a recess having a first sidewall, a second sidewall opposite the first sidewall, and a third sidewall interposing the first and second sidewalls, wherein the third sidewall is perpendicular to each of the first and second sidewalls, and wherein the third sidewall defines a horizontal plane; a cavity formed within the insulating layer and along the second sidewall of the recess; and a nanobar formed on a carbon-based layer within the recess, wherein the nanobar extends in a first direction parallel to the horizontal plane and normal to a vertical plane defined by the carbon-based layer, and wherein the nanobar extends into the cavity formed within the second sidewall of the recess. Currently amended
The device of claim 17, further comprising: a metal layer formed within the insulating layer, wherein the metal layer includes the carbon-based layer disposed on a first lateral surface of the metal layer, and wherein the carbon-based layer defines a vertical plane perpendicular to the horizontal plane and parallel to the first lateral surface; and wherein the cavity is disposed opposite the first lateral surface. Currently amended
The device of claim 17, wherein the cavity structurally supports an end portion of the
Layer stacks claimed or described, ordered top of device to substrate.
horizontal GAA device with single nanobar on graphene
gate-all-around (GAA) FET with surrounding gate
Materials described outside the worked examples.
graphene
nanobar
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–1000 nm | — |
Thickness |
Patent
Atlas literature
Patent
US 10,854,724Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B are examples of a vertical and a horizontal GAA device, respectively. The device structures of FIGS. lA/1 B are only briefly described for the …
FIG. 2 0 B illustrates a view of a source/drain region of a GAA device taken along section B-B' of
FIGS. 3-19 illustrate cross sectional views of embodiments of a GAA device, where nanobar growth proceeds according to a one-sided nanobar growth process, and …
FIG. 4, and in an embodiment of block 206, a metal layer 402 is formed over the patterned first insulating layer 304, filling the at least one recess 306. In …
FIGS. 5 and 6, and in an embodiment of block 210, an insulating layer 604 may be formed over the insulating layer 304 and over the metal portion 402A. In some …
FIG. 6, one or more of the steps of the method 200 may be repeated so as to build up a structure (e.g., in a vertical direction, Z) including the plurality of …
FIG. 7, and in an embodiment of block 212, the first and second insulating layers 304/604 (e.g., the composite insulating layer 605) are patterned. In some …
FIGS. 8 and 9, and in an embodiment of block 216, a graphene layer 902 is formed on the surface 402B of the metal portion 402A. In addition, the graphene layer …
FIGS. 9 and 10, and in an embodiment of block 218, a nanobar 1002 is formed on the graphene layer 902, where growth of the nanobars proceeds in a direction N …
FIGS. 10 and 11, and in an embodiment of block 220, an insulating layer 1102 may be formed over the composite insulating layer 605 and over the nanobar 1002. …
FIGS. 11 and 12, and in an embodiment of block 222, the insulating layer 1102 is patterned. In some embodiments, photolithography and etching processes may be …
FIG. 12, a gate region is patterned within the insulating layer 3102. In various embodiments, the patterning of the insulating layer 3 102 may be substantially …
FIG. 13. In various embodiments, the dielectric layer 1302 may include a high-K dielectric layer, or in some cases may include a high-K layer formed over an …
FIG. 14, and in a further embodiment of block 224, after formation of the dielectric layer 1302, a gate metal layer 1402 is formed. In various embodiments, the …
FIGS. 15 and 16, and in an embodiment of block 228, the insulating layer 1102 is patterned. In some embodiments, photolithography and etching processes may be …
FIGS. 16 and 17, after patterning the source/drain regions and forming the recesses 1602, a source and drain metal layer 1702 may be formed. In various …
FIG. 17. In some embodiments, the source/drain metal layer 1702 may include a conductive layer such as Cr, Ti, Au, Ni, Pd, Ir, Ag, Pt, Cu, Co, Al, Fe, …
FIGS. 18 and 19, and in an embodiment of block 234, a dielectric layer 1902 is formed over the device 300. In some embodiments, the dielectric layer 1902 …
FIG. 19, in accordance with some embodiments; [0010]
FIG. 20A illustrates a view of a gate region of a GAA device taken along section A-A' of
FIGS. 21 and 22 illustrate a cross sectional and top-down view, respectively, of embodiments of a GAA device, including a plurality of nanobars formed …
FIG. 22 illustrates that one or more of the steps of the method 200 may be repeated so as to build up a structure in a horizontal direction Y (e.g., in …
FIGS. 23-39 illustrate cross sectional views of embodiments of a GAA device, where nanobar growth proceeds according to a two-sided nanobar growth process, and …
FIG. 24, and in at least some aspects similar to the example of
FIG. 25, and in an embodiment of block 208, a CMP process is performed, which may result in metal portions 2402A and 2402B formed within the recesses 2306, …
FIG. 26, in an embodiment of block 210 and in at least some aspects similar to the example of
FIGS. 27 and 28, an etching process (e.g., an isotropic etching process) of the composite insulating layer 2605 is performed which increases the depth and …
FIG. 29. In addition, the graphene layer 2902 may define a vertical plane parallel to the surface 240 2C, and the graphene layer 2904 may define a vertical plane …
FIG. 30) may have more mechanical strength and be more structurally stable than a nanobar formed using a one-sided nanobar growth process. [0056] Referring to …
FIG. 31. In various embodiments, formation of the insulating layer 3102 may be substantially the same as formation of the insulating layer 1102, discussed …
FIG. 32, in an embodiment of block 222 and in at least some aspects similar to the example of
FIGS. 33 and 34, in an embodiment of block 224 and in at least some aspects similar to the example of
FIG. 35, in an embodiment of block 226 and in at least some aspects similar to the example of
FIG. 36, in an embodiment of block 228 and in at least some aspects similar to the example of
FIG. 37, and in an embodiment of block 230, a source and drain metal layer 3702 may be formed. In various embodiments, formation of the source and drain metal …
FIG. 38, and in an embodiment of block 232, a CMP process is performed which removes excess portions of the source/drain metal layer 3702, while substantially …
FIG. 39, in an embodiment of block 234 and in at least some aspects similar to the example of
FIGS. 40 and 41 illustrate a cross sectional and top-down view, respectively, of embodiments of a GAA device, including a plurality of nanobars formed …
FIG. 41 illustrates that one or more of the steps of the method 200 may be repeated so as to build up a structure in a horizontal direction Y (e.g., in …
FIGS. 42A/42B provide a flow chart of a method of fabricating a GAA device, including a supporting cavity, according to one or more aspects of the present …
FIGS. 43-62 illustrate cross sectional views of embodiments of a GAA device, including a supporting cavity, and corresponding to one or more steps of the …
FIGS. 44 and 45. [0070] Thereafter, the method 4200 departs somewhat from the method 200, discussed above. In particular, the method 4200 proceeds to block …
FIG. 46. Next, and in embodiments of blocks 4212 and 4214 of the method 4200, a sacrificial layer 4702 is formed over the device 4300 and a CMP process is …
FIGS. 47 and 48. In some embodiments, the sacrificial layer 4702 includes silicon nitride. In various examples, the sacrificial layer 4702 includes a material …
FIG. 49. In some embodiments, the stacked insulating layers 4304/4902 may be substantially the same as the stacked insulating layers 304/604 described above …
FIG. 50. Patterning of the composite layer 4905 results in a recess 5002, having a depth D₂ and a width W2, within the composite insulating layer 4905, thereby …
FIG. 51. In addition, as shown in
FIG. 52. In various examples, the sacrificial layer 4702 may be removed by a wet etch, a dry etch, and/or a combination thereof. Moreover, in some embodiments, …
FIG. 53, and in accordance with processes as described above. In addition, the graphene layer 5302 may define a vertical plane parallel to the surface 4402B. …
FIG. 54, a nanobar 5402 is formed. In various embodiments, the nanobar 5402 is formed according to one or more of the methods previously discussed. In …
FIG. 55, a gate region is patterned within the insulating layer 5502. In various embodiments, the patterning of the insulating layer 5502 is done to form a …
FIGS. 56 and 57, in an embodiment of the following step of the method 4200 (block 4232), a gate dielectric layer 5602 is formed over the device 4300 (e.g., …
FIG. 58. [0077] Thereafter, with reference to
FIG. 59, in an embodiment of block 4236, source and drain regions are patterned within the insulating layer 5502. By way of example, the patterning of the …
FIG. 60. In an embodiment of block 4240, and with reference to
FIG. 61, a CMP process is performed which removes excess portions of the source/drain metal layer 6002, while substantially planarizing a top surface of the …
FIG. 62. In some embodiments, a CMP process may be performed after formation of the source/drain contacts 6202 and the gate contact 6204 to remove excess …
FIGS. 63 and 64 illustrate a cross sectional and top-down view, respectively, of embodiments of a GAA device, including a supporting cavity, and corresponding …
FIG. 64 illustrates that one or more of the steps of the method 4200 may be repeated so as to build up a structure in a horizontal direction Y (e.g., in …
FIG. 65 illustrates an embodiment of a geometrical configuration of a nanobar, according to some embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device, comprising: a substrate defining a horizontal plane; and a nanobar disposed on a graphene layer over the substrate, wherein the graphene layer defines a vertical plane perpendicular to the horizontal plane, and wherein the nanobar extends from the graphene layer and along a direction normal to the vertical plane. Original
The device of claim 1, further comprising: the substrate including a patterned insulating layer formed thereon; and a metal portion disposed within the patterned insulating layer, wherein the metal portion includes the graphene layer disposed along a lateral sidewall of the metal portion. Original
The device of claim 1, further comprising: a gate dielectric layer that surrounds the nanobar in a gate region of the nanobar; a gate metal layer that surrounds the gate dielectric layer; and a source/drain metal layer surrounding the nanobar in source/drain regions of the nanobar, wherein the source/drain regions are disposed adjacent to and on either side of the gate region. Original
The device of claim 1, wherein the nanobar includes at least one of an I nGaAs nanobar, an InAs nanobar, a GaAs nanobar, a core-shell nanobar, and a core-multishell nanobar. Original
A device, comprising: a substrate that defines a horizontal plane; a first graphene layer disposed over the substrate, wherein the first graphene layer defines a first vertical plane perpendicular to the horizontal plane; and a first nanobar formed on the first graphene layer, wherein the first nanobar extends in a first direction parallel to the horizontal plane and normal to the first vertical plane defined by the first graphene layer. Original
The device of claim 7, further comprising: the substrate including an insulating layer disposed thereon, wherein the insulating layer includes a recess having a first sidewall and a second sidewall opposite the first sidewall; and a first metal portion formed within the insulating layer, wherein a first lateral surface of the first metal portion is coplanar with the first sidewall of the recess; wherein the first graphene layer is disposed on the first lateral surface, and wherein the first vertical plane is parallel to the first lateral surface; and wherein the direction parallel to the horizontal plane and normal to the first vertical plane is independent of an orientation of the substrate. Original
A device, comprising: an insulating layer including a recess having a first sidewall, a second sidewall opposite the first sidewall, and a third sidewall interposing the first and second sidewalls, wherein the third sidewall is perpendicular to each of the first and second sidewalls, and wherein the third sidewall defines a horizontal plane; a cavity formed within the insulating layer and along the second sidewall of the recess; and a nanobar formed on a carbon-based layer within the recess, wherein the nanobar extends in a first direction parallel to the horizontal plane and normal to a vertical plane defined by the carbon-based layer, and wherein the nanobar extends into the cavity formed within the second sidewall of the recess. Currently amended
The device of claim 17, further comprising: a metal layer formed within the insulating layer, wherein the metal layer includes the carbon-based layer disposed on a first lateral surface of the metal layer, and wherein the carbon-based layer defines a vertical plane perpendicular to the horizontal plane and parallel to the first lateral surface; and wherein the cavity is disposed opposite the first lateral surface. Currently amended
The device of claim 17, wherein the cavity structurally supports an end portion of the
Layer stacks claimed or described, ordered top of device to substrate.
horizontal GAA device with single nanobar on graphene
gate-all-around (GAA) FET with surrounding gate
Materials described outside the worked examples.
graphene
nanobar
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–1000 nm | — |
Thickness |
Patent
Atlas literature
Patent
US 10,854,724Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A and 1 B are examples of a vertical and a horizontal GAA device, respectively. The device structures of FIGS. lA/1 B are only briefly described for the …
FIG. 2 0 B illustrates a view of a source/drain region of a GAA device taken along section B-B' of
FIGS. 3-19 illustrate cross sectional views of embodiments of a GAA device, where nanobar growth proceeds according to a one-sided nanobar growth process, and …
FIG. 4, and in an embodiment of block 206, a metal layer 402 is formed over the patterned first insulating layer 304, filling the at least one recess 306. In …
FIGS. 5 and 6, and in an embodiment of block 210, an insulating layer 604 may be formed over the insulating layer 304 and over the metal portion 402A. In some …
FIG. 6, one or more of the steps of the method 200 may be repeated so as to build up a structure (e.g., in a vertical direction, Z) including the plurality of …
FIG. 7, and in an embodiment of block 212, the first and second insulating layers 304/604 (e.g., the composite insulating layer 605) are patterned. In some …
FIGS. 8 and 9, and in an embodiment of block 216, a graphene layer 902 is formed on the surface 402B of the metal portion 402A. In addition, the graphene layer …
FIGS. 9 and 10, and in an embodiment of block 218, a nanobar 1002 is formed on the graphene layer 902, where growth of the nanobars proceeds in a direction N …
FIGS. 10 and 11, and in an embodiment of block 220, an insulating layer 1102 may be formed over the composite insulating layer 605 and over the nanobar 1002. …
FIGS. 11 and 12, and in an embodiment of block 222, the insulating layer 1102 is patterned. In some embodiments, photolithography and etching processes may be …
FIG. 12, a gate region is patterned within the insulating layer 3102. In various embodiments, the patterning of the insulating layer 3 102 may be substantially …
FIG. 13. In various embodiments, the dielectric layer 1302 may include a high-K dielectric layer, or in some cases may include a high-K layer formed over an …
FIG. 14, and in a further embodiment of block 224, after formation of the dielectric layer 1302, a gate metal layer 1402 is formed. In various embodiments, the …
FIGS. 15 and 16, and in an embodiment of block 228, the insulating layer 1102 is patterned. In some embodiments, photolithography and etching processes may be …
FIGS. 16 and 17, after patterning the source/drain regions and forming the recesses 1602, a source and drain metal layer 1702 may be formed. In various …
FIG. 17. In some embodiments, the source/drain metal layer 1702 may include a conductive layer such as Cr, Ti, Au, Ni, Pd, Ir, Ag, Pt, Cu, Co, Al, Fe, …
FIGS. 18 and 19, and in an embodiment of block 234, a dielectric layer 1902 is formed over the device 300. In some embodiments, the dielectric layer 1902 …
FIG. 19, in accordance with some embodiments; [0010]
FIG. 20A illustrates a view of a gate region of a GAA device taken along section A-A' of
FIGS. 21 and 22 illustrate a cross sectional and top-down view, respectively, of embodiments of a GAA device, including a plurality of nanobars formed …
FIG. 22 illustrates that one or more of the steps of the method 200 may be repeated so as to build up a structure in a horizontal direction Y (e.g., in …
FIGS. 23-39 illustrate cross sectional views of embodiments of a GAA device, where nanobar growth proceeds according to a two-sided nanobar growth process, and …
FIG. 24, and in at least some aspects similar to the example of
FIG. 25, and in an embodiment of block 208, a CMP process is performed, which may result in metal portions 2402A and 2402B formed within the recesses 2306, …
FIG. 26, in an embodiment of block 210 and in at least some aspects similar to the example of
FIGS. 27 and 28, an etching process (e.g., an isotropic etching process) of the composite insulating layer 2605 is performed which increases the depth and …
FIG. 29. In addition, the graphene layer 2902 may define a vertical plane parallel to the surface 240 2C, and the graphene layer 2904 may define a vertical plane …
FIG. 30) may have more mechanical strength and be more structurally stable than a nanobar formed using a one-sided nanobar growth process. [0056] Referring to …
FIG. 31. In various embodiments, formation of the insulating layer 3102 may be substantially the same as formation of the insulating layer 1102, discussed …
FIG. 32, in an embodiment of block 222 and in at least some aspects similar to the example of
FIGS. 33 and 34, in an embodiment of block 224 and in at least some aspects similar to the example of
FIG. 35, in an embodiment of block 226 and in at least some aspects similar to the example of
FIG. 36, in an embodiment of block 228 and in at least some aspects similar to the example of
FIG. 37, and in an embodiment of block 230, a source and drain metal layer 3702 may be formed. In various embodiments, formation of the source and drain metal …
FIG. 38, and in an embodiment of block 232, a CMP process is performed which removes excess portions of the source/drain metal layer 3702, while substantially …
FIG. 39, in an embodiment of block 234 and in at least some aspects similar to the example of
FIGS. 40 and 41 illustrate a cross sectional and top-down view, respectively, of embodiments of a GAA device, including a plurality of nanobars formed …
FIG. 41 illustrates that one or more of the steps of the method 200 may be repeated so as to build up a structure in a horizontal direction Y (e.g., in …
FIGS. 42A/42B provide a flow chart of a method of fabricating a GAA device, including a supporting cavity, according to one or more aspects of the present …
FIGS. 43-62 illustrate cross sectional views of embodiments of a GAA device, including a supporting cavity, and corresponding to one or more steps of the …
FIGS. 44 and 45. [0070] Thereafter, the method 4200 departs somewhat from the method 200, discussed above. In particular, the method 4200 proceeds to block …
FIG. 46. Next, and in embodiments of blocks 4212 and 4214 of the method 4200, a sacrificial layer 4702 is formed over the device 4300 and a CMP process is …
FIGS. 47 and 48. In some embodiments, the sacrificial layer 4702 includes silicon nitride. In various examples, the sacrificial layer 4702 includes a material …
FIG. 49. In some embodiments, the stacked insulating layers 4304/4902 may be substantially the same as the stacked insulating layers 304/604 described above …
FIG. 50. Patterning of the composite layer 4905 results in a recess 5002, having a depth D₂ and a width W2, within the composite insulating layer 4905, thereby …
FIG. 51. In addition, as shown in
FIG. 52. In various examples, the sacrificial layer 4702 may be removed by a wet etch, a dry etch, and/or a combination thereof. Moreover, in some embodiments, …
FIG. 53, and in accordance with processes as described above. In addition, the graphene layer 5302 may define a vertical plane parallel to the surface 4402B. …
FIG. 54, a nanobar 5402 is formed. In various embodiments, the nanobar 5402 is formed according to one or more of the methods previously discussed. In …
FIG. 55, a gate region is patterned within the insulating layer 5502. In various embodiments, the patterning of the insulating layer 5502 is done to form a …
FIGS. 56 and 57, in an embodiment of the following step of the method 4200 (block 4232), a gate dielectric layer 5602 is formed over the device 4300 (e.g., …
FIG. 58. [0077] Thereafter, with reference to
FIG. 59, in an embodiment of block 4236, source and drain regions are patterned within the insulating layer 5502. By way of example, the patterning of the …
FIG. 60. In an embodiment of block 4240, and with reference to
FIG. 61, a CMP process is performed which removes excess portions of the source/drain metal layer 6002, while substantially planarizing a top surface of the …
FIG. 62. In some embodiments, a CMP process may be performed after formation of the source/drain contacts 6202 and the gate contact 6204 to remove excess …
FIGS. 63 and 64 illustrate a cross sectional and top-down view, respectively, of embodiments of a GAA device, including a supporting cavity, and corresponding …
FIG. 64 illustrates that one or more of the steps of the method 4200 may be repeated so as to build up a structure in a horizontal direction Y (e.g., in …
FIG. 65 illustrates an embodiment of a geometrical configuration of a nanobar, according to some embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device, comprising: a substrate defining a horizontal plane; and a nanobar disposed on a graphene layer over the substrate, wherein the graphene layer defines a vertical plane perpendicular to the horizontal plane, and wherein the nanobar extends from the graphene layer and along a direction normal to the vertical plane. Original
The device of claim 1, further comprising: the substrate including a patterned insulating layer formed thereon; and a metal portion disposed within the patterned insulating layer, wherein the metal portion includes the graphene layer disposed along a lateral sidewall of the metal portion. Original
The device of claim 1, further comprising: a gate dielectric layer that surrounds the nanobar in a gate region of the nanobar; a gate metal layer that surrounds the gate dielectric layer; and a source/drain metal layer surrounding the nanobar in source/drain regions of the nanobar, wherein the source/drain regions are disposed adjacent to and on either side of the gate region. Original
The device of claim 1, wherein the nanobar includes at least one of an I nGaAs nanobar, an InAs nanobar, a GaAs nanobar, a core-shell nanobar, and a core-multishell nanobar. Original
A device, comprising: a substrate that defines a horizontal plane; a first graphene layer disposed over the substrate, wherein the first graphene layer defines a first vertical plane perpendicular to the horizontal plane; and a first nanobar formed on the first graphene layer, wherein the first nanobar extends in a first direction parallel to the horizontal plane and normal to the first vertical plane defined by the first graphene layer. Original
The device of claim 7, further comprising: the substrate including an insulating layer disposed thereon, wherein the insulating layer includes a recess having a first sidewall and a second sidewall opposite the first sidewall; and a first metal portion formed within the insulating layer, wherein a first lateral surface of the first metal portion is coplanar with the first sidewall of the recess; wherein the first graphene layer is disposed on the first lateral surface, and wherein the first vertical plane is parallel to the first lateral surface; and wherein the direction parallel to the horizontal plane and normal to the first vertical plane is independent of an orientation of the substrate. Original
A device, comprising: an insulating layer including a recess having a first sidewall, a second sidewall opposite the first sidewall, and a third sidewall interposing the first and second sidewalls, wherein the third sidewall is perpendicular to each of the first and second sidewalls, and wherein the third sidewall defines a horizontal plane; a cavity formed within the insulating layer and along the second sidewall of the recess; and a nanobar formed on a carbon-based layer within the recess, wherein the nanobar extends in a first direction parallel to the horizontal plane and normal to a vertical plane defined by the carbon-based layer, and wherein the nanobar extends into the cavity formed within the second sidewall of the recess. Currently amended
The device of claim 17, further comprising: a metal layer formed within the insulating layer, wherein the metal layer includes the carbon-based layer disposed on a first lateral surface of the metal layer, and wherein the carbon-based layer defines a vertical plane perpendicular to the horizontal plane and parallel to the first lateral surface; and wherein the cavity is disposed opposite the first lateral surface. Currently amended
The device of claim 17, wherein the cavity structurally supports an end portion of the
Layer stacks claimed or described, ordered top of device to substrate.
horizontal GAA device with single nanobar on graphene
gate-all-around (GAA) FET with surrounding gate
Materials described outside the worked examples.
graphene
nanobar
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–1000 nm | — |
Thickness |
dual-nanobar GAA device with opposing graphene layers and composite nanobar
array of nanobars on graphene layers within insulating layer
nanobar device with carbon-based layer and cavity support
metal portion
InGaAs
InAs
GaAs
metal portion materials
carbon-based layer
monolayer graphene
bilayer graphene
multi-layer graphene
| 1–100000 nm |
| — |
dual-nanobar GAA device with opposing graphene layers and composite nanobar
array of nanobars on graphene layers within insulating layer
nanobar device with carbon-based layer and cavity support
metal portion
InGaAs
InAs
GaAs
metal portion materials
carbon-based layer
monolayer graphene
bilayer graphene
multi-layer graphene
| 1–100000 nm |
| — |
dual-nanobar GAA device with opposing graphene layers and composite nanobar
array of nanobars on graphene layers within insulating layer
nanobar device with carbon-based layer and cavity support
metal portion
InGaAs
InAs
GaAs
metal portion materials
carbon-based layer
monolayer graphene
bilayer graphene
multi-layer graphene
| 1–100000 nm |
| — |
dual-nanobar GAA device with opposing graphene layers and composite nanobar
array of nanobars on graphene layers within insulating layer
nanobar device with carbon-based layer and cavity support
metal portion
InGaAs
InAs
GaAs
metal portion materials
carbon-based layer
monolayer graphene
bilayer graphene
multi-layer graphene
| 1–100000 nm |
| — |