Patent
US 8,177,911OF THE INVENTION
Akihiro Hachigo
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,177,911Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate on which a device is to be formed w herein: compou nd semico ndu cto r me m be r the gallium nitride substrate has a gallium nitride (GaN) bandgap, the gallium nitride substrate has a front surface, c o mp o und semionductor base made of a material with a banidgap of GaN and having a front face, whereinl the front surface has a surface damage such a level that, t material wth a adgap of GaN has properties that when a laser light having a wavelength shorter than a wavelength corresponding to the GaN bandgap is irradiated to the front f ae- of the mater ia l surface of the gallium nitride substrate, a photoluminescence emission [[(PL 1)]] PL l having a wavelength corresponding to the GaN bandgap and a photoluminescence emission [[(PL₂)]] PL₂ having a wavelength between 470nm to 640nm n ot less than 470 m are obtained, and an intensity of the photolumlnesene. em o (P i) PLl is not less than twice an intensity of the P 2 a thin film made of the front surface of the galliuim nitride compound se mico nductor s base.
The gallium nitride substrate c according to claim 26, wherein the gallium nitride substrate includes a base substrate on which 2 DM US 30808947- L 0502 12. 0764 Application No.: 11/907,322 the gallium nitride substrate is disposed compou n d seionductor m e mb e r is a g a llium nird
A gallium nitride compound semiconductor membrane formed on the gallium nitride compoundsemionductor me m be r substrate according to claim 26.
The gallium nitride compound semieendtor membe r substrate according to claim 26, wherein a wavelength of a pea k of the PL i exists near 365 nm.
(New) The gallium nitride substrate according to claim 26, wherein the damage is caused by a polishing or etching process.
A compound semiconductor substrate comprising: the gallium nitride substrate according to claim 26; and an epitaxial layer formed on the front surface of the gallium nitride substrate.
27.
30.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
gallium nitride compound semiconductor membrane on substrate
compound semiconductor substrate with epitaxial layer
Materials described outside the worked examples.
gallium nitride
GaN
epitaxial layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
PL1 peak wavelength (GaN bandgap emission) | — | GaN |
PL2 peak wavelength (defect/damage emission lower bound) | 470–640 |
Patent
Atlas literature
Patent
US 8,177,911Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate on which a device is to be formed w herein: compou nd semico ndu cto r me m be r the gallium nitride substrate has a gallium nitride (GaN) bandgap, the gallium nitride substrate has a front surface, c o mp o und semionductor base made of a material with a banidgap of GaN and having a front face, whereinl the front surface has a surface damage such a level that, t material wth a adgap of GaN has properties that when a laser light having a wavelength shorter than a wavelength corresponding to the GaN bandgap is irradiated to the front f ae- of the mater ia l surface of the gallium nitride substrate, a photoluminescence emission [[(PL 1)]] PL l having a wavelength corresponding to the GaN bandgap and a photoluminescence emission [[(PL₂)]] PL₂ having a wavelength between 470nm to 640nm n ot less than 470 m are obtained, and an intensity of the photolumlnesene. em o (P i) PLl is not less than twice an intensity of the P 2 a thin film made of the front surface of the galliuim nitride compound se mico nductor s base.
The gallium nitride substrate c according to claim 26, wherein the gallium nitride substrate includes a base substrate on which 2 DM US 30808947- L 0502 12. 0764 Application No.: 11/907,322 the gallium nitride substrate is disposed compou n d seionductor m e mb e r is a g a llium nird
A gallium nitride compound semiconductor membrane formed on the gallium nitride compoundsemionductor me m be r substrate according to claim 26.
The gallium nitride compound semieendtor membe r substrate according to claim 26, wherein a wavelength of a pea k of the PL i exists near 365 nm.
(New) The gallium nitride substrate according to claim 26, wherein the damage is caused by a polishing or etching process.
A compound semiconductor substrate comprising: the gallium nitride substrate according to claim 26; and an epitaxial layer formed on the front surface of the gallium nitride substrate.
27.
30.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
gallium nitride compound semiconductor membrane on substrate
compound semiconductor substrate with epitaxial layer
Materials described outside the worked examples.
gallium nitride
GaN
epitaxial layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
PL1 peak wavelength (GaN bandgap emission) | — | GaN |
PL2 peak wavelength (defect/damage emission lower bound) | 470–640 |
Patent
Atlas literature
Patent
US 8,177,911Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate on which a device is to be formed w herein: compou nd semico ndu cto r me m be r the gallium nitride substrate has a gallium nitride (GaN) bandgap, the gallium nitride substrate has a front surface, c o mp o und semionductor base made of a material with a banidgap of GaN and having a front face, whereinl the front surface has a surface damage such a level that, t material wth a adgap of GaN has properties that when a laser light having a wavelength shorter than a wavelength corresponding to the GaN bandgap is irradiated to the front f ae- of the mater ia l surface of the gallium nitride substrate, a photoluminescence emission [[(PL 1)]] PL l having a wavelength corresponding to the GaN bandgap and a photoluminescence emission [[(PL₂)]] PL₂ having a wavelength between 470nm to 640nm n ot less than 470 m are obtained, and an intensity of the photolumlnesene. em o (P i) PLl is not less than twice an intensity of the P 2 a thin film made of the front surface of the galliuim nitride compound se mico nductor s base.
The gallium nitride substrate c according to claim 26, wherein the gallium nitride substrate includes a base substrate on which 2 DM US 30808947- L 0502 12. 0764 Application No.: 11/907,322 the gallium nitride substrate is disposed compou n d seionductor m e mb e r is a g a llium nird
A gallium nitride compound semiconductor membrane formed on the gallium nitride compoundsemionductor me m be r substrate according to claim 26.
The gallium nitride compound semieendtor membe r substrate according to claim 26, wherein a wavelength of a pea k of the PL i exists near 365 nm.
(New) The gallium nitride substrate according to claim 26, wherein the damage is caused by a polishing or etching process.
A compound semiconductor substrate comprising: the gallium nitride substrate according to claim 26; and an epitaxial layer formed on the front surface of the gallium nitride substrate.
27.
30.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
gallium nitride compound semiconductor membrane on substrate
compound semiconductor substrate with epitaxial layer
Materials described outside the worked examples.
gallium nitride
GaN
epitaxial layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
PL1 peak wavelength (GaN bandgap emission) | — | GaN |
PL2 peak wavelength (defect/damage emission lower bound) | 470–640 |
Patent
Atlas literature
Patent
US 8,177,911Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride substrate on which a device is to be formed w herein: compou nd semico ndu cto r me m be r the gallium nitride substrate has a gallium nitride (GaN) bandgap, the gallium nitride substrate has a front surface, c o mp o und semionductor base made of a material with a banidgap of GaN and having a front face, whereinl the front surface has a surface damage such a level that, t material wth a adgap of GaN has properties that when a laser light having a wavelength shorter than a wavelength corresponding to the GaN bandgap is irradiated to the front f ae- of the mater ia l surface of the gallium nitride substrate, a photoluminescence emission [[(PL 1)]] PL l having a wavelength corresponding to the GaN bandgap and a photoluminescence emission [[(PL₂)]] PL₂ having a wavelength between 470nm to 640nm n ot less than 470 m are obtained, and an intensity of the photolumlnesene. em o (P i) PLl is not less than twice an intensity of the P 2 a thin film made of the front surface of the galliuim nitride compound se mico nductor s base.
The gallium nitride substrate c according to claim 26, wherein the gallium nitride substrate includes a base substrate on which 2 DM US 30808947- L 0502 12. 0764 Application No.: 11/907,322 the gallium nitride substrate is disposed compou n d seionductor m e mb e r is a g a llium nird
A gallium nitride compound semiconductor membrane formed on the gallium nitride compoundsemionductor me m be r substrate according to claim 26.
The gallium nitride compound semieendtor membe r substrate according to claim 26, wherein a wavelength of a pea k of the PL i exists near 365 nm.
(New) The gallium nitride substrate according to claim 26, wherein the damage is caused by a polishing or etching process.
A compound semiconductor substrate comprising: the gallium nitride substrate according to claim 26; and an epitaxial layer formed on the front surface of the gallium nitride substrate.
27.
30.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride substrate
gallium nitride compound semiconductor membrane on substrate
compound semiconductor substrate with epitaxial layer
Materials described outside the worked examples.
gallium nitride
GaN
epitaxial layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
PL1 peak wavelength (GaN bandgap emission) | — | GaN |
PL2 peak wavelength (defect/damage emission lower bound) | 470–640 |
compound semiconductor
nitride compound semiconductor containing at least one of B, Al, Ga
oxide compound semiconductor containing at least one of Be and Zn
ZnSe compound semiconductor
ZnSe
PL1 intensity ratio relative to PL2: PL1 >= 2x PL2 | ≥ 2 | GaN |
Thickness | 470–640 nm | — |
compound semiconductor
nitride compound semiconductor containing at least one of B, Al, Ga
oxide compound semiconductor containing at least one of Be and Zn
ZnSe compound semiconductor
ZnSe
PL1 intensity ratio relative to PL2: PL1 >= 2x PL2 | ≥ 2 | GaN |
Thickness | 470–640 nm | — |
compound semiconductor
nitride compound semiconductor containing at least one of B, Al, Ga
oxide compound semiconductor containing at least one of Be and Zn
ZnSe compound semiconductor
ZnSe
PL1 intensity ratio relative to PL2: PL1 >= 2x PL2 | ≥ 2 | GaN |
Thickness | 470–640 nm | — |
compound semiconductor
nitride compound semiconductor containing at least one of B, Al, Ga
oxide compound semiconductor containing at least one of Be and Zn
ZnSe compound semiconductor
ZnSe
PL1 intensity ratio relative to PL2: PL1 >= 2x PL2 | ≥ 2 | GaN |
Thickness | 470–640 nm | — |