Patent
US 8,808,810OF THE INVENTION
Vijayen S. Veerasamy
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,808,810Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
(Orig in al) The method of claim 1, where in the c-axis of precursor molecule is substantially perpendicular to substrate p n or to and/or follow in g the photochemical attach ing
(Orig in al) The method of claim 1, where in the photochemical attach ing inc ludes irradiat in g UV energy towards the substrate
(Orig in al) The method of claim 12, where in the wavelength of the UV energy is between 320-380 n m
(Orig in al) The method of claim 1, where in said heat in g is performed in a vacuum 15-16
canceled
canceled
A method of mak in g a coated article, the method comp nsing provid in g a substrate hav in g a surface to be coated, -3- 2302020 VEERASAMY App l No 12/654,269 dispos in g a self-assembled monolayer (SAM) template on the surface to be coated, apply in g a solution to the substrate hav in g the SAM template disposed thereon, the solution comp nsin g a precursor inc lud in g a precursor molecule, the precursor molecule be in g a polycyc lic aromatic hydrocarbon (PAH) molecule, attach in g the precursor molecule to the SAM template by i rradiat in g UV energy thereon, and heat in g the substrate us in g at least first and second temperature ramp rates, in that order, to form a graphene- in clusive film, the first and second temperature ramp rates be in g different from one another, where in the SAM template and/or the precursor molecule comprise(s) one or more alkyl groups to help ensure that the c-axis of precursor molecule is substantially perpendicular to the substrate prior to and/or follow in g the photochemical attach ingan
(Orig in al) The method of claim 17, further compris in g provid in g a layer comp nsin g s ili con oxide on the surface to be coated prior to the dispos in g of the SAM template
(Orig in al) The method of claim 17, where in the SAM template is a silane- benzophenone de n vative
(Orig in al) The method of claim 17, where in the precursor molecule is C₉₆ and/or HBC
(Orig in al) The method of claim 17, where in said heat in g is performed in a vacuum
(Orig in al) The method of claim 17, where in said heat in g is performed in an environment compris ing in ert gas -4- 2302020 VEERASAMY App l No 12/654,269
A method of mak in g an electro nic device, the method comp nsing dispos in g a self-assembled monolayer (SAM) template on a surface of a substrate to be coated, apply in g a solution to the surface of the substrate hav in g the SAM template disposed thereon, the solution inc lud in g precursor molecules that are a polycyc lic aromatic hydrocarbon (PAH) and discotic molecules, the precursor molecules in clud in g C₉₆ and/or HBC, photochemically attach in g the precursor molecules to the SAM template, heat in g the substrate in an argon and acetylene gas in clusive environment evacuated to a pressure less than atmosphe n c to at least 450 degrees C to i ni tially form a substantially planar graphene-based film on the substrate and then repair the ini tially formed substantially planar SVG 12654269.02-12-2014.HRL₄KLQ₂PXXIFW3.CLM12897010.15.262.1248.1793.1334.svg 0.287 5.103 Graph Black and white build in g the substrate with the graphene-based film in to the electro nic device
A method of mak in g an electro nic device, the method comp nsing provid in g a substrate hav in g a surface to be coated, dispos in g a self-assembled monolayer (SAM) template on the surface to be coated, apply in g a solution to the substrate hav in g the SAM template disposed thereon, the solution comp nsin g a precursor inc lud in g a precursor molecule and be in g colu mn- chromatography purified, the precursor molecule be in g a polycyc lic aromatic hydrocarbon (PAH) molecule, attach in g the precursor molecule to the SAM template by i rradiat in g UV energy thereon, heat in g the substrate to at least 450 degrees C to form a graphene- m clusive film, where in the heat in g is performed at a first ramp rate until a temperature of j ust over 400 degrees C is reached, and then the heat in g is performed at a second ramp rate that is higher than the first ramp rate, and build in g the substrate with the graphene- in clusive film in to the electro nic device, where in the SAM template and/or the precursor molecule comprise(s) one or more alkyl groups to help ensure that the c-axis of precursor molecule is substantially perpendicular to the substrate prior to and/or follow in g the photochemical attach ing -5- 2302020 VEERASAMY App l No 12/654,269 previously presented
The method of claim 24, where in the heat in g is performed at the second ramp rate until a temperature of no more than 800 degrees C i s reached
The method of claim 24, where in the first ramp rate ramps from room temperature to the temperature of j ust over 400 degrees C and the second ramp rate ramps from the temperature of j ust over 400 degrees C to as high as about 800 degrees C, the second ramp rate be in g greater than the first ramp rate -6- 2302020
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
coated article with graphene-inclusive film
electronic device with graphene-based film
Materials described outside the worked examples.
polycyclic aromatic hydrocarbon (PAH) precursor molecule
self-assembled monolayer (SAM) template
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1300–1400 cm | — |
Pressure |
Patent
Atlas literature
Patent
US 8,808,810Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
(Orig in al) The method of claim 1, where in the c-axis of precursor molecule is substantially perpendicular to substrate p n or to and/or follow in g the photochemical attach ing
(Orig in al) The method of claim 1, where in the photochemical attach ing inc ludes irradiat in g UV energy towards the substrate
(Orig in al) The method of claim 12, where in the wavelength of the UV energy is between 320-380 n m
(Orig in al) The method of claim 1, where in said heat in g is performed in a vacuum 15-16
canceled
canceled
A method of mak in g a coated article, the method comp nsing provid in g a substrate hav in g a surface to be coated, -3- 2302020 VEERASAMY App l No 12/654,269 dispos in g a self-assembled monolayer (SAM) template on the surface to be coated, apply in g a solution to the substrate hav in g the SAM template disposed thereon, the solution comp nsin g a precursor inc lud in g a precursor molecule, the precursor molecule be in g a polycyc lic aromatic hydrocarbon (PAH) molecule, attach in g the precursor molecule to the SAM template by i rradiat in g UV energy thereon, and heat in g the substrate us in g at least first and second temperature ramp rates, in that order, to form a graphene- in clusive film, the first and second temperature ramp rates be in g different from one another, where in the SAM template and/or the precursor molecule comprise(s) one or more alkyl groups to help ensure that the c-axis of precursor molecule is substantially perpendicular to the substrate prior to and/or follow in g the photochemical attach ingan
(Orig in al) The method of claim 17, further compris in g provid in g a layer comp nsin g s ili con oxide on the surface to be coated prior to the dispos in g of the SAM template
(Orig in al) The method of claim 17, where in the SAM template is a silane- benzophenone de n vative
(Orig in al) The method of claim 17, where in the precursor molecule is C₉₆ and/or HBC
(Orig in al) The method of claim 17, where in said heat in g is performed in a vacuum
(Orig in al) The method of claim 17, where in said heat in g is performed in an environment compris ing in ert gas -4- 2302020 VEERASAMY App l No 12/654,269
A method of mak in g an electro nic device, the method comp nsing dispos in g a self-assembled monolayer (SAM) template on a surface of a substrate to be coated, apply in g a solution to the surface of the substrate hav in g the SAM template disposed thereon, the solution inc lud in g precursor molecules that are a polycyc lic aromatic hydrocarbon (PAH) and discotic molecules, the precursor molecules in clud in g C₉₆ and/or HBC, photochemically attach in g the precursor molecules to the SAM template, heat in g the substrate in an argon and acetylene gas in clusive environment evacuated to a pressure less than atmosphe n c to at least 450 degrees C to i ni tially form a substantially planar graphene-based film on the substrate and then repair the ini tially formed substantially planar SVG 12654269.02-12-2014.HRL₄KLQ₂PXXIFW3.CLM12897010.15.262.1248.1793.1334.svg 0.287 5.103 Graph Black and white build in g the substrate with the graphene-based film in to the electro nic device
A method of mak in g an electro nic device, the method comp nsing provid in g a substrate hav in g a surface to be coated, dispos in g a self-assembled monolayer (SAM) template on the surface to be coated, apply in g a solution to the substrate hav in g the SAM template disposed thereon, the solution comp nsin g a precursor inc lud in g a precursor molecule and be in g colu mn- chromatography purified, the precursor molecule be in g a polycyc lic aromatic hydrocarbon (PAH) molecule, attach in g the precursor molecule to the SAM template by i rradiat in g UV energy thereon, heat in g the substrate to at least 450 degrees C to form a graphene- m clusive film, where in the heat in g is performed at a first ramp rate until a temperature of j ust over 400 degrees C is reached, and then the heat in g is performed at a second ramp rate that is higher than the first ramp rate, and build in g the substrate with the graphene- in clusive film in to the electro nic device, where in the SAM template and/or the precursor molecule comprise(s) one or more alkyl groups to help ensure that the c-axis of precursor molecule is substantially perpendicular to the substrate prior to and/or follow in g the photochemical attach ing -5- 2302020 VEERASAMY App l No 12/654,269 previously presented
The method of claim 24, where in the heat in g is performed at the second ramp rate until a temperature of no more than 800 degrees C i s reached
The method of claim 24, where in the first ramp rate ramps from room temperature to the temperature of j ust over 400 degrees C and the second ramp rate ramps from the temperature of j ust over 400 degrees C to as high as about 800 degrees C, the second ramp rate be in g greater than the first ramp rate -6- 2302020
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
coated article with graphene-inclusive film
electronic device with graphene-based film
Materials described outside the worked examples.
polycyclic aromatic hydrocarbon (PAH) precursor molecule
self-assembled monolayer (SAM) template
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1300–1400 cm | — |
Pressure |
Patent
Atlas literature
Patent
US 8,808,810Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
(Orig in al) The method of claim 1, where in the c-axis of precursor molecule is substantially perpendicular to substrate p n or to and/or follow in g the photochemical attach ing
(Orig in al) The method of claim 1, where in the photochemical attach ing inc ludes irradiat in g UV energy towards the substrate
(Orig in al) The method of claim 12, where in the wavelength of the UV energy is between 320-380 n m
(Orig in al) The method of claim 1, where in said heat in g is performed in a vacuum 15-16
canceled
canceled
A method of mak in g a coated article, the method comp nsing provid in g a substrate hav in g a surface to be coated, -3- 2302020 VEERASAMY App l No 12/654,269 dispos in g a self-assembled monolayer (SAM) template on the surface to be coated, apply in g a solution to the substrate hav in g the SAM template disposed thereon, the solution comp nsin g a precursor inc lud in g a precursor molecule, the precursor molecule be in g a polycyc lic aromatic hydrocarbon (PAH) molecule, attach in g the precursor molecule to the SAM template by i rradiat in g UV energy thereon, and heat in g the substrate us in g at least first and second temperature ramp rates, in that order, to form a graphene- in clusive film, the first and second temperature ramp rates be in g different from one another, where in the SAM template and/or the precursor molecule comprise(s) one or more alkyl groups to help ensure that the c-axis of precursor molecule is substantially perpendicular to the substrate prior to and/or follow in g the photochemical attach ingan
(Orig in al) The method of claim 17, further compris in g provid in g a layer comp nsin g s ili con oxide on the surface to be coated prior to the dispos in g of the SAM template
(Orig in al) The method of claim 17, where in the SAM template is a silane- benzophenone de n vative
(Orig in al) The method of claim 17, where in the precursor molecule is C₉₆ and/or HBC
(Orig in al) The method of claim 17, where in said heat in g is performed in a vacuum
(Orig in al) The method of claim 17, where in said heat in g is performed in an environment compris ing in ert gas -4- 2302020 VEERASAMY App l No 12/654,269
A method of mak in g an electro nic device, the method comp nsing dispos in g a self-assembled monolayer (SAM) template on a surface of a substrate to be coated, apply in g a solution to the surface of the substrate hav in g the SAM template disposed thereon, the solution inc lud in g precursor molecules that are a polycyc lic aromatic hydrocarbon (PAH) and discotic molecules, the precursor molecules in clud in g C₉₆ and/or HBC, photochemically attach in g the precursor molecules to the SAM template, heat in g the substrate in an argon and acetylene gas in clusive environment evacuated to a pressure less than atmosphe n c to at least 450 degrees C to i ni tially form a substantially planar graphene-based film on the substrate and then repair the ini tially formed substantially planar SVG 12654269.02-12-2014.HRL₄KLQ₂PXXIFW3.CLM12897010.15.262.1248.1793.1334.svg 0.287 5.103 Graph Black and white build in g the substrate with the graphene-based film in to the electro nic device
A method of mak in g an electro nic device, the method comp nsing provid in g a substrate hav in g a surface to be coated, dispos in g a self-assembled monolayer (SAM) template on the surface to be coated, apply in g a solution to the substrate hav in g the SAM template disposed thereon, the solution comp nsin g a precursor inc lud in g a precursor molecule and be in g colu mn- chromatography purified, the precursor molecule be in g a polycyc lic aromatic hydrocarbon (PAH) molecule, attach in g the precursor molecule to the SAM template by i rradiat in g UV energy thereon, heat in g the substrate to at least 450 degrees C to form a graphene- m clusive film, where in the heat in g is performed at a first ramp rate until a temperature of j ust over 400 degrees C is reached, and then the heat in g is performed at a second ramp rate that is higher than the first ramp rate, and build in g the substrate with the graphene- in clusive film in to the electro nic device, where in the SAM template and/or the precursor molecule comprise(s) one or more alkyl groups to help ensure that the c-axis of precursor molecule is substantially perpendicular to the substrate prior to and/or follow in g the photochemical attach ing -5- 2302020 VEERASAMY App l No 12/654,269 previously presented
The method of claim 24, where in the heat in g is performed at the second ramp rate until a temperature of no more than 800 degrees C i s reached
The method of claim 24, where in the first ramp rate ramps from room temperature to the temperature of j ust over 400 degrees C and the second ramp rate ramps from the temperature of j ust over 400 degrees C to as high as about 800 degrees C, the second ramp rate be in g greater than the first ramp rate -6- 2302020
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
coated article with graphene-inclusive film
electronic device with graphene-based film
Materials described outside the worked examples.
polycyclic aromatic hydrocarbon (PAH) precursor molecule
self-assembled monolayer (SAM) template
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1300–1400 cm | — |
Pressure |
Patent
Atlas literature
Patent
US 8,808,810Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
(Orig in al) The method of claim 1, where in the c-axis of precursor molecule is substantially perpendicular to substrate p n or to and/or follow in g the photochemical attach ing
(Orig in al) The method of claim 1, where in the photochemical attach ing inc ludes irradiat in g UV energy towards the substrate
(Orig in al) The method of claim 12, where in the wavelength of the UV energy is between 320-380 n m
(Orig in al) The method of claim 1, where in said heat in g is performed in a vacuum 15-16
canceled
canceled
A method of mak in g a coated article, the method comp nsing provid in g a substrate hav in g a surface to be coated, -3- 2302020 VEERASAMY App l No 12/654,269 dispos in g a self-assembled monolayer (SAM) template on the surface to be coated, apply in g a solution to the substrate hav in g the SAM template disposed thereon, the solution comp nsin g a precursor inc lud in g a precursor molecule, the precursor molecule be in g a polycyc lic aromatic hydrocarbon (PAH) molecule, attach in g the precursor molecule to the SAM template by i rradiat in g UV energy thereon, and heat in g the substrate us in g at least first and second temperature ramp rates, in that order, to form a graphene- in clusive film, the first and second temperature ramp rates be in g different from one another, where in the SAM template and/or the precursor molecule comprise(s) one or more alkyl groups to help ensure that the c-axis of precursor molecule is substantially perpendicular to the substrate prior to and/or follow in g the photochemical attach ingan
(Orig in al) The method of claim 17, further compris in g provid in g a layer comp nsin g s ili con oxide on the surface to be coated prior to the dispos in g of the SAM template
(Orig in al) The method of claim 17, where in the SAM template is a silane- benzophenone de n vative
(Orig in al) The method of claim 17, where in the precursor molecule is C₉₆ and/or HBC
(Orig in al) The method of claim 17, where in said heat in g is performed in a vacuum
(Orig in al) The method of claim 17, where in said heat in g is performed in an environment compris ing in ert gas -4- 2302020 VEERASAMY App l No 12/654,269
A method of mak in g an electro nic device, the method comp nsing dispos in g a self-assembled monolayer (SAM) template on a surface of a substrate to be coated, apply in g a solution to the surface of the substrate hav in g the SAM template disposed thereon, the solution inc lud in g precursor molecules that are a polycyc lic aromatic hydrocarbon (PAH) and discotic molecules, the precursor molecules in clud in g C₉₆ and/or HBC, photochemically attach in g the precursor molecules to the SAM template, heat in g the substrate in an argon and acetylene gas in clusive environment evacuated to a pressure less than atmosphe n c to at least 450 degrees C to i ni tially form a substantially planar graphene-based film on the substrate and then repair the ini tially formed substantially planar SVG 12654269.02-12-2014.HRL₄KLQ₂PXXIFW3.CLM12897010.15.262.1248.1793.1334.svg 0.287 5.103 Graph Black and white build in g the substrate with the graphene-based film in to the electro nic device
A method of mak in g an electro nic device, the method comp nsing provid in g a substrate hav in g a surface to be coated, dispos in g a self-assembled monolayer (SAM) template on the surface to be coated, apply in g a solution to the substrate hav in g the SAM template disposed thereon, the solution comp nsin g a precursor inc lud in g a precursor molecule and be in g colu mn- chromatography purified, the precursor molecule be in g a polycyc lic aromatic hydrocarbon (PAH) molecule, attach in g the precursor molecule to the SAM template by i rradiat in g UV energy thereon, heat in g the substrate to at least 450 degrees C to form a graphene- m clusive film, where in the heat in g is performed at a first ramp rate until a temperature of j ust over 400 degrees C is reached, and then the heat in g is performed at a second ramp rate that is higher than the first ramp rate, and build in g the substrate with the graphene- in clusive film in to the electro nic device, where in the SAM template and/or the precursor molecule comprise(s) one or more alkyl groups to help ensure that the c-axis of precursor molecule is substantially perpendicular to the substrate prior to and/or follow in g the photochemical attach ing -5- 2302020 VEERASAMY App l No 12/654,269 previously presented
The method of claim 24, where in the heat in g is performed at the second ramp rate until a temperature of no more than 800 degrees C i s reached
The method of claim 24, where in the first ramp rate ramps from room temperature to the temperature of j ust over 400 degrees C and the second ramp rate ramps from the temperature of j ust over 400 degrees C to as high as about 800 degrees C, the second ramp rate be in g greater than the first ramp rate -6- 2302020
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
coated article with graphene-inclusive film
electronic device with graphene-based film
Materials described outside the worked examples.
polycyclic aromatic hydrocarbon (PAH) precursor molecule
self-assembled monolayer (SAM) template
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1300–1400 cm | — |
Pressure |
substrate
graphene-inclusive film
silicon oxide
SiOx
silane-benzophenone derivative SAM
C₉₆
HBC (hexa-peri-hexabenzocoronene)
argon (inert gas)
Ar
acetylene gas
C₂H₂
graphene transparent conductive coating (TCC)
indium tin oxide (ITO)
fluorine-doped tin oxide (FTO, SnO2:F)
SnO2:F
| — |
Pressure | 10–100 mTorr | — |
— | 10–200 ev | — |
— | 20–50 ev | — |
— | 20–40 ev | — |
— | 10–1000 ev | — |
— | 20–500 ev | — |
— | 20–100 ev | — |
Thickness | 340–360 nm | — |
Duration | 15–20 hours | — |
Thickness | ≥ 10 nm | — |
substrate
graphene-inclusive film
silicon oxide
SiOx
silane-benzophenone derivative SAM
C₉₆
HBC (hexa-peri-hexabenzocoronene)
argon (inert gas)
Ar
acetylene gas
C₂H₂
graphene transparent conductive coating (TCC)
indium tin oxide (ITO)
fluorine-doped tin oxide (FTO, SnO2:F)
SnO2:F
| — |
Pressure | 10–100 mTorr | — |
— | 10–200 ev | — |
— | 20–50 ev | — |
— | 20–40 ev | — |
— | 10–1000 ev | — |
— | 20–500 ev | — |
— | 20–100 ev | — |
Thickness | 340–360 nm | — |
Duration | 15–20 hours | — |
Thickness | ≥ 10 nm | — |
substrate
graphene-inclusive film
silicon oxide
SiOx
silane-benzophenone derivative SAM
C₉₆
HBC (hexa-peri-hexabenzocoronene)
argon (inert gas)
Ar
acetylene gas
C₂H₂
graphene transparent conductive coating (TCC)
indium tin oxide (ITO)
fluorine-doped tin oxide (FTO, SnO2:F)
SnO2:F
| — |
Pressure | 10–100 mTorr | — |
— | 10–200 ev | — |
— | 20–50 ev | — |
— | 20–40 ev | — |
— | 10–1000 ev | — |
— | 20–500 ev | — |
— | 20–100 ev | — |
Thickness | 340–360 nm | — |
Duration | 15–20 hours | — |
Thickness | ≥ 10 nm | — |
substrate
graphene-inclusive film
silicon oxide
SiOx
silane-benzophenone derivative SAM
C₉₆
HBC (hexa-peri-hexabenzocoronene)
argon (inert gas)
Ar
acetylene gas
C₂H₂
graphene transparent conductive coating (TCC)
indium tin oxide (ITO)
fluorine-doped tin oxide (FTO, SnO2:F)
SnO2:F
| — |
Pressure | 10–100 mTorr | — |
— | 10–200 ev | — |
— | 20–50 ev | — |
— | 20–40 ev | — |
— | 10–1000 ev | — |
— | 20–500 ev | — |
— | 20–100 ev | — |
Thickness | 340–360 nm | — |
Duration | 15–20 hours | — |
Thickness | ≥ 10 nm | — |