NITROGEN OXIDE GAS SENSOR BASED ON SULFUR DOPED GRAPHENE AND PREPARATION METHOD THEREFOR | Matter42 Literature
Patent
Atlas literature
Patent
US 10,908,107
NITROGEN OXIDE GAS SENSOR BASED ON SULFUR DOPED GRAPHENE AND PREPARATION METHOD THEREFOR
TIE LI
US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 illustrates a flowchart of a preparation method for nitrogen oxide gas sensor based on sulfur-doped graphene provided by the present invention.
FIG. 2
FIG. 2a. b) The intrinsic graphene 21 is transferred onto a micro heater platform substrate 23 by using a direct transfer method. In this embodiment, the micro …
FIG. 3
FIG. 3e. Speci fi cally, fi rstly, PMMA 27 is uniformly coated onto the surface of the intrinsic 1 graphene 21, and the micro heater platform substrate 23 is …
FIG. 4
FIG. 4. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the 1 …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
7 independent · 13 dependent
1
Independentgraphenesulfur-doped graphene
A preparation method for nitrogen oxide gas sensor based on sulfur-doped graphene, characterized in that the method comprises the following steps: 1) providing graphene and a micro heater platform substrate, and transferring the graphene onto the micro heater platform substrate; 2) putting the micro heater platform substrate covered with the graphene into a chemical vapor deposition reaction furnace; 3) performing gas feeding and exhausting treatment to the reaction furnace by using inert gas; 4) simultaneously feeding inert gas and hydrogen gas into the reaction furnace at a first temperature; 5) feeding inert gas, hydrogen gas and sulfur source gas into the reaction furnace at a second temperature for reaction to perform sulfur doping to the graphene; and 6) stopping feeding the sulfur source gas, and performing cooling to the reaction furnace in a hydrogen gas and insert gas shielding atmosphere. Withdrawn
2
Dependent← claim 1intrinsic graphene
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 1), the graphene is intrinsic graphene. Withdrawn
3
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 1), the micro heater platform substrate is a single micro heater platform or a wafer level substrate. Withdrawn
4
Dependent← claim 1graphene
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 1), a test electrode and a heater are provided on the micro heater platform substrate, and the graphene at least covers the test electrode. Withdrawn
5
Dependent← claim 1graphene
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 1), the graphene is transferred onto the micro heater platform substrate by adopting a direct transfer method or PMMA method. Withdrawn
6
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 3), the flow rate of the inert gas is 5 00s c cm-5000sc cm, and the gas feeding and exhausting treatment time is 2min-3 0 min. Withdrawn
7
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 4), the first temperature is 200 ° C-700 ° C; the flow rate of mixed gas of the hydrogen gas and the inert gas is 100sc cm- 5000sc cm; and the mixing ratio of the hydrogen gas to the inert gas is 10 %-90%. Withdrawn
8
Dependent← claim 1sulfur source gas
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 5), the second temperature is 300 ° C-900 ° C; the flow rate of the inert gas is 5 00s c cm- 5000sc cm, the flow rate of the hydrogen gas is 10sc cm- 1 00sc c m and the flow rate of the sulfur source gas is 0. 5sc cm- 50sc cm; and the doping time is 10 min- 50 min. Withdrawn
9
Dependent← claim 1H₂SCOS
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that the sulfur source gas comprises one or more of hydrogen sulfide and carbonyl sulfide. Withdrawn
10
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 5), temperature is increased from the first temperature to the second temperature, the temperature is kept at the second temperature for min-20min, and then the sulfur source gas is fed into the reaction furnace. Withdrawn
11
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 6), the flow rate of the inert gas is 50sc cm-300s c cm, and the flow rate of the hydrogen gas is 10sc cm-40s c cm. Withdrawn
12
Independentsulfur-doped graphenenitrogen oxide gas sensor (two-surface configuration)
A nitrogen oxide gas sensor based on sulfur-doped graphene-comprising: a micro heater platform substrate with a first surface and a second surface; a test electrode located on the first surface of the micro heater platform substrate a heater located on the second surface of the micro heater platform substrate; and a sulfur-doped graphene located on the first surface of the micro heater platform substrate covering the test electrode and the first surface of the micro heater platform substrate.. Currently amended
13
Independent
Canceled
14
Independentnitrogen oxide gas sensor (single micro heater platform, one pair of electrodes)
The nitrogen oxide gas sensor based on sulfur-doped graphene according to claim 1244, wherein the micro heater platform substrate is a single micro heater platform, the number of the test electrode is one pair, the number of the heater is one, and the pair of test electrode is disposed above the heater.. Currently amended
15
Independentnitrogen oxide gas sensor (wafer level, array configuration, two-surface)
The nitrogen oxide gas sensor based on sulfur-doped graphene according to claim 1244, wherein the micro heater platform substrate is a wafer level substrate s, a plurality of test electrodes and a plurality of heaters are respectively distributed in an array on the first surface and the second surface, and the plurality o f test electrodes correspond to the plurality of heaters one to one in location. Currently amended
A nitrogen oxide gas sensor based on sulfur-doped graphene comprising: a micro heater platform substrate with a first surface and a second surface; a heater located on the first surface of the micro heater platform substrate; an insulating layer located on the heater; a test electrode located on the insulating layer; a sulfur-doped graphene located on the first surface of the micro heater platform substrate covering the test electrode and the first surface of the micro heater platform substrate. New
19
Dependent← claim 18nitrogen oxide gas sensor (single-surface single micro heater, one pair of electrodes)
The nitrogen oxide gas sensor based on sulfur-doped graphene according to claim 18, wherein the micro heater platform substrate is a single micro heater platform, the number of the test electrode is one pair, the number of the heater is one, and the pair of test electrode is disposed above the heater. New
20
Dependent← claim 18nitrogen oxide gas sensor (single-surface wafer level array)
The nitrogen oxide gas sensor based on the micro heater platform substrate is a wafer level plurality of heaters are respectively distributed in platform substrate, and the plurality of test electrodes one in location. New sulfur-doped graphene according to claim 18, wherein substrate, a plurality of test electrodes and a an array on the first surface of the micro heater correspond to the plurality of heaters one to
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
nitrogen oxide gas sensor (two-surface configuration)
sulfur-doped graphenesensing layer
heaterheater
testelectrodetest electrode
substratesubstrate
nitrogen oxide gas sensor (single micro heater platform, one pair of electrodes)
sulfur-doped graphenesensing layer
Materials
Materials described outside the worked examples.
graphene
Sensing Material Precursor
sulfur-doped graphene
Gas Sensing Material
Process steps
Additional fabrication and treatment steps described in the patent.
1
Cvd Doping
Step 1
Ambient
inert gas/H2/sulfur source gas
Process details
step1:
Patent
Atlas literature
Patent
US 10,908,107
NITROGEN OXIDE GAS SENSOR BASED ON SULFUR DOPED GRAPHENE AND PREPARATION METHOD THEREFOR
TIE LI
US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 illustrates a flowchart of a preparation method for nitrogen oxide gas sensor based on sulfur-doped graphene provided by the present invention.
FIG. 2
FIG. 2a. b) The intrinsic graphene 21 is transferred onto a micro heater platform substrate 23 by using a direct transfer method. In this embodiment, the micro …
FIG. 3
FIG. 3e. Speci fi cally, fi rstly, PMMA 27 is uniformly coated onto the surface of the intrinsic 1 graphene 21, and the micro heater platform substrate 23 is …
FIG. 4
FIG. 4. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the 1 …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
7 independent · 13 dependent
1
Independentgraphenesulfur-doped graphene
A preparation method for nitrogen oxide gas sensor based on sulfur-doped graphene, characterized in that the method comprises the following steps: 1) providing graphene and a micro heater platform substrate, and transferring the graphene onto the micro heater platform substrate; 2) putting the micro heater platform substrate covered with the graphene into a chemical vapor deposition reaction furnace; 3) performing gas feeding and exhausting treatment to the reaction furnace by using inert gas; 4) simultaneously feeding inert gas and hydrogen gas into the reaction furnace at a first temperature; 5) feeding inert gas, hydrogen gas and sulfur source gas into the reaction furnace at a second temperature for reaction to perform sulfur doping to the graphene; and 6) stopping feeding the sulfur source gas, and performing cooling to the reaction furnace in a hydrogen gas and insert gas shielding atmosphere. Withdrawn
2
Dependent← claim 1intrinsic graphene
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 1), the graphene is intrinsic graphene. Withdrawn
3
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 1), the micro heater platform substrate is a single micro heater platform or a wafer level substrate. Withdrawn
4
Dependent← claim 1graphene
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 1), a test electrode and a heater are provided on the micro heater platform substrate, and the graphene at least covers the test electrode. Withdrawn
5
Dependent← claim 1graphene
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 1), the graphene is transferred onto the micro heater platform substrate by adopting a direct transfer method or PMMA method. Withdrawn
6
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 3), the flow rate of the inert gas is 5 00s c cm-5000sc cm, and the gas feeding and exhausting treatment time is 2min-3 0 min. Withdrawn
7
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 4), the first temperature is 200 ° C-700 ° C; the flow rate of mixed gas of the hydrogen gas and the inert gas is 100sc cm- 5000sc cm; and the mixing ratio of the hydrogen gas to the inert gas is 10 %-90%. Withdrawn
8
Dependent← claim 1sulfur source gas
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 5), the second temperature is 300 ° C-900 ° C; the flow rate of the inert gas is 5 00s c cm- 5000sc cm, the flow rate of the hydrogen gas is 10sc cm- 1 00sc c m and the flow rate of the sulfur source gas is 0. 5sc cm- 50sc cm; and the doping time is 10 min- 50 min. Withdrawn
9
Dependent← claim 1H₂SCOS
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that the sulfur source gas comprises one or more of hydrogen sulfide and carbonyl sulfide. Withdrawn
10
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 5), temperature is increased from the first temperature to the second temperature, the temperature is kept at the second temperature for min-20min, and then the sulfur source gas is fed into the reaction furnace. Withdrawn
11
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 6), the flow rate of the inert gas is 50sc cm-300s c cm, and the flow rate of the hydrogen gas is 10sc cm-40s c cm. Withdrawn
12
Independentsulfur-doped graphenenitrogen oxide gas sensor (two-surface configuration)
A nitrogen oxide gas sensor based on sulfur-doped graphene-comprising: a micro heater platform substrate with a first surface and a second surface; a test electrode located on the first surface of the micro heater platform substrate a heater located on the second surface of the micro heater platform substrate; and a sulfur-doped graphene located on the first surface of the micro heater platform substrate covering the test electrode and the first surface of the micro heater platform substrate.. Currently amended
13
Independent
Canceled
14
Independentnitrogen oxide gas sensor (single micro heater platform, one pair of electrodes)
The nitrogen oxide gas sensor based on sulfur-doped graphene according to claim 1244, wherein the micro heater platform substrate is a single micro heater platform, the number of the test electrode is one pair, the number of the heater is one, and the pair of test electrode is disposed above the heater.. Currently amended
15
Independentnitrogen oxide gas sensor (wafer level, array configuration, two-surface)
The nitrogen oxide gas sensor based on sulfur-doped graphene according to claim 1244, wherein the micro heater platform substrate is a wafer level substrate s, a plurality of test electrodes and a plurality of heaters are respectively distributed in an array on the first surface and the second surface, and the plurality o f test electrodes correspond to the plurality of heaters one to one in location. Currently amended
A nitrogen oxide gas sensor based on sulfur-doped graphene comprising: a micro heater platform substrate with a first surface and a second surface; a heater located on the first surface of the micro heater platform substrate; an insulating layer located on the heater; a test electrode located on the insulating layer; a sulfur-doped graphene located on the first surface of the micro heater platform substrate covering the test electrode and the first surface of the micro heater platform substrate. New
19
Dependent← claim 18nitrogen oxide gas sensor (single-surface single micro heater, one pair of electrodes)
The nitrogen oxide gas sensor based on sulfur-doped graphene according to claim 18, wherein the micro heater platform substrate is a single micro heater platform, the number of the test electrode is one pair, the number of the heater is one, and the pair of test electrode is disposed above the heater. New
20
Dependent← claim 18nitrogen oxide gas sensor (single-surface wafer level array)
The nitrogen oxide gas sensor based on the micro heater platform substrate is a wafer level plurality of heaters are respectively distributed in platform substrate, and the plurality of test electrodes one in location. New sulfur-doped graphene according to claim 18, wherein substrate, a plurality of test electrodes and a an array on the first surface of the micro heater correspond to the plurality of heaters one to
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
nitrogen oxide gas sensor (two-surface configuration)
sulfur-doped graphenesensing layer
heaterheater
testelectrodetest electrode
substratesubstrate
nitrogen oxide gas sensor (single micro heater platform, one pair of electrodes)
sulfur-doped graphenesensing layer
Materials
Materials described outside the worked examples.
graphene
Sensing Material Precursor
sulfur-doped graphene
Gas Sensing Material
Process steps
Additional fabrication and treatment steps described in the patent.
1
Cvd Doping
Step 1
Ambient
inert gas/H2/sulfur source gas
Process details
step1:
Patent
Atlas literature
Patent
US 10,908,107
NITROGEN OXIDE GAS SENSOR BASED ON SULFUR DOPED GRAPHENE AND PREPARATION METHOD THEREFOR
TIE LI
US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 illustrates a flowchart of a preparation method for nitrogen oxide gas sensor based on sulfur-doped graphene provided by the present invention.
FIG. 2
FIG. 2a. b) The intrinsic graphene 21 is transferred onto a micro heater platform substrate 23 by using a direct transfer method. In this embodiment, the micro …
FIG. 3
FIG. 3e. Speci fi cally, fi rstly, PMMA 27 is uniformly coated onto the surface of the intrinsic 1 graphene 21, and the micro heater platform substrate 23 is …
FIG. 4
FIG. 4. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the 1 …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
7 independent · 13 dependent
1
Independentgraphenesulfur-doped graphene
A preparation method for nitrogen oxide gas sensor based on sulfur-doped graphene, characterized in that the method comprises the following steps: 1) providing graphene and a micro heater platform substrate, and transferring the graphene onto the micro heater platform substrate; 2) putting the micro heater platform substrate covered with the graphene into a chemical vapor deposition reaction furnace; 3) performing gas feeding and exhausting treatment to the reaction furnace by using inert gas; 4) simultaneously feeding inert gas and hydrogen gas into the reaction furnace at a first temperature; 5) feeding inert gas, hydrogen gas and sulfur source gas into the reaction furnace at a second temperature for reaction to perform sulfur doping to the graphene; and 6) stopping feeding the sulfur source gas, and performing cooling to the reaction furnace in a hydrogen gas and insert gas shielding atmosphere. Withdrawn
2
Dependent← claim 1intrinsic graphene
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 1), the graphene is intrinsic graphene. Withdrawn
3
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 1), the micro heater platform substrate is a single micro heater platform or a wafer level substrate. Withdrawn
4
Dependent← claim 1graphene
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 1), a test electrode and a heater are provided on the micro heater platform substrate, and the graphene at least covers the test electrode. Withdrawn
5
Dependent← claim 1graphene
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 1), the graphene is transferred onto the micro heater platform substrate by adopting a direct transfer method or PMMA method. Withdrawn
6
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 3), the flow rate of the inert gas is 5 00s c cm-5000sc cm, and the gas feeding and exhausting treatment time is 2min-3 0 min. Withdrawn
7
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 4), the first temperature is 200 ° C-700 ° C; the flow rate of mixed gas of the hydrogen gas and the inert gas is 100sc cm- 5000sc cm; and the mixing ratio of the hydrogen gas to the inert gas is 10 %-90%. Withdrawn
8
Dependent← claim 1sulfur source gas
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 5), the second temperature is 300 ° C-900 ° C; the flow rate of the inert gas is 5 00s c cm- 5000sc cm, the flow rate of the hydrogen gas is 10sc cm- 1 00sc c m and the flow rate of the sulfur source gas is 0. 5sc cm- 50sc cm; and the doping time is 10 min- 50 min. Withdrawn
9
Dependent← claim 1H₂SCOS
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that the sulfur source gas comprises one or more of hydrogen sulfide and carbonyl sulfide. Withdrawn
10
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 5), temperature is increased from the first temperature to the second temperature, the temperature is kept at the second temperature for min-20min, and then the sulfur source gas is fed into the reaction furnace. Withdrawn
11
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 6), the flow rate of the inert gas is 50sc cm-300s c cm, and the flow rate of the hydrogen gas is 10sc cm-40s c cm. Withdrawn
12
Independentsulfur-doped graphenenitrogen oxide gas sensor (two-surface configuration)
A nitrogen oxide gas sensor based on sulfur-doped graphene-comprising: a micro heater platform substrate with a first surface and a second surface; a test electrode located on the first surface of the micro heater platform substrate a heater located on the second surface of the micro heater platform substrate; and a sulfur-doped graphene located on the first surface of the micro heater platform substrate covering the test electrode and the first surface of the micro heater platform substrate.. Currently amended
13
Independent
Canceled
14
Independentnitrogen oxide gas sensor (single micro heater platform, one pair of electrodes)
The nitrogen oxide gas sensor based on sulfur-doped graphene according to claim 1244, wherein the micro heater platform substrate is a single micro heater platform, the number of the test electrode is one pair, the number of the heater is one, and the pair of test electrode is disposed above the heater.. Currently amended
15
Independentnitrogen oxide gas sensor (wafer level, array configuration, two-surface)
The nitrogen oxide gas sensor based on sulfur-doped graphene according to claim 1244, wherein the micro heater platform substrate is a wafer level substrate s, a plurality of test electrodes and a plurality of heaters are respectively distributed in an array on the first surface and the second surface, and the plurality o f test electrodes correspond to the plurality of heaters one to one in location. Currently amended
A nitrogen oxide gas sensor based on sulfur-doped graphene comprising: a micro heater platform substrate with a first surface and a second surface; a heater located on the first surface of the micro heater platform substrate; an insulating layer located on the heater; a test electrode located on the insulating layer; a sulfur-doped graphene located on the first surface of the micro heater platform substrate covering the test electrode and the first surface of the micro heater platform substrate. New
19
Dependent← claim 18nitrogen oxide gas sensor (single-surface single micro heater, one pair of electrodes)
The nitrogen oxide gas sensor based on sulfur-doped graphene according to claim 18, wherein the micro heater platform substrate is a single micro heater platform, the number of the test electrode is one pair, the number of the heater is one, and the pair of test electrode is disposed above the heater. New
20
Dependent← claim 18nitrogen oxide gas sensor (single-surface wafer level array)
The nitrogen oxide gas sensor based on the micro heater platform substrate is a wafer level plurality of heaters are respectively distributed in platform substrate, and the plurality of test electrodes one in location. New sulfur-doped graphene according to claim 18, wherein substrate, a plurality of test electrodes and a an array on the first surface of the micro heater correspond to the plurality of heaters one to
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
nitrogen oxide gas sensor (two-surface configuration)
sulfur-doped graphenesensing layer
heaterheater
testelectrodetest electrode
substratesubstrate
nitrogen oxide gas sensor (single micro heater platform, one pair of electrodes)
sulfur-doped graphenesensing layer
Materials
Materials described outside the worked examples.
graphene
Sensing Material Precursor
sulfur-doped graphene
Gas Sensing Material
Process steps
Additional fabrication and treatment steps described in the patent.
1
Cvd Doping
Step 1
Ambient
inert gas/H2/sulfur source gas
Process details
step1:
Patent
Atlas literature
Patent
US 10,908,107
NITROGEN OXIDE GAS SENSOR BASED ON SULFUR DOPED GRAPHENE AND PREPARATION METHOD THEREFOR
TIE LI
US
Drawings
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1
FIG. 1 illustrates a flowchart of a preparation method for nitrogen oxide gas sensor based on sulfur-doped graphene provided by the present invention.
FIG. 2
FIG. 2a. b) The intrinsic graphene 21 is transferred onto a micro heater platform substrate 23 by using a direct transfer method. In this embodiment, the micro …
FIG. 3
FIG. 3e. Speci fi cally, fi rstly, PMMA 27 is uniformly coated onto the surface of the intrinsic 1 graphene 21, and the micro heater platform substrate 23 is …
FIG. 4
FIG. 4. It needs to be stated that the drawings provided in the following embodiments are just used for schematically describing the basic concept of the 1 …
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
7 independent · 13 dependent
1
Independentgraphenesulfur-doped graphene
A preparation method for nitrogen oxide gas sensor based on sulfur-doped graphene, characterized in that the method comprises the following steps: 1) providing graphene and a micro heater platform substrate, and transferring the graphene onto the micro heater platform substrate; 2) putting the micro heater platform substrate covered with the graphene into a chemical vapor deposition reaction furnace; 3) performing gas feeding and exhausting treatment to the reaction furnace by using inert gas; 4) simultaneously feeding inert gas and hydrogen gas into the reaction furnace at a first temperature; 5) feeding inert gas, hydrogen gas and sulfur source gas into the reaction furnace at a second temperature for reaction to perform sulfur doping to the graphene; and 6) stopping feeding the sulfur source gas, and performing cooling to the reaction furnace in a hydrogen gas and insert gas shielding atmosphere. Withdrawn
2
Dependent← claim 1intrinsic graphene
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 1), the graphene is intrinsic graphene. Withdrawn
3
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 1), the micro heater platform substrate is a single micro heater platform or a wafer level substrate. Withdrawn
4
Dependent← claim 1graphene
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 1), a test electrode and a heater are provided on the micro heater platform substrate, and the graphene at least covers the test electrode. Withdrawn
5
Dependent← claim 1graphene
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 1), the graphene is transferred onto the micro heater platform substrate by adopting a direct transfer method or PMMA method. Withdrawn
6
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 3), the flow rate of the inert gas is 5 00s c cm-5000sc cm, and the gas feeding and exhausting treatment time is 2min-3 0 min. Withdrawn
7
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 4), the first temperature is 200 ° C-700 ° C; the flow rate of mixed gas of the hydrogen gas and the inert gas is 100sc cm- 5000sc cm; and the mixing ratio of the hydrogen gas to the inert gas is 10 %-90%. Withdrawn
8
Dependent← claim 1sulfur source gas
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 5), the second temperature is 300 ° C-900 ° C; the flow rate of the inert gas is 5 00s c cm- 5000sc cm, the flow rate of the hydrogen gas is 10sc cm- 1 00sc c m and the flow rate of the sulfur source gas is 0. 5sc cm- 50sc cm; and the doping time is 10 min- 50 min. Withdrawn
9
Dependent← claim 1H₂SCOS
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that the sulfur source gas comprises one or more of hydrogen sulfide and carbonyl sulfide. Withdrawn
10
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 5), temperature is increased from the first temperature to the second temperature, the temperature is kept at the second temperature for min-20min, and then the sulfur source gas is fed into the reaction furnace. Withdrawn
11
Dependent← claim 1
The preparation method for nitrogen oxide gas sensor based on sulfur- doped graphene according to claim 1, characterized in that, in step 6), the flow rate of the inert gas is 50sc cm-300s c cm, and the flow rate of the hydrogen gas is 10sc cm-40s c cm. Withdrawn
12
Independentsulfur-doped graphenenitrogen oxide gas sensor (two-surface configuration)
A nitrogen oxide gas sensor based on sulfur-doped graphene-comprising: a micro heater platform substrate with a first surface and a second surface; a test electrode located on the first surface of the micro heater platform substrate a heater located on the second surface of the micro heater platform substrate; and a sulfur-doped graphene located on the first surface of the micro heater platform substrate covering the test electrode and the first surface of the micro heater platform substrate.. Currently amended
13
Independent
Canceled
14
Independentnitrogen oxide gas sensor (single micro heater platform, one pair of electrodes)
The nitrogen oxide gas sensor based on sulfur-doped graphene according to claim 1244, wherein the micro heater platform substrate is a single micro heater platform, the number of the test electrode is one pair, the number of the heater is one, and the pair of test electrode is disposed above the heater.. Currently amended
15
Independentnitrogen oxide gas sensor (wafer level, array configuration, two-surface)
The nitrogen oxide gas sensor based on sulfur-doped graphene according to claim 1244, wherein the micro heater platform substrate is a wafer level substrate s, a plurality of test electrodes and a plurality of heaters are respectively distributed in an array on the first surface and the second surface, and the plurality o f test electrodes correspond to the plurality of heaters one to one in location. Currently amended
A nitrogen oxide gas sensor based on sulfur-doped graphene comprising: a micro heater platform substrate with a first surface and a second surface; a heater located on the first surface of the micro heater platform substrate; an insulating layer located on the heater; a test electrode located on the insulating layer; a sulfur-doped graphene located on the first surface of the micro heater platform substrate covering the test electrode and the first surface of the micro heater platform substrate. New
19
Dependent← claim 18nitrogen oxide gas sensor (single-surface single micro heater, one pair of electrodes)
The nitrogen oxide gas sensor based on sulfur-doped graphene according to claim 18, wherein the micro heater platform substrate is a single micro heater platform, the number of the test electrode is one pair, the number of the heater is one, and the pair of test electrode is disposed above the heater. New
20
Dependent← claim 18nitrogen oxide gas sensor (single-surface wafer level array)
The nitrogen oxide gas sensor based on the micro heater platform substrate is a wafer level plurality of heaters are respectively distributed in platform substrate, and the plurality of test electrodes one in location. New sulfur-doped graphene according to claim 18, wherein substrate, a plurality of test electrodes and a an array on the first surface of the micro heater correspond to the plurality of heaters one to
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
nitrogen oxide gas sensor (two-surface configuration)
sulfur-doped graphenesensing layer
heaterheater
testelectrodetest electrode
substratesubstrate
nitrogen oxide gas sensor (single micro heater platform, one pair of electrodes)
sulfur-doped graphenesensing layer
Materials
Materials described outside the worked examples.
graphene
Sensing Material Precursor
sulfur-doped graphene
Gas Sensing Material
Process steps
Additional fabrication and treatment steps described in the patent.
nitrogen oxide gas sensor (single-surface single micro heater, one pair of electrodes)
sulfur-doped graphenesensing layer
testelectrodetest electrode
insulatinglayerinsulating layer
heaterheater
substratesubstrate
nitrogen oxide gas sensor (single-surface wafer level array)
sulfur-doped graphenesensing layer
testelectrodesarraytest electrodes array
insulatinglayerinsulating layer
heatersarrayheaters array
substratesubstrate
intrinsic graphene
Sensing Material Precursor
sulfur source gas
Dopant Precursor
hydrogen sulfide
H₂S
Sulfur Source Gas
carbonyl sulfide
COS
Sulfur Source Gas
Transfer graphene onto micro heater platform substrate
step2:Load substrate into CVD reaction furnace
step3:Purge furnace with inert gas; flow rate 500-5000 sccm; duration 2-30 min
step4:Feed inert gas and H₂ at first temperature (200-700 degC); mixed gas flow 100-5000 sccm; H2:inert ratio 10-90%
step5:Raise to second temperature (300-900 degC); hold 5-20 min; feed inert gas (500-5000 sccm), H₂ (10-100 sccm), sulfur source gas (0.5-50 sccm); doping time 10-50 min
step6:Stop sulfur source gas; cool under H₂ + inert gas shielding atmosphere; inert gas flow 50-300 sccm; H₂ flow 10-40 sccm
nitrogen oxide gas sensor (single-surface single micro heater, one pair of electrodes)
sulfur-doped graphenesensing layer
testelectrodetest electrode
insulatinglayerinsulating layer
heaterheater
substratesubstrate
nitrogen oxide gas sensor (single-surface wafer level array)
sulfur-doped graphenesensing layer
testelectrodesarraytest electrodes array
insulatinglayerinsulating layer
heatersarrayheaters array
substratesubstrate
intrinsic graphene
Sensing Material Precursor
sulfur source gas
Dopant Precursor
hydrogen sulfide
H₂S
Sulfur Source Gas
carbonyl sulfide
COS
Sulfur Source Gas
Transfer graphene onto micro heater platform substrate
step2:Load substrate into CVD reaction furnace
step3:Purge furnace with inert gas; flow rate 500-5000 sccm; duration 2-30 min
step4:Feed inert gas and H₂ at first temperature (200-700 degC); mixed gas flow 100-5000 sccm; H2:inert ratio 10-90%
step5:Raise to second temperature (300-900 degC); hold 5-20 min; feed inert gas (500-5000 sccm), H₂ (10-100 sccm), sulfur source gas (0.5-50 sccm); doping time 10-50 min
step6:Stop sulfur source gas; cool under H₂ + inert gas shielding atmosphere; inert gas flow 50-300 sccm; H₂ flow 10-40 sccm
nitrogen oxide gas sensor (single-surface single micro heater, one pair of electrodes)
sulfur-doped graphenesensing layer
testelectrodetest electrode
insulatinglayerinsulating layer
heaterheater
substratesubstrate
nitrogen oxide gas sensor (single-surface wafer level array)
sulfur-doped graphenesensing layer
testelectrodesarraytest electrodes array
insulatinglayerinsulating layer
heatersarrayheaters array
substratesubstrate
intrinsic graphene
Sensing Material Precursor
sulfur source gas
Dopant Precursor
hydrogen sulfide
H₂S
Sulfur Source Gas
carbonyl sulfide
COS
Sulfur Source Gas
Transfer graphene onto micro heater platform substrate
step2:Load substrate into CVD reaction furnace
step3:Purge furnace with inert gas; flow rate 500-5000 sccm; duration 2-30 min
step4:Feed inert gas and H₂ at first temperature (200-700 degC); mixed gas flow 100-5000 sccm; H2:inert ratio 10-90%
step5:Raise to second temperature (300-900 degC); hold 5-20 min; feed inert gas (500-5000 sccm), H₂ (10-100 sccm), sulfur source gas (0.5-50 sccm); doping time 10-50 min
step6:Stop sulfur source gas; cool under H₂ + inert gas shielding atmosphere; inert gas flow 50-300 sccm; H₂ flow 10-40 sccm
nitrogen oxide gas sensor (single-surface single micro heater, one pair of electrodes)
sulfur-doped graphenesensing layer
testelectrodetest electrode
insulatinglayerinsulating layer
heaterheater
substratesubstrate
nitrogen oxide gas sensor (single-surface wafer level array)
sulfur-doped graphenesensing layer
testelectrodesarraytest electrodes array
insulatinglayerinsulating layer
heatersarrayheaters array
substratesubstrate
intrinsic graphene
Sensing Material Precursor
sulfur source gas
Dopant Precursor
hydrogen sulfide
H₂S
Sulfur Source Gas
carbonyl sulfide
COS
Sulfur Source Gas
Transfer graphene onto micro heater platform substrate
step2:Load substrate into CVD reaction furnace
step3:Purge furnace with inert gas; flow rate 500-5000 sccm; duration 2-30 min
step4:Feed inert gas and H₂ at first temperature (200-700 degC); mixed gas flow 100-5000 sccm; H2:inert ratio 10-90%
step5:Raise to second temperature (300-900 degC); hold 5-20 min; feed inert gas (500-5000 sccm), H₂ (10-100 sccm), sulfur source gas (0.5-50 sccm); doping time 10-50 min
step6:Stop sulfur source gas; cool under H₂ + inert gas shielding atmosphere; inert gas flow 50-300 sccm; H₂ flow 10-40 sccm