Patent
US 10,861,696NANOWIRE EPITAXY ON A GRAPHITIC SUBSTRATE
Helge Weman, Bjorn-Ove Fimland, Dong Chul Kim
NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)·US
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Atlas literature
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US 10,861,696Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 2 shows a MBE experimental set up. Figure 3a is an idealised depiction of Ga (self) catalysed GaAs nanowires grown o n graphite. Figure 3b is a 45 ' tilted view SEM image of two vertical Ga assisted GaAs nanowires grown by MBE o n a fla ke of Kish graphite. The spherical particles are Ga …
Figure 4 sh o ws a depiction of a mask o n the graphite surface, which has been etched with h o les. The invention will now be described with reference to the f o llowing non limiting examples. Examp le 1 Experime n tal p r ocedure: Nanowires (NWs) were grown in a Varian Gen II Modular molecular …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A composition of matter comprising at least one nanowire on a graphitic substrate, said at least one nanowire having been grown epitaxially on said substrate, wherein said nanowire comprises at least one group III -V compound or at least one group I I -VI compound or comprises at least one non carbon group IV element.
A composition as claimed in claim 1 wherein said nanowire grows in the
[111] or [0001] direction.
Layer stacks claimed or described, ordered top of device to substrate.
epitaxial nanowire on graphitic substrate
Materials described outside the worked examples.
group III-V compound
group II-VI compound
non-carbon group IV element
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 shows a MBE experimental set up. Figure 3a is an idealised depiction of Ga (self) catalysed GaAs nanowires grown o n graphite. Figure 3b is a 45 ' tilted view SEM image of two vertical Ga assisted GaAs nanowires grown by MBE o n a fla ke of Kish graphite. The spherical particles are Ga …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 200 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,861,696Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 2 shows a MBE experimental set up. Figure 3a is an idealised depiction of Ga (self) catalysed GaAs nanowires grown o n graphite. Figure 3b is a 45 ' tilted view SEM image of two vertical Ga assisted GaAs nanowires grown by MBE o n a fla ke of Kish graphite. The spherical particles are Ga …
Figure 4 sh o ws a depiction of a mask o n the graphite surface, which has been etched with h o les. The invention will now be described with reference to the f o llowing non limiting examples. Examp le 1 Experime n tal p r ocedure: Nanowires (NWs) were grown in a Varian Gen II Modular molecular …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A composition of matter comprising at least one nanowire on a graphitic substrate, said at least one nanowire having been grown epitaxially on said substrate, wherein said nanowire comprises at least one group III -V compound or at least one group I I -VI compound or comprises at least one non carbon group IV element.
A composition as claimed in claim 1 wherein said nanowire grows in the
[111] or [0001] direction.
Layer stacks claimed or described, ordered top of device to substrate.
epitaxial nanowire on graphitic substrate
Materials described outside the worked examples.
group III-V compound
group II-VI compound
non-carbon group IV element
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 shows a MBE experimental set up. Figure 3a is an idealised depiction of Ga (self) catalysed GaAs nanowires grown o n graphite. Figure 3b is a 45 ' tilted view SEM image of two vertical Ga assisted GaAs nanowires grown by MBE o n a fla ke of Kish graphite. The spherical particles are Ga …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 200 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,861,696Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 2 shows a MBE experimental set up. Figure 3a is an idealised depiction of Ga (self) catalysed GaAs nanowires grown o n graphite. Figure 3b is a 45 ' tilted view SEM image of two vertical Ga assisted GaAs nanowires grown by MBE o n a fla ke of Kish graphite. The spherical particles are Ga …
Figure 4 sh o ws a depiction of a mask o n the graphite surface, which has been etched with h o les. The invention will now be described with reference to the f o llowing non limiting examples. Examp le 1 Experime n tal p r ocedure: Nanowires (NWs) were grown in a Varian Gen II Modular molecular …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A composition of matter comprising at least one nanowire on a graphitic substrate, said at least one nanowire having been grown epitaxially on said substrate, wherein said nanowire comprises at least one group III -V compound or at least one group I I -VI compound or comprises at least one non carbon group IV element.
A composition as claimed in claim 1 wherein said nanowire grows in the
[111] or [0001] direction.
Layer stacks claimed or described, ordered top of device to substrate.
epitaxial nanowire on graphitic substrate
Materials described outside the worked examples.
group III-V compound
group II-VI compound
non-carbon group IV element
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 shows a MBE experimental set up. Figure 3a is an idealised depiction of Ga (self) catalysed GaAs nanowires grown o n graphite. Figure 3b is a 45 ' tilted view SEM image of two vertical Ga assisted GaAs nanowires grown by MBE o n a fla ke of Kish graphite. The spherical particles are Ga …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 200 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,861,696Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 2 shows a MBE experimental set up. Figure 3a is an idealised depiction of Ga (self) catalysed GaAs nanowires grown o n graphite. Figure 3b is a 45 ' tilted view SEM image of two vertical Ga assisted GaAs nanowires grown by MBE o n a fla ke of Kish graphite. The spherical particles are Ga …
Figure 4 sh o ws a depiction of a mask o n the graphite surface, which has been etched with h o les. The invention will now be described with reference to the f o llowing non limiting examples. Examp le 1 Experime n tal p r ocedure: Nanowires (NWs) were grown in a Varian Gen II Modular molecular …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A composition of matter comprising at least one nanowire on a graphitic substrate, said at least one nanowire having been grown epitaxially on said substrate, wherein said nanowire comprises at least one group III -V compound or at least one group I I -VI compound or comprises at least one non carbon group IV element.
A composition as claimed in claim 1 wherein said nanowire grows in the
[111] or [0001] direction.
Layer stacks claimed or described, ordered top of device to substrate.
epitaxial nanowire on graphitic substrate
Materials described outside the worked examples.
group III-V compound
group II-VI compound
non-carbon group IV element
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2 shows a MBE experimental set up. Figure 3a is an idealised depiction of Ga (self) catalysed GaAs nanowires grown o n graphite. Figure 3b is a 45 ' tilted view SEM image of two vertical Ga assisted GaAs nanowires grown by MBE o n a fla ke of Kish graphite. The spherical particles are Ga …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 200 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
graphitic substrate
graphene
GaAs
GaN
InP
ZnO
Si
| — |
graphitic substrate
graphene
GaAs
GaN
InP
ZnO
Si
| — |
graphitic substrate
graphene
GaAs
GaN
InP
ZnO
Si
| — |
graphitic substrate
graphene
GaAs
GaN
InP
ZnO
Si
| — |