\nonie' Docket No \ (t1(2 7;i 104 2m T he li sti ng of t he Caim:. (O riginal) A method of i;n ting a. sen andfctor dce iL comprising: f1 n n i a bottom uate electrode in a substra te: in nun1112 a 114 insulat ing lax i over the \:t iaIe covering the bo ttom ode electrode; c illn a f i cavity m the first ins ulati ng la yer, wherein the first cavity is aligned with the bottom gate electrode; ti1 b, the first cavity with a second la y er of in %.n: in m ateria l: pl anar izin g t he second 1:n e t of insulatin g material using the first insulting layer as a n etch stop to fhnun a u t phln:rued ales fl, f miniig a um aphene lay er o n t h e first pl anai ied surface; linn in one or more sense electrodes on th e uraphenc L e, wherein the one or m11orle sense electrodes are disposed o n the g rap h ene l a e t adjaceni to the ini cavity; VoinL a third insulating la er over (lie 2iaphene la s ct and covering dle one or more sense electrodes; etchin g a second cavity in the thi d insuMinc la,,er. w herein the second cavity is ali g ned with the first cavity; filli n g the second cavity with a froua lh layer o f insulamino material; plaim zing the wounh layer o f insulatin g material -t'lpinC o n t he thirl insiln' lay er to fo-r a se cond pluiiiz ed surfacc: 1(m113 i a fit l insulating la y er o ver t h e second pla n arized surface, Corii iin' a top gate elccv'de over the f ifth in sulat i ng laxci. the top gate e lect rode aliied x ith the first and second cavities; dit in ' the substrate to form an individual se m ico n ducto r n u- im ucture; removing the second and fourth layers o f ins ula iin material from the first and second cav i ties, es-pcclix ely, to fo rm fi rst and second op eni. cavit i es, and mieinnlri an elongated nano-structure to a portion of the p aI phene layer that is snpciidc betwee n iw fi, and second open cavities. 2 \nimLe Docket No, \ (R (L)II 104731 S₂

9. (C utiemdn0 Amended) A method of.mit111 a semiconductor device>,,E nipri i an' tonngul a bottom ate elect rode; Ca ming a first iin1ulat la yer over the bottom g ate e l ectr od e, ithe f irs t is l.ai nn layer com prising a first open cavity etched in a surface of the first i nsu lat ing lay er. wherein the first open c avi ty is;ali ned u i the botto m g ate e lec trode; f'iia ag a cn rllahe layer over an d in contact with said surf a ce of the first insu l ating l ayer; 1it Docket No \ (tlu2i 1043 2 fniing one or more sense electrodes on the uia phcne layer; Cun ingQ a seco nd ins ulai Eno layer o ver.iid in Coit ict u\ ith the ra phenblii Li the second insulati ng layer %orn pi ii a second open ca vity etched in the en 'iI ''lui I: ek ni herin 11:. 1t1E₁ t. i 'it [oh i nd ii ii " 11 the di, f.j g ca iy.......... '........}.!.... !."..i......i..l........d...h.h E r p n av t fan n m a top gate electrode over the sec ond insulat ing laver, wherein the top g ate elecio de is oli;e d with the first and second ope n cavit ies; nid Tounting an eltOntcd ni aini- tructure to a portion of 111 aphr' layer th at is; \uspeinded between the first and second open cavities.

\nonie' Docket No \ (t1(2 7;i 104 2m T he li sti ng of t he Caim:. (O riginal) A method of i;n ting a. sen andfctor dce iL comprising: f1 n n i a bottom uate electrode in a substra te: in nun1112 a 114 insulat ing lax i over the \:t iaIe covering the bo ttom ode electrode; c illn a f i cavity m the first ins ulati ng la yer, wherein the first cavity is aligned with the bottom gate electrode; ti1 b, the first cavity with a second la y er of in %.n: in m ateria l: pl anar izin g t he second 1:n e t of insulatin g material using the first insulting layer as a n etch stop to fhnun a u t phln:rued ales fl, f miniig a um aphene lay er o n t h e first pl anai ied surface; linn in one or more sense electrodes on th e uraphenc L e, wherein the one or m11orle sense electrodes are disposed o n the g rap h ene l a e t adjaceni to the ini cavity; VoinL a third insulating la er over (lie 2iaphene la s ct and covering dle one or more sense electrodes; etchin g a second cavity in the thi d insuMinc la,,er. w herein the second cavity is ali g ned with the first cavity; filli n g the second cavity with a froua lh layer o f insulamino material; plaim zing the wounh layer o f insulatin g material -t'lpinC o n t he thirl insiln' lay er to fo-r a se cond pluiiiz ed surfacc: 1(m113 i a fit l insulating la y er o ver t h e second pla n arized surface, Corii iin' a top gate elccv'de over the f ifth in sulat i ng laxci. the top gate e lect rode aliied x ith the first and second cavities; dit in ' the substrate to form an individual se m ico n ducto r n u- im ucture; removing the second and fourth layers o f ins ula iin material from the first and second cav i ties, es-pcclix ely, to fo rm fi rst and second op eni. cavit i es, and mieinnlri an elongated nano-structure to a portion of the p aI phene layer that is snpciidc betwee n iw fi, and second open cavities. 2 \nimLe Docket No, \ (R (L)II 104731 S₂

9. (C utiemdn0 Amended) A method of.mit111 a semiconductor device>,,E nipri i an' tonngul a bottom ate elect rode; Ca ming a first iin1ulat la yer over the bottom g ate e l ectr od e, ithe f irs t is l.ai nn layer com prising a first open cavity etched in a surface of the first i nsu lat ing lay er. wherein the first open c avi ty is;ali ned u i the botto m g ate e lec trode; f'iia ag a cn rllahe layer over an d in contact with said surf a ce of the first insu l ating l ayer; 1it Docket No \ (tlu2i 1043 2 fniing one or more sense electrodes on the uia phcne layer; Cun ingQ a seco nd ins ulai Eno layer o ver.iid in Coit ict u\ ith the ra phenblii Li the second insulati ng layer %orn pi ii a second open ca vity etched in the en 'iI ''lui I: ek ni herin 11:. 1t1E₁ t. i 'it [oh i nd ii ii " 11 the di, f.j g ca iy.......... '........}.!.... !."..i......i..l........d...h.h E r p n av t fan n m a top gate electrode over the sec ond insulat ing laver, wherein the top g ate elecio de is oli;e d with the first and second ope n cavit ies; nid Tounting an eltOntcd ni aini- tructure to a portion of 111 aphr' layer th at is; \uspeinded between the first and second open cavities.

\nonie' Docket No \ (t1(2 7;i 104 2m T he li sti ng of t he Caim:. (O riginal) A method of i;n ting a. sen andfctor dce iL comprising: f1 n n i a bottom uate electrode in a substra te: in nun1112 a 114 insulat ing lax i over the \:t iaIe covering the bo ttom ode electrode; c illn a f i cavity m the first ins ulati ng la yer, wherein the first cavity is aligned with the bottom gate electrode; ti1 b, the first cavity with a second la y er of in %.n: in m ateria l: pl anar izin g t he second 1:n e t of insulatin g material using the first insulting layer as a n etch stop to fhnun a u t phln:rued ales fl, f miniig a um aphene lay er o n t h e first pl anai ied surface; linn in one or more sense electrodes on th e uraphenc L e, wherein the one or m11orle sense electrodes are disposed o n the g rap h ene l a e t adjaceni to the ini cavity; VoinL a third insulating la er over (lie 2iaphene la s ct and covering dle one or more sense electrodes; etchin g a second cavity in the thi d insuMinc la,,er. w herein the second cavity is ali g ned with the first cavity; filli n g the second cavity with a froua lh layer o f insulamino material; plaim zing the wounh layer o f insulatin g material -t'lpinC o n t he thirl insiln' lay er to fo-r a se cond pluiiiz ed surfacc: 1(m113 i a fit l insulating la y er o ver t h e second pla n arized surface, Corii iin' a top gate elccv'de over the f ifth in sulat i ng laxci. the top gate e lect rode aliied x ith the first and second cavities; dit in ' the substrate to form an individual se m ico n ducto r n u- im ucture; removing the second and fourth layers o f ins ula iin material from the first and second cav i ties, es-pcclix ely, to fo rm fi rst and second op eni. cavit i es, and mieinnlri an elongated nano-structure to a portion of the p aI phene layer that is snpciidc betwee n iw fi, and second open cavities. 2 \nimLe Docket No, \ (R (L)II 104731 S₂

9. (C utiemdn0 Amended) A method of.mit111 a semiconductor device>,,E nipri i an' tonngul a bottom ate elect rode; Ca ming a first iin1ulat la yer over the bottom g ate e l ectr od e, ithe f irs t is l.ai nn layer com prising a first open cavity etched in a surface of the first i nsu lat ing lay er. wherein the first open c avi ty is;ali ned u i the botto m g ate e lec trode; f'iia ag a cn rllahe layer over an d in contact with said surf a ce of the first insu l ating l ayer; 1it Docket No \ (tlu2i 1043 2 fniing one or more sense electrodes on the uia phcne layer; Cun ingQ a seco nd ins ulai Eno layer o ver.iid in Coit ict u\ ith the ra phenblii Li the second insulati ng layer %orn pi ii a second open ca vity etched in the en 'iI ''lui I: ek ni herin 11:. 1t1E₁ t. i 'it [oh i nd ii ii " 11 the di, f.j g ca iy.......... '........}.!.... !."..i......i..l........d...h.h E r p n av t fan n m a top gate electrode over the sec ond insulat ing laver, wherein the top g ate elecio de is oli;e d with the first and second ope n cavit ies; nid Tounting an eltOntcd ni aini- tructure to a portion of 111 aphr' layer th at is; \uspeinded between the first and second open cavities.

\nonie' Docket No \ (t1(2 7;i 104 2m T he li sti ng of t he Caim:. (O riginal) A method of i;n ting a. sen andfctor dce iL comprising: f1 n n i a bottom uate electrode in a substra te: in nun1112 a 114 insulat ing lax i over the \:t iaIe covering the bo ttom ode electrode; c illn a f i cavity m the first ins ulati ng la yer, wherein the first cavity is aligned with the bottom gate electrode; ti1 b, the first cavity with a second la y er of in %.n: in m ateria l: pl anar izin g t he second 1:n e t of insulatin g material using the first insulting layer as a n etch stop to fhnun a u t phln:rued ales fl, f miniig a um aphene lay er o n t h e first pl anai ied surface; linn in one or more sense electrodes on th e uraphenc L e, wherein the one or m11orle sense electrodes are disposed o n the g rap h ene l a e t adjaceni to the ini cavity; VoinL a third insulating la er over (lie 2iaphene la s ct and covering dle one or more sense electrodes; etchin g a second cavity in the thi d insuMinc la,,er. w herein the second cavity is ali g ned with the first cavity; filli n g the second cavity with a froua lh layer o f insulamino material; plaim zing the wounh layer o f insulatin g material -t'lpinC o n t he thirl insiln' lay er to fo-r a se cond pluiiiz ed surfacc: 1(m113 i a fit l insulating la y er o ver t h e second pla n arized surface, Corii iin' a top gate elccv'de over the f ifth in sulat i ng laxci. the top gate e lect rode aliied x ith the first and second cavities; dit in ' the substrate to form an individual se m ico n ducto r n u- im ucture; removing the second and fourth layers o f ins ula iin material from the first and second cav i ties, es-pcclix ely, to fo rm fi rst and second op eni. cavit i es, and mieinnlri an elongated nano-structure to a portion of the p aI phene layer that is snpciidc betwee n iw fi, and second open cavities. 2 \nimLe Docket No, \ (R (L)II 104731 S₂

9. (C utiemdn0 Amended) A method of.mit111 a semiconductor device>,,E nipri i an' tonngul a bottom ate elect rode; Ca ming a first iin1ulat la yer over the bottom g ate e l ectr od e, ithe f irs t is l.ai nn layer com prising a first open cavity etched in a surface of the first i nsu lat ing lay er. wherein the first open c avi ty is;ali ned u i the botto m g ate e lec trode; f'iia ag a cn rllahe layer over an d in contact with said surf a ce of the first insu l ating l ayer; 1it Docket No \ (tlu2i 1043 2 fniing one or more sense electrodes on the uia phcne layer; Cun ingQ a seco nd ins ulai Eno layer o ver.iid in Coit ict u\ ith the ra phenblii Li the second insulati ng layer %orn pi ii a second open ca vity etched in the en 'iI ''lui I: ek ni herin 11:. 1t1E₁ t. i 'it [oh i nd ii ii " 11 the di, f.j g ca iy.......... '........}.!.... !."..i......i..l........d...h.h E r p n av t fan n m a top gate electrode over the sec ond insulat ing laver, wherein the top g ate elecio de is oli;e d with the first and second ope n cavit ies; nid Tounting an eltOntcd ni aini- tructure to a portion of 111 aphr' layer th at is; \uspeinded between the first and second open cavities.