Patent
US 8,664,641Nano Device Integrated on Graphene and Monocrystalline Graphite
Gyu-chul Yi, Yong-Jin Kim
US
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Patent
Atlas literature
Patent
US 8,664,641Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nano device, compris ing: a carbon layer in clud ing one-layered graphene hav in g a honeycombed planar structure in which carbon atoms are connected with each other, and two or more-layered monocrystal ln e graphite; and one or more vertically-grown nanostructures formed on the carbon layer.
The nano device accord in g to claim 1, further compris ing: a substrate disposed beneath the carbon layer form ing a component of t o eo nst i tute a circuit.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure is any one selected from a nanorod, a nanoneedle, a nanotube and a nanowall.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure has a ratio of length to diameter (thickness) of 1 ~ 1000.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure has a diameter (thickness) of 1 nm ~ 500 nm.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure has a height of 10 nm ~ 100 m.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure is made of a metal or a semiconductor.
(orig in al) The nano device accord in g to claim 1, where in a recess is formed on the carbon layer. -3- Application no 13/376,382 Atty Docket No U I P SNU PT₁ Office Action dated 06/28/2013 Customer No 24943 Amendment dated 09/30/2013
(o rigin al) The nano device accord in g to claim 1, further comp nsin g: a mask layer between the carbon layers and the one or more nanostructures, the mask layer hav in g one or more ope ni ngs.
(o rigin al) The nano device accord in g to claim 1, further comp risin g: a multilayer film u ni formly cove n ng the surface of the nanostructure.
A nano device, comprising: a carbon layer honeycombed planar structure in which carbon more-layered monocrystal li ne graphite; a source more vertically-grown nanostructures formed on the one or more nanostructures; and a drain electrode
The nano device according to claim 21, further the nanostructures. -5-including one-layered graphene having a atoms are connected with each other, and two or electrode formed on the carbon layer; one or the carbon layer; an insulator formed between formed on the one or more nanostructures. comprising: a dielectric layer formed around
Layer stacks claimed or described, ordered top of device to substrate.
nano device with graphene/graphite carbon layer and vertically-grown nanostructures
nano device transistor with source/drain electrodes and insulator
Materials described outside the worked examples.
graphene (one-layered)
C
nanostructure (vertically-grown)
Patent
Atlas literature
Patent
US 8,664,641Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nano device, compris ing: a carbon layer in clud ing one-layered graphene hav in g a honeycombed planar structure in which carbon atoms are connected with each other, and two or more-layered monocrystal ln e graphite; and one or more vertically-grown nanostructures formed on the carbon layer.
The nano device accord in g to claim 1, further compris ing: a substrate disposed beneath the carbon layer form ing a component of t o eo nst i tute a circuit.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure is any one selected from a nanorod, a nanoneedle, a nanotube and a nanowall.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure has a ratio of length to diameter (thickness) of 1 ~ 1000.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure has a diameter (thickness) of 1 nm ~ 500 nm.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure has a height of 10 nm ~ 100 m.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure is made of a metal or a semiconductor.
(orig in al) The nano device accord in g to claim 1, where in a recess is formed on the carbon layer. -3- Application no 13/376,382 Atty Docket No U I P SNU PT₁ Office Action dated 06/28/2013 Customer No 24943 Amendment dated 09/30/2013
(o rigin al) The nano device accord in g to claim 1, further comp nsin g: a mask layer between the carbon layers and the one or more nanostructures, the mask layer hav in g one or more ope ni ngs.
(o rigin al) The nano device accord in g to claim 1, further comp risin g: a multilayer film u ni formly cove n ng the surface of the nanostructure.
A nano device, comprising: a carbon layer honeycombed planar structure in which carbon more-layered monocrystal li ne graphite; a source more vertically-grown nanostructures formed on the one or more nanostructures; and a drain electrode
The nano device according to claim 21, further the nanostructures. -5-including one-layered graphene having a atoms are connected with each other, and two or electrode formed on the carbon layer; one or the carbon layer; an insulator formed between formed on the one or more nanostructures. comprising: a dielectric layer formed around
Layer stacks claimed or described, ordered top of device to substrate.
nano device with graphene/graphite carbon layer and vertically-grown nanostructures
nano device transistor with source/drain electrodes and insulator
Materials described outside the worked examples.
graphene (one-layered)
C
nanostructure (vertically-grown)
Patent
Atlas literature
Patent
US 8,664,641Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nano device, compris ing: a carbon layer in clud ing one-layered graphene hav in g a honeycombed planar structure in which carbon atoms are connected with each other, and two or more-layered monocrystal ln e graphite; and one or more vertically-grown nanostructures formed on the carbon layer.
The nano device accord in g to claim 1, further compris ing: a substrate disposed beneath the carbon layer form ing a component of t o eo nst i tute a circuit.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure is any one selected from a nanorod, a nanoneedle, a nanotube and a nanowall.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure has a ratio of length to diameter (thickness) of 1 ~ 1000.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure has a diameter (thickness) of 1 nm ~ 500 nm.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure has a height of 10 nm ~ 100 m.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure is made of a metal or a semiconductor.
(orig in al) The nano device accord in g to claim 1, where in a recess is formed on the carbon layer. -3- Application no 13/376,382 Atty Docket No U I P SNU PT₁ Office Action dated 06/28/2013 Customer No 24943 Amendment dated 09/30/2013
(o rigin al) The nano device accord in g to claim 1, further comp nsin g: a mask layer between the carbon layers and the one or more nanostructures, the mask layer hav in g one or more ope ni ngs.
(o rigin al) The nano device accord in g to claim 1, further comp risin g: a multilayer film u ni formly cove n ng the surface of the nanostructure.
A nano device, comprising: a carbon layer honeycombed planar structure in which carbon more-layered monocrystal li ne graphite; a source more vertically-grown nanostructures formed on the one or more nanostructures; and a drain electrode
The nano device according to claim 21, further the nanostructures. -5-including one-layered graphene having a atoms are connected with each other, and two or electrode formed on the carbon layer; one or the carbon layer; an insulator formed between formed on the one or more nanostructures. comprising: a dielectric layer formed around
Layer stacks claimed or described, ordered top of device to substrate.
nano device with graphene/graphite carbon layer and vertically-grown nanostructures
nano device transistor with source/drain electrodes and insulator
Materials described outside the worked examples.
graphene (one-layered)
C
nanostructure (vertically-grown)
Patent
Atlas literature
Patent
US 8,664,641Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nano device, compris ing: a carbon layer in clud ing one-layered graphene hav in g a honeycombed planar structure in which carbon atoms are connected with each other, and two or more-layered monocrystal ln e graphite; and one or more vertically-grown nanostructures formed on the carbon layer.
The nano device accord in g to claim 1, further compris ing: a substrate disposed beneath the carbon layer form ing a component of t o eo nst i tute a circuit.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure is any one selected from a nanorod, a nanoneedle, a nanotube and a nanowall.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure has a ratio of length to diameter (thickness) of 1 ~ 1000.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure has a diameter (thickness) of 1 nm ~ 500 nm.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure has a height of 10 nm ~ 100 m.
(orig in al) The nano device accord in g to claim 1, where in the nanostructure is made of a metal or a semiconductor.
(orig in al) The nano device accord in g to claim 1, where in a recess is formed on the carbon layer. -3- Application no 13/376,382 Atty Docket No U I P SNU PT₁ Office Action dated 06/28/2013 Customer No 24943 Amendment dated 09/30/2013
(o rigin al) The nano device accord in g to claim 1, further comp nsin g: a mask layer between the carbon layers and the one or more nanostructures, the mask layer hav in g one or more ope ni ngs.
(o rigin al) The nano device accord in g to claim 1, further comp risin g: a multilayer film u ni formly cove n ng the surface of the nanostructure.
A nano device, comprising: a carbon layer honeycombed planar structure in which carbon more-layered monocrystal li ne graphite; a source more vertically-grown nanostructures formed on the one or more nanostructures; and a drain electrode
The nano device according to claim 21, further the nanostructures. -5-including one-layered graphene having a atoms are connected with each other, and two or electrode formed on the carbon layer; one or the carbon layer; an insulator formed between formed on the one or more nanostructures. comprising: a dielectric layer formed around
Layer stacks claimed or described, ordered top of device to substrate.
nano device with graphene/graphite carbon layer and vertically-grown nanostructures
nano device transistor with source/drain electrodes and insulator
Materials described outside the worked examples.
graphene (one-layered)
C
nanostructure (vertically-grown)
metal or semiconductor (nanostructure material)
multilayer film
metal or semiconductor (nanostructure material)
multilayer film
metal or semiconductor (nanostructure material)
multilayer film
metal or semiconductor (nanostructure material)
multilayer film