Patent
US 10,546,964MOLYBDENUM SELENIDE SUBLAYERS WITH CONTROLLED THICKNESS IN SOLAR CELLS AND METHODS FOR FORMING THE SAME
Shih-Wei CHEN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,546,964Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart illustrating steps of a method according to an embodiment of the disclosure; and [0007]
FIGS. 2A-2E are each cross-sectional views and together illustrate a 15 sequence of processing operations used to form a solar cell according to the disclosure.
FIG. 3. [0009] Referring to
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1.-6. (Previously Canceled) Canceled
Canceled
A method for forming a solar cell, said method comprising: forming a layer exclusively of molybdenum (Mo) on a substrate using a Mo deposition operation using a first target in a chamber, but not a second target in the chamber; terminating said Mo deposition operation; forming a Mo-containing layer including at least oxygen therein on said Mo layer using the second target in said chamber but not the first target; selenizing said Mo-containing layer by heating in a selenium (Se) environment including gaseous H₂Se thereby selectively producing a Mo-Se layer from said Mo-containing layer but not from said Mo layer, said selenizing process including heating in the presence of gaseous H₂Se; and after said Mo-Se layer is formed, initiating a step of forming an absorber layer over said Mo-Se layer after said selenizing process is completed, wherein said absorber layer does not change said Mo-Se layer. Currently amended
The method as in claim 7, wherein said providing a substrate with a Mo layer thereon includes sputtering said Mo layer in a sputter deposition chamber and wherein said forming a Mo-containing layer comprises sputtering said Mo-containing layer. Previously presented
The method as in claim 7, wherein said absorber layer is a copper- indium-gallium-selenide (CIGS) absorber layer. Previously presented
(Previously Canceled) Canceled
(Previously Canceled) Canceled
A method for forming a solar cell, said method comprising: providing a substrate; forming a layer exclusively of Mo on said substrate using a Mo deposition operation using a first target in a chamber, but not a second target in the chamber; terminating said Mo deposition operation; forming a Mo-containing layer including at least one of oxygen and nitrogen therein over said Mo layer using the second target in said chamber but not the first target; carrying out a selenization process that converts said Mo-containing layer to Mo-Se but does not convert said Mo layer to Mo-Se, said selenization process including heating in the presence of gaseous H₂Se; and after said Mo-Se layer is formed, initiating a step of forming a CIGS absorber layer over said Mo-Se layer after said selenization process is completed, wherein said CIGS absorber layer does not change said Mo-Se layer. Currently amended
The method as in claim 14, wherein said terminating comprises waiting at least one second prior to said forming a Mo-containing layer over said Mo layer. Original
The method as in claim 14, wherein said Mo deposition operation takes place in a deposition chamber using a first Mo source target, said terminating includes switching to a second Mo source target in said deposition chamber and said forming said Mo-containing layer includes depositing said Mo-containing layer using said second Mo source target. Original
The method as in claim 14, wherein said forming a Mo layer over said substrate includes forming said Mo layer over at least one of a silicon dioxide layer and a barrier layer interposed between said substrate and said Mo layer and wherein said Mo-Se is a layer with a thickness of about 10 nm to about 40 nm. Original
The method as in claim 14, wherein said selenization process includes heating to a temperature within a range of about 350 0 C to 600 0 C for a time within the range of about 8-12 hours. Previously presented
(Previously Canceled) Canceled
(Previously Canceled) Canceled
A method for forming a solar cell, said method comprising: forming a Mo layer exclusively of Mo on a substrate using a first target in a chamber, but not a second target in the chamber; forming a Mo-containing layer including at least oxygen therein, over said Mo layer using the second target in said chamber but not the first target; carrying out a selenization process that converts said Mo-containing layer to a Mo-Se layer but does not convert said Mo layer to Mo-Se, said selenization process including heating in the presence of gaseous H₂Se; and after said Mo-Se layer is formed, initiating a step of forming an absorber layer over said Mo-Se layer after said selenization process is completed, wherein said absorber layer does not change said Mo-Se layer. Currently amended
The method as in claim 21, wherein said Mo-containing layer is a composite layer including a plurality of films including a film of a molybdenum oxide and a film of a molybdenum nitride. Previously presented
The method as in claim 21, further comprising carrying out a sulfurization process simultaneous with said carrying out a selenization process. Previously presented
The method as in claim 21, wherein said CIGS absorber layer. Previously presented
The method as in claim 21, wherein said containing layer each comprise sputtering. Previously forming an absorber layer comprises depositing a carrying out a sulfurization process after said presented forming a Mo layer and said forming a Mo-presented
Layer stacks claimed or described, ordered top of device to substrate.
CIGS solar cell
Materials described outside the worked examples.
molybdenum layer
Mo
Mo-containing layer with oxygen
Mo-Se layer
MoSe₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Mo layer thickness | 150–1000 | Mo |
Mo-containing layer thickness | 5–100 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,546,964Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart illustrating steps of a method according to an embodiment of the disclosure; and [0007]
FIGS. 2A-2E are each cross-sectional views and together illustrate a 15 sequence of processing operations used to form a solar cell according to the disclosure.
FIG. 3. [0009] Referring to
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1.-6. (Previously Canceled) Canceled
Canceled
A method for forming a solar cell, said method comprising: forming a layer exclusively of molybdenum (Mo) on a substrate using a Mo deposition operation using a first target in a chamber, but not a second target in the chamber; terminating said Mo deposition operation; forming a Mo-containing layer including at least oxygen therein on said Mo layer using the second target in said chamber but not the first target; selenizing said Mo-containing layer by heating in a selenium (Se) environment including gaseous H₂Se thereby selectively producing a Mo-Se layer from said Mo-containing layer but not from said Mo layer, said selenizing process including heating in the presence of gaseous H₂Se; and after said Mo-Se layer is formed, initiating a step of forming an absorber layer over said Mo-Se layer after said selenizing process is completed, wherein said absorber layer does not change said Mo-Se layer. Currently amended
The method as in claim 7, wherein said providing a substrate with a Mo layer thereon includes sputtering said Mo layer in a sputter deposition chamber and wherein said forming a Mo-containing layer comprises sputtering said Mo-containing layer. Previously presented
The method as in claim 7, wherein said absorber layer is a copper- indium-gallium-selenide (CIGS) absorber layer. Previously presented
(Previously Canceled) Canceled
(Previously Canceled) Canceled
A method for forming a solar cell, said method comprising: providing a substrate; forming a layer exclusively of Mo on said substrate using a Mo deposition operation using a first target in a chamber, but not a second target in the chamber; terminating said Mo deposition operation; forming a Mo-containing layer including at least one of oxygen and nitrogen therein over said Mo layer using the second target in said chamber but not the first target; carrying out a selenization process that converts said Mo-containing layer to Mo-Se but does not convert said Mo layer to Mo-Se, said selenization process including heating in the presence of gaseous H₂Se; and after said Mo-Se layer is formed, initiating a step of forming a CIGS absorber layer over said Mo-Se layer after said selenization process is completed, wherein said CIGS absorber layer does not change said Mo-Se layer. Currently amended
The method as in claim 14, wherein said terminating comprises waiting at least one second prior to said forming a Mo-containing layer over said Mo layer. Original
The method as in claim 14, wherein said Mo deposition operation takes place in a deposition chamber using a first Mo source target, said terminating includes switching to a second Mo source target in said deposition chamber and said forming said Mo-containing layer includes depositing said Mo-containing layer using said second Mo source target. Original
The method as in claim 14, wherein said forming a Mo layer over said substrate includes forming said Mo layer over at least one of a silicon dioxide layer and a barrier layer interposed between said substrate and said Mo layer and wherein said Mo-Se is a layer with a thickness of about 10 nm to about 40 nm. Original
The method as in claim 14, wherein said selenization process includes heating to a temperature within a range of about 350 0 C to 600 0 C for a time within the range of about 8-12 hours. Previously presented
(Previously Canceled) Canceled
(Previously Canceled) Canceled
A method for forming a solar cell, said method comprising: forming a Mo layer exclusively of Mo on a substrate using a first target in a chamber, but not a second target in the chamber; forming a Mo-containing layer including at least oxygen therein, over said Mo layer using the second target in said chamber but not the first target; carrying out a selenization process that converts said Mo-containing layer to a Mo-Se layer but does not convert said Mo layer to Mo-Se, said selenization process including heating in the presence of gaseous H₂Se; and after said Mo-Se layer is formed, initiating a step of forming an absorber layer over said Mo-Se layer after said selenization process is completed, wherein said absorber layer does not change said Mo-Se layer. Currently amended
The method as in claim 21, wherein said Mo-containing layer is a composite layer including a plurality of films including a film of a molybdenum oxide and a film of a molybdenum nitride. Previously presented
The method as in claim 21, further comprising carrying out a sulfurization process simultaneous with said carrying out a selenization process. Previously presented
The method as in claim 21, wherein said CIGS absorber layer. Previously presented
The method as in claim 21, wherein said containing layer each comprise sputtering. Previously forming an absorber layer comprises depositing a carrying out a sulfurization process after said presented forming a Mo layer and said forming a Mo-presented
Layer stacks claimed or described, ordered top of device to substrate.
CIGS solar cell
Materials described outside the worked examples.
molybdenum layer
Mo
Mo-containing layer with oxygen
Mo-Se layer
MoSe₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Mo layer thickness | 150–1000 | Mo |
Mo-containing layer thickness | 5–100 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,546,964Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart illustrating steps of a method according to an embodiment of the disclosure; and [0007]
FIGS. 2A-2E are each cross-sectional views and together illustrate a 15 sequence of processing operations used to form a solar cell according to the disclosure.
FIG. 3. [0009] Referring to
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1.-6. (Previously Canceled) Canceled
Canceled
A method for forming a solar cell, said method comprising: forming a layer exclusively of molybdenum (Mo) on a substrate using a Mo deposition operation using a first target in a chamber, but not a second target in the chamber; terminating said Mo deposition operation; forming a Mo-containing layer including at least oxygen therein on said Mo layer using the second target in said chamber but not the first target; selenizing said Mo-containing layer by heating in a selenium (Se) environment including gaseous H₂Se thereby selectively producing a Mo-Se layer from said Mo-containing layer but not from said Mo layer, said selenizing process including heating in the presence of gaseous H₂Se; and after said Mo-Se layer is formed, initiating a step of forming an absorber layer over said Mo-Se layer after said selenizing process is completed, wherein said absorber layer does not change said Mo-Se layer. Currently amended
The method as in claim 7, wherein said providing a substrate with a Mo layer thereon includes sputtering said Mo layer in a sputter deposition chamber and wherein said forming a Mo-containing layer comprises sputtering said Mo-containing layer. Previously presented
The method as in claim 7, wherein said absorber layer is a copper- indium-gallium-selenide (CIGS) absorber layer. Previously presented
(Previously Canceled) Canceled
(Previously Canceled) Canceled
A method for forming a solar cell, said method comprising: providing a substrate; forming a layer exclusively of Mo on said substrate using a Mo deposition operation using a first target in a chamber, but not a second target in the chamber; terminating said Mo deposition operation; forming a Mo-containing layer including at least one of oxygen and nitrogen therein over said Mo layer using the second target in said chamber but not the first target; carrying out a selenization process that converts said Mo-containing layer to Mo-Se but does not convert said Mo layer to Mo-Se, said selenization process including heating in the presence of gaseous H₂Se; and after said Mo-Se layer is formed, initiating a step of forming a CIGS absorber layer over said Mo-Se layer after said selenization process is completed, wherein said CIGS absorber layer does not change said Mo-Se layer. Currently amended
The method as in claim 14, wherein said terminating comprises waiting at least one second prior to said forming a Mo-containing layer over said Mo layer. Original
The method as in claim 14, wherein said Mo deposition operation takes place in a deposition chamber using a first Mo source target, said terminating includes switching to a second Mo source target in said deposition chamber and said forming said Mo-containing layer includes depositing said Mo-containing layer using said second Mo source target. Original
The method as in claim 14, wherein said forming a Mo layer over said substrate includes forming said Mo layer over at least one of a silicon dioxide layer and a barrier layer interposed between said substrate and said Mo layer and wherein said Mo-Se is a layer with a thickness of about 10 nm to about 40 nm. Original
The method as in claim 14, wherein said selenization process includes heating to a temperature within a range of about 350 0 C to 600 0 C for a time within the range of about 8-12 hours. Previously presented
(Previously Canceled) Canceled
(Previously Canceled) Canceled
A method for forming a solar cell, said method comprising: forming a Mo layer exclusively of Mo on a substrate using a first target in a chamber, but not a second target in the chamber; forming a Mo-containing layer including at least oxygen therein, over said Mo layer using the second target in said chamber but not the first target; carrying out a selenization process that converts said Mo-containing layer to a Mo-Se layer but does not convert said Mo layer to Mo-Se, said selenization process including heating in the presence of gaseous H₂Se; and after said Mo-Se layer is formed, initiating a step of forming an absorber layer over said Mo-Se layer after said selenization process is completed, wherein said absorber layer does not change said Mo-Se layer. Currently amended
The method as in claim 21, wherein said Mo-containing layer is a composite layer including a plurality of films including a film of a molybdenum oxide and a film of a molybdenum nitride. Previously presented
The method as in claim 21, further comprising carrying out a sulfurization process simultaneous with said carrying out a selenization process. Previously presented
The method as in claim 21, wherein said CIGS absorber layer. Previously presented
The method as in claim 21, wherein said containing layer each comprise sputtering. Previously forming an absorber layer comprises depositing a carrying out a sulfurization process after said presented forming a Mo layer and said forming a Mo-presented
Layer stacks claimed or described, ordered top of device to substrate.
CIGS solar cell
Materials described outside the worked examples.
molybdenum layer
Mo
Mo-containing layer with oxygen
Mo-Se layer
MoSe₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Mo layer thickness | 150–1000 | Mo |
Mo-containing layer thickness | 5–100 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,546,964Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart illustrating steps of a method according to an embodiment of the disclosure; and [0007]
FIGS. 2A-2E are each cross-sectional views and together illustrate a 15 sequence of processing operations used to form a solar cell according to the disclosure.
FIG. 3. [0009] Referring to
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1.-6. (Previously Canceled) Canceled
Canceled
A method for forming a solar cell, said method comprising: forming a layer exclusively of molybdenum (Mo) on a substrate using a Mo deposition operation using a first target in a chamber, but not a second target in the chamber; terminating said Mo deposition operation; forming a Mo-containing layer including at least oxygen therein on said Mo layer using the second target in said chamber but not the first target; selenizing said Mo-containing layer by heating in a selenium (Se) environment including gaseous H₂Se thereby selectively producing a Mo-Se layer from said Mo-containing layer but not from said Mo layer, said selenizing process including heating in the presence of gaseous H₂Se; and after said Mo-Se layer is formed, initiating a step of forming an absorber layer over said Mo-Se layer after said selenizing process is completed, wherein said absorber layer does not change said Mo-Se layer. Currently amended
The method as in claim 7, wherein said providing a substrate with a Mo layer thereon includes sputtering said Mo layer in a sputter deposition chamber and wherein said forming a Mo-containing layer comprises sputtering said Mo-containing layer. Previously presented
The method as in claim 7, wherein said absorber layer is a copper- indium-gallium-selenide (CIGS) absorber layer. Previously presented
(Previously Canceled) Canceled
(Previously Canceled) Canceled
A method for forming a solar cell, said method comprising: providing a substrate; forming a layer exclusively of Mo on said substrate using a Mo deposition operation using a first target in a chamber, but not a second target in the chamber; terminating said Mo deposition operation; forming a Mo-containing layer including at least one of oxygen and nitrogen therein over said Mo layer using the second target in said chamber but not the first target; carrying out a selenization process that converts said Mo-containing layer to Mo-Se but does not convert said Mo layer to Mo-Se, said selenization process including heating in the presence of gaseous H₂Se; and after said Mo-Se layer is formed, initiating a step of forming a CIGS absorber layer over said Mo-Se layer after said selenization process is completed, wherein said CIGS absorber layer does not change said Mo-Se layer. Currently amended
The method as in claim 14, wherein said terminating comprises waiting at least one second prior to said forming a Mo-containing layer over said Mo layer. Original
The method as in claim 14, wherein said Mo deposition operation takes place in a deposition chamber using a first Mo source target, said terminating includes switching to a second Mo source target in said deposition chamber and said forming said Mo-containing layer includes depositing said Mo-containing layer using said second Mo source target. Original
The method as in claim 14, wherein said forming a Mo layer over said substrate includes forming said Mo layer over at least one of a silicon dioxide layer and a barrier layer interposed between said substrate and said Mo layer and wherein said Mo-Se is a layer with a thickness of about 10 nm to about 40 nm. Original
The method as in claim 14, wherein said selenization process includes heating to a temperature within a range of about 350 0 C to 600 0 C for a time within the range of about 8-12 hours. Previously presented
(Previously Canceled) Canceled
(Previously Canceled) Canceled
A method for forming a solar cell, said method comprising: forming a Mo layer exclusively of Mo on a substrate using a first target in a chamber, but not a second target in the chamber; forming a Mo-containing layer including at least oxygen therein, over said Mo layer using the second target in said chamber but not the first target; carrying out a selenization process that converts said Mo-containing layer to a Mo-Se layer but does not convert said Mo layer to Mo-Se, said selenization process including heating in the presence of gaseous H₂Se; and after said Mo-Se layer is formed, initiating a step of forming an absorber layer over said Mo-Se layer after said selenization process is completed, wherein said absorber layer does not change said Mo-Se layer. Currently amended
The method as in claim 21, wherein said Mo-containing layer is a composite layer including a plurality of films including a film of a molybdenum oxide and a film of a molybdenum nitride. Previously presented
The method as in claim 21, further comprising carrying out a sulfurization process simultaneous with said carrying out a selenization process. Previously presented
The method as in claim 21, wherein said CIGS absorber layer. Previously presented
The method as in claim 21, wherein said containing layer each comprise sputtering. Previously forming an absorber layer comprises depositing a carrying out a sulfurization process after said presented forming a Mo layer and said forming a Mo-presented
Layer stacks claimed or described, ordered top of device to substrate.
CIGS solar cell
Materials described outside the worked examples.
molybdenum layer
Mo
Mo-containing layer with oxygen
Mo-Se layer
MoSe₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Mo layer thickness | 150–1000 | Mo |
Mo-containing layer thickness | 5–100 |
Related documents with shared materials, methods, properties, or citations.
gaseous hydrogen selenide
H₂Se
CIGS absorber layer
Cu(In,Ga)Se₂
buffer layer
window layer
silicon dioxide layer
SiO₂
barrier layer
molybdenum oxide film
molybdenum nitride film
Mo-containing layer with oxygen and/or nitrogen
molybdenum oxide
molybdenum nitride
Mo-Se layer thickness (claimed range) | 10–40 | MoSe₂ |
Pressure | 2–10 mTorr | — |
Thickness | 5–100 nm | — |
Thickness | 10–100 nm | — |
Duration | 4–12 hours | — |
Thickness | 5–20 nm | — |
Thickness | 10–40 nm | — |
Thickness | ≥ 1 nm | — |
Duration | 8–12 hours | — |
gaseous hydrogen selenide
H₂Se
CIGS absorber layer
Cu(In,Ga)Se₂
buffer layer
window layer
silicon dioxide layer
SiO₂
barrier layer
molybdenum oxide film
molybdenum nitride film
Mo-containing layer with oxygen and/or nitrogen
molybdenum oxide
molybdenum nitride
Mo-Se layer thickness (claimed range) | 10–40 | MoSe₂ |
Pressure | 2–10 mTorr | — |
Thickness | 5–100 nm | — |
Thickness | 10–100 nm | — |
Duration | 4–12 hours | — |
Thickness | 5–20 nm | — |
Thickness | 10–40 nm | — |
Thickness | ≥ 1 nm | — |
Duration | 8–12 hours | — |
gaseous hydrogen selenide
H₂Se
CIGS absorber layer
Cu(In,Ga)Se₂
buffer layer
window layer
silicon dioxide layer
SiO₂
barrier layer
molybdenum oxide film
molybdenum nitride film
Mo-containing layer with oxygen and/or nitrogen
molybdenum oxide
molybdenum nitride
Mo-Se layer thickness (claimed range) | 10–40 | MoSe₂ |
Pressure | 2–10 mTorr | — |
Thickness | 5–100 nm | — |
Thickness | 10–100 nm | — |
Duration | 4–12 hours | — |
Thickness | 5–20 nm | — |
Thickness | 10–40 nm | — |
Thickness | ≥ 1 nm | — |
Duration | 8–12 hours | — |
gaseous hydrogen selenide
H₂Se
CIGS absorber layer
Cu(In,Ga)Se₂
buffer layer
window layer
silicon dioxide layer
SiO₂
barrier layer
molybdenum oxide film
molybdenum nitride film
Mo-containing layer with oxygen and/or nitrogen
molybdenum oxide
molybdenum nitride
Mo-Se layer thickness (claimed range) | 10–40 | MoSe₂ |
Pressure | 2–10 mTorr | — |
Thickness | 5–100 nm | — |
Thickness | 10–100 nm | — |
Duration | 4–12 hours | — |
Thickness | 5–20 nm | — |
Thickness | 10–40 nm | — |
Thickness | ≥ 1 nm | — |
Duration | 8–12 hours | — |