Patent
US 9,114,998METHODS OF FABRICATING LARGE-AREA, SEMICONDUCTING NANOPERFORATED GRAPHENE MATERIALS
Michael S. Arnold
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,114,998Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. (Left Panel) Schematic depicting the fabrication of nanoperforated H OPG using block copolymer lithography and the corresponding top-down scanning …
FIG. 2. Physical and chemical characterization of nanopatterned H O PG. (a) The histogram and distribution of critical feature dimensions. The hole diameter, …
FIG. 3. Electronic characterization. (a) Schematic of the nanoperforated graphene field effect transistor device. (b) Top-down SEM image of a fabricated device. …
FIG. 4. Top-down SEM image of dewetted P(S-b-MMA) thin film. The random copolymer was formed by direct deposition of P(S-r-MMA-r-GMA) solution on to the surface …
FIG. 5. Large area SEM images of (a) perpendicular PMMA cylinders on a graphene material substrate. (b) Honey comb structures after final short 02 plasma RIE …
FIG. 6. Schematic illustration of the direct transfer of a pattern-forming block copolymer layer onto an underlying graphene substrate. [0018]
FIG. 7. Schematic illustration of the t ri -layered approach to forming nanopatterned graphene, as described in Example 5. [0019]
FIG. 8 SEM images of etch masks comprising pyrene butyric acid SAM wetting layers on graphene (top panels) and nanoperforated graphene layers patterned using …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An etch mask structure for a graphene material, the structure comprising an etch mask disposed over a graphene material, wherein the etch mask comprises a wetting layer in contact with the graphene material, a neutral layer comprising a copolymer disposed over the wetting layer, and a pattern-defining block copolymer layer disposed over the neutral layer, wherein the pattern-defining block copolymer is phase segregated into a pattern of domains; and further wherein the neutral layer is characterized in that is induces the formation of the pattern of domains in the pattern-defining block copolymer.
The structure of claim 1, wherein the wetting layer is a layer of silicon oxide.
The structure of claim 1, wherein the wetting layer comprises a self-assembled monolayer.
The structure of claim 1, wherein the graphene material consists of a single layer of graphene.
The structure of claim 1, wherein the graphene material comprises highly oriented pyrolytic graphite.
Layer stacks claimed or described, ordered top of device to substrate.
etch mask structure for graphene
Materials described outside the worked examples.
graphene
wetting layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. (Left Panel) Schematic depicting the fabrication of nanoperforated H OPG using block copolymer lithography and the corresponding top-down scanning …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electronic band gap of nanoperforated graphene | ≥ 100 meV | nanoperforated graphene |
— | 0–1000 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,114,998Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. (Left Panel) Schematic depicting the fabrication of nanoperforated H OPG using block copolymer lithography and the corresponding top-down scanning …
FIG. 2. Physical and chemical characterization of nanopatterned H O PG. (a) The histogram and distribution of critical feature dimensions. The hole diameter, …
FIG. 3. Electronic characterization. (a) Schematic of the nanoperforated graphene field effect transistor device. (b) Top-down SEM image of a fabricated device. …
FIG. 4. Top-down SEM image of dewetted P(S-b-MMA) thin film. The random copolymer was formed by direct deposition of P(S-r-MMA-r-GMA) solution on to the surface …
FIG. 5. Large area SEM images of (a) perpendicular PMMA cylinders on a graphene material substrate. (b) Honey comb structures after final short 02 plasma RIE …
FIG. 6. Schematic illustration of the direct transfer of a pattern-forming block copolymer layer onto an underlying graphene substrate. [0018]
FIG. 7. Schematic illustration of the t ri -layered approach to forming nanopatterned graphene, as described in Example 5. [0019]
FIG. 8 SEM images of etch masks comprising pyrene butyric acid SAM wetting layers on graphene (top panels) and nanoperforated graphene layers patterned using …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An etch mask structure for a graphene material, the structure comprising an etch mask disposed over a graphene material, wherein the etch mask comprises a wetting layer in contact with the graphene material, a neutral layer comprising a copolymer disposed over the wetting layer, and a pattern-defining block copolymer layer disposed over the neutral layer, wherein the pattern-defining block copolymer is phase segregated into a pattern of domains; and further wherein the neutral layer is characterized in that is induces the formation of the pattern of domains in the pattern-defining block copolymer.
The structure of claim 1, wherein the wetting layer is a layer of silicon oxide.
The structure of claim 1, wherein the wetting layer comprises a self-assembled monolayer.
The structure of claim 1, wherein the graphene material consists of a single layer of graphene.
The structure of claim 1, wherein the graphene material comprises highly oriented pyrolytic graphite.
Layer stacks claimed or described, ordered top of device to substrate.
etch mask structure for graphene
Materials described outside the worked examples.
graphene
wetting layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. (Left Panel) Schematic depicting the fabrication of nanoperforated H OPG using block copolymer lithography and the corresponding top-down scanning …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electronic band gap of nanoperforated graphene | ≥ 100 meV | nanoperforated graphene |
— | 0–1000 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,114,998Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. (Left Panel) Schematic depicting the fabrication of nanoperforated H OPG using block copolymer lithography and the corresponding top-down scanning …
FIG. 2. Physical and chemical characterization of nanopatterned H O PG. (a) The histogram and distribution of critical feature dimensions. The hole diameter, …
FIG. 3. Electronic characterization. (a) Schematic of the nanoperforated graphene field effect transistor device. (b) Top-down SEM image of a fabricated device. …
FIG. 4. Top-down SEM image of dewetted P(S-b-MMA) thin film. The random copolymer was formed by direct deposition of P(S-r-MMA-r-GMA) solution on to the surface …
FIG. 5. Large area SEM images of (a) perpendicular PMMA cylinders on a graphene material substrate. (b) Honey comb structures after final short 02 plasma RIE …
FIG. 6. Schematic illustration of the direct transfer of a pattern-forming block copolymer layer onto an underlying graphene substrate. [0018]
FIG. 7. Schematic illustration of the t ri -layered approach to forming nanopatterned graphene, as described in Example 5. [0019]
FIG. 8 SEM images of etch masks comprising pyrene butyric acid SAM wetting layers on graphene (top panels) and nanoperforated graphene layers patterned using …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An etch mask structure for a graphene material, the structure comprising an etch mask disposed over a graphene material, wherein the etch mask comprises a wetting layer in contact with the graphene material, a neutral layer comprising a copolymer disposed over the wetting layer, and a pattern-defining block copolymer layer disposed over the neutral layer, wherein the pattern-defining block copolymer is phase segregated into a pattern of domains; and further wherein the neutral layer is characterized in that is induces the formation of the pattern of domains in the pattern-defining block copolymer.
The structure of claim 1, wherein the wetting layer is a layer of silicon oxide.
The structure of claim 1, wherein the wetting layer comprises a self-assembled monolayer.
The structure of claim 1, wherein the graphene material consists of a single layer of graphene.
The structure of claim 1, wherein the graphene material comprises highly oriented pyrolytic graphite.
Layer stacks claimed or described, ordered top of device to substrate.
etch mask structure for graphene
Materials described outside the worked examples.
graphene
wetting layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. (Left Panel) Schematic depicting the fabrication of nanoperforated H OPG using block copolymer lithography and the corresponding top-down scanning …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electronic band gap of nanoperforated graphene | ≥ 100 meV | nanoperforated graphene |
— | 0–1000 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,114,998Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. (Left Panel) Schematic depicting the fabrication of nanoperforated H OPG using block copolymer lithography and the corresponding top-down scanning …
FIG. 2. Physical and chemical characterization of nanopatterned H O PG. (a) The histogram and distribution of critical feature dimensions. The hole diameter, …
FIG. 3. Electronic characterization. (a) Schematic of the nanoperforated graphene field effect transistor device. (b) Top-down SEM image of a fabricated device. …
FIG. 4. Top-down SEM image of dewetted P(S-b-MMA) thin film. The random copolymer was formed by direct deposition of P(S-r-MMA-r-GMA) solution on to the surface …
FIG. 5. Large area SEM images of (a) perpendicular PMMA cylinders on a graphene material substrate. (b) Honey comb structures after final short 02 plasma RIE …
FIG. 6. Schematic illustration of the direct transfer of a pattern-forming block copolymer layer onto an underlying graphene substrate. [0018]
FIG. 7. Schematic illustration of the t ri -layered approach to forming nanopatterned graphene, as described in Example 5. [0019]
FIG. 8 SEM images of etch masks comprising pyrene butyric acid SAM wetting layers on graphene (top panels) and nanoperforated graphene layers patterned using …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An etch mask structure for a graphene material, the structure comprising an etch mask disposed over a graphene material, wherein the etch mask comprises a wetting layer in contact with the graphene material, a neutral layer comprising a copolymer disposed over the wetting layer, and a pattern-defining block copolymer layer disposed over the neutral layer, wherein the pattern-defining block copolymer is phase segregated into a pattern of domains; and further wherein the neutral layer is characterized in that is induces the formation of the pattern of domains in the pattern-defining block copolymer.
The structure of claim 1, wherein the wetting layer is a layer of silicon oxide.
The structure of claim 1, wherein the wetting layer comprises a self-assembled monolayer.
The structure of claim 1, wherein the graphene material consists of a single layer of graphene.
The structure of claim 1, wherein the graphene material comprises highly oriented pyrolytic graphite.
Layer stacks claimed or described, ordered top of device to substrate.
etch mask structure for graphene
Materials described outside the worked examples.
graphene
wetting layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. (Left Panel) Schematic depicting the fabrication of nanoperforated H OPG using block copolymer lithography and the corresponding top-down scanning …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electronic band gap of nanoperforated graphene | ≥ 100 meV | nanoperforated graphene |
— | 0–1000 eV |
Related documents with shared materials, methods, properties, or citations.
neutral layer copolymer
pattern-defining block copolymer
silicon oxide
SiOx
P(S-b-MMA)
self-assembled monolayer
pyrene butyric acid
highly oriented pyrolytic graphite
nanoperforated graphene
cylinder-forming diblock copolymer of styrene and methyl methacrylate
carbon disulfide
CS₂
uncrosslinked polystyrene
FIG. 3. Electronic characterization. (a) Schematic of the nanoperforated graphene field effect transistor device. (b) Top-down SEM image of a fabricated device. …
FIG. 3. Electronic characterization. (a) Schematic of the nanoperforated graphene field effect transistor device. (b) Top-down SEM image of a fabricated device. …
FIG. 4. Top-down SEM image of dewetted P(S-b-MMA) thin film. The random copolymer was formed by direct deposition of P(S-r-MMA-r-GMA) solution on to the surface …
FIG. 5. Large area SEM images of (a) perpendicular PMMA cylinders on a graphene material substrate. (b) Honey comb structures after final short 02 plasma RIE …
FIG. 8 SEM images of etch masks comprising pyrene butyric acid SAM wetting layers on graphene (top panels) and nanoperforated graphene layers patterned using …
| — |
Pressure | 0.000001 torr | — |
Thickness | 2600–2700 cm | — |
Thickness | 0148-04 nm | — |
Thickness | ≥ 2000 cm | — |
Voltage | ≥ 30 V | — |
Thickness | 5–20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 30 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≥ 1 mm | — |
Duration | ≥ 8 hours | — |
Duration | ≥ 10 hours | — |
Pressure | 0148-04 pa | — |
neutral layer copolymer
pattern-defining block copolymer
silicon oxide
SiOx
P(S-b-MMA)
self-assembled monolayer
pyrene butyric acid
highly oriented pyrolytic graphite
nanoperforated graphene
cylinder-forming diblock copolymer of styrene and methyl methacrylate
carbon disulfide
CS₂
uncrosslinked polystyrene
FIG. 3. Electronic characterization. (a) Schematic of the nanoperforated graphene field effect transistor device. (b) Top-down SEM image of a fabricated device. …
FIG. 3. Electronic characterization. (a) Schematic of the nanoperforated graphene field effect transistor device. (b) Top-down SEM image of a fabricated device. …
FIG. 4. Top-down SEM image of dewetted P(S-b-MMA) thin film. The random copolymer was formed by direct deposition of P(S-r-MMA-r-GMA) solution on to the surface …
FIG. 5. Large area SEM images of (a) perpendicular PMMA cylinders on a graphene material substrate. (b) Honey comb structures after final short 02 plasma RIE …
FIG. 8 SEM images of etch masks comprising pyrene butyric acid SAM wetting layers on graphene (top panels) and nanoperforated graphene layers patterned using …
| — |
Pressure | 0.000001 torr | — |
Thickness | 2600–2700 cm | — |
Thickness | 0148-04 nm | — |
Thickness | ≥ 2000 cm | — |
Voltage | ≥ 30 V | — |
Thickness | 5–20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 30 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≥ 1 mm | — |
Duration | ≥ 8 hours | — |
Duration | ≥ 10 hours | — |
Pressure | 0148-04 pa | — |
neutral layer copolymer
pattern-defining block copolymer
silicon oxide
SiOx
P(S-b-MMA)
self-assembled monolayer
pyrene butyric acid
highly oriented pyrolytic graphite
nanoperforated graphene
cylinder-forming diblock copolymer of styrene and methyl methacrylate
carbon disulfide
CS₂
uncrosslinked polystyrene
FIG. 3. Electronic characterization. (a) Schematic of the nanoperforated graphene field effect transistor device. (b) Top-down SEM image of a fabricated device. …
FIG. 3. Electronic characterization. (a) Schematic of the nanoperforated graphene field effect transistor device. (b) Top-down SEM image of a fabricated device. …
FIG. 4. Top-down SEM image of dewetted P(S-b-MMA) thin film. The random copolymer was formed by direct deposition of P(S-r-MMA-r-GMA) solution on to the surface …
FIG. 5. Large area SEM images of (a) perpendicular PMMA cylinders on a graphene material substrate. (b) Honey comb structures after final short 02 plasma RIE …
FIG. 8 SEM images of etch masks comprising pyrene butyric acid SAM wetting layers on graphene (top panels) and nanoperforated graphene layers patterned using …
| — |
Pressure | 0.000001 torr | — |
Thickness | 2600–2700 cm | — |
Thickness | 0148-04 nm | — |
Thickness | ≥ 2000 cm | — |
Voltage | ≥ 30 V | — |
Thickness | 5–20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 30 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≥ 1 mm | — |
Duration | ≥ 8 hours | — |
Duration | ≥ 10 hours | — |
Pressure | 0148-04 pa | — |
neutral layer copolymer
pattern-defining block copolymer
silicon oxide
SiOx
P(S-b-MMA)
self-assembled monolayer
pyrene butyric acid
highly oriented pyrolytic graphite
nanoperforated graphene
cylinder-forming diblock copolymer of styrene and methyl methacrylate
carbon disulfide
CS₂
uncrosslinked polystyrene
FIG. 3. Electronic characterization. (a) Schematic of the nanoperforated graphene field effect transistor device. (b) Top-down SEM image of a fabricated device. …
FIG. 3. Electronic characterization. (a) Schematic of the nanoperforated graphene field effect transistor device. (b) Top-down SEM image of a fabricated device. …
FIG. 4. Top-down SEM image of dewetted P(S-b-MMA) thin film. The random copolymer was formed by direct deposition of P(S-r-MMA-r-GMA) solution on to the surface …
FIG. 5. Large area SEM images of (a) perpendicular PMMA cylinders on a graphene material substrate. (b) Honey comb structures after final short 02 plasma RIE …
FIG. 8 SEM images of etch masks comprising pyrene butyric acid SAM wetting layers on graphene (top panels) and nanoperforated graphene layers patterned using …
| — |
Pressure | 0.000001 torr | — |
Thickness | 2600–2700 cm | — |
Thickness | 0148-04 nm | — |
Thickness | ≥ 2000 cm | — |
Voltage | ≥ 30 V | — |
Thickness | 5–20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 30 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≥ 1 mm | — |
Duration | ≥ 8 hours | — |
Duration | ≥ 10 hours | — |
Pressure | 0148-04 pa | — |