Patent
US 10,069,139Patent
Atlas literature
Patent
US 10,069,139Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(A) Flow chart showing preferred routes to prepare graphene doping silicon nano powder.
FIG. 2 Schematic procedure of Silica/Graphene preparation by sol-gel process.
FIG. 3 Schematic procedure of Silica/Graphene/Mg preparation by ball milling
FIG. 4 Schematic of an apparatus that can be used to heat treatment of the green powders in the sixth step (02-Feed chamber; 04- pulse purging; 06-vacuum …
FIG. 5 Selected TEM image of the as-prepared nano silicon powders
FIG. 6 Selected EDS spectra of the as-prepared nano silicon powders.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing graphene-doped silicon nanopowder having a silicon particle size smaller than 100 nm, said method comprising: (a) mixing a graphene material with a silicon precursor and a powder selected from Au, Ag, Ti, Ni, Cu, Al, Co and combinations thereof to form a silicon precursor/metal powder/graphene nano composite, wherein said graphene material is selected from pristine graphene, graphene oxide, reduced graphene oxide, graphene fluoride, graphene bromide, graphene iodide, boron-doped graphene, nitrogen- doped graphene, chemically functionalized graphene, or a combination thereof, wherein pristine graphene is a nonoxidized graphene that is produced without chemical intercalation or oxidation; (b) mixing the silicon precursor/metal powder/graphene nano composite with a quantity of magnesium; (c) converting said silicon precursor/metal powder/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by- products by a chemical or thermal reduction reaction; and (d) removing the reaction by- products from the mixture to obtain said graphene-doped metal-doped silicon nano powder.
The method of claim 1, wherein said graphene material is selected from a single-layer sheet or few-layer platelet of pristine graphene, graphene oxide, reduced graphene oxide, graphene fluoride, graphene bromide, graphene iodide, boron-doped graphene, nitrogen-doped graphene, chemically functionalized graphene, or a combination thereof, wherein few layer is defined as less than 10 layers of graphene planes.
The method of claim 1, wherein said silicon precursor contains tetraethyl orthosilicate (TEOS), sodium silicate, silica, silicon-halogen compound, or a combination thereof, and said reaction by-product contains MgO or a magnesium-halogen compound.
The method of claim 1, wherein said silicon precursor contains silicon fluoride and said reaction by-product contains MgF 2.
The method of claim 1, wherein said step (a) of preparing a silicon precursor/metal powder/graphene nano composite includes dispersing or dissolving a silicon precursor in an acidic graphene solution to form a hybrid suspension, removing a liquid component from said hybrid suspension, and/or chemically or thermally converting said hybrid suspension to form said silicon precursor/metal powder/graphene nano composite.
The method of claim 1, wherein said step (a) of preparing a silicon precursor/metal powder/graphene nano composite includes nucleation and growth of silicon precursor particles on a graphene surface.
The method of claim 1, wherein said step (a) of preparing a silicon precursor/metal powder/graphene nano composite includes (i) dispersing or dissolving a silicon precursor in an acidic graphene solution to form a hybrid suspension, (ii) adding a metal powder (iii) adding an alkaline chemical to said hybrid suspension to form a gel, and (iv) drying the gel to form said silicon precursor/metal powder/graphene nano composite.
The method of claim 1, wherein said step (b) of mixing said silicon precursor/metal powder/graphene nano composite with a quantity of magnesium includes liquid solution mixing, melt mixing, grinding, mechanical milling, air milling, or ball-milling.
The method of claim 1, wherein the step (d) of removing said reaction by-product from the mixture comprises etching the reaction product by an acid solution.
The method of claim 1, further comprising filtration, washing, and/or drying after step (d).
The method of claim 1 further comprising a heating process to purify said graphene-doped metal-doped silicon nano powder or to remove graphene, forming metal-doped silicon nano powder.
The method of claim 1, wherein the step (c) of converting said silicon precursor/metal powder/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by-products is conducted at a temperature between 350 and 1000 0 C under an Ar/H 2 atmosphere.
A method of producing graphene-doped silicon nano powder having a silicon particle size smaller than 100 nm, said method comprising: (a) mixing a graphene material with a chemical precursor of silicon and a chemical precursor of a metal selected from the group Au, Ag, Al, Cu, Ti, Ni, Co, and combinations thereof, to create a silicon precursor/metal precursor/graphene nano composite, wherein said graphene material is selected from pristine graphene, graphene oxide, reduced graphene oxide, graphene fluoride, graphene bromide, graphene iodide, boron-doped graphene, nitrogen-doped graphene, chemically functionalized graphene, or a combination thereof, wherein pristine graphene is a non-oxidized graphene that is produced without chemical intercalation or oxidation; (b) mixing the silicon precursor/metal precursor/graphene nano composite with a quantity of magnesium; (c) converting said silicon precursor/metal precursor/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by-products by a chemical or thermal reduction reaction; and (d) removing the reaction by-products from the mixture to obtain said graphene-doped metal-doped silicon nano powder.
The process of claim 16, wherein said chemical precursor of a metal is selected from the group titanium silicide, copper silicide, aluminum silicide, cobalt silicide, tetrabutyl titanate, nickel silicide, nickel nitrite, high chlorine gold acid, and combinations thereof.
The method of claim 16, wherein said step (a) of preparing said silicon precursor/metal precursor/graphene nano composite includes (i) dispersing or dissolving a silicon precursor and a metal precursor in an acidic graphene solution to form a hybrid suspension, (ii) adding an alkaline chemical to said hybrid suspension to form a gel, and (iii) drying said gel to form said silicon precursor/metal precursor/graphene nano composite.
The method of claim 16, wherein said step (c) of converting said silicon precursor/metal powder/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by-products is conducted at a temperature between 350 and 1000 0 C under an Ar/H 2 atmosphere.
Materials described outside the worked examples.
graphene material
silicon precursor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 Selected TEM image of the as-prepared nano silicon powders
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
silicon particle size (upper bound) | ≤ 1 nm | graphene-doped metal-doped silicon nano powder |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,069,139Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(A) Flow chart showing preferred routes to prepare graphene doping silicon nano powder.
FIG. 2 Schematic procedure of Silica/Graphene preparation by sol-gel process.
FIG. 3 Schematic procedure of Silica/Graphene/Mg preparation by ball milling
FIG. 4 Schematic of an apparatus that can be used to heat treatment of the green powders in the sixth step (02-Feed chamber; 04- pulse purging; 06-vacuum …
FIG. 5 Selected TEM image of the as-prepared nano silicon powders
FIG. 6 Selected EDS spectra of the as-prepared nano silicon powders.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing graphene-doped silicon nanopowder having a silicon particle size smaller than 100 nm, said method comprising: (a) mixing a graphene material with a silicon precursor and a powder selected from Au, Ag, Ti, Ni, Cu, Al, Co and combinations thereof to form a silicon precursor/metal powder/graphene nano composite, wherein said graphene material is selected from pristine graphene, graphene oxide, reduced graphene oxide, graphene fluoride, graphene bromide, graphene iodide, boron-doped graphene, nitrogen- doped graphene, chemically functionalized graphene, or a combination thereof, wherein pristine graphene is a nonoxidized graphene that is produced without chemical intercalation or oxidation; (b) mixing the silicon precursor/metal powder/graphene nano composite with a quantity of magnesium; (c) converting said silicon precursor/metal powder/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by- products by a chemical or thermal reduction reaction; and (d) removing the reaction by- products from the mixture to obtain said graphene-doped metal-doped silicon nano powder.
The method of claim 1, wherein said graphene material is selected from a single-layer sheet or few-layer platelet of pristine graphene, graphene oxide, reduced graphene oxide, graphene fluoride, graphene bromide, graphene iodide, boron-doped graphene, nitrogen-doped graphene, chemically functionalized graphene, or a combination thereof, wherein few layer is defined as less than 10 layers of graphene planes.
The method of claim 1, wherein said silicon precursor contains tetraethyl orthosilicate (TEOS), sodium silicate, silica, silicon-halogen compound, or a combination thereof, and said reaction by-product contains MgO or a magnesium-halogen compound.
The method of claim 1, wherein said silicon precursor contains silicon fluoride and said reaction by-product contains MgF 2.
The method of claim 1, wherein said step (a) of preparing a silicon precursor/metal powder/graphene nano composite includes dispersing or dissolving a silicon precursor in an acidic graphene solution to form a hybrid suspension, removing a liquid component from said hybrid suspension, and/or chemically or thermally converting said hybrid suspension to form said silicon precursor/metal powder/graphene nano composite.
The method of claim 1, wherein said step (a) of preparing a silicon precursor/metal powder/graphene nano composite includes nucleation and growth of silicon precursor particles on a graphene surface.
The method of claim 1, wherein said step (a) of preparing a silicon precursor/metal powder/graphene nano composite includes (i) dispersing or dissolving a silicon precursor in an acidic graphene solution to form a hybrid suspension, (ii) adding a metal powder (iii) adding an alkaline chemical to said hybrid suspension to form a gel, and (iv) drying the gel to form said silicon precursor/metal powder/graphene nano composite.
The method of claim 1, wherein said step (b) of mixing said silicon precursor/metal powder/graphene nano composite with a quantity of magnesium includes liquid solution mixing, melt mixing, grinding, mechanical milling, air milling, or ball-milling.
The method of claim 1, wherein the step (d) of removing said reaction by-product from the mixture comprises etching the reaction product by an acid solution.
The method of claim 1, further comprising filtration, washing, and/or drying after step (d).
The method of claim 1 further comprising a heating process to purify said graphene-doped metal-doped silicon nano powder or to remove graphene, forming metal-doped silicon nano powder.
The method of claim 1, wherein the step (c) of converting said silicon precursor/metal powder/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by-products is conducted at a temperature between 350 and 1000 0 C under an Ar/H 2 atmosphere.
A method of producing graphene-doped silicon nano powder having a silicon particle size smaller than 100 nm, said method comprising: (a) mixing a graphene material with a chemical precursor of silicon and a chemical precursor of a metal selected from the group Au, Ag, Al, Cu, Ti, Ni, Co, and combinations thereof, to create a silicon precursor/metal precursor/graphene nano composite, wherein said graphene material is selected from pristine graphene, graphene oxide, reduced graphene oxide, graphene fluoride, graphene bromide, graphene iodide, boron-doped graphene, nitrogen-doped graphene, chemically functionalized graphene, or a combination thereof, wherein pristine graphene is a non-oxidized graphene that is produced without chemical intercalation or oxidation; (b) mixing the silicon precursor/metal precursor/graphene nano composite with a quantity of magnesium; (c) converting said silicon precursor/metal precursor/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by-products by a chemical or thermal reduction reaction; and (d) removing the reaction by-products from the mixture to obtain said graphene-doped metal-doped silicon nano powder.
The process of claim 16, wherein said chemical precursor of a metal is selected from the group titanium silicide, copper silicide, aluminum silicide, cobalt silicide, tetrabutyl titanate, nickel silicide, nickel nitrite, high chlorine gold acid, and combinations thereof.
The method of claim 16, wherein said step (a) of preparing said silicon precursor/metal precursor/graphene nano composite includes (i) dispersing or dissolving a silicon precursor and a metal precursor in an acidic graphene solution to form a hybrid suspension, (ii) adding an alkaline chemical to said hybrid suspension to form a gel, and (iii) drying said gel to form said silicon precursor/metal precursor/graphene nano composite.
The method of claim 16, wherein said step (c) of converting said silicon precursor/metal powder/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by-products is conducted at a temperature between 350 and 1000 0 C under an Ar/H 2 atmosphere.
Materials described outside the worked examples.
graphene material
silicon precursor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 Selected TEM image of the as-prepared nano silicon powders
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
silicon particle size (upper bound) | ≤ 1 nm | graphene-doped metal-doped silicon nano powder |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,069,139Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(A) Flow chart showing preferred routes to prepare graphene doping silicon nano powder.
FIG. 2 Schematic procedure of Silica/Graphene preparation by sol-gel process.
FIG. 3 Schematic procedure of Silica/Graphene/Mg preparation by ball milling
FIG. 4 Schematic of an apparatus that can be used to heat treatment of the green powders in the sixth step (02-Feed chamber; 04- pulse purging; 06-vacuum …
FIG. 5 Selected TEM image of the as-prepared nano silicon powders
FIG. 6 Selected EDS spectra of the as-prepared nano silicon powders.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing graphene-doped silicon nanopowder having a silicon particle size smaller than 100 nm, said method comprising: (a) mixing a graphene material with a silicon precursor and a powder selected from Au, Ag, Ti, Ni, Cu, Al, Co and combinations thereof to form a silicon precursor/metal powder/graphene nano composite, wherein said graphene material is selected from pristine graphene, graphene oxide, reduced graphene oxide, graphene fluoride, graphene bromide, graphene iodide, boron-doped graphene, nitrogen- doped graphene, chemically functionalized graphene, or a combination thereof, wherein pristine graphene is a nonoxidized graphene that is produced without chemical intercalation or oxidation; (b) mixing the silicon precursor/metal powder/graphene nano composite with a quantity of magnesium; (c) converting said silicon precursor/metal powder/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by- products by a chemical or thermal reduction reaction; and (d) removing the reaction by- products from the mixture to obtain said graphene-doped metal-doped silicon nano powder.
The method of claim 1, wherein said graphene material is selected from a single-layer sheet or few-layer platelet of pristine graphene, graphene oxide, reduced graphene oxide, graphene fluoride, graphene bromide, graphene iodide, boron-doped graphene, nitrogen-doped graphene, chemically functionalized graphene, or a combination thereof, wherein few layer is defined as less than 10 layers of graphene planes.
The method of claim 1, wherein said silicon precursor contains tetraethyl orthosilicate (TEOS), sodium silicate, silica, silicon-halogen compound, or a combination thereof, and said reaction by-product contains MgO or a magnesium-halogen compound.
The method of claim 1, wherein said silicon precursor contains silicon fluoride and said reaction by-product contains MgF 2.
The method of claim 1, wherein said step (a) of preparing a silicon precursor/metal powder/graphene nano composite includes dispersing or dissolving a silicon precursor in an acidic graphene solution to form a hybrid suspension, removing a liquid component from said hybrid suspension, and/or chemically or thermally converting said hybrid suspension to form said silicon precursor/metal powder/graphene nano composite.
The method of claim 1, wherein said step (a) of preparing a silicon precursor/metal powder/graphene nano composite includes nucleation and growth of silicon precursor particles on a graphene surface.
The method of claim 1, wherein said step (a) of preparing a silicon precursor/metal powder/graphene nano composite includes (i) dispersing or dissolving a silicon precursor in an acidic graphene solution to form a hybrid suspension, (ii) adding a metal powder (iii) adding an alkaline chemical to said hybrid suspension to form a gel, and (iv) drying the gel to form said silicon precursor/metal powder/graphene nano composite.
The method of claim 1, wherein said step (b) of mixing said silicon precursor/metal powder/graphene nano composite with a quantity of magnesium includes liquid solution mixing, melt mixing, grinding, mechanical milling, air milling, or ball-milling.
The method of claim 1, wherein the step (d) of removing said reaction by-product from the mixture comprises etching the reaction product by an acid solution.
The method of claim 1, further comprising filtration, washing, and/or drying after step (d).
The method of claim 1 further comprising a heating process to purify said graphene-doped metal-doped silicon nano powder or to remove graphene, forming metal-doped silicon nano powder.
The method of claim 1, wherein the step (c) of converting said silicon precursor/metal powder/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by-products is conducted at a temperature between 350 and 1000 0 C under an Ar/H 2 atmosphere.
A method of producing graphene-doped silicon nano powder having a silicon particle size smaller than 100 nm, said method comprising: (a) mixing a graphene material with a chemical precursor of silicon and a chemical precursor of a metal selected from the group Au, Ag, Al, Cu, Ti, Ni, Co, and combinations thereof, to create a silicon precursor/metal precursor/graphene nano composite, wherein said graphene material is selected from pristine graphene, graphene oxide, reduced graphene oxide, graphene fluoride, graphene bromide, graphene iodide, boron-doped graphene, nitrogen-doped graphene, chemically functionalized graphene, or a combination thereof, wherein pristine graphene is a non-oxidized graphene that is produced without chemical intercalation or oxidation; (b) mixing the silicon precursor/metal precursor/graphene nano composite with a quantity of magnesium; (c) converting said silicon precursor/metal precursor/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by-products by a chemical or thermal reduction reaction; and (d) removing the reaction by-products from the mixture to obtain said graphene-doped metal-doped silicon nano powder.
The process of claim 16, wherein said chemical precursor of a metal is selected from the group titanium silicide, copper silicide, aluminum silicide, cobalt silicide, tetrabutyl titanate, nickel silicide, nickel nitrite, high chlorine gold acid, and combinations thereof.
The method of claim 16, wherein said step (a) of preparing said silicon precursor/metal precursor/graphene nano composite includes (i) dispersing or dissolving a silicon precursor and a metal precursor in an acidic graphene solution to form a hybrid suspension, (ii) adding an alkaline chemical to said hybrid suspension to form a gel, and (iii) drying said gel to form said silicon precursor/metal precursor/graphene nano composite.
The method of claim 16, wherein said step (c) of converting said silicon precursor/metal powder/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by-products is conducted at a temperature between 350 and 1000 0 C under an Ar/H 2 atmosphere.
Materials described outside the worked examples.
graphene material
silicon precursor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 Selected TEM image of the as-prepared nano silicon powders
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
silicon particle size (upper bound) | ≤ 1 nm | graphene-doped metal-doped silicon nano powder |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,069,139Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1(A) Flow chart showing preferred routes to prepare graphene doping silicon nano powder.
FIG. 2 Schematic procedure of Silica/Graphene preparation by sol-gel process.
FIG. 3 Schematic procedure of Silica/Graphene/Mg preparation by ball milling
FIG. 4 Schematic of an apparatus that can be used to heat treatment of the green powders in the sixth step (02-Feed chamber; 04- pulse purging; 06-vacuum …
FIG. 5 Selected TEM image of the as-prepared nano silicon powders
FIG. 6 Selected EDS spectra of the as-prepared nano silicon powders.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing graphene-doped silicon nanopowder having a silicon particle size smaller than 100 nm, said method comprising: (a) mixing a graphene material with a silicon precursor and a powder selected from Au, Ag, Ti, Ni, Cu, Al, Co and combinations thereof to form a silicon precursor/metal powder/graphene nano composite, wherein said graphene material is selected from pristine graphene, graphene oxide, reduced graphene oxide, graphene fluoride, graphene bromide, graphene iodide, boron-doped graphene, nitrogen- doped graphene, chemically functionalized graphene, or a combination thereof, wherein pristine graphene is a nonoxidized graphene that is produced without chemical intercalation or oxidation; (b) mixing the silicon precursor/metal powder/graphene nano composite with a quantity of magnesium; (c) converting said silicon precursor/metal powder/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by- products by a chemical or thermal reduction reaction; and (d) removing the reaction by- products from the mixture to obtain said graphene-doped metal-doped silicon nano powder.
The method of claim 1, wherein said graphene material is selected from a single-layer sheet or few-layer platelet of pristine graphene, graphene oxide, reduced graphene oxide, graphene fluoride, graphene bromide, graphene iodide, boron-doped graphene, nitrogen-doped graphene, chemically functionalized graphene, or a combination thereof, wherein few layer is defined as less than 10 layers of graphene planes.
The method of claim 1, wherein said silicon precursor contains tetraethyl orthosilicate (TEOS), sodium silicate, silica, silicon-halogen compound, or a combination thereof, and said reaction by-product contains MgO or a magnesium-halogen compound.
The method of claim 1, wherein said silicon precursor contains silicon fluoride and said reaction by-product contains MgF 2.
The method of claim 1, wherein said step (a) of preparing a silicon precursor/metal powder/graphene nano composite includes dispersing or dissolving a silicon precursor in an acidic graphene solution to form a hybrid suspension, removing a liquid component from said hybrid suspension, and/or chemically or thermally converting said hybrid suspension to form said silicon precursor/metal powder/graphene nano composite.
The method of claim 1, wherein said step (a) of preparing a silicon precursor/metal powder/graphene nano composite includes nucleation and growth of silicon precursor particles on a graphene surface.
The method of claim 1, wherein said step (a) of preparing a silicon precursor/metal powder/graphene nano composite includes (i) dispersing or dissolving a silicon precursor in an acidic graphene solution to form a hybrid suspension, (ii) adding a metal powder (iii) adding an alkaline chemical to said hybrid suspension to form a gel, and (iv) drying the gel to form said silicon precursor/metal powder/graphene nano composite.
The method of claim 1, wherein said step (b) of mixing said silicon precursor/metal powder/graphene nano composite with a quantity of magnesium includes liquid solution mixing, melt mixing, grinding, mechanical milling, air milling, or ball-milling.
The method of claim 1, wherein the step (d) of removing said reaction by-product from the mixture comprises etching the reaction product by an acid solution.
The method of claim 1, further comprising filtration, washing, and/or drying after step (d).
The method of claim 1 further comprising a heating process to purify said graphene-doped metal-doped silicon nano powder or to remove graphene, forming metal-doped silicon nano powder.
The method of claim 1, wherein the step (c) of converting said silicon precursor/metal powder/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by-products is conducted at a temperature between 350 and 1000 0 C under an Ar/H 2 atmosphere.
A method of producing graphene-doped silicon nano powder having a silicon particle size smaller than 100 nm, said method comprising: (a) mixing a graphene material with a chemical precursor of silicon and a chemical precursor of a metal selected from the group Au, Ag, Al, Cu, Ti, Ni, Co, and combinations thereof, to create a silicon precursor/metal precursor/graphene nano composite, wherein said graphene material is selected from pristine graphene, graphene oxide, reduced graphene oxide, graphene fluoride, graphene bromide, graphene iodide, boron-doped graphene, nitrogen-doped graphene, chemically functionalized graphene, or a combination thereof, wherein pristine graphene is a non-oxidized graphene that is produced without chemical intercalation or oxidation; (b) mixing the silicon precursor/metal precursor/graphene nano composite with a quantity of magnesium; (c) converting said silicon precursor/metal precursor/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by-products by a chemical or thermal reduction reaction; and (d) removing the reaction by-products from the mixture to obtain said graphene-doped metal-doped silicon nano powder.
The process of claim 16, wherein said chemical precursor of a metal is selected from the group titanium silicide, copper silicide, aluminum silicide, cobalt silicide, tetrabutyl titanate, nickel silicide, nickel nitrite, high chlorine gold acid, and combinations thereof.
The method of claim 16, wherein said step (a) of preparing said silicon precursor/metal precursor/graphene nano composite includes (i) dispersing or dissolving a silicon precursor and a metal precursor in an acidic graphene solution to form a hybrid suspension, (ii) adding an alkaline chemical to said hybrid suspension to form a gel, and (iii) drying said gel to form said silicon precursor/metal precursor/graphene nano composite.
The method of claim 16, wherein said step (c) of converting said silicon precursor/metal powder/graphene nano composite to form a mixture of graphene-doped metal-doped silicon and reaction by-products is conducted at a temperature between 350 and 1000 0 C under an Ar/H 2 atmosphere.
Materials described outside the worked examples.
graphene material
silicon precursor
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 Selected TEM image of the as-prepared nano silicon powders
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
silicon particle size (upper bound) | ≤ 1 nm | graphene-doped metal-doped silicon nano powder |
Related documents with shared materials, methods, properties, or citations.
magnesium
Mg
silicon precursor (TEOS, sodium silicate, silica, silicon-halogen compound)
reaction by-product (MgO or magnesium-halogen compound)
silicon fluoride
magnesium fluoride
MgF₂
metal-doped silicon nano powder
graphene-doped metal-doped silicon nanowire
chemical precursor of a metal (titanium silicide, copper silicide, aluminum silicide, cobalt silicide, tetrabutyl titanate, nickel silicide, nickel nitrite, high chlorine gold acid)
graphene-doped metal-doped silicon nano powder
| 8–48 hours |
| — |
Duration | 1–10 hours | — |
Thickness | 5–40 nm | — |
Thickness | 10–20 nm | — |
Thickness | 20–50 nm | — |
Thickness | 50–100 nm | — |
Thickness | 100–300 nm | — |
Thickness | ≤ 1 nm | — |
magnesium
Mg
silicon precursor (TEOS, sodium silicate, silica, silicon-halogen compound)
reaction by-product (MgO or magnesium-halogen compound)
silicon fluoride
magnesium fluoride
MgF₂
metal-doped silicon nano powder
graphene-doped metal-doped silicon nanowire
chemical precursor of a metal (titanium silicide, copper silicide, aluminum silicide, cobalt silicide, tetrabutyl titanate, nickel silicide, nickel nitrite, high chlorine gold acid)
graphene-doped metal-doped silicon nano powder
| 8–48 hours |
| — |
Duration | 1–10 hours | — |
Thickness | 5–40 nm | — |
Thickness | 10–20 nm | — |
Thickness | 20–50 nm | — |
Thickness | 50–100 nm | — |
Thickness | 100–300 nm | — |
Thickness | ≤ 1 nm | — |
magnesium
Mg
silicon precursor (TEOS, sodium silicate, silica, silicon-halogen compound)
reaction by-product (MgO or magnesium-halogen compound)
silicon fluoride
magnesium fluoride
MgF₂
metal-doped silicon nano powder
graphene-doped metal-doped silicon nanowire
chemical precursor of a metal (titanium silicide, copper silicide, aluminum silicide, cobalt silicide, tetrabutyl titanate, nickel silicide, nickel nitrite, high chlorine gold acid)
graphene-doped metal-doped silicon nano powder
| 8–48 hours |
| — |
Duration | 1–10 hours | — |
Thickness | 5–40 nm | — |
Thickness | 10–20 nm | — |
Thickness | 20–50 nm | — |
Thickness | 50–100 nm | — |
Thickness | 100–300 nm | — |
Thickness | ≤ 1 nm | — |
magnesium
Mg
silicon precursor (TEOS, sodium silicate, silica, silicon-halogen compound)
reaction by-product (MgO or magnesium-halogen compound)
silicon fluoride
magnesium fluoride
MgF₂
metal-doped silicon nano powder
graphene-doped metal-doped silicon nanowire
chemical precursor of a metal (titanium silicide, copper silicide, aluminum silicide, cobalt silicide, tetrabutyl titanate, nickel silicide, nickel nitrite, high chlorine gold acid)
graphene-doped metal-doped silicon nano powder
| 8–48 hours |
| — |
Duration | 1–10 hours | — |
Thickness | 5–40 nm | — |
Thickness | 10–20 nm | — |
Thickness | 20–50 nm | — |
Thickness | 50–100 nm | — |
Thickness | 100–300 nm | — |
Thickness | ≤ 1 nm | — |
