Patent
US 8,846,502METHODS FOR DEPOSITING THIN FILMS COMPRISING GALLIUM NITRIDE BY ATOMIC LAYER DEPOSITION
Suvi Haukka
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,846,502Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart generally illustrating a method for forming a GaN film in accordance with one embodiment. The substrate is contacted with a Ga precursor …
FIG. 2B is a graph showing In/(In+Ga) ratio versus InN/(InN+GaN) cycle ratio in accordance with one embodiment; [0014]
FIG. 3A is a graph showing the thickness of deposited InGaN films versus hydrogen/nitrogen ratio in accordance with one embodiment; [0015]
FIG. 4A is a graph showing the thickness of deposited InGaN films versus plasma power in accordance with one embodiment; [0018]
FIG. 5 is a graph showing the growth rate per cycle versus gallium reactant supply as represented by turns of the valve supplying the gallium reactant in …
FIG. 6A is a glancing incidence x-ray diffraction (GIXRD) graph of a InGaN film deposited on sapphire in accordance with one embodiment; [0022]
FIG. 7 is an x-ray diffraction graph of a InGaN film deposited on sapphire heat treated at various temperatures in accordance with one embodiment; DETAILED …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for depositing a thin film comprising GaN on a substrate in a reaction space by an atomic layer deposition process comprising a plurality of deposition cycles, each deposition cycle comprising: contacting the substrate with a Ga precursor such that no more than a single monolayer of the Ga precursor adsorbs on the substrate surface in a self-limiting manner; and contacting the substrate with a nitrogen precursor, such that the nitrogen precursor reacts with the adsorbed Ga precursor to form GaN, wherein the reaction space is part of a flow-type reactor.
The method of claim 1, wherein the deposited film is epitaxial or single-crystal film.
The method of claim 1, wherein the GaN is deposited at a growth rate of less than 1.5 A/deposition cycle.
The method of claim 1, wherein the GaN is deposited at a growth rate of less than 0.3 A/deposition cycle.
The method of claim 1, wherein the deposition cycle additionally comprises contacting the substrate with a plasma pulse to provide heat for crystallization.
The method of claim 1, wherein the Ga precursor is an organic Ga compound.
The method of claim 1, wherein the Ga precursor is a Ga halide.
The method of claim 1, wherein the nitrogen precursor does not comprise an activated compound.
The method of claim 1, wherein the nitrogen precursor comprises nitrogen plasma.
The method of Claim 1, wherein the nitrogen precursor is selected from N H₃ and N₂H4.
An atomic layer deposition (ALD) process for forming a GaN containing thin film on a substrate in a reaction chamber comprising a plurality of deposition cycles, each cycle comprising: -26- providing a pulse of a first vapor phase Ga halide reactant into the reaction chamber to form no more than about a single molecular layer of the first reactant on the substrate; removing excess first reactant from the reaction chamber; providing a pulse of a second vapor phase nitrogen reactant to the reaction chamber such that the second vapor phase reactant reacts with the first reactant on the substrate to form a GaN containing thin film, and removing excess second reactant and reaction byproducts, if any, from the reaction chamber.
The method of claim 11, wherein the Ga halide reactant is GaC l 3, GaCl, or GaI3.
The method of claim 11, wherein the nitrogen reactant is N H 3 or N₂H4.
The method of claim 11, wherein the GaN thin film is deposited at a temperature below 700 0C.
The method of claim 11, wherein the reaction chamber is part of a flow-type reactor.
The method of claim 11, wherein the deposited GaN film is epitaxial or single- crystal film.
The method of Claim 11, wherein the nitrogen reactant comprises nitrogen plasma.
The method of claim 11, wherein the reaction chamber is part of a flow-type reactor.
-27- 24. The method of claim 11, wherein the deposited GaN film is epitaxial or single- crystal film.
An atomic layer deposition (ALD) process for forming a GaN containing thin film on a substrate in a reaction chamber comprising a plurality of deposition cycles, each cycle comprising: providing a pulse of a first organic Ga precursor into the reaction chamber to form no more than about a single molecular layer of the first reactant on the substrate; removing excess first reactant from the reaction chamber; providing a pulse of a second reactant vapor phase nitrogen reactant to the reaction chamber such that the second reactant reacts with the first reactant on the substrate to form a GaN containing thin film, and removing excess second reactant and reaction byproducts, if any, from the reaction chamber.
The method of claim 25, wherein the organic Ga precursor is trimethylgallium (TMG) or triethylgallium (TEG).
The method of claim 25, wherein the organic Ga precursor has a formula GaR3, wherein the R is selected from substituted, branched, linear or cyclic C 1-C₁₀ hydrocarbons.
The method of claim 25, wherein the second reactant comprises N plasma.
The method of claim 25, wherein the nitrogen reactant is N H 3 or N₂H4.
The method of claim 25, wherein the GaN thin film is deposited at a temperature below 400 °C.
The method of claim 25, wherein the GaN thin film is deposited at a temperature below 200 °C.
The method of claim 25, wherein the reaction chamber is part of a flow-type reactor.
-28- 34. A method for depositing a thin film comprising InGaN on a substrate in a reaction space by an atomic layer deposition process comprising a plurality of first deposition cycles for depositing GaN and a plurality of second deposition cycles for depositing InN, each GaN deposition cycle comprising: conacting the substrate with a Ga precursor such that no more than a single monolayer of the Ga precursor adsorbs on the substrate surface in a self-limiting manner; and contacting the substrate with a nitrogen precursor, such that the nitrogen precursor reacts with the adsorbed Ga precursor to form GaN, wherein the reaction space is part of a flow-type reactor, and each InN deposition cycle comprising: contacting the substrate with a In precursor such that no more than a single monolayer of the In precursor adsorbs on the substrate surface in a self-limiting manner; and contacting the substrate with a nitrogen precursor, such that the nitrogen precursor reacts with the adsorbed In precursor to form InN, wherein the reaction space is part of a flow-type reactor.
The method of claim 34, wherein the InGaN film is an epitaxial or single- crystal film.
Materials described outside the worked examples.
GaN
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Glancing incidence x-ray diffraction (GIXRD) graphs of InGaN and GaN films deposited on sapphire (FIG. 6A, 6B, 6C)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–2 seconds | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,846,502Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart generally illustrating a method for forming a GaN film in accordance with one embodiment. The substrate is contacted with a Ga precursor …
FIG. 2B is a graph showing In/(In+Ga) ratio versus InN/(InN+GaN) cycle ratio in accordance with one embodiment; [0014]
FIG. 3A is a graph showing the thickness of deposited InGaN films versus hydrogen/nitrogen ratio in accordance with one embodiment; [0015]
FIG. 4A is a graph showing the thickness of deposited InGaN films versus plasma power in accordance with one embodiment; [0018]
FIG. 5 is a graph showing the growth rate per cycle versus gallium reactant supply as represented by turns of the valve supplying the gallium reactant in …
FIG. 6A is a glancing incidence x-ray diffraction (GIXRD) graph of a InGaN film deposited on sapphire in accordance with one embodiment; [0022]
FIG. 7 is an x-ray diffraction graph of a InGaN film deposited on sapphire heat treated at various temperatures in accordance with one embodiment; DETAILED …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for depositing a thin film comprising GaN on a substrate in a reaction space by an atomic layer deposition process comprising a plurality of deposition cycles, each deposition cycle comprising: contacting the substrate with a Ga precursor such that no more than a single monolayer of the Ga precursor adsorbs on the substrate surface in a self-limiting manner; and contacting the substrate with a nitrogen precursor, such that the nitrogen precursor reacts with the adsorbed Ga precursor to form GaN, wherein the reaction space is part of a flow-type reactor.
The method of claim 1, wherein the deposited film is epitaxial or single-crystal film.
The method of claim 1, wherein the GaN is deposited at a growth rate of less than 1.5 A/deposition cycle.
The method of claim 1, wherein the GaN is deposited at a growth rate of less than 0.3 A/deposition cycle.
The method of claim 1, wherein the deposition cycle additionally comprises contacting the substrate with a plasma pulse to provide heat for crystallization.
The method of claim 1, wherein the Ga precursor is an organic Ga compound.
The method of claim 1, wherein the Ga precursor is a Ga halide.
The method of claim 1, wherein the nitrogen precursor does not comprise an activated compound.
The method of claim 1, wherein the nitrogen precursor comprises nitrogen plasma.
The method of Claim 1, wherein the nitrogen precursor is selected from N H₃ and N₂H4.
An atomic layer deposition (ALD) process for forming a GaN containing thin film on a substrate in a reaction chamber comprising a plurality of deposition cycles, each cycle comprising: -26- providing a pulse of a first vapor phase Ga halide reactant into the reaction chamber to form no more than about a single molecular layer of the first reactant on the substrate; removing excess first reactant from the reaction chamber; providing a pulse of a second vapor phase nitrogen reactant to the reaction chamber such that the second vapor phase reactant reacts with the first reactant on the substrate to form a GaN containing thin film, and removing excess second reactant and reaction byproducts, if any, from the reaction chamber.
The method of claim 11, wherein the Ga halide reactant is GaC l 3, GaCl, or GaI3.
The method of claim 11, wherein the nitrogen reactant is N H 3 or N₂H4.
The method of claim 11, wherein the GaN thin film is deposited at a temperature below 700 0C.
The method of claim 11, wherein the reaction chamber is part of a flow-type reactor.
The method of claim 11, wherein the deposited GaN film is epitaxial or single- crystal film.
The method of Claim 11, wherein the nitrogen reactant comprises nitrogen plasma.
The method of claim 11, wherein the reaction chamber is part of a flow-type reactor.
-27- 24. The method of claim 11, wherein the deposited GaN film is epitaxial or single- crystal film.
An atomic layer deposition (ALD) process for forming a GaN containing thin film on a substrate in a reaction chamber comprising a plurality of deposition cycles, each cycle comprising: providing a pulse of a first organic Ga precursor into the reaction chamber to form no more than about a single molecular layer of the first reactant on the substrate; removing excess first reactant from the reaction chamber; providing a pulse of a second reactant vapor phase nitrogen reactant to the reaction chamber such that the second reactant reacts with the first reactant on the substrate to form a GaN containing thin film, and removing excess second reactant and reaction byproducts, if any, from the reaction chamber.
The method of claim 25, wherein the organic Ga precursor is trimethylgallium (TMG) or triethylgallium (TEG).
The method of claim 25, wherein the organic Ga precursor has a formula GaR3, wherein the R is selected from substituted, branched, linear or cyclic C 1-C₁₀ hydrocarbons.
The method of claim 25, wherein the second reactant comprises N plasma.
The method of claim 25, wherein the nitrogen reactant is N H 3 or N₂H4.
The method of claim 25, wherein the GaN thin film is deposited at a temperature below 400 °C.
The method of claim 25, wherein the GaN thin film is deposited at a temperature below 200 °C.
The method of claim 25, wherein the reaction chamber is part of a flow-type reactor.
-28- 34. A method for depositing a thin film comprising InGaN on a substrate in a reaction space by an atomic layer deposition process comprising a plurality of first deposition cycles for depositing GaN and a plurality of second deposition cycles for depositing InN, each GaN deposition cycle comprising: conacting the substrate with a Ga precursor such that no more than a single monolayer of the Ga precursor adsorbs on the substrate surface in a self-limiting manner; and contacting the substrate with a nitrogen precursor, such that the nitrogen precursor reacts with the adsorbed Ga precursor to form GaN, wherein the reaction space is part of a flow-type reactor, and each InN deposition cycle comprising: contacting the substrate with a In precursor such that no more than a single monolayer of the In precursor adsorbs on the substrate surface in a self-limiting manner; and contacting the substrate with a nitrogen precursor, such that the nitrogen precursor reacts with the adsorbed In precursor to form InN, wherein the reaction space is part of a flow-type reactor.
The method of claim 34, wherein the InGaN film is an epitaxial or single- crystal film.
Materials described outside the worked examples.
GaN
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Glancing incidence x-ray diffraction (GIXRD) graphs of InGaN and GaN films deposited on sapphire (FIG. 6A, 6B, 6C)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–2 seconds | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,846,502Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart generally illustrating a method for forming a GaN film in accordance with one embodiment. The substrate is contacted with a Ga precursor …
FIG. 2B is a graph showing In/(In+Ga) ratio versus InN/(InN+GaN) cycle ratio in accordance with one embodiment; [0014]
FIG. 3A is a graph showing the thickness of deposited InGaN films versus hydrogen/nitrogen ratio in accordance with one embodiment; [0015]
FIG. 4A is a graph showing the thickness of deposited InGaN films versus plasma power in accordance with one embodiment; [0018]
FIG. 5 is a graph showing the growth rate per cycle versus gallium reactant supply as represented by turns of the valve supplying the gallium reactant in …
FIG. 6A is a glancing incidence x-ray diffraction (GIXRD) graph of a InGaN film deposited on sapphire in accordance with one embodiment; [0022]
FIG. 7 is an x-ray diffraction graph of a InGaN film deposited on sapphire heat treated at various temperatures in accordance with one embodiment; DETAILED …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for depositing a thin film comprising GaN on a substrate in a reaction space by an atomic layer deposition process comprising a plurality of deposition cycles, each deposition cycle comprising: contacting the substrate with a Ga precursor such that no more than a single monolayer of the Ga precursor adsorbs on the substrate surface in a self-limiting manner; and contacting the substrate with a nitrogen precursor, such that the nitrogen precursor reacts with the adsorbed Ga precursor to form GaN, wherein the reaction space is part of a flow-type reactor.
The method of claim 1, wherein the deposited film is epitaxial or single-crystal film.
The method of claim 1, wherein the GaN is deposited at a growth rate of less than 1.5 A/deposition cycle.
The method of claim 1, wherein the GaN is deposited at a growth rate of less than 0.3 A/deposition cycle.
The method of claim 1, wherein the deposition cycle additionally comprises contacting the substrate with a plasma pulse to provide heat for crystallization.
The method of claim 1, wherein the Ga precursor is an organic Ga compound.
The method of claim 1, wherein the Ga precursor is a Ga halide.
The method of claim 1, wherein the nitrogen precursor does not comprise an activated compound.
The method of claim 1, wherein the nitrogen precursor comprises nitrogen plasma.
The method of Claim 1, wherein the nitrogen precursor is selected from N H₃ and N₂H4.
An atomic layer deposition (ALD) process for forming a GaN containing thin film on a substrate in a reaction chamber comprising a plurality of deposition cycles, each cycle comprising: -26- providing a pulse of a first vapor phase Ga halide reactant into the reaction chamber to form no more than about a single molecular layer of the first reactant on the substrate; removing excess first reactant from the reaction chamber; providing a pulse of a second vapor phase nitrogen reactant to the reaction chamber such that the second vapor phase reactant reacts with the first reactant on the substrate to form a GaN containing thin film, and removing excess second reactant and reaction byproducts, if any, from the reaction chamber.
The method of claim 11, wherein the Ga halide reactant is GaC l 3, GaCl, or GaI3.
The method of claim 11, wherein the nitrogen reactant is N H 3 or N₂H4.
The method of claim 11, wherein the GaN thin film is deposited at a temperature below 700 0C.
The method of claim 11, wherein the reaction chamber is part of a flow-type reactor.
The method of claim 11, wherein the deposited GaN film is epitaxial or single- crystal film.
The method of Claim 11, wherein the nitrogen reactant comprises nitrogen plasma.
The method of claim 11, wherein the reaction chamber is part of a flow-type reactor.
-27- 24. The method of claim 11, wherein the deposited GaN film is epitaxial or single- crystal film.
An atomic layer deposition (ALD) process for forming a GaN containing thin film on a substrate in a reaction chamber comprising a plurality of deposition cycles, each cycle comprising: providing a pulse of a first organic Ga precursor into the reaction chamber to form no more than about a single molecular layer of the first reactant on the substrate; removing excess first reactant from the reaction chamber; providing a pulse of a second reactant vapor phase nitrogen reactant to the reaction chamber such that the second reactant reacts with the first reactant on the substrate to form a GaN containing thin film, and removing excess second reactant and reaction byproducts, if any, from the reaction chamber.
The method of claim 25, wherein the organic Ga precursor is trimethylgallium (TMG) or triethylgallium (TEG).
The method of claim 25, wherein the organic Ga precursor has a formula GaR3, wherein the R is selected from substituted, branched, linear or cyclic C 1-C₁₀ hydrocarbons.
The method of claim 25, wherein the second reactant comprises N plasma.
The method of claim 25, wherein the nitrogen reactant is N H 3 or N₂H4.
The method of claim 25, wherein the GaN thin film is deposited at a temperature below 400 °C.
The method of claim 25, wherein the GaN thin film is deposited at a temperature below 200 °C.
The method of claim 25, wherein the reaction chamber is part of a flow-type reactor.
-28- 34. A method for depositing a thin film comprising InGaN on a substrate in a reaction space by an atomic layer deposition process comprising a plurality of first deposition cycles for depositing GaN and a plurality of second deposition cycles for depositing InN, each GaN deposition cycle comprising: conacting the substrate with a Ga precursor such that no more than a single monolayer of the Ga precursor adsorbs on the substrate surface in a self-limiting manner; and contacting the substrate with a nitrogen precursor, such that the nitrogen precursor reacts with the adsorbed Ga precursor to form GaN, wherein the reaction space is part of a flow-type reactor, and each InN deposition cycle comprising: contacting the substrate with a In precursor such that no more than a single monolayer of the In precursor adsorbs on the substrate surface in a self-limiting manner; and contacting the substrate with a nitrogen precursor, such that the nitrogen precursor reacts with the adsorbed In precursor to form InN, wherein the reaction space is part of a flow-type reactor.
The method of claim 34, wherein the InGaN film is an epitaxial or single- crystal film.
Materials described outside the worked examples.
GaN
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Glancing incidence x-ray diffraction (GIXRD) graphs of InGaN and GaN films deposited on sapphire (FIG. 6A, 6B, 6C)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–2 seconds | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,846,502Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart generally illustrating a method for forming a GaN film in accordance with one embodiment. The substrate is contacted with a Ga precursor …
FIG. 2B is a graph showing In/(In+Ga) ratio versus InN/(InN+GaN) cycle ratio in accordance with one embodiment; [0014]
FIG. 3A is a graph showing the thickness of deposited InGaN films versus hydrogen/nitrogen ratio in accordance with one embodiment; [0015]
FIG. 4A is a graph showing the thickness of deposited InGaN films versus plasma power in accordance with one embodiment; [0018]
FIG. 5 is a graph showing the growth rate per cycle versus gallium reactant supply as represented by turns of the valve supplying the gallium reactant in …
FIG. 6A is a glancing incidence x-ray diffraction (GIXRD) graph of a InGaN film deposited on sapphire in accordance with one embodiment; [0022]
FIG. 7 is an x-ray diffraction graph of a InGaN film deposited on sapphire heat treated at various temperatures in accordance with one embodiment; DETAILED …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for depositing a thin film comprising GaN on a substrate in a reaction space by an atomic layer deposition process comprising a plurality of deposition cycles, each deposition cycle comprising: contacting the substrate with a Ga precursor such that no more than a single monolayer of the Ga precursor adsorbs on the substrate surface in a self-limiting manner; and contacting the substrate with a nitrogen precursor, such that the nitrogen precursor reacts with the adsorbed Ga precursor to form GaN, wherein the reaction space is part of a flow-type reactor.
The method of claim 1, wherein the deposited film is epitaxial or single-crystal film.
The method of claim 1, wherein the GaN is deposited at a growth rate of less than 1.5 A/deposition cycle.
The method of claim 1, wherein the GaN is deposited at a growth rate of less than 0.3 A/deposition cycle.
The method of claim 1, wherein the deposition cycle additionally comprises contacting the substrate with a plasma pulse to provide heat for crystallization.
The method of claim 1, wherein the Ga precursor is an organic Ga compound.
The method of claim 1, wherein the Ga precursor is a Ga halide.
The method of claim 1, wherein the nitrogen precursor does not comprise an activated compound.
The method of claim 1, wherein the nitrogen precursor comprises nitrogen plasma.
The method of Claim 1, wherein the nitrogen precursor is selected from N H₃ and N₂H4.
An atomic layer deposition (ALD) process for forming a GaN containing thin film on a substrate in a reaction chamber comprising a plurality of deposition cycles, each cycle comprising: -26- providing a pulse of a first vapor phase Ga halide reactant into the reaction chamber to form no more than about a single molecular layer of the first reactant on the substrate; removing excess first reactant from the reaction chamber; providing a pulse of a second vapor phase nitrogen reactant to the reaction chamber such that the second vapor phase reactant reacts with the first reactant on the substrate to form a GaN containing thin film, and removing excess second reactant and reaction byproducts, if any, from the reaction chamber.
The method of claim 11, wherein the Ga halide reactant is GaC l 3, GaCl, or GaI3.
The method of claim 11, wherein the nitrogen reactant is N H 3 or N₂H4.
The method of claim 11, wherein the GaN thin film is deposited at a temperature below 700 0C.
The method of claim 11, wherein the reaction chamber is part of a flow-type reactor.
The method of claim 11, wherein the deposited GaN film is epitaxial or single- crystal film.
The method of Claim 11, wherein the nitrogen reactant comprises nitrogen plasma.
The method of claim 11, wherein the reaction chamber is part of a flow-type reactor.
-27- 24. The method of claim 11, wherein the deposited GaN film is epitaxial or single- crystal film.
An atomic layer deposition (ALD) process for forming a GaN containing thin film on a substrate in a reaction chamber comprising a plurality of deposition cycles, each cycle comprising: providing a pulse of a first organic Ga precursor into the reaction chamber to form no more than about a single molecular layer of the first reactant on the substrate; removing excess first reactant from the reaction chamber; providing a pulse of a second reactant vapor phase nitrogen reactant to the reaction chamber such that the second reactant reacts with the first reactant on the substrate to form a GaN containing thin film, and removing excess second reactant and reaction byproducts, if any, from the reaction chamber.
The method of claim 25, wherein the organic Ga precursor is trimethylgallium (TMG) or triethylgallium (TEG).
The method of claim 25, wherein the organic Ga precursor has a formula GaR3, wherein the R is selected from substituted, branched, linear or cyclic C 1-C₁₀ hydrocarbons.
The method of claim 25, wherein the second reactant comprises N plasma.
The method of claim 25, wherein the nitrogen reactant is N H 3 or N₂H4.
The method of claim 25, wherein the GaN thin film is deposited at a temperature below 400 °C.
The method of claim 25, wherein the GaN thin film is deposited at a temperature below 200 °C.
The method of claim 25, wherein the reaction chamber is part of a flow-type reactor.
-28- 34. A method for depositing a thin film comprising InGaN on a substrate in a reaction space by an atomic layer deposition process comprising a plurality of first deposition cycles for depositing GaN and a plurality of second deposition cycles for depositing InN, each GaN deposition cycle comprising: conacting the substrate with a Ga precursor such that no more than a single monolayer of the Ga precursor adsorbs on the substrate surface in a self-limiting manner; and contacting the substrate with a nitrogen precursor, such that the nitrogen precursor reacts with the adsorbed Ga precursor to form GaN, wherein the reaction space is part of a flow-type reactor, and each InN deposition cycle comprising: contacting the substrate with a In precursor such that no more than a single monolayer of the In precursor adsorbs on the substrate surface in a self-limiting manner; and contacting the substrate with a nitrogen precursor, such that the nitrogen precursor reacts with the adsorbed In precursor to form InN, wherein the reaction space is part of a flow-type reactor.
The method of claim 34, wherein the InGaN film is an epitaxial or single- crystal film.
Materials described outside the worked examples.
GaN
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Glancing incidence x-ray diffraction (GIXRD) graphs of InGaN and GaN films deposited on sapphire (FIG. 6A, 6B, 6C)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 1–2 seconds | — |
Temperature |
Related documents with shared materials, methods, properties, or citations.
organic Ga compound
Ga halide
gallium trichloride
GaCl₃
gallium triiodide
GaI₃
ammonia
NH₃
hydrazine
N₂H₄
trimethylgallium
Ga(CH₃)3
triethylgallium
Ga(C₂H₅)3
InN
nitrogen plasma
H₂/N₂ plasma
X-ray diffraction graph of InGaN film deposited on sapphire heat treated at various temperatures (FIG. 7)
| — |
Temperature | 180–220 °C | — |
Duration | 0.05–10 seconds | — |
Duration | 0.05–20 seconds | — |
Pressure | 0.1–10 torr | — |
Pressure | 0.5–5 torr | — |
Pressure | 1–4 torr | — |
Pressure | 700–800 torr | — |
Temperature | ≤ 800 °C | — |
Thickness | ≤ 2 Å | — |
Thickness | ≤ 1.5 Å | — |
Thickness | ≤ 1 Å | — |
Thickness | ≤ 0.5 Å | — |
Thickness | ≤ 0.3 Å | — |
Temperature | ≤ 120 °C | — |
Temperature | ≤ 700 °C | — |
Temperature | ≤ 600 °C | — |
Temperature | ≤ 550 °C | — |
Temperature | ≤ 500 °C | — |
Temperature | ≤ 400 °C | — |
Temperature | ≤ 300 °C | — |
Temperature | ≤ 200 °C | — |
Thickness | ≤ 4 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 1.5 nm | — |
— | ≥ 200 W | — |
— | ≥ 300 W | — |
— | ≥ 400 W | — |
organic Ga compound
Ga halide
gallium trichloride
GaCl₃
gallium triiodide
GaI₃
ammonia
NH₃
hydrazine
N₂H₄
trimethylgallium
Ga(CH₃)3
triethylgallium
Ga(C₂H₅)3
InN
nitrogen plasma
H₂/N₂ plasma
X-ray diffraction graph of InGaN film deposited on sapphire heat treated at various temperatures (FIG. 7)
| — |
Temperature | 180–220 °C | — |
Duration | 0.05–10 seconds | — |
Duration | 0.05–20 seconds | — |
Pressure | 0.1–10 torr | — |
Pressure | 0.5–5 torr | — |
Pressure | 1–4 torr | — |
Pressure | 700–800 torr | — |
Temperature | ≤ 800 °C | — |
Thickness | ≤ 2 Å | — |
Thickness | ≤ 1.5 Å | — |
Thickness | ≤ 1 Å | — |
Thickness | ≤ 0.5 Å | — |
Thickness | ≤ 0.3 Å | — |
Temperature | ≤ 120 °C | — |
Temperature | ≤ 700 °C | — |
Temperature | ≤ 600 °C | — |
Temperature | ≤ 550 °C | — |
Temperature | ≤ 500 °C | — |
Temperature | ≤ 400 °C | — |
Temperature | ≤ 300 °C | — |
Temperature | ≤ 200 °C | — |
Thickness | ≤ 4 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 1.5 nm | — |
— | ≥ 200 W | — |
— | ≥ 300 W | — |
— | ≥ 400 W | — |
organic Ga compound
Ga halide
gallium trichloride
GaCl₃
gallium triiodide
GaI₃
ammonia
NH₃
hydrazine
N₂H₄
trimethylgallium
Ga(CH₃)3
triethylgallium
Ga(C₂H₅)3
InN
nitrogen plasma
H₂/N₂ plasma
X-ray diffraction graph of InGaN film deposited on sapphire heat treated at various temperatures (FIG. 7)
| — |
Temperature | 180–220 °C | — |
Duration | 0.05–10 seconds | — |
Duration | 0.05–20 seconds | — |
Pressure | 0.1–10 torr | — |
Pressure | 0.5–5 torr | — |
Pressure | 1–4 torr | — |
Pressure | 700–800 torr | — |
Temperature | ≤ 800 °C | — |
Thickness | ≤ 2 Å | — |
Thickness | ≤ 1.5 Å | — |
Thickness | ≤ 1 Å | — |
Thickness | ≤ 0.5 Å | — |
Thickness | ≤ 0.3 Å | — |
Temperature | ≤ 120 °C | — |
Temperature | ≤ 700 °C | — |
Temperature | ≤ 600 °C | — |
Temperature | ≤ 550 °C | — |
Temperature | ≤ 500 °C | — |
Temperature | ≤ 400 °C | — |
Temperature | ≤ 300 °C | — |
Temperature | ≤ 200 °C | — |
Thickness | ≤ 4 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 1.5 nm | — |
— | ≥ 200 W | — |
— | ≥ 300 W | — |
— | ≥ 400 W | — |
organic Ga compound
Ga halide
gallium trichloride
GaCl₃
gallium triiodide
GaI₃
ammonia
NH₃
hydrazine
N₂H₄
trimethylgallium
Ga(CH₃)3
triethylgallium
Ga(C₂H₅)3
InN
nitrogen plasma
H₂/N₂ plasma
X-ray diffraction graph of InGaN film deposited on sapphire heat treated at various temperatures (FIG. 7)
| — |
Temperature | 180–220 °C | — |
Duration | 0.05–10 seconds | — |
Duration | 0.05–20 seconds | — |
Pressure | 0.1–10 torr | — |
Pressure | 0.5–5 torr | — |
Pressure | 1–4 torr | — |
Pressure | 700–800 torr | — |
Temperature | ≤ 800 °C | — |
Thickness | ≤ 2 Å | — |
Thickness | ≤ 1.5 Å | — |
Thickness | ≤ 1 Å | — |
Thickness | ≤ 0.5 Å | — |
Thickness | ≤ 0.3 Å | — |
Temperature | ≤ 120 °C | — |
Temperature | ≤ 700 °C | — |
Temperature | ≤ 600 °C | — |
Temperature | ≤ 550 °C | — |
Temperature | ≤ 500 °C | — |
Temperature | ≤ 400 °C | — |
Temperature | ≤ 300 °C | — |
Temperature | ≤ 200 °C | — |
Thickness | ≤ 4 nm | — |
Thickness | ≤ 3 nm | — |
Thickness | ≤ 2 nm | — |
Thickness | ≤ 1.5 nm | — |
— | ≥ 200 W | — |
— | ≥ 300 W | — |
— | ≥ 400 W | — |