Patent
US 8,419,880METHOD OF TRANSFERRING GRAPHENE
Se-hoon CHO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,419,880Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a graphene forming structure 100 according to an exemplary embodiment. Here, the term "graphene forming structure" denotes …
FIG. 2.
FIG. 3, the graphene 140 is certainly attached on the adhesive surface 150 a of the first carrier 150. [63] Afterward, as illustrated in
FIG. 4 illustrating an arrow indicating a second direction). This change helps the separation between the oxide layer 120 and the metal catalyst layer 130 by …
FIG. 5, only the graphene 140 and the metal catalyst layer 130 are left on a top surface of the first carrier 150. [75] Afterward, as illustrated in
FIG. 6, only the graphene 140 is left on the top surface of the first carrier 150. [81] Afterward, when the first carrier 150 enters a working area P5, the …
FIG. 7 is a cross-sectional view illustrating graphene transferred to a second carrier, according to an exemplary embodiment; and [35]
FIG. 8 is a flowchart of the method of transferring graphene, according to an exemplary embodiment. DETAILED DESCRIPTION EXEMPLARY EMBODIMENTS [36] Hereinafter, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of transferring graphene, the method comprising: preparing a graphene forming structure comprising a base member, an oxide layer that is hydrophilic and is formed on the base member, a metal catalyst layer that is hydrophobic and is formed on the oxide layer, and graphene that is formed on the metal catalyst layer; attaching the graphene forming structure on a surface of a first carrier; separating the oxide layer from the metal catalyst layer by applying steam to the graphene forming structure; and removing the metal catalyst layer.
: The method of claim 1, wherein the base member comprises silicon (Si), and the oxide layer is formed of silicon e -ide- dioxide (Si O 2).
: The method of claim 1, wherein the attaching the graphene forming structure on the surface of the first carrier comprises attaching the graphene on the surface of the first carrier.
: The method of claim 1, wherein the metal catalyst layer comprises at least one of nickel (Ni), copper (Cu), aluminum (Al), iron (Fe), cobalt (Co) and tungsten (W).
: The method of claim 1, wherein the first carrier is formed of a flexible material and is partly wound around a roll, whereby the first carrier is transported by roll-to-roll processing.
: The method of claim 1, wherein the first carrier is formed of a thermal release tape having at least one adhesive surface formed thereon.
: The method of claim 1, wherein the attaching the graphene forming structure on the surface of the first carrier comprises attaching the graphene forming structure on the first carrier by pushing an adhesive surface of the first carrier toward the graphene.
: The method of claim 1, wherein the separating comprises injecting pressurized air to the graphene forming structure along with the steam.
: The method of claim 1, f u rther comprising, between the separating the oxide layer from the metal catalyst layer and the removing the metal catalyst layer, forming an etching resist on the metal catalyst layer, wherein the etching resist has a predetermined pattern.
: The method of claim 1, f u rther comprising: moving the first carrier, on the surface of which the graphene forming structure is attached, in a first direction after the graphene forming structure is attached on the first carrier; and changing the direction of the moving the first carrier when the separating begins so that the oxide layer and the base member moves in the first direction, and the metal catalyst layer and the graphene along with the first carrier moves in a second direction, wherein, in the separating the oxide layer from the metal catalyst layer, the steam is applied to a front edge of the graphene forming structure.
: The method of claim 1, wherein the oxide layer and the base member separated from the metal catalyst layer via the separating the oxide layer from the metal catalyst layer are transported to be distant from the first carrier.
: The method of claim 1, wherein the removing the metal catalyst layer comprises an etching process that is performed using an etching solution comprising at least one of acid, hydrogen fluoride (HF), buffered oxide etch (BO E), a FeC l 3 solution and a Fe(N O 3)3 solution.
: The method of claim 1, f u rther comprising: after the removing the metal catalyst layer, attaching the graphene on a second carrier; separating the graphene from the first carrier; and transferring the graphene to the second carrier.
: The method of claim 1, f u rther comprising, after the removing the metal catalyst layer, removing a portion of the graphene.
: The method of claim 1, f u rther comprising moving the first carrier, on which the graphene forming structure is attached, in a first direction after the graphene forming structure is attached on the first carrier, wherein the separating the oxide layer from the metal catalyst layer is performed while the first carrier is moved.
Layer stacks claimed or described, ordered top of device to substrate.
graphene forming structure
Materials described outside the worked examples.
graphene
silicon
Si
Patent
Atlas literature
Patent
US 8,419,880Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a graphene forming structure 100 according to an exemplary embodiment. Here, the term "graphene forming structure" denotes …
FIG. 2.
FIG. 3, the graphene 140 is certainly attached on the adhesive surface 150 a of the first carrier 150. [63] Afterward, as illustrated in
FIG. 4 illustrating an arrow indicating a second direction). This change helps the separation between the oxide layer 120 and the metal catalyst layer 130 by …
FIG. 5, only the graphene 140 and the metal catalyst layer 130 are left on a top surface of the first carrier 150. [75] Afterward, as illustrated in
FIG. 6, only the graphene 140 is left on the top surface of the first carrier 150. [81] Afterward, when the first carrier 150 enters a working area P5, the …
FIG. 7 is a cross-sectional view illustrating graphene transferred to a second carrier, according to an exemplary embodiment; and [35]
FIG. 8 is a flowchart of the method of transferring graphene, according to an exemplary embodiment. DETAILED DESCRIPTION EXEMPLARY EMBODIMENTS [36] Hereinafter, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of transferring graphene, the method comprising: preparing a graphene forming structure comprising a base member, an oxide layer that is hydrophilic and is formed on the base member, a metal catalyst layer that is hydrophobic and is formed on the oxide layer, and graphene that is formed on the metal catalyst layer; attaching the graphene forming structure on a surface of a first carrier; separating the oxide layer from the metal catalyst layer by applying steam to the graphene forming structure; and removing the metal catalyst layer.
: The method of claim 1, wherein the base member comprises silicon (Si), and the oxide layer is formed of silicon e -ide- dioxide (Si O 2).
: The method of claim 1, wherein the attaching the graphene forming structure on the surface of the first carrier comprises attaching the graphene on the surface of the first carrier.
: The method of claim 1, wherein the metal catalyst layer comprises at least one of nickel (Ni), copper (Cu), aluminum (Al), iron (Fe), cobalt (Co) and tungsten (W).
: The method of claim 1, wherein the first carrier is formed of a flexible material and is partly wound around a roll, whereby the first carrier is transported by roll-to-roll processing.
: The method of claim 1, wherein the first carrier is formed of a thermal release tape having at least one adhesive surface formed thereon.
: The method of claim 1, wherein the attaching the graphene forming structure on the surface of the first carrier comprises attaching the graphene forming structure on the first carrier by pushing an adhesive surface of the first carrier toward the graphene.
: The method of claim 1, wherein the separating comprises injecting pressurized air to the graphene forming structure along with the steam.
: The method of claim 1, f u rther comprising, between the separating the oxide layer from the metal catalyst layer and the removing the metal catalyst layer, forming an etching resist on the metal catalyst layer, wherein the etching resist has a predetermined pattern.
: The method of claim 1, f u rther comprising: moving the first carrier, on the surface of which the graphene forming structure is attached, in a first direction after the graphene forming structure is attached on the first carrier; and changing the direction of the moving the first carrier when the separating begins so that the oxide layer and the base member moves in the first direction, and the metal catalyst layer and the graphene along with the first carrier moves in a second direction, wherein, in the separating the oxide layer from the metal catalyst layer, the steam is applied to a front edge of the graphene forming structure.
: The method of claim 1, wherein the oxide layer and the base member separated from the metal catalyst layer via the separating the oxide layer from the metal catalyst layer are transported to be distant from the first carrier.
: The method of claim 1, wherein the removing the metal catalyst layer comprises an etching process that is performed using an etching solution comprising at least one of acid, hydrogen fluoride (HF), buffered oxide etch (BO E), a FeC l 3 solution and a Fe(N O 3)3 solution.
: The method of claim 1, f u rther comprising: after the removing the metal catalyst layer, attaching the graphene on a second carrier; separating the graphene from the first carrier; and transferring the graphene to the second carrier.
: The method of claim 1, f u rther comprising, after the removing the metal catalyst layer, removing a portion of the graphene.
: The method of claim 1, f u rther comprising moving the first carrier, on which the graphene forming structure is attached, in a first direction after the graphene forming structure is attached on the first carrier, wherein the separating the oxide layer from the metal catalyst layer is performed while the first carrier is moved.
Layer stacks claimed or described, ordered top of device to substrate.
graphene forming structure
Materials described outside the worked examples.
graphene
silicon
Si
Patent
Atlas literature
Patent
US 8,419,880Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a graphene forming structure 100 according to an exemplary embodiment. Here, the term "graphene forming structure" denotes …
FIG. 2.
FIG. 3, the graphene 140 is certainly attached on the adhesive surface 150 a of the first carrier 150. [63] Afterward, as illustrated in
FIG. 4 illustrating an arrow indicating a second direction). This change helps the separation between the oxide layer 120 and the metal catalyst layer 130 by …
FIG. 5, only the graphene 140 and the metal catalyst layer 130 are left on a top surface of the first carrier 150. [75] Afterward, as illustrated in
FIG. 6, only the graphene 140 is left on the top surface of the first carrier 150. [81] Afterward, when the first carrier 150 enters a working area P5, the …
FIG. 7 is a cross-sectional view illustrating graphene transferred to a second carrier, according to an exemplary embodiment; and [35]
FIG. 8 is a flowchart of the method of transferring graphene, according to an exemplary embodiment. DETAILED DESCRIPTION EXEMPLARY EMBODIMENTS [36] Hereinafter, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of transferring graphene, the method comprising: preparing a graphene forming structure comprising a base member, an oxide layer that is hydrophilic and is formed on the base member, a metal catalyst layer that is hydrophobic and is formed on the oxide layer, and graphene that is formed on the metal catalyst layer; attaching the graphene forming structure on a surface of a first carrier; separating the oxide layer from the metal catalyst layer by applying steam to the graphene forming structure; and removing the metal catalyst layer.
: The method of claim 1, wherein the base member comprises silicon (Si), and the oxide layer is formed of silicon e -ide- dioxide (Si O 2).
: The method of claim 1, wherein the attaching the graphene forming structure on the surface of the first carrier comprises attaching the graphene on the surface of the first carrier.
: The method of claim 1, wherein the metal catalyst layer comprises at least one of nickel (Ni), copper (Cu), aluminum (Al), iron (Fe), cobalt (Co) and tungsten (W).
: The method of claim 1, wherein the first carrier is formed of a flexible material and is partly wound around a roll, whereby the first carrier is transported by roll-to-roll processing.
: The method of claim 1, wherein the first carrier is formed of a thermal release tape having at least one adhesive surface formed thereon.
: The method of claim 1, wherein the attaching the graphene forming structure on the surface of the first carrier comprises attaching the graphene forming structure on the first carrier by pushing an adhesive surface of the first carrier toward the graphene.
: The method of claim 1, wherein the separating comprises injecting pressurized air to the graphene forming structure along with the steam.
: The method of claim 1, f u rther comprising, between the separating the oxide layer from the metal catalyst layer and the removing the metal catalyst layer, forming an etching resist on the metal catalyst layer, wherein the etching resist has a predetermined pattern.
: The method of claim 1, f u rther comprising: moving the first carrier, on the surface of which the graphene forming structure is attached, in a first direction after the graphene forming structure is attached on the first carrier; and changing the direction of the moving the first carrier when the separating begins so that the oxide layer and the base member moves in the first direction, and the metal catalyst layer and the graphene along with the first carrier moves in a second direction, wherein, in the separating the oxide layer from the metal catalyst layer, the steam is applied to a front edge of the graphene forming structure.
: The method of claim 1, wherein the oxide layer and the base member separated from the metal catalyst layer via the separating the oxide layer from the metal catalyst layer are transported to be distant from the first carrier.
: The method of claim 1, wherein the removing the metal catalyst layer comprises an etching process that is performed using an etching solution comprising at least one of acid, hydrogen fluoride (HF), buffered oxide etch (BO E), a FeC l 3 solution and a Fe(N O 3)3 solution.
: The method of claim 1, f u rther comprising: after the removing the metal catalyst layer, attaching the graphene on a second carrier; separating the graphene from the first carrier; and transferring the graphene to the second carrier.
: The method of claim 1, f u rther comprising, after the removing the metal catalyst layer, removing a portion of the graphene.
: The method of claim 1, f u rther comprising moving the first carrier, on which the graphene forming structure is attached, in a first direction after the graphene forming structure is attached on the first carrier, wherein the separating the oxide layer from the metal catalyst layer is performed while the first carrier is moved.
Layer stacks claimed or described, ordered top of device to substrate.
graphene forming structure
Materials described outside the worked examples.
graphene
silicon
Si
Patent
Atlas literature
Patent
US 8,419,880Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional view of a graphene forming structure 100 according to an exemplary embodiment. Here, the term "graphene forming structure" denotes …
FIG. 2.
FIG. 3, the graphene 140 is certainly attached on the adhesive surface 150 a of the first carrier 150. [63] Afterward, as illustrated in
FIG. 4 illustrating an arrow indicating a second direction). This change helps the separation between the oxide layer 120 and the metal catalyst layer 130 by …
FIG. 5, only the graphene 140 and the metal catalyst layer 130 are left on a top surface of the first carrier 150. [75] Afterward, as illustrated in
FIG. 6, only the graphene 140 is left on the top surface of the first carrier 150. [81] Afterward, when the first carrier 150 enters a working area P5, the …
FIG. 7 is a cross-sectional view illustrating graphene transferred to a second carrier, according to an exemplary embodiment; and [35]
FIG. 8 is a flowchart of the method of transferring graphene, according to an exemplary embodiment. DETAILED DESCRIPTION EXEMPLARY EMBODIMENTS [36] Hereinafter, …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A method of transferring graphene, the method comprising: preparing a graphene forming structure comprising a base member, an oxide layer that is hydrophilic and is formed on the base member, a metal catalyst layer that is hydrophobic and is formed on the oxide layer, and graphene that is formed on the metal catalyst layer; attaching the graphene forming structure on a surface of a first carrier; separating the oxide layer from the metal catalyst layer by applying steam to the graphene forming structure; and removing the metal catalyst layer.
: The method of claim 1, wherein the base member comprises silicon (Si), and the oxide layer is formed of silicon e -ide- dioxide (Si O 2).
: The method of claim 1, wherein the attaching the graphene forming structure on the surface of the first carrier comprises attaching the graphene on the surface of the first carrier.
: The method of claim 1, wherein the metal catalyst layer comprises at least one of nickel (Ni), copper (Cu), aluminum (Al), iron (Fe), cobalt (Co) and tungsten (W).
: The method of claim 1, wherein the first carrier is formed of a flexible material and is partly wound around a roll, whereby the first carrier is transported by roll-to-roll processing.
: The method of claim 1, wherein the first carrier is formed of a thermal release tape having at least one adhesive surface formed thereon.
: The method of claim 1, wherein the attaching the graphene forming structure on the surface of the first carrier comprises attaching the graphene forming structure on the first carrier by pushing an adhesive surface of the first carrier toward the graphene.
: The method of claim 1, wherein the separating comprises injecting pressurized air to the graphene forming structure along with the steam.
: The method of claim 1, f u rther comprising, between the separating the oxide layer from the metal catalyst layer and the removing the metal catalyst layer, forming an etching resist on the metal catalyst layer, wherein the etching resist has a predetermined pattern.
: The method of claim 1, f u rther comprising: moving the first carrier, on the surface of which the graphene forming structure is attached, in a first direction after the graphene forming structure is attached on the first carrier; and changing the direction of the moving the first carrier when the separating begins so that the oxide layer and the base member moves in the first direction, and the metal catalyst layer and the graphene along with the first carrier moves in a second direction, wherein, in the separating the oxide layer from the metal catalyst layer, the steam is applied to a front edge of the graphene forming structure.
: The method of claim 1, wherein the oxide layer and the base member separated from the metal catalyst layer via the separating the oxide layer from the metal catalyst layer are transported to be distant from the first carrier.
: The method of claim 1, wherein the removing the metal catalyst layer comprises an etching process that is performed using an etching solution comprising at least one of acid, hydrogen fluoride (HF), buffered oxide etch (BO E), a FeC l 3 solution and a Fe(N O 3)3 solution.
: The method of claim 1, f u rther comprising: after the removing the metal catalyst layer, attaching the graphene on a second carrier; separating the graphene from the first carrier; and transferring the graphene to the second carrier.
: The method of claim 1, f u rther comprising, after the removing the metal catalyst layer, removing a portion of the graphene.
: The method of claim 1, f u rther comprising moving the first carrier, on which the graphene forming structure is attached, in a first direction after the graphene forming structure is attached on the first carrier, wherein the separating the oxide layer from the metal catalyst layer is performed while the first carrier is moved.
Layer stacks claimed or described, ordered top of device to substrate.
graphene forming structure
Materials described outside the worked examples.
graphene
silicon
Si
silicon dioxide
SiO₂
metal catalyst layer
etching solution
silicon dioxide
SiO₂
metal catalyst layer
etching solution
silicon dioxide
SiO₂
metal catalyst layer
etching solution
silicon dioxide
SiO₂
metal catalyst layer
etching solution