Patent
US 10,160,653METHOD OF PRODUCING GRAPHENE-BASED MATERIALS, OBTAINABLE MATERIALS AND THEIR USE
Xinrui Niu
US
Copyright © 2026 Matter42. All rights reserved.
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing a graphene-based material comprising steps of: (i) providing a mixture of at least one carbide compound and at least one etching compound in the presence of a reaction solvent (ii) subjecting the mixture of step (i) to sonication at at least one frequency above 15 kHz for forming the graphene-based material. Original
The method of claim 1, wherein the graphene-based material comprises graphene monolayers. Original
The method of claim 1, wherein the carbide compound is selected from aluminium carbide, iron carbide, zirconium carbide, titanium carbide, hafnium carbide, vanadium carbide, niobium carbide, tantalum carbide, chromium carbide, molybdenum carbide, silicon carbide or tungsten carbide. Original
The method of claim 1, wherein the carbide compound comprises at least two different elements selected from aluminium, iron, zirconium, titanium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, silicon or tungsten. Original
The method of claim 1, wherein the carbide compound is composed of particles with an average diameter of from 2 nm to 50 m. Original
The method of claim 1, wherein the etching compound is an inorganic acid selected from hydrochloric acid, nitric acid or sulfuric acid Original
The method of claim 1, wherein the etching compound is a metal hydroxide selected from the group consisting of sodium hydroxide, potassium hydroxide, calcium hydroxide and barium hydroxide. Original
The method of claim 1, wherein step (i) comprises providing a mixture of at least two carbide compounds and at least two etching compounds. Original
The method of claim 1, wherein step (i) comprises steps of: a) providing a mixture of the at least one etching compound and the reaction solvent; b) adding the at least one carbide compound to the mixture of step a); c) mixing the mixture obtained in step b). Original
The method of claim 1, wherein sonication in step (ii) is carried out at one frequency of from 20 kHz to 400 kHz for 5 m in to 72 h and with an output energy of 10 W/cm 2 to 200 W/cm 2. Original
The method of claim 1, wherein step (ii) is carried out at a temperature between 20 ° C and 30° C and a pressure of about 0.1 MPa. Original
The method of claim 1 with a further step (iii) comprising at least one of: * isolating the graphene-based material from the further components present in the mixture after carrying out step (ii); or * purifying the graphene-based material Original
A graphene-based material obtained with the method of claim 1. Canceled
Materials described outside the worked examples.
graphene-based material
2D porous graphene
graphene monolayers
carbide compound
aluminium carbide
Al₄C₃
iron carbide
zirconium carbide
ZrC
titanium carbide
TiC
hafnium carbide
HfC
vanadium carbide
VC
niobium carbide
NbC
tantalum carbide
TaC
chromium carbide
molybdenum carbide
silicon carbide
SiC
tungsten carbide
WC
inorganic acid etching compound
hydrochloric acid
HCl
nitric acid
HNO₃
sulfuric acid
H₂SO₄
metal hydroxide etching compound
sodium hydroxide
NaOH
potassium hydroxide
KOH
calcium hydroxide
Ca(OH)2
barium hydroxide
Ba(OH)2
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 20–30 °C | — |
Thickness | 0.5–30 nm | — |
Thickness | 0.5–20 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 30 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 3 nm | — |
Pressure | ≥ 10 pa | — |
Pressure | ≥ 20 pa | — |
— | 2–200 W | — |
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing a graphene-based material comprising steps of: (i) providing a mixture of at least one carbide compound and at least one etching compound in the presence of a reaction solvent (ii) subjecting the mixture of step (i) to sonication at at least one frequency above 15 kHz for forming the graphene-based material. Original
The method of claim 1, wherein the graphene-based material comprises graphene monolayers. Original
The method of claim 1, wherein the carbide compound is selected from aluminium carbide, iron carbide, zirconium carbide, titanium carbide, hafnium carbide, vanadium carbide, niobium carbide, tantalum carbide, chromium carbide, molybdenum carbide, silicon carbide or tungsten carbide. Original
The method of claim 1, wherein the carbide compound comprises at least two different elements selected from aluminium, iron, zirconium, titanium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, silicon or tungsten. Original
The method of claim 1, wherein the carbide compound is composed of particles with an average diameter of from 2 nm to 50 m. Original
The method of claim 1, wherein the etching compound is an inorganic acid selected from hydrochloric acid, nitric acid or sulfuric acid Original
The method of claim 1, wherein the etching compound is a metal hydroxide selected from the group consisting of sodium hydroxide, potassium hydroxide, calcium hydroxide and barium hydroxide. Original
The method of claim 1, wherein step (i) comprises providing a mixture of at least two carbide compounds and at least two etching compounds. Original
The method of claim 1, wherein step (i) comprises steps of: a) providing a mixture of the at least one etching compound and the reaction solvent; b) adding the at least one carbide compound to the mixture of step a); c) mixing the mixture obtained in step b). Original
The method of claim 1, wherein sonication in step (ii) is carried out at one frequency of from 20 kHz to 400 kHz for 5 m in to 72 h and with an output energy of 10 W/cm 2 to 200 W/cm 2. Original
The method of claim 1, wherein step (ii) is carried out at a temperature between 20 ° C and 30° C and a pressure of about 0.1 MPa. Original
The method of claim 1 with a further step (iii) comprising at least one of: * isolating the graphene-based material from the further components present in the mixture after carrying out step (ii); or * purifying the graphene-based material Original
A graphene-based material obtained with the method of claim 1. Canceled
Materials described outside the worked examples.
graphene-based material
2D porous graphene
graphene monolayers
carbide compound
aluminium carbide
Al₄C₃
iron carbide
zirconium carbide
ZrC
titanium carbide
TiC
hafnium carbide
HfC
vanadium carbide
VC
niobium carbide
NbC
tantalum carbide
TaC
chromium carbide
molybdenum carbide
silicon carbide
SiC
tungsten carbide
WC
inorganic acid etching compound
hydrochloric acid
HCl
nitric acid
HNO₃
sulfuric acid
H₂SO₄
metal hydroxide etching compound
sodium hydroxide
NaOH
potassium hydroxide
KOH
calcium hydroxide
Ca(OH)2
barium hydroxide
Ba(OH)2
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 20–30 °C | — |
Thickness | 0.5–30 nm | — |
Thickness | 0.5–20 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 30 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 3 nm | — |
Pressure | ≥ 10 pa | — |
Pressure | ≥ 20 pa | — |
— | 2–200 W | — |
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing a graphene-based material comprising steps of: (i) providing a mixture of at least one carbide compound and at least one etching compound in the presence of a reaction solvent (ii) subjecting the mixture of step (i) to sonication at at least one frequency above 15 kHz for forming the graphene-based material. Original
The method of claim 1, wherein the graphene-based material comprises graphene monolayers. Original
The method of claim 1, wherein the carbide compound is selected from aluminium carbide, iron carbide, zirconium carbide, titanium carbide, hafnium carbide, vanadium carbide, niobium carbide, tantalum carbide, chromium carbide, molybdenum carbide, silicon carbide or tungsten carbide. Original
The method of claim 1, wherein the carbide compound comprises at least two different elements selected from aluminium, iron, zirconium, titanium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, silicon or tungsten. Original
The method of claim 1, wherein the carbide compound is composed of particles with an average diameter of from 2 nm to 50 m. Original
The method of claim 1, wherein the etching compound is an inorganic acid selected from hydrochloric acid, nitric acid or sulfuric acid Original
The method of claim 1, wherein the etching compound is a metal hydroxide selected from the group consisting of sodium hydroxide, potassium hydroxide, calcium hydroxide and barium hydroxide. Original
The method of claim 1, wherein step (i) comprises providing a mixture of at least two carbide compounds and at least two etching compounds. Original
The method of claim 1, wherein step (i) comprises steps of: a) providing a mixture of the at least one etching compound and the reaction solvent; b) adding the at least one carbide compound to the mixture of step a); c) mixing the mixture obtained in step b). Original
The method of claim 1, wherein sonication in step (ii) is carried out at one frequency of from 20 kHz to 400 kHz for 5 m in to 72 h and with an output energy of 10 W/cm 2 to 200 W/cm 2. Original
The method of claim 1, wherein step (ii) is carried out at a temperature between 20 ° C and 30° C and a pressure of about 0.1 MPa. Original
The method of claim 1 with a further step (iii) comprising at least one of: * isolating the graphene-based material from the further components present in the mixture after carrying out step (ii); or * purifying the graphene-based material Original
A graphene-based material obtained with the method of claim 1. Canceled
Materials described outside the worked examples.
graphene-based material
2D porous graphene
graphene monolayers
carbide compound
aluminium carbide
Al₄C₃
iron carbide
zirconium carbide
ZrC
titanium carbide
TiC
hafnium carbide
HfC
vanadium carbide
VC
niobium carbide
NbC
tantalum carbide
TaC
chromium carbide
molybdenum carbide
silicon carbide
SiC
tungsten carbide
WC
inorganic acid etching compound
hydrochloric acid
HCl
nitric acid
HNO₃
sulfuric acid
H₂SO₄
metal hydroxide etching compound
sodium hydroxide
NaOH
potassium hydroxide
KOH
calcium hydroxide
Ca(OH)2
barium hydroxide
Ba(OH)2
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 20–30 °C | — |
Thickness | 0.5–30 nm | — |
Thickness | 0.5–20 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 30 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 3 nm | — |
Pressure | ≥ 10 pa | — |
Pressure | ≥ 20 pa | — |
— | 2–200 W | — |
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of producing a graphene-based material comprising steps of: (i) providing a mixture of at least one carbide compound and at least one etching compound in the presence of a reaction solvent (ii) subjecting the mixture of step (i) to sonication at at least one frequency above 15 kHz for forming the graphene-based material. Original
The method of claim 1, wherein the graphene-based material comprises graphene monolayers. Original
The method of claim 1, wherein the carbide compound is selected from aluminium carbide, iron carbide, zirconium carbide, titanium carbide, hafnium carbide, vanadium carbide, niobium carbide, tantalum carbide, chromium carbide, molybdenum carbide, silicon carbide or tungsten carbide. Original
The method of claim 1, wherein the carbide compound comprises at least two different elements selected from aluminium, iron, zirconium, titanium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, silicon or tungsten. Original
The method of claim 1, wherein the carbide compound is composed of particles with an average diameter of from 2 nm to 50 m. Original
The method of claim 1, wherein the etching compound is an inorganic acid selected from hydrochloric acid, nitric acid or sulfuric acid Original
The method of claim 1, wherein the etching compound is a metal hydroxide selected from the group consisting of sodium hydroxide, potassium hydroxide, calcium hydroxide and barium hydroxide. Original
The method of claim 1, wherein step (i) comprises providing a mixture of at least two carbide compounds and at least two etching compounds. Original
The method of claim 1, wherein step (i) comprises steps of: a) providing a mixture of the at least one etching compound and the reaction solvent; b) adding the at least one carbide compound to the mixture of step a); c) mixing the mixture obtained in step b). Original
The method of claim 1, wherein sonication in step (ii) is carried out at one frequency of from 20 kHz to 400 kHz for 5 m in to 72 h and with an output energy of 10 W/cm 2 to 200 W/cm 2. Original
The method of claim 1, wherein step (ii) is carried out at a temperature between 20 ° C and 30° C and a pressure of about 0.1 MPa. Original
The method of claim 1 with a further step (iii) comprising at least one of: * isolating the graphene-based material from the further components present in the mixture after carrying out step (ii); or * purifying the graphene-based material Original
A graphene-based material obtained with the method of claim 1. Canceled
Materials described outside the worked examples.
graphene-based material
2D porous graphene
graphene monolayers
carbide compound
aluminium carbide
Al₄C₃
iron carbide
zirconium carbide
ZrC
titanium carbide
TiC
hafnium carbide
HfC
vanadium carbide
VC
niobium carbide
NbC
tantalum carbide
TaC
chromium carbide
molybdenum carbide
silicon carbide
SiC
tungsten carbide
WC
inorganic acid etching compound
hydrochloric acid
HCl
nitric acid
HNO₃
sulfuric acid
H₂SO₄
metal hydroxide etching compound
sodium hydroxide
NaOH
potassium hydroxide
KOH
calcium hydroxide
Ca(OH)2
barium hydroxide
Ba(OH)2
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 20–30 °C | — |
Thickness | 0.5–30 nm | — |
Thickness | 0.5–20 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 30 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 3 nm | — |
Pressure | ≥ 10 pa | — |
Pressure | ≥ 20 pa | — |
— | 2–200 W | — |