Patent
Atlas literature
Patent
US 9,058,985Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Attorney Docket No: 2557 SI -002002-US Application No.: 14/070,999 Page 2 The following is a complete, marked up listing of revised claims with a status identifier in parentheses, underlined text indicating insertions, and strikethrough and/or double-bracketed text indicating deletions.
The method of claim 1, wherein the plasma-treating includes plasma-treating the surface of the hexagonal boron nitride sheet having an area of about 1 cm2 or more.
The method of claim 1, further comprising: providing the hexagonal boron nitride sheet on a metal catalyst thin film before the plasma-treating.
The method of claim 6, further comprising: removing the metal catalyst thin film from the hexagonal boron nitride sheet by etching after the plasma-treating.
The method of claim 1, wherein the graphene sheet is one of a single layer of a polycyclic aromatic sheet including a plurality of carbon atoms connected to each other via a covalent bond and arranged on a plane, and a multi-layer formed by stacking a plurality of the polycyclic aromatic sheets, and the graphene sheet has a thickness of about 30 nm or less.
The method of claim 1, wherein the depositing deposits the hexagonal boron nitride sheet on the graphene sheet having an area of about 1 cm2 or more. Attorney Docket No: 2557 SI -002002-US Application No.: 14/070,999 Page 4
The method of claim 1, further comprising: providing the graphene sheet on at least one substrate before the depositing, the substrate including at least one of a Si substrate, a SiC substrate, a glass substrate, a GaN substrate, a silica substrate, a sapphire substrate, a metal substrate, and a carbon substrate.
The method of claim 1, wherein the forming an insulating layer forms a high-k dielectric material having a dielectric constant of 7 or more.
The method of claim 1, wherein the forming an insulating layer includes forming at least one of a metal oxide, a metal nitride, a polymer, and an organic molecule.
The method of claim 12, wherein the forming an insulating layer includes forming the metal oxide, the metal oxide including at least one of a silicon oxide, an aluminum oxide, a tantalum oxide, a titanium oxide, a tin oxide, a vanadium oxide, a bariumstrontium titanate, a barium zirconate titanate, a lead zirconate titanate, a lead lantanium titanate, a strontium titanate, a barium titanate, a barium magnesium fluoride, a lantanium oxide, a fluorine oxide, a magnesium oxide, a bismuth oxide, a bismuth titanate, a niobium oxide, a strontium bismuth titanate, a strontium bismuth tantalate, a tantalum pentoxide, a bismuth tantalite niobumate, and a yttrium oxide. SVG 14070999.12-30-2014.I₄O₉T₆Q₂PXXIFW4.CLM6399849.3.1361.144.2272.294.svg 0.5 3.037 Graph Black and white
The method of claim 1, wherein the forming an insulating layer includes at least one of atomic layer deposition, ' vacuum deposition, molecular- ray epitaxial growth, ion cluster beaming, low-energy ion-beaming, ion plating, hemical vapor deposition (CVD), sputtering, atmospheric plasma method, spray- oating, spin coating, blade coating, dip coating, casting, roll coating, bar coating, and ie coating.
A graphene laminated structure comprising: a channel layer on a substrate, the channel layer including a graphene sheet; a buffer layer on the channel layer, the buffer layer including a hexagonal boron nitride sheet; and an insulating layer on the buffer layer. withdrawn
The graphene laminated structure of claim 15, wherein an area of the graphene sheet is about 0.5 mm2 or more. withdrawn
The graphene laminated structure of claim 15, wherein an area of the hexagonal boron nitride sheet is about 0.5 mm2 or more. withdrawn
The graphene laminated structure of claim 15, wherein the ' nsulating layer includes at least one of a metal oxide, a metal nitride, a polymer, and an organic molecule. Attorney Docket No: 2557S I -002002-US Application No.: 14/070,999 Page 6 withdrawn
An electronic device comprising the graphene oxide, a titanium oxide, a tin oxide, a vanadium titanate, a lead zirconate titanate, a lead tita n ate, a barium magnesium fluoride, a oxide, a bismuth oxide, a bismuth titanate, a strontium bismuth tantalate, a tantalum pentoxide, withdrawn laminated structure of claim 15. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene laminated structure
Materials described outside the worked examples.
hexagonal boron nitride sheet
h-BN
graphene sheet
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Flow Rate | 1–10 sccm | — |
Pressure |
Patent
Atlas literature
Patent
US 9,058,985Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Attorney Docket No: 2557 SI -002002-US Application No.: 14/070,999 Page 2 The following is a complete, marked up listing of revised claims with a status identifier in parentheses, underlined text indicating insertions, and strikethrough and/or double-bracketed text indicating deletions.
The method of claim 1, wherein the plasma-treating includes plasma-treating the surface of the hexagonal boron nitride sheet having an area of about 1 cm2 or more.
The method of claim 1, further comprising: providing the hexagonal boron nitride sheet on a metal catalyst thin film before the plasma-treating.
The method of claim 6, further comprising: removing the metal catalyst thin film from the hexagonal boron nitride sheet by etching after the plasma-treating.
The method of claim 1, wherein the graphene sheet is one of a single layer of a polycyclic aromatic sheet including a plurality of carbon atoms connected to each other via a covalent bond and arranged on a plane, and a multi-layer formed by stacking a plurality of the polycyclic aromatic sheets, and the graphene sheet has a thickness of about 30 nm or less.
The method of claim 1, wherein the depositing deposits the hexagonal boron nitride sheet on the graphene sheet having an area of about 1 cm2 or more. Attorney Docket No: 2557 SI -002002-US Application No.: 14/070,999 Page 4
The method of claim 1, further comprising: providing the graphene sheet on at least one substrate before the depositing, the substrate including at least one of a Si substrate, a SiC substrate, a glass substrate, a GaN substrate, a silica substrate, a sapphire substrate, a metal substrate, and a carbon substrate.
The method of claim 1, wherein the forming an insulating layer forms a high-k dielectric material having a dielectric constant of 7 or more.
The method of claim 1, wherein the forming an insulating layer includes forming at least one of a metal oxide, a metal nitride, a polymer, and an organic molecule.
The method of claim 12, wherein the forming an insulating layer includes forming the metal oxide, the metal oxide including at least one of a silicon oxide, an aluminum oxide, a tantalum oxide, a titanium oxide, a tin oxide, a vanadium oxide, a bariumstrontium titanate, a barium zirconate titanate, a lead zirconate titanate, a lead lantanium titanate, a strontium titanate, a barium titanate, a barium magnesium fluoride, a lantanium oxide, a fluorine oxide, a magnesium oxide, a bismuth oxide, a bismuth titanate, a niobium oxide, a strontium bismuth titanate, a strontium bismuth tantalate, a tantalum pentoxide, a bismuth tantalite niobumate, and a yttrium oxide. SVG 14070999.12-30-2014.I₄O₉T₆Q₂PXXIFW4.CLM6399849.3.1361.144.2272.294.svg 0.5 3.037 Graph Black and white
The method of claim 1, wherein the forming an insulating layer includes at least one of atomic layer deposition, ' vacuum deposition, molecular- ray epitaxial growth, ion cluster beaming, low-energy ion-beaming, ion plating, hemical vapor deposition (CVD), sputtering, atmospheric plasma method, spray- oating, spin coating, blade coating, dip coating, casting, roll coating, bar coating, and ie coating.
A graphene laminated structure comprising: a channel layer on a substrate, the channel layer including a graphene sheet; a buffer layer on the channel layer, the buffer layer including a hexagonal boron nitride sheet; and an insulating layer on the buffer layer. withdrawn
The graphene laminated structure of claim 15, wherein an area of the graphene sheet is about 0.5 mm2 or more. withdrawn
The graphene laminated structure of claim 15, wherein an area of the hexagonal boron nitride sheet is about 0.5 mm2 or more. withdrawn
The graphene laminated structure of claim 15, wherein the ' nsulating layer includes at least one of a metal oxide, a metal nitride, a polymer, and an organic molecule. Attorney Docket No: 2557S I -002002-US Application No.: 14/070,999 Page 6 withdrawn
An electronic device comprising the graphene oxide, a titanium oxide, a tin oxide, a vanadium titanate, a lead zirconate titanate, a lead tita n ate, a barium magnesium fluoride, a oxide, a bismuth oxide, a bismuth titanate, a strontium bismuth tantalate, a tantalum pentoxide, withdrawn laminated structure of claim 15. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene laminated structure
Materials described outside the worked examples.
hexagonal boron nitride sheet
h-BN
graphene sheet
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Flow Rate | 1–10 sccm | — |
Pressure |
Patent
Atlas literature
Patent
US 9,058,985Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Attorney Docket No: 2557 SI -002002-US Application No.: 14/070,999 Page 2 The following is a complete, marked up listing of revised claims with a status identifier in parentheses, underlined text indicating insertions, and strikethrough and/or double-bracketed text indicating deletions.
The method of claim 1, wherein the plasma-treating includes plasma-treating the surface of the hexagonal boron nitride sheet having an area of about 1 cm2 or more.
The method of claim 1, further comprising: providing the hexagonal boron nitride sheet on a metal catalyst thin film before the plasma-treating.
The method of claim 6, further comprising: removing the metal catalyst thin film from the hexagonal boron nitride sheet by etching after the plasma-treating.
The method of claim 1, wherein the graphene sheet is one of a single layer of a polycyclic aromatic sheet including a plurality of carbon atoms connected to each other via a covalent bond and arranged on a plane, and a multi-layer formed by stacking a plurality of the polycyclic aromatic sheets, and the graphene sheet has a thickness of about 30 nm or less.
The method of claim 1, wherein the depositing deposits the hexagonal boron nitride sheet on the graphene sheet having an area of about 1 cm2 or more. Attorney Docket No: 2557 SI -002002-US Application No.: 14/070,999 Page 4
The method of claim 1, further comprising: providing the graphene sheet on at least one substrate before the depositing, the substrate including at least one of a Si substrate, a SiC substrate, a glass substrate, a GaN substrate, a silica substrate, a sapphire substrate, a metal substrate, and a carbon substrate.
The method of claim 1, wherein the forming an insulating layer forms a high-k dielectric material having a dielectric constant of 7 or more.
The method of claim 1, wherein the forming an insulating layer includes forming at least one of a metal oxide, a metal nitride, a polymer, and an organic molecule.
The method of claim 12, wherein the forming an insulating layer includes forming the metal oxide, the metal oxide including at least one of a silicon oxide, an aluminum oxide, a tantalum oxide, a titanium oxide, a tin oxide, a vanadium oxide, a bariumstrontium titanate, a barium zirconate titanate, a lead zirconate titanate, a lead lantanium titanate, a strontium titanate, a barium titanate, a barium magnesium fluoride, a lantanium oxide, a fluorine oxide, a magnesium oxide, a bismuth oxide, a bismuth titanate, a niobium oxide, a strontium bismuth titanate, a strontium bismuth tantalate, a tantalum pentoxide, a bismuth tantalite niobumate, and a yttrium oxide. SVG 14070999.12-30-2014.I₄O₉T₆Q₂PXXIFW4.CLM6399849.3.1361.144.2272.294.svg 0.5 3.037 Graph Black and white
The method of claim 1, wherein the forming an insulating layer includes at least one of atomic layer deposition, ' vacuum deposition, molecular- ray epitaxial growth, ion cluster beaming, low-energy ion-beaming, ion plating, hemical vapor deposition (CVD), sputtering, atmospheric plasma method, spray- oating, spin coating, blade coating, dip coating, casting, roll coating, bar coating, and ie coating.
A graphene laminated structure comprising: a channel layer on a substrate, the channel layer including a graphene sheet; a buffer layer on the channel layer, the buffer layer including a hexagonal boron nitride sheet; and an insulating layer on the buffer layer. withdrawn
The graphene laminated structure of claim 15, wherein an area of the graphene sheet is about 0.5 mm2 or more. withdrawn
The graphene laminated structure of claim 15, wherein an area of the hexagonal boron nitride sheet is about 0.5 mm2 or more. withdrawn
The graphene laminated structure of claim 15, wherein the ' nsulating layer includes at least one of a metal oxide, a metal nitride, a polymer, and an organic molecule. Attorney Docket No: 2557S I -002002-US Application No.: 14/070,999 Page 6 withdrawn
An electronic device comprising the graphene oxide, a titanium oxide, a tin oxide, a vanadium titanate, a lead zirconate titanate, a lead tita n ate, a barium magnesium fluoride, a oxide, a bismuth oxide, a bismuth titanate, a strontium bismuth tantalate, a tantalum pentoxide, withdrawn laminated structure of claim 15. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene laminated structure
Materials described outside the worked examples.
hexagonal boron nitride sheet
h-BN
graphene sheet
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Flow Rate | 1–10 sccm | — |
Pressure |
Patent
Atlas literature
Patent
US 9,058,985Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Attorney Docket No: 2557 SI -002002-US Application No.: 14/070,999 Page 2 The following is a complete, marked up listing of revised claims with a status identifier in parentheses, underlined text indicating insertions, and strikethrough and/or double-bracketed text indicating deletions.
The method of claim 1, wherein the plasma-treating includes plasma-treating the surface of the hexagonal boron nitride sheet having an area of about 1 cm2 or more.
The method of claim 1, further comprising: providing the hexagonal boron nitride sheet on a metal catalyst thin film before the plasma-treating.
The method of claim 6, further comprising: removing the metal catalyst thin film from the hexagonal boron nitride sheet by etching after the plasma-treating.
The method of claim 1, wherein the graphene sheet is one of a single layer of a polycyclic aromatic sheet including a plurality of carbon atoms connected to each other via a covalent bond and arranged on a plane, and a multi-layer formed by stacking a plurality of the polycyclic aromatic sheets, and the graphene sheet has a thickness of about 30 nm or less.
The method of claim 1, wherein the depositing deposits the hexagonal boron nitride sheet on the graphene sheet having an area of about 1 cm2 or more. Attorney Docket No: 2557 SI -002002-US Application No.: 14/070,999 Page 4
The method of claim 1, further comprising: providing the graphene sheet on at least one substrate before the depositing, the substrate including at least one of a Si substrate, a SiC substrate, a glass substrate, a GaN substrate, a silica substrate, a sapphire substrate, a metal substrate, and a carbon substrate.
The method of claim 1, wherein the forming an insulating layer forms a high-k dielectric material having a dielectric constant of 7 or more.
The method of claim 1, wherein the forming an insulating layer includes forming at least one of a metal oxide, a metal nitride, a polymer, and an organic molecule.
The method of claim 12, wherein the forming an insulating layer includes forming the metal oxide, the metal oxide including at least one of a silicon oxide, an aluminum oxide, a tantalum oxide, a titanium oxide, a tin oxide, a vanadium oxide, a bariumstrontium titanate, a barium zirconate titanate, a lead zirconate titanate, a lead lantanium titanate, a strontium titanate, a barium titanate, a barium magnesium fluoride, a lantanium oxide, a fluorine oxide, a magnesium oxide, a bismuth oxide, a bismuth titanate, a niobium oxide, a strontium bismuth titanate, a strontium bismuth tantalate, a tantalum pentoxide, a bismuth tantalite niobumate, and a yttrium oxide. SVG 14070999.12-30-2014.I₄O₉T₆Q₂PXXIFW4.CLM6399849.3.1361.144.2272.294.svg 0.5 3.037 Graph Black and white
The method of claim 1, wherein the forming an insulating layer includes at least one of atomic layer deposition, ' vacuum deposition, molecular- ray epitaxial growth, ion cluster beaming, low-energy ion-beaming, ion plating, hemical vapor deposition (CVD), sputtering, atmospheric plasma method, spray- oating, spin coating, blade coating, dip coating, casting, roll coating, bar coating, and ie coating.
A graphene laminated structure comprising: a channel layer on a substrate, the channel layer including a graphene sheet; a buffer layer on the channel layer, the buffer layer including a hexagonal boron nitride sheet; and an insulating layer on the buffer layer. withdrawn
The graphene laminated structure of claim 15, wherein an area of the graphene sheet is about 0.5 mm2 or more. withdrawn
The graphene laminated structure of claim 15, wherein an area of the hexagonal boron nitride sheet is about 0.5 mm2 or more. withdrawn
The graphene laminated structure of claim 15, wherein the ' nsulating layer includes at least one of a metal oxide, a metal nitride, a polymer, and an organic molecule. Attorney Docket No: 2557S I -002002-US Application No.: 14/070,999 Page 6 withdrawn
An electronic device comprising the graphene oxide, a titanium oxide, a tin oxide, a vanadium titanate, a lead zirconate titanate, a lead tita n ate, a barium magnesium fluoride, a oxide, a bismuth oxide, a bismuth titanate, a strontium bismuth tantalate, a tantalum pentoxide, withdrawn laminated structure of claim 15. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
graphene laminated structure
Materials described outside the worked examples.
hexagonal boron nitride sheet
h-BN
graphene sheet
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Flow Rate | 1–10 sccm | — |
Pressure |
metal catalyst thin film
insulating layer
fluorine-based gas plasma
| — |
Duration | 1–10 seconds | — |
metal catalyst thin film
insulating layer
fluorine-based gas plasma
| — |
Duration | 1–10 seconds | — |
metal catalyst thin film
insulating layer
fluorine-based gas plasma
| — |
Duration | 1–10 seconds | — |
metal catalyst thin film
insulating layer
fluorine-based gas plasma
| — |
Duration | 1–10 seconds | — |
