Patent
US 8,999,440METHOD OF MANUFACTURING A STRUCTURE COMPRISING A GRAPHENE SHEET PROVIDED WITH METAL PINS, STRUCTURE THUS OBTAINED AND USE THEREOF
Aziz Zenasni
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,999,440Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a structure comprising a graphene sheet having a first face and a second face, the first face being provided with a plurality of metal pins, the metal pins being separated from one another by a dielectric medium selected from air and dielectric materials, said method comprising: synthesizing, by vapor phase catalytic growth, the graphene sheet on a plurality of metal pins, the metal pins being disposed on a membrane made from a dielectric material or integrated in the membrane, wherein the catalytic growth is catalysed by the metal pins, wherein the metal pins are formed of a metal or a mixture of metals, and the metal (s) having a lattice parameter within about 2% of a lattice parameter of the graphene.
The method of claim 1, wherein the vapor phase catalytic growth comprises chemical vapor deposition.
The method of claim 1, wherein the metal pins form a lattice.
The method of claim 1, further comprising producing the metal pins, wherein producing the metal pins comprises filling openings in a support with a metal or metal alloy.
The method according to claim 1, further comprising removing the membrane. 20.-26.
canceled
The method of claim [[5]] 1, wherein the metal pins are formed of a metal or a mixture of metals selected from the group consisting of nickel, copper, cobalt, ruthenium, palladium, iridium and platinum.
The method of claim 6, wherein the metal pins are formed of nickel.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials4 process steps
Fabrication of a graphene sheet on nickel nanopins integrated in an SiOCH membrane. The process involves: (1) PECVD deposition of SiOCH on a silicon substrate partially coated with 5 nm PVD nickel, followed by electron beam lithography to form a nanoporous SiOCH membrane with ~40 nm diameter pores separated by ~40 nm; (2) electrodeposition of nickel nanowires into the nanopores; (3) LPCVD synthesis of graphene on the nickel nanopins. Optional removal of nickel nanopins by wet etching in 1 M FeCl₃ solution yields a nanoporous SiOCH membrane supporting a graphene sheet.
Layer stacks claimed or described, ordered top of device to substrate.
graphene sheet on metal pins in dielectric membrane
Materials described outside the worked examples.
graphene sheet
C
metal pins (catalyst)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0–6 Pa | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,999,440Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a structure comprising a graphene sheet having a first face and a second face, the first face being provided with a plurality of metal pins, the metal pins being separated from one another by a dielectric medium selected from air and dielectric materials, said method comprising: synthesizing, by vapor phase catalytic growth, the graphene sheet on a plurality of metal pins, the metal pins being disposed on a membrane made from a dielectric material or integrated in the membrane, wherein the catalytic growth is catalysed by the metal pins, wherein the metal pins are formed of a metal or a mixture of metals, and the metal (s) having a lattice parameter within about 2% of a lattice parameter of the graphene.
The method of claim 1, wherein the vapor phase catalytic growth comprises chemical vapor deposition.
The method of claim 1, wherein the metal pins form a lattice.
The method of claim 1, further comprising producing the metal pins, wherein producing the metal pins comprises filling openings in a support with a metal or metal alloy.
The method according to claim 1, further comprising removing the membrane. 20.-26.
canceled
The method of claim [[5]] 1, wherein the metal pins are formed of a metal or a mixture of metals selected from the group consisting of nickel, copper, cobalt, ruthenium, palladium, iridium and platinum.
The method of claim 6, wherein the metal pins are formed of nickel.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials4 process steps
Fabrication of a graphene sheet on nickel nanopins integrated in an SiOCH membrane. The process involves: (1) PECVD deposition of SiOCH on a silicon substrate partially coated with 5 nm PVD nickel, followed by electron beam lithography to form a nanoporous SiOCH membrane with ~40 nm diameter pores separated by ~40 nm; (2) electrodeposition of nickel nanowires into the nanopores; (3) LPCVD synthesis of graphene on the nickel nanopins. Optional removal of nickel nanopins by wet etching in 1 M FeCl₃ solution yields a nanoporous SiOCH membrane supporting a graphene sheet.
Layer stacks claimed or described, ordered top of device to substrate.
graphene sheet on metal pins in dielectric membrane
Materials described outside the worked examples.
graphene sheet
C
metal pins (catalyst)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0–6 Pa | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,999,440Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a structure comprising a graphene sheet having a first face and a second face, the first face being provided with a plurality of metal pins, the metal pins being separated from one another by a dielectric medium selected from air and dielectric materials, said method comprising: synthesizing, by vapor phase catalytic growth, the graphene sheet on a plurality of metal pins, the metal pins being disposed on a membrane made from a dielectric material or integrated in the membrane, wherein the catalytic growth is catalysed by the metal pins, wherein the metal pins are formed of a metal or a mixture of metals, and the metal (s) having a lattice parameter within about 2% of a lattice parameter of the graphene.
The method of claim 1, wherein the vapor phase catalytic growth comprises chemical vapor deposition.
The method of claim 1, wherein the metal pins form a lattice.
The method of claim 1, further comprising producing the metal pins, wherein producing the metal pins comprises filling openings in a support with a metal or metal alloy.
The method according to claim 1, further comprising removing the membrane. 20.-26.
canceled
The method of claim [[5]] 1, wherein the metal pins are formed of a metal or a mixture of metals selected from the group consisting of nickel, copper, cobalt, ruthenium, palladium, iridium and platinum.
The method of claim 6, wherein the metal pins are formed of nickel.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials4 process steps
Fabrication of a graphene sheet on nickel nanopins integrated in an SiOCH membrane. The process involves: (1) PECVD deposition of SiOCH on a silicon substrate partially coated with 5 nm PVD nickel, followed by electron beam lithography to form a nanoporous SiOCH membrane with ~40 nm diameter pores separated by ~40 nm; (2) electrodeposition of nickel nanowires into the nanopores; (3) LPCVD synthesis of graphene on the nickel nanopins. Optional removal of nickel nanopins by wet etching in 1 M FeCl₃ solution yields a nanoporous SiOCH membrane supporting a graphene sheet.
Layer stacks claimed or described, ordered top of device to substrate.
graphene sheet on metal pins in dielectric membrane
Materials described outside the worked examples.
graphene sheet
C
metal pins (catalyst)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0–6 Pa | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,999,440Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a structure comprising a graphene sheet having a first face and a second face, the first face being provided with a plurality of metal pins, the metal pins being separated from one another by a dielectric medium selected from air and dielectric materials, said method comprising: synthesizing, by vapor phase catalytic growth, the graphene sheet on a plurality of metal pins, the metal pins being disposed on a membrane made from a dielectric material or integrated in the membrane, wherein the catalytic growth is catalysed by the metal pins, wherein the metal pins are formed of a metal or a mixture of metals, and the metal (s) having a lattice parameter within about 2% of a lattice parameter of the graphene.
The method of claim 1, wherein the vapor phase catalytic growth comprises chemical vapor deposition.
The method of claim 1, wherein the metal pins form a lattice.
The method of claim 1, further comprising producing the metal pins, wherein producing the metal pins comprises filling openings in a support with a metal or metal alloy.
The method according to claim 1, further comprising removing the membrane. 20.-26.
canceled
The method of claim [[5]] 1, wherein the metal pins are formed of a metal or a mixture of metals selected from the group consisting of nickel, copper, cobalt, ruthenium, palladium, iridium and platinum.
The method of claim 6, wherein the metal pins are formed of nickel.
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials4 process steps
Fabrication of a graphene sheet on nickel nanopins integrated in an SiOCH membrane. The process involves: (1) PECVD deposition of SiOCH on a silicon substrate partially coated with 5 nm PVD nickel, followed by electron beam lithography to form a nanoporous SiOCH membrane with ~40 nm diameter pores separated by ~40 nm; (2) electrodeposition of nickel nanowires into the nanopores; (3) LPCVD synthesis of graphene on the nickel nanopins. Optional removal of nickel nanopins by wet etching in 1 M FeCl₃ solution yields a nanoporous SiOCH membrane supporting a graphene sheet.
Layer stacks claimed or described, ordered top of device to substrate.
graphene sheet on metal pins in dielectric membrane
Materials described outside the worked examples.
graphene sheet
C
metal pins (catalyst)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0–6 Pa | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
dielectric membrane
alumina
Al₂O₃
silica
SiO₂
SiOCH/SiOCN-type dielectric
| ≥ 1 nm |
| — |
dielectric membrane
alumina
Al₂O₃
silica
SiO₂
SiOCH/SiOCN-type dielectric
| ≥ 1 nm |
| — |
dielectric membrane
alumina
Al₂O₃
silica
SiO₂
SiOCH/SiOCN-type dielectric
| ≥ 1 nm |
| — |
dielectric membrane
alumina
Al₂O₃
silica
SiO₂
SiOCH/SiOCN-type dielectric
| ≥ 1 nm |
| — |