Patent
US 10,777,406METHOD OF MAKING GRAPHENE AND GRAPHENE DEVICES
Jim Busch
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,777,406Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken at a point 3 p m from a Ni edge. These spectra (and the remainder described herein) are of the material that is located on the insulator layer.
Figure 2 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken 50 p m from a Ni edge.
Figure 3 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken 100 pm from a Ni edge.
Figure 4 shows the Raman spectra from a device that had been heated to 600 ° C. The spectra were taken 5 p m from a Ni edge.
Figure 5 shows the Raman spectra from a device that had been heated to 600 ° C. The spectra were taken 10 p m from a Ni edge.
Figure 6 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken at a Ni edge.
Figure 7 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 50 pm from a Ni edge.
Figure 8 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 100 pm from a Ni edge.
Figure 9 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 200 pm from a Ni edge.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 10.. Canceled
Canceled
A method of growing graphene using a precursor graphene device comprising: the precursor graphene device comprising: an insulator layer, wherein at least a top portion of the insulator layer is an electrical insulator; a metal layer in contact with and covering part of the top of the insulator layer; and a carbon layer in contact with the metal layer and the top of the insulator layer; said method comprising the steps of: (a) depositing the metal layer onto the insulator layer; (b) depositing carbon layer on the metal layer to complete the precursor graphene device; (c) loading the precursor graphene device into a tube furnace along with boats and oxygen free forming gas; and (d) heating the tube furnace to a temperature sufficient to initiate graphene formation; and (e) cooling the precursor graphene device. Previously presented
The method of Claim 11, wherein: the heating is conducted in a substantially oxygen-free atmosphere. Original
The method of Claim 11, wherein: the heating is conducted in the presence of a substantially oxygen-free gas. Original
The method of Claim 11, wherein: the heating is conducted in the presence of a gas, comprising: 95 % Ar/5% H2. Original
The method of Claim 11, wherein: the precursor is heated to a temperature of from 400-1000 0 C. Original
The method of Claim 11, wherein: the heating is conducted in a vacuum. Original
The method of claim 11, further comprising a step of cleaning by reactive ion etching the insulator layer to remove organic substances. Previously presented
The method of claim 11, wherein the precursor graphene device further comprising a passivation layer located between the insulator layer and the metal/carbon layers and in contact with and covering a substantial portion of the top of the insulator layer. Previously presented
The method o f claim 11, wherein the precursor graphene device further comprising a metal adhesive layer located between the metal layer and either the insulator layer or passivation layer. Currently amended
- 22.. Canceled
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials1 process step
A 285 nm SiO₂/Si wafer is cleaved as the insulating layer. The oxide surface is cleaned with acetone and methanol, then reactive ion etched in O₂ to remove organic substances. A 200 nm thick Ni layer is deposited via electron beam evaporation in an electrode pattern. A 10 nm amorphous carbon layer is deposited via filament carbon coater over the metal/oxide layers. The resulting precursor is loaded into a tube furnace with Ti chip boats, pumped down to ~3.5E-2 Torr, backfilled with 95% Ar/5% H₂ forming gas to ~50 mT, and heated to initiate graphene formation, then cooled.
Layer stacks claimed or described, ordered top of device to substrate.
precursor graphene device/graphene device
Materials described outside the worked examples.
passivation layer
metal adhesive layer
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken at a point 3 p m from a Ni edge. These spectra (and the remainder described herein) are of the material that is located on the insulator layer.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 60–18000 s | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,777,406Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken at a point 3 p m from a Ni edge. These spectra (and the remainder described herein) are of the material that is located on the insulator layer.
Figure 2 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken 50 p m from a Ni edge.
Figure 3 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken 100 pm from a Ni edge.
Figure 4 shows the Raman spectra from a device that had been heated to 600 ° C. The spectra were taken 5 p m from a Ni edge.
Figure 5 shows the Raman spectra from a device that had been heated to 600 ° C. The spectra were taken 10 p m from a Ni edge.
Figure 6 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken at a Ni edge.
Figure 7 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 50 pm from a Ni edge.
Figure 8 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 100 pm from a Ni edge.
Figure 9 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 200 pm from a Ni edge.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 10.. Canceled
Canceled
A method of growing graphene using a precursor graphene device comprising: the precursor graphene device comprising: an insulator layer, wherein at least a top portion of the insulator layer is an electrical insulator; a metal layer in contact with and covering part of the top of the insulator layer; and a carbon layer in contact with the metal layer and the top of the insulator layer; said method comprising the steps of: (a) depositing the metal layer onto the insulator layer; (b) depositing carbon layer on the metal layer to complete the precursor graphene device; (c) loading the precursor graphene device into a tube furnace along with boats and oxygen free forming gas; and (d) heating the tube furnace to a temperature sufficient to initiate graphene formation; and (e) cooling the precursor graphene device. Previously presented
The method of Claim 11, wherein: the heating is conducted in a substantially oxygen-free atmosphere. Original
The method of Claim 11, wherein: the heating is conducted in the presence of a substantially oxygen-free gas. Original
The method of Claim 11, wherein: the heating is conducted in the presence of a gas, comprising: 95 % Ar/5% H2. Original
The method of Claim 11, wherein: the precursor is heated to a temperature of from 400-1000 0 C. Original
The method of Claim 11, wherein: the heating is conducted in a vacuum. Original
The method of claim 11, further comprising a step of cleaning by reactive ion etching the insulator layer to remove organic substances. Previously presented
The method of claim 11, wherein the precursor graphene device further comprising a passivation layer located between the insulator layer and the metal/carbon layers and in contact with and covering a substantial portion of the top of the insulator layer. Previously presented
The method o f claim 11, wherein the precursor graphene device further comprising a metal adhesive layer located between the metal layer and either the insulator layer or passivation layer. Currently amended
- 22.. Canceled
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials1 process step
A 285 nm SiO₂/Si wafer is cleaved as the insulating layer. The oxide surface is cleaned with acetone and methanol, then reactive ion etched in O₂ to remove organic substances. A 200 nm thick Ni layer is deposited via electron beam evaporation in an electrode pattern. A 10 nm amorphous carbon layer is deposited via filament carbon coater over the metal/oxide layers. The resulting precursor is loaded into a tube furnace with Ti chip boats, pumped down to ~3.5E-2 Torr, backfilled with 95% Ar/5% H₂ forming gas to ~50 mT, and heated to initiate graphene formation, then cooled.
Layer stacks claimed or described, ordered top of device to substrate.
precursor graphene device/graphene device
Materials described outside the worked examples.
passivation layer
metal adhesive layer
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken at a point 3 p m from a Ni edge. These spectra (and the remainder described herein) are of the material that is located on the insulator layer.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 60–18000 s | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,777,406Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken at a point 3 p m from a Ni edge. These spectra (and the remainder described herein) are of the material that is located on the insulator layer.
Figure 2 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken 50 p m from a Ni edge.
Figure 3 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken 100 pm from a Ni edge.
Figure 4 shows the Raman spectra from a device that had been heated to 600 ° C. The spectra were taken 5 p m from a Ni edge.
Figure 5 shows the Raman spectra from a device that had been heated to 600 ° C. The spectra were taken 10 p m from a Ni edge.
Figure 6 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken at a Ni edge.
Figure 7 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 50 pm from a Ni edge.
Figure 8 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 100 pm from a Ni edge.
Figure 9 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 200 pm from a Ni edge.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 10.. Canceled
Canceled
A method of growing graphene using a precursor graphene device comprising: the precursor graphene device comprising: an insulator layer, wherein at least a top portion of the insulator layer is an electrical insulator; a metal layer in contact with and covering part of the top of the insulator layer; and a carbon layer in contact with the metal layer and the top of the insulator layer; said method comprising the steps of: (a) depositing the metal layer onto the insulator layer; (b) depositing carbon layer on the metal layer to complete the precursor graphene device; (c) loading the precursor graphene device into a tube furnace along with boats and oxygen free forming gas; and (d) heating the tube furnace to a temperature sufficient to initiate graphene formation; and (e) cooling the precursor graphene device. Previously presented
The method of Claim 11, wherein: the heating is conducted in a substantially oxygen-free atmosphere. Original
The method of Claim 11, wherein: the heating is conducted in the presence of a substantially oxygen-free gas. Original
The method of Claim 11, wherein: the heating is conducted in the presence of a gas, comprising: 95 % Ar/5% H2. Original
The method of Claim 11, wherein: the precursor is heated to a temperature of from 400-1000 0 C. Original
The method of Claim 11, wherein: the heating is conducted in a vacuum. Original
The method of claim 11, further comprising a step of cleaning by reactive ion etching the insulator layer to remove organic substances. Previously presented
The method of claim 11, wherein the precursor graphene device further comprising a passivation layer located between the insulator layer and the metal/carbon layers and in contact with and covering a substantial portion of the top of the insulator layer. Previously presented
The method o f claim 11, wherein the precursor graphene device further comprising a metal adhesive layer located between the metal layer and either the insulator layer or passivation layer. Currently amended
- 22.. Canceled
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials1 process step
A 285 nm SiO₂/Si wafer is cleaved as the insulating layer. The oxide surface is cleaned with acetone and methanol, then reactive ion etched in O₂ to remove organic substances. A 200 nm thick Ni layer is deposited via electron beam evaporation in an electrode pattern. A 10 nm amorphous carbon layer is deposited via filament carbon coater over the metal/oxide layers. The resulting precursor is loaded into a tube furnace with Ti chip boats, pumped down to ~3.5E-2 Torr, backfilled with 95% Ar/5% H₂ forming gas to ~50 mT, and heated to initiate graphene formation, then cooled.
Layer stacks claimed or described, ordered top of device to substrate.
precursor graphene device/graphene device
Materials described outside the worked examples.
passivation layer
metal adhesive layer
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken at a point 3 p m from a Ni edge. These spectra (and the remainder described herein) are of the material that is located on the insulator layer.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 60–18000 s | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,777,406Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken at a point 3 p m from a Ni edge. These spectra (and the remainder described herein) are of the material that is located on the insulator layer.
Figure 2 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken 50 p m from a Ni edge.
Figure 3 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken 100 pm from a Ni edge.
Figure 4 shows the Raman spectra from a device that had been heated to 600 ° C. The spectra were taken 5 p m from a Ni edge.
Figure 5 shows the Raman spectra from a device that had been heated to 600 ° C. The spectra were taken 10 p m from a Ni edge.
Figure 6 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken at a Ni edge.
Figure 7 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 50 pm from a Ni edge.
Figure 8 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 100 pm from a Ni edge.
Figure 9 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 200 pm from a Ni edge.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
- 10.. Canceled
Canceled
A method of growing graphene using a precursor graphene device comprising: the precursor graphene device comprising: an insulator layer, wherein at least a top portion of the insulator layer is an electrical insulator; a metal layer in contact with and covering part of the top of the insulator layer; and a carbon layer in contact with the metal layer and the top of the insulator layer; said method comprising the steps of: (a) depositing the metal layer onto the insulator layer; (b) depositing carbon layer on the metal layer to complete the precursor graphene device; (c) loading the precursor graphene device into a tube furnace along with boats and oxygen free forming gas; and (d) heating the tube furnace to a temperature sufficient to initiate graphene formation; and (e) cooling the precursor graphene device. Previously presented
The method of Claim 11, wherein: the heating is conducted in a substantially oxygen-free atmosphere. Original
The method of Claim 11, wherein: the heating is conducted in the presence of a substantially oxygen-free gas. Original
The method of Claim 11, wherein: the heating is conducted in the presence of a gas, comprising: 95 % Ar/5% H2. Original
The method of Claim 11, wherein: the precursor is heated to a temperature of from 400-1000 0 C. Original
The method of Claim 11, wherein: the heating is conducted in a vacuum. Original
The method of claim 11, further comprising a step of cleaning by reactive ion etching the insulator layer to remove organic substances. Previously presented
The method of claim 11, wherein the precursor graphene device further comprising a passivation layer located between the insulator layer and the metal/carbon layers and in contact with and covering a substantial portion of the top of the insulator layer. Previously presented
The method o f claim 11, wherein the precursor graphene device further comprising a metal adhesive layer located between the metal layer and either the insulator layer or passivation layer. Currently amended
- 22.. Canceled
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials1 process step
A 285 nm SiO₂/Si wafer is cleaved as the insulating layer. The oxide surface is cleaned with acetone and methanol, then reactive ion etched in O₂ to remove organic substances. A 200 nm thick Ni layer is deposited via electron beam evaporation in an electrode pattern. A 10 nm amorphous carbon layer is deposited via filament carbon coater over the metal/oxide layers. The resulting precursor is loaded into a tube furnace with Ti chip boats, pumped down to ~3.5E-2 Torr, backfilled with 95% Ar/5% H₂ forming gas to ~50 mT, and heated to initiate graphene formation, then cooled.
Layer stacks claimed or described, ordered top of device to substrate.
precursor graphene device/graphene device
Materials described outside the worked examples.
passivation layer
metal adhesive layer
Measurements and analyses referenced in the patent, with their drawing references.
Figure 1 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken at a point 3 p m from a Ni edge. These spectra (and the remainder described herein) are of the material that is located on the insulator layer.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 60–18000 s | — |
Related documents with shared materials, methods, properties, or citations.
Ni layer
Ni
Ti chips
Ti
Co
Re
Pd
Pt
Cr
Al₂O₃
HfO₂
Ta₂O₅
ZnO
TiO₂
SiO₂
Figure 2 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken 50 p m from a Ni edge.
Figure 3 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken 100 pm from a Ni edge.
Figure 4 shows the Raman spectra from a device that had been heated to 600 ° C. The spectra were taken 5 p m from a Ni edge.
Figure 5 shows the Raman spectra from a device that had been heated to 600 ° C. The spectra were taken 10 p m from a Ni edge.
Figure 6 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken at a Ni edge.
Figure 7 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 50 pm from a Ni edge.
Figure 8 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 100 pm from a Ni edge.
Figure 9 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 200 pm from a Ni edge.
Ni layer
Ni
Ti chips
Ti
Co
Re
Pd
Pt
Cr
Al₂O₃
HfO₂
Ta₂O₅
ZnO
TiO₂
SiO₂
Figure 2 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken 50 p m from a Ni edge.
Figure 3 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken 100 pm from a Ni edge.
Figure 4 shows the Raman spectra from a device that had been heated to 600 ° C. The spectra were taken 5 p m from a Ni edge.
Figure 5 shows the Raman spectra from a device that had been heated to 600 ° C. The spectra were taken 10 p m from a Ni edge.
Figure 6 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken at a Ni edge.
Figure 7 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 50 pm from a Ni edge.
Figure 8 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 100 pm from a Ni edge.
Figure 9 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 200 pm from a Ni edge.
Ni layer
Ni
Ti chips
Ti
Co
Re
Pd
Pt
Cr
Al₂O₃
HfO₂
Ta₂O₅
ZnO
TiO₂
SiO₂
Figure 2 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken 50 p m from a Ni edge.
Figure 3 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken 100 pm from a Ni edge.
Figure 4 shows the Raman spectra from a device that had been heated to 600 ° C. The spectra were taken 5 p m from a Ni edge.
Figure 5 shows the Raman spectra from a device that had been heated to 600 ° C. The spectra were taken 10 p m from a Ni edge.
Figure 6 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken at a Ni edge.
Figure 7 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 50 pm from a Ni edge.
Figure 8 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 100 pm from a Ni edge.
Figure 9 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 200 pm from a Ni edge.
Ni layer
Ni
Ti chips
Ti
Co
Re
Pd
Pt
Cr
Al₂O₃
HfO₂
Ta₂O₅
ZnO
TiO₂
SiO₂
Figure 2 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken 50 p m from a Ni edge.
Figure 3 shows the Raman spectra from a device that had been heated to 800 ° C. The spectra were taken 100 pm from a Ni edge.
Figure 4 shows the Raman spectra from a device that had been heated to 600 ° C. The spectra were taken 5 p m from a Ni edge.
Figure 5 shows the Raman spectra from a device that had been heated to 600 ° C. The spectra were taken 10 p m from a Ni edge.
Figure 6 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken at a Ni edge.
Figure 7 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 50 pm from a Ni edge.
Figure 8 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 100 pm from a Ni edge.
Figure 9 shows the Raman spectra from a device that had been heated to 700 ° C. The spectra were taken 200 pm from a Ni edge.