Patent
US 8,926,852METHOD FOR TRANSFERRING GRAPHENE LAYER
Chun-wei CHEN
US
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Patent
Atlas literature
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US 8,926,852Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart of a method according to a first embodiment of the present invention for transferring a graphene layer; [0027]
FIG. 2 is a flow chart of a method according to a second embodiment of the present invention for transferring the graphene layer; [0028]
FIG. 3e is a schematic view of a fifth flow of an embodiment of a method for transferring the graphene layer in accordance with the first embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transfe rr ing a graphene layer, the method comprising steps of: providing a substrate; providing a graphene layer, and the graphene layer being formed on a metal carrier layer; providing an electrostatic g eneratin g workbench, and disposing the substrate onto the electrostatic g eneratin g workbench; applying an electric field e u to a -s-wf aee -ef- the substrate by the electrostatic g eneratin g workbench, so that a the- surface of the substrate hav e-h as electrostatic charges; electrostatically adsorbing the graphene layer formed on the metal carrier layer onto the substrate by the electrostatic charges; and immersing the substrate having the graphene layer formed on the metal carrier layer into an etching solution to remove the metal carrier layer, while the graphene layer being retained on the substrate.
The method of claim 1, wherein the electrostatic charges are negative electrostatic charges.
The method of claim 1, wherein the electrostatic charges are positive electrostatic charges.
The method of claim 1, wherein a voltage of the electrostatic charges is greater than or equal to 50 volts.
The method of claim 1, wherein the substrate is a flexible substrate, a glass substrate, a plastic substrate, a silicon wafer or a silicon wafer having silicon oxide thereon. 2
The method of claim 1, wherein a material of the metal ca rr ier layer is selected from copper, nickel, cobalt, ruthenium, iridium, rhenium, platinum, palladium, or any combination thereof.
The method of claim 1, further comprising: forming a protection layer onto the graphene layer. original
canceled
canceled
canceled
Materials described outside the worked examples.
graphene layer
metal carrier layer
Additional fabrication and treatment steps described in the patent.
Patent
Atlas literature
Patent
US 8,926,852Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart of a method according to a first embodiment of the present invention for transferring a graphene layer; [0027]
FIG. 2 is a flow chart of a method according to a second embodiment of the present invention for transferring the graphene layer; [0028]
FIG. 3e is a schematic view of a fifth flow of an embodiment of a method for transferring the graphene layer in accordance with the first embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transfe rr ing a graphene layer, the method comprising steps of: providing a substrate; providing a graphene layer, and the graphene layer being formed on a metal carrier layer; providing an electrostatic g eneratin g workbench, and disposing the substrate onto the electrostatic g eneratin g workbench; applying an electric field e u to a -s-wf aee -ef- the substrate by the electrostatic g eneratin g workbench, so that a the- surface of the substrate hav e-h as electrostatic charges; electrostatically adsorbing the graphene layer formed on the metal carrier layer onto the substrate by the electrostatic charges; and immersing the substrate having the graphene layer formed on the metal carrier layer into an etching solution to remove the metal carrier layer, while the graphene layer being retained on the substrate.
The method of claim 1, wherein the electrostatic charges are negative electrostatic charges.
The method of claim 1, wherein the electrostatic charges are positive electrostatic charges.
The method of claim 1, wherein a voltage of the electrostatic charges is greater than or equal to 50 volts.
The method of claim 1, wherein the substrate is a flexible substrate, a glass substrate, a plastic substrate, a silicon wafer or a silicon wafer having silicon oxide thereon. 2
The method of claim 1, wherein a material of the metal ca rr ier layer is selected from copper, nickel, cobalt, ruthenium, iridium, rhenium, platinum, palladium, or any combination thereof.
The method of claim 1, further comprising: forming a protection layer onto the graphene layer. original
canceled
canceled
canceled
Materials described outside the worked examples.
graphene layer
metal carrier layer
Additional fabrication and treatment steps described in the patent.
Patent
Atlas literature
Patent
US 8,926,852Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart of a method according to a first embodiment of the present invention for transferring a graphene layer; [0027]
FIG. 2 is a flow chart of a method according to a second embodiment of the present invention for transferring the graphene layer; [0028]
FIG. 3e is a schematic view of a fifth flow of an embodiment of a method for transferring the graphene layer in accordance with the first embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transfe rr ing a graphene layer, the method comprising steps of: providing a substrate; providing a graphene layer, and the graphene layer being formed on a metal carrier layer; providing an electrostatic g eneratin g workbench, and disposing the substrate onto the electrostatic g eneratin g workbench; applying an electric field e u to a -s-wf aee -ef- the substrate by the electrostatic g eneratin g workbench, so that a the- surface of the substrate hav e-h as electrostatic charges; electrostatically adsorbing the graphene layer formed on the metal carrier layer onto the substrate by the electrostatic charges; and immersing the substrate having the graphene layer formed on the metal carrier layer into an etching solution to remove the metal carrier layer, while the graphene layer being retained on the substrate.
The method of claim 1, wherein the electrostatic charges are negative electrostatic charges.
The method of claim 1, wherein the electrostatic charges are positive electrostatic charges.
The method of claim 1, wherein a voltage of the electrostatic charges is greater than or equal to 50 volts.
The method of claim 1, wherein the substrate is a flexible substrate, a glass substrate, a plastic substrate, a silicon wafer or a silicon wafer having silicon oxide thereon. 2
The method of claim 1, wherein a material of the metal ca rr ier layer is selected from copper, nickel, cobalt, ruthenium, iridium, rhenium, platinum, palladium, or any combination thereof.
The method of claim 1, further comprising: forming a protection layer onto the graphene layer. original
canceled
canceled
canceled
Materials described outside the worked examples.
graphene layer
metal carrier layer
Additional fabrication and treatment steps described in the patent.
Patent
Atlas literature
Patent
US 8,926,852Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flow chart of a method according to a first embodiment of the present invention for transferring a graphene layer; [0027]
FIG. 2 is a flow chart of a method according to a second embodiment of the present invention for transferring the graphene layer; [0028]
FIG. 3e is a schematic view of a fifth flow of an embodiment of a method for transferring the graphene layer in accordance with the first embodiment of the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transfe rr ing a graphene layer, the method comprising steps of: providing a substrate; providing a graphene layer, and the graphene layer being formed on a metal carrier layer; providing an electrostatic g eneratin g workbench, and disposing the substrate onto the electrostatic g eneratin g workbench; applying an electric field e u to a -s-wf aee -ef- the substrate by the electrostatic g eneratin g workbench, so that a the- surface of the substrate hav e-h as electrostatic charges; electrostatically adsorbing the graphene layer formed on the metal carrier layer onto the substrate by the electrostatic charges; and immersing the substrate having the graphene layer formed on the metal carrier layer into an etching solution to remove the metal carrier layer, while the graphene layer being retained on the substrate.
The method of claim 1, wherein the electrostatic charges are negative electrostatic charges.
The method of claim 1, wherein the electrostatic charges are positive electrostatic charges.
The method of claim 1, wherein a voltage of the electrostatic charges is greater than or equal to 50 volts.
The method of claim 1, wherein the substrate is a flexible substrate, a glass substrate, a plastic substrate, a silicon wafer or a silicon wafer having silicon oxide thereon. 2
The method of claim 1, wherein a material of the metal ca rr ier layer is selected from copper, nickel, cobalt, ruthenium, iridium, rhenium, platinum, palladium, or any combination thereof.
The method of claim 1, further comprising: forming a protection layer onto the graphene layer. original
canceled
canceled
canceled
Materials described outside the worked examples.
graphene layer
metal carrier layer
Additional fabrication and treatment steps described in the patent.
copper, nickel, cobalt, ruthenium, iridium, rhenium, platinum, palladium, or any combination thereof
substrate
etching solution
copper, nickel, cobalt, ruthenium, iridium, rhenium, platinum, palladium, or any combination thereof
substrate
etching solution
copper, nickel, cobalt, ruthenium, iridium, rhenium, platinum, palladium, or any combination thereof
substrate
etching solution
copper, nickel, cobalt, ruthenium, iridium, rhenium, platinum, palladium, or any combination thereof
substrate
etching solution